JP4838190B2 - 制御された気孔を形成するための材料及び方法 - Google Patents
制御された気孔を形成するための材料及び方法 Download PDFInfo
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- JP4838190B2 JP4838190B2 JP2007109320A JP2007109320A JP4838190B2 JP 4838190 B2 JP4838190 B2 JP 4838190B2 JP 2007109320 A JP2007109320 A JP 2007109320A JP 2007109320 A JP2007109320 A JP 2007109320A JP 4838190 B2 JP4838190 B2 JP 4838190B2
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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Description
例:ジエトキシメチルシラン、ジメチルジメトキシシラン
例:1,3−ジメチル−1,3−ジエトキシジシロキサン
例:1,2−ジメチル−1,1,2,2−テトラエトキシジシラン
例:ジメチルジアセトキシシラン
例:1,3−ジメチル−1,3−ジアセトキシジシロキサン
例:1,2−ジメチル−1,1,2,2−テトラアセトキシジシラン
例:1,3−ジメチル−1−アセトキシ−3−エトキシジシロキサン
例:1,2−ジメチル−1−アセトキシ−2−エトキシジシラン
例:メチルアセトキシ−t−ブトキシシラン
例:1,3−ジメチル−1,3−ジアセトキシ−1,3−ジエトキシジシロキサン
例:1,2−ジメチル−1,2−ジアセトキシ−1,2−ジエトキシジシラン
例:1,3,5,7−テトラメチルシクロテトラシロキサン、オクタメチルシクロテトラシロキサン
この実施態様では、犠牲有機層を用いて気孔空間を生成する。犠牲層の堆積と、複合層、例えば、PDEMS(商標)層におけるポロゲンとしての使用の両方に少なくとも1つの同じ有機前駆体を用いることで、デバイスに勾配を設けることができる。同じ前駆体が犠牲層の有機前駆体としても有機ポロゲン前駆体としても使用され、PECVDプロセスは、最初、少なくとも1つの有機前駆体のみを用い、続いて、追加の少なくとも1つのOSG前駆体を流して実施することができるので、犠牲層と多孔質層の間で継ぎ目のない勾配を形成することができる。米国特許第6,583,048号明細書、同第6,846,515号明細書、同第6,054,206号明細書、同第6,054,379号明細書、同第6,171,945号明細書、及び国際公開第99/41423号パンフレットは、本発明の有機ケイ酸塩膜を形成するのに使用できる幾つかの典型的なCVD法を提供している。
例としては、シクロヘキサン、1,2,4−トリメチルシクロヘキサン、1−メチル−4−(1−メチルエチル)シクロヘキサン、シクロオクタン、メチルシクロオクタンなどが挙げられる。
例としては、エチレン、プロピレン、アセチレン、ネオヘキサン、1,3−ブタジエン、2−メチル−1,3−ブタジエン、2,3−ジメチル−2,3−ブタジエン、置換ジエンなどが挙げられる。
例としては、シクロオクテン、1,5−シクロオクタジエン、シクロヘキセン、ビニル−シクロヘキサン、ジメチルシクロヘキセン、α−テルピネン、ピネン、リモネン、ビニル−シクロヘキセンなどが挙げられる。
例としては、ノルボルナン、スピロ−ノナン、デカヒドロナフタレンなどが挙げられる。
例としては、カンフェン、ノルボルネン、ノルボルナジエン、5−エチリデン−2−ノルボルネンなどが挙げられる。
例としては、アダマンタンが挙げられる。
フッ素を含有する選択的なエッチングガス(例えば、XeF2又はBrF3)は、気相において、二酸化ケイ素に対しシリコンを選択的にエッチングすることが知られている。例えば、LopezらのMicro Total Analysis Systems 2002,Proceedings of the μTAS 2002 Symposium,6th,Nara Japan,Nov.3−7,2002(2002),2 934−936を参照されたい。このエッチ選択性は、XeF2、BrF3などを使用することで単結晶シリコン、ポリシリコン又はアモルファスシリコンの化学反応性が向上することに起因している。この種の製造の一例は、シリコン上のSiO2にポリシリコンの層を堆積し、次いでポリシリコン上にSiO2の第2層をコーティングすることによりカンチレバーを形成するものであり、上部SiO2層とポリシリコン層の両方をパターニング及びエッチングした後、XeF2を用いてポリシリコン層を選択的にエッチングすることによりカンチレバーを剥離することができる。この例では、XeF2がSiO2カンチレバーの下で拡散するにつれ、ポリシリコンが縁から内側へエッチングされる。
多孔質ケイ酸塩層と水溶性金属酸化物、例えば、酸化ゲルマニウム(GeO2)を使用して構造体を製造するもまた本発明の実施態様として意図される。GeO2は水溶性酸化物材料であり、GeO2は任意の幾つかの技術、例えば、容易に入手可能な前駆体材料から化学気相成長又はPECVDにより又は予備酸化物を用いたスピンオン技術により堆積し、続いてアニール工程を行うことができることが知られている。水溶性金属酸化物の形成のための前駆体の例としては、テトラメチルゲルマン、ゲルマン、テトラメトキシゲルマニウム及びテトラエトキシゲルマニウムからなる群より選択されるゲルマニウム(Ge)系前駆体、及びトリメチルボロン、トリメトキシボラン、トリエトキシボラン及びジボランからなる群より選択されるボロン(B)系前駆体などの材料があるがそれらに限定されない。同時に、SiO2及びOSG膜は水溶性ではないが、それらを介した水の拡散は可能であり、したがって、例えば、多孔質ケイ酸塩又は多孔質OSG層で覆われたGeO2の溶解が可能になる。
先に記載したとおり、犠牲材料と複合層は、種々の異なる方法を用いて前駆体の組成物又は混合物から基材の少なくとも一部の上に堆積される。これらの方法は、単独で又は組み合わせて使用することができる。有機ケイ酸塩膜を形成するのに使用できるプロセスの例としては、熱化学気相成長、プラズマ化学気相成長(「PECVD」)、高密度PECVD、光アシストCVD、プラズマ光アシストCVD(「PPECVD」)、低温化学気相成長、化学アシスト気相成長、熱フィラメント化学気相成長(aka iCVD又はcat−CVD)、光開始化学気相成長、液体ポリマー前駆体のCVD、超臨界流体からの堆積、又は輸送重合(「TP」)が挙げられる。幾つかの好ましい実施態様においては、堆積は、100〜425℃、好ましくは200〜425℃、より好ましくは200〜350℃の温度で行われる。本発明において用いられる化学試薬は「気体状」と記載されることがあるが、化学試薬は気体として直接反応器に送ることができるか、気化された液体、昇華された固体として送ることができるか及び/又は不活性のキャリヤーガスによって反応器に運ぶことができると解される。
有機ポロゲン及び犠牲材料は、熱アニーリング、化学処理、現場又はリモートプラズマ処理、電子ビーム処理、光硬化及び/又はマイクロ波処理を含むことができる硬化工程によって除去される。他の現場又は堆積後処理は、残っている多孔質SiO2又は多孔質OSGの材料特性、例えば、硬さ、(収縮、大気暴露、エッチング、ウェットエッチングなどに対する)安定性、完全性、均一性及び付着力を向上させるのに使用することができる。このような処理は、ポロゲンの除去に用いられるのと同じか又は異なる手段によってポロゲンの除去前、その間及び/又はその後に適用することができる。したがって、本明細書で用いられる「後処理」という語は、エネルギー(例えば、熱、プラズマ、光子、電子、マイクロ波など)又は化学物質によって膜を処理してポロゲンを除去し、膜を安定化し及び/又は材料特性を向上させることを表す。
[有機前駆体を用いた犠牲層の堆積]
3つの例示的な犠牲層を本明細書で説明したプラズマCVDプロセスによって基材表面に堆積した。この3つの例示的な犠牲層の堆積条件を表1に与える。
[Limo犠牲層とDEMS/Limo複合層の堆積]
犠牲層をLimo液体流量800mg/分、CO2キャリヤーガス流量200sccm、シャワーヘッド/ウェハ間隔350ミリインチ、ウェハチャック温度250℃、チャンバー圧力8Torrで360秒間により堆積し、膜厚289nm及び屈折率1.568の膜を得た。
シリコンの特徴の選択的エッチングを用いた空隙の製造を、裸のシリコンウェハを熱的に酸化してXeF2/BrF3の選択的エッチングに対するエッチストップを提供することにより始めた。熱的な酸化物の上に0.5μm厚さのポリシリコン層を、シランを用いた高温(900℃)CVDプロセスによって成長させた。アモルファスシリコンなどの他のタイプのシリコンを使用することもできる。ポリシリコンを標準的なフォトリソグラフィー技術とBCl3に基づくRIEプロセスを用いてパターニングした。ポリシリコンをエッチングした後、フォトレジストをO2プラズマで灰化し、次いでパターニングしたポリシリコンの特徴をエア・プロダクツ独自のMeso−ELK(商標)スピンオン多孔質OSGプロセスにより複合OSG層でコーティングした。次いで、積層を空気中400℃で焼成してポロゲンを除去した。試料を10TorrのBrF3に室温で1時間さらした。BrF3はMeso−ELK構造を通って拡散し、シリコンの特徴を選択的にエッチングした。BrF3を用いたシリコン層の選択的エッチングの後に形成された空隙のSEM写真を図9Bに示す。この製造プロセスではXeF2を使用することも可能である。
水溶性の犠牲層を用いた空隙の製造を、シリコンウェハ上に1.2μmのGeO2層を堆積することで開始した。PECVDを用いてMe4GeとO2からGeO2を堆積したが、他のゲルマニウム系前駆体、例えば、Ge(OEt)4を使用することも可能である。フォトレジストのTMAH現像の際に水分バリアとして働くように、Me4SiとO2を用いてGeO2上にSiO2層を堆積した。同様に、多くの異なるSiO2又はOSG前駆体を水分バリアに使用することが可能である。フォトレジストをパターニングして現像した後、SiO2/GeO2スタックをCF4/Ar/O2のRIEプロセスにおいてエッチングした。O2プラズマ灰化プロセスにおいてフォトレジストを除去した後、SiO2キャップは残してもよいし又はCF4/Ar/O2のRIEプロセスの時に除去してもよい。本例では、キャップはエッチングの際に除去した。次いで、パターニングしたGeO2をエア・プロダクツ独自のMeso−ELK(商標)スピンオン多孔質OSGプロセスにより複合OSG層でコーティングした。複合層を空気中400℃で焼成してポロゲンを除去した。多孔質OSGでコーティングした後、膜を水中に10分間浸漬し、その間にGeO2を溶解した。多孔質OSG層の下の部分的に溶解したGeO2犠牲層のSEM断面を図9Cに示す。このプロセスは、B2O3又は他の水溶性金属酸化物材料を犠牲材料として使用して同様のスキームで実施することも可能である。
20 多孔質層
30 犠牲層
40 上部層
50 基材
60 銅バリア層
70 銅
Claims (17)
- (a)基材を用意する工程;
(b)該基材上に少なくとも1つの有機前駆体を用いて犠牲層を堆積する工程;
(c)工程(b)における少なくとも1つの有機前駆体であるポロゲンと少なくとも1つのシリカ含有前駆体又は有機ケイ酸塩ガラス(OSG)前駆体を用いて前記基材上に複合層を堆積する工程;及び
(d)前記犠牲層と前記複合層を有する基材にエネルギーを適用し、該犠牲層を除去して空隙を与えかつ前記ポロゲンを除去して多孔質層を形成する適用工程
を含み、前記犠牲層及び複合層の堆積の両方が、化学気相成長(CVD)によるものである、空隙を形成するための方法。 - 前記少なくとも1つの有機前駆体が、
(1)環式構造及び式CnH2nを有する少なくとも1つの環式炭化水素(式中、nは4〜14であり、該環式構造中の炭素数は4〜10であり、該少なくとも1つの環式炭化水素は、任意選択で、該環式構造上に置換された複数の単純又は分枝炭化水素を含む);
(2)一般式CnH(2n+2)-2yの少なくとも1つの直鎖又は分枝の、飽和の、単又は複不飽和の炭化水素(式中、nは2〜20であり、yは0〜nである);
(3)環式構造及び式CnH2n-2xを有する少なくとも1つの単又は複不飽和の環式炭化水素(式中、xは不飽和部位の数であり、nは4〜14であり、該環式構造中の炭素数は4〜10であり、該少なくとも1つの単又は複不飽和の環式炭化水素は、任意選択で、該環式構造上に置換された複数の単純又は分枝炭化水素を含み、環内不飽和を含むか又は炭化水素置換基の1つに不飽和を含む);
(4)二環式構造及び式CnH2n-2を有する少なくとも1つの二環式炭化水素(式中、nは4〜14であり、該二環式構造中の炭素数は4〜12であり、該少なくとも1つの二環式炭化水素は、任意選択で、該二環式構造上に置換された複数の単純又は分枝炭化水素を含む);
(5)二環式構造及び式CnH2n-(2+2x)を有する少なくとも1つの複不飽和の二環式炭化水素(式中、xは不飽和部位の数であり、nは4〜14であり、該二環式構造中の炭素数は4〜12であり、該少なくとも1つの複不飽和の二環式炭化水素は、任意選択で、該二環式構造上に置換された複数の単純又は分枝炭化水素を含み、環内不飽和を含むか又は炭化水素置換基の1つに不飽和を含む);
(6)三環式構造及び式CnH2n-4を有する少なくとも1つの三環式炭化水素(式中、nは4〜14であり、該三環式構造中の炭素数は4〜12であり、該少なくとも1つの三環式炭化水素は、任意選択で、該環式構造上に置換された複数の単純又は分枝炭化水素を含む);
(7)1つ又は複数のアルコール基を含有しかつ一般式CnH2n+2-2x-2y-z(OH)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、xは該構造体中の環状環の数であって0〜4であり、yは該構造体中の不飽和結合の数であって0〜nであり、zは化合物中のアルコール基の数であって1〜4であり、アルコール官能性は環外及び/又は環内にあることができる);
(8)1つ又は複数のエーテル基を含有しかつ一般式CnH2n+2-2x-2yOzを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、xは該構造体中の環状環の数であって0〜4であり、yは該構造体中の不飽和結合の数であって0〜nであり、zは該構造体中のエーテル結合の数であって1〜4であり、1つ又は複数のエーテル結合は環外及び/又は環内にあることができる);
(9)1つ又は複数のエポキシド基を含有しかつ一般式CnH2n+2-2x-2y-2zOzを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、xは該構造体中の環状環の数であって0〜4であり、yは該構造体中の不飽和結合の数であって0〜nであり、zは該構造体中のエポキシド基の数であって1〜4であり、該エポキシド基は環状環又は直鎖に結合することができる);
(10)1つ又は複数のアルデヒド基を含有しかつ一般式CnH2n+2-2x-2y-2zOzを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、xは該構造体中の環状環の数であって0〜4であり、yは該構造体中の不飽和結合の数であって0〜nであり、zは該構造体中のアルデヒド基の数であって1〜4である);
(11)1つ又は複数のケトン基を含有しかつ一般式CnH2n+2-2x-2y-2zOzを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、xは該構造体中の環状環の数であって0〜4であり、yは該構造体中の不飽和結合の数であって0〜nであり、zは該構造体中のアルデヒド基の数であって1〜4であり、1つ又は複数のケトン基は環外及び/又は環内にあることができる);
(12)1つ又は複数のカルボン酸基を含有しかつ一般式CnH2n+2-2x-2y-3z(OOH)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、xは該構造体中の環状環の数であって0〜4であり、yは該構造体中の不飽和結合の数であって0〜nであり、zは該構造体中のカルボン酸基の数であって1〜4である);
(13)偶数のカルボン酸基を含有し、酸性官能性が脱水されて環状無水物基を形成し、一般式CnH2n+2-2x-2y-6z(O3)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、xは該構造体中の環状環の数であって0〜4であり、yは該構造体中の不飽和結合の数であって0〜nであり、zは該構造体中の無水物基の数であって1又は2である);
(14)エステル基を含有しかつ一般式CnH2n+2-2x-2y-2z(O2)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、xは該構造体中の環状環の数であって0〜4であり、yは該構造体中の不飽和結合の数であり、不飽和結合はエステルのカルボニル基と共役ではなく、zは該構造体中の無水物基の数であって1又は2である);
(15)エステル基と該エステル基のカルボニルと共役である少なくとも1つの不飽和結合とからなるアクリレート官能性を含有し、かつ一般式CnH2n+2-2x-2y-2z(O2)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、xは該構造体中の環状環の数であって0〜4であり、yは該構造体中の不飽和結合の数であって1以上であり、不飽和結合の少なくとも1つはエステルのカルボニル基と共役であり、zは該構造体中のエステル基の数であって1又は2である);
(16)エーテルとカルボニル官能基の両方を含有しかつ一般式CnH2n+2-2w-2x-2y(O)y(O)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、wは該構造体中の環状環の数であって0〜4であり、xは該構造体中の不飽和結合の数であって0〜nであり、yはケトン及び/又はアルデヒドであることができる該構造体中のカルボニル基の数であり、zは該構造体中のエーテル基の数であって1又は2であり、1つ又は複数のエーテル基は環内又は環外にあることができる);
(17)エーテルとアルコール官能基の両方を含有しかつ一般式CnH2n+2-2w-2x-y(OH)y(O)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、wは該構造体中の環状環の数であって0〜4であり、xは該構造体中の不飽和結合の数であって0〜nであり、yは該構造体中のアルコール基の数であり、zは該構造体中のエーテル基の数であって1又は2であり、1つ又は複数のエーテル基は環内又は環外にあることができる);
(18)アルコール、エーテル、カルボニル、及びカルボン酸から選択された官能基の任意の組み合わせを含有しかつ一般式CnH2n+2-2u-2v-w-2y-3z(OH)w(O)x(O)y(OOH)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、uは該構造体中の環状環の数であって0〜4であり、vは該構造体中の不飽和結合の数であって0〜nであり、wは該構造体中のアルコール基の数であって0〜4であり、xは該構造体中のエーテル基の数であって0〜4であり、1つ又は複数のエーテル基は環内又は環外にあることができ、yはケトン及び/又はアルデヒドであることができる該構造体中のカルボニル基の数であって0〜3であり、zは該構造体中のカルボン酸基の数であって0〜2である);
(19)1つ又は複数の第一アミン基を含有しかつ一般式CnH2n+2-2x-2y-z(NH2)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、xは該構造体中の環状環の数であって0〜4であり、yは該構造体中の不飽和結合の数であって0〜nであり、zは化合物中のアミン基の数であって1〜4であり、アミン官能性は環外及び/又は環内にあることができる);
(20)1つ又は複数の第二アミン基を含有しかつ一般式CnH2n+2-2x-2y-2z(NH)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、xは該構造体中の環状環の数であって0〜4であり、yは該構造体中の不飽和結合の数であって0〜nであり、zは化合物中の第二アミン基の数であって1〜4であり、アミン官能性は環外及び/又は環内にあることができる);
(21)1つ又は複数の第三アミン基を含有しかつ一般式CnH2n+2-2x-2y-3z(N)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、xは該構造体中の環状環の数であって0〜4であり、yは該構造体中の不飽和結合の数であって0〜nであり、zは化合物中の第三アミン基の数であって1〜4であり、アミン官能性は環外及び/又は環内にあることができる);
(22)1つ又は複数のニトロ基を含有しかつ一般式CnH2n+2-2x-2y-z(NO2)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、xは該構造体中の環状環の数であって0〜4であり、yは該構造体中の不飽和結合の数であって0〜nであり、zは化合物中のニトロ基の数であって1〜4であり、ニトロ官能性は環外及び/又は環内にあることができる);
(23)アミンとエーテル官能基の両方を含有しかつ一般式CnH2n+2-2u-2v-w-2x-3y-z(NH2)w(NH)x(N)y(OH)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、uは該構造体中の環状環の数であって0〜4であり、vは該構造体中の不飽和結合の数であって0〜nであり、wは第一アミン基の数であり、xは第二アミン基の数であり、yは第三アミン基の数であり、1<w+x+y<4であり、zは化合物中のアルコール基の数であって1〜4であり、アルコール及び/又はアミン基は環外及び/又は環内にあることができる);
(24)アミンとアルコール官能基の両方を含有しかつ一般式CnH2n+2-2u-2v-w-2x-3y-z(NH2)w(NH)x(N)y(OH)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、uは該構造体中の環状環の数であって0〜4であり、vは該構造体中の不飽和結合の数であって0〜nであり、wは第一アミン基の数であり、xは第二アミン基の数であり、yは第三アミン基の数であり、1<w+x+y<4であり、zは化合物中のエーテル基の数であって1〜4であり、エーテル及び/又はアミン基は環外及び/又は環内にあることができる);及び
(25)アミンとカルボニル官能基の両方を含有しかつ一般式CnH2n+2-2u-2v-w-2x-3y-2z(NH2)w(NH)x(N)y(O)zを有する少なくとも1つの炭化水素構造体(式中、nは1〜12であり、uは該構造体中の環状環の数であって0〜4であり、vは該構造体中の不飽和結合の数であって0〜nであり、wは第一アミン基の数であり、xは第二アミン基の数であり、yは第三アミン基の数であり、1<w+x+y<4であり、zは化合物中のカルボニル基の数であって1〜4であり、カルボニル基は1つ又は複数のアルデヒド及び/又はケトンであることができ、カルボニル及び/又はアミン基は環外及び/又は環内にあることができる)
からなる群より選択される少なくとも1つの要素である、請求項1に記載の空隙を形成するための方法。 - 前記少なくとも1つの有機前駆体が、α−テルピネン、リモネン、シクロヘキサン、1,2,4−トリメチルシクロヘキサン、1,5−ジメチル−1,5−シクロオクタジエン、カンフェン、アダマンタン、1,3−ブタジエン、置換ジエン、デカヒドロナフタレン、1,5−シクロオクタジエン、シクロオクタン、シクロオクテン、ノルボルナジエン、5−エチリデン−2−ノルボルネン、シクロペンテンオキシド、及びシクロペンタノンからなる群より選択される少なくとも1つの要素である、請求項1に記載の空隙を形成するための方法。
- 前記犠牲層及び複合層の堆積の両方が、プラズマ化学気相成長(PECVD)によるものである、請求項1に記載の空隙を形成するための方法。
- 前記犠牲層及び複合層が、1つの化学気相成長(CVD)工程において堆積される、請求項1に記載の空隙を形成するための方法。
- 前記犠牲層及び複合層が、1つのプラズマ化学気相成長(PECVD)工程において堆積される、請求項1に記載の空隙を形成するための方法。
- 前記適用工程(d)のエネルギーが、α粒子、β粒子、γ線、X線、高エネルギー電子、電子ビーム、可視光、赤外光、マイクロ波周波数、高周波、プラズマ、及びそれらの組み合わせからなる群より選択される少なくとも1つを含む、請求項1に記載の空隙を形成するための方法。
- 前記適用工程(d)のエネルギーが紫外線である、請求項1に記載の空隙を形成するための方法。
- 前記適用工程(d)が、紫外線出力が0〜5000Wであり;雰囲気条件が不活性、酸化性及び還元性からなる群より選択され;温度が周囲温度から500℃であり;曝露時間が0.01分〜12時間であるときに実施される、請求項8に記載の空隙を形成するための方法。
- 前記適用工程(d)のエネルギーが熱エネルギーである、請求項1に記載の空隙を形成するための方法。
- 前記適用工程(d)が、圧力が10mtorrから大気圧であり;雰囲気条件が不活性、酸化性及び還元性からなる群より選択され;温度が周囲温度から500℃であり;曝露時間が0.01分〜12時間であるときに実施される、請求項10に記載の空隙を形成するための方法。
- 犠牲層、複合層、多孔質層、及びそれらの組み合わせからなる群より選択される層をパターニングする工程をさらに含む、請求項1に記載の空隙を形成するための方法。
- 前記多孔質層の孔を充填する充填工程をさらに含む、請求項1に記載の空隙を形成するための方法。
- 前記充填工程が、活性化によって重合することができる重合可能な有機種で孔を充填することにより実施される、請求項13に記載の空隙を形成するための方法。
- 多層構造を作製するために前記工程(a)〜(d)を少なくとも1回繰り返す工程をさらに含む、請求項1に記載の空隙を形成するための方法。
- 前記多孔質層の孔を充填する充填工程をさらに含む、請求項15に記載の空隙を形成するための方法。
- 前記充填工程が、活性化によって重合することができる重合可能な有機種で孔を充填することにより実施される、請求項16に記載の空隙を形成するための方法。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11515201B2 (en) | 2019-10-25 | 2022-11-29 | Samsung Electronics Co., Ltd. | Integrated circuit device including air gaps and method of manufacturing the same |
US11862514B2 (en) | 2019-10-25 | 2024-01-02 | Samsung Electronics Co., Ltd. | Integrated circuit device including air gaps and method of manufacturing the same |
Also Published As
Publication number | Publication date |
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US20130157435A1 (en) | 2013-06-20 |
EP1848032B1 (en) | 2017-03-01 |
EP1848032A3 (en) | 2012-02-29 |
US9293361B2 (en) | 2016-03-22 |
US8846522B2 (en) | 2014-09-30 |
EP1848032A2 (en) | 2007-10-24 |
KR100859178B1 (ko) | 2008-09-19 |
CN102569179A (zh) | 2012-07-11 |
US8399349B2 (en) | 2013-03-19 |
TWI395268B (zh) | 2013-05-01 |
JP2011233926A (ja) | 2011-11-17 |
CN101060095B (zh) | 2012-12-05 |
JP5485953B2 (ja) | 2014-05-07 |
CN102569179B (zh) | 2016-08-03 |
US20140363950A1 (en) | 2014-12-11 |
CN101060095A (zh) | 2007-10-24 |
JP2007311777A (ja) | 2007-11-29 |
KR20070103318A (ko) | 2007-10-23 |
US20080038934A1 (en) | 2008-02-14 |
TW200741865A (en) | 2007-11-01 |
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