JP5470602B2 - 磁気記憶装置 - Google Patents
磁気記憶装置 Download PDFInfo
- Publication number
- JP5470602B2 JP5470602B2 JP2009089207A JP2009089207A JP5470602B2 JP 5470602 B2 JP5470602 B2 JP 5470602B2 JP 2009089207 A JP2009089207 A JP 2009089207A JP 2009089207 A JP2009089207 A JP 2009089207A JP 5470602 B2 JP5470602 B2 JP 5470602B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- layer
- die
- magnetic shield
- storage device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 308
- 238000003860 storage Methods 0.000 title claims description 32
- 239000010410 layer Substances 0.000 claims description 230
- 230000005415 magnetization Effects 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 25
- 230000000694 effects Effects 0.000 claims description 22
- 239000003302 ferromagnetic material Substances 0.000 claims description 17
- 239000012790 adhesive layer Substances 0.000 claims description 14
- 230000035699 permeability Effects 0.000 claims description 11
- 230000004907 flux Effects 0.000 claims description 8
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229920006395 saturated elastomer Polymers 0.000 claims 1
- 239000010408 film Substances 0.000 description 148
- 239000011229 interlayer Substances 0.000 description 67
- 238000000034 method Methods 0.000 description 43
- 239000010949 copper Substances 0.000 description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 30
- 229910052802 copper Inorganic materials 0.000 description 30
- 230000005294 ferromagnetic effect Effects 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 21
- 239000000956 alloy Substances 0.000 description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 16
- 230000008569 process Effects 0.000 description 15
- 230000001681 protective effect Effects 0.000 description 15
- 238000005530 etching Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 12
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 9
- 230000005290 antiferromagnetic effect Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000000696 magnetic material Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910000531 Co alloy Inorganic materials 0.000 description 4
- 229910000914 Mn alloy Inorganic materials 0.000 description 4
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 229910000889 permalloy Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001313 Cobalt-iron alloy Inorganic materials 0.000 description 2
- -1 IrMn Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910001035 Soft ferrite Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003534 oscillatory effect Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- 229910015136 FeMn Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910005811 NiMnSb Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910002064 alloy oxide Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- HBCZDZWFGVSUDJ-UHFFFAOYSA-N chromium tantalum Chemical compound [Cr].[Ta] HBCZDZWFGVSUDJ-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Description
本発明の磁気記憶装置は、ダイと、第2および第3の磁気シールド構造と、リードフレーム部材とを有する。ダイは、基板と、第1および第2配線と、磁気記憶素子と、第1の磁気シールド構造とを有する。第1配線は、基板上に設けられ、一の方向に延びる部分を有する。第2配線は、基板上に設けられ、平面視において第1配線と交差し、かつ基板の厚み方向において第1配線と間隔を空けて配置されている。磁気記憶素子は、第1および第2配線が間隔を空けて互いに交差する領域において第1および第2配線に少なくとも一部が挟まれている。第1の磁気シールド構造は、平面視において磁気記憶素子を覆うように形成されている。第2および第3の磁気シールド構造は、厚み方向においてダイを挟んでいる。リードフレーム部材は、ダイが実装され、かつ強磁性体を含有する。リードフレーム部材は平面視においてダイの一部のみと重複している。
(メモリセルの回路と構造)
まず、本発明の実施の形態における磁気記憶装置に関し、磁気記憶装置のメモリセルの回路について説明する。
図2を参照して、半導体基板11におけるメモリセル領域MRでは、素子分離絶縁膜12によって区切られた素子形成領域の表面(半導体基板11の表面)に素子選択用トランジスタTRが形成されている。素子選択用トランジスタTRは、ドレイン領域Dと、ソース領域Sと、ゲート電極本体Gとを主に有している。ドレイン領域Dおよびソース領域Sは、互いに所定の距離を開け半導体基板11の表面に形成されている。ドレイン領域Dおよびソース領域Sは、互いに所定導電型の不純物領域から形成されている。ゲート電極本体Gは、ドレイン領域Dおよびソース領域Sに挟まれる領域上にゲート絶縁膜GIを介在して形成されている。ゲート電極本体Gの側壁は、サイドウォール状の側壁絶縁膜SIによって覆われている。
次に、メモリセルの動作について、図2に示す構造を例として説明する。
図4(A)および(B)を参照して、本実施の形態の磁気記憶装置100は、モールドパッケージ115(モールド構造)と、ダイパッド112と、リード111と、ワイヤ116と、上述のメモリセル構造を有するMRAMダイ110と、磁気シールド板113、114(第2および第3の磁気シールド構造)とで主に構成される。ダイパッド112とは、図5に示すリードフレーム部材において、MRAMダイ110が実装される部分である。
図7を参照して、半導体基板11の主表面における所定の領域に素子分離絶縁膜12を形成することによって、メモリセル領域MRおよび周辺回路領域RRが形成される。そのメモリセル領域MRおよび周辺回路領域RRに位置する半導体基板11の表面にゲート絶縁膜GIを介してゲート電極本体Gが形成される。そのゲート電極本体Gなどをマスクとして半導体基板11の表面に所定導電型の不純物を導入することにより、不純物領域からなるドレイン領域Dおよびソース領域Sと、1対のソース/ドレイン領域S/Dが形成される。こうして、メモリセル領域MRでは、ゲート電極G、ドレイン領域Dおよびソース領域Sを含む素子選択用トランジスタTRが形成され、周辺回路領域RRでは、論理回路を構成するトランジスタTRAが形成される。
図14を参照して、リードフレーム部材200が準備される。リードフレーム部材200は、図中V部(図5に対応)に示すダイパッド112およびダイパッド・サポート119と、リード111と、ダム・バー202と、外枠203とを有する。
上述した磁気記憶装置100(図4(B))では、ダイパッド112と磁気シールド板113を、それぞれ高飽和磁束密度、高透磁率特性を有する材料系で構成するとともに、ダイパッド112の大きさをMRAMダイ110よりも小さくした。そして、少なくともMRAMダイ110のメモリ領域部よりも大きいサイズの磁気シールド板114を、その平面形状において、長辺/短辺比を3以下とする形状に加工するとともに、モールドパッケージ115の材料との密着性を高めるテクスチャー加工を施してMRAMダイ110を挟むように配置した。さらに、MRAMダイの製造プロセスの中でも、磁気シールド層101を形成した。これらを適用することで、既存のモールドパッケージとの整合性が高く、8kA/m(100エルステッド)以上の強い擾乱磁界下であってもメモリセル領域MR(図2)に影響する磁界強度を地磁気レベルに低減できたため(図16)、情報の記録動作時における安定動作と、記録情報の安定保持が可能となる磁気記憶装置100を提供することができた。
Claims (15)
- ダイを備え、
前記ダイは、
基板と、
前記基板上に設けられ、一の方向に延びる部分を有する第1配線と、
前記基板上に設けられ、平面視において前記第1配線と交差し、かつ前記基板の厚み方向において前記第1配線と間隔を空けて配置された第2配線と、
前記第1および第2配線が前記間隔を空けて互いに交差する領域において前記第1および第2配線に少なくとも一部が挟まれた磁気記憶素子と、
平面視において前記磁気記憶素子を覆うように形成された第1の磁気シールド構造とを含み、さらに
厚み方向において前記ダイを挟む第2および第3の磁気シールド構造と、
前記ダイが実装され、かつ強磁性体を含有するリードフレーム部材とを備え、
前記リードフレーム部材は平面視において前記ダイの一部のみと重複しており、
前記第2および第3の磁気シールド構造のうち、一方の大きさは前記ダイの大きさより大きく、他方の大きさは前記ダイの大きさより小さいことを特徴とする、磁気記憶装置。 - 前記第2および第3の磁気シールド構造のうちの前記他方は、前記ダイのメモリセル領域部分のすべてを平面視において覆っている、請求項1に記載の磁気記憶装置。
- 前記第2および第3の磁気シールド構造の各々は前記ダイのメモリセル領域部分を全て覆い、かつ前記第2および第3の磁気シールド構造の各々の端部が前記メモリセル領域部分の端部と少なくとも0.3mmの距離をなす、請求項1に記載の磁気記憶装置。
- 前記リードフレーム部材のうち平面視において前記ダイと重複する部分は1.2テスラ以上の高飽和磁束密度材料からなり、前記第2および第3の磁気シールド構造との各々は、比透磁率5000以上の高透磁率材料からなる、請求項1に記載の磁気記憶装置。
- 前記第2および第3の磁気シールド構造の少なくともいずれかは、長辺および短辺を有する平面形状を有し、かつ前記長辺および前記短辺の比は3以下である、請求項1に記載の磁気記憶装置。
- 前記第2および第3の磁気シールド構造の少なくともいずれかは、モールド構造と接触し、かつ前記モールド構造との接触面において周期的な凸凹構造を有する、請求項1に記載の磁気記憶装置。
- 前記凸凹構造は、ドット状、矩形状および溝状のいずれかの形状を有する、請求項6に記載の磁気記憶装置。
- 前記第2および第3の磁気シールド構造の各々と、前記ダイとは、接着層を介して接続されている、請求項1に記載の磁気記憶装置。
- 前記接着層は強磁性材料を含んでいる、請求項8に記載の磁気記憶装置。
- 前記第2および第3の磁気シールド構造の少なくともいずれかは、平面視における端部において、前記ダイに対して遠ざかる方向に突出した凸部を有する、請求項1に記載の磁気記憶装置。
- 前記第2および第3の磁気シールド構造の間隔は、0.15mm以上0.5mm以下である、請求項1に記載の磁気記憶装置。
- 前記第1および第2配線の少なくともいずれかと、前記第1の磁気シールド構造との間隔は、100nm以下である、請求項1に記載の磁気記憶装置。
- 前記第1の磁気シールド構造は複数の部分に分割されており、前記複数の部分の各々は前記第1および第2配線のいずれかが延びる方向に延びている、請求項1に記載の磁気記憶装置。
- 前記磁気記憶素子は、磁化の方向が固定された固着層と、磁化容易軸を持つ記録層とを含み、
前記第1および第2配線に所定の電流を流すことで生じる磁界によって前記記録層の磁化方向を制御することによって情報が記録され、かつ前記情報は磁気抵抗効果によって読み出されるように構成された、請求項1に記載の磁気記憶装置。 - 前記磁気記憶素子は、磁化の方向が固定された固着層と、磁化容易軸を持つ記録層とを含み、
前記記録層にスピン偏極した電流を流すことによって生じるトルクをもって前記記録層の磁化方向を制御することによって情報が記録され、かつ前記情報は磁気抵抗効果によって読み出されるように構成された、請求項1に記載の磁気記憶装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009089207A JP5470602B2 (ja) | 2009-04-01 | 2009-04-01 | 磁気記憶装置 |
US12/728,885 US8492881B2 (en) | 2009-04-01 | 2010-03-22 | Magnetic storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009089207A JP5470602B2 (ja) | 2009-04-01 | 2009-04-01 | 磁気記憶装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010245106A JP2010245106A (ja) | 2010-10-28 |
JP2010245106A5 JP2010245106A5 (ja) | 2012-04-19 |
JP5470602B2 true JP5470602B2 (ja) | 2014-04-16 |
Family
ID=42826066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009089207A Expired - Fee Related JP5470602B2 (ja) | 2009-04-01 | 2009-04-01 | 磁気記憶装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8492881B2 (ja) |
JP (1) | JP5470602B2 (ja) |
Families Citing this family (96)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101108150B1 (ko) * | 2009-04-21 | 2012-01-31 | 삼성모바일디스플레이주식회사 | 스토커 시스템 및 스토커 관리 방법 |
US7965538B2 (en) * | 2009-07-13 | 2011-06-21 | Seagate Technology Llc | Active protection device for resistive random access memory (RRAM) formation |
JP2012109307A (ja) | 2010-11-15 | 2012-06-07 | Renesas Electronics Corp | 半導体装置及び半導体装置の製造方法 |
JP6144868B2 (ja) * | 2010-11-18 | 2017-06-07 | 日東電工株式会社 | フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、及び、フリップチップ型半導体裏面用フィルムの製造方法 |
JP5695453B2 (ja) * | 2011-03-07 | 2015-04-08 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2013008870A (ja) | 2011-06-24 | 2013-01-10 | Toshiba Corp | 半導体記憶装置 |
JP5858335B2 (ja) * | 2012-01-16 | 2016-02-10 | 大日本印刷株式会社 | 半導体装置 |
US8791533B2 (en) * | 2012-01-30 | 2014-07-29 | Broadcom Corporation | Semiconductor package having an interposer configured for magnetic signaling |
JP5813596B2 (ja) * | 2012-08-10 | 2015-11-17 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US8952504B2 (en) * | 2013-02-08 | 2015-02-10 | Qualcomm Incorporated | Small form factor magnetic shield for magnetorestrictive random access memory (MRAM) |
US8937379B1 (en) * | 2013-07-03 | 2015-01-20 | Stats Chippac Ltd. | Integrated circuit packaging system with trenched leadframe and method of manufacture thereof |
JP2015060970A (ja) * | 2013-09-19 | 2015-03-30 | 株式会社東芝 | 磁気抵抗素子および磁気メモリ |
KR102214798B1 (ko) | 2014-02-05 | 2021-02-10 | 삼성전자주식회사 | 패키지 기판 및 이를 포함하는 반도체 패키지 |
US9263667B1 (en) | 2014-07-25 | 2016-02-16 | Spin Transfer Technologies, Inc. | Method for manufacturing MTJ memory device |
US9337412B2 (en) | 2014-09-22 | 2016-05-10 | Spin Transfer Technologies, Inc. | Magnetic tunnel junction structure for MRAM device |
US10510946B2 (en) | 2015-07-23 | 2019-12-17 | Globalfoundries Singapore Pte. Ltd. | MRAM chip magnetic shielding |
US10475985B2 (en) | 2015-03-26 | 2019-11-12 | Globalfoundries Singapore Pte. Ltd. | MRAM magnetic shielding with fan-out wafer level packaging |
US10468590B2 (en) | 2015-04-21 | 2019-11-05 | Spin Memory, Inc. | High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory |
US9728712B2 (en) | 2015-04-21 | 2017-08-08 | Spin Transfer Technologies, Inc. | Spin transfer torque structure for MRAM devices having a spin current injection capping layer |
WO2016174509A1 (en) * | 2015-04-27 | 2016-11-03 | Kabushiki Kaisha Toshiba | Magnetic memory device |
US10096768B2 (en) | 2015-05-26 | 2018-10-09 | Globalfoundries Singapore Pte. Ltd. | Magnetic shielding for MTJ device or bit |
US9853206B2 (en) | 2015-06-16 | 2017-12-26 | Spin Transfer Technologies, Inc. | Precessional spin current structure for MRAM |
US9786839B2 (en) * | 2015-07-23 | 2017-10-10 | Globalfoundries Singapore Pte. Ltd. | 3D MRAM with through silicon vias or through silicon trenches magnetic shielding |
US9773974B2 (en) | 2015-07-30 | 2017-09-26 | Spin Transfer Technologies, Inc. | Polishing stop layer(s) for processing arrays of semiconductor elements |
US10163479B2 (en) | 2015-08-14 | 2018-12-25 | Spin Transfer Technologies, Inc. | Method and apparatus for bipolar memory write-verify |
KR102369523B1 (ko) | 2015-09-08 | 2022-03-03 | 삼성전자주식회사 | 자기 저항 메모리 장치 및 그 제조 방법 |
US9741926B1 (en) | 2016-01-28 | 2017-08-22 | Spin Transfer Technologies, Inc. | Memory cell having magnetic tunnel junction and thermal stability enhancement layer |
US11151042B2 (en) | 2016-09-27 | 2021-10-19 | Integrated Silicon Solution, (Cayman) Inc. | Error cache segmentation for power reduction |
US10366774B2 (en) | 2016-09-27 | 2019-07-30 | Spin Memory, Inc. | Device with dynamic redundancy registers |
US10437491B2 (en) | 2016-09-27 | 2019-10-08 | Spin Memory, Inc. | Method of processing incomplete memory operations in a memory device during a power up sequence and a power down sequence using a dynamic redundancy register |
US10446210B2 (en) | 2016-09-27 | 2019-10-15 | Spin Memory, Inc. | Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registers |
US11119936B2 (en) | 2016-09-27 | 2021-09-14 | Spin Memory, Inc. | Error cache system with coarse and fine segments for power optimization |
US11119910B2 (en) | 2016-09-27 | 2021-09-14 | Spin Memory, Inc. | Heuristics for selecting subsegments for entry in and entry out operations in an error cache system with coarse and fine grain segments |
US10628316B2 (en) | 2016-09-27 | 2020-04-21 | Spin Memory, Inc. | Memory device with a plurality of memory banks where each memory bank is associated with a corresponding memory instruction pipeline and a dynamic redundancy register |
US10991410B2 (en) | 2016-09-27 | 2021-04-27 | Spin Memory, Inc. | Bi-polar write scheme |
US10437723B2 (en) | 2016-09-27 | 2019-10-08 | Spin Memory, Inc. | Method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory device |
US10360964B2 (en) | 2016-09-27 | 2019-07-23 | Spin Memory, Inc. | Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device |
US10460781B2 (en) | 2016-09-27 | 2019-10-29 | Spin Memory, Inc. | Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank |
US10546625B2 (en) | 2016-09-27 | 2020-01-28 | Spin Memory, Inc. | Method of optimizing write voltage based on error buffer occupancy |
US10818331B2 (en) | 2016-09-27 | 2020-10-27 | Spin Memory, Inc. | Multi-chip module for MRAM devices with levels of dynamic redundancy registers |
KR20180082709A (ko) | 2017-01-10 | 2018-07-19 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US10672976B2 (en) | 2017-02-28 | 2020-06-02 | Spin Memory, Inc. | Precessional spin current structure with high in-plane magnetization for MRAM |
US10665777B2 (en) | 2017-02-28 | 2020-05-26 | Spin Memory, Inc. | Precessional spin current structure with non-magnetic insertion layer for MRAM |
US10032978B1 (en) | 2017-06-27 | 2018-07-24 | Spin Transfer Technologies, Inc. | MRAM with reduced stray magnetic fields |
US10489245B2 (en) | 2017-10-24 | 2019-11-26 | Spin Memory, Inc. | Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them |
US10481976B2 (en) | 2017-10-24 | 2019-11-19 | Spin Memory, Inc. | Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiers |
US10656994B2 (en) | 2017-10-24 | 2020-05-19 | Spin Memory, Inc. | Over-voltage write operation of tunnel magnet-resistance (“TMR”) memory device and correcting failure bits therefrom by using on-the-fly bit failure detection and bit redundancy remapping techniques |
US10529439B2 (en) | 2017-10-24 | 2020-01-07 | Spin Memory, Inc. | On-the-fly bit failure detection and bit redundancy remapping techniques to correct for fixed bit defects |
US10679685B2 (en) | 2017-12-27 | 2020-06-09 | Spin Memory, Inc. | Shared bit line array architecture for magnetoresistive memory |
US10891997B2 (en) | 2017-12-28 | 2021-01-12 | Spin Memory, Inc. | Memory array with horizontal source line and a virtual source line |
US10424726B2 (en) | 2017-12-28 | 2019-09-24 | Spin Memory, Inc. | Process for improving photoresist pillar adhesion during MRAM fabrication |
US10360962B1 (en) | 2017-12-28 | 2019-07-23 | Spin Memory, Inc. | Memory array with individually trimmable sense amplifiers |
US10395712B2 (en) | 2017-12-28 | 2019-08-27 | Spin Memory, Inc. | Memory array with horizontal source line and sacrificial bitline per virtual source |
US10516094B2 (en) | 2017-12-28 | 2019-12-24 | Spin Memory, Inc. | Process for creating dense pillars using multiple exposures for MRAM fabrication |
US10811594B2 (en) | 2017-12-28 | 2020-10-20 | Spin Memory, Inc. | Process for hard mask development for MRAM pillar formation using photolithography |
US10395711B2 (en) | 2017-12-28 | 2019-08-27 | Spin Memory, Inc. | Perpendicular source and bit lines for an MRAM array |
US10236047B1 (en) | 2017-12-29 | 2019-03-19 | Spin Memory, Inc. | Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM |
US10270027B1 (en) | 2017-12-29 | 2019-04-23 | Spin Memory, Inc. | Self-generating AC current assist in orthogonal STT-MRAM |
US10367139B2 (en) | 2017-12-29 | 2019-07-30 | Spin Memory, Inc. | Methods of manufacturing magnetic tunnel junction devices |
US10840439B2 (en) | 2017-12-29 | 2020-11-17 | Spin Memory, Inc. | Magnetic tunnel junction (MTJ) fabrication methods and systems |
US10840436B2 (en) | 2017-12-29 | 2020-11-17 | Spin Memory, Inc. | Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture |
US10546624B2 (en) | 2017-12-29 | 2020-01-28 | Spin Memory, Inc. | Multi-port random access memory |
US10360961B1 (en) | 2017-12-29 | 2019-07-23 | Spin Memory, Inc. | AC current pre-charge write-assist in orthogonal STT-MRAM |
US10784439B2 (en) | 2017-12-29 | 2020-09-22 | Spin Memory, Inc. | Precessional spin current magnetic tunnel junction devices and methods of manufacture |
US10236048B1 (en) | 2017-12-29 | 2019-03-19 | Spin Memory, Inc. | AC current write-assist in orthogonal STT-MRAM |
US10886330B2 (en) | 2017-12-29 | 2021-01-05 | Spin Memory, Inc. | Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitch |
US10199083B1 (en) | 2017-12-29 | 2019-02-05 | Spin Transfer Technologies, Inc. | Three-terminal MRAM with ac write-assist for low read disturb |
US10424723B2 (en) | 2017-12-29 | 2019-09-24 | Spin Memory, Inc. | Magnetic tunnel junction devices including an optimization layer |
US10141499B1 (en) | 2017-12-30 | 2018-11-27 | Spin Transfer Technologies, Inc. | Perpendicular magnetic tunnel junction device with offset precessional spin current layer |
US10255962B1 (en) | 2017-12-30 | 2019-04-09 | Spin Memory, Inc. | Microwave write-assist in orthogonal STT-MRAM |
US10229724B1 (en) | 2017-12-30 | 2019-03-12 | Spin Memory, Inc. | Microwave write-assist in series-interconnected orthogonal STT-MRAM devices |
US10236439B1 (en) | 2017-12-30 | 2019-03-19 | Spin Memory, Inc. | Switching and stability control for perpendicular magnetic tunnel junction device |
US10319900B1 (en) | 2017-12-30 | 2019-06-11 | Spin Memory, Inc. | Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density |
US10339993B1 (en) | 2017-12-30 | 2019-07-02 | Spin Memory, Inc. | Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching |
US10468588B2 (en) | 2018-01-05 | 2019-11-05 | Spin Memory, Inc. | Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer |
US10438996B2 (en) | 2018-01-08 | 2019-10-08 | Spin Memory, Inc. | Methods of fabricating magnetic tunnel junctions integrated with selectors |
US10438995B2 (en) | 2018-01-08 | 2019-10-08 | Spin Memory, Inc. | Devices including magnetic tunnel junctions integrated with selectors |
US10446744B2 (en) | 2018-03-08 | 2019-10-15 | Spin Memory, Inc. | Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same |
US10388861B1 (en) | 2018-03-08 | 2019-08-20 | Spin Memory, Inc. | Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same |
US11107974B2 (en) | 2018-03-23 | 2021-08-31 | Spin Memory, Inc. | Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer |
US20190296228A1 (en) | 2018-03-23 | 2019-09-26 | Spin Transfer Technologies, Inc. | Three-Dimensional Arrays with Magnetic Tunnel Junction Devices Including an Annular Free Magnetic Layer and a Planar Reference Magnetic Layer |
US10784437B2 (en) | 2018-03-23 | 2020-09-22 | Spin Memory, Inc. | Three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer |
US11107978B2 (en) | 2018-03-23 | 2021-08-31 | Spin Memory, Inc. | Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer |
US10411185B1 (en) | 2018-05-30 | 2019-09-10 | Spin Memory, Inc. | Process for creating a high density magnetic tunnel junction array test platform |
US10381551B1 (en) | 2018-06-29 | 2019-08-13 | Sandisk Technologies Llc | Spin orbit torque magnetoresistive random access memory containing shielding element and method of making thereof |
US10553783B2 (en) * | 2018-06-29 | 2020-02-04 | Sandisk Technologies Llc | Spin orbit torque magnetoresistive random access memory containing shielding element and method of making thereof |
US10559338B2 (en) | 2018-07-06 | 2020-02-11 | Spin Memory, Inc. | Multi-bit cell read-out techniques |
US10600478B2 (en) | 2018-07-06 | 2020-03-24 | Spin Memory, Inc. | Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations |
US10692569B2 (en) | 2018-07-06 | 2020-06-23 | Spin Memory, Inc. | Read-out techniques for multi-bit cells |
US10593396B2 (en) | 2018-07-06 | 2020-03-17 | Spin Memory, Inc. | Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations |
US10650875B2 (en) | 2018-08-21 | 2020-05-12 | Spin Memory, Inc. | System for a wide temperature range nonvolatile memory |
US10699761B2 (en) | 2018-09-18 | 2020-06-30 | Spin Memory, Inc. | Word line decoder memory architecture |
US10971680B2 (en) | 2018-10-01 | 2021-04-06 | Spin Memory, Inc. | Multi terminal device stack formation methods |
US11621293B2 (en) | 2018-10-01 | 2023-04-04 | Integrated Silicon Solution, (Cayman) Inc. | Multi terminal device stack systems and methods |
US10580827B1 (en) | 2018-11-16 | 2020-03-03 | Spin Memory, Inc. | Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching |
US11107979B2 (en) | 2018-12-28 | 2021-08-31 | Spin Memory, Inc. | Patterned silicide structures and methods of manufacture |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07193180A (ja) * | 1993-12-27 | 1995-07-28 | Toshiba Corp | 樹脂封止型半導体装置 |
JPH11168169A (ja) * | 1997-12-04 | 1999-06-22 | Hitachi Ltd | リードフレームおよびそれを用いた半導体装置ならびにその製造方法 |
US6104633A (en) | 1998-02-10 | 2000-08-15 | International Business Machines Corporation | Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices |
JP3234814B2 (ja) * | 1998-06-30 | 2001-12-04 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気ヘッドアセンブリ及び磁気記録装置 |
US6005800A (en) * | 1998-11-23 | 1999-12-21 | International Business Machines Corporation | Magnetic memory array with paired asymmetric memory cells for improved write margin |
US6165803A (en) | 1999-05-17 | 2000-12-26 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
JP4458703B2 (ja) | 2001-03-16 | 2010-04-28 | 株式会社東芝 | 磁気抵抗効果素子、その製造方法、磁気ランダムアクセスメモリ、携帯端末装置、磁気ヘッド及び磁気再生装置 |
JP2003115578A (ja) * | 2001-10-05 | 2003-04-18 | Canon Inc | 不揮発固体磁気メモリ装置、該不揮発固体磁気メモリ装置の製造方法およびマルチ・チップ・パッケージ |
US6570783B1 (en) * | 2001-11-15 | 2003-05-27 | Micron Technology, Inc. | Asymmetric MRAM cell and bit design for improving bit yield |
US6936763B2 (en) * | 2002-06-28 | 2005-08-30 | Freescale Semiconductor, Inc. | Magnetic shielding for electronic circuits which include magnetic materials |
JP2004047656A (ja) * | 2002-07-11 | 2004-02-12 | Sony Corp | 磁気不揮発性メモリ素子およびその製造方法 |
JP4147466B2 (ja) * | 2002-12-10 | 2008-09-10 | ソニー株式会社 | 磁気メモリ装置 |
JP4096302B2 (ja) * | 2002-12-16 | 2008-06-04 | ソニー株式会社 | 磁気メモリ装置 |
JP4013140B2 (ja) * | 2003-01-15 | 2007-11-28 | ソニー株式会社 | 磁気メモリ装置 |
JP2004296858A (ja) | 2003-03-27 | 2004-10-21 | Mitsubishi Electric Corp | 磁気記憶素子及び磁気記憶装置 |
JP4667763B2 (ja) | 2004-04-20 | 2011-04-13 | ルネサスエレクトロニクス株式会社 | 磁気記憶素子および半導体装置 |
JP2005340237A (ja) * | 2004-05-24 | 2005-12-08 | Renesas Technology Corp | 磁気記憶装置 |
US8120949B2 (en) * | 2006-04-27 | 2012-02-21 | Avalanche Technology, Inc. | Low-cost non-volatile flash-RAM memory |
JP5062248B2 (ja) * | 2007-02-27 | 2012-10-31 | ルネサスエレクトロニクス株式会社 | 磁気メモリチップ装置の製造方法 |
JP4941264B2 (ja) * | 2007-12-07 | 2012-05-30 | 大日本印刷株式会社 | 半導体装置用のメタルシールド板、メタルシールド用シート、半導体装置、メタルシールド用シートの製造方法、およびメタルシールド板の製造方法 |
JP5343261B2 (ja) * | 2008-11-18 | 2013-11-13 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5425461B2 (ja) * | 2008-12-26 | 2014-02-26 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
-
2009
- 2009-04-01 JP JP2009089207A patent/JP5470602B2/ja not_active Expired - Fee Related
-
2010
- 2010-03-22 US US12/728,885 patent/US8492881B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8492881B2 (en) | 2013-07-23 |
JP2010245106A (ja) | 2010-10-28 |
US20100254182A1 (en) | 2010-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5470602B2 (ja) | 磁気記憶装置 | |
US8362581B2 (en) | Magnetic memory element and magnetic memory device | |
TWI222230B (en) | Magnetic memory | |
JP5337817B2 (ja) | 磁気抵抗効果素子、それを用いた磁気メモリセル及び磁気ランダムアクセスメモリ | |
JP5146836B2 (ja) | 磁気ランダムアクセスメモリ及びその製造方法 | |
US8283712B2 (en) | Semiconductor memory device and manufacturing method for semiconductor memory device | |
US8013407B2 (en) | Magnetic memory device having a recording layer | |
JP4400037B2 (ja) | 磁気ランダムアクセスメモリ,及びその製造方法 | |
JP2007273493A (ja) | 磁気メモリ装置及びその製造方法 | |
US7796419B2 (en) | Magnetic memory | |
JP2011527094A (ja) | 分離cppアシスト書込を行うスピン注入mramデバイス | |
US8427866B2 (en) | Magnetic storage element and magnetic storage device | |
JP4618989B2 (ja) | 磁気記憶半導体装置 | |
JP2009081390A (ja) | 磁壁移動型mram及びその製造方法 | |
US7683446B2 (en) | Magnetic memory using spin injection flux reversal | |
US20110291209A1 (en) | Magnetic memory device | |
JP2008218736A (ja) | 磁気記憶装置 | |
JP5103259B2 (ja) | 磁気記憶素子及び磁気記憶装置 | |
JP2009146995A (ja) | 磁気記憶装置 | |
JP2007123512A (ja) | 磁気記憶装置 | |
US8518562B2 (en) | Magnetic storage device | |
JP4876572B2 (ja) | 磁気メモリ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120302 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120302 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130906 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130917 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131111 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140107 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140114 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5470602 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |