KR100395201B1 - 불휘발성 반도체 기억 장치 및 그 제조 방법 - Google Patents

불휘발성 반도체 기억 장치 및 그 제조 방법 Download PDF

Info

Publication number
KR100395201B1
KR100395201B1 KR10-2000-0074920A KR20000074920A KR100395201B1 KR 100395201 B1 KR100395201 B1 KR 100395201B1 KR 20000074920 A KR20000074920 A KR 20000074920A KR 100395201 B1 KR100395201 B1 KR 100395201B1
Authority
KR
South Korea
Prior art keywords
gate
insulating film
film
electrode material
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2000-0074920A
Other languages
English (en)
Korean (ko)
Other versions
KR20010062298A (ko
Inventor
이구찌다다시
히메노요시아끼
쯔노다히로아끼
Original Assignee
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20010062298A publication Critical patent/KR20010062298A/ko
Application granted granted Critical
Publication of KR100395201B1 publication Critical patent/KR100395201B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR10-2000-0074920A 1999-12-09 2000-12-09 불휘발성 반도체 기억 장치 및 그 제조 방법 Expired - Fee Related KR100395201B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1999-350841 1999-12-09
JP35084199A JP2001168306A (ja) 1999-12-09 1999-12-09 不揮発性半導体記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR20010062298A KR20010062298A (ko) 2001-07-07
KR100395201B1 true KR100395201B1 (ko) 2003-08-21

Family

ID=18413258

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0074920A Expired - Fee Related KR100395201B1 (ko) 1999-12-09 2000-12-09 불휘발성 반도체 기억 장치 및 그 제조 방법

Country Status (5)

Country Link
US (6) US6720610B2 (enExample)
JP (1) JP2001168306A (enExample)
KR (1) KR100395201B1 (enExample)
CN (2) CN100423273C (enExample)
TW (1) TW475251B (enExample)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080079059A1 (en) * 1991-04-24 2008-04-03 Eon Silicon Solution Inc. Method of manufacturing a nonvolatile semiconductor memory device and select gate device having a stacked gate structure
JP2001168306A (ja) * 1999-12-09 2001-06-22 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2002246485A (ja) * 2001-02-13 2002-08-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
US6563733B2 (en) * 2001-05-24 2003-05-13 Winbond Electronics Corporation Memory array architectures based on a triple-polysilicon source-side injection non-volatile memory cell
JP2002359308A (ja) 2001-06-01 2002-12-13 Toshiba Corp 半導体記憶装置及びその製造方法
US6762092B2 (en) 2001-08-08 2004-07-13 Sandisk Corporation Scalable self-aligned dual floating gate memory cell array and methods of forming the array
KR100462175B1 (ko) * 2002-02-08 2004-12-16 삼성전자주식회사 부유게이트를 갖는 비휘발성 메모리 소자의 셀 및 그제조방법
US6894930B2 (en) 2002-06-19 2005-05-17 Sandisk Corporation Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
WO2004001852A1 (en) * 2002-06-19 2003-12-31 Sandisk Corporation Deep wordline trench to shield cross coupling between adjacent cells for scaled nand
KR100454135B1 (ko) * 2002-10-10 2004-10-26 삼성전자주식회사 비휘발성 기억소자의 형성방법
KR100454136B1 (ko) * 2002-10-23 2004-10-26 삼성전자주식회사 플로팅 게이트의 전하 손실을 막을 수 있는 비휘발성메모리 장치 및 그 제조방법
US6815266B2 (en) * 2002-12-30 2004-11-09 Bae Systems Information And Electronic Systems Integration, Inc. Method for manufacturing sidewall contacts for a chalcogenide memory device
CN1745473B (zh) * 2003-01-30 2010-04-14 因芬尼昂技术股份公司 统一信道程序闪存位线制造方法
TWI220316B (en) * 2003-05-22 2004-08-11 Powerchip Semiconductor Corp Flash memory cell, flash memory cell array and manufacturing method thereof
JP3936315B2 (ja) * 2003-07-04 2007-06-27 株式会社東芝 半導体記憶装置及びその製造方法
JP4237561B2 (ja) 2003-07-04 2009-03-11 株式会社東芝 半導体記憶装置及びその製造方法
JP4005000B2 (ja) 2003-07-04 2007-11-07 株式会社東芝 半導体記憶装置及びデータ書き込み方法。
JP2005026589A (ja) 2003-07-04 2005-01-27 Toshiba Corp 半導体記憶装置及びその製造方法
JP2005079165A (ja) 2003-08-28 2005-03-24 Toshiba Corp 不揮発性半導体記憶装置とその製造方法、電子カードおよび電子装置
JP2005085996A (ja) 2003-09-09 2005-03-31 Toshiba Corp 半導体装置及びその製造方法
KR100541554B1 (ko) * 2003-12-09 2006-01-12 삼성전자주식회사 플래쉬 메모리 소자의 제조방법 및 그에 의해 제조된플래쉬 메모리 소자
KR100521444B1 (ko) * 2003-10-23 2005-10-12 동부아남반도체 주식회사 임베디드 비휘발성 메모리 및 그 제조방법
JP3966850B2 (ja) * 2003-11-20 2007-08-29 株式会社東芝 半導体装置およびその製造方法
JP4377676B2 (ja) * 2003-12-24 2009-12-02 株式会社東芝 半導体装置およびその製造方法
US7755095B2 (en) * 2003-12-24 2010-07-13 Panasonic Corporation Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device
JP2005332885A (ja) 2004-05-18 2005-12-02 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US6972230B1 (en) * 2004-06-10 2005-12-06 Macronix International Co., Ltd. Method for fabricating a floating gate memory device
TWI246166B (en) * 2004-07-08 2005-12-21 Powerchip Semiconductor Corp Flash memory cell and fabricating method thereof
KR100590220B1 (ko) * 2004-08-04 2006-06-19 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
US7276414B2 (en) * 2004-08-18 2007-10-02 Micron Technology, Inc. NAND memory arrays and methods
US7306552B2 (en) * 2004-12-03 2007-12-11 Samsung Electronics Co., Ltd. Semiconductor device having load resistor and method of fabricating the same
US8384148B2 (en) * 2004-12-22 2013-02-26 Micron Technology, Inc. Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling
KR100647001B1 (ko) * 2005-03-09 2006-11-23 주식회사 하이닉스반도체 플래쉬 메모리 소자의 플로팅 게이트 전극 형성방법
KR100689203B1 (ko) * 2005-04-22 2007-03-08 경북대학교 산학협력단 플래시 메모리 소자
US7679129B1 (en) * 2005-05-13 2010-03-16 Spansion Llc System and method for improving oxide-nitride-oxide (ONO) coupling in a semiconductor device
KR100685621B1 (ko) * 2005-06-30 2007-02-22 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조방법
KR100625142B1 (ko) 2005-07-05 2006-09-15 삼성전자주식회사 반도체 장치의 제조 방법
US20070023815A1 (en) * 2005-07-27 2007-02-01 Dong-Yean Oh Non-volatile memory device and associated method of manufacture
KR100717280B1 (ko) * 2005-08-22 2007-05-15 삼성전자주식회사 반도체 기억 장치의 셀 어레이 및 그 형성 방법
EP1786036A1 (en) * 2005-11-11 2007-05-16 STMicroelectronics S.r.l. Floating gate non-volatile memory cell and process for manufacturing
JP4476919B2 (ja) 2005-12-01 2010-06-09 株式会社東芝 不揮発性記憶装置
KR100649308B1 (ko) * 2005-12-20 2006-11-24 동부일렉트로닉스 주식회사 자기 정렬 플로팅 게이트 어레이 형성 방법 및 자기 정렬플로팅 게이트 어레이를 포함하는 플래시 메모리 소자
KR100650857B1 (ko) * 2005-12-23 2006-11-28 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조 방법
JP4921848B2 (ja) * 2006-05-09 2012-04-25 株式会社東芝 半導体装置およびその製造方法
KR101432766B1 (ko) 2006-05-26 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작방법
JP2008016777A (ja) * 2006-07-10 2008-01-24 Toshiba Corp 半導体装置およびその製造方法
US7678648B2 (en) 2006-07-14 2010-03-16 Micron Technology, Inc. Subresolution silicon features and methods for forming the same
US7709307B2 (en) * 2006-08-24 2010-05-04 Kovio, Inc. Printed non-volatile memory
KR100852236B1 (ko) * 2006-09-05 2008-08-13 삼성전자주식회사 이이피롬 장치 및 그 제조 방법
KR100856165B1 (ko) * 2006-09-29 2008-09-03 주식회사 하이닉스반도체 플래시 메모리 소자의 제조 방법
KR100757335B1 (ko) * 2006-10-18 2007-09-11 삼성전자주식회사 불휘발성 메모리 장치 및 이를 제조하는 방법
KR100773354B1 (ko) * 2006-10-31 2007-11-05 삼성전자주식회사 플래쉬 메모리 소자 및 그 제조방법
US8642441B1 (en) * 2006-12-15 2014-02-04 Spansion Llc Self-aligned STI with single poly for manufacturing a flash memory device
KR100847388B1 (ko) * 2007-02-22 2008-07-18 주식회사 하이닉스반도체 반도체 메모리 소자 및 그의 제조 방법
US7745285B2 (en) 2007-03-30 2010-06-29 Sandisk Corporation Methods of forming and operating NAND memory with side-tunneling
JP2008270351A (ja) 2007-04-17 2008-11-06 Toshiba Corp 不揮発性半導体記憶装置
DE102007041206B4 (de) * 2007-08-31 2015-12-17 Advanced Micro Devices, Inc. Halbleiterbauelement und Verfahren zum selbstjustierten Entfernen eines high-k Gatedielektrikums über einem STI-Gebiet
JP4843586B2 (ja) * 2007-10-01 2011-12-21 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
WO2009045964A1 (en) * 2007-10-01 2009-04-09 Applied Materials, Inc. Low temperature conformal oxide formation and applications
KR101416318B1 (ko) * 2008-01-15 2014-07-09 삼성전자주식회사 소자 분리 공정을 포함하는 반도체 장치의 제조방법
US8138077B2 (en) 2008-05-13 2012-03-20 Hynix Semiconductor Inc. Flash memory device and method of fabricating the same
JP2010004020A (ja) * 2008-05-19 2010-01-07 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP2010123890A (ja) 2008-11-21 2010-06-03 Toshiba Corp 不揮発性半導体メモリ
US20110127632A1 (en) * 2009-12-01 2011-06-02 Macronix International Co., Ltd. Semiconductor memory devices and methods of manufacturing the same
TWI481014B (zh) * 2009-12-11 2015-04-11 Macronix Int Co Ltd 半導體記憶元件及其製造方法
US8551858B2 (en) * 2010-02-03 2013-10-08 Spansion Llc Self-aligned SI rich nitride charge trap layer isolation for charge trap flash memory
US8686492B2 (en) * 2010-03-11 2014-04-01 Spansion Llc Non-volatile FINFET memory device and manufacturing method thereof
KR101736246B1 (ko) 2010-09-14 2017-05-17 삼성전자주식회사 비휘발성 메모리 소자 및 이의 제조방법
JP2012199313A (ja) * 2011-03-18 2012-10-18 Toshiba Corp 不揮発性半導体記憶装置
JP2011135107A (ja) * 2011-04-04 2011-07-07 Toshiba Corp 半導体装置
US8692353B2 (en) * 2011-09-02 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method
US8877614B2 (en) 2011-10-13 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer for semiconductor structure contact
ES2934670T3 (es) 2013-01-24 2023-02-23 Cardiovalve Ltd Válvulas protésicas ancladas de forma ventricular
US9786752B2 (en) * 2013-03-19 2017-10-10 Rohm Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20160181435A1 (en) * 2014-12-22 2016-06-23 Wafertech, Llc Floating gate transistors and method for forming the same
US10703328B2 (en) * 2017-12-01 2020-07-07 Ford Global Technologies, Llc Seatbelt guide assembly
CN110838491B (zh) * 2018-08-15 2022-05-10 无锡华润上华科技有限公司 半导体结构及其制造方法
CN113517296B (zh) * 2020-04-10 2025-02-07 合肥晶合集成电路股份有限公司 一种非易失性存储器结构及其制备方法
TWI896920B (zh) * 2022-12-09 2025-09-11 華邦電子股份有限公司 半導體結構及其形成方法
TWI852393B (zh) * 2023-03-10 2024-08-11 華邦電子股份有限公司 半導體裝置及其形成方法
WO2025155328A1 (en) * 2024-01-17 2025-07-24 Silicon Storage Technology, Inc. Non-volatile memory cell with ono compound insulation layer between floating and control gates and a method of fabrication

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864697A (ja) * 1994-08-23 1996-03-08 Nippon Steel Corp 不揮発性半導体記憶装置の製造方法
JPH1154633A (ja) * 1997-07-29 1999-02-26 Mitsubishi Electric Corp 不揮発性半導体記憶装置
KR19990018367A (ko) * 1997-08-27 1999-03-15 윤종용 불휘발성 메모리 장치 및 그 제조방법
JPH11163304A (ja) * 1997-11-28 1999-06-18 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486769A (en) * 1979-01-24 1984-12-04 Xicor, Inc. Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
US4314265A (en) * 1979-01-24 1982-02-02 Xicor, Inc. Dense nonvolatile electrically-alterable memory devices with four layer electrodes
JPS5636143A (en) * 1979-08-31 1981-04-09 Hitachi Ltd Manufacture of semiconductor device
US4892840A (en) * 1986-03-27 1990-01-09 Texas Instruments Incorporated EPROM with increased floating gate/control gate coupling
US5156990A (en) * 1986-07-23 1992-10-20 Texas Instruments Incorporated Floating-gate memory cell with tailored doping profile
US5017980A (en) * 1988-07-15 1991-05-21 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory cell
US5420060A (en) * 1988-11-14 1995-05-30 Texas Instruments Incorporated Method of making contract-free floating-gate memory array with silicided buried bitlines and with single-step defined floating gates
JPH088313B2 (ja) * 1989-07-25 1996-01-29 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JPH0399473A (ja) 1989-09-12 1991-04-24 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US5051795A (en) * 1989-11-21 1991-09-24 Texas Instruments Incorporated EEPROM with trench-isolated bitlines
JP2870086B2 (ja) 1990-01-25 1999-03-10 日本電気株式会社 Ｍｏｓ型不揮発性半導体記憶装置の製造方法
US5091327A (en) * 1990-06-28 1992-02-25 National Semiconductor Corporation Fabrication of a high density stacked gate eprom split cell with bit line reach-through and interruption immunity
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
EP1032034A1 (en) * 1992-01-22 2000-08-30 Macronix International Co., Ltd. Method of making memory device
JPH05218440A (ja) 1992-01-30 1993-08-27 Nec Corp 不揮発性半導体記憶装置の製造方法
US5510638A (en) * 1992-11-02 1996-04-23 Nvx Corporation Field shield isolated EPROM
JP3222234B2 (ja) 1992-12-18 2001-10-22 株式会社リコー 半導体装置の製造方法
JP3323607B2 (ja) 1993-11-12 2002-09-09 株式会社日立製作所 半導体記憶装置の製造方法
US5475251A (en) * 1994-05-31 1995-12-12 National Semiconductor Corporation Secure non-volatile memory cell
JP3445660B2 (ja) * 1994-07-08 2003-09-08 新日本製鐵株式会社 不揮発性半導体記憶装置及びその製造方法
JP3469362B2 (ja) * 1994-08-31 2003-11-25 株式会社東芝 半導体記憶装置
US6291851B1 (en) * 1995-07-21 2001-09-18 Rohm Co., Ltd. Semiconductor device having oxide layers formed with different thicknesses
JP3598197B2 (ja) * 1997-03-19 2004-12-08 株式会社ルネサステクノロジ 半導体装置
US6190966B1 (en) * 1997-03-25 2001-02-20 Vantis Corporation Process for fabricating semiconductor memory device with high data retention including silicon nitride etch stop layer formed at high temperature with low hydrogen ion concentration
US6342715B1 (en) * 1997-06-27 2002-01-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JP3602691B2 (ja) 1997-06-27 2004-12-15 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
TW322608B (en) * 1997-07-31 1997-12-11 United Microelectronics Corp Manufacturing method of self-aligned salicide
JPH1187543A (ja) * 1997-09-10 1999-03-30 Toshiba Corp 不揮発性半導体記憶装置
US5851881A (en) * 1997-10-06 1998-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making monos flash memory for multi-level logic
JP3149937B2 (ja) * 1997-12-08 2001-03-26 日本電気株式会社 半導体装置およびその製造方法
JP3867378B2 (ja) 1997-12-09 2007-01-10 ソニー株式会社 半導体不揮発性記憶装置の製造方法
US6034394A (en) * 1997-12-18 2000-03-07 Advanced Micro Devices, Inc. Methods and arrangements for forming a floating gate in non-volatile memory semiconductor devices
US5972749A (en) * 1998-01-05 1999-10-26 Advanced Micro Devices, Inc. Method for preventing P1 punchthrough
US6373095B1 (en) * 1998-02-25 2002-04-16 International Business Machines Corporation NVRAM cell having increased coupling ratio between a control gate and floating gate without an increase in cell area
JPH11317464A (ja) 1998-03-02 1999-11-16 Sony Corp 電気的書き換えが可能なメモリ素子及びその製造方法
US6215145B1 (en) * 1998-04-06 2001-04-10 Micron Technology, Inc. Dense SOI flash memory array structure
US6635530B2 (en) * 1998-04-07 2003-10-21 Micron Technology, Inc. Methods of forming gated semiconductor assemblies
KR100280107B1 (ko) * 1998-05-07 2001-03-02 윤종용 트렌치 격리 형성 방법
US6034395A (en) * 1998-06-05 2000-03-07 Advanced Micro Devices, Inc. Semiconductor device having a reduced height floating gate
JP2000012709A (ja) 1998-06-18 2000-01-14 Toshiba Corp 不揮発性半導体メモリ及びその製造方法
KR100314708B1 (ko) * 1998-07-03 2002-04-24 윤종용 이피롬셀이내장된반도체소자의제조방법
EP0975022A1 (en) * 1998-07-22 2000-01-26 STMicroelectronics S.r.l. Method for manufacturing electronic devices comprising non-volatile memory cells and LV transistors, with salicided junctions
JP4237344B2 (ja) * 1998-09-29 2009-03-11 株式会社東芝 半導体装置及びその製造方法
EP0996162A1 (en) * 1998-10-21 2000-04-26 STMicroelectronics S.r.l. Low resistance contact structure for a select transistor of EEPROM memory cells
KR100318683B1 (ko) * 1998-12-17 2001-12-28 윤종용 산화막/질화막/산화막 유전층의 형성방법
US6190986B1 (en) 1999-01-04 2001-02-20 International Business Machines Corporation Method of producing sulithographic fuses using a phase shift mask
TW409415B (en) * 1999-01-18 2000-10-21 United Microelectronics Corp Flash memory structure and the manufacture method thereof
TW405265B (en) * 1999-01-30 2000-09-11 United Microelectronics Corp Flash memory structure and its manufacture method
US6228713B1 (en) * 1999-06-28 2001-05-08 Chartered Semiconductor Manufacturing Ltd. Self-aligned floating gate for memory application using shallow trench isolation
US6096604A (en) * 1999-08-04 2000-08-01 Chartered Semiconductor Manufacturing Ltd Production of reversed flash memory device
US6369416B1 (en) * 1999-09-23 2002-04-09 Advanced Micro Devices, Inc. Semiconductor device with contacts having a sloped profile
JP2001168306A (ja) * 1999-12-09 2001-06-22 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US6255689B1 (en) * 1999-12-20 2001-07-03 United Microelectronics Corp. Flash memory structure and method of manufacture
JP2001230390A (ja) * 2000-02-17 2001-08-24 Mitsubishi Electric Corp 半導体不揮発性記憶装置およびその製造法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864697A (ja) * 1994-08-23 1996-03-08 Nippon Steel Corp 不揮発性半導体記憶装置の製造方法
JPH1154633A (ja) * 1997-07-29 1999-02-26 Mitsubishi Electric Corp 不揮発性半導体記憶装置
KR19990018367A (ko) * 1997-08-27 1999-03-15 윤종용 불휘발성 메모리 장치 및 그 제조방법
JPH11163304A (ja) * 1997-11-28 1999-06-18 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
US20010014503A1 (en) 2001-08-16
KR20010062298A (ko) 2001-07-07
US7382015B2 (en) 2008-06-03
TW475251B (en) 2002-02-01
US20050167732A1 (en) 2005-08-04
US7488646B2 (en) 2009-02-10
US20070166919A1 (en) 2007-07-19
CN100423273C (zh) 2008-10-01
US6974746B2 (en) 2005-12-13
US7582928B2 (en) 2009-09-01
US20050233522A1 (en) 2005-10-20
CN1302087A (zh) 2001-07-04
JP2001168306A (ja) 2001-06-22
US6987047B2 (en) 2006-01-17
US20070278562A1 (en) 2007-12-06
US6720610B2 (en) 2004-04-13
CN1722447A (zh) 2006-01-18
US20040108538A1 (en) 2004-06-10

Similar Documents

Publication Publication Date Title
KR100395201B1 (ko) 불휘발성 반도체 기억 장치 및 그 제조 방법
KR100542512B1 (ko) 반도체 장치 및 그 제조 방법
KR100635424B1 (ko) 불휘발성 반도체 기억 장치 및 그 제조 방법
US6998673B2 (en) Semiconductor device and method of manufacturing the same
KR100414507B1 (ko) 반도체 장치 및 그 제조 방법
US7939423B2 (en) Method for manufacturing nonvolatile semiconductor memory device structure
JP2010087159A (ja) 不揮発性半導体記憶装置およびその製造方法
KR100914810B1 (ko) 반도체 장치 및 그 제조 방법
JP2008091614A (ja) 半導体装置およびその製造方法
JP4823248B2 (ja) 不揮発性半導体記憶装置及びその製造方法
JP2004006433A (ja) 半導体記憶装置及びその製造方法
US20060220103A1 (en) Semiconductor device and method of manufacturing the same
US20100075492A1 (en) Nonvolatile semiconductor memory and method of fabrication thereof
JP4843586B2 (ja) 不揮発性半導体記憶装置及びその製造方法
JP2005294518A (ja) 半導体装置およびその製造方法
JP2010080602A (ja) 半導体装置およびその製造方法
JP2001168215A (ja) 不揮発性半導体記憶装置及びその製造方法
US7495308B2 (en) Semiconductor device with trench isolation
JP2010034291A (ja) 不揮発性半導体記憶装置の製造方法
JP2008130819A (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

Fee payment year number: 1

St.27 status event code: A-2-2-U10-U11-oth-PR1002

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

Fee payment year number: 4

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 5

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 6

St.27 status event code: A-4-4-U10-U11-oth-PR1001

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

Fee payment year number: 7

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 8

St.27 status event code: A-4-4-U10-U11-oth-PR1001

FPAY Annual fee payment

Payment date: 20110630

Year of fee payment: 9

PR1001 Payment of annual fee

Fee payment year number: 9

St.27 status event code: A-4-4-U10-U11-oth-PR1001

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

Not in force date: 20120807

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

St.27 status event code: A-4-4-U10-U13-oth-PC1903

PC1903 Unpaid annual fee

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20120807

St.27 status event code: N-4-6-H10-H13-oth-PC1903

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18 Changes to party contact information recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000