JP7210464B2 - Mramのための高面内磁化を有する歳差スピン電流構造 - Google Patents
Mramのための高面内磁化を有する歳差スピン電流構造 Download PDFInfo
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- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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Description
以下の項目は、国際出願時の特許請求の範囲に記載の要素である。
(項目1)
磁気デバイスであって、
第1の平面における第1の合成反強磁性構造であって、前記合成反強磁性構造は、磁気基準層を含み、前記磁気基準層は、前記第1の平面に垂直な磁化ベクトルと、固定された磁化方向とを有している、前記第1の合成反強磁性構造と、
前記磁気基準層上に配置された、第2の平面における非磁性トンネル障壁層と、
前記非磁性トンネル障壁層上に配置された、第3の平面における自由磁性層であって、前記自由磁性層は、前記第3の平面に垂直な磁化ベクトルと、第1の磁化方向から第2の磁化方向に歳差可能な磁化方向とを有し、前記磁気基準層と、前記非磁性トンネル障壁層と、前記自由磁性層とが、磁気トンネル接合を形成する、前記自由磁性層と、
前記自由磁性層上に配置された、第4の平面における非磁性スペーサであって、前記磁気結合層は、MgOを含む、前記非磁性スペーサと、
第5平面における歳差スピン電流磁性層であって、前記歳差スピン電流磁性層は、前記自由磁性層から物理的に分離されており、前記非磁性スペーサによって前記自由磁性層に結合されており、任意の磁気方向に自由に回転可能な磁化成分を有する磁化ベクトルを前記第5面に有し、面心立方(fcc)結晶構造を有する材料を含む、前記歳差スピン電流磁性層と、
前記歳差スピン電流磁性層の上に配置された、第6面におけるキャップ層と、
を備え、
前記キャップ層、前記歳差スピン電流磁性層、前記非磁性スペーサ、前記自由磁性層、前記非磁性トンネル障壁層、及び前記磁気基準層を通って電流が導かれ、前記電流の電子が、前記歳差スピン電流磁性層の前記磁気方向に整列され、
前記歳差スピン電流磁性層の前記磁化方向は、前記自由磁性層の前記磁化方向の歳差に自由に追従し、これにより、前記自由磁性層の前記磁化ベクトルのスイッチングを促進するためのスピン移行トルクが生じる、磁気デバイス。
(項目2)
前記歳差スピン電流磁性層の前記磁化ベクトルの前記磁化方向は、前記第5の平面内にある、項目1に記載の磁気デバイス。
(項目3)
前記歳差スピン電流磁性層の前記磁化方向は、前記第5の平面において自由に回転可能な磁化成分を前記第5の平面に有する、項目1に記載の磁気デバイス。
(項目4)
前記面心立方(fcc)結晶構造を有する前記材料が、ニッケル(Ni)および鉄(Fe)を含むパーマロイである、項目1に記載の磁気デバイス。
(項目5)
前記歳差スピン電流磁性層は、Fe層と、Ru層と、前記面心立方結晶構造を有する前記材料を含む面心立方結晶構造層とを備え、前記Fe層は前記非磁性スペーサ上に配置され、前記Ru層は前記Fe層上に配置され、前記面心立方結晶構造層は前記Ru層上に配置される、項目1に記載の磁気構造。
(項目6)
前記面心立方結晶構造を有する前記材料が、ニッケル(Ni)および鉄(Fe)を含むパーマロイである、項目5に記載の磁気構造。
(項目7)
前記キャップ層が、TaNの層を含む、項目5に記載の磁気構造。
(項目8)
前記歳差スピン電流磁性層が、Fe層と、Ru層と、CoFeB層と、前記面心立方結晶構造を有する前記材料を含む面心立方結晶構造層とを備え、前記Fe層が前記非磁性スペーサ上に配置され、前記Ru層が前記Fe層上に配置され、前記CoFeB層が前記Fe層上に配置され、前記面心立方結晶構造層が前記CoFeB層上に配置される、項目1に記載の磁気構造。
(項目9)
前記面心立方結晶構造を有する前記材料が、ニッケル(Ni)および鉄(Fe)を含むパーマロイである、項目8に記載の磁気構造。
(項目10)
前記キャップ層が、TaNの層を含む、項目9に記載の磁気構造。
(項目11)
前記歳差スピン電流磁性層は、Fe層と、Ru層と、第1のCoFeB層と、前記面心立方結晶構造を有する前記材料を含む面心立方結晶構造層と、第2のCoFeB層と、を備え、前記Fe層は前記非磁性スペーサの上に配置され、前記Ru層は前記Fe層の上に配置され、前記第1のCoFeB層は前記Fe層の上に配置され、前記面心立方結晶構造層は前記第1のCoFeB層の上に配置され、前記第2のCoFeB層は前記面心立方結晶構造層の上に配置される、項目1に記載の磁気構造。
(項目12)
前記面心立方結晶構造を有する前記材料が、ニッケル(Ni)および鉄(Fe)を含むパーマロイである、項目11に記載の磁気構造。
(項目13)
前記キャップ層が、TaNの層を含む、項目12に記載の磁気構造。
(項目14)
前記キャップ層が、MgOの層を含む、項目12に記載の磁気構造。
(項目15)
前記キャップ層が、Ruの層を含む、項目12に記載の磁気構造。
(項目16)
前記歳差スピン電流磁性層が、Fe層と、NiFe層とを備え、前記NiFe層が前記面心立方結晶構造を有する前記材料であり、前記Fe層が前記非磁性スペーサ上に配置され、前記NiFe層が前記Fe層上に配置され、
前記歳差スピン電流磁性層が、さらに、前記NiFe層上に配置された第3の層を備える、項目1に記載の磁気構造。
(項目17)
前記第3の層がCoFeBを含む、項目16に記載の磁気構造。
(項目18)
前記歳差スピン電流磁性層は、前記自由磁性層に磁気的に結合されている、項目1に記載の磁気デバイス。
(項目19)
前記歳差スピン電流磁性層は、前記自由磁性層に電子的に結合されている、項目1に記載の磁気デバイス。
(項目20)
前記歳差スピン電流磁性層の歳差運動は、前記自由磁性層の歳差運動に同期する、項目1に記載の磁気デバイス。
(項目21)
前記歳差スピン電流磁性層の回転周波数は、0より大きい、項目1に記載の磁気デバイス。
(項目22)
前記自由磁性層は、その磁化容易軸が前記垂直方向から離れる方向を指し、その垂直平面に対して角度をなすような有効磁気異方性を有する、項目1に記載の磁気デバイス。
Claims (16)
- 磁気デバイスであって、
第1の平面における第1の合成反強磁性構造であって、前記第1の合成反強磁性構造は、磁気基準層を含み、前記磁気基準層は、前記第1の平面に垂直な磁化ベクトルと、固定された磁化方向とを有している、前記第1の合成反強磁性構造と、
前記磁気基準層上に配置された、第2の平面における非磁性トンネル障壁層と、
前記非磁性トンネル障壁層上に配置された、第3の平面における自由磁性層であって、前記自由磁性層は、前記第3の平面に垂直な磁化ベクトルと、第1の磁化方向から第2の磁化方向に歳差可能な磁化方向とを有し、前記磁気基準層と、前記非磁性トンネル障壁層と、前記自由磁性層とが、磁気トンネル接合を形成する、前記自由磁性層と、
前記自由磁性層上に配置された、第4の平面における非磁性スペーサであって、前記非磁性スペーサは、MgOを含む、前記非磁性スペーサと、
第5の平面における歳差スピン電流磁性層であって、前記歳差スピン電流磁性層は、前記自由磁性層から物理的に分離されており、前記非磁性スペーサによって前記自由磁性層に結合されており、任意の磁気方向に自由に回転可能な磁化成分を有する磁化ベクトルを前記第5の平面に有し、Fe層と、Ru層と、面心立方(fcc)結晶構造を有する材料を含む面心立方結晶構造層と、を備え、前記Fe層は前記非磁性スペーサ上に配置され、前記Ru層は前記Fe層上に配置され、前記面心立方結晶構造層は前記Ru層上に配置される、前記歳差スピン電流磁性層と、
前記歳差スピン電流磁性層の上に配置された、第6面におけるキャップ層と、
を備え、
前記キャップ層、前記歳差スピン電流磁性層、前記非磁性スペーサ、前記自由磁性層、前記非磁性トンネル障壁層、及び前記磁気基準層を通って電流が導かれ、前記電流の電子が、前記歳差スピン電流磁性層の前記磁気方向に整列され、
前記歳差スピン電流磁性層の前記磁気方向は、前記自由磁性層の前記磁化方向の歳差に自由に追従し、これにより、前記自由磁性層の前記磁化ベクトルのスイッチングを促進するためのスピン移行トルクが生じる、磁気デバイス。 - 前記歳差スピン電流磁性層の前記磁化ベクトルの前記磁化方向は、前記第5の平面内にある、請求項1に記載の磁気デバイス。
- 前記歳差スピン電流磁性層の前記磁化方向は、前記第5の平面において自由に回転可能な磁化成分を前記第5の平面に有する、請求項1又は2に記載の磁気デバイス。
- 磁気デバイスであって、
第1の平面における第1の合成反強磁性構造であって、前記第1の合成反強磁性構造は、磁気基準層を含み、前記磁気基準層は、前記第1の平面に垂直な磁化ベクトルと、固定された磁化方向とを有している、前記第1の合成反強磁性構造と、
前記磁気基準層上に配置された、第2の平面における非磁性トンネル障壁層と、
前記非磁性トンネル障壁層上に配置された、第3の平面における自由磁性層であって、前記自由磁性層は、前記第3の平面に垂直な磁化ベクトルと、第1の磁化方向から第2の磁化方向に歳差可能な磁化方向とを有し、前記磁気基準層と、前記非磁性トンネル障壁層と、前記自由磁性層とが、磁気トンネル接合を形成する、前記自由磁性層と、
前記自由磁性層上に配置された、第4の平面における非磁性スペーサであって、前記非磁性スペーサは、MgOを含む、前記非磁性スペーサと、
第5の平面における歳差スピン電流磁性層であって、前記歳差スピン電流磁性層は、前記自由磁性層から物理的に分離されており、前記非磁性スペーサによって前記自由磁性層に結合されており、任意の磁気方向に自由に回転可能な磁化成分を有する磁化ベクトルを前記第5の平面に有し、Fe層と、Ru層と、CoFeB層と、面心立方(fcc)結晶構造を有する材料を含む面心立方結晶構造層と、を備え、前記Fe層が前記非磁性スペーサ上に配置され、前記Ru層が前記Fe層上に配置され、前記CoFeB層が前記Fe層上に配置され、前記面心立方結晶構造層が前記CoFeB層上に配置される、前記歳差スピン電流磁性層と、
前記歳差スピン電流磁性層の上に配置された、第6面におけるキャップ層と、
を備え、
前記キャップ層、前記歳差スピン電流磁性層、前記非磁性スペーサ、前記自由磁性層、前記非磁性トンネル障壁層、及び前記磁気基準層を通って電流が導かれ、前記電流の電子が、前記歳差スピン電流磁性層の前記磁気方向に整列され、
前記歳差スピン電流磁性層の前記磁気方向は、前記自由磁性層の前記磁化方向の歳差に自由に追従し、これにより、前記自由磁性層の前記磁化ベクトルのスイッチングを促進するためのスピン移行トルクが生じる、磁気デバイス。 - 前記歳差スピン電流磁性層は、さらに、第2のCoFeB層を備え、前記第2のCoFeB層は前記面心立方結晶構造層の上に配置される、請求項1から4のいずれか一項に記載の磁気デバイス。
- 前記面心立方結晶構造を有する前記材料が、ニッケル(Ni)および鉄(Fe)を含むパーマロイである、請求項1から5のいずれか一項に記載の磁気デバイス。
- 前記キャップ層が、TaNの層を含む、請求項6に記載の磁気デバイス。
- 前記キャップ層が、MgOの層を含む、請求項6に記載の磁気デバイス。
- 前記キャップ層が、Ruの層を含む、請求項6に記載の磁気デバイス。
- NiFe層が前記面心立方結晶構造を有する前記材料であり、
前記歳差スピン電流磁性層が、さらに、前記NiFe層上に配置された第3の層を備える、請求項1から9のいずれか一項に記載の磁気デバイス。 - 前記第3の層がCoFeBを含む、請求項10に記載の磁気デバイス。
- 前記歳差スピン電流磁性層は、前記自由磁性層に磁気的に結合されている、請求項1から11のいずれか一項に記載の磁気デバイス。
- 前記歳差スピン電流磁性層は、前記自由磁性層に電子的に結合されている、請求項1から12のいずれか一項に記載の磁気デバイス。
- 前記歳差スピン電流磁性層の歳差運動は、前記自由磁性層の歳差運動に同期する、請求項1から13のいずれか一項に記載の磁気デバイス。
- 前記歳差スピン電流磁性層の回転周波数は、0より大きい、請求項1から14のいずれか一項に記載の磁気デバイス。
- 前記自由磁性層は、その磁化容易軸が垂直方向から離れる方向を指し、その垂直平面に対して角度をなすような有効磁気異方性を有する、請求項1から15のいずれか一項に記載の磁気デバイス。
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