JP2009158981A - 露光装置及びデバイス製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
Abstract
【解決手段】 調整装置としての主制御装置20が、温度センサ38A、38Bの計測結果(投影光学系とウエハとの間の水の温度情報の実測値)に基づいて、ウエハ上の照明光の照射領域内の収差、例えばベストフォーカス位置の変化に対応する温度変化係数を求め、その温度変化係数に基づいて照射領域内の例えば走査方向の一側と他側の点におけるベストフォーカス位置を算出する。主制御装置20は、その時点における投影光学系の像面形状(像面の傾斜)を算出し、その算出結果に基づいて、ウエハの表面が像面とほぼ合致するように、ウエハのフォーカス制御及びレベリング制御を行う。従って、ウエハ上にパターンを精度良く転写できる。
【選択図】図6
Description
δ=k2・λ/NA2 ……(2)
ここで、λは露光波長、NAは投影光学系の開口数、k1,k2はプロセス係数である。(1)式、(2)式より、解像度Rを高めるために、露光波長λを短くして、開口数NAを大きく(大NA化)すると、焦点深度δが狭くなることが分かる。投影露光装置では、オートフォーカス方式でウエハの表面を投影光学系の像面に合わせ込んで露光を行っているが、そのためには焦点深度δはある程度広いことが望ましい。そこで、従来においても位相シフトレチクル法、変形照明法、多層レジスト法など、実質的に焦点深度を広くする提案がなされている。
このように、上記従来例には、数々の改善すべき点が散見される。
以下、本発明の第1の実施形態について、図1〜図10(B)に基づいて説明する。
a. 主制御装置20は、走査露光中に、前述した温度センサ38A、38Bの計測値を取り込み、前述したウエハ上の照射領域の走査方向の上流側の端部と下流側の端部との温度差ΔTを算出する。また、主制御装置20は、メモリ21内に格納されている前述したウエハ上の照射領域内における水の温度分布を演算するため情報(例えば演算式、又はテーブルデータ)を用い、算出した温度差ΔTとレンズ42の下方を流れる水の流量とに基づいて上記の水の温度分布を演算にて求める。
b. また、主制御装置20は、メモリ21内に格納されている前述の情報(例えば演算式、又はテーブルデータ)を用い、求めた水の温度分布に基づいて照射領域内の例えば走査方向の一側と他側の点におけるベストフォーカス位置の変化に対応する温度変化係数を演算する。
c. また、主制御装置20は、メモリ21内に格納されている前述のテーブルデータあるいは算出式を用い、ウエハWの走査速度、水の供給量に基づいて、照射領域内の例えば走査方向の一側と他側の点におけるベストフォーカス位置の変化に対応する圧力変化係数を演算する。
d. また、主制御装置20は、メモリ21内に格納されている、前述の収差、例えばベストフォーカス位置を算出するための算出式に、b.及びc.でそれぞれ算出した温度変化係数と圧力変化係数とを代入して、照射領域内の例えば走査方向の一側と他側の点におけるベストフォーカス位置を算出する。
e. また、主制御装置20は、d.で算出した結果に基づき、その時点における投影光学系の像面形状(像面の傾斜)を算出し、その算出結果に基づいて、焦点位置検出系の各検出点(結像光束の照射ポイント)における目標位置の設定(検出オフセットの設定)を行い、その目標値に基づいて、ウエハWのフォーカス制御及びレベリング制御を行う。すなわち、ウエハWの表面が像面とほぼ合致するように、Z・チルトステージ30及びウエハホルダ70の移動を制御する。
f. 主制御装置20は、上記a.〜e.の処理を、走査露光中、所定間隔で繰り返し行う。この結果、ウエハW上の各点は、投影光学系PLの像面に沿って駆動され、レンズ42とウエハWとの間の水の温度変化や水の流れに起因する圧力変化による、露光中のデフォーカスの発生が効果的に抑制される。
次に、本発明の第2の実施形態を図11(A)〜図11(F)に基づいて説明する。ここで、前述した第1の実施形態と同一若しくは同等の構成部分については、同一の符号を用いるとともにその説明を簡略にし、若しくは省略するものとする。この第2の実施形態の露光装置では、主制御装置20による液体給排ユニット32を介した水の給排水の方法が、前述の第1の実施形態と異なるのみで、露光装置の構成などは、同様になっている。従って、以下では重複説明を避ける観点から相違点を中心として説明する。
《デバイス製造方法》
次に上述した露光装置をリソグラフィ工程で使用したデバイスの製造方法の実施形態について説明する。
Claims (19)
- エネルギビームによりパターンを照明し、前記パターンを投影光学系を介して基板上に転写する露光装置であって、
前記基板が載置され、該基板を保持して2次元面内で移動する基板ステージと;
前記基板ステージ上の前記基板と前記投影光学系との間を少なくとも含む所定の空間領域に液体を供給する供給機構と;
前記投影光学系と前記基板との間の液体の温度情報に基づいて露光条件の調整を行う調整装置と;を備える露光装置。 - 請求項1に記載の露光装置において、
前記パターンを走査露光方式で前記基板上に転写するため、前記エネルギビームに対して前記基板ステージを所定の走査方向に駆動する駆動系と;
前記投影光学系の前記走査方向の一側と他側に少なくとも各1つ配置された少なくとも2つの温度センサと;を更に備える露光装置。 - 請求項2に記載の露光装置において、
前記一側と他側にそれぞれ配置された少なくとも2つの前記温度センサの検出結果に基づいて、前記パターン及び前記投影光学系を介して前記エネルギビームが照射される前記基板上の領域を前記液体が通過する間に生じるその液体の温度変化を予測する予測装置を更に備える露光装置。 - 請求項1に記載の露光装置において、
前記投影光学系と前記基板との間の液体の温度を検出可能な温度センサを更に備え、該温度センサの検出結果に基づいて前記露光条件の調整を行うことを特徴とする露光装置。 - 請求項1〜4のいずれか一項に記載の露光装置において、
前記パターンの転写のための走査露光時に、前記エネルギビームに対して前記基板ステージを所定の走査方向に駆動する駆動系を更に備え、
前記調整装置は、前記投影光学系と前記基板との間の液体の走査方向の温度分布を考慮して、露光条件を調整することを特徴とする露光装置。 - 請求項5に記載の露光装置において、
前記調整装置は、前記走査方向の温度分布によって生じる像面傾斜を考慮して、像面と基板表面との位置関係を調整することを特徴とする露光装置。 - 請求項6に記載の露光装置において、
前記調整装置は、前記走査方向の温度分布によって生じる走査方向の像面傾斜に合わせて前記基板を傾斜させるとともに、その傾斜方向に前記基板を走査することを特徴とする露光装置。 - 請求項1〜7のいずれか一項に記載の露光装置において、
前記供給機構は、基板の移動方向に沿って前記液体を流すことを特徴とする露光装置。 - 請求項8に記載の露光装置において、
前記供給機構は、前記基板の移動方向の後方から前記液体を流すことを特徴とする露光装置。 - 請求項1〜9のいずれか一項に記載の露光装置において、
前記温度情報は、実測値及び予測値の少なくとも一方を含むことを特徴とする露光装置。 - 請求項1〜10のいずれか一項に記載の露光装置において、
前記温度情報に基づいて、前記投影光学系によって形成される像面と前記基板表面との位置関係を調整するためのフォーカス制御が行われることを特徴とする露光装置。 - 投影光学系を介してパターンの像を基板上に投影することによって前記基板を露光する露光装置であって、
前記基板が載置され、該基板を保持して2次元平面内で移動する基板ステージと;
前記基板ステージ上の基板と前記投影光学系との間を少なくとも含む空間領域に液体を供給する供給機構と;
前記投影光学系と前記基板との間の圧力情報に基づいて露光条件の調整を行う調整装置と;を備える露光装置。 - 請求項12に記載の露光装置において、
前記基板は所定の走査方向に移動しながら露光され、
前記投影光学系と前記基板との間の液体は前記走査方向と平行に流れ、
前記調整装置は、前記走査方向の圧力分布に基づいて露光条件の調整を行うことを特徴とする露光装置。 - 請求項12又は13に記載の露光装置において、
前記基板は、前記液体の流れる方向と同じ方向に移動しながら露光されることを特徴とする露光装置。 - 請求項12〜14のいずれか一項に記載の露光装置において、
前記調整装置は、前記基板の走査速度に応じた露光条件の調整情報に基づいて露光条件の調整を行うことを特徴とする露光装置。 - 請求項12〜15のいずれか一項に記載の露光装置において、
前記調整装置は、前記供給機構による液体の供給量に応じた露光条件の調整情報に基づいて露光条件の調整を行うことを特徴とする露光装置。 - 投影光学系と液体とを介して基板上にエネルギビームを照射し、該基板を露光する露光装置であって、
前記基板を保持して2次元面内で移動可能な基板ステージと;
前記液体の温度情報と前記液体の圧力情報との少なくとも一方に基づいて、前記基板ステージの移動を制御する制御装置と;を備える露光装置。 - 請求項17に記載の露光装置において、
前記制御装置は、前記投影光学系によって形成される像面と前記基板表面とをほぼ合致させるように、前記温度情報と前記圧力情報との少なくとも一方に基づいて前記基板ステージの移動を制御することを特徴とする露光装置。 - リソグラフィ工程を含むデバイス製造方法であって、
前記リソグラフィ工程では、請求項1〜18のいずれか一項に記載の露光装置を用いて基板上にデバイスパターンを転写することを特徴とするデバイス製造方法。
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