JP7437814B2 - 化学蒸気および化学ガスの混合物を用いて集積回路基板を湿式処理する方法および装置 - Google Patents
化学蒸気および化学ガスの混合物を用いて集積回路基板を湿式処理する方法および装置 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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Description
Claims (9)
- ナノスケールトレンチを有する基板を湿式化学処理する方法であって、
前記基板をプロセスチャンバ内に配置することと、
対応する液体化学物質の沸点を超える温度の化学蒸気と、高温化学ガスとの混合物で前記基板を処理することと、を含み、
前記プロセスチャンバは、上側セクションと、中間セクションと、下側セクションとを備え、
前記上側セクションは、湿式処理中に前記中間セクションにシールされ、
前記下側セクションは、湿式処理中に前記中間セクションにシールされ、
少なくとも1つの磁気浮上回転ロッドが、前記プロセスチャンバの前記下側セクションに配置され、
前記上側セクションと少なくとも1つの蒸気入口弁とが接続され、前記蒸気入口弁は、加圧された蒸気混合物が前記プロセスチャンバに入ることを可能にし、前記蒸気混合物は、加熱温度が対応する液体化学物質の沸点を超える温度の化学蒸気と、加熱温度が対応する液体化学物質の沸点近くの温度の高温化学ガスとを混合して成る、方法。 - 前記対応する液体化学物質の沸点を超える温度の化学蒸気と高温化学ガスとの混合物を生成することは、
液体化学物質をその沸点を超えて加熱して前記対応する液体化学物質の沸点を超える温度の化学蒸気を生成することと、
化学ガスを対応する液体化学物質の沸点近くに加熱して前記高温化学ガスを生成することと、
前記対応する液体化学物質の沸点を超える温度の化学蒸気と前記高温化学ガスとを混合することと、を含む、請求項1に記載の方法。 - 前記対応する液体化学物質の沸点を超える温度の化学蒸気と前記高温化学ガスとの混合物は、順次、前記プロセスチャンバ内に運ばれ、凝縮されて前記基板のナノスケールトレンチ表面上に所望の新鮮な湿式化学生成薄膜を形成する、請求項1に記載の方法。
- 前記中間セクションは、時計回りおよび反時計回りの両方に90度回転が可能である、請求項1に記載の方法。
- 少なくとも1つのメガソニックトランスデューサが、前記基板の径方向に沿って前記中間セクションの外面に取り付けられる、請求項1に記載の方法。
- 前記少なくとも1つのメガソニックトランスデューサが、調整可能な調和周波数で変調され、異なる波で変調され、異なる電力で変調されるエネルギーを放出する、
請求項5に記載の方法。 - 前記プロセスチャンバに入る前に、前記対応する液体化学物質の沸点を超える温度の化学蒸気と高温化学ガスとを混合すること、および、前記混合した蒸気とガスとをネブライザに通すこと、をさらに備え、
前記ネブライザは、ベンチュリ効果に基づいて設計される、請求項1に記載の方法。 - 基板を湿式化学処理するためのシステムであって、
前記システムは、プロセスチャンバを備え、
前記プロセスチャンバは、
中間セクションと、
前記中間セクションに取り外し可能にシールされる上側セクションと、
前記中間セクションに取り外し可能にシールされる下側セクションと、
前記プロセスチャンバの前記下側セクションに配置される少なくとも1つの磁気浮上回転ロッドと、
少なくとも1つの基板を保持するように設計された基板保持溝と、
前記基板の径方向に沿って前記中間セクションに取り付けられる少なくとも1つのメガソニックトランスデューサと、
前記上側セクションに接続される少なくとも1つの蒸気入口弁であって、加圧された蒸気混合物が前記プロセスチャンバに入ることを可能にする蒸気入口弁と、
前記少なくとも1つの蒸気入口弁に操作可能に取り付けられるネブライザであって、化学ガスと化学蒸気とを混合して噴霧して前記加圧された蒸気混合物を生成するように設計された前記ネブライザと、を備え、
前記蒸気混合物は、加熱温度が対応する液体化学物質の沸点を超える温度の化学蒸気と、加熱温度が対応する液体化学物質の沸点近くの温度の高温化学ガスとを混合して成る、システム。 - 対応する液体化学物質の沸点を超える温度の化学蒸気と高温化学ガスとの混合物を使用する湿式処理およびナノスケールトレンチを有する集積回路(IC)基板のための方法であって、前記方法は、
前記基板を、上側セクション、中間セクション及び下側セクションを有するプロセスチャンバ内へ取り付けることであって、前記中間セクションは、基板の取り付け及び取り外しのため、時計回り及び半時計回りの両方に90度回転可能であり少なくとも1つの磁気浮上回転ロッドが、前記プロセスチャンバの前記下側セクションに配置され、前記上側セクションと少なくとも1つの蒸気入口弁とが接続され、前記蒸気入口弁は、加圧された蒸気混合物が前記プロセスチャンバに入ることを可能にし、前記蒸気混合物は、加熱温度が対応する液体化学物質の沸点を超える温度の化学蒸気と、加熱温度が対応する液体化学物質の沸点近くの温度の高温化学ガスとを混合して成り、
前記プロセスチャンバをシールすることであって、前記プロセスチャンバの上側セクションと中間セクションとを密封接続し、且つ前記下側セクションと中間セクションとを密封接続し、
前記プロセスチャンバを高温の窒素ガスでコンディショニングすること、
対応する液体化学物質の沸点を超える温度の化学蒸気と高温化学ガスとの混合物を順次前記プロセスチャンバ内へ注入することであって、前記混合物がナノスケール粒子を含み、垂直に配置された前記基板上のナノスケールトレンチ構造の表面に入り、凝縮されて湿式プロセス化学薄膜を形成することと、
化学蒸気の前記混合物を循環させ、前記プロセスチャンバ内で磁気浮上ロッドを回転させて前記基板を回転させ、前記基板を均一に処理すること、
変調されたメガソニックエネルギーを用いて前記基板の脱イオン水リンスを実施すること、
溶媒イソプロピルアルコール蒸気を前記プロセスチャンバに注入し、前記基板を乾燥すること、
高温の窒素ガスにより前記プロセスチャンバ内の前記基板を乾燥させること、及び、
処理された前記基板を取り出すこと、を含む方法。
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US16/692,871 | 2019-11-22 | ||
US16/692,871 US11282696B2 (en) | 2019-11-22 | 2019-11-22 | Method and device for wet processing integrated circuit substrates using a mixture of chemical steam vapors and chemical gases |
PCT/CN2020/072396 WO2021098038A1 (en) | 2019-11-22 | 2020-01-16 | Method and device for wet processing integrated circuit substrates using a mixture of chemical steam vapors and chemical gases |
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US11282696B2 (en) | 2022-03-22 |
KR20220086588A (ko) | 2022-06-23 |
CN114930506B (zh) | 2023-07-07 |
CN114930506A (zh) | 2022-08-19 |
DE112020005731T5 (de) | 2022-09-01 |
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US20210159067A1 (en) | 2021-05-27 |
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