JP5718809B2 - 加工品の破壊を防止する方法および装置 - Google Patents

加工品の破壊を防止する方法および装置 Download PDF

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JP5718809B2
JP5718809B2 JP2011508781A JP2011508781A JP5718809B2 JP 5718809 B2 JP5718809 B2 JP 5718809B2 JP 2011508781 A JP2011508781 A JP 2011508781A JP 2011508781 A JP2011508781 A JP 2011508781A JP 5718809 B2 JP5718809 B2 JP 5718809B2
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wafer
deformation
measurement
heat treatment
processor circuit
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JP2011522400A5 (https=
JP2011522400A (ja
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カム、デーヴィッド、マルコム
シブレ、ジョセフ
スチュアート、グレッグ
マッコイ、スティーブ
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マトソン テクノロジー、インコーポレイテッド
マトソン テクノロジー、インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D11/00—Process control or regulation for heat treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
JP2011508781A 2008-05-16 2009-05-15 加工品の破壊を防止する方法および装置 Active JP5718809B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7176408P 2008-05-16 2008-05-16
US61/071,764 2008-05-16
PCT/CA2009/000681 WO2009137940A1 (en) 2008-05-16 2009-05-15 Workpiece breakage prevention method and apparatus

Publications (3)

Publication Number Publication Date
JP2011522400A JP2011522400A (ja) 2011-07-28
JP2011522400A5 JP2011522400A5 (https=) 2012-07-05
JP5718809B2 true JP5718809B2 (ja) 2015-05-13

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JP2011508781A Active JP5718809B2 (ja) 2008-05-16 2009-05-15 加工品の破壊を防止する方法および装置

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US (1) US9070590B2 (https=)
JP (1) JP5718809B2 (https=)
KR (1) KR101610269B1 (https=)
CN (1) CN102089873A (https=)
WO (1) WO2009137940A1 (https=)

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CN102931117A (zh) * 2012-11-21 2013-02-13 苏州矽科信息科技有限公司 利用光反射原理测量晶圆传输中变形量的方法
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CN103627886B (zh) * 2013-12-16 2015-12-16 浙江大学 用于消除残余应力的电流脉冲控制系统
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KR102093825B1 (ko) * 2015-12-30 2020-03-27 맷슨 테크놀로지, 인크. 밀리세컨드 어닐 시스템 내의 기판 지지체
US10359334B2 (en) * 2015-12-30 2019-07-23 Mattson Technology, Inc. Fluid leakage detection for a millisecond anneal system
KR101800273B1 (ko) * 2016-01-13 2017-11-22 에스케이실트론 주식회사 웨이퍼 분석 방법
KR102618813B1 (ko) * 2016-01-27 2023-12-27 삼성전자주식회사 공정 챔버 모니터링 장치
JP6658051B2 (ja) * 2016-02-16 2020-03-04 三菱電機株式会社 ウエハの検査装置、ウエハの検査方法および半導体装置の製造方法
FR3066816B1 (fr) 2017-05-24 2020-09-04 Centre Nat Rech Scient Dispositif optique de mesure de la courbure d'une surface reflechissante
FI127730B (en) 2017-10-06 2019-01-15 Oy Mapvision Ltd Measurement system with heat measurement
US10337852B1 (en) * 2017-12-18 2019-07-02 Kla-Tencor Corporation Method for measuring positions of structures on a substrate and computer program product for determining positions of structures on a substrate
JP2021522676A (ja) * 2018-05-04 2021-08-30 ザ ガバメント オブ ザ ユナイテッド ステイツ オブ アメリカ， アズ リプレゼンテッド バイ ザ セクレタリー オブ ザ ネイビー ワイドバンドギャップ半導体エレクトロニクスのための注入ドーパント活性化
SG11202010093QA (en) * 2018-05-07 2020-11-27 Applied Materials Inc Substrate deformation detection and correction
JP6975687B2 (ja) * 2018-06-20 2021-12-01 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP7655641B2 (ja) * 2021-05-21 2025-04-02 東京エレクトロン株式会社 接合方法、及び接合装置
FR3128018B1 (fr) * 2021-10-11 2023-10-27 Riber Instrument et procédé de mesure de courbure d’une surface d’un échantillon
JP7726838B2 (ja) * 2022-04-12 2025-08-20 株式会社Ｓｃｒｅｅｎホールディングス 温度測定方法および熱処理システム

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US9070590B2 (en) 2015-06-30
CN102089873A (zh) 2011-06-08
JP2011522400A (ja) 2011-07-28
KR20110050405A (ko) 2011-05-13
KR101610269B1 (ko) 2016-04-07
US20110177624A1 (en) 2011-07-21

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