JP5015419B2 - 半導体製造プロセスに使用される金属炭化物基体の表面処理方法、および金属炭化物基体 - Google Patents
半導体製造プロセスに使用される金属炭化物基体の表面処理方法、および金属炭化物基体 Download PDFInfo
- Publication number
- JP5015419B2 JP5015419B2 JP2004210010A JP2004210010A JP5015419B2 JP 5015419 B2 JP5015419 B2 JP 5015419B2 JP 2004210010 A JP2004210010 A JP 2004210010A JP 2004210010 A JP2004210010 A JP 2004210010A JP 5015419 B2 JP5015419 B2 JP 5015419B2
- Authority
- JP
- Japan
- Prior art keywords
- carbide substrate
- metal carbide
- gas mixture
- halogen
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5346—Dry etching
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
Description
である。さらに、上記反応性ガス混合物は、水素(H2)をも含有し得る。
SiC + 2Cl2 → SiCl4 + C (1)
に従って反応する。
SiC + 4HCl → SiCl4 + C + 2H2 (2)
に従って反応する。
11…表面
12…マイクロクラック
13…炭素表面層
14…遷移層
Claims (18)
- 半導体製造プロセスに使用される金属炭化物基体の、該金属炭化物基体中に延びるマイクロクラックの形態にある内層面損傷を除去するための表面処理方法であって、
ハロゲン含有ガス混合物を用いて前記金属炭化物基体の表面を単一工程で1000℃〜1200℃で選択的にエッチングし、それにより前記金属炭化物基体中に、前記マイクロクラックをカバーする深さと少なくとも等しい深さを有する炭素表面層を形成する工程、および
前記金属炭化物基体上に形成された、前記マイクロクラックをカバーする前記炭素表面層のすべてを除去して、前記金属炭化物基体上にクリーンで炭素のない表面を生成し、前記マイクロクラックの形態にある内層面損傷が除去される工程
を包含する方法。 - 前記炭素表面層を除去する工程を、酸化処理技術により行う請求項1に記載の方法。
- 前記炭素表面層を除去する工程を、水素化処理技術により行う請求項1に記載の方法。
- 前記炭素表面層を除去する工程を、水熱処理技術により行う請求項1に記載の方法。
- 前記ハロゲン含有ガス混合物のハロゲン含有ガス濃度が100%である請求項1に記載の方法。
- 前記ハロゲン含有ガスが、Ar雰囲気中のCl2である請求項1に記載の方法。
- 前記ハロゲン含有ガス混合物が、水素(H2)をも含有する請求項1に記載の方法。
- 前記ハロゲン含有ガス混合物の流量が、毎分0.5〜5リットルである請求項1〜7のいずれか1項に記載の方法。
- 前記ハロゲン含有ガス混合物の使用圧力が、100mbar〜周囲圧力である請求項1〜8のいずれか1項に記載の方法。
- 請求項1に記載の方法により得られる、半導体製造プロセスに使用するための金属炭化物基体であって、前記金属炭化物基体の表面内に、炭素表面層が、前記金属炭化物中に延びるマイクロクラックの形態にある内層面損傷をカバーする深さまでハロゲン含有ガス混合物を含有する反応性ガス混合物を用いた1000℃〜1200℃での単一工程の選択的エッチングにより形成されており、前記炭素表面層は、後に、前記金属炭化物基体から除去されて、前記金属炭化物基体上にクリーンで炭素のない表面を生成し、前記マイクロクラックの形態にある内層面損傷は除去されている金属炭化物基体。
- 前記炭素表面層が、酸化処理技術により除去される請求項10に記載の金属炭化物基体。
- 前記炭素表面層が、水素化処理技術により除去される請求項10に記載の金属炭化物基体。
- 前記炭素表面層が、水熱処理技術により除去される請求項10に記載の金属炭化物基体。
- 前記反応性ガス混合物の前記ハロゲン含有ガスの濃度が100%である請求項10に記載の金属炭化物基体。
- 前記ハロゲン含有ガスが、Ar雰囲気中のCl2である請求項10〜14のいずれか1項に記載の金属炭化物基体。
- 前記反応性ガス混合物が水素(H2)をも含有する請求項10〜15のいずれか1項に記載の金属炭化物基体。
- 前記反応性ガス混合物の流量が、毎分0.5〜5リットルである請求項10〜16のいずれか1項に記載の金属炭化物基体。
- 前記金属炭化物基体表面が、100mbar〜周囲圧力の前記反応性ガス混合物の使用圧力に供される請求項10〜16のいずれか1項に記載の金属炭化物基体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04076897A EP1612851B1 (en) | 2004-06-30 | 2004-06-30 | A method for the treatment of a surface of a metal-carbide substrate for use in semiconductor manufacturing processes as well as such a metal-carbide substrate |
EP04076897.0 | 2004-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006016288A JP2006016288A (ja) | 2006-01-19 |
JP5015419B2 true JP5015419B2 (ja) | 2012-08-29 |
Family
ID=34928324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004210010A Active JP5015419B2 (ja) | 2004-06-30 | 2004-07-16 | 半導体製造プロセスに使用される金属炭化物基体の表面処理方法、および金属炭化物基体 |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1612851B1 (ja) |
JP (1) | JP5015419B2 (ja) |
KR (1) | KR101116469B1 (ja) |
CN (1) | CN1716522A (ja) |
AT (1) | ATE459979T1 (ja) |
DE (1) | DE602004025798D1 (ja) |
SG (1) | SG118291A1 (ja) |
TW (1) | TWI384521B (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2939789B1 (fr) | 2008-12-16 | 2011-02-11 | Snecma Propulsion Solide | Procede de traitement de fibres ceramiques |
US8981384B2 (en) | 2010-08-03 | 2015-03-17 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method for manufacturing same |
JP5759293B2 (ja) * | 2011-07-20 | 2015-08-05 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP5699878B2 (ja) | 2011-09-14 | 2015-04-15 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2013069964A (ja) | 2011-09-26 | 2013-04-18 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
US9343379B2 (en) * | 2011-10-14 | 2016-05-17 | Sunedison Semiconductor Limited | Method to delineate crystal related defects |
JP5764046B2 (ja) | 2011-11-21 | 2015-08-12 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
CN102505114A (zh) | 2012-01-03 | 2012-06-20 | 西安电子科技大学 | 基于Ni膜辅助退火的SiC衬底上石墨烯制备方法 |
CN102583329B (zh) * | 2012-01-03 | 2013-08-14 | 西安电子科技大学 | 基于Cu膜辅助退火和Cl2反应的大面积石墨烯制备方法 |
CN102530936A (zh) * | 2012-01-03 | 2012-07-04 | 西安电子科技大学 | 基于Cl2反应的SiC衬底上制备石墨烯的方法 |
CN102718207A (zh) * | 2012-05-22 | 2012-10-10 | 西安电子科技大学 | 基于Cu膜退火和Cl2反应的结构化石墨烯制备方法 |
CN102674329A (zh) * | 2012-05-22 | 2012-09-19 | 西安电子科技大学 | 基于Cl2反应的结构化石墨烯制备方法 |
CN102701789B (zh) | 2012-05-23 | 2013-10-16 | 西安电子科技大学 | 基于Cl2反应的SiC衬底上制备结构化石墨烯的方法 |
CN102674332A (zh) * | 2012-05-23 | 2012-09-19 | 西安电子科技大学 | 基于Cu膜退火的SiC与Cl2反应制备结构化石墨烯的方法 |
CN102674331A (zh) * | 2012-05-23 | 2012-09-19 | 西安电子科技大学 | 基于Ni膜退火的SiC与Cl2反应制备结构化石墨烯的方法 |
JP2014027093A (ja) * | 2012-07-26 | 2014-02-06 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法 |
CN108574107A (zh) * | 2018-03-16 | 2018-09-25 | 上海交通大学 | 改善燃料电池双极板碳化物涂层导电及耐蚀性的方法 |
USD887639S1 (en) * | 2018-09-07 | 2020-06-16 | Shih-Ling Hsu | Hair accessory |
JP7220845B2 (ja) * | 2019-04-18 | 2023-02-13 | 住友金属鉱山株式会社 | サセプタ、サセプタの再生方法、及び、成膜方法 |
CN114026263A (zh) * | 2019-05-27 | 2022-02-08 | 顺克·齐卡博技术有限公司 | 化学气相沉积室制品 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6579833B1 (en) * | 1999-09-01 | 2003-06-17 | The Board Of Trustees Of The University Of Illinois | Process for converting a metal carbide to carbon by etching in halogens |
US20010047980A1 (en) * | 1999-09-01 | 2001-12-06 | Mcnallan Michael J. | Process for converting a metal carbide to diamond by etching in halogens |
US6407014B1 (en) * | 1999-12-16 | 2002-06-18 | Philips Electronics North America Corporation | Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices |
JP4325095B2 (ja) * | 2000-09-08 | 2009-09-02 | 株式会社デンソー | SiC素子の製造方法 |
JP2002110644A (ja) * | 2000-09-28 | 2002-04-12 | Nec Corp | エッチング方法 |
JP4152130B2 (ja) * | 2002-03-25 | 2008-09-17 | 日本碍子株式会社 | エピタキシャル膜の製造方法およびエピタキシャル膜被覆基板の製造方法 |
-
2004
- 2004-06-30 EP EP04076897A patent/EP1612851B1/en active Active
- 2004-06-30 AT AT04076897T patent/ATE459979T1/de active
- 2004-06-30 DE DE602004025798T patent/DE602004025798D1/de active Active
- 2004-07-05 TW TW093120111A patent/TWI384521B/zh active
- 2004-07-08 CN CNA2004100832767A patent/CN1716522A/zh active Pending
- 2004-07-12 KR KR1020040053891A patent/KR101116469B1/ko active IP Right Grant
- 2004-07-16 JP JP2004210010A patent/JP5015419B2/ja active Active
- 2004-09-22 SG SG200405265A patent/SG118291A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
JP2006016288A (ja) | 2006-01-19 |
KR101116469B1 (ko) | 2012-03-07 |
EP1612851B1 (en) | 2010-03-03 |
TWI384521B (zh) | 2013-02-01 |
KR20060001771A (ko) | 2006-01-06 |
SG118291A1 (en) | 2006-01-27 |
DE602004025798D1 (de) | 2010-04-15 |
ATE459979T1 (de) | 2010-03-15 |
CN1716522A (zh) | 2006-01-04 |
EP1612851A1 (en) | 2006-01-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5015419B2 (ja) | 半導体製造プロセスに使用される金属炭化物基体の表面処理方法、および金属炭化物基体 | |
US7250114B2 (en) | Methods of finishing quartz glass surfaces and components made by the methods | |
US7022545B2 (en) | Production method of SiC monitor wafer | |
US6825123B2 (en) | Method for treating semiconductor processing components and components formed thereby | |
KR102046811B1 (ko) | 에피택셜 성장 장치, 에피택셜 웨이퍼의 제조 방법 및 에피택셜 성장 장치용 리프트 핀 | |
JP2006306675A (ja) | 石英ガラス製治具の再生方法 | |
JP2019195020A (ja) | 半導体シリコンウェーハの金属不純物除去方法 | |
CN101884099B (zh) | 用于处理半导体加工部件的方法以及由此形成的部件 | |
KR102017138B1 (ko) | 탄화규소 제품의 재생 방법 및 재생된 탄화규소 제품 | |
JP4998246B2 (ja) | 半導体基板支持治具及びその製造方法。 | |
US7723155B2 (en) | Method for the treatment of a surface of a metal-carbide substrate for use in semiconductor manufacturing processes as well as such a metal-carbide substrate | |
US20140030874A1 (en) | Method for manufacturing silicon carbide substrate | |
JP4603865B2 (ja) | 酸化膜付きシリコン基板の製造方法及び酸化膜付きシリコン基板 | |
KR100423754B1 (ko) | 실리콘 웨이퍼의 고온 열처리 방법 | |
CN114026263A (zh) | 化学气相沉积室制品 | |
JP2005183535A (ja) | ウェーハ支持具の製造方法及び該方法により得られたウェーハ支持具 | |
JPH0397691A (ja) | 半導体装置製造用治具 | |
JPH11340108A (ja) | 炭化ケイ素質ダミーウェハ | |
JP2001323372A (ja) | 炭化ケイ素ダミーウエハの製造方法および炭化ケイ素ダミーウエハ | |
JP2006097058A (ja) | 窒化ガリウム結晶体を製造する方法および窒化ガリウム基板を製造する方法 | |
JP2006282466A (ja) | ガラス状カーボン基材の微細加工方法及び微細加工物 | |
JP2007287948A (ja) | 表面加工方法及び表面加工物 | |
KR19980070836A (ko) | 실리콘 함유 코팅의 제거 방법 | |
JPWO2009072513A1 (ja) | 合成石英ガラス治具の処理方法及び得られた合成石英ガラス治具並びにその使用方法 | |
JPH0835081A (ja) | プラズマエッチング用電極板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070130 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100518 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100818 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100823 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101116 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110510 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110912 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20110920 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120405 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120508 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120607 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150615 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5015419 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |