SG11201407087XA - Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate - Google Patents

Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate

Info

Publication number
SG11201407087XA
SG11201407087XA SG11201407087XA SG11201407087XA SG11201407087XA SG 11201407087X A SG11201407087X A SG 11201407087XA SG 11201407087X A SG11201407087X A SG 11201407087XA SG 11201407087X A SG11201407087X A SG 11201407087XA SG 11201407087X A SG11201407087X A SG 11201407087XA
Authority
SG
Singapore
Prior art keywords
lllll
polishing
substrate
llll
ibaraki
Prior art date
Application number
SG11201407087XA
Inventor
Tomohiro Iwano
Hisataka Minami
Toshiaki Akutsu
Koji Fujisaki
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11201407087XA publication Critical patent/SG11201407087XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Abstract

(i2) mwu ft iz s-5 iv x m £ titz s issaj n d9) mm IHMMi _ r4T» allium 2013^11 £ 28 0(28.11.2013) W j\"^| PCT (10) WO 2013/175854 A1 (51) H01L 21/304 (2006.01) B24B 37/00 (2012.01) (21) (22) (25) g|@ttii0>Wi§: (26) HI®4>§f]CDl r=E. I DP • C09K 3/14 (2006.01) PCT/JP2013/058770 2013 ^ 3 M 26 0(26.03.2013) 0*lg (30) fiBfefix — £: 2012-116865 2012 ^5^ 22 0(22.05.2012) JP (71) tiJSIA: 0lIlbJ$^^£tt(HITACHI CHEMICAL COMPANY, LTD.) [JP/JP]; T 1006606 — Tl 9§2-^ Tokyo (JP). (72) S:;¥(I\VAN() Tomohiro); T3178555 0ilrfiKBTEaT@ 1 1 3# ^ 0 b it £ Ibaraki (JP). M Ck ft (MINAMI Hisataka); T 3178555 0 llrfi KB7E3 T @ 1 3# 1 0 lI'fbfiK111^3 Ibaraki (JP). P5J#. ;t ?IJ0J(AKUTSU Toshiaki); T3178555 18 |0 iimKBTEaTg 1 3f1 0jt<bJ$tt3C^a 1*1 Ibaraki (JP). H llgf M W] (FUJISAKI Koji); T 1858601 — Tl 2 8 0 #±fe #a^tt0a»M 1*1 Tokyo (JP). (74) ftSA: 5? fit, ^(HASEGAWAYoshikiet al.); T 1000005 Kifvlft^FftEEl I*&CD fa —T @ 1 # 1-^*LO>fa MY PLAZA If; I/) (JP). 9® tJHSISftS'FfcWfcffi Tokyo (8i) (^ro&i^PBy. IS ^ pj f I): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, [&£%] (54) Title: SLURRY, POLISHING-SOLUTION SET, POLISHING SOLUTION, SUBSTRATE POLISHING METHOD, AND SUBSTRATE (54)fg0jco:g^ : 'J — „ EJF!l;$-t? V V , ffigljflu [HI] PVA o o o o. •t 00 i> i-H cn i-H o CJ O ° °o~Cbo°0 0 o o o o (57) Abstract: A polishing solution containing abrasive grains, an additive, and water. Said abrasive grains contain a hydroxide of a tetravalent metal, and an aqueous dispersion containing said abrasive grains in the amount of 1.0 mass% exhibits an absorbance of at least 1.00 but less than 1.50 with respect to light having a wavelength of 400 nm. (57)®$: , mm*. a O, 1 • 0H*%lcS6Lf=7k#tfejfclcfc^Ts®:S4 0 0 nm©3fclcttLT®3f£Jt1 • ooJsLti. 5 o*iS£-5-*3ta>-efc*K WSJfco WO 2013/175854 Al I lllll llllllll II llllll III lllll lllll III III III lllll lllll llll lllll lllll lllll llll lllllll llll llll SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) J!£ll (^TFCO&l^gy , 11^ oI#£): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), 3.— V 7 (AM, AZ, BY, KG, KZ, RU, TJ, TM), 3 — • V / ^ (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). - (&&£ 21 &(3))
SG11201407087XA 2012-05-22 2013-03-26 Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate SG11201407087XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012116865 2012-05-22
PCT/JP2013/058770 WO2013175854A1 (en) 2012-05-22 2013-03-26 Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate

Publications (1)

Publication Number Publication Date
SG11201407087XA true SG11201407087XA (en) 2014-12-30

Family

ID=49623558

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201407087XA SG11201407087XA (en) 2012-05-22 2013-03-26 Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate

Country Status (7)

Country Link
US (1) US10549399B2 (en)
JP (1) JP5943072B2 (en)
KR (1) KR102034328B1 (en)
CN (1) CN104321854B (en)
SG (1) SG11201407087XA (en)
TW (1) TWI576419B (en)
WO (1) WO2013175854A1 (en)

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KR20130129400A (en) 2010-11-22 2013-11-28 히타치가세이가부시끼가이샤 Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
SG190054A1 (en) 2010-11-22 2013-06-28 Hitachi Chemical Co Ltd Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
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WO2013175856A1 (en) 2012-05-22 2013-11-28 日立化成株式会社 Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
CN104321854B (en) 2012-05-22 2017-06-20 日立化成株式会社 Suspension, lapping liquid set agent, lapping liquid, the Ginding process and matrix of matrix
US9346978B2 (en) 2012-05-22 2016-05-24 Hitachi Chemical Company, Ltd. Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
US10557059B2 (en) 2012-05-22 2020-02-11 Hitachi Chemical Company, Ltd. Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
WO2015030009A1 (en) 2013-08-30 2015-03-05 日立化成株式会社 Slurry, polishing solution set, polishing solution, substrate polishing method, and substrate
US10752807B2 (en) 2013-09-10 2020-08-25 Hitachi Chemical Company, Ltd Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate

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US10549399B2 (en) 2020-02-04
CN104321854A (en) 2015-01-28
JPWO2013175854A1 (en) 2016-01-12
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WO2013175854A1 (en) 2013-11-28

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