JP5353397B2 - 露光装置及びデバイス製造方法 - Google Patents
露光装置及びデバイス製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
Description
δ=k2・λ/NA2 ……(2)
ここで、λは露光波長、NAは投影光学系の開口数、k1,k2はプロセス係数である。(1)式、(2)式より、解像度Rを高めるために、露光波長λを短くして、開口数NAを大きく(大NA化)すると、焦点深度δが狭くなることが分かる。投影露光装置では、オートフォーカス方式でウエハの表面を投影光学系の像面に合わせ込んで露光を行っているが、そのためには焦点深度δはある程度広いことが望ましい。そこで、従来においても位相シフトレチクル法、変形照明法、多層レジスト法など、実質的に焦点深度を広くする提案がなされている。
このように、上記従来例には、数々の改善すべき点が散見される。
以下、本発明の第1の実施形態について、図1〜図10(B)に基づいて説明する。
a. 主制御装置20は、走査露光中に、前述した温度センサ38A、38Bの計測値を取り込み、前述したウエハ上の照射領域の走査方向の上流側の端部と下流側の端部との温度差ΔTを算出する。また、主制御装置20は、メモリ21内に格納されている前述したウエハ上の照射領域内における水の温度分布を演算するため情報(例えば演算式、又はテーブルデータ)を用い、算出した温度差ΔTとレンズ42の下方を流れる水の流量とに基づいて上記の水の温度分布を演算にて求める。
b. また、主制御装置20は、メモリ21内に格納されている前述の情報(例えば演算式、又はテーブルデータ)を用い、求めた水の温度分布に基づいて照射領域内の例えば走査方向の一側と他側の点におけるベストフォーカス位置の変化に対応する温度変化係数を演算する。
c. また、主制御装置20は、メモリ21内に格納されている前述のテーブルデータあるいは算出式を用い、ウエハWの走査速度、水の供給量に基づいて、照射領域内の例えば走査方向の一側と他側の点におけるベストフォーカス位置の変化に対応する圧力変化係数を演算する。
d. また、主制御装置20は、メモリ21内に格納されている、前述の収差、例えばベストフォーカス位置を算出するための算出式に、b.及びc.でそれぞれ算出した温度変化係数と圧力変化係数とを代入して、照射領域内の例えば走査方向の一側と他側の点におけるベストフォーカス位置を算出する。
e. また、主制御装置20は、d.で算出した結果に基づき、その時点における投影光学系の像面形状(像面の傾斜)を算出し、その算出結果に基づいて、焦点位置検出系の各検出点(結像光束の照射ポイント)における目標位置の設定(検出オフセットの設定)を行い、その目標値に基づいて、ウエハWのフォーカス制御及びレベリング制御を行う。すなわち、ウエハWの表面が像面とほぼ合致するように、Z・チルトステージ30及びウエハホルダ70の移動を制御する。
f. 主制御装置20は、上記a.〜e.の処理を、走査露光中、所定間隔で繰り返し行う。この結果、ウエハW上の各点は、投影光学系PLの像面に沿って駆動され、レンズ42とウエハWとの間の水の温度変化や水の流れに起因する圧力変化による、露光中のデフォーカスの発生が効果的に抑制される。
次に、本発明の第2の実施形態を図11(A)〜図11(F)に基づいて説明する。ここで、前述した第1の実施形態と同一若しくは同等の構成部分については、同一の符号を用いるとともにその説明を簡略にし、若しくは省略するものとする。この第2の実施形態の露光装置では、主制御装置20による液体給排ユニット32を介した水の給排水の方法が、前述の第1の実施形態と異なるのみで、露光装置の構成などは、同様になっている。従って、以下では重複説明を避ける観点から相違点を中心として説明する。
《デバイス製造方法》
次に上述した露光装置をリソグラフィ工程で使用したデバイスの製造方法の実施形態について説明する。
Claims (17)
- エネルギビームによりパターンを照明し、前記パターンを投影光学系を介して基板上に転写する露光装置であって、
前記基板が載置され、該基板を保持して2次元面内で移動する基板ステージと;
前記投影光学系と前記基板ステージ上の前記基板との間を局所的に液体で満たすために、その液体を供給する供給装置と;
前記液体を回収する回収装置と;
前記基板ステージ上の前記基板の載置領域の周囲の少なくとも一部に設けられ、前記投影光学系の投影領域が前記基板からはずれる際に前記投影光学系との間に前記液体を保持するように、その表面が前記載置領域に載置された基板表面とほぼ同じ高さとなるプレートと;を備える露光装置。 - 前記プレートは、前記基板ステージ上の前記基板のエッジ部の露光の際に前記投影光学系との間に前記液体を保持する露光装置。
- 請求項1又は2に記載の露光装置において、
前記プレートと前記基板との隙間は3mm以下に設定されていることを特徴とする露光装置。 - 請求項1〜3のいずれか一項に記載の露光装置において、
前記基板ステージの位置を計測する干渉計と;
前記投影光学系と前記基板との間の前記液体周辺の空調を行う空調装置と;を更に備える露光装置。 - 請求項1〜4のいずれか一項に記載の露光装置において、
前記供給装置による液体の供給は、前記プレート上で開始されることを特徴とする露光装置。 - 請求項1〜5のいずれか一項に記載の露光装置において、
前記投影光学系は、複数の光学素子を含み、該複数の光学素子のうち最も前記基板側に位置する光学素子には、露光に使用しない部分に孔が形成され、
前記孔を介して前記液体の供給、前記液体の回収、及び気泡の回収の少なくとも一つの動作が行われることを特徴とする露光装置。 - 請求項1〜6のいずれか一項に記載の露光装置において、
前記基板ステージが停止しているときは、前記供給装置による液体の供給動作及び前記回収装置による液体の回収動作をともに停止する制御装置を更に備える露光装置。 - 請求項1〜7のいずれか一項に記載の露光装置において、
前記供給装置は、前記基板の移動方向の前方側から前記投影光学系と前記基板ステージ上の基板との間に液体を供給することを特徴とする露光装置。 - 請求項1〜7のいずれか一項に記載の露光装置において、
前記供給装置は、前記基板の移動方向の後方側から前記投影光学系と前記基板ステージ上の基板との間に液体を供給することを特徴とする露光装置。 - 請求項1〜9のいずれか一項に記載の露光装置において、
前記パターンを走査露光方式で前記基板上に転写するため、前記エネルギビームに対して前記基板ステージを所定の走査方向に駆動する駆動系を更に備える露光装置。 - 請求項10に記載の露光装置において、
前記供給装置は、前記走査方向に直交する非走査方向に関して離間した複数の供給口を有し、前記基板上の露光対象の区画領域の大きさに応じて前記複数の供給口の中から選択した少なくとも1つの供給口から前記液体の供給を行うことを特徴とする露光装置。 - 請求項1〜11のいずれか一項に記載の露光装置において、
前記投影光学系に関して前記基板の移動方向の後方で液中の気泡を回収する少なくとも一つの気泡回収装置を更に備える露光装置。 - 請求項1〜12のいずれか一項に記載の露光装置において、
前記投影光学系と前記基板との間の液体の温度情報の実測値及び予測値の少なくとも一方に基づいて露光条件の調整を行う調整装置を更に備える露光装置。 - 請求項1〜13のいずれか一項に記載の露光装置において、
前記供給装置は、前記投影光学系のうち最も像面側の光学素子の周囲に設けられたユニットを備え、前記ユニットの下端面に設けられた供給口を介して前記液体を供給する露光装置。 - 請求項1〜14のいずれか一項に記載の露光装置において、
前記回収装置は、前記投影光学系のうち最も像面側の光学素子の周囲に設けられたユニットの下端面に設けられた孔を介して前記液体を回収する露光装置。 - 請求項1〜15のいずれか一項に記載の露光装置において、
前記供給装置による液体の供給動作と、前記回収装置による液体の回収動作とが並行して行われる露光装置。 - リソグラフィ工程を含むデバイス製造方法であって、
前記リソグラフィ工程では、請求項1〜16のいずれか一項に記載の露光装置を用いて基板上にデバイスパターンを転写することを特徴とするデバイス製造方法。
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JP2009039347A Expired - Fee Related JP4978641B2 (ja) | 2002-12-10 | 2009-02-23 | 露光装置及びデバイス製造方法 |
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