ATE459979T1 - Verfahren zur oberflächenbehandlung eines metallcarbid-substrates zur verwendung in halbleiterherstellungverfahren und ein metallcarbid-substrat an sich - Google Patents

Verfahren zur oberflächenbehandlung eines metallcarbid-substrates zur verwendung in halbleiterherstellungverfahren und ein metallcarbid-substrat an sich

Info

Publication number
ATE459979T1
ATE459979T1 AT04076897T AT04076897T ATE459979T1 AT E459979 T1 ATE459979 T1 AT E459979T1 AT 04076897 T AT04076897 T AT 04076897T AT 04076897 T AT04076897 T AT 04076897T AT E459979 T1 ATE459979 T1 AT E459979T1
Authority
AT
Austria
Prior art keywords
carbide substrate
metal
manufacturing processes
semiconductor manufacturing
metal carbide
Prior art date
Application number
AT04076897T
Other languages
English (en)
Inventor
Munster Marcus Gerardus Van
Original Assignee
Xycarb Ceramics Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xycarb Ceramics Bv filed Critical Xycarb Ceramics Bv
Application granted granted Critical
Publication of ATE459979T1 publication Critical patent/ATE459979T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5346—Dry etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
AT04076897T 2004-06-30 2004-06-30 Verfahren zur oberflächenbehandlung eines metallcarbid-substrates zur verwendung in halbleiterherstellungverfahren und ein metallcarbid-substrat an sich ATE459979T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04076897A EP1612851B1 (de) 2004-06-30 2004-06-30 Verfahren zur Oberflächenbehandlung eines Metallcarbid-Substrates zur Verwendung in Halbleiterherstellungverfahren und ein Metallcarbid-Substrat an sich

Publications (1)

Publication Number Publication Date
ATE459979T1 true ATE459979T1 (de) 2010-03-15

Family

ID=34928324

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04076897T ATE459979T1 (de) 2004-06-30 2004-06-30 Verfahren zur oberflächenbehandlung eines metallcarbid-substrates zur verwendung in halbleiterherstellungverfahren und ein metallcarbid-substrat an sich

Country Status (8)

Country Link
EP (1) EP1612851B1 (de)
JP (1) JP5015419B2 (de)
KR (1) KR101116469B1 (de)
CN (1) CN1716522A (de)
AT (1) ATE459979T1 (de)
DE (1) DE602004025798D1 (de)
SG (1) SG118291A1 (de)
TW (1) TWI384521B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2939789B1 (fr) 2008-12-16 2011-02-11 Snecma Propulsion Solide Procede de traitement de fibres ceramiques
US8981384B2 (en) 2010-08-03 2015-03-17 Sumitomo Electric Industries, Ltd. Semiconductor device and method for manufacturing same
JP5759293B2 (ja) * 2011-07-20 2015-08-05 住友電気工業株式会社 半導体装置の製造方法
JP5699878B2 (ja) 2011-09-14 2015-04-15 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2013069964A (ja) 2011-09-26 2013-04-18 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
US9343379B2 (en) * 2011-10-14 2016-05-17 Sunedison Semiconductor Limited Method to delineate crystal related defects
JP5764046B2 (ja) 2011-11-21 2015-08-12 住友電気工業株式会社 炭化珪素半導体装置の製造方法
CN102505114A (zh) 2012-01-03 2012-06-20 西安电子科技大学 基于Ni膜辅助退火的SiC衬底上石墨烯制备方法
CN102583329B (zh) * 2012-01-03 2013-08-14 西安电子科技大学 基于Cu膜辅助退火和Cl2反应的大面积石墨烯制备方法
CN102530936A (zh) * 2012-01-03 2012-07-04 西安电子科技大学 基于Cl2反应的SiC衬底上制备石墨烯的方法
CN102718207A (zh) * 2012-05-22 2012-10-10 西安电子科技大学 基于Cu膜退火和Cl2反应的结构化石墨烯制备方法
CN102674329A (zh) * 2012-05-22 2012-09-19 西安电子科技大学 基于Cl2反应的结构化石墨烯制备方法
CN102701789B (zh) 2012-05-23 2013-10-16 西安电子科技大学 基于Cl2反应的SiC衬底上制备结构化石墨烯的方法
CN102674332A (zh) * 2012-05-23 2012-09-19 西安电子科技大学 基于Cu膜退火的SiC与Cl2反应制备结构化石墨烯的方法
CN102674331A (zh) * 2012-05-23 2012-09-19 西安电子科技大学 基于Ni膜退火的SiC与Cl2反应制备结构化石墨烯的方法
JP2014027093A (ja) * 2012-07-26 2014-02-06 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法
CN108574107A (zh) * 2018-03-16 2018-09-25 上海交通大学 改善燃料电池双极板碳化物涂层导电及耐蚀性的方法
USD887639S1 (en) * 2018-09-07 2020-06-16 Shih-Ling Hsu Hair accessory
JP7220845B2 (ja) * 2019-04-18 2023-02-13 住友金属鉱山株式会社 サセプタ、サセプタの再生方法、及び、成膜方法
CN114026263A (zh) * 2019-05-27 2022-02-08 顺克·齐卡博技术有限公司 化学气相沉积室制品

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6579833B1 (en) * 1999-09-01 2003-06-17 The Board Of Trustees Of The University Of Illinois Process for converting a metal carbide to carbon by etching in halogens
US20010047980A1 (en) * 1999-09-01 2001-12-06 Mcnallan Michael J. Process for converting a metal carbide to diamond by etching in halogens
US6407014B1 (en) * 1999-12-16 2002-06-18 Philips Electronics North America Corporation Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
JP4325095B2 (ja) * 2000-09-08 2009-09-02 株式会社デンソー ＳｉＣ素子の製造方法
JP2002110644A (ja) * 2000-09-28 2002-04-12 Nec Corp エッチング方法
JP4152130B2 (ja) * 2002-03-25 2008-09-17 日本碍子株式会社 エピタキシャル膜の製造方法およびエピタキシャル膜被覆基板の製造方法

Also Published As

Publication number Publication date
JP2006016288A (ja) 2006-01-19
KR101116469B1 (ko) 2012-03-07
EP1612851B1 (de) 2010-03-03
TWI384521B (zh) 2013-02-01
KR20060001771A (ko) 2006-01-06
SG118291A1 (en) 2006-01-27
JP5015419B2 (ja) 2012-08-29
DE602004025798D1 (de) 2010-04-15
CN1716522A (zh) 2006-01-04
EP1612851A1 (de) 2006-01-04

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