JP5639052B2 - ウェハレベルでの縁部の積重ね - Google Patents
ウェハレベルでの縁部の積重ね Download PDFInfo
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- JP5639052B2 JP5639052B2 JP2011514614A JP2011514614A JP5639052B2 JP 5639052 B2 JP5639052 B2 JP 5639052B2 JP 2011514614 A JP2011514614 A JP 2011514614A JP 2011514614 A JP2011514614 A JP 2011514614A JP 5639052 B2 JP5639052 B2 JP 5639052B2
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- microelectronic device
- conductive element
- die
- microelectronic
- edge
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
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- H—ELECTRICITY
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
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- H—ELECTRICITY
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/652—Cross-sectional shapes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/652—Cross-sectional shapes
- H10W70/6523—Cross-sectional shapes for connecting to pads at different heights at the same side of the package substrate, interposer or RDL
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/652—Cross-sectional shapes
- H10W70/6528—Cross-sectional shapes of the portions that connect to chips, wafers or package parts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/654—Top-view layouts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01904—Manufacture or treatment of bond pads using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
- H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/801—Interconnections on sidewalls of containers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/834—Interconnections on sidewalls of chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/922—Bond pads being integral with underlying chip-level interconnections
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/934—Cross-sectional shape, i.e. in side view
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/944—Dispositions of multiple bond pads
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/944—Dispositions of multiple bond pads
- H10W72/9445—Top-view layouts, e.g. mirror arrays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W80/00—Direct bonding of chips, wafers or substrates
- H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
- H10W80/743—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding having disposition changed during the connecting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/22—Configurations of stacked chips the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/271—Configurations of stacked chips the chips having passive surfaces facing each other, i.e. in a back-to-back arrangement
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
- H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
Landscapes
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6195308P | 2008-06-16 | 2008-06-16 | |
| US61/061,953 | 2008-06-16 | ||
| PCT/US2009/003643 WO2009154761A1 (en) | 2008-06-16 | 2009-06-15 | Stacking of wafer-level chip scale packages having edge contacts |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011524647A JP2011524647A (ja) | 2011-09-01 |
| JP2011524647A5 JP2011524647A5 (https=) | 2012-07-19 |
| JP5639052B2 true JP5639052B2 (ja) | 2014-12-10 |
Family
ID=40974425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011514614A Active JP5639052B2 (ja) | 2008-06-16 | 2009-06-15 | ウェハレベルでの縁部の積重ね |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8680662B2 (https=) |
| EP (1) | EP2308087B1 (https=) |
| JP (1) | JP5639052B2 (https=) |
| KR (1) | KR101655897B1 (https=) |
| CN (1) | CN102067310B (https=) |
| TW (1) | TWI425611B (https=) |
| WO (1) | WO2009154761A1 (https=) |
Families Citing this family (70)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7215018B2 (en) | 2004-04-13 | 2007-05-08 | Vertical Circuits, Inc. | Stacked die BGA or LGA component assembly |
| US8513789B2 (en) | 2006-10-10 | 2013-08-20 | Tessera, Inc. | Edge connect wafer level stacking with leads extending along edges |
| US7829438B2 (en) | 2006-10-10 | 2010-11-09 | Tessera, Inc. | Edge connect wafer level stacking |
| US7901989B2 (en) | 2006-10-10 | 2011-03-08 | Tessera, Inc. | Reconstituted wafer level stacking |
| US7952195B2 (en) | 2006-12-28 | 2011-05-31 | Tessera, Inc. | Stacked packages with bridging traces |
| US8723332B2 (en) | 2007-06-11 | 2014-05-13 | Invensas Corporation | Electrically interconnected stacked die assemblies |
| CN101809739B (zh) | 2007-07-27 | 2014-08-20 | 泰塞拉公司 | 具有后应用的衬垫延长部分的重构晶片堆封装 |
| CN101861646B (zh) | 2007-08-03 | 2015-03-18 | 泰塞拉公司 | 利用再生晶圆的堆叠封装 |
| US8043895B2 (en) | 2007-08-09 | 2011-10-25 | Tessera, Inc. | Method of fabricating stacked assembly including plurality of stacked microelectronic elements |
| US8704379B2 (en) | 2007-09-10 | 2014-04-22 | Invensas Corporation | Semiconductor die mount by conformal die coating |
| US8178978B2 (en) | 2008-03-12 | 2012-05-15 | Vertical Circuits, Inc. | Support mounted electrically interconnected die assembly |
| US9153517B2 (en) * | 2008-05-20 | 2015-10-06 | Invensas Corporation | Electrical connector between die pad and z-interconnect for stacked die assemblies |
| US7863159B2 (en) | 2008-06-19 | 2011-01-04 | Vertical Circuits, Inc. | Semiconductor die separation method |
| KR101655897B1 (ko) | 2008-06-16 | 2016-09-08 | 테세라, 인코포레이티드 | 마이크로전자 조립체 및 적층형 마이크로전자 조립체의 제조 방법 |
| TWI446498B (zh) | 2009-03-13 | 2014-07-21 | 泰斯拉公司 | 具有延伸穿越銲墊之通孔的堆疊微電子總成 |
| CN102473697B (zh) | 2009-06-26 | 2016-08-10 | 伊文萨思公司 | 曲折配置的堆叠裸片的电互连 |
| US8242543B2 (en) * | 2009-08-26 | 2012-08-14 | Qualcomm Incorporated | Semiconductor wafer-to-wafer bonding for dissimilar semiconductor dies and/or wafers |
| WO2011056668A2 (en) | 2009-10-27 | 2011-05-12 | Vertical Circuits, Inc. | Selective die electrical insulation additive process |
| TWI544604B (zh) | 2009-11-04 | 2016-08-01 | 英維瑟斯公司 | 具有降低應力電互連的堆疊晶粒總成 |
| US20110221053A1 (en) * | 2010-03-11 | 2011-09-15 | Qualcomm Incorporated | Pre-processing to reduce wafer level warpage |
| US8796137B2 (en) * | 2010-06-24 | 2014-08-05 | Stats Chippac, Ltd. | Semiconductor device and method of forming RDL along sloped side surface of semiconductor die for z-direction interconnect |
| US8482111B2 (en) | 2010-07-19 | 2013-07-09 | Tessera, Inc. | Stackable molded microelectronic packages |
| KR101128063B1 (ko) | 2011-05-03 | 2012-04-23 | 테세라, 인코포레이티드 | 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리 |
| US11830845B2 (en) | 2011-05-03 | 2023-11-28 | Tessera Llc | Package-on-package assembly with wire bonds to encapsulation surface |
| US8836136B2 (en) | 2011-10-17 | 2014-09-16 | Invensas Corporation | Package-on-package assembly with wire bond vias |
| US8946757B2 (en) | 2012-02-17 | 2015-02-03 | Invensas Corporation | Heat spreading substrate with embedded interconnects |
| US8372741B1 (en) | 2012-02-24 | 2013-02-12 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
| US8835228B2 (en) | 2012-05-22 | 2014-09-16 | Invensas Corporation | Substrate-less stackable package with wire-bond interconnect |
| CN103515257A (zh) * | 2012-06-18 | 2014-01-15 | 智瑞达科技(苏州)有限公司 | 高密度半导体封装结构的封装方法 |
| US9391008B2 (en) * | 2012-07-31 | 2016-07-12 | Invensas Corporation | Reconstituted wafer-level package DRAM |
| US9502390B2 (en) | 2012-08-03 | 2016-11-22 | Invensas Corporation | BVA interposer |
| US20140306331A1 (en) * | 2013-04-11 | 2014-10-16 | Infineon Technologies Austria Ag | Chip and chip arrangement |
| US20140326856A1 (en) * | 2013-05-06 | 2014-11-06 | Omnivision Technologies, Inc. | Integrated circuit stack with low profile contacts |
| US9167710B2 (en) | 2013-08-07 | 2015-10-20 | Invensas Corporation | Embedded packaging with preformed vias |
| US9685365B2 (en) | 2013-08-08 | 2017-06-20 | Invensas Corporation | Method of forming a wire bond having a free end |
| US20150076714A1 (en) | 2013-09-16 | 2015-03-19 | Invensas Corporation | Microelectronic element with bond elements to encapsulation surface |
| US9379074B2 (en) | 2013-11-22 | 2016-06-28 | Invensas Corporation | Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects |
| US9263394B2 (en) | 2013-11-22 | 2016-02-16 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
| US9583456B2 (en) | 2013-11-22 | 2017-02-28 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
| US9583411B2 (en) | 2014-01-17 | 2017-02-28 | Invensas Corporation | Fine pitch BVA using reconstituted wafer with area array accessible for testing |
| US10381326B2 (en) | 2014-05-28 | 2019-08-13 | Invensas Corporation | Structure and method for integrated circuits packaging with increased density |
| US9735084B2 (en) | 2014-12-11 | 2017-08-15 | Invensas Corporation | Bond via array for thermal conductivity |
| US9888579B2 (en) | 2015-03-05 | 2018-02-06 | Invensas Corporation | Pressing of wire bond wire tips to provide bent-over tips |
| US9502372B1 (en) | 2015-04-30 | 2016-11-22 | Invensas Corporation | Wafer-level packaging using wire bond wires in place of a redistribution layer |
| US9761554B2 (en) | 2015-05-07 | 2017-09-12 | Invensas Corporation | Ball bonding metal wire bond wires to metal pads |
| US9490195B1 (en) | 2015-07-17 | 2016-11-08 | Invensas Corporation | Wafer-level flipped die stacks with leadframes or metal foil interconnects |
| US9871019B2 (en) | 2015-07-17 | 2018-01-16 | Invensas Corporation | Flipped die stack assemblies with leadframe interconnects |
| US9825002B2 (en) | 2015-07-17 | 2017-11-21 | Invensas Corporation | Flipped die stack |
| US10490528B2 (en) | 2015-10-12 | 2019-11-26 | Invensas Corporation | Embedded wire bond wires |
| US9490222B1 (en) | 2015-10-12 | 2016-11-08 | Invensas Corporation | Wire bond wires for interference shielding |
| US10332854B2 (en) | 2015-10-23 | 2019-06-25 | Invensas Corporation | Anchoring structure of fine pitch bva |
| US10181457B2 (en) | 2015-10-26 | 2019-01-15 | Invensas Corporation | Microelectronic package for wafer-level chip scale packaging with fan-out |
| US10043779B2 (en) | 2015-11-17 | 2018-08-07 | Invensas Corporation | Packaged microelectronic device for a package-on-package device |
| US9659848B1 (en) | 2015-11-18 | 2017-05-23 | Invensas Corporation | Stiffened wires for offset BVA |
| US11037904B2 (en) * | 2015-11-24 | 2021-06-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Singulation and bonding methods and structures formed thereby |
| US9508691B1 (en) | 2015-12-16 | 2016-11-29 | Invensas Corporation | Flipped die stacks with multiple rows of leadframe interconnects |
| US9984992B2 (en) | 2015-12-30 | 2018-05-29 | Invensas Corporation | Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces |
| US10566310B2 (en) | 2016-04-11 | 2020-02-18 | Invensas Corporation | Microelectronic packages having stacked die and wire bond interconnects |
| US9595511B1 (en) | 2016-05-12 | 2017-03-14 | Invensas Corporation | Microelectronic packages and assemblies with improved flyby signaling operation |
| US9728524B1 (en) | 2016-06-30 | 2017-08-08 | Invensas Corporation | Enhanced density assembly having microelectronic packages mounted at substantial angle to board |
| US9935075B2 (en) | 2016-07-29 | 2018-04-03 | Invensas Corporation | Wire bonding method and apparatus for electromagnetic interference shielding |
| US9996725B2 (en) * | 2016-11-03 | 2018-06-12 | Optiz, Inc. | Under screen sensor assembly |
| WO2018105201A1 (ja) * | 2016-12-08 | 2018-06-14 | 株式会社村田製作所 | 複合部品及びその実装構造 |
| US10299368B2 (en) | 2016-12-21 | 2019-05-21 | Invensas Corporation | Surface integrated waveguides and circuit structures therefor |
| DE102017109670B4 (de) * | 2017-05-05 | 2019-12-24 | Infineon Technologies Ag | Herstellungsverfahren für ein Chippackage mit Seitenwandmetallisierung |
| US12506055B2 (en) | 2017-11-29 | 2025-12-23 | Pep Innovation Pte. Ltd. | Chip packaging method and chip structure |
| KR102435517B1 (ko) * | 2018-04-12 | 2022-08-22 | 에스케이하이닉스 주식회사 | 칩 스택 패키지 |
| CN210223952U (zh) * | 2019-03-26 | 2020-03-31 | Pep创新私人有限公司 | 面板组件、晶圆封装体以及芯片封装体 |
| US11393791B2 (en) * | 2020-01-28 | 2022-07-19 | Micron Technology, Inc. | Three-dimensional stacking semiconductor assemblies with near zero bond line thickness |
| JP2022049485A (ja) | 2020-09-16 | 2022-03-29 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (253)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4074342A (en) | 1974-12-20 | 1978-02-14 | International Business Machines Corporation | Electrical package for lsi devices and assembly process therefor |
| US4500905A (en) | 1981-09-30 | 1985-02-19 | Tokyo Shibaura Denki Kabushiki Kaisha | Stacked semiconductor device with sloping sides |
| US4897708A (en) | 1986-07-17 | 1990-01-30 | Laser Dynamics, Inc. | Semiconductor wafer array |
| US4954875A (en) | 1986-07-17 | 1990-09-04 | Laser Dynamics, Inc. | Semiconductor wafer array with electrically conductive compliant material |
| US4765864A (en) | 1987-07-15 | 1988-08-23 | Sri International | Etching method for producing an electrochemical cell in a crystalline substrate |
| US4842699A (en) | 1988-05-10 | 1989-06-27 | Avantek, Inc. | Method of selective via-hole and heat sink plating using a metal mask |
| JP2876773B2 (ja) * | 1990-10-22 | 1999-03-31 | セイコーエプソン株式会社 | プログラム命令語長可変型計算装置及びデータ処理装置 |
| US5614766A (en) | 1991-09-30 | 1997-03-25 | Rohm Co., Ltd. | Semiconductor device with stacked alternate-facing chips |
| AU4242693A (en) | 1992-05-11 | 1993-12-13 | Nchip, Inc. | Stacked devices for multichip modules |
| US5322816A (en) | 1993-01-19 | 1994-06-21 | Hughes Aircraft Company | Method for forming deep conductive feedthroughs |
| US5426072A (en) | 1993-01-21 | 1995-06-20 | Hughes Aircraft Company | Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate |
| FR2704690B1 (fr) | 1993-04-27 | 1995-06-23 | Thomson Csf | Procédé d'encapsulation de pastilles semi-conductrices, dispositif obtenu par ce procédé et application à l'interconnexion de pastilles en trois dimensions. |
| US5343071A (en) | 1993-04-28 | 1994-08-30 | Raytheon Company | Semiconductor structures having dual surface via holes |
| DE4314907C1 (de) | 1993-05-05 | 1994-08-25 | Siemens Ag | Verfahren zur Herstellung von vertikal miteinander elektrisch leitend kontaktierten Halbleiterbauelementen |
| IL106892A0 (en) | 1993-09-02 | 1993-12-28 | Pierre Badehi | Methods and apparatus for producing integrated circuit devices |
| US5412539A (en) | 1993-10-18 | 1995-05-02 | Hughes Aircraft Company | Multichip module with a mandrel-produced interconnecting decal |
| US5424245A (en) | 1994-01-04 | 1995-06-13 | Motorola, Inc. | Method of forming vias through two-sided substrate |
| IL108359A (en) | 1994-01-17 | 2001-04-30 | Shellcase Ltd | Method and apparatus for producing integrated circuit devices |
| US5502333A (en) | 1994-03-30 | 1996-03-26 | International Business Machines Corporation | Semiconductor stack structures and fabrication/sparing methods utilizing programmable spare circuit |
| US5675180A (en) | 1994-06-23 | 1997-10-07 | Cubic Memory, Inc. | Vertical interconnect process for silicon segments |
| US6228686B1 (en) * | 1995-09-18 | 2001-05-08 | Tessera, Inc. | Method of fabricating a microelectronic assembly using sheets with gaps to define lead regions |
| IL110261A0 (en) | 1994-07-10 | 1994-10-21 | Schellcase Ltd | Packaged integrated circuit |
| US5880010A (en) | 1994-07-12 | 1999-03-09 | Sun Microsystems, Inc. | Ultrathin electronics |
| MY114888A (en) | 1994-08-22 | 2003-02-28 | Ibm | Method for forming a monolithic electronic module by stacking planar arrays of integrated circuit chips |
| DE4433845A1 (de) | 1994-09-22 | 1996-03-28 | Fraunhofer Ges Forschung | Verfahren zur Herstellung einer dreidimensionalen integrierten Schaltung |
| DE4433846C2 (de) | 1994-09-22 | 1999-06-02 | Fraunhofer Ges Forschung | Verfahren zur Herstellung einer vertikalen integrierten Schaltungsstruktur |
| US5466634A (en) | 1994-12-20 | 1995-11-14 | International Business Machines Corporation | Electronic modules with interconnected surface metallization layers and fabrication methods therefore |
| DE19516487C1 (de) | 1995-05-05 | 1996-07-25 | Fraunhofer Ges Forschung | Verfahren zur vertikalen Integration mikroelektronischer Systeme |
| US5682062A (en) | 1995-06-05 | 1997-10-28 | Harris Corporation | System for interconnecting stacked integrated circuits |
| US5618752A (en) | 1995-06-05 | 1997-04-08 | Harris Corporation | Method of fabrication of surface mountable integrated circuits |
| US5646067A (en) | 1995-06-05 | 1997-07-08 | Harris Corporation | Method of bonding wafers having vias including conductive material |
| US5608264A (en) | 1995-06-05 | 1997-03-04 | Harris Corporation | Surface mountable integrated circuit with conductive vias |
| US5814889A (en) | 1995-06-05 | 1998-09-29 | Harris Corporation | Intergrated circuit with coaxial isolation and method |
| US5604673A (en) | 1995-06-07 | 1997-02-18 | Hughes Electronics | Low temperature co-fired ceramic substrates for power converters |
| US5648684A (en) | 1995-07-26 | 1997-07-15 | International Business Machines Corporation | Endcap chip with conductive, monolithic L-connect for multichip stack |
| US6002167A (en) | 1995-09-22 | 1999-12-14 | Hitachi Cable, Ltd. | Semiconductor device having lead on chip structure |
| JP2743904B2 (ja) | 1996-02-16 | 1998-04-28 | 日本電気株式会社 | 半導体基板およびこれを用いた半導体装置の製造方法 |
| US5817530A (en) | 1996-05-20 | 1998-10-06 | Micron Technology, Inc. | Use of conductive lines on the back side of wafers and dice for semiconductor interconnects |
| US6784023B2 (en) | 1996-05-20 | 2004-08-31 | Micron Technology, Inc. | Method of fabrication of stacked semiconductor devices |
| JP3620936B2 (ja) | 1996-10-11 | 2005-02-16 | 浜松ホトニクス株式会社 | 裏面照射型受光デバイスおよびその製造方法 |
| KR100214562B1 (ko) | 1997-03-24 | 1999-08-02 | 구본준 | 적층 반도체 칩 패키지 및 그 제조 방법 |
| US5915167A (en) | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
| US6551857B2 (en) | 1997-04-04 | 2003-04-22 | Elm Technology Corporation | Three dimensional structure integrated circuits |
| EP0926723B1 (en) | 1997-11-26 | 2007-01-17 | STMicroelectronics S.r.l. | Process for forming front-back through contacts in micro-integrated electronic devices |
| US6620731B1 (en) | 1997-12-18 | 2003-09-16 | Micron Technology, Inc. | Method for fabricating semiconductor components and interconnects with contacts on opposing sides |
| IL123207A0 (en) * | 1998-02-06 | 1998-09-24 | Shellcase Ltd | Integrated circuit device |
| US6624505B2 (en) | 1998-02-06 | 2003-09-23 | Shellcase, Ltd. | Packaged integrated circuits and methods of producing thereof |
| JP4538107B2 (ja) | 1998-03-02 | 2010-09-08 | エヌエックスピー ビー ヴィ | 半導体素子及び金属化層を有する絶縁層が接着剤により取付られているガラス支持体を有する半導体装置 |
| US6982475B1 (en) | 1998-03-20 | 2006-01-03 | Mcsp, Llc | Hermetic wafer scale integrated circuit structure |
| KR100266693B1 (ko) | 1998-05-30 | 2000-09-15 | 김영환 | 적층가능한 비지에이 반도체 칩 패키지 및 그 제조방법 |
| US6492201B1 (en) | 1998-07-10 | 2002-12-10 | Tessera, Inc. | Forming microelectronic connection components by electrophoretic deposition |
| US6103552A (en) | 1998-08-10 | 2000-08-15 | Lin; Mou-Shiung | Wafer scale packaging scheme |
| US6153929A (en) | 1998-08-21 | 2000-11-28 | Micron Technology, Inc. | Low profile multi-IC package connector |
| US6261865B1 (en) | 1998-10-06 | 2001-07-17 | Micron Technology, Inc. | Multi chip semiconductor package and method of construction |
| KR100304959B1 (ko) | 1998-10-21 | 2001-09-24 | 김영환 | 칩 적층형 반도체 패키지 및 그 제조방법 |
| SG78324A1 (en) | 1998-12-17 | 2001-02-20 | Eriston Technologies Pte Ltd | Bumpless flip chip assembly with strips-in-via and plating |
| US6229216B1 (en) | 1999-01-11 | 2001-05-08 | Intel Corporation | Silicon interposer and multi-chip-module (MCM) with through substrate vias |
| JP3228257B2 (ja) | 1999-01-22 | 2001-11-12 | 日本電気株式会社 | メモリパッケージ |
| US6130823A (en) | 1999-02-01 | 2000-10-10 | Raytheon E-Systems, Inc. | Stackable ball grid array module and method |
| US6204562B1 (en) | 1999-02-11 | 2001-03-20 | United Microelectronics Corp. | Wafer-level chip scale package |
| EP1041624A1 (en) | 1999-04-02 | 2000-10-04 | Interuniversitair Microelektronica Centrum Vzw | Method of transferring ultra-thin substrates and application of the method to the manufacture of a multilayer thin film device |
| JP3532788B2 (ja) | 1999-04-13 | 2004-05-31 | 唯知 須賀 | 半導体装置及びその製造方法 |
| US20030233704A1 (en) | 2000-04-17 | 2003-12-25 | Miguel Castellote | Air massage system for bathtub |
| US6548391B1 (en) | 1999-05-27 | 2003-04-15 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E. V. | Method of vertically integrating electric components by means of back contacting |
| JP2001035995A (ja) | 1999-07-22 | 2001-02-09 | Seiko Epson Corp | 半導体チップの貫通孔形成方法 |
| WO2001015228A1 (en) * | 1999-08-19 | 2001-03-01 | Seiko Epson Corporation | Wiring board, method of manufacturing wiring board, electronic device, method of manufacturing electronic device, circuit board and electronic apparatus |
| US6277669B1 (en) | 1999-09-15 | 2001-08-21 | Industrial Technology Research Institute | Wafer level packaging method and packages formed |
| JP2001156250A (ja) * | 1999-11-24 | 2001-06-08 | Seiko Epson Corp | 半導体チップ、マルチチップパッケージ,および半導体装置と、並びに、それを用いた電子機器 |
| IL133453A0 (en) | 1999-12-10 | 2001-04-30 | Shellcase Ltd | Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby |
| US6621155B1 (en) | 1999-12-23 | 2003-09-16 | Rambus Inc. | Integrated circuit device having stacked dies and impedance balanced transmission lines |
| US6376904B1 (en) | 1999-12-23 | 2002-04-23 | Rambus Inc. | Redistributed bond pads in stacked integrated circuit die package |
| JP3879351B2 (ja) | 2000-01-27 | 2007-02-14 | セイコーエプソン株式会社 | 半導体チップの製造方法 |
| JP3684978B2 (ja) | 2000-02-03 | 2005-08-17 | セイコーエプソン株式会社 | 半導体装置およびその製造方法ならびに電子機器 |
| JP2001223323A (ja) | 2000-02-10 | 2001-08-17 | Mitsubishi Electric Corp | 半導体装置 |
| US6498387B1 (en) | 2000-02-15 | 2002-12-24 | Wen-Ken Yang | Wafer level package and the process of the same |
| US6252305B1 (en) | 2000-02-29 | 2001-06-26 | Advanced Semiconductor Engineering, Inc. | Multichip module having a stacked chip arrangement |
| US6344401B1 (en) | 2000-03-09 | 2002-02-05 | Atmel Corporation | Method of forming a stacked-die integrated circuit chip package on a water level |
| US6396710B1 (en) | 2000-05-12 | 2002-05-28 | Raytheon Company | High density interconnect module |
| JP3879816B2 (ja) | 2000-06-02 | 2007-02-14 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、積層型半導体装置、回路基板並びに電子機器 |
| US6472247B1 (en) | 2000-06-26 | 2002-10-29 | Ricoh Company, Ltd. | Solid-state imaging device and method of production of the same |
| JP3405456B2 (ja) * | 2000-09-11 | 2003-05-12 | 沖電気工業株式会社 | 半導体装置,半導体装置の製造方法,スタック型半導体装置及びスタック型半導体装置の製造方法 |
| US6693358B2 (en) | 2000-10-23 | 2004-02-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor chip, wiring board and manufacturing process thereof as well as semiconductor device |
| JP3433193B2 (ja) * | 2000-10-23 | 2003-08-04 | 松下電器産業株式会社 | 半導体チップおよびその製造方法 |
| JP4505983B2 (ja) | 2000-12-01 | 2010-07-21 | 日本電気株式会社 | 半導体装置 |
| JP3420748B2 (ja) | 2000-12-14 | 2003-06-30 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
| JP2002184937A (ja) | 2000-12-18 | 2002-06-28 | Shinko Electric Ind Co Ltd | 半導体装置の実装構造 |
| US20020074637A1 (en) | 2000-12-19 | 2002-06-20 | Intel Corporation | Stacked flip chip assemblies |
| AU2002216352A1 (en) | 2000-12-21 | 2002-07-01 | Shellcase Ltd. | Packaged integrated circuits and methods of producing thereof |
| JP3915513B2 (ja) | 2001-01-12 | 2007-05-16 | コニカミノルタホールディングス株式会社 | 撮像装置 |
| US20020098620A1 (en) | 2001-01-24 | 2002-07-25 | Yi-Chuan Ding | Chip scale package and manufacturing method thereof |
| KR100352236B1 (ko) | 2001-01-30 | 2002-09-12 | 삼성전자 주식회사 | 접지 금속층을 갖는 웨이퍼 레벨 패키지 |
| WO2002063681A1 (fr) | 2001-02-08 | 2002-08-15 | Hitachi, Ltd. | Dispositif de circuit integre a semi-conducteur et son procede de fabrication |
| KR100364635B1 (ko) | 2001-02-09 | 2002-12-16 | 삼성전자 주식회사 | 칩-레벨에 형성된 칩 선택용 패드를 포함하는 칩-레벨3차원 멀티-칩 패키지 및 그 제조 방법 |
| US6498381B2 (en) | 2001-02-22 | 2002-12-24 | Tru-Si Technologies, Inc. | Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same |
| US6717254B2 (en) | 2001-02-22 | 2004-04-06 | Tru-Si Technologies, Inc. | Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture |
| US7115986B2 (en) * | 2001-05-02 | 2006-10-03 | Micron Technology, Inc. | Flexible ball grid array chip scale packages |
| US6528408B2 (en) | 2001-05-21 | 2003-03-04 | Micron Technology, Inc. | Method for bumped die and wire bonded board-on-chip package |
| JP3651413B2 (ja) | 2001-05-21 | 2005-05-25 | 日立電線株式会社 | 半導体装置用テープキャリア及びそれを用いた半導体装置、半導体装置用テープキャリアの製造方法及び半導体装置の製造方法 |
| US6878608B2 (en) | 2001-05-31 | 2005-04-12 | International Business Machines Corporation | Method of manufacture of silicon based package |
| US20030006494A1 (en) | 2001-07-03 | 2003-01-09 | Lee Sang Ho | Thin profile stackable semiconductor package and method for manufacturing |
| JP3660918B2 (ja) * | 2001-07-04 | 2005-06-15 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
| KR100394808B1 (ko) | 2001-07-19 | 2003-08-14 | 삼성전자주식회사 | 웨이퍼 레벨 적층 칩 패키지 및 그 제조 방법 |
| US6787916B2 (en) | 2001-09-13 | 2004-09-07 | Tru-Si Technologies, Inc. | Structures having a substrate with a cavity and having an integrated circuit bonded to a contact pad located in the cavity |
| US6727576B2 (en) | 2001-10-31 | 2004-04-27 | Infineon Technologies Ag | Transfer wafer level packaging |
| US6611052B2 (en) | 2001-11-16 | 2003-08-26 | Micron Technology, Inc. | Wafer level stackable semiconductor package |
| JP2003163324A (ja) | 2001-11-27 | 2003-06-06 | Nec Corp | ユニット半導体装置及びその製造方法並びに3次元積層型半導体装置 |
| US6607941B2 (en) | 2002-01-11 | 2003-08-19 | National Semiconductor Corporation | Process and structure improvements to shellcase style packaging technology |
| US6743660B2 (en) | 2002-01-12 | 2004-06-01 | Taiwan Semiconductor Manufacturing Co., Ltd | Method of making a wafer level chip scale package |
| JP4002106B2 (ja) | 2002-01-16 | 2007-10-31 | 日立オムロンターミナルソリューションズ株式会社 | 自動取引装置 |
| KR100486832B1 (ko) | 2002-02-06 | 2005-05-03 | 삼성전자주식회사 | 반도체 칩과 적층 칩 패키지 및 그 제조 방법 |
| US6806559B2 (en) | 2002-04-22 | 2004-10-19 | Irvine Sensors Corporation | Method and apparatus for connecting vertically stacked integrated circuit chips |
| TWI232560B (en) | 2002-04-23 | 2005-05-11 | Sanyo Electric Co | Semiconductor device and its manufacture |
| JP2003318178A (ja) | 2002-04-24 | 2003-11-07 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
| US7340181B1 (en) * | 2002-05-13 | 2008-03-04 | National Semiconductor Corporation | Electrical die contact structure and fabrication method |
| TWI229435B (en) | 2002-06-18 | 2005-03-11 | Sanyo Electric Co | Manufacture of semiconductor device |
| JP4215571B2 (ja) | 2002-06-18 | 2009-01-28 | 三洋電機株式会社 | 半導体装置の製造方法 |
| US6984545B2 (en) | 2002-07-22 | 2006-01-10 | Micron Technology, Inc. | Methods of encapsulating selected locations of a semiconductor die assembly using a thick solder mask |
| JP2004063569A (ja) | 2002-07-25 | 2004-02-26 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
| US6903442B2 (en) | 2002-08-29 | 2005-06-07 | Micron Technology, Inc. | Semiconductor component having backside pin contacts |
| US7329563B2 (en) | 2002-09-03 | 2008-02-12 | Industrial Technology Research Institute | Method for fabrication of wafer level package incorporating dual compliant layers |
| SE0202681D0 (sv) | 2002-09-10 | 2002-09-10 | Frank Niklaus | Hermetic sealing with combined adhesive bonding and sealing rings |
| US20040061213A1 (en) | 2002-09-17 | 2004-04-01 | Chippac, Inc. | Semiconductor multi-package module having package stacked over die-up flip chip ball grid array package and having wire bond interconnect between stacked packages |
| JP4081666B2 (ja) | 2002-09-24 | 2008-04-30 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
| US20040104454A1 (en) | 2002-10-10 | 2004-06-03 | Rohm Co., Ltd. | Semiconductor device and method of producing the same |
| TWI227050B (en) | 2002-10-11 | 2005-01-21 | Sanyo Electric Co | Semiconductor device and method for manufacturing the same |
| US6656827B1 (en) | 2002-10-17 | 2003-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electrical performance enhanced wafer level chip scale package with ground |
| US6869824B2 (en) | 2002-10-29 | 2005-03-22 | Ultratera Corporation | Fabrication method of window-type ball grid array semiconductor package |
| TWI227550B (en) | 2002-10-30 | 2005-02-01 | Sanyo Electric Co | Semiconductor device manufacturing method |
| JP2004153130A (ja) | 2002-10-31 | 2004-05-27 | Olympus Corp | 半導体装置及びその製造方法 |
| JP2004158536A (ja) | 2002-11-05 | 2004-06-03 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
| JP4056854B2 (ja) | 2002-11-05 | 2008-03-05 | 新光電気工業株式会社 | 半導体装置の製造方法 |
| DE10253163B4 (de) | 2002-11-14 | 2015-07-23 | Epcos Ag | Bauelement mit hermetischer Verkapselung und Waferscale Verfahren zur Herstellung |
| US20050012225A1 (en) | 2002-11-15 | 2005-01-20 | Choi Seung-Yong | Wafer-level chip scale package and method for fabricating and using the same |
| CN1650426A (zh) * | 2002-12-17 | 2005-08-03 | 富士通株式会社 | 半导体装置及叠层型半导体装置 |
| JP3566957B2 (ja) | 2002-12-24 | 2004-09-15 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
| KR20040059742A (ko) | 2002-12-30 | 2004-07-06 | 동부전자 주식회사 | 반도체용 멀티 칩 모듈의 패키징 방법 |
| WO2004064159A1 (ja) | 2003-01-15 | 2004-07-29 | Fujitsu Limited | 半導体装置及び三次元実装半導体装置、並びに半導体装置の製造方法 |
| JP3680839B2 (ja) | 2003-03-18 | 2005-08-10 | セイコーエプソン株式会社 | 半導体装置および半導体装置の製造方法 |
| JP3972846B2 (ja) | 2003-03-25 | 2007-09-05 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| EP1519410A1 (en) | 2003-09-25 | 2005-03-30 | Interuniversitair Microelektronica Centrum vzw ( IMEC) | Method for producing electrical through hole interconnects and devices made thereof |
| US6897148B2 (en) | 2003-04-09 | 2005-05-24 | Tru-Si Technologies, Inc. | Electroplating and electroless plating of conductive materials into openings, and structures obtained thereby |
| JP4373695B2 (ja) | 2003-04-16 | 2009-11-25 | 浜松ホトニクス株式会社 | 裏面照射型光検出装置の製造方法 |
| SG119185A1 (en) | 2003-05-06 | 2006-02-28 | Micron Technology Inc | Method for packaging circuits and packaged circuits |
| JP2004342862A (ja) * | 2003-05-16 | 2004-12-02 | Sony Corp | 半導体装置及びその製造方法、疑似ウェーハ及びその製造方法、並びにマルチチップモジュール |
| JP4130158B2 (ja) | 2003-06-09 | 2008-08-06 | 三洋電機株式会社 | 半導体装置の製造方法、半導体装置 |
| EP1482553A3 (en) | 2003-05-26 | 2007-03-28 | Sanyo Electric Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP1636842B1 (en) | 2003-06-03 | 2011-08-17 | Casio Computer Co., Ltd. | Stackable semiconductor device and method of manufacturing the same |
| US6972480B2 (en) | 2003-06-16 | 2005-12-06 | Shellcase Ltd. | Methods and apparatus for packaging integrated circuit devices |
| JP3646720B2 (ja) | 2003-06-19 | 2005-05-11 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
| US9530857B2 (en) | 2003-06-20 | 2016-12-27 | Tessera Advanced Technologies, Inc. | Electronic device, assembly and methods of manufacturing an electronic device including a vertical trench capacitor and a vertical interconnect |
| JP2007528120A (ja) * | 2003-07-03 | 2007-10-04 | テッセラ テクノロジーズ ハンガリー コルラートルト フェレロェセーギュー タールシャシャーグ | 集積回路装置をパッケージングする方法及び装置 |
| JP2005045073A (ja) | 2003-07-23 | 2005-02-17 | Hamamatsu Photonics Kk | 裏面入射型光検出素子 |
| KR100537892B1 (ko) | 2003-08-26 | 2005-12-21 | 삼성전자주식회사 | 칩 스택 패키지와 그 제조 방법 |
| US7180149B2 (en) | 2003-08-28 | 2007-02-20 | Fujikura Ltd. | Semiconductor package with through-hole |
| US7061085B2 (en) | 2003-09-19 | 2006-06-13 | Micron Technology, Inc. | Semiconductor component and system having stiffener and circuit decal |
| KR100594229B1 (ko) | 2003-09-19 | 2006-07-03 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
| JP2005101067A (ja) | 2003-09-22 | 2005-04-14 | Sharp Corp | 基板の配線構造および配線形成方法 |
| US20050095835A1 (en) | 2003-09-26 | 2005-05-05 | Tessera, Inc. | Structure and method of making capped chips having vertical interconnects |
| SG120123A1 (en) | 2003-09-30 | 2006-03-28 | Micron Technology Inc | Castellated chip-scale packages and methods for fabricating the same |
| KR100621992B1 (ko) | 2003-11-19 | 2006-09-13 | 삼성전자주식회사 | 이종 소자들의 웨이퍼 레벨 적층 구조와 방법 및 이를이용한 시스템-인-패키지 |
| US7049170B2 (en) | 2003-12-17 | 2006-05-23 | Tru-Si Technologies, Inc. | Integrated circuits and packaging substrates with cavities, and attachment methods including insertion of protruding contact pads into cavities |
| US7060601B2 (en) | 2003-12-17 | 2006-06-13 | Tru-Si Technologies, Inc. | Packaging substrates for integrated circuits and soldering methods |
| US20050156330A1 (en) | 2004-01-21 | 2005-07-21 | Harris James M. | Through-wafer contact to bonding pad |
| DE102004008135A1 (de) | 2004-02-18 | 2005-09-22 | Infineon Technologies Ag | Halbleiterbauteil mit einem Stapel aus Halbleiterchips und Verfahren zur Herstellung desselben |
| US7160753B2 (en) | 2004-03-16 | 2007-01-09 | Voxtel, Inc. | Silicon-on-insulator active pixel sensors |
| JP4285309B2 (ja) | 2004-04-13 | 2009-06-24 | パナソニック株式会社 | 電子回路モジュールの製造方法と多層電子回路モジュールおよびその製造方法 |
| US7215018B2 (en) | 2004-04-13 | 2007-05-08 | Vertical Circuits, Inc. | Stacked die BGA or LGA component assembly |
| US7952189B2 (en) | 2004-05-27 | 2011-05-31 | Chang-Feng Wan | Hermetic packaging and method of manufacture and use therefore |
| US7232754B2 (en) | 2004-06-29 | 2007-06-19 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
| JP4211696B2 (ja) | 2004-06-30 | 2009-01-21 | ソニー株式会社 | 固体撮像装置の製造方法 |
| KR100587081B1 (ko) | 2004-06-30 | 2006-06-08 | 주식회사 하이닉스반도체 | 개선된 열방출 특성을 갖는 반도체 패키지 |
| KR100605314B1 (ko) | 2004-07-22 | 2006-07-28 | 삼성전자주식회사 | 재배선 보호 피막을 가지는 웨이퍼 레벨 패키지의 제조 방법 |
| DE102004039906A1 (de) | 2004-08-18 | 2005-08-18 | Infineon Technologies Ag | Verfahren zur Herstellung eines elektronischen Bauelements sowie ein elektronisches Bauelement mit mindestens zwei integrierten Bausteinen |
| US20060043556A1 (en) | 2004-08-25 | 2006-03-02 | Chao-Yuan Su | Stacked packaging methods and structures |
| US7378342B2 (en) | 2004-08-27 | 2008-05-27 | Micron Technology, Inc. | Methods for forming vias varying lateral dimensions |
| US7129567B2 (en) | 2004-08-31 | 2006-10-31 | Micron Technology, Inc. | Substrate, semiconductor die, multichip module, and system including a via structure comprising a plurality of conductive elements |
| KR100604049B1 (ko) | 2004-09-01 | 2006-07-24 | 동부일렉트로닉스 주식회사 | 반도체 칩 패키지 및 그 제조방법 |
| JP2006073825A (ja) | 2004-09-02 | 2006-03-16 | Toshiba Corp | 半導体装置及びその実装方法 |
| CN100539135C (zh) | 2004-09-08 | 2009-09-09 | 松下电器产业株式会社 | 立体电路装置、使用它的电子机器及其制造方法 |
| TWI288448B (en) | 2004-09-10 | 2007-10-11 | Toshiba Corp | Semiconductor device and method of manufacturing the same |
| JP4139803B2 (ja) | 2004-09-28 | 2008-08-27 | シャープ株式会社 | 半導体装置の製造方法 |
| KR100855819B1 (ko) | 2004-10-08 | 2008-09-01 | 삼성전기주식회사 | 금속 밀봉부재가 형성된 mems 패키지 |
| KR100676493B1 (ko) | 2004-10-08 | 2007-02-01 | 디엔제이 클럽 인코 | 재배선 기판을 이용한 웨이퍼 레벨 칩 스케일 패키지의제조 방법 |
| JP4873517B2 (ja) | 2004-10-28 | 2012-02-08 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
| DE102004052921A1 (de) * | 2004-10-29 | 2006-05-11 | Infineon Technologies Ag | Verfahren zur Herstellung von Halbleiterbauelementen mit externen Kontaktierungen |
| FR2879347A1 (fr) | 2004-12-14 | 2006-06-16 | Commissariat Energie Atomique | Dispositif electronique a deux composants assembles et procede de fabrication d'un tel dispositif |
| US20060138626A1 (en) | 2004-12-29 | 2006-06-29 | Tessera, Inc. | Microelectronic packages using a ceramic substrate having a window and a conductive surface region |
| KR20060087273A (ko) | 2005-01-28 | 2006-08-02 | 삼성전기주식회사 | 반도체 패키지및 그 제조방법 |
| US7675153B2 (en) | 2005-02-02 | 2010-03-09 | Kabushiki Kaisha Toshiba | Semiconductor device having semiconductor chips stacked and mounted thereon and manufacturing method thereof |
| US7538032B2 (en) | 2005-06-23 | 2009-05-26 | Teledyne Scientific & Imaging, Llc | Low temperature method for fabricating high-aspect ratio vias and devices fabricated by said method |
| US7449779B2 (en) | 2005-03-22 | 2008-11-11 | Tessera, Inc. | Wire bonded wafer level cavity package |
| US7326592B2 (en) | 2005-04-04 | 2008-02-05 | Infineon Technologies Ag | Stacked die package |
| JP4237160B2 (ja) | 2005-04-08 | 2009-03-11 | エルピーダメモリ株式会社 | 積層型半導体装置 |
| JP4308797B2 (ja) | 2005-05-02 | 2009-08-05 | 株式会社アドバンストシステムズジャパン | 半導体パッケージおよびソケット付き回路基板 |
| US7208345B2 (en) | 2005-05-11 | 2007-04-24 | Infineon Technologies Ag | Method of manufacturing a semiconductor device comprising stacked chips and a corresponding semiconductor device |
| JP2007019107A (ja) | 2005-07-05 | 2007-01-25 | Shinko Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
| KR100629498B1 (ko) | 2005-07-15 | 2006-09-28 | 삼성전자주식회사 | 마이크로 패키지, 멀티―스택 마이크로 패키지 및 이들의제조방법 |
| JP4551321B2 (ja) | 2005-07-21 | 2010-09-29 | 新光電気工業株式会社 | 電子部品実装構造及びその製造方法 |
| US7419853B2 (en) | 2005-08-11 | 2008-09-02 | Hymite A/S | Method of fabrication for chip scale package for a micro component |
| US7485968B2 (en) | 2005-08-11 | 2009-02-03 | Ziptronix, Inc. | 3D IC method and device |
| SG130066A1 (en) | 2005-08-26 | 2007-03-20 | Micron Technology Inc | Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices |
| US7485969B2 (en) | 2005-09-01 | 2009-02-03 | Micron Technology, Inc. | Stacked microelectronic devices and methods for manufacturing microelectronic devices |
| US20070052050A1 (en) | 2005-09-07 | 2007-03-08 | Bart Dierickx | Backside thinned image sensor with integrated lens stack |
| KR20070048952A (ko) | 2005-11-07 | 2007-05-10 | 삼성전자주식회사 | 내부 접속 단자를 갖는 멀티 칩 패키지 |
| US20070126085A1 (en) | 2005-12-02 | 2007-06-07 | Nec Electronics Corporation | Semiconductor device and method of manufacturing the same |
| WO2007066409A1 (ja) | 2005-12-09 | 2007-06-14 | Spansion Llc | 半導体装置およびその製造方法 |
| US7981726B2 (en) | 2005-12-12 | 2011-07-19 | Intel Corporation | Copper plating connection for multi-die stack in substrate package |
| US7632708B2 (en) | 2005-12-27 | 2009-12-15 | Tessera, Inc. | Microelectronic component with photo-imageable substrate |
| US20070158807A1 (en) * | 2005-12-29 | 2007-07-12 | Daoqiang Lu | Edge interconnects for die stacking |
| US20070190747A1 (en) | 2006-01-23 | 2007-08-16 | Tessera Technologies Hungary Kft. | Wafer level packaging to lidded chips |
| SG135074A1 (en) | 2006-02-28 | 2007-09-28 | Micron Technology Inc | Microelectronic devices, stacked microelectronic devices, and methods for manufacturing such devices |
| US7741707B2 (en) | 2006-02-27 | 2010-06-22 | Stats Chippac Ltd. | Stackable integrated circuit package system |
| US7510928B2 (en) | 2006-05-05 | 2009-03-31 | Tru-Si Technologies, Inc. | Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques |
| TWI367557B (en) | 2006-08-11 | 2012-07-01 | Sanyo Electric Co | Semiconductor device and manufaturing method thereof |
| US7888185B2 (en) | 2006-08-17 | 2011-02-15 | Micron Technology, Inc. | Semiconductor device assemblies and systems including at least one conductive pathway extending around a side of at least one semiconductor device |
| US7531445B2 (en) | 2006-09-26 | 2009-05-12 | Hymite A/S | Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane |
| US8513789B2 (en) | 2006-10-10 | 2013-08-20 | Tessera, Inc. | Edge connect wafer level stacking with leads extending along edges |
| US7901989B2 (en) | 2006-10-10 | 2011-03-08 | Tessera, Inc. | Reconstituted wafer level stacking |
| US7829438B2 (en) | 2006-10-10 | 2010-11-09 | Tessera, Inc. | Edge connect wafer level stacking |
| US7759166B2 (en) | 2006-10-17 | 2010-07-20 | Tessera, Inc. | Microelectronic packages fabricated at the wafer level and methods therefor |
| US7807508B2 (en) | 2006-10-31 | 2010-10-05 | Tessera Technologies Hungary Kft. | Wafer-level fabrication of lidded chips with electrodeposited dielectric coating |
| US7935568B2 (en) | 2006-10-31 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer-level fabrication of lidded chips with electrodeposited dielectric coating |
| US7663213B2 (en) | 2006-11-13 | 2010-02-16 | China Wafer Level Csp Ltd. | Wafer level chip size packaged chip device with a double-layer lead structure and method of fabricating the same |
| US7394152B2 (en) | 2006-11-13 | 2008-07-01 | China Wafer Level Csp Ltd. | Wafer level chip size packaged chip device with an N-shape junction inside and method of fabricating the same |
| US8569876B2 (en) | 2006-11-22 | 2013-10-29 | Tessera, Inc. | Packaged semiconductor chips with array |
| US7791199B2 (en) | 2006-11-22 | 2010-09-07 | Tessera, Inc. | Packaged semiconductor chips |
| US7952195B2 (en) | 2006-12-28 | 2011-05-31 | Tessera, Inc. | Stacked packages with bridging traces |
| US20080157327A1 (en) | 2007-01-03 | 2008-07-03 | Advanced Chip Engineering Technology Inc. | Package on package structure for semiconductor devices and method of the same |
| EP2135280A2 (en) | 2007-03-05 | 2009-12-23 | Tessera, Inc. | Chips having rear contacts connected by through vias to front contacts |
| US20080284041A1 (en) | 2007-05-18 | 2008-11-20 | Samsung Electronics Co., Ltd. | Semiconductor package with through silicon via and related method of fabrication |
| KR100914977B1 (ko) | 2007-06-18 | 2009-09-02 | 주식회사 하이닉스반도체 | 스택 패키지의 제조 방법 |
| TW200917391A (en) * | 2007-06-20 | 2009-04-16 | Vertical Circuits Inc | Three-dimensional circuitry formed on integrated circuit device using two-dimensional fabrication |
| US20110024890A1 (en) | 2007-06-29 | 2011-02-03 | Stats Chippac, Ltd. | Stackable Package By Using Internal Stacking Modules |
| US8766910B2 (en) | 2007-07-04 | 2014-07-01 | Cypress Semiconductor Corporation | Capacitive sensing control knob |
| JP2009032929A (ja) | 2007-07-27 | 2009-02-12 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| CN101809739B (zh) | 2007-07-27 | 2014-08-20 | 泰塞拉公司 | 具有后应用的衬垫延长部分的重构晶片堆封装 |
| EP2183770B1 (en) | 2007-07-31 | 2020-05-13 | Invensas Corporation | Method of forming through-substrate vias and corresponding decvice |
| KR101387701B1 (ko) | 2007-08-01 | 2014-04-23 | 삼성전자주식회사 | 반도체 패키지 및 이의 제조방법 |
| CN101861646B (zh) | 2007-08-03 | 2015-03-18 | 泰塞拉公司 | 利用再生晶圆的堆叠封装 |
| US8043895B2 (en) | 2007-08-09 | 2011-10-25 | Tessera, Inc. | Method of fabricating stacked assembly including plurality of stacked microelectronic elements |
| WO2009023462A1 (en) | 2007-08-10 | 2009-02-19 | Spansion Llc | Semiconductor device and method for manufacturing thereof |
| KR100905784B1 (ko) | 2007-08-16 | 2009-07-02 | 주식회사 하이닉스반도체 | 반도체 패키지용 관통 전극 및 이를 갖는 반도체 패키지 |
| KR20090047776A (ko) | 2007-11-08 | 2009-05-13 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
| KR101465948B1 (ko) | 2007-12-27 | 2014-12-10 | 삼성전자주식회사 | 웨이퍼 레벨 스택 패키지 및 웨이퍼 레벨 스택 패키지 제조방법 |
| US8084854B2 (en) | 2007-12-28 | 2011-12-27 | Micron Technology, Inc. | Pass-through 3D interconnect for microelectronic dies and associated systems and methods |
| US20090212381A1 (en) | 2008-02-26 | 2009-08-27 | Tessera, Inc. | Wafer level packages for rear-face illuminated solid state image sensors |
| US20100053407A1 (en) | 2008-02-26 | 2010-03-04 | Tessera, Inc. | Wafer level compliant packages for rear-face illuminated solid state image sensors |
| US7973416B2 (en) | 2008-05-12 | 2011-07-05 | Texas Instruments Incorporated | Thru silicon enabled die stacking scheme |
| US7863721B2 (en) | 2008-06-11 | 2011-01-04 | Stats Chippac, Ltd. | Method and apparatus for wafer level integration using tapered vias |
| KR101655897B1 (ko) | 2008-06-16 | 2016-09-08 | 테세라, 인코포레이티드 | 마이크로전자 조립체 및 적층형 마이크로전자 조립체의 제조 방법 |
| US20100065949A1 (en) | 2008-09-17 | 2010-03-18 | Andreas Thies | Stacked Semiconductor Chips with Through Substrate Vias |
| KR100990943B1 (ko) | 2008-11-07 | 2010-11-01 | 주식회사 하이닉스반도체 | 반도체 패키지 |
| TWI446498B (zh) | 2009-03-13 | 2014-07-21 | 泰斯拉公司 | 具有延伸穿越銲墊之通孔的堆疊微電子總成 |
-
2009
- 2009-06-15 KR KR1020107028161A patent/KR101655897B1/ko not_active Expired - Fee Related
- 2009-06-15 CN CN2009801225230A patent/CN102067310B/zh active Active
- 2009-06-15 WO PCT/US2009/003643 patent/WO2009154761A1/en not_active Ceased
- 2009-06-15 US US12/456,349 patent/US8680662B2/en not_active Expired - Fee Related
- 2009-06-15 EP EP09767074.9A patent/EP2308087B1/en not_active Not-in-force
- 2009-06-15 JP JP2011514614A patent/JP5639052B2/ja active Active
- 2009-06-16 TW TW098120145A patent/TWI425611B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US20090316378A1 (en) | 2009-12-24 |
| EP2308087A1 (en) | 2011-04-13 |
| KR101655897B1 (ko) | 2016-09-08 |
| EP2308087B1 (en) | 2020-08-12 |
| CN102067310A (zh) | 2011-05-18 |
| TWI425611B (zh) | 2014-02-01 |
| WO2009154761A1 (en) | 2009-12-23 |
| WO2009154761A9 (en) | 2010-03-11 |
| CN102067310B (zh) | 2013-08-21 |
| US8680662B2 (en) | 2014-03-25 |
| TW201005918A (en) | 2010-02-01 |
| KR20110027690A (ko) | 2011-03-16 |
| JP2011524647A (ja) | 2011-09-01 |
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