JP6532941B2 - ブロック共重合体 - Google Patents
ブロック共重合体 Download PDFInfo
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- JP6532941B2 JP6532941B2 JP2017517261A JP2017517261A JP6532941B2 JP 6532941 B2 JP6532941 B2 JP 6532941B2 JP 2017517261 A JP2017517261 A JP 2017517261A JP 2017517261 A JP2017517261 A JP 2017517261A JP 6532941 B2 JP6532941 B2 JP 6532941B2
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- 229920001400 block copolymer Polymers 0.000 title claims description 116
- 125000003118 aryl group Chemical group 0.000 claims description 53
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- 125000005843 halogen group Chemical group 0.000 claims description 25
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 20
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- 229920006254 polymer film Polymers 0.000 claims description 20
- 229910052717 sulfur Inorganic materials 0.000 claims description 18
- 125000004434 sulfur atom Chemical group 0.000 claims description 18
- 125000004450 alkenylene group Chemical group 0.000 claims description 17
- 125000004419 alkynylene group Chemical group 0.000 claims description 17
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- 239000000758 substrate Substances 0.000 claims description 11
- 125000001424 substituent group Chemical group 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 238000005160 1H NMR spectroscopy Methods 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 3
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- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 20
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- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 2
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
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- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
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- 125000001188 haloalkyl group Chemical group 0.000 description 2
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- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
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- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
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- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
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- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00428—Etch mask forming processes not provided for in groups B81C1/00396 - B81C1/0042
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/007—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/12—Polymerisation in non-solvents
- C08F2/14—Organic medium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/06—Hydrocarbons
- C08F212/08—Styrene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
- C08F216/12—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an ether radical
-
- C—CHEMISTRY; METALLURGY
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Description
X=1+(D×M)/(K×L)
数式1でDは第1ブロックの密度(D1)と第2ブロックの密度(D2)の比率(D2/D1)であり、Mは、第1ブロックのモル質量(M1)と第2ブロックのモル質量(M2)の比率(M1/M2)であり、Kは1H−NMRで第2ブロックに起因して現れるピークの面積(A2)と第1ブロックに起因して現れるピークの面積(A1)の比率(A2/A1)であり、Lは第1ブロックの繰返し単位1モルが有する水素原子の数(H1)と第2ブロックの繰返し単位1モルが有する水素原子の数(H2)の比率(H1/H2)である。
NMR分析は三重共鳴5mm探針(probe)を有するVarian Unity Inova(500MHz)分光計を含むNMR分光計を使って常温で遂行した。NMR測定用溶媒(CDCl3)に分析対象物質を約10mg/ml程度の濃度に希釈させて使用し、化学的移動はppmで表現した。
br=広い信号、s=単一線、d=二重線、dd=二重二重線、t=三重線、dt=二重三重線、q=四重線、p=五重線、m=多重線。
数平均分子量(Mn)および分子量分布はGPC(Gel permeation chromatography)を使って測定した。5mLバイアル(vial)に実施例または比較例のブロック共重合体またはマクロ開始剤などの分析対象物を入れ、約1mg/mL程度の濃度になるようにTHF(tetrahydro furan)に希釈する。その後、Calibration用標準試料と分析しようとする試料をsyringe filter(pore size:0.45μm)を通じて濾過させた後測定した。分析プログラムはAgilent technologies社のChemStationを使用し、試料のelution timeをcalibration curveと比較して重量平均分子量(Mw)および数平均分子量(Mn)をそれぞれ求め、その比率(Mw/Mn)で分子量分布(PDI)を計算した。GPCの測定条件は下記の通りである。
機器:Agilent technologies社の1200 series
カラム:Polymer laboratories社のPLgel mixed B 2個使用
溶媒:THF
カラム温度:35℃
サンプル濃度:1mg/mL,200L注入
標準試料:ポリスチレン(Mp:3900000、723000、316500、52200、31400、7200、3940、485)
数式1に適用される各変数であるD、M、KおよびLはそれぞれ下記の方式で求めることができる。
下記の化学式Aの化合物(DPM−C12)は次の方式で合成した。250mLのフラスコにヒドロキノン(hydroquinone)(10.0g、94.2mmol)および1−ブロモドデカン(1−Bromododecane)(23.5g、94.2mmol)を入れ,100mLのアセトニトリル(acetonitrile)に溶かした後過量のポタシウムカーボネート(potassium carbonate)を添加し、75oCで約48時間の間窒素条件下で反応させた。反応後残存するポタシウムカーボネートをフィルタリングして除去し、反応に使ったアセトニトリルも除去した。これにDCM(dichloromethane)と水の混合溶媒を添加してウォークアップし、分離した有機層を集めてmgSO4に通過させて脱水した。引き続き、カラムクロマトグラフィーでDCM(dichloromethane)を使って白色固体相の目的物(4−ドデシルオキシフェノール)(9.8g、35.2mmol)を約37%の収得率で得た。
1H−NMR(CDCl3):d6.77(dd、4H);d4.45(s、1H);d3.89(t、2H);d1.75(p、2H);d1.43(p、2H);d1.33−1.26(m、16H);d0.88(t、3H)。
1H−NMR(CDCl3):d7.02(dd、2H);d6.89(dd、2H);d6.32(dt、1H);d5.73(dt、1H);d3.94(t、2H);d2.05(dd、3H);d1.76(p、2H);d1.43(p、2H);1.34−1.27(m、16H);d0.88(t、3H)。
製造例1の単量体(A)5.0gとRAFT(Reversible Addition Fragmentation chain Transfer)試薬(シアノイソプロチルジチオベンゾエート)165mg、ラジカル開始剤であるAIBN(Azobisisobutyronitrile)79mgおよびアニソール11.9mLを25mL Schlenk flaskに入れて窒素雰囲気下で常温で30分の間撹はんした後、70℃で4時間の間RAFT(Reversible Addition Fragmentation chain Transfer)重合反応を遂行した。重合後反応溶液を抽出溶媒であるメタノール250mLに沈殿させた後、減圧濾過して乾燥させ、桃色のマクロ開始剤を製造した。前記マクロ開始剤の収得率は約57.0重量%であり、数平均分子量(Mn)および分子量分布(Mw/Mn)はそれぞれ10300および1.21であった。
製造例1の単量体(A)5.0gとRAFT(Reversible Addition Fragmentation chain Transfer)試薬であるシアノイソプロチルジチオベンゾエート106.5mg、ラジカル開始剤であるAIBN(Azobisisobutyronitrile)79mgおよびアニソール11.9mLを25mL Schlenk flaskに入れて窒素雰囲気下で常温で30分の間撹はんした後、70℃で4時間の間RAFT(Reversible Addition Fragmentation chain Transfer)重合反応を遂行した。重合後反応溶液を抽出溶媒であるメタノール250mLに沈殿させた後、減圧濾過して乾燥させ、桃色のマクロ開始剤を製造した。前記マクロ開始剤の収得率は約57.0重量%であり、数平均分子量(Mn)および分子量分布(Mw/Mn)はそれぞれ10,400および1.19であった。マクロ開始剤0.3g、ペンタフルオロスチレン単量体3.3gおよびベンゼン1.2mLを10mL Schlenk flaskに入れて窒素雰囲気下で常温で30分の間撹はんした後、115℃で4時間の間RAFT(Reversible Addition Fragmentation chain Transfer)重合反応を遂行した。重合後反応溶液を抽出溶媒であるメタノール250mLに沈殿させた後、減圧濾過して乾燥させて薄桃色のブロック共重合体を製造した。前記ブロック共重合体の収得率は約18重量%であり、数平均分子量(Mn)および分子量分布(Mw/Mn)はそれぞれ17、800および1.14であった。前記ブロック共重合体は製造例1の単量体(A)から由来した第1ブロックと前記ペンタフルオロスチレン単量体から由来した第2ブロックを含む。実施例2のブロック共重合体の1HNMRの分析結果は図2に記載した。
製造例1の単量体(A)5.0gとRAFT(Reversible Addition Fragmentation chain Transfer)試薬であるシアノイソプロチルジチオベンゾエート456mg、ラジカル開始剤であるAIBN(Azobisisobutyronitrile)34mgおよびアニソール12.8mLを25mL Schlenk flaskに入れて窒素雰囲気下で常温で30分の間撹はんした後、70℃で4時間の間RAFT(Reversible Addition Fragmentation chain Transfer)重合反応を遂行した。重合後反応溶液を抽出溶媒であるメタノール250mLに沈殿させた後、減圧濾過して乾燥させ、桃色のマクロ開始剤を製造した。前記マクロ開始剤の収得率は約60.0重量%であり、数平均分子量(Mn)および分子量分布(Mw/Mn)はそれぞれ5,700および1.18であった。マクロ開始剤0.2g、ペンタフルオロスチレン単量体3.4gおよびアニソール1.2mLを10mL Schlenk flaskに入れて窒素雰囲気下で常温で30分の間撹はんした後、115℃で15時間の間RAFT(Reversible Addition Fragmentation chain Transfer)重合反応を遂行した。重合後反応溶液を抽出溶媒であるメタノール250mLに沈殿させた後、減圧濾過して乾燥させて薄桃色のブロック共重合体を製造した。前記ブロック共重合体の収得率は約16重量%であり、数平均分子量(Mn)および分子量分布(Mw/Mn)はそれぞれ59,000および1.22であった。前記ブロック共重合体は製造例1の単量体(A)から由来した第1ブロックと前記ペンタフルオロスチレン単量体から由来した第2ブロックを含む。実施例3のブロック共重合体の1HNMRの分析結果は図3に記載した。
製造例1の単量体(A)5.0gとRAFT(Reversible Addition Fragmentation chain Transfer)試薬であるシアノイソプロチルジチオベンゾエート106.5mg、ラジカル開始剤であるAIBN(Azobisisobutyronitrile)79mgおよびアニソール11.9mLを25mL Schlenk flaskに入れて窒素雰囲気下で常温で30分の間撹はんした後、70℃で4時間の間RAFT(Reversible Addition Fragmentation chain Transfer)重合反応を遂行した。重合後反応溶液を抽出溶媒であるメタノール250mLに沈殿させた後、減圧濾過して乾燥させ、黄色のマクロ開始剤を製造した。前記マクロ開始剤の収得率は約52.0重量%であり、数平均分子量(Mn)および分子量分布(Mw/Mn)はそれぞれ9,100および1.20であった。マクロ開始剤0.5g、ペンタフルオロスチレン単量体4.5gおよびアニソール1.7mLを10mL Schlenk flaskに入れて窒素雰囲気下で常温で30分の間撹はんした後、115℃で4時間の間RAFT(Reversible Addition Fragmentation chain Transfer)重合反応を遂行した。重合後反応溶液を抽出溶媒であるメタノール250mLに沈殿させた後、減圧濾過して乾燥させて淡い黄色のブロック共重合体を製造した。前記ブロック共重合体の収得率は約15重量%であり、数平均分子量(Mn)および分子量分布(Mw/Mn)はそれぞれ23,200および1.12であった。前記ブロック共重合体は製造例1の単量体(A)から由来した第1ブロックと前記ペンタフルオロスチレン単量体から由来した第2ブロックを含む。比較例1のブロック共重合体の1HNMRの分析結果は図4に記載した。
実施例または比較例のブロック共重合体をフルオロベンゼン(fluorobezene)に0.7重量%の固形分濃度に希釈させて製造したコート液をシリコンウェハ上に約5nmの厚さでスピンコート(コート面積:横×縦=1.5cm×1.5cm)し、常温で約1時間の間乾燥させた後、さらに約160℃の温度で約1時間の間熱的熟成(thermal annealing)して自己組織化された膜を形成した。形成された膜に対してSEM(Scanning electron microscope)イメージを撮影した。図5は実施例1に対して撮影したAFMイメージであり、図6は、実施例2に対して撮影したSEMイメージである。図面から確認されるように実施例のブロック共重合体の場合、シリンダー構造の高分子膜が効果的に形成されたし、実施例3の場合もやはりシリンダー構造の高分子膜が形成された。これに対して比較例1の場合、シリンダー構造に適切な相分離が誘導されなかった。図7は、比較例1に対するSEM結果であり、これから効果的なシリンダー構造の相分離が誘導されなかったことを確認することができる。
Claims (10)
- 側鎖を有する第1ブロックと前記第1ブロックとは異なる第2ブロックを含み、
下記の数式1によるXの範囲が2.5〜10であり、
前記第1ブロックは、前記側鎖が連結されている、ハロゲン原子を含まない芳香族構造を含み、前記第2ブロックはハロゲン原子を含む芳香族構造を含み、
前記側鎖は8個以上の鎖形成原子を有する炭化水素鎖であり、前記鎖形成原子は、炭素原子であり、前記第1ブロックは、下記の化学式1で表示される単位を含むブロックであり、前記第2ブロックは、下記の化学式3で表示される単位を含むブロックである、ブロック共重合体:
[数式1]
X=1+(D×M)/(K×L)
数式1でDは第1ブロックの密度(D1)と第2ブロックの密度(D2)の比率(D2/D1)であり、Mは、第1ブロックの繰返し単位のモル質量(M1)と第2ブロックの繰返し単位のモル質量(M2)の比率(M1/M2)であり、Kは1H−NMRで第2ブロックに起因して現れるピークの面積(A2)と第1ブロックに起因して現れるピークの面積(A1)の比率(A2/A1)であり、Lは第1ブロックの繰返し単位1モルが有する水素原子の数(H1)と第2ブロックの繰返し単位1モルが有する水素原子の数(H2)の比率(H1/H2)である;
- 側鎖を有する第1ブロックおよび前記第1ブロックとは異なる第2ブロックを含み、
下記の数式1によるXの範囲が1.1〜1.7であり、
前記第1ブロックは、前記側鎖が連結されている、ハロゲン原子を含まない芳香族構造を含み、前記第2ブロックはハロゲン原子を含む芳香族構造を含み、
前記側鎖は8個以上の鎖形成原子を有する炭化水素鎖であり、前記鎖形成原子は、炭素原子であり、前記第1ブロックは、下記の化学式1で表示される単位を含むブロックであり、前記第2ブロックは、下記の化学式3で表示される単位を含むブロックである、ブロック共重合体:
[数式1]
X=1+(D×M)/(K×L)
数式1でDは第1ブロックの密度(D1)と第2ブロックの密度(D2)の比率(D2/D1)であり、Mは、第1ブロックの繰返し単位のモル質量(M1)と第2ブロックの繰返し単位のモル質量(M2)の比率(M1/M2)であり、Kは1H−NMRで第2ブロックに起因して現れるピークの面積(A2)と第1ブロックに起因して現れるピークの面積(A1)の比率(A2/A1)であり、Lは第1ブロックの繰返し単位1モルが有する水素原子の数(H1)と第2ブロックの繰返し単位1モルが有する水素原子の数(H2)の比率(H1/H2)である;
- シリンダー構造を形成する、請求項1または請求項2に記載のブロック共重合体。
- 前記側鎖は、前記芳香族構造に酸素原子または窒素原子を媒介として連結されている、請求項1または請求項2に記載のブロック共重合体。
- 前記側鎖の鎖形成原子は9個以上である、請求項1または請求項2に記載のブロック共重合体。
- 数平均分子量が3,000〜300,000の範囲内にある、請求項1または請求項2に記載のブロック共重合体。
- 分散度(Mw/Mn)が1.01〜1.60の範囲内にある、請求項1または請求項2に記載のブロック共重合体。
- 自己組織化された請求項1または請求項2に記載のブロック共重合体を含む、高分子膜。
- 自己組織化された請求項1または請求項2に記載のブロック共重合体を含む高分子膜を基板上に形成することを含む、高分子膜の形成方法。
- 基板の表面に形成されている自己組織化された請求項1または請求項2に記載のブロック共重合体を含む高分子膜から前記ブロック共重合体の第1または第2ブロックを除去する段階を含む、パターン形成方法。
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Application Number | Priority Date | Filing Date | Title |
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KR20140131964 | 2014-09-30 | ||
KR10-2014-0131964 | 2014-09-30 | ||
KR10-2014-0175410 | 2014-12-08 | ||
KR10-2014-0175411 | 2014-12-08 | ||
KR1020140175412A KR101768291B1 (ko) | 2013-12-06 | 2014-12-08 | 블록 공중합체 |
KR1020140175400A KR101780097B1 (ko) | 2013-12-06 | 2014-12-08 | 블록 공중합체 |
KR10-2014-0175414 | 2014-12-08 | ||
KR1020140175410A KR101768290B1 (ko) | 2013-12-06 | 2014-12-08 | 블록 공중합체 |
KR1020140175406A KR101780098B1 (ko) | 2013-12-06 | 2014-12-08 | 블록 공중합체 |
KR10-2014-0175415 | 2014-12-08 | ||
KR10-2014-0175402 | 2014-12-08 | ||
KR1020140175402A KR101832025B1 (ko) | 2013-12-06 | 2014-12-08 | 단량체 및 블록 공중합체 |
KR1020140175415A KR101780101B1 (ko) | 2013-12-06 | 2014-12-08 | 블록 공중합체 |
KR10-2014-0175413 | 2014-12-08 | ||
KR1020140175401A KR101763008B1 (ko) | 2013-12-06 | 2014-12-08 | 블록 공중합체 |
KR1020140175414A KR101780100B1 (ko) | 2013-12-06 | 2014-12-08 | 블록 공중합체 |
KR10-2014-0175406 | 2014-12-08 | ||
KR10-2014-0175407 | 2014-12-08 | ||
KR10-2014-0175412 | 2014-12-08 | ||
KR1020140175413A KR101780099B1 (ko) | 2013-12-06 | 2014-12-08 | 블록 공중합체 |
KR1020140175407A KR101763010B1 (ko) | 2013-12-06 | 2014-12-08 | 블록 공중합체 |
KR10-2014-0175401 | 2014-12-08 | ||
KR1020140175411A KR101762487B1 (ko) | 2013-12-06 | 2014-12-08 | 블록 공중합체 |
KR10-2014-0175400 | 2014-12-08 | ||
KR10-2015-0079486 | 2015-06-04 | ||
KR1020150079486A KR101781685B1 (ko) | 2014-09-30 | 2015-06-04 | 블록 공중합체 |
PCT/KR2015/010327 WO2016053005A1 (ko) | 2014-09-30 | 2015-09-30 | 블록 공중합체 |
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Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3078695B1 (en) | 2013-12-06 | 2020-11-04 | LG Chem, Ltd. | Block copolymer |
US10081698B2 (en) | 2013-12-06 | 2018-09-25 | Lg Chem, Ltd. | Block copolymer |
JP6483693B2 (ja) | 2013-12-06 | 2019-03-13 | エルジー・ケム・リミテッド | ブロック共重合体 |
JP6402867B2 (ja) | 2013-12-06 | 2018-10-10 | エルジー・ケム・リミテッド | ブロック共重合体 |
JP6361893B2 (ja) | 2013-12-06 | 2018-07-25 | エルジー・ケム・リミテッド | ブロック共重合体 |
WO2015084129A1 (ko) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | 블록 공중합체 |
JP6419820B2 (ja) | 2013-12-06 | 2018-11-07 | エルジー・ケム・リミテッド | ブロック共重合体 |
US10150832B2 (en) | 2013-12-06 | 2018-12-11 | Lg Chem, Ltd. | Block copolymer |
WO2015084123A1 (ko) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | 블록 공중합체 |
US10202480B2 (en) * | 2013-12-06 | 2019-02-12 | Lg Chem, Ltd. | Block copolymer |
EP3078687B1 (en) | 2013-12-06 | 2020-06-03 | LG Chem, Ltd. | Block copolymer |
EP3078688B1 (en) | 2013-12-06 | 2020-03-04 | LG Chem, Ltd. | Block copolymer |
EP3078692B1 (en) * | 2013-12-06 | 2021-01-27 | LG Chem, Ltd. | Block copolymer |
EP3078654B1 (en) | 2013-12-06 | 2021-07-07 | LG Chem, Ltd. | Monomer and block copolymer |
CN107075052B (zh) | 2014-09-30 | 2020-05-29 | 株式会社Lg化学 | 嵌段共聚物 |
EP3202802B1 (en) * | 2014-09-30 | 2022-11-23 | LG Chem, Ltd. | Block copolymer |
EP3214102B1 (en) | 2014-09-30 | 2022-01-05 | LG Chem, Ltd. | Block copolymer |
WO2016052999A1 (ko) | 2014-09-30 | 2016-04-07 | 주식회사 엘지화학 | 블록 공중합체 |
EP3202797B1 (en) | 2014-09-30 | 2021-07-07 | LG Chem, Ltd. | Block copolymer |
US10295908B2 (en) | 2014-09-30 | 2019-05-21 | Lg Chem, Ltd. | Block copolymer |
JP6538158B2 (ja) | 2014-09-30 | 2019-07-03 | エルジー・ケム・リミテッド | ブロック共重合体 |
US10370529B2 (en) | 2014-09-30 | 2019-08-06 | Lg Chem, Ltd. | Method of manufacturing patterned substrate |
EP3202801B1 (en) | 2014-09-30 | 2021-08-18 | LG Chem, Ltd. | Block copolymer |
CN107078026B (zh) | 2014-09-30 | 2020-03-27 | 株式会社Lg化学 | 图案化基底的制备方法 |
KR102088444B1 (ko) * | 2016-11-30 | 2020-03-12 | 주식회사 엘지화학 | 고분자 조성물 |
JP7027674B2 (ja) * | 2017-09-13 | 2022-03-02 | エルジー・ケム・リミテッド | パターン化基板の製造方法 |
Family Cites Families (144)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL112461C (ja) | 1958-03-13 | |||
US3976672A (en) | 1974-12-26 | 1976-08-24 | Uniroyal Inc. | (Hydrocarbylphenylsulfonyl)alkyltrimethylstannanes |
KR940000789B1 (ko) | 1987-10-08 | 1994-01-31 | 이데미쓰 고산 가부시끼가이샤 | 스티렌계 중합체 및 그 제조방법 |
JPH01260360A (ja) | 1988-04-12 | 1989-10-17 | Nippon Oil & Fats Co Ltd | 逆相クロマトグラフィー用充填剤 |
US5115056A (en) | 1989-06-20 | 1992-05-19 | Ciba-Geigy Corporation | Fluorine and/or silicone containing poly(alkylene-oxide)-block copolymers and contact lenses thereof |
DE69119889T2 (de) | 1990-11-21 | 1996-10-02 | Idemitsu Kosan Co | Styrol-copolymer und seine herstellung |
US5234604A (en) | 1991-02-26 | 1993-08-10 | Betz Laboratories, Inc. | Water soluble block copolymers and methods of use therof |
JP3121116B2 (ja) * | 1992-05-21 | 2000-12-25 | 出光興産株式会社 | スチレン系ブロック共重合体及びその製造方法 |
JPH0665333A (ja) | 1992-08-21 | 1994-03-08 | Shin Etsu Chem Co Ltd | 単分散性共重合体及びその製造方法 |
US5728431A (en) | 1996-09-20 | 1998-03-17 | Texas A&M University System | Process for forming self-assembled polymer layers on a metal surface |
JP3392687B2 (ja) | 1997-02-21 | 2003-03-31 | 信越化学工業株式会社 | ブロック−グラフト共重合体およびこれを用いて作製した高分子固体電解質 |
US5783614A (en) | 1997-02-21 | 1998-07-21 | Copytele, Inc. | Polymeric-coated dielectric particles and formulation and method for preparing same |
JP3396390B2 (ja) | 1997-03-04 | 2003-04-14 | 信越化学工業株式会社 | ブロック−グラフト共重合体およびこれを用いて作製した自己架橋型高分子固体電解質並びにその製造方法 |
JP3569612B2 (ja) | 1997-07-25 | 2004-09-22 | 信越化学工業株式会社 | ブロック−グラフト共重合体およびこれを用いて作製した自己架橋型高分子固体電解質ならびにその製造方法 |
CA2265345A1 (en) | 1998-03-25 | 1999-09-25 | The Lubrizol Corporation | Vinyl aromatic-(vinyl aromatic-co-acrylic) block copolymers prepared by stabilized free radical polymerization |
JP4132265B2 (ja) | 1998-08-04 | 2008-08-13 | 株式会社クラレ | ブロック共重合体およびその成形品 |
MXPA01006557A (es) | 1998-12-30 | 2002-08-12 | Noveon Ip Holdings Corp | Copolimeros ramificados/de bloque para tratamiento de sustratos keratinosos. |
WO2000040630A1 (en) | 1998-12-31 | 2000-07-13 | Ciba Specialty Chemicals Holding Inc. | Pigment composition containing atrp polymers |
JP4458213B2 (ja) | 1999-01-29 | 2010-04-28 | 信越化学工業株式会社 | 架橋型高分子固体電解質の製造方法 |
JP4288440B2 (ja) | 1999-01-29 | 2009-07-01 | 信越化学工業株式会社 | 架橋型高分子固体電解質の製造方法 |
JP2000300682A (ja) | 1999-04-23 | 2000-10-31 | Hisamitsu Pharmaceut Co Inc | イオントフォレーシス用デバイス |
US6314225B1 (en) | 1999-11-23 | 2001-11-06 | Corning Incorporated | Halogen and perhalo-organo substituted N-phenyl (or biphenyl) maleimide |
JP2001294617A (ja) | 2000-04-12 | 2001-10-23 | Shin Etsu Chem Co Ltd | プロトン導電性高分子電解質 |
FR2809829B1 (fr) | 2000-06-05 | 2002-07-26 | Rhodia Chimie Sa | Nouvelle composition photosensible pour la fabrication de photoresist |
JP4625901B2 (ja) | 2000-11-08 | 2011-02-02 | 独立行政法人産業技術総合研究所 | シンジオタクチック芳香族ビニル系ブロック共重合体およびその製造方法 |
KR100425243B1 (ko) | 2001-11-14 | 2004-03-30 | 주식회사 엘지화학 | 선형의 블록 공중합체의 제조방법 |
US20030143343A1 (en) | 2001-12-19 | 2003-07-31 | Fuji Photo Film Co., Ltd. | Wall-structured body and process for manufacturing the same |
US8362151B2 (en) | 2002-05-31 | 2013-01-29 | Elsicon, Inc. | Hybrid polymer materials for liquid crystal alignment layers |
JP2004026688A (ja) | 2002-06-24 | 2004-01-29 | Asahi Glass Co Ltd | ポリフルオロアルキル基含有重合性化合物およびその重合体 |
AU2003242731A1 (en) | 2002-07-01 | 2004-01-19 | Merck Patent Gmbh | Polymerizable, luminescent compounds and mixtures, luminescent polymer materials and their use |
CA2489168A1 (en) | 2002-07-03 | 2004-01-15 | The Procter & Gamble Company | Radiation curable low stress relaxation elastomeric materials |
US7750059B2 (en) | 2002-12-04 | 2010-07-06 | Hewlett-Packard Development Company, L.P. | Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure |
JP4147143B2 (ja) | 2003-04-28 | 2008-09-10 | 電気化学工業株式会社 | ブロック共重合体及び樹脂組成物 |
JP4300902B2 (ja) | 2003-06-23 | 2009-07-22 | コニカミノルタホールディングス株式会社 | ブロック共重合体、有機エレクトロルミネッセンス素子、表示装置、照明装置及び光源 |
JP2005097442A (ja) | 2003-09-25 | 2005-04-14 | Ube Ind Ltd | パターン表面とその製造方法 |
JP4453814B2 (ja) | 2003-11-12 | 2010-04-21 | Jsr株式会社 | 重合性化合物および混合物ならびに液晶表示素子の製造方法 |
US8061533B2 (en) | 2004-03-19 | 2011-11-22 | University Of Tennessee Research Foundation | Materials comprising polydienes and hydrophilic polymers and related methods |
JP2007070453A (ja) | 2005-09-06 | 2007-03-22 | Nippon Soda Co Ltd | ブロック共重合体の製造方法 |
JP5014605B2 (ja) | 2005-09-14 | 2012-08-29 | ライオン株式会社 | 易洗浄性皮膜形成用組成物 |
JP5082101B2 (ja) | 2005-11-14 | 2012-11-28 | 国立大学法人東京工業大学 | ナノポーラス基板の製造方法 |
US7538159B2 (en) | 2005-12-16 | 2009-05-26 | Bridgestone Corporation | Nanoparticles with controlled architecture and method thereof |
US20070166648A1 (en) | 2006-01-17 | 2007-07-19 | International Business Machines Corporation | Integrated lithography and etch for dual damascene structures |
JP2007246600A (ja) | 2006-03-14 | 2007-09-27 | Shin Etsu Chem Co Ltd | 自己組織化高分子膜材料、自己組織化パターン、及びパターン形成方法 |
WO2007132901A1 (ja) | 2006-05-16 | 2007-11-22 | Nippon Soda Co., Ltd. | ブロックコポリマー |
JP5340530B2 (ja) | 2006-09-01 | 2013-11-13 | リンテック株式会社 | ミクロ相分離構造物の製造方法 |
DE112006004092T5 (de) | 2006-10-23 | 2009-08-13 | Cynthia Trempel Batchelder | Vorrichtung und Verfahren zum Messen von Oberflächenenergien |
KR100810682B1 (ko) | 2006-11-08 | 2008-03-07 | 제일모직주식회사 | 전도성 고분자 중합체, 전도성 고분자 공중합체 조성물,전도성 고분자 공중합체 조성물막, 및 이를 이용한 유기광전 소자 |
US7964107B2 (en) | 2007-02-08 | 2011-06-21 | Micron Technology, Inc. | Methods using block copolymer self-assembly for sub-lithographic patterning |
JP5546719B2 (ja) | 2007-03-28 | 2014-07-09 | 日東電工株式会社 | ミクロ相分離構造を有する高分子体の製造方法ならびにミクロ相分離構造を有する高分子体 |
US8097175B2 (en) | 2008-10-28 | 2012-01-17 | Micron Technology, Inc. | Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure |
US8168213B2 (en) | 2007-05-15 | 2012-05-01 | Boston Scientific Scimed, Inc. | Medical devices having coating with improved adhesion |
JP5332052B2 (ja) | 2007-06-01 | 2013-11-06 | シャープ株式会社 | レジスト除去方法、半導体製造方法、及びレジスト除去装置 |
US8147914B2 (en) | 2007-06-12 | 2012-04-03 | Massachusetts Institute Of Technology | Orientation-controlled self-assembled nanolithography using a block copolymer |
US8714088B2 (en) | 2007-06-21 | 2014-05-06 | Fujifilm Corporation | Lithographic printing plate precursor and lithographic printing method |
KR101512497B1 (ko) | 2007-07-06 | 2015-04-16 | 마루젠 세끼유가가꾸 가부시키가이샤 | Aba형 삼중블록 공중합체 및 그 제조방법 |
KR101291223B1 (ko) | 2007-08-09 | 2013-07-31 | 한국과학기술원 | 블록 공중합체를 이용한 미세 패턴 형성 방법 |
JP4403238B2 (ja) | 2007-09-03 | 2010-01-27 | 国立大学法人東京工業大学 | ミクロ相分離構造膜、及びその製造方法 |
JP5081560B2 (ja) | 2007-09-28 | 2012-11-28 | 富士フイルム株式会社 | ポジ型レジスト組成物およびこれを用いたパターン形成方法 |
CN101215362B (zh) | 2008-01-08 | 2010-08-25 | 厦门大学 | 一种具有低表面能的硅丙三嵌段共聚物及其制备方法 |
JP2009203439A (ja) | 2008-02-29 | 2009-09-10 | Mitsubishi Electric Corp | ブロック共重合体、ブロック共重合体組成物及びそれを含有する絶縁シート |
US8425982B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
KR100935863B1 (ko) * | 2008-07-02 | 2010-01-07 | 연세대학교 산학협력단 | 용매 어닐링과 디웨팅을 이용한 블록공중합체의 나노구조의패턴화방법 |
US8211737B2 (en) | 2008-09-19 | 2012-07-03 | The University Of Massachusetts | Method of producing nanopatterned articles, and articles produced thereby |
US8518837B2 (en) | 2008-09-25 | 2013-08-27 | The University Of Massachusetts | Method of producing nanopatterned articles using surface-reconstructed block copolymer films |
US8658258B2 (en) | 2008-10-21 | 2014-02-25 | Aculon, Inc. | Plasma treatment of substrates prior to the formation a self-assembled monolayer |
JP2010115832A (ja) | 2008-11-12 | 2010-05-27 | Panasonic Corp | ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法 |
JP2010145158A (ja) | 2008-12-17 | 2010-07-01 | Dainippon Printing Co Ltd | ミクロ相分離構造の確認方法 |
EP2199854B1 (en) | 2008-12-19 | 2015-12-16 | Obducat AB | Hybrid polymer mold for nano-imprinting and method for making the same |
KR101212672B1 (ko) | 2008-12-26 | 2012-12-14 | 제일모직주식회사 | 전도성 고분자, 전도성 고분자 조성물, 전도성 고분자 유기막 및 이를 포함하는 유기발광소자 |
JP5399098B2 (ja) | 2009-03-02 | 2014-01-29 | 東ソー株式会社 | ブロック共重合体及びその製造方法 |
CN101492520A (zh) | 2009-03-04 | 2009-07-29 | 中国科学院上海有机化学研究所 | 含有全氟环丁基芳基醚嵌段的两嵌段聚合物、制备方法及用途 |
JP5170456B2 (ja) | 2009-04-16 | 2013-03-27 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
KR101101767B1 (ko) | 2009-05-07 | 2012-01-05 | 한국과학기술원 | 코일―빗형 블록 공중합체 및 이를 이용한 나노 구조체의 제조방법 |
JP5679253B2 (ja) | 2009-05-26 | 2015-03-04 | 国立大学法人東京工業大学 | 自立性高分子薄膜 |
KR20110018678A (ko) | 2009-08-18 | 2011-02-24 | 연세대학교 산학협력단 | 기능성 말단기를 가진 폴리스티렌을 이용한 실린더 나노구조체의 수직배향 조절법 |
EP2330136B1 (en) | 2009-12-07 | 2013-08-28 | Borealis AG | Process for the preparation of an unsupported, solid metallocene catalyst system and its use in polymerization of olefins |
KR101305052B1 (ko) | 2010-02-25 | 2013-09-11 | 이화여자대학교 산학협력단 | 자기 조립 이중블록 공중합체와 졸-겔 공정을 이용한 산화아연 나노링 구조체의 제조방법 |
KR101238827B1 (ko) | 2010-03-12 | 2013-03-04 | 한국과학기술원 | 열안전성이 우수한 코어쉘 구조의 나노 입자 블록공중합체 복합체의 제조 방법 및 이에 의하여 제조된 열안전성이 우수한 코어쉘 구조의 나노 입자 블록공중합체 복합체 |
KR20110112501A (ko) | 2010-04-07 | 2011-10-13 | 한국과학기술원 | 높은 종횡비를 가지는 나노구조물 제조용 블록공중합체 및 그 제조방법 |
JP5505371B2 (ja) | 2010-06-01 | 2014-05-28 | 信越化学工業株式会社 | 高分子化合物、化学増幅ポジ型レジスト材料、及びパターン形成方法 |
JP5598970B2 (ja) | 2010-06-18 | 2014-10-01 | 凸版印刷株式会社 | 微細構造体の製造方法、複合体 |
KR101290057B1 (ko) | 2010-07-19 | 2013-07-26 | 주식회사 엘지화학 | 코팅성과 재코팅성이 우수한 열경화성 보호막 조성물 |
US8541162B2 (en) | 2010-09-01 | 2013-09-24 | E I Du Pont De Nemours And Company | High resolution, solvent resistant, thin elastomeric printing plates |
JP2012093699A (ja) | 2010-09-30 | 2012-05-17 | Canon Inc | エレクトロクロミック素子 |
JP5254381B2 (ja) | 2011-02-23 | 2013-08-07 | 株式会社東芝 | パターン形成方法 |
CN102172491B (zh) | 2011-03-09 | 2014-09-03 | 无锡市恒创嘉业纳米材料科技有限公司 | 一种含氟表面活性剂及其制备方法 |
CN103562245B (zh) * | 2011-04-22 | 2015-11-25 | Lg化学株式会社 | 新的二嵌段共聚物、其制备方法以及使用其形成纳米图案的方法 |
TW201323461A (zh) | 2011-09-06 | 2013-06-16 | Univ Cornell | 嵌段共聚物及利用彼等之蝕印圖案化 |
KR101999870B1 (ko) | 2011-09-15 | 2019-10-02 | 위스콘신 얼럼나이 리서어치 화운데이션 | 화학적으로 패턴화된 표면과 제2 표면 사이의 블록 공중합체 막의 유도 조립 |
US8691925B2 (en) | 2011-09-23 | 2014-04-08 | Az Electronic Materials (Luxembourg) S.A.R.L. | Compositions of neutral layer for directed self assembly block copolymers and processes thereof |
JP5795221B2 (ja) | 2011-09-26 | 2015-10-14 | 株式会社東芝 | パターン形成方法 |
JP5994788B2 (ja) | 2011-11-09 | 2016-09-21 | Jsr株式会社 | パターン形成用自己組織化組成物及びパターン形成方法 |
JP6019524B2 (ja) | 2011-12-09 | 2016-11-02 | 国立大学法人九州大学 | 生体適合性材料、医療用具及び生体適合性材料の製造方法 |
US8697810B2 (en) | 2012-02-10 | 2014-04-15 | Rohm And Haas Electronic Materials Llc | Block copolymer and methods relating thereto |
US20150004379A1 (en) | 2012-02-10 | 2015-01-01 | E I Du Pont Nemours And Company | Preparation, purification and use of high-x diblock copolymers |
US20130209755A1 (en) | 2012-02-15 | 2013-08-15 | Phillip Dene Hustad | Self-assembled structures, method of manufacture thereof and articles comprising the same |
JP6118573B2 (ja) | 2012-03-14 | 2017-04-19 | 東京応化工業株式会社 | 下地剤、ブロックコポリマーを含む層のパターン形成方法 |
JP2013219334A (ja) | 2012-03-16 | 2013-10-24 | Jx Nippon Oil & Energy Corp | フィルム状モールドを用いた基板の製造方法及び製造装置 |
KR101891761B1 (ko) | 2012-04-06 | 2018-08-24 | 주식회사 동진쎄미켐 | 가이드 패턴 형성용 포토레지스트 조성물 및 이를 이용한 미세패턴 형성방법 |
EP2839341B1 (en) | 2012-04-16 | 2020-01-15 | Brewer Science, Inc. | Method for directed self-assembly |
US9250528B2 (en) | 2012-04-27 | 2016-02-02 | Asml Netherlands B.V. | Methods and compositions for providing spaced lithography features on a substrate by self-assembly of block copolymers |
JP5710546B2 (ja) | 2012-04-27 | 2015-04-30 | 信越化学工業株式会社 | パターン形成方法 |
US9127113B2 (en) | 2012-05-16 | 2015-09-08 | Rohm And Haas Electronic Materials Llc | Polystyrene-polyacrylate block copolymers, methods of manufacture thereof and articles comprising the same |
JP2014012807A (ja) * | 2012-06-05 | 2014-01-23 | Asahi Kasei E-Materials Corp | パターン形成用樹脂組成物及びパターン形成方法 |
KR101529646B1 (ko) | 2012-09-10 | 2015-06-17 | 주식회사 엘지화학 | 실리콘 옥사이드의 나노 패턴 형성 방법, 금속 나노 패턴의 형성 방법 및 이를 이용한 정보저장용 자기 기록 매체 |
JP5887244B2 (ja) | 2012-09-28 | 2016-03-16 | 富士フイルム株式会社 | パターン形成用自己組織化組成物、それを用いたブロックコポリマーの自己組織化によるパターン形成方法、及び自己組織化パターン、並びに電子デバイスの製造方法 |
US9223214B2 (en) | 2012-11-19 | 2015-12-29 | The Texas A&M University System | Self-assembled structures, method of manufacture thereof and articles comprising the same |
CN102967918B (zh) | 2012-12-05 | 2014-12-31 | 河海大学常州校区 | 新型太阳能聚光碟片 |
CN104684949B (zh) | 2012-12-13 | 2016-12-21 | 东丽先端材料研究开发(中国)有限公司 | 多嵌段共聚物及聚合物电解质 |
CN104995715B (zh) | 2013-02-14 | 2018-06-19 | Asml荷兰有限公司 | 用于通过嵌段共聚物的自组装在衬底上提供间隔的光刻特征的方法 |
JP6027912B2 (ja) * | 2013-02-22 | 2016-11-16 | 東京応化工業株式会社 | 相分離構造を含む構造体の製造方法、及びパターン形成方法、並びにトップコート材料 |
JP6107216B2 (ja) | 2013-02-22 | 2017-04-05 | キヤノンマーケティングジャパン株式会社 | コンピュータ、薬剤分包装置、およびその制御方法とプログラム。 |
JP2015000896A (ja) | 2013-06-14 | 2015-01-05 | 富士フイルム株式会社 | 組成物ならびにそれを用いたミクロ相分離構造膜およびその製造方法 |
US9493593B2 (en) | 2013-06-28 | 2016-11-15 | Lg Chem, Ltd. | Elastic diene terpolymer and preparation method thereof |
US9109067B2 (en) | 2013-09-24 | 2015-08-18 | Xerox Corporation | Blanket materials for indirect printing method with varying surface energies via amphiphilic block copolymers |
EP3078654B1 (en) | 2013-12-06 | 2021-07-07 | LG Chem, Ltd. | Monomer and block copolymer |
US10081698B2 (en) | 2013-12-06 | 2018-09-25 | Lg Chem, Ltd. | Block copolymer |
EP3078695B1 (en) | 2013-12-06 | 2020-11-04 | LG Chem, Ltd. | Block copolymer |
US10202480B2 (en) | 2013-12-06 | 2019-02-12 | Lg Chem, Ltd. | Block copolymer |
TWI532780B (zh) | 2013-12-06 | 2016-05-11 | Lg化學股份有限公司 | 嵌段共聚物 |
EP3078692B1 (en) | 2013-12-06 | 2021-01-27 | LG Chem, Ltd. | Block copolymer |
JP6419820B2 (ja) | 2013-12-06 | 2018-11-07 | エルジー・ケム・リミテッド | ブロック共重合体 |
EP3078687B1 (en) | 2013-12-06 | 2020-06-03 | LG Chem, Ltd. | Block copolymer |
US10150832B2 (en) | 2013-12-06 | 2018-12-11 | Lg Chem, Ltd. | Block copolymer |
JP6483693B2 (ja) | 2013-12-06 | 2019-03-13 | エルジー・ケム・リミテッド | ブロック共重合体 |
WO2015084129A1 (ko) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | 블록 공중합체 |
JP6361893B2 (ja) * | 2013-12-06 | 2018-07-25 | エルジー・ケム・リミテッド | ブロック共重合体 |
KR20160038700A (ko) | 2014-09-30 | 2016-04-07 | 주식회사 엘지화학 | 중성층 조성물 |
EP3078688B1 (en) * | 2013-12-06 | 2020-03-04 | LG Chem, Ltd. | Block copolymer |
WO2015084123A1 (ko) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | 블록 공중합체 |
FR3014888B1 (fr) | 2013-12-13 | 2017-05-26 | Arkema France | Procede permettant la creation de structures nanometriques par l'auto-assemblage de copolymeres a blocs |
KR20150114633A (ko) | 2014-04-01 | 2015-10-13 | 에스케이하이닉스 주식회사 | 반도체 장치 |
JP6538157B2 (ja) | 2014-09-30 | 2019-07-03 | エルジー・ケム・リミテッド | ブロック共重合体 |
EP3202797B1 (en) | 2014-09-30 | 2021-07-07 | LG Chem, Ltd. | Block copolymer |
EP3202801B1 (en) | 2014-09-30 | 2021-08-18 | LG Chem, Ltd. | Block copolymer |
JP6538158B2 (ja) * | 2014-09-30 | 2019-07-03 | エルジー・ケム・リミテッド | ブロック共重合体 |
EP3214102B1 (en) | 2014-09-30 | 2022-01-05 | LG Chem, Ltd. | Block copolymer |
CN107075052B (zh) | 2014-09-30 | 2020-05-29 | 株式会社Lg化学 | 嵌段共聚物 |
US10295908B2 (en) | 2014-09-30 | 2019-05-21 | Lg Chem, Ltd. | Block copolymer |
EP3202802B1 (en) * | 2014-09-30 | 2022-11-23 | LG Chem, Ltd. | Block copolymer |
CN107078026B (zh) | 2014-09-30 | 2020-03-27 | 株式会社Lg化学 | 图案化基底的制备方法 |
WO2016052999A1 (ko) | 2014-09-30 | 2016-04-07 | 주식회사 엘지화학 | 블록 공중합체 |
US10370529B2 (en) | 2014-09-30 | 2019-08-06 | Lg Chem, Ltd. | Method of manufacturing patterned substrate |
KR101946776B1 (ko) | 2015-06-04 | 2019-02-13 | 주식회사 엘지화학 | 중성층 조성물 |
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US10310378B2 (en) | 2019-06-04 |
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