JP5813281B2 - バッチaldリアクタのための処理プロセス - Google Patents
バッチaldリアクタのための処理プロセス Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
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Description
[0001]本発明の実施形態は、一般的には、製造プロセスに関し、より詳細には、基板製造前、基板製造中又は基板製造後のハードウエア又は基板のための処理プロセスに関する。
[0002]他の技術に従い、マイクロエレクトロニクス産業には、原子層分解能による物質の堆積が必要である。約30年前に原子層堆積(ALD)プロセスが開発されて、エレクトロルミネセントフラットパネルディスプレイが製造された。半導体処理、フラットパネルディスプレイ処理又は他の電子デバイス処理の分野において、基板上に物質を堆積させるのに気相堆積プロセスが重要な役割を果たしてきた。電子デバイスの形状が縮小し続け、デバイスの密度が増加し続けるにつれて、特徴部のサイズとアスペクト比はより積極的になっている。先端技術ノード(0.65μm以下)のための製造プロセスの間、特徴部の40nm未満のサイズと30のアスペクト比が所望される。従来の化学気相堆積(CVD)プロセスは0.65μmを超える技術ノードには成功してきたが、積極的なデバイス形状には原子層分解能による膜堆積が必要である。必要とされる膜厚も数原子層厚であり、デバイス形状(例えば、高アスペクト比トレンチ)もCVDプロセスによって堆積された物質を除外する。それ故、ALDプロセスの要求が、ある種の製造プロトコールの間に確認される。
[0051]実施例1-9は、カリフォルニア州、サンタクララにあるApplied Materials Inc.から入手できるALDバッチプロセスチャンバと、共同譲渡された米国特許第6,352,593号と同第6,321,680号に、2003年1月13日出願の“Methodand Appratusfor Layerby LayerDeposition of Thin Films”と称し米国第2003-0134038号として公開された共同譲渡され同時係属中の米国特許出願第10/342,151号に、また、2002年8月9日出願の“HighRate Depositionat LowPressure in a small BatchReactor”と称し米国第2003-0049372号として公開された共同譲渡され同時係属中の米国特許出願第10/216,079号に記載されたミニバッチプロセスチャンバ内で行うことができ、これらの開示内容は堆積プロセスを行う装置を記載するために本明細書に全体で援用されている。
Claims (15)
- プロセスチャンバ内で基板上に物質を形成する方法であって、
プロセスチャンバを、オゾン、窒素、アルゴン、それらのプラズマ、それらの誘導体、及びそれらの組合わせからなる群より選ばれる処理ガスを含む前処理プロセスにさらすステップと;
該プロセスチャンバ内の少なくとも一つの基板をALDプロセスにさらして、該基板に酸化ハフニウム物質を堆積するステップであって、該ALDプロセスは、
ALDサイクル中に該少なくとも一つの基板を連続して少なくとも二つの化学前駆物質にさらす工程であって、該少なくとも二つの化学前駆物質の一つはハロゲン化ハフニウム化合物かハフニウムアミノ化合物である、工程と、
該ALDサイクルを所定数のサイクル繰り返す工程と、
各所定数のサイクル後に中間処理プロセスを行う工程であって、該中間処理プロセスは該プロセスチャンバ又は該少なくとも一つの基板を、窒素、アルゴン、ヘリウム、水素、酸素、オゾン、水、アンモニア、シラン、ジシラン、ジボラン、それらの誘導体、それらのプラズマ、又はそれらの組合わせからなる群より選ばれる中間処理ガスにさらすことを含む、前記工程と、
を含む、前記ステップと;
該プロセスチャンバを後処理プロセスにさらすステップであって、該後処理プロセスは該プロセスチャンバをオゾンと酸素を含む後処理ガスにさらすことを含む、前記ステップと;
を含む、前記方法。 - 該プロセスチャンバがバッチプロセスチャンバである、請求項1に記載の方法。
- 該少なくとも一つの基板が、25以上の基板を含む複数の基板である、請求項2に記載の方法。
- 該複数の基板が100の基板を含む、請求項3に記載の方法。
- プロセスチャンバ内で基板上に物質を形成する方法であって、
バッチプロセスチャンバを、オゾン、窒素、アルゴン、それらのプラズマ、それらの誘導体、及びそれらの組合わせからなる群より選ばれる処理ガスを含む前処理プロセスにさらすステップと;
該バッチプロセスチャンバ内の複数の基板を該基板上に酸化ハフニウム物質を形成するためのALDプロセスにさらすステップであって、該ALDプロセスが、
ALDサイクル中に該基板を連続して第一化学前駆物質と第二化学前駆物質にさらす工程であって、第一化学前駆物質と第二化学前駆物質のいずれかは、ハロゲン化ハフニウム化合物かハフニウムアミノ化合物である、工程と、
該ALDサイクルを繰り返して、所定の厚さを有する該物質の層を形成する工程と、
を含む、前記ステップと;
該ALDプロセス中に少なくとも一つの中間処理プロセスを行うステップであって、該中間処理プロセスは該バッチプロセスチャンバ又は該複数の基板を、窒素、アルゴン、ヘリウム、水素、酸素、オゾン、水、アンモニア、シラン、ジシラン、ジボラン、それらの誘導体、それらのプラズマ、又はそれらの組合わせからなる群より選ばれる中間処理ガスにさらすことを含む、前記ステップと;
該バッチプロセスチャンバを後処理プロセスにさらすステップであって、該後処理プロセスは該バッチプロセスチャンバをオゾンと酸素を含む後処理ガスにさらすことを含む、前記ステップと;
を含む、前記方法。 - 該少なくとも一つの中間処理プロセスが所定数のALDサイクル後に行われる、請求項5に記載の方法。
- 該少なくとも一つの中間処理プロセスと該所定数のALDサイクルが、プロセスサイクル中に繰り返される、請求項6に記載の方法。
- 該プロセスサイクルを繰り返して該物質を形成する、請求項7に記載の方法。
- 該複数の基板が25以上の基板を含む、請求項8に記載の方法。
- 該複数の基板が25以上の基板を含む、請求項5に記載の方法。
- プロセスチャンバ内で基板上に物質を形成する方法であって、
バッチプロセスチャンバを、オゾン、窒素、アルゴン、それらのプラズマ、それらの誘導体、及びそれらの組合わせからなる群より選ばれる処理ガスを含む前処理プロセスにさらすステップと;
該バッチプロセスチャンバ内の複数の基板を該基板上に酸化ハフニウム物質を形成するためのALDプロセスにさらすステップであって、該ALDプロセスが、
ALDサイクル中に該基板を連続して、酸化ガスと、ハロゲン化ハフニウム化合物かハフニウムアミノ化合物からなる群より選ばれるハフニウム前駆物質にさらす工程と、
該ALDサイクルを繰り返して、所定の厚さを有するハフニウム含有層を形成する工程と、
を含む、前記ステップと;
該ALDプロセス中に少なくとも一つの中間処理プロセスを行うステップであって、該中間処理プロセスは該バッチプロセスチャンバ又は該複数の基板を、窒素、アルゴン、ヘリウム、水素、酸素、オゾン、水、アンモニア、シラン、ジシラン、ジボラン、それらの誘導体、それらのプラズマ、又はそれらの組合わせからなる群より選ばれる中間処理ガスにさらすことを含む、前記ステップと;
該バッチプロセスチャンバを後処理プロセスにさらすステップであって、該後処理プロセスは該バッチプロセスチャンバを、オゾンと酸素を含む後処理ガスであって、5原子パーセントから30原子パーセントのオゾン濃度である後処理ガスにさらすことを含む、前記ステップと;
を含む、前記方法。 - 該少なくとも一つの中間処理プロセスが、所定数のALDサイクル後に行われる、請求項11に記載の方法。
- 該少なくとも一つの中間処理プロセスと該所定数のALDサイクルが、プロセスサイクル中に繰り返される、請求項12に記載の方法。
- 該プロセスサイクルを繰り返して該物質を形成する、請求項13に記載の方法。
- 該複数の基板が25以上の基板を含む、請求項11に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/232,455 US20070065578A1 (en) | 2005-09-21 | 2005-09-21 | Treatment processes for a batch ALD reactor |
US11/232,455 | 2005-09-21 | ||
PCT/US2006/036292 WO2007038050A2 (en) | 2005-09-21 | 2006-09-18 | Treatment processes for a batch ald reactor |
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Publication Number | Publication Date |
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JP2009509039A JP2009509039A (ja) | 2009-03-05 |
JP5813281B2 true JP5813281B2 (ja) | 2015-11-17 |
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JP2008531413A Active JP5813281B2 (ja) | 2005-09-21 | 2006-09-18 | バッチaldリアクタのための処理プロセス |
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US (1) | US20070065578A1 (ja) |
JP (1) | JP5813281B2 (ja) |
KR (1) | KR20080050510A (ja) |
CN (1) | CN101553597A (ja) |
TW (1) | TWI426547B (ja) |
WO (1) | WO2007038050A2 (ja) |
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-
2005
- 2005-09-21 US US11/232,455 patent/US20070065578A1/en not_active Abandoned
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2006
- 2006-08-18 KR KR1020087009483A patent/KR20080050510A/ko not_active Application Discontinuation
- 2006-09-18 WO PCT/US2006/036292 patent/WO2007038050A2/en active Application Filing
- 2006-09-18 CN CNA2006800343626A patent/CN101553597A/zh active Pending
- 2006-09-18 JP JP2008531413A patent/JP5813281B2/ja active Active
- 2006-09-20 TW TW095134871A patent/TWI426547B/zh active
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WO2007038050A3 (en) | 2009-04-16 |
KR20080050510A (ko) | 2008-06-05 |
WO2007038050A8 (en) | 2008-04-17 |
JP2009509039A (ja) | 2009-03-05 |
TW200721272A (en) | 2007-06-01 |
TWI426547B (zh) | 2014-02-11 |
CN101553597A (zh) | 2009-10-07 |
US20070065578A1 (en) | 2007-03-22 |
WO2007038050A2 (en) | 2007-04-05 |
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