DE602004025798D1 - Verfahren zur Oberflächenbehandlung eines Metallcarbid-Substrates zur Verwendung in Halbleiterherstech - Google Patents
Verfahren zur Oberflächenbehandlung eines Metallcarbid-Substrates zur Verwendung in HalbleiterherstechInfo
- Publication number
- DE602004025798D1 DE602004025798D1 DE602004025798T DE602004025798T DE602004025798D1 DE 602004025798 D1 DE602004025798 D1 DE 602004025798D1 DE 602004025798 T DE602004025798 T DE 602004025798T DE 602004025798 T DE602004025798 T DE 602004025798T DE 602004025798 D1 DE602004025798 D1 DE 602004025798D1
- Authority
- DE
- Germany
- Prior art keywords
- metal
- carbide substrate
- semiconductor
- manufacturing processes
- semiconductor manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5346—Dry etching
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04076897A EP1612851B1 (de) | 2004-06-30 | 2004-06-30 | Verfahren zur Oberflächenbehandlung eines Metallcarbid-Substrates zur Verwendung in Halbleiterherstellungverfahren und ein Metallcarbid-Substrat an sich |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004025798D1 true DE602004025798D1 (de) | 2010-04-15 |
Family
ID=34928324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004025798T Active DE602004025798D1 (de) | 2004-06-30 | 2004-06-30 | Verfahren zur Oberflächenbehandlung eines Metallcarbid-Substrates zur Verwendung in Halbleiterherstech |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1612851B1 (de) |
JP (1) | JP5015419B2 (de) |
KR (1) | KR101116469B1 (de) |
CN (1) | CN1716522A (de) |
AT (1) | ATE459979T1 (de) |
DE (1) | DE602004025798D1 (de) |
SG (1) | SG118291A1 (de) |
TW (1) | TWI384521B (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2939789B1 (fr) * | 2008-12-16 | 2011-02-11 | Snecma Propulsion Solide | Procede de traitement de fibres ceramiques |
US8981384B2 (en) | 2010-08-03 | 2015-03-17 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method for manufacturing same |
JP5759293B2 (ja) * | 2011-07-20 | 2015-08-05 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP5699878B2 (ja) | 2011-09-14 | 2015-04-15 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2013069964A (ja) | 2011-09-26 | 2013-04-18 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
US9343379B2 (en) * | 2011-10-14 | 2016-05-17 | Sunedison Semiconductor Limited | Method to delineate crystal related defects |
JP5764046B2 (ja) * | 2011-11-21 | 2015-08-12 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
CN102530936A (zh) * | 2012-01-03 | 2012-07-04 | 西安电子科技大学 | 基于Cl2反应的SiC衬底上制备石墨烯的方法 |
CN102583329B (zh) * | 2012-01-03 | 2013-08-14 | 西安电子科技大学 | 基于Cu膜辅助退火和Cl2反应的大面积石墨烯制备方法 |
CN102505114A (zh) | 2012-01-03 | 2012-06-20 | 西安电子科技大学 | 基于Ni膜辅助退火的SiC衬底上石墨烯制备方法 |
CN102674329A (zh) * | 2012-05-22 | 2012-09-19 | 西安电子科技大学 | 基于Cl2反应的结构化石墨烯制备方法 |
CN102718207A (zh) * | 2012-05-22 | 2012-10-10 | 西安电子科技大学 | 基于Cu膜退火和Cl2反应的结构化石墨烯制备方法 |
CN102701789B (zh) * | 2012-05-23 | 2013-10-16 | 西安电子科技大学 | 基于Cl2反应的SiC衬底上制备结构化石墨烯的方法 |
CN102674332A (zh) * | 2012-05-23 | 2012-09-19 | 西安电子科技大学 | 基于Cu膜退火的SiC与Cl2反应制备结构化石墨烯的方法 |
CN102674331A (zh) * | 2012-05-23 | 2012-09-19 | 西安电子科技大学 | 基于Ni膜退火的SiC与Cl2反应制备结构化石墨烯的方法 |
JP2014027093A (ja) * | 2012-07-26 | 2014-02-06 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法 |
CN108574107A (zh) * | 2018-03-16 | 2018-09-25 | 上海交通大学 | 改善燃料电池双极板碳化物涂层导电及耐蚀性的方法 |
USD887639S1 (en) * | 2018-09-07 | 2020-06-16 | Shih-Ling Hsu | Hair accessory |
JP7220845B2 (ja) * | 2019-04-18 | 2023-02-13 | 住友金属鉱山株式会社 | サセプタ、サセプタの再生方法、及び、成膜方法 |
EP3976851A1 (de) * | 2019-05-27 | 2022-04-06 | Schunk Xycarb Technology B.V. | Kammerartikel für chemische gasphasenabscheidung |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010047980A1 (en) * | 1999-09-01 | 2001-12-06 | Mcnallan Michael J. | Process for converting a metal carbide to diamond by etching in halogens |
US6579833B1 (en) * | 1999-09-01 | 2003-06-17 | The Board Of Trustees Of The University Of Illinois | Process for converting a metal carbide to carbon by etching in halogens |
US6407014B1 (en) * | 1999-12-16 | 2002-06-18 | Philips Electronics North America Corporation | Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices |
JP4325095B2 (ja) * | 2000-09-08 | 2009-09-02 | 株式会社デンソー | SiC素子の製造方法 |
JP2002110644A (ja) * | 2000-09-28 | 2002-04-12 | Nec Corp | エッチング方法 |
JP4152130B2 (ja) * | 2002-03-25 | 2008-09-17 | 日本碍子株式会社 | エピタキシャル膜の製造方法およびエピタキシャル膜被覆基板の製造方法 |
-
2004
- 2004-06-30 DE DE602004025798T patent/DE602004025798D1/de active Active
- 2004-06-30 EP EP04076897A patent/EP1612851B1/de active Active
- 2004-06-30 AT AT04076897T patent/ATE459979T1/de active
- 2004-07-05 TW TW093120111A patent/TWI384521B/zh active
- 2004-07-08 CN CNA2004100832767A patent/CN1716522A/zh active Pending
- 2004-07-12 KR KR1020040053891A patent/KR101116469B1/ko active IP Right Grant
- 2004-07-16 JP JP2004210010A patent/JP5015419B2/ja active Active
- 2004-09-22 SG SG200405265A patent/SG118291A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
TWI384521B (zh) | 2013-02-01 |
EP1612851A1 (de) | 2006-01-04 |
EP1612851B1 (de) | 2010-03-03 |
CN1716522A (zh) | 2006-01-04 |
KR20060001771A (ko) | 2006-01-06 |
JP2006016288A (ja) | 2006-01-19 |
ATE459979T1 (de) | 2010-03-15 |
SG118291A1 (en) | 2006-01-27 |
KR101116469B1 (ko) | 2012-03-07 |
JP5015419B2 (ja) | 2012-08-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |