SG11201804672QA - Systems and methods for production of low oxygen content silicon - Google Patents

Systems and methods for production of low oxygen content silicon

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Publication number
SG11201804672QA
SG11201804672QA SG11201804672QA SG11201804672QA SG11201804672QA SG 11201804672Q A SG11201804672Q A SG 11201804672QA SG 11201804672Q A SG11201804672Q A SG 11201804672QA SG 11201804672Q A SG11201804672Q A SG 11201804672QA SG 11201804672Q A SG11201804672Q A SG 11201804672QA
Authority
SG
Singapore
Prior art keywords
international
missouri
peters
silicon
pearl drive
Prior art date
Application number
SG11201804672QA
Inventor
Gaurab Samanta
Parthiv Daggolu
Sumeet Bhagavat
Soubir Basak
Nan Zhang
Original Assignee
Globalwafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalwafers Co Ltd filed Critical Globalwafers Co Ltd
Publication of SG11201804672QA publication Critical patent/SG11201804672QA/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -' Organization International Bureau irestYlid (43) International Publication Date ..... ..sr ,„,„.1 8 June 2017 (08.06.2017) W I P0 1 PCT (10) WO International 111111111111311111111111111111111111111111111111111111111111111111111111111111111111111111 2017/096057 Publication Number Al (51) International Patent Classification: (74) Agents: MUNSELL, C30B 15/20 (2006.01) C30B 15/30 (2006.01) dale LLP, 7700 C30B 29/06 (2006.01) souri 63105 (US). (21) International Application Number: (81) Designated States PCT/US2016/064448 kind of national AO, AT, AU, (22) International Filing Date: BZ, CA, CH, 1 December 2016 (01.12.2016) DO, DZ, EC, (25) Filing Language: English HN, HR, HU, KW, KZ, LA, (26) Publication Language: English MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, (30) Priority Data: OM, PA, PE, 62/263,355 4 December 2015 (04.12.2015) US SC, SD, SE, TN, TR, TT, (71) Applicant: SUNEDISON SEMICONDUCTOR LIM- ZW. ITED [SG/SG]; 9 Battery Road #15-01, Straits Trading Building, Singapore 049910 (SG). (84) Designated States kind of regional (72) Inventor; and GM, KE, LR, (71) Applicant (for US only): SAMANTA, Gaurab [US/US]; TZ, UG, ZM, 501 Pearl Drive, St. Peters, Missouri 63376 (US). TJ, TM), European DK, EE, ES, Michael G. et al.; Armstrong Teas- Forsyth Blvd., Suite 1800, St. Louis, Mis- (unless otherwise indicated, for every protection available): AE, AG, AL, AM, AZ, BA, BB, BG, BH, BN, BR, BW, BY, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, LC, LK, LR, LS, LU, LY, MA, MD, ME, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, (unless otherwise indicated, for every protection available): ARIPO (BW, GH, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (AL, AT, BE, BG, CH, CY, CZ, DE, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, (72) Inventors: DAGGOLU, Parthiv; 501 Pearl Drive, St. LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, Peters, Missouri 63376 (US). BHAGAVAT, Sumeet; 501 SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, Pearl Drive, St. Peters, Missouri 63376 (US). BASAK, GW, KM, ML, Soubir; 501 Pearl Drive, St. Peters, Missouri 63376 (US). MR, NE, SN, TD, TG). ZHANG, Nan; 501 Pearl Drive, St. Peters, Missouri Published: 63376 (US). — with international search report (Art 21(3)) (54) Title: SYSTEMS AND METHODS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON 100 KOOLINa - 38, WATER 14 3 1 12t -129 0 01 0 27 UNIT ; 41 POWER 144 13 § Suv PLY 273 31-, 1 25 ii 7 36 1, 27 gg g ICC:IDLING WATER € , 5 0 Ii31 - .4t EAT LING WATER RETURN 105 POWER i r-; E 137 - \ 0 SUPPLY -15.1 i SUPPLY Ih- .;-107 in C 01 FIG. 0 Ir --- (57) : A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon 1-1 C in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in ei at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a Q second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or in- creasing a magnetic field strength relative to the first stage.
SG11201804672QA 2015-12-04 2016-12-01 Systems and methods for production of low oxygen content silicon SG11201804672QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562263355P 2015-12-04 2015-12-04
PCT/US2016/064448 WO2017096057A1 (en) 2015-12-04 2016-12-01 Systems and methods for production of low oxygen content silicon

Publications (1)

Publication Number Publication Date
SG11201804672QA true SG11201804672QA (en) 2018-07-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201804672QA SG11201804672QA (en) 2015-12-04 2016-12-01 Systems and methods for production of low oxygen content silicon

Country Status (8)

Country Link
US (4) US10745823B2 (en)
EP (2) EP3384072B1 (en)
JP (3) JP6987057B2 (en)
KR (1) KR102455419B1 (en)
CN (1) CN109154103A (en)
SG (1) SG11201804672QA (en)
TW (1) TWI737656B (en)
WO (1) WO2017096057A1 (en)

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CN109154103A (en) * 2015-12-04 2019-01-04 环球晶圆股份有限公司 For producing the system and method for low oxygen content silicon
JP6642410B2 (en) * 2016-12-20 2020-02-05 株式会社Sumco Method for producing silicon single crystal
SG11202103547UA (en) * 2018-10-12 2021-05-28 Globalwafers Co Ltd Dopant concentration control in silicon melt to enhance the ingot quality
CN113825862A (en) * 2019-04-11 2021-12-21 环球晶圆股份有限公司 Process for preparing ingot with reduced deformation of main body length of rear section
US11414778B2 (en) * 2019-07-29 2022-08-16 Globalwafers Co., Ltd. Production and use of dynamic state charts when growing a single crystal silicon ingot
US11885036B2 (en) 2019-08-09 2024-01-30 Leading Edge Equipment Technologies, Inc. Producing a ribbon or wafer with regions of low oxygen concentration
US11873574B2 (en) 2019-12-13 2024-01-16 Globalwafers Co., Ltd. Systems and methods for production of silicon using a horizontal magnetic field
CN114318499B (en) * 2020-09-29 2023-07-11 万华化学集团电子材料有限公司 Growth method of large-diameter semiconductor silicon single crystal and single crystal furnace
JP2024515991A (en) * 2021-04-28 2024-04-11 グローバルウェーハズ カンパニー リミテッド Manufacturing method of silicon ingot by horizontal magnetic field Czochralski method
CN113789567B (en) * 2021-09-17 2022-11-25 安徽光智科技有限公司 Large-size germanium single crystal growth method
CN114855263A (en) * 2022-04-01 2022-08-05 上海新昇半导体科技有限公司 Crystal growth method and growth device
CN117127252A (en) * 2022-05-20 2023-11-28 隆基绿能科技股份有限公司 Oxygen content control method, device, electronic equipment and storage medium
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Also Published As

Publication number Publication date
KR102455419B1 (en) 2022-10-17
KR20220143159A (en) 2022-10-24
US10745823B2 (en) 2020-08-18
TW201723244A (en) 2017-07-01
US11668020B2 (en) 2023-06-06
JP2022033854A (en) 2022-03-02
JP2018535917A (en) 2018-12-06
CN109154103A (en) 2019-01-04
US20180355509A1 (en) 2018-12-13
EP3831987A1 (en) 2021-06-09
WO2017096057A1 (en) 2017-06-08
US20230250551A1 (en) 2023-08-10
US20210348298A1 (en) 2021-11-11
TWI737656B (en) 2021-09-01
US11136691B2 (en) 2021-10-05
EP3384072A1 (en) 2018-10-10
JP2023052405A (en) 2023-04-11
US20200392643A1 (en) 2020-12-17
EP3384072B1 (en) 2021-02-17
KR20180101358A (en) 2018-09-12
JP6987057B2 (en) 2021-12-22

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