JPS5780729A - Annealing device for semiconductor - Google Patents

Annealing device for semiconductor

Info

Publication number
JPS5780729A
JPS5780729A JP15706180A JP15706180A JPS5780729A JP S5780729 A JPS5780729 A JP S5780729A JP 15706180 A JP15706180 A JP 15706180A JP 15706180 A JP15706180 A JP 15706180A JP S5780729 A JPS5780729 A JP S5780729A
Authority
JP
Japan
Prior art keywords
semiconductor
temperature
defect
heating
annealing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15706180A
Other languages
Japanese (ja)
Inventor
Yoshio Machi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKYO DENKI DAIGAKU
TOUKIYOU DENKI DAIGAKU
Original Assignee
TOKYO DENKI DAIGAKU
TOUKIYOU DENKI DAIGAKU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOKYO DENKI DAIGAKU, TOUKIYOU DENKI DAIGAKU filed Critical TOKYO DENKI DAIGAKU
Priority to JP15706180A priority Critical patent/JPS5780729A/en
Publication of JPS5780729A publication Critical patent/JPS5780729A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To recover a defect of a semiconductor by heating at a low temperature for a short time by heating the semiconductor at the prescribed temperature and emitting a flash light. CONSTITUTION:An Si semiconductor having a defect is heated to the prescribed temperature of 300-1,200 deg.C in non-oxidative gas atmosphere, and is emitted more than once by flash light of a xenon lamp. Since the Si semiconductor absorbs the flash to heat itself at this time, the defect can be abruptly recovered at a lower temperature than the conventioal temperature.
JP15706180A 1980-11-10 1980-11-10 Annealing device for semiconductor Pending JPS5780729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15706180A JPS5780729A (en) 1980-11-10 1980-11-10 Annealing device for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15706180A JPS5780729A (en) 1980-11-10 1980-11-10 Annealing device for semiconductor

Publications (1)

Publication Number Publication Date
JPS5780729A true JPS5780729A (en) 1982-05-20

Family

ID=15641348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15706180A Pending JPS5780729A (en) 1980-11-10 1980-11-10 Annealing device for semiconductor

Country Status (1)

Country Link
JP (1) JPS5780729A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649261A (en) * 1984-02-28 1987-03-10 Tamarack Scientific Co., Inc. Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4698486A (en) * 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
US6897130B2 (en) 2001-12-13 2005-05-24 Ushio Denki Kabushiki Kaisya Method for thermal processing semiconductor wafer with a flash discharge lamp after preheating to a predetermined temperature
US7781947B2 (en) 2004-02-12 2010-08-24 Mattson Technology Canada, Inc. Apparatus and methods for producing electromagnetic radiation
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus
JP2016189435A (en) * 2015-03-30 2016-11-04 信越半導体株式会社 Method for manufacturing epitaxial wafer
US9627244B2 (en) 2002-12-20 2017-04-18 Mattson Technology, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649261A (en) * 1984-02-28 1987-03-10 Tamarack Scientific Co., Inc. Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4698486A (en) * 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
US6941063B2 (en) 2000-12-04 2005-09-06 Mattson Technology Canada, Inc. Heat-treating methods and systems
US6963692B2 (en) 2000-12-04 2005-11-08 Vortek Industries Ltd. Heat-treating methods and systems
US6897130B2 (en) 2001-12-13 2005-05-24 Ushio Denki Kabushiki Kaisya Method for thermal processing semiconductor wafer with a flash discharge lamp after preheating to a predetermined temperature
CN1294632C (en) * 2001-12-13 2007-01-10 优志旺电机株式会社 Heat treating method for semiconductor crystal wafers
US9627244B2 (en) 2002-12-20 2017-04-18 Mattson Technology, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece
US7781947B2 (en) 2004-02-12 2010-08-24 Mattson Technology Canada, Inc. Apparatus and methods for producing electromagnetic radiation
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus
JP2016189435A (en) * 2015-03-30 2016-11-04 信越半導体株式会社 Method for manufacturing epitaxial wafer

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