JP5761724B2 - 薄膜形成方法および装置 - Google Patents
薄膜形成方法および装置 Download PDFInfo
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- JP5761724B2 JP5761724B2 JP2013011476A JP2013011476A JP5761724B2 JP 5761724 B2 JP5761724 B2 JP 5761724B2 JP 2013011476 A JP2013011476 A JP 2013011476A JP 2013011476 A JP2013011476 A JP 2013011476A JP 5761724 B2 JP5761724 B2 JP 5761724B2
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- 239000010409 thin film Substances 0.000 title claims description 49
- 238000000034 method Methods 0.000 title claims description 34
- 239000007789 gas Substances 0.000 claims description 81
- 239000010408 film Substances 0.000 claims description 61
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 39
- 230000015572 biosynthetic process Effects 0.000 claims description 38
- 125000002524 organometallic group Chemical group 0.000 claims description 36
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 239000011261 inert gas Substances 0.000 claims description 25
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 21
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims 5
- 239000000758 substrate Substances 0.000 description 48
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 12
- 238000000231 atomic layer deposition Methods 0.000 description 11
- 239000007787 solid Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 230000005669 field effect Effects 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 238000003746 solid phase reaction Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008014 freezing Effects 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 238000010671 solid-state reaction Methods 0.000 description 2
- ROTHYDOJKZVQNQ-UHFFFAOYSA-N C[Hf]NCC Chemical compound C[Hf]NCC ROTHYDOJKZVQNQ-UHFFFAOYSA-N 0.000 description 1
- HVADEXBLRNZABJ-UHFFFAOYSA-N C[Ti](N)(CC)C.[Ti] Chemical compound C[Ti](N)(CC)C.[Ti] HVADEXBLRNZABJ-UHFFFAOYSA-N 0.000 description 1
- 239000005749 Copper compound Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229940045985 antineoplastic platinum compound Drugs 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 150000001785 cerium compounds Chemical class 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 150000002259 gallium compounds Chemical class 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002363 hafnium compounds Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002604 lanthanum compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 235000014593 oils and fats Nutrition 0.000 description 1
- 150000002908 osmium compounds Chemical class 0.000 description 1
- 150000003058 platinum compounds Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 150000003682 vanadium compounds Chemical class 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- -1 yttrium compound Chemical class 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- 150000003755 zirconium compounds Chemical class 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
本発明の第7の態様は、前記成膜対象を載置した反応容器内で実施することを特徴とする第1〜6の何れか一つの態様に記載の薄膜形成方法にある。
3…流量制御器、4…不活性ガス容器、
5…活性化装置、6…被処理基板、
7…温度調整台、8…反応容器、
9…排気ポンプ、10…排気管、
11…ガラス管、
12…プラズマの発生した領域、
13…誘導コイル、
14…加湿器
Claims (9)
- 成膜対象を0℃より高く、100℃以下に保持した状態で、
前記成膜対象の成膜面上に、有機金属ガスを導入して、成膜面上に有機金属ガス分子を吸着させる第1の工程を実施し、
次いで、前記有機金属ガスを排気するか不活性ガスを導入した後、前記成膜対象の成膜面上に連通する流路であって、周りから高周波磁界を印加した流路に水蒸気を含有させた不活性ガスを導入して流路内部にプラズマを発生させ、前記流路で活性化されたガスを、前記有機金属ガス分子が吸着した成膜面上に導入して、吸着した有機金属ガス分子を酸化、分解して金属酸化物とすると共にその表面にハイドロキシル基を形成する第2の工程を実施し、
その後、前記活性化されたガスを排気するか不活性ガスを導入した後、前記第1の工程及び第2の工程を繰り返すことにより、金属酸化物薄膜を形成することを特徴とする薄膜形成方法。 - 最初の第1の工程の前に、前記成膜対象の成膜面上に、前記流路で活性化されたガスを導入して、成膜面にハイドロキシル基を形成する予備工程を実施し、
次いで、前記活性化されたガスを排気するか不活性ガスを導入することを特徴とする請求項1記載の薄膜形成方法。 - 前記予備工程において、前記活性化されたガスを導入する前に、オゾンを導入し、その後、オゾンを排気するか不活性ガスを導入し、その後、前記活性化されたガスを導入することを特徴とする請求項2記載の薄膜形成方法。
- 前記第2の工程において、前記有機金属ガスを導入する前に、オゾンを導入し、その後、オゾンを排気するか不活性ガスを導入し、その後、前記活性化されたガスを導入することを特徴とする請求項1〜3の何れか一項に記載の薄膜形成方法。
- 前記水蒸気を含有させた不活性ガスは、水をくぐらせた不活性ガスとすることを特徴とする請求項1〜4の何れか一項に記載の薄膜形成方法。
- 前記水蒸気を含有させた不活性ガスは、水をくぐらせたアルゴンガスとすることを特徴とする請求項5に記載の薄膜形成方法。
- 前記成膜対象を載置した反応容器内で実施することを特徴とする請求項1〜6の何れか一項に記載の薄膜形成方法。
- 成膜対象を0℃より高く、30℃以下に保持した状態で、各工程を実施することを特徴とする請求項1〜7の何れか一項に記載の薄膜形成方法。
- 請求項1〜8の何れか一項の薄膜形成方法を実施する薄膜形成装置であって、
成膜対象を保持する機構を備えた反応容器と、その成膜対象の温度を、0℃より高く、100℃以下に保持する機構と、前記反応容器内に有機金属ガスを供給する供給手段と、前記反応容器に連通するガラス管及びその周りから高周波磁界を印加して前記ガラス管内部にプラズマを発生させる機構を備え前記ガラス管から水蒸気を含有させた不活性ガスを導入するプラズマガス供給手段とを具備することを特徴とする薄膜形成装置。
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US11345994B2 (en) | 2019-05-24 | 2022-05-31 | Creative Coatings Co., Ltd. | Method for forming coating film on powder, container for use in formation of coating film on powder, and ALP apparatus |
WO2022138332A1 (ja) | 2020-12-23 | 2022-06-30 | 株式会社クリエイティブコーティングス | 金属膜のald装置 |
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JP6484892B2 (ja) * | 2013-12-18 | 2019-03-20 | 国立大学法人山形大学 | 酸化物薄膜の形成方法および装置 |
JP5795427B1 (ja) * | 2014-12-26 | 2015-10-14 | 竹本容器株式会社 | 被膜付き樹脂容器の製造方法及び樹脂容器被覆装置 |
JP6486696B2 (ja) * | 2015-01-15 | 2019-03-20 | 国立大学法人山形大学 | 薄膜堆積方法及び薄膜堆積装置 |
JP6662520B2 (ja) * | 2015-10-02 | 2020-03-11 | 国立大学法人山形大学 | 内面コーティング方法及び装置 |
JP2020178020A (ja) * | 2019-04-17 | 2020-10-29 | 国立大学法人山形大学 | 薄膜堆積方法及び装置 |
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JP3670628B2 (ja) * | 2002-06-20 | 2005-07-13 | 株式会社東芝 | 成膜方法、成膜装置、および半導体装置の製造方法 |
US20070065578A1 (en) * | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
US7498273B2 (en) * | 2006-05-30 | 2009-03-03 | Applied Materials, Inc. | Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes |
CN101971303B (zh) * | 2007-09-04 | 2013-05-01 | 东京毅力科创株式会社 | Sr-Ti-O系膜的成膜方法和存储媒介 |
JP2009212303A (ja) * | 2008-03-04 | 2009-09-17 | Hitachi Kokusai Electric Inc | 基板処理方法 |
US9711373B2 (en) * | 2008-09-22 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a gate dielectric for high-k metal gate devices |
JP5329265B2 (ja) * | 2009-03-09 | 2013-10-30 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理装置 |
KR20110006450A (ko) * | 2009-07-14 | 2011-01-20 | 삼성전자주식회사 | 반도체 소자의 유전 박막 형성 방법 |
JP5184498B2 (ja) * | 2009-12-10 | 2013-04-17 | 日本電信電話株式会社 | 成膜方法 |
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US11345994B2 (en) | 2019-05-24 | 2022-05-31 | Creative Coatings Co., Ltd. | Method for forming coating film on powder, container for use in formation of coating film on powder, and ALP apparatus |
WO2022138332A1 (ja) | 2020-12-23 | 2022-06-30 | 株式会社クリエイティブコーティングス | 金属膜のald装置 |
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