SG11202103547UA - Dopant concentration control in silicon melt to enhance the ingot quality - Google Patents

Dopant concentration control in silicon melt to enhance the ingot quality

Info

Publication number
SG11202103547UA
SG11202103547UA SG11202103547UA SG11202103547UA SG11202103547UA SG 11202103547U A SG11202103547U A SG 11202103547UA SG 11202103547U A SG11202103547U A SG 11202103547UA SG 11202103547U A SG11202103547U A SG 11202103547UA SG 11202103547U A SG11202103547U A SG 11202103547UA
Authority
SG
Singapore
Prior art keywords
enhance
dopant concentration
silicon melt
concentration control
ingot quality
Prior art date
Application number
SG11202103547UA
Inventor
Maria Porrini
Original Assignee
Globalwafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalwafers Co Ltd filed Critical Globalwafers Co Ltd
Publication of SG11202103547UA publication Critical patent/SG11202103547UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
SG11202103547UA 2018-10-12 2019-09-09 Dopant concentration control in silicon melt to enhance the ingot quality SG11202103547UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862744672P 2018-10-12 2018-10-12
PCT/US2019/050140 WO2020076448A1 (en) 2018-10-12 2019-09-09 Dopant concentration control in silicon melt to enhance the ingot quality

Publications (1)

Publication Number Publication Date
SG11202103547UA true SG11202103547UA (en) 2021-05-28

Family

ID=68051926

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202103547UA SG11202103547UA (en) 2018-10-12 2019-09-09 Dopant concentration control in silicon melt to enhance the ingot quality

Country Status (8)

Country Link
US (1) US11085128B2 (en)
EP (1) EP3864197B1 (en)
JP (1) JP2022504609A (en)
KR (1) KR102514915B1 (en)
CN (1) CN113272479A (en)
SG (1) SG11202103547UA (en)
TW (1) TWI796517B (en)
WO (1) WO2020076448A1 (en)

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WO2003021011A1 (en) * 2001-08-29 2003-03-13 Memc Electronic Materials, Inc. Process for eliminating neck dislocations during czochralski crystal growth
US7132091B2 (en) * 2001-09-28 2006-11-07 Memc Electronic Materials, Inc. Single crystal silicon ingot having a high arsenic concentration
JP4764007B2 (en) * 2002-11-12 2011-08-31 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Method for producing single crystal silicon by controlling temperature gradient using crucible rotation
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
JP2008088045A (en) * 2006-09-05 2008-04-17 Sumco Corp Manufacture process of silicon single crystal and manufacture process of silicon wafer
JP5176101B2 (en) * 2007-04-24 2013-04-03 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Silicon single crystal manufacturing method and apparatus, and silicon single crystal ingot
JP5003283B2 (en) * 2007-05-23 2012-08-15 信越半導体株式会社 Pulling method of silicon single crystal
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US9074298B2 (en) * 2008-08-18 2015-07-07 Sumco Techxiv Corporation Processes for production of silicon ingot, silicon wafer and epitaxial wafer, and silicon ingot
US8535439B2 (en) * 2009-01-14 2013-09-17 Sumco Techxiv Corporation Manufacturing method for silicon single crystal
JP2010202414A (en) * 2009-02-27 2010-09-16 Sumco Corp Method for growing silicon single crystal and method for producing silicon wafer
JP5399212B2 (en) * 2009-11-16 2014-01-29 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Method for producing silicon single crystal
KR101841032B1 (en) 2010-09-03 2018-03-22 지티에이티 아이피 홀딩 엘엘씨 Silicon single crystal doped with gallium, indium, or aluminum
US8512470B2 (en) * 2011-04-08 2013-08-20 China Crystal Technologies Co. Ltd System and methods for growing high-resistance single crystals
MY173316A (en) 2011-04-14 2020-01-15 Gtat Ip Holding Llc Silicon ingot having uniform multiple dopants and method and apparats for producing same
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CN102560646B (en) * 2012-03-20 2015-05-20 浙江大学 N-type casting monocrystalline silicon with uniform doping resistivity and preparation method thereof
JP5831436B2 (en) * 2012-12-11 2015-12-09 信越半導体株式会社 Method for producing silicon single crystal
JP2016503964A (en) 2012-12-31 2016-02-08 エムイーエムシー・エレクトロニック・マテリアルズ・ソシエタ・ペル・アチオニＭＥＭＣ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ， ＳｐＡ Indium-doped silicon wafer and solar cell using the same
JP6015634B2 (en) * 2013-11-22 2016-10-26 信越半導体株式会社 Method for producing silicon single crystal
JP6222013B2 (en) 2014-08-29 2017-11-01 信越半導体株式会社 Resistivity control method
JP5892232B1 (en) * 2014-12-24 2016-03-23 株式会社Sumco Single crystal manufacturing method and silicon wafer manufacturing method
KR101680215B1 (en) * 2015-01-07 2016-11-28 주식회사 엘지실트론 Method for manufacturing silicone single crystal ingot and silicone single crystal ingot manufactured by the method
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Also Published As

Publication number Publication date
JP2022504609A (en) 2022-01-13
KR102514915B1 (en) 2023-03-27
US11085128B2 (en) 2021-08-10
EP3864197B1 (en) 2022-08-03
TW202328513A (en) 2023-07-16
US20200115818A1 (en) 2020-04-16
WO2020076448A1 (en) 2020-04-16
EP3864197A1 (en) 2021-08-18
TW202014566A (en) 2020-04-16
CN113272479A (en) 2021-08-17
KR20210072771A (en) 2021-06-17
TWI796517B (en) 2023-03-21

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