JP5741583B2 - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 146
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 109
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 106
- 239000013078 crystal Substances 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 62
- 238000005530 etching Methods 0.000 claims description 40
- 239000012495 reaction gas Substances 0.000 claims description 11
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000000460 chlorine Substances 0.000 claims description 9
- 229910052801 chlorine Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 253
- 230000015556 catabolic process Effects 0.000 description 29
- 239000012535 impurity Substances 0.000 description 22
- 238000000137 annealing Methods 0.000 description 19
- 239000011229 interlayer Substances 0.000 description 19
- 230000004913 activation Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- -1 p-type conductivity Chemical compound 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
図1を参照して、本発明による半導体装置の実施の形態1を説明する。
図13を参照して、本発明による半導体装置の実施の形態2を説明する。
図23を参照して、本発明による半導体装置の実施の形態3を説明する。
図24に示した半導体装置は、基本的には図23に示した半導体装置と同様の構造を備えるが、ガードリング45(図23参照)に代えてJTE(Junction Termination Extension)領域46が形成されている点が異なる。JTE領域46は、導電型がp型の領域である。このようなJTE領域46も、図23に示したガードリング45と同様にイオン注入および活性化アニールを実施することにより形成することができる。そして、図23に示した半導体装置の製造方法と同様に、図24に示した半導体装置の製造方法においても、JTE領域46を形成するためのイオン注入後の活性化アニール処理においては、少なくとも側面20を覆うようなキャップ層を形成することなく活性化アニール処理を実施する。このようにしても、側面20は安定な結晶面(たとえば{03−3−8}面)によって構成されているため、当該活性アニールによっても側面20の表面が荒れるといった問題は発生しない。
Claims (9)
- 主表面を有する基板と、
前記基板の前記主表面上に形成され、第1導電型の第1層と第2導電型の第2層とを含む積層構造を有する炭化珪素層とを備え、
前記炭化珪素層は、前記主表面に対して傾斜した端面を含み、
前記端面上において前記第1層および前記第2層に直接接するように設けられた絶縁膜をさらに備え、
前記端面は、前記炭化珪素層の結晶型が六方晶の場合には実質的に{03−3−8}面および{01−1−4}面のいずれか一方を含み、前記炭化珪素層の結晶型が立方晶の場合には実質的に{100}面を含む、半導体装置。 - 前記端面は能動領域を含む、請求項1に記載の半導体装置。
- 前記能動領域はチャネル領域を含む、請求項2に記載の半導体装置。
- 前記炭化珪素層は、前記基板と対向する面と反対側に位置する主表面において、前記端面が側面を構成するメサ構造を含み、
前記メサ構造中にPN接合部が形成されている、請求項1に記載の半導体装置。 - 前記端面の少なくとも一部は終端構造を構成する、請求項1〜請求項4のいずれか1項に記載の半導体装置。
- 第1導電型の第1層と第2導電型の第2層とを含む積層構造を有する炭化珪素層が形成された基板を準備する工程と、
前記炭化珪素層に、酸素および塩素を含有する反応ガスを接触させながら、前記炭化珪素層を加熱して、前記炭化珪素層の主表面を部分的にエッチングにより除去することにより、前記炭化珪素層の前記主表面に対して傾斜した端面を形成する工程と、
前記端面上において前記第1層および前記第2層に直接接するように絶縁膜を設ける工程と、
前記端面を利用して、半導体装置に含まれる構造を形成する工程とを備え、
前記端面は、前記炭化珪素層の結晶型が六方晶の場合には実質的に{03−3−8}面および{01−1−4}面のいずれか一方を含み、前記炭化珪素層の結晶型が立方晶の場合には実質的に{100}面を含む、半導体装置の製造方法。 - 前記端面を形成する工程に先立って、前記炭化珪素層の前記主表面上に、パターンを有するマスク層を形成する工程をさらに備え、
前記端面を形成する工程では、前記マスク層をマスクとして用いて溝を形成するためのエッチングを行なう、請求項6に記載の半導体装置の製造方法。 - 前記端面を形成する工程において用いる反応ガスでは、塩素の流量に対する酸素の流量の比率が0.1以上2.0である、請求項6または請求項7に記載の半導体装置の製造方法。
- 前記端面を形成する工程において前記炭化珪素層を加熱する温度は、700℃以上1200℃以下である、請求項6〜請求項8のいずれか1項に記載の半導体装置の製造方法。
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Also Published As
Publication number | Publication date |
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US20120309195A1 (en) | 2012-12-06 |
CN102844868A (zh) | 2012-12-26 |
KR20130118215A (ko) | 2013-10-29 |
JPWO2012017798A1 (ja) | 2013-10-03 |
EP2602823B1 (en) | 2020-03-11 |
WO2012017958A1 (ja) | 2012-02-09 |
EP2602824B1 (en) | 2016-06-01 |
TW201216409A (en) | 2012-04-16 |
US8981384B2 (en) | 2015-03-17 |
CN102971853A (zh) | 2013-03-13 |
CA2790741A1 (en) | 2012-02-09 |
KR20130098138A (ko) | 2013-09-04 |
EP2602823A4 (en) | 2017-08-16 |
US20130112996A1 (en) | 2013-05-09 |
EP2602824A4 (en) | 2015-02-18 |
EP2602823A1 (en) | 2013-06-12 |
CN102971853B (zh) | 2016-06-29 |
WO2012017798A9 (ja) | 2013-01-10 |
WO2012017958A9 (ja) | 2013-01-03 |
US9054022B2 (en) | 2015-06-09 |
TW201216460A (en) | 2012-04-16 |
WO2012017798A1 (ja) | 2012-02-09 |
CN102844868B (zh) | 2015-12-16 |
JPWO2012017958A1 (ja) | 2013-10-03 |
JP5741584B2 (ja) | 2015-07-01 |
EP2602824A1 (en) | 2013-06-12 |
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