US20020005583A1 - Semiconductor device and fabrication process therefor - Google Patents

Semiconductor device and fabrication process therefor Download PDF

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Publication number
US20020005583A1
US20020005583A1 US09/726,599 US72659900A US2002005583A1 US 20020005583 A1 US20020005583 A1 US 20020005583A1 US 72659900 A US72659900 A US 72659900A US 2002005583 A1 US2002005583 A1 US 2002005583A1
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United States
Prior art keywords
semiconductor device
electrode layer
pad
corner
near
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Granted
Application number
US09/726,599
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US6417575B2 (en
Inventor
Shigeru Harada
Takeru Matsuoka
Hiroki Takewaka
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Renesas Electronics Corp
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Mitsubishi Electric Corp
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Priority to JP2000170332A priority Critical patent/JP4979154B2/en
Priority to JP2000-170332(P) priority
Priority to JP2000-170332 priority
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Assigned to MITSUBISHI DENKI KABUSHIKI KAISHA reassignment MITSUBISHI DENKI KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HARADA, SHIGERU, MATSUOKA, TAKERU, TAKEWAKA, HIROKI
Publication of US20020005583A1 publication Critical patent/US20020005583A1/en
Application granted granted Critical
Publication of US6417575B2 publication Critical patent/US6417575B2/en
Assigned to RENESAS ELECTRONICS CORPORATION reassignment RENESAS ELECTRONICS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MITSUBISHI DENKI KABUSHIKI KAISHA
Assigned to RENESAS ELECTRONICS CORPORATION reassignment RENESAS ELECTRONICS CORPORATION CHANGE OF ADDRESS Assignors: RENESAS ELECTRONICS CORPORATION
Application status is Active legal-status Critical
Adjusted expiration legal-status Critical

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