TWI425569B - 多孔低ｋ值介電薄膜之紫外光輔助孔洞密封 - Google Patents

多孔低ｋ值介電薄膜之紫外光輔助孔洞密封 Download PDF

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TWI425569B
TWI425569B TW094139403A TW94139403A TWI425569B TW I425569 B TWI425569 B TW I425569B TW 094139403 A TW094139403 A TW 094139403A TW 94139403 A TW94139403 A TW 94139403A TW I425569 B TWI425569 B TW I425569B
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dielectric material
porous low
ultraviolet radiation
wavelength
porous
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TW200620467A (en
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Carlo Waldfried
Orlando Escorcia
Ivan Berry
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Axcelis Tech Inc
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Description

多孔低k值介電薄膜之紫外光輔助孔洞密封
本發明之揭示一般係有關於半導體裝置的製造，更特別的是有關於一種針對半導體裝置中所使用之多孔低k值介電材料的紫外光輔助孔洞密封方法。
隨著半導體及其他微電子裝置逐漸縮小其尺寸，裝置裝置元件上的需求就逐漸增加。舉例而言，利用較小的裝置來避免在互聯線之間產生電容串音(capacitance crosstalk)就變得更為格外重要。電容串音一般而言係為導體之間的距離、以及置於導體間之材料的介電常數(k)兩者的函數。相當注意專注在利用具有低介電常數之新的絕緣體來將導體互相電絕緣，因為儘管二氧化矽(SiO2 )在傳統上因為其相對優異的電及機械特性而運用在這樣的裝置當中，但是當裝置縮至較小尺寸時，介電常數就需要低於大約為4之SiO2 介電常數。這些新低k值(亦即小於4之介電常數)材料係希冀用於(舉例而言)中間層介電材料(ILD)。
為了達到低的介電常數，任何人可以使用具有低介電常數的材料、及/或將多孔性導入至該材料當中，其有效降低該介電常數因為空氣的介電常數標稱為1。透過各種不同的方式將孔隙率導入至低k值材料當中。就旋轉塗佈低k值介電材料的例子當中，可以藉由使用高沸點的溶劑、藉由使用樣板(templates)、或者是藉由以成孔劑(porogen)為基之方法，來降低k值。然而，一般而言，在半導體裝置的製造當中，多孔低k值材料的整合證明是很困難的。
舉例而言，由於該多孔低k值介電材料的開孔本質，使得在隨即之製程(亦即在形成多孔低k值介電材料之後)當中所使用的製程氣體和化學物質，可能會擴散至多孔網路當中，而使其困在其中，而導致損害並改變介電常數。再者，與表面直接交流的孔洞，在之後沉積及/或形成於其上的層(例如，障壁層)當中，會產生針孔。
因此，在此技藝當中有需要提供一種改良的方法，針對多孔低k值介電材料整合至半導體裝置當中。因為至少由先前技術注意到的問題，就有需要在沉積額外之層以前及/或更進一步處理以前，將該多孔低k值介電材料進行密封。該多孔低k值介電材料之表面的密封，可有效避免製程氣體和化學物質的穿透(以及困住)。再者，密封將會提供一連續的表面，以用於在其上塗佈/沉積額外的層。因此，可以實質上避免在後來的層中形成針孔。
 本發明之概述
在本說明書中所揭示的是一種多孔低k值介電材料之紫外光輔助孔洞密封的方法。在一個具體態樣當中，一種將放置在基板上之多孔低k值介電材料進行密封的方法，其包括了將該多孔低k值介電材料之表面暴露於紫外光輻射圖案一段有效將該多孔低k值材料之表面進行密封的時間、強度、及波長，達到小於或等於大約20奈米的深度，其中該表面實質上是沒有孔洞的。
在另一個具體態樣當中，一種形成電的互連結構的方法，包括了將放置在一基板上之多孔低k值介電材料進行圖案化；將該多孔低k值介電薄膜暴露於紫外光輻射一段有效將該多孔低k值材料之表面進行密封的時間、強度、及波長圖案，達到小於或等於大約20奈米的深度，其中該表面實質上是沒有孔洞的；以及將一層障壁層及/或導電層沉積在該圖案化之多孔低k值介電材料上。
在另一個具體態樣當中，一種將放置在一基板上之多孔低k值介電材料加以密封的方法，包括氧化該多孔低k值介電材料之表面，該氧化係藉由將該表面暴露於紫外光輻射圖案一段有效於含氧之大氣中密封該多孔低k值材料之表面的時間、強度、與波長，並達到小於或等於大約20奈米的深度。
在又一個具體態樣當中，一種將放置在一基板上之多孔低k值介電材料加以密封的方法，包括碳化該多孔低k值介電材料之表面，該碳化係藉由將該表面暴露於紫外光輻射圖案一段有效將該多孔低k值材料之表面進行密封的時間、強度、及波長，達到小於或等於大約20奈米的深度。
在又一個具體態樣當中，一種將放置在一基板上之多孔低k值介電材料加以密封的方法，包括緻密化該多孔低k值介電材料之表面，該緻密化係藉由將該表面暴露於紫外光輻射圖案一段有效將該多孔低k值材料之表面進行密封的時間、強度、及波長，達到小於或等於大約20奈米的深度。
在另一個具體態樣當中，一種將放置在一基板上之介電材料加以密封的方法，包括利用紫外光輻射進行該基板的暴露，以改變該表面黏合劑，使得用於之後材料的黏合處能夠被塗佈，此係接著密封該孔洞。
在另一個具體態樣當中，一種將放置在一基板上之介電材料加以密封的方法，包括在養化或還原的氣氛中利用紫外光輻射進行該基板的暴露，以改變該表面黏合劑，使得用於之後材料的黏合處能夠被塗佈，此係接著密封該孔洞。
在又一個具體態樣當中，一種將沉積在一基板上之介電材料的孔洞加以密封的多步驟方法，包括在養化或還原氣氛存在或不存在情形下，利用紫外光輻射進行該基板的暴露，以改變該表面黏合劑，之後接著沉積一密封材料(其係選擇性地與UV方法所形成之黏合劑互相反應)，此係接著密封該孔洞。
在又一個具體態樣當中，一種將沉積在一基板上之介電材料的孔洞加以密封的多步驟方法，包括利用密封劑材料或密封前驅物進行該介電材料的暴露，然後在養化或還原氣氛存在或不存在情形下，再利用紫外光輻射進行該基板的暴露，以使該密封劑與該基板進行反應及/或改變該密封材料的黏合結構，此係接著密封該孔洞。
在又一個具體態樣當中，一種將放置在一基板上之介電材料加以密封的方法，包括利用密封劑材料進行該介電材料的暴露，同時在養化或還原氣氛存在或不存在情形下，利用紫外光輻射進行該基板的暴露，其中該紫外光輻射會與該密封劑、該基板、及/或兩者進行反應，此係接著密封該孔洞。
以上所敘述及其他特徵係以以下之圖式及詳細說明來進行示範。
 本發明之詳細敘述
本發明之揭示一般係有關於一種密封多孔低k值介電薄膜的方法。該方法一般而言包括了將該多孔低k值介電薄膜之多孔表面暴露於紫外光(UV)輻射一段能有效密封該多孔介電表面之強度、時間、波長、以及氣氛當中，其係藉由碳化、氧化、薄膜緻密化、產生表面反應處的方式，能使經沉積之材料(之後會將該孔洞加以密封的材料)進行化學反應；藉由沉積一種材料，該材料會在與紫外光輻射反應時密封該孔洞；及/或藉由沉積一種材料，該材料會在伴隨著與紫外光輻射反應時密封該孔洞。該UV輔助密封方法有效地提供一種在積體電路製造方法當中整合多孔低k值介電材料的方式。可選擇地，在暴露於紫外光輻射以後，可以利用熔爐退火及相似的方法，來將各種不同之沉積層進行退火，如許多應用及製造方法所希冀的一般。在本說明書當中所使用之該術語「多孔低k值介電材料」，一般而言係意指那些具有多孔基質的材料，其中該孔洞直徑係小於大約2奈米(nm)，並具有低於大約3.0之最終介電常數(k)。
用於形成先進電的互連結構的方法，包括了將該多孔低k值介電材料形成於一基板上，之後再將該表面暴露於紫外光輻射圖案一段時間、波長、強度、與氣氛，能有效將該低k值介電材料之表面加以密封、或者是產生用於塗佈密封材料的結合處。在一個具體態樣當中，該紫外光輻射係有效將該經暴露之多孔低k值介電材料的表面密封，達到20奈米的深度，較佳為大約10奈米的深度，更佳為等於平均孔洞直徑的深度。雖然密封該介電材料可以超過20奈米，但是對於先進的半導體製造而言，一般較佳是小於20奈米，因為密封穿透會對該低k值材料之整體介電行為產生衝擊。吾人已經發現到，將該多孔低k值介電材料密封至少這些深度，實質上會避免在進一步處理時對該介電材料產生隨即的損害。就其本身而言，在後來處裡期間中所使用的製程氣體和化學物質，無法穿透該多孔低k值介電材料支多孔結構。再者，藉由密封多孔低k值介電層，就可以製造後來之層的沉積及/或塗佈，例如，障壁或擴散層，其實質上不具有針孔，因為底下之多孔介電材料包括了實質上無針孔之表面，也就是已經被密封。在積體電路的製造當中，該擴散或障壁層可以是很重要的，因為可以將這些層用來形成中間層介電材料與之後所沉積之導電材料(例如諸如銅金屬互連)間的界線。
所屬技術領域中具有通常知識者一般所使用之方法的某些實施例，可以用來形成多孔低k值介電薄膜的，包括了有化學氣相沉積(CVD)、電漿輔助化學氣相沉積(PECVD)、高密度PECVD、質子輔助CVD、電漿－質子輔助CVD、低溫CVD、化學輔助氣相沉積、熱燈絲CVD、液態聚合物前驅物之CVD、來自超臨界流體的沉積、或者是運輸聚合作用(transport polymerization，「TP」)。其他可用來形成該薄膜的方法，包括了旋轉塗佈、浸塗佈、Langmuir －blodgett 自組裝(self－assembly)、或者是噴霧沉積(misting deposition)方法。
在本說明書中所使用之該術語「多孔低k值介電材料」，一般而言係意指那些包括基質與成孔劑的材料，其中該介電材料在移除該成孔劑之後具有多孔結構。該術語「成孔劑(porogen)材料」一般而言係意指所屬技術中那些以犧牲性有機材料為基的材料，其會在移除該材料之後，於該低k值介電薄膜內部產生或形成孔洞。該成孔劑材料在基質或基質前驅物當中形成區域(domains)(或者是分離的地區)，其會在移除時於基質或基質前驅物當中形成孔洞。在較佳情形下，該區域應該要不大於最終所希冀之孔洞尺寸。在本發明之揭示當中，適當的成孔劑材料並沒有限制，可包括那些在暴露於熱及/或光輻射時會降解的材料，以形成揮發性的碎片(fragments)或者是自由基(radicals)，其可(舉例而言)在惰性氣體的流動下從該基質材料移除。在此方式之中，暴露於輻射時，在該基質內部和遍及該基質會形成孔洞，一般而言會從底部表面延伸至頂部表面。就其本身而論，該最終的表面可包括多數個針孔。
那些在所屬技術領域中的特徵為成熱不穩定性、熱可移除性、光化學不穩定性、光化學可移除性、及其相似者的孔劑材料，一般而言係適用於形成多孔低k值介電材料。這種材料一般而言係敘述於美國專利案第6,653,358號中，其名稱為「一種包含可交聯基質前驅物與成孔劑之組成物及由其所製備之多孔基質(A Composition Containing a Cross －linkable Matrix Precursor and a Porogen and a Porous Matrix Prepared Therefrom )」，其成分併入於本說明書中做為參考資料。示範性的成孔劑材料一般而言包括(但是不侷限於)碳氫化合物材料、不穩定之有機基團、溶劑、可分解之聚合物、界面活性劑、樹狀聚合物、高度分枝(hyper－branched)聚合物、聚氧亞烴基化合物、或其組合。
適當的基質與基質前驅物一般而言包括了(但是不侷限於)含矽聚合物、或前驅物to such聚合物、例如倍半矽氧烷，諸如烷基(較佳為較低的烷基，例如甲基倍半矽氧烷、芳基(例如苯基)或烷基/芳基倍半矽氧烷、以及倍半矽氧烷的共聚物(例如聚醯亞胺和倍半矽氧烷的共聚物)；以似金鋼石(adamantine)為基之熱固性組成物；交聯之聚伸苯基；聚芳基醚；聚苯乙烯；交聯之聚芳香基；聚甲基丙烯酸甲酯；芳香族聚碳酸酯；芳香族聚醯亞胺；及其相似者。
舉例而言，適當的倍半矽氧烷為(RSiO1.5)n型式的聚合矽酸酯材料，其中R係為有機取代基。可以使用兩種或更多不同之含矽化合物的組合。其他適合用於該多孔介電材料之含矽化合物，一般而言包括了包含矽、碳、氧、和氫原子的材料，同樣一般係稱為SiCOH介電材料。示範性的含矽化合物包括了(i)以上所討論之倍半矽氧烷；(ii)烷氧基矽烷，較佳為部份縮合之烷氧基矽烷(例如，藉由控制具有大約500至20,000之Mn的四乙氧基矽烷的水解作用來部份縮合)；(iii)具有RSiO3 與R2 SiO2 之組成的有機改性矽酸鹽，其中R係為有機取代基；以及(iv)原矽酸酯，較佳為具有Si(OR)4 之部份縮合的原矽酸酯。
再者，以矽為基之介電前驅物可包括(例如)四甲基環四矽氧烷、六甲基環四矽氧烷、八甲基環四矽氧烷。
另外一種基質前驅物包括了熱固性表苯並環丁烯(BCBs)、或者是其B－階產物。舉例而言，1,3－雙(2－雙環[4.2.0]八－1,3,5－三亞乙基四胺－3－基乙炔基)－1,1,3,3－四甲基二矽氧烷(稱為DVS－雙BCB)，其係為一種適合之B－階樹脂，市售的CYCLOTENE樹脂(來自於The Dow Chemical Company )。
另外一種基質材料包括了聚芳香基。聚芳香基，如本說明書當中所使用，包括了具有由重複的亞芳基單元所構成之主鏈的化合物，以及具有與該主鏈中之其他連結單元在一起的亞芳基單元的化合物，例如，在聚芳香基醚中的氧。市售的聚芳香基組成物，其實例包括了SiLK介電材料，其係由The Dow Chemical Company 所販售；Flare介電材料，其係由Allied Signal,Inc. 所販售，以及Velox，其係為聚(亞芳基醚)，其係由AirProducts/Shumacher 所販售。一種聚芳香基基質前驅物為熱固性表混合物、或者是聚環戊二烯酮與聚乙炔的B－階產物。可以在該組成物中使用之熱固性組成物或者是可交聯之聚芳香基的實例，包括了諸如在芳香族環上以乙炔基取代之芳香族化合物的單體；與芳香族乙炔化合物相結合之環戊二烯酮官能基化合物；以及聚芳香基醚。更佳的情形下，該熱固性組成物包括了以上所提及之單體經部分聚合的反應產物(亦即，B－階寡聚物)。
當該基質前驅物包括了熱固性表混合物、或者是聚環戊二烯酮與聚乙炔的B－階產物，該前驅物一般而言其特徵係為在該固化方法期間相對的提早發生分枝。在該固化方法中提早形成分枝基質，可將該模數下降降至最低，並且在固化方法期間，幫助讓可能的核心崩潰降至最低。
適合用於製備多孔介電材料的另一個基質前驅物實例，係為可熱固化之全氟乙烯單體(具有3個或更多個官能基)、或者是其B－階產物，例如，1,1,1－三(4－三氟乙烯氧苯)乙烷。該可熱固化之全氟乙烯單體，同樣可為利用具有二個官能基之全氟乙烯單體便利地將其共聚化。另一種適當的聚芳香基基質前驅物，係為可熱固化之雙－o－二乙炔、或者是其B－階產物。
一般而言，在該多孔介電材料中的孔洞濃度，係足夠高來降低基質的介電常數，但是足夠低來使得該基質能夠禁得起製造所希冀之微電子裝置所需的方法步驟，以維持機械完整度(舉例而言，積體電路、多重晶片模組、或者是平板顯示器裝置)。在其他的具體態樣當中，該孔洞密度一般而言足以降低該基質之介電常數至小於3.0，還有其他的具體態樣小於2.5，甚至還有其他具體態樣小於2.0。在某些具體態樣當中，該孔洞的密度可為至少5體積百分比；在其他具體態樣當中，可為至少10體積百分比，又在另外的具體態樣，可為至少20體積百分比，而且，一般而言不會超過70體積百分比，在其他的具體態樣當中，不會超過60體積百分比，此係基於該多孔基質之整體體積而論。
該基質中之孔洞的平均直徑，一般而言係小於大約20奈米(nm)；而在某些具體態樣當中則是小於2 nm；還有另外的具體態樣當中則是不大於大約1 nm。
在積體電路製造過程期間，係將包含該成孔劑材料之低k值介電材料沉積在一適當的基板上，並且暴露於一適當的能量來源，以移除該成孔劑，並且形成該多孔低k值介電結構。適當的基板包括(但不侷限於)矽、矽－絕緣體、矽鍺、二氧化矽、玻璃、氮化矽、陶瓷、鋁、銅、砷化鎵、塑膠諸如聚碳酸酯、電路板諸如FR－4與聚醯亞胺、混合電路基板、諸如氮化鋁－氧化鋁、及其相似者。這種基板可更進一步包括沉積於其上的薄膜，這種薄膜包括(但是不侷限於)金屬氮化物、金屬碳化物、金屬矽化物、金屬氧化物、以及其混合物。在一多層積體電路裝置當中，底層之絕緣、平面化的電路線，可以作用為基板。然而，基板與裝置的選擇僅受限於該基板之熱與化學穩定性的需求。
該UV輔助密封方法可以利用一種UV輻射器工具，其在一個具體態樣當中，可先利用惰性氣體來進行淨化，諸如氮氣、氦氣、或氬氣，來使得UV輻射以最低的光譜吸收率進入至鄰近的製程腔室之中，特別室波長小於大約200 nm(舉例而言)。該多孔介電材料係位於該方法腔室內部，其係於之後分別利用一希冀之製程氣體或氣體混合物來加以淨化，諸如N2 、H2 、Ar、He、Ne、H2 O蒸氣、NH3 、COz 、O2 、Cx Hy 、Cx Fy 、Cx Hz Fy 、及其混合物，其中x係為介於1和6之間的整數，y係為介於4和14之間的整數，而z係為介於1和14之間的整數，可運用在不同的應用當中。可選擇特定之製程氣體，(舉例而言)在UV暴露的期間，藉由化學反應處，如Si－OH，之交聯及/或形成，以選擇性地促進碳化、及/或氧化及/或薄膜緻密化。就這一點來說，UV固化可在沒有氧存在的條件下發生，或者是在出現氧化氣體、或還原氣體、或可具體促進碳化之氣體、或可促進交聯或類似變化之氣體的條件下發生。
該UV輔助密封方法可運用一種UV輻射器工具，其在一個具體態樣當中，首先可利用氮氣、氦氣、或者是氬氣來進行淨化，以使得該UV輻射得以最低的光譜吸收率，進入該方法腔室，特別是(例如)波長小於大約200 nm。將該多孔介電材料安置在該方法腔室內部，然後將其分別暴露於紫外光輻射以及一希冀之密封劑材料，諸如六甲基二矽烷(HMDS)、三甲基二矽烷(TMDS)、二乙基氨基三矽烷(DEATS)、三甲基氯矽烷(TCMS)等等，以及其混合物。可於紫外光暴露之前、期間、或者是之後，導入該密封劑材料。在這方面而言，UV密封可以在沒有氧存在的條件下發生，或者是在出現氧化氣體、或還原氣體、或可具體促進碳化之氣體、或可促進交聯或類似變化之氣體的條件下發生。
該UV光線來源可為微波驅動、電狐放電、介電障壁放電、或者是所產生之電子衝擊。再者，可以依照應用的需求選擇具有不同光譜分布之UV產生燈泡。
在該UV暴露期間的晶圓溫度，可以選擇性地藉由紅外線來源、光學光線來源、熱表面、或者是其本身光線來源，將其控制在範圍從室溫至425℃之間。該方法壓力可以小於、大於、或者是等於大氣壓力。典型地，係將該經UV密封之多孔介電材料進行UV處理歷時不超過或者是大約450秒，更特而言之，是介於大約5與大約300秒之間。同樣地，UV處理的進行，可以在大約室內(環境)溫度至大約450℃的溫度範圍內；小於、大於、或者是大約等於大氣壓力的製程壓力下；介於大約每平方公分0.1與大約2,000毫瓦特(mW/cm2 )之UV能量下；以及介於大約150和大約400 nm之間的UV波長光譜下。視情況而定，可以利用次環境溫度(sub－ambient temperature)來將表面緻密化穿透的程度降至最低，達到小於大約20 nm的深度。
密封的程度可以藉由使用標準分析技術來加以量測。舉例而言，可以利用穿透式電子顯微鏡以及FTIR分析。另外，由於該低k值介電材料的表面特性改變，使得可以量測到水接觸角度之變化，以測定密封的程度。再者，可以監控於濕式蝕刻速率及/或電漿蝕刻速率的變化，以提供密封有效性及穿透性的讀數。以這種方式，可以針對特定應用來將生產率以及密封之深度加以最佳化。
有利的是，已經發現到該UV固化方法能夠改良崩潰電壓行為，以及濕式抗蝕刻性，同時將該經密封之多孔介電材料整體介電常數的影響降至最低。再者，對以矽為基之介電薄膜進行觀察，FTIR分析已顯示出，對薄膜矽烷醇含量影響較小。
為了要讓本發明的揭示更容易了解，進行了以下之實施例作為參考，其係用來說明本發明的具體態樣，而並非用來侷限本發明之範疇。
實施例 實施例1
在此實施例當中，係根據本發明之揭示，於UV密封該圖案化之多孔介電材料之前與之後，量測做為節距(pitch)之函數的崩潰電壓。兩基板都進行退火。線寬為175微米。如圖1中所顯示，對於稠密陣列而言，觀察到的是在崩潰領域中的明顯改良。
實施例2
在此實施例當中，將具有多孔介電材料沉積於其上之基板，暴露於一稀釋的氫氟酸濕式蝕刻方法，歷時不同的時段。根據本發明之揭示，於惰性環境(淨化－1)當中、還原環境(淨化－2)當中、或者是一氧化環境(淨化－3)當中，將該基板暴露於UV輻射。將對照組暴露於濕式蝕刻方法，而不將其暴露任何UV下。其結果顯示於圖2中，其明白顯示在暴露於該UV輻射時，增加了濕式抗蝕刻性，並且其係取決於有發生UV暴露的環境。
雖然本發明之揭示係參照示範性的具體態樣來加以敘述，但是所屬技術領域中具有通常知識者應該要了解到的是，在不背離本發明之揭示的範疇情形下，可進行各種不同之變化且可針對其元件進行等同物的取代。此外，在不背離其基本範疇情形下，可以進行許多的修改，以使特定情形或材料適合於本發明揭示之教示。因此，本發明之揭示並不受限於特定所揭示之具體態樣，其僅係為實施本發明揭示之最佳模式，但是本發明之揭示包括了所有落入所附帶之申請專利範圍之範疇當中所有的具體態樣。
現在參照圖式，其係為示範性的具體態樣，其中相似的元件則以相同的數字編號：圖1係以圖表方式說明根據本發明之揭示，在UV處理之前與之後，崩潰電壓作為用於電路(包括多孔低k值介電層)之節距(pitch)的函數；以及圖2係說明在暴露於氫氟酸濕式蝕刻方法以後，多孔介電材料之相對損失作為時間的函數，其中將某些具有多孔介電材料沉積於其上的基板，在不同環境之中根據本發明之揭示，暴露於UV輻射。

Claims (20)

  1. 一種將置於一基板上之包含多孔低k值介電材料之中間層介電材料表面進行密封的方法，其包括：在沉積額外之層以前及/或更進一步處理以前，將包含多孔低k值介電材料之中間層介電材料表面暴露於紫外光輻射圖案一段有效將該包含多孔低k值材料之中間層介電材料表面進行密封的時間、強度、及波長，達到小於或等於大約20奈米的深度，以致造成該中間層介電材料表面實質上沒有開啟的孔洞。
  2. 根據申請專利範圍第1項之方法，其中該紫外光輻射圖案包括了小於400奈米之寬帶波長。
  3. 根據申請專利範圍第1項之方法，其中該紫外光輻射圖案包括了介於大約100與400奈米之間的寬帶波長。
  4. 根據申請專利範圍第1項之方法，其中將該多孔低k值介電材料之表面暴露於紫外光輻射圖案一段時間、強度、及波長，是在一反應性淨化環境當中。
  5. 根據申請專利範圍第1項之方法，其中將該多孔低k值介電材料之表面暴露於紫外光輻射圖案，是在N2 、H2 、Ar、He、Ne、H2 O蒸氣、NH3 、CO、CO2 、O2 、O3 、Cx Hy 、Cx Fy 、Cx Hz Fy 、及其混合物的氣氛當中，其中x係為介於1和6之間的整數，y係為介於4和14之間的整數，而z係為介於1和14之間的整數。
  6. 根據申請專利範圍第1項之方法，其中將該多孔 低k值介電材料暴露於紫外光輻射圖案一段有效將該多孔低k值材料之表面進行密封的時間、強度、及波長，達到小於或等於大約10奈米的深度。
  7. 根據申請專利範圍第1項之方法，其中將該多孔低k值介電材料暴露於紫外光輻射圖案一段有效將該多孔低k值材料之表面進行密封的時間、強度、及波長，達到大約等於平均孔洞直徑的深度。
  8. 一種用於形成電的互連結構的方法，其包括：將放置在一基板上之包含多孔低k值介電材料之中間層介電材料進行圖案化；在沉積額外之層以前及/或更進一步處理以前，將該多孔低k值介電薄膜暴露於紫外光輻射一段有效將該包含多孔低k值材料之中間層介電材料表面進行密封的時間、強度、及波長圖案，達到小於或等於大約20奈米的深度，以致造成該中間層介電材料表面實質上沒有開啟的孔洞；以及將障壁層及/或導電層沉積至該圖案化之中間層介電材料上，其中該障壁層實質上沒有針孔。
  9. 根據申請專利範圍第8項之方法，其更進一步包括在沉積該導電層之前，將該障壁層沉積至該多孔低k值介電材料上。
  10. 根據申請專利範圍第8項之方法，其中該紫外光輻射包括了小於400奈米之寬帶波長。
  11. 根據申請專利範圍第8項之方法，其中該紫外 光暴露是在N2 、H2 、Ar、He、Ne、H2 O蒸氣、NH3 、CO、CO2 、O2 、O3 、Cx Hy 、Cx Fy 、Cx Hz Fy 、及其混合物的氣氛當中執行，其中x係為介於1和6之間的整數，y係為介於4和14之間的整數，而z係為介於1和14之間的整數。
  12. 一種將置於一基板上之包含多孔低k值介電材料之中間層介電材料表面進行密封的方法，其包括：在沉積額外之層以前及/或更進一步處理以前，氧化包含多孔低k值介電材料之中間層介電材料表面，其係藉由將該包含多孔低k值介電材料之中間層介電材料表面暴露於紫外光輻射圖案一段有效在含氧氣氛中將該包含多孔低k值材料之中間層介電材料表面進行密封的時間、強度、及波長，達到小於或等於大約20奈米的深度。
  13. 根據申請專利範圍第12項之方法，其中該紫外光輻射圖案包括了小於400奈米之寬帶波長。
  14. 根據申請專利範圍第12項之方法，其更進一步包括在將該多孔低k值介電材料暴露於紫外光輻射之後，將該多孔低k值介電材料進行退火。
  15. 一種將置於一基板上之包含多孔低k值介電材料之中間層介電材料表面進行密封的方法，其包括：在沉積額外之層以前及/或更進一步處理以前，碳化包含多孔低k值介電材料之中間層介電材料表面，其係藉由將該包含多孔低k值介電材料之中間層介電材料表面暴露於紫外光輻射圖案一段有效將該包含多孔低k值材料之 中間層介電材料表面進行密封的時間、強度、及波長，達到小於或等於大約20奈米的深度。
  16. 根據申請專利範圍第15項之方法，其中該紫外光輻射包括了小於400奈米之寬帶波長。
  17. 根據申請專利範圍第15項之方法，其更進一步包括在將該多孔低k值介電材料暴露於紫外光輻射之後，將該多孔低k值介電材料進行退火。
  18. 一種將置於一基板上之包含多孔低k值介電材料之中間層介電材料表面進行密封的方法，其包括：在沉積額外之層以前及/或更進一步處理以前，緻密化包含多孔低k值介電材料之中間層介電材料表面，其係藉由將該包含多孔低k值介電材料之中間層介電材料表面暴露於紫外光輻射圖案一段有效將該包含多孔低k值材料之中間層介電材料表面進行密封的時間、強度、及波長，達到小於或等於大約20奈米的深度。
  19. 根據申請專利範圍第18項之方法，其中該紫外光輻射包括了小於400奈米之寬帶波長。
  20. 根據申請專利範圍第18項之方法，其更進一步包括在將該多孔低k值介電材料暴露於紫外光輻射之後，將該多孔低k值介電材料進行退火。
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