JPH09501017A - 半導体ウェーハを流体中で処理する方法および装置 - Google Patents
半導体ウェーハを流体中で処理する方法および装置Info
- Publication number
- JPH09501017A JPH09501017A JP7504711A JP50471195A JPH09501017A JP H09501017 A JPH09501017 A JP H09501017A JP 7504711 A JP7504711 A JP 7504711A JP 50471195 A JP50471195 A JP 50471195A JP H09501017 A JPH09501017 A JP H09501017A
- Authority
- JP
- Japan
- Prior art keywords
- tank
- wafer
- gas
- deionized water
- ozone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 235000012431 wafers Nutrition 0.000 title claims abstract description 145
- 238000000034 method Methods 0.000 title claims abstract description 74
- 239000012530 fluid Substances 0.000 title claims abstract description 62
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000012545 processing Methods 0.000 title claims description 49
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 84
- 239000007789 gas Substances 0.000 claims abstract description 79
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000008367 deionised water Substances 0.000 claims abstract description 47
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 47
- 239000011368 organic material Substances 0.000 claims abstract description 30
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims description 37
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 239000002131 composite material Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 9
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 9
- -1 polytetrafluoroethylene Polymers 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 238000007664 blowing Methods 0.000 claims description 2
- 239000005416 organic matter Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 11
- 238000011065 in-situ storage Methods 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 33
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 2
- 229920001774 Perfluoroether Polymers 0.000 description 2
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 231100000481 chemical toxicant Toxicity 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 102200110702 rs60261494 Human genes 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 239000003440 toxic substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/005—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Treatment Of Water By Oxidation Or Reduction (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.有機物質を半導体ウェーハから除去するにあたり、ウェーハを、オゾンおよ び水の溶液と、約1〜約15℃の温度で接触させることを特徴とする、有機物質 を半導体ウェーハから除去する方法。 2.有機物質がフォトレジストであることを特徴とする請求の範囲1記載の方法 。 3.温度が約5〜約9℃であることを特徴とする請求の範囲1記載の方法。 4.有機物質を半導体ウェーハから除去するにあたり: 半導体ウェーハを、脱イオン水を含むタンク中に配置し; オゾンを脱イオン水中に、ウェーハからの有機物質を不溶性ガスに酸化する のに十分な時間拡散させ; 脱イオン水を、約1〜約15℃の温度に維持し;および ウェーハを脱イオン水ですすぐ ことを特徴とする、有機物質を半導体ウェーハから除去する方法。 5.さらに,不溶性ガスをタンクから排気することを特徴とする請求の範囲4記 載の方法。 6.オゾンを,タンク中の各ウェーハの表面を通して均一に拡散させることを特 徴とする請求の範囲4記載の方法。 7.さらに、脱イオン水ですすいだ後、ウェーハを、約65〜約85℃の温度に 加熱した脱イオン水ですすぐことを特徴とする請求の範囲4記載の方法。 8.オゾンを脱イオン水中に、約1〜約15分間拡散させることを特徴とする請 求の範囲4記載の方法。 9.ウェーハを、約1〜約5分間すすぐことを特徴とする請求の範囲8記載の方 法。 10.有機物質がフォトレジストであることを特徴とする請求の範囲4記載の方法 。 11.脱イオン水が、約5〜約9℃の温度であることを特徴とする請求の範囲4記 載の方法。 12.有機物質を半導体ウェーハから除去するにあたり: 半導体ウェーハを、脱イオン水を含むタンク中に配置し; オゾンを脱イオン水中に拡散させ; オゾンの拡散と同時に、オゾンを脱イオン水中に吸収させ,吹き込む際に、 オゾンを紫外線に露光して、酸素遊離基および酸素分子を形成し、これが有機物 質を不溶性ガスに酸化し; 脱イオン水を、約1〜約15℃の温度に維持し;および ウェーハを脱イオン水ですすぐ ことを特徴とする、有機物質を半導体ウェーハから除去する方法。 13.有機物質がフォトレジストであることを特徴とする請求の範囲12記載の方 法。 14.不溶性ガスをタンクから排気することを特徴とする請求の範囲12記載の方 法。 15.半導体ウェーハを流体で処理するための、複数の側面および底部を有するタ ンクにおいて: 流体をタンク中に供給するための、タンクに接続された手段; 少なくとも1つのウェーハをタンク内に、流体と接触させて支持する手段; ガスをタンク中に注入するための、タンクに接続された手段;および ガスをタンク中に拡散させて、ガスが流体中に吸収され、タンク中に配置さ れた各ウェーハの表面に接触するようにした手段を備え、 前記拡散用の手段は、透過性部材および不透過性部材を有する複合エレメン トを備え、前記透過性部材は、上部および下部を有し、透過性部材の中心部にオ ープンスペースを画成する手段並びに透過性部材の外周とオープンスペースを形 成する手段との間の透過性部材の上部上に位置する溝を形成する手段を備え、前 記不透過性部材は、不透過性部材の中心部にオープンスペースを画成する手段を 有し、これは、透過性部材の中心部にオープンスペースを画成する手段に対応し 、透過性部材および不透過性部材が、溝が、透過性部材の上部において開いてお り、不透過性部材により覆われるように接合されており、複合エレメントが、タ ンクの底部に接続された透過性部材の下部に位置する ことを特徴とする、半導体ウェーハを流体で処理するためのタンク。 16.透過性部材と不透過性部材との両方が、ポリテトラフルオロエチレンとペル フルオロアルコキシビニルエーテルとの混合物を含むことを特徴とする請求の範 囲15記載のタンク。 17.タンクが、第1側および第2側を有し,タンクの第1側は、タンクの上部に おいて鉛直部を有し、タンクの底部において内方へ先細の部分を有し、先細部は 鉛直部より長く、タンクの第2側はタンクの上部において鉛直部を有し、タンク の底部において内方へ先細の部分を有し、先細部は鉛直部より短いことを特徴と する請求の範囲15記載のタンク。 18.さらに、メガソニック トランスデューサーが、タンクの第1側の内方へ先 細の部分上に配置されていることを特徴とする請求の範囲17記載のタンク。 19.さらに、紫外線源が、ガスを拡散させる手段の上方のタンクの内側に配置さ れていることを特徴とする請求の範囲18記載のタンク。 20.ガスを注入する手段が、ガスを拡散させる手段の下に配置されて、ガスが、 拡散用手段中に上方に注入されるようにしたことを特徴とする請求の範囲19記 載のタンク。 21.流体をタンク中に供給するための手段が、流体流を、第1の方向に提供し、 ガスをタンク中に注入する手段が、ガスを第2の方向に、流体流に対して向流と なるように提供することを特徴とする請求の範囲20記載のタンク。 22.ガスをタンク中に注入する手段が、ガスを、個別に、または1種以上の異な るガスと組み合わせて提供することを特徴とする請求の範囲15記載のタンク。 23.半導体ウェーハの流体処理用タンクにおいて用いるガスディフューザーにお いて: 透過性部材および不透過性部材を有する複合エレメントを備え、 前記透過性部材は,上部および下部、透過性部材の中心部にオープンスペー スを画成する手段、並びに透過性部材の外周とオープンスペースを画成する手段 との間の透過性部材の上部上に位置する溝を画成する手段を有し、 前記不透過性部材は、不透過性部材の中心部にオープンスペースを画成する 手段を有し、これは、透過性部材の中心部にオープンスペースを画成する手段に 対応し、透過性部材および不透過性部材が、溝が、透過性部材の上部上で開いて おり、不透過性部材により覆われるように接合されており、複合エレメントが、 タンクの底部に接続された透過性部材の下部に位置する ことを特徴とするガスディフューザー。 24.透過性部材と不透過性部材との両方が、ポリテトラフルオロエチレンとペル フルオロアルコキシビニルエーテルとの混合物を含むことを特徴とする請求の範 囲23記載のガスディフューザー。
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US08/092,523 US5464480A (en) | 1993-07-16 | 1993-07-16 | Process and apparatus for the treatment of semiconductor wafers in a fluid |
US08/092,523 | 1993-07-16 | ||
PCT/US1994/007898 WO1995002895A1 (en) | 1993-07-16 | 1994-07-15 | Process and apparatus for the treatment of semiconductor wafers in a fluid |
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JP2004201021A Division JP2005136377A (ja) | 1993-07-16 | 2004-07-07 | 半導体ウェーハを流体中で処理する方法および装置 |
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JPH09501017A true JPH09501017A (ja) | 1997-01-28 |
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JP50471195A Expired - Fee Related JP4054374B2 (ja) | 1993-07-16 | 1994-07-15 | 半導体ウェーハを流体中で処理する方法 |
JP2004201021A Pending JP2005136377A (ja) | 1993-07-16 | 2004-07-07 | 半導体ウェーハを流体中で処理する方法および装置 |
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JP (2) | JP4054374B2 (ja) |
KR (1) | KR100365529B1 (ja) |
CN (1) | CN1079580C (ja) |
AT (1) | ATE313855T1 (ja) |
AU (3) | AU7332994A (ja) |
CA (1) | CA2167283A1 (ja) |
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US5082518A (en) * | 1990-10-29 | 1992-01-21 | Submicron Systems, Inc. | Sparger plate for ozone gas diffusion |
JPH04199620A (ja) * | 1990-11-29 | 1992-07-20 | Seiko Epson Corp | 半導体基板の湿式処理法及びその装置 |
US5261966A (en) * | 1991-01-28 | 1993-11-16 | Kabushiki Kaisha Toshiba | Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns |
JPH04348029A (ja) * | 1991-05-25 | 1992-12-03 | Toshiba Corp | 半導体基板処理方法及びその処理装置 |
JP3109871B2 (ja) * | 1991-10-21 | 2000-11-20 | 関東電化工業株式会社 | 物品の水切り・乾燥方法及び装置 |
US5186841A (en) * | 1991-11-05 | 1993-02-16 | Praxair Technology Inc. | Cooling water ozonation system |
US5201958A (en) * | 1991-11-12 | 1993-04-13 | Electronic Controls Design, Inc. | Closed-loop dual-cycle printed circuit board cleaning apparatus and method |
JPH05152268A (ja) * | 1991-12-02 | 1993-06-18 | Mitsubishi Electric Corp | レジスト残渣物の除去方法 |
JPH05166776A (ja) * | 1991-12-13 | 1993-07-02 | Nippon Steel Corp | 半導体ウェーハの洗浄方法およびその装置 |
US5279316A (en) * | 1992-08-18 | 1994-01-18 | P.C.T. Systems, Inc. | Multiprocessing sonic bath system for semiconductor wafers |
-
1993
- 1993-07-16 US US08/092,523 patent/US5464480A/en not_active Expired - Lifetime
- 1993-10-07 TW TW085212488U patent/TW301465U/zh unknown
-
1994
- 1994-07-15 DE DE69434583T patent/DE69434583T2/de not_active Expired - Fee Related
- 1994-07-15 AU AU73329/94A patent/AU7332994A/en not_active Abandoned
- 1994-07-15 CN CN94192794A patent/CN1079580C/zh not_active Expired - Fee Related
- 1994-07-15 JP JP50471195A patent/JP4054374B2/ja not_active Expired - Fee Related
- 1994-07-15 CA CA002167283A patent/CA2167283A1/en not_active Abandoned
- 1994-07-15 EP EP94923476A patent/EP0708981B1/en not_active Expired - Lifetime
- 1994-07-15 WO PCT/US1994/007898 patent/WO1995002895A1/en active IP Right Grant
- 1994-07-15 KR KR1019960700195A patent/KR100365529B1/ko not_active IP Right Cessation
- 1994-07-15 AT AT94923476T patent/ATE313855T1/de not_active IP Right Cessation
-
1995
- 1995-07-26 US US08/507,193 patent/US5776296A/en not_active Expired - Fee Related
-
1996
- 1996-07-02 US US08/674,712 patent/US5727578A/en not_active Expired - Fee Related
-
1998
- 1998-08-07 AU AU78875/98A patent/AU699567B2/en not_active Ceased
- 1998-10-26 AU AU89499/98A patent/AU707359B2/en not_active Ceased
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2004
- 2004-07-07 JP JP2004201021A patent/JP2005136377A/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000058496A (ja) * | 1998-08-10 | 2000-02-25 | Oki Electric Ind Co Ltd | 半導体ウエハのオゾン水洗浄システム |
JP2001079376A (ja) * | 1999-09-10 | 2001-03-27 | Kurita Water Ind Ltd | ガス溶解水の調製方法 |
US7329312B2 (en) | 2002-05-16 | 2008-02-12 | Kurita Water Industries, Ltd. | Apparatus for supplying water containing dissolved gas |
JP2004031972A (ja) * | 2003-07-08 | 2004-01-29 | Oki Electric Ind Co Ltd | 半導体ウエハのオゾン水洗浄方法 |
KR101272818B1 (ko) * | 2008-09-15 | 2013-06-10 | 게부르. 쉬미트 게엠베하 | 기판 처리 방법, 기판 및 상기 방법을 수행하기 위한 처리 장치 |
JP2018129363A (ja) * | 2017-02-07 | 2018-08-16 | 栗田工業株式会社 | 半導体基板の洗浄装置及び半導体基板の洗浄方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2005136377A (ja) | 2005-05-26 |
DE69434583T2 (de) | 2006-07-20 |
JP4054374B2 (ja) | 2008-02-27 |
US5727578A (en) | 1998-03-17 |
WO1995002895A1 (en) | 1995-01-26 |
DE69434583D1 (de) | 2006-01-26 |
KR100365529B1 (ko) | 2003-03-06 |
AU7887598A (en) | 1998-10-01 |
CA2167283A1 (en) | 1995-01-26 |
EP0708981B1 (en) | 2005-12-21 |
TW301465U (en) | 1997-03-21 |
KR960704348A (ko) | 1996-08-31 |
EP0708981A4 (en) | 1997-03-12 |
AU699567B2 (en) | 1998-12-10 |
AU7332994A (en) | 1995-02-13 |
AU707359B2 (en) | 1999-07-08 |
ATE313855T1 (de) | 2006-01-15 |
CN1079580C (zh) | 2002-02-20 |
CN1127569A (zh) | 1996-07-24 |
US5464480A (en) | 1995-11-07 |
EP0708981A1 (en) | 1996-05-01 |
US5776296A (en) | 1998-07-07 |
AU8949998A (en) | 1999-01-14 |
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