ATE341836T1 - Misfet - Google Patents

Misfet

Info

Publication number
ATE341836T1
ATE341836T1 AT00976351T AT00976351T ATE341836T1 AT E341836 T1 ATE341836 T1 AT E341836T1 AT 00976351 T AT00976351 T AT 00976351T AT 00976351 T AT00976351 T AT 00976351T AT E341836 T1 ATE341836 T1 AT E341836T1
Authority
AT
Austria
Prior art keywords
active region
insulating film
type
gate insulating
increases
Prior art date
Application number
AT00976351T
Other languages
English (en)
Inventor
Toshiya Yokogawa
Makoto Kitabatake
Osamu Kusumoto
Kunimasa Takahashi
Takeshi Uenoyama
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of ATE341836T1 publication Critical patent/ATE341836T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/228—Channel regions of field-effect devices of FETs having delta-doped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H10P32/172—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material being crystalline silicon carbide

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
AT00976351T 2000-05-31 2000-11-20 Misfet ATE341836T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000161598 2000-05-31

Publications (1)

Publication Number Publication Date
ATE341836T1 true ATE341836T1 (de) 2006-10-15

Family

ID=18665600

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00976351T ATE341836T1 (de) 2000-05-31 2000-11-20 Misfet

Country Status (10)

Country Link
US (2) US6617653B1 (de)
EP (2) EP1684359A3 (de)
JP (1) JP3527503B2 (de)
KR (1) KR100708028B1 (de)
CN (1) CN100345306C (de)
AT (1) ATE341836T1 (de)
AU (1) AU1416701A (de)
DE (1) DE60031173T2 (de)
TW (1) TW475268B (de)
WO (1) WO2001093339A1 (de)

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CN1254026C (zh) * 2000-11-21 2006-04-26 松下电器产业株式会社 通信系统用仪器
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US6852602B2 (en) * 2001-01-31 2005-02-08 Matsushita Electric Industrial Co., Ltd. Semiconductor crystal film and method for preparation thereof
JP3811624B2 (ja) * 2001-04-27 2006-08-23 松下電器産業株式会社 半導体装置
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JP4463482B2 (ja) * 2002-07-11 2010-05-19 パナソニック株式会社 Ｍｉｓｆｅｔ及びその製造方法
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JP4537750B2 (ja) * 2004-04-02 2010-09-08 シャープ株式会社 固体撮像素子およびその製造方法
JP3945519B2 (ja) * 2004-06-21 2007-07-18 東京エレクトロン株式会社 被処理体の熱処理装置、熱処理方法及び記憶媒体
US7667264B2 (en) * 2004-09-27 2010-02-23 Alpha And Omega Semiconductor Limited Shallow source MOSFET
KR100613294B1 (ko) * 2004-12-30 2006-08-21 동부일렉트로닉스 주식회사 단채널 효과가 개선되는 모스 전계효과 트랜지스터 및 그제조 방법
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JP5055771B2 (ja) * 2005-02-28 2012-10-24 富士通セミコンダクター株式会社 半導体装置およびその製造方法
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US8482035B2 (en) * 2005-07-29 2013-07-09 International Rectifier Corporation Enhancement mode III-nitride transistors with single gate Dielectric structure
US8183595B2 (en) 2005-07-29 2012-05-22 International Rectifier Corporation Normally off III-nitride semiconductor device having a programmable gate
JP2007096263A (ja) * 2005-08-31 2007-04-12 Denso Corp 炭化珪素半導体装置およびその製造方法。
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US8258632B1 (en) * 2005-10-24 2012-09-04 Lawrence Livermore National Security, Llc Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces
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JP2008108785A (ja) * 2006-10-23 2008-05-08 Nec Electronics Corp 半導体装置およびその製造方法
US7795691B2 (en) * 2008-01-25 2010-09-14 Cree, Inc. Semiconductor transistor with P type re-grown channel layer
JPWO2009104299A1 (ja) * 2008-02-22 2011-06-16 住友電気工業株式会社 半導体装置および半導体装置の製造方法
US8841682B2 (en) * 2009-08-27 2014-09-23 Cree, Inc. Transistors with a gate insulation layer having a channel depleting interfacial charge and related fabrication methods
KR20130006442A (ko) 2010-03-23 2013-01-16 스미토모덴키고교가부시키가이샤 반도체 장치 및 그 제조 방법
CN102971853B (zh) 2010-08-03 2016-06-29 住友电气工业株式会社 半导体器件及其制造方法
TW201240016A (en) * 2011-03-25 2012-10-01 Taiwan Semiconductor Co Ltd Manufacturing method of semiconductor substrate
JP5699878B2 (ja) 2011-09-14 2015-04-15 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2013069964A (ja) 2011-09-26 2013-04-18 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP5764046B2 (ja) 2011-11-21 2015-08-12 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6239250B2 (ja) * 2013-03-22 2017-11-29 株式会社東芝 半導体装置およびその製造方法
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JP6526528B2 (ja) * 2015-09-11 2019-06-05 株式会社東芝 半導体装置
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JP6771669B2 (ja) * 2017-05-31 2020-10-21 三菱電機株式会社 半導体装置の製造方法
JP6791083B2 (ja) * 2017-09-28 2020-11-25 豊田合成株式会社 半導体装置の製造方法
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Also Published As

Publication number Publication date
EP1286398A4 (de) 2003-02-26
KR20020020949A (ko) 2002-03-16
WO2001093339A1 (en) 2001-12-06
US6617653B1 (en) 2003-09-09
US6864507B2 (en) 2005-03-08
EP1684359A9 (de) 2006-12-27
DE60031173T2 (de) 2007-01-18
US20030227061A1 (en) 2003-12-11
EP1684359A2 (de) 2006-07-26
AU1416701A (en) 2001-12-11
EP1286398B1 (de) 2006-10-04
CN1367937A (zh) 2002-09-04
JP3527503B2 (ja) 2004-05-17
TW475268B (en) 2002-02-01
EP1684359A3 (de) 2006-10-25
KR100708028B1 (ko) 2007-04-16
EP1286398A1 (de) 2003-02-26
DE60031173D1 (de) 2006-11-16
CN100345306C (zh) 2007-10-24

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