CN101099232A - 多孔低k介电膜的紫外辅助孔密封 - Google Patents

多孔低k介电膜的紫外辅助孔密封 Download PDF

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CN101099232A
CN101099232A CNA2005800465065A CN200580046506A CN101099232A CN 101099232 A CN101099232 A CN 101099232A CN A2005800465065 A CNA2005800465065 A CN A2005800465065A CN 200580046506 A CN200580046506 A CN 200580046506A CN 101099232 A CN101099232 A CN 101099232A
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dielectric material
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C·沃尔弗里德
O·埃斯科尔恰
I·贝里
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Abstract

用于密封多孔低k介电膜的方法，通常包括将多孔低k介电膜的表面暴露于紫外(UV)辐射，其强度、时间、波长和环境有效地通过碳化、氧化和/或膜致密，密封该多孔介电表面。该多孔低k介电材料的表面被密封到小于或等于约20纳米的深度，其中该表面在UV暴露之后基本不含孔。

Description

多孔低K介电膜的紫外辅助孔密封
背景技术
本发明总体涉及半导体装置的制备，更特别地，涉及一种用于半导体装置中的多孔低k介电材料的紫外辅助孔密封方法。
随着半导体和其它微电子器件的尺寸逐渐变小，对于器件元件的需求不断提高。例如，对于更小的器件，防止互连线之间的电容性串音明显变得更加重要。电容性串音通常是导线之间的距离和位于导线之间的材料的介电常数(k)的函数。在使用具有较低介电常数的新型绝缘体将导线彼此电隔离方面，投入了相当大的关注，因为尽管二氧化硅(SiO2)由于其相对较好的电和机械性能通常用于这种装置，然而当装置降至更小尺寸时，需要介电常数比约为4的SiO2值更低。需要这些新型的低k(即小于4的介电常数)材料用作例如层间绝缘(ILD)。
为了达到较低的介电常数，人们可以使用具有较低介电常数的材料，和/或为材料引入多孔性，由于空气的介电常数指定为1，因此其能够降低介电常数。通过多种方法在低k材料中引入了多孔性。在旋涂低k电介质的情况中，可以通过使用高沸点的溶剂、通过使用模板或通过基于致孔剂的方法，实现k值的降低。然而，在半导体装置的制备中，多孔低k材料的集成通常被证明是困难的。
例如，由于多孔低k介电材料的开放性(open nature)，在后续工艺(即在形成多孔低k介电材料之后)中使用的工艺气体和化学物质会扩散到多孔网络中，并会被截留在此，在此其会造成损害，以及改变介电常数。而且，与表面直接相邻的孔会造成在其上沉积和/或形成的后续层(例如阻挡层)中形成针孔。
因此，在本领域需要提供对用于集成为半导体装置的多孔低k介电材料的改进方法。因为存在现有技术中提到的这些问题，因此需要在沉积其它层和/或在进一步处理之前需要将多孔低k介电材料密封。多孔低k介电材料表面的密封将有利于防止工艺气体和化学物质的渗透(和截留)。而且，密封将为其它层在其上的涂覆/沉积提供连续的表面层。因此，可以基本防止在后续层中形成针孔。
发明内容
在此公开了用于多孔低k介电材料的紫外辅助孔密封方法。在一种实施方式中，一种用于密封位于基体之上的多孔低k介电材料的方法，包括将多孔低k介电材料的表面暴露于紫外辐射图形(pattern)，其时间、强度和波长将该多孔低k材料的表面有效密封到小于或等于约20纳米的深度，其中该表面基本不含孔。
在其它实施方式中，一种制备电互联结构的方法，包括将位于基体上的多孔低k介电材料形成图形；将多孔低k介电膜暴露于紫外辐射，其时间、强度和波长图形将该多孔低k材料的表面有效密封到小于或等于约20纳米的深度，其中该表面基本不含孔；以及在形成图形的多孔低k介电材料上沉积阻挡层和/或导电层。
在其它实施方式中，一种用于密封位于基体之上的多孔低k介电材料的方法，包括通过将其表面暴露于紫外辐射图形，其时间、强度和波长在包含氧气的气氛中将该多孔低k材料的表面有效密封到小于或等于约20纳米的深度，将多孔低k介电材料的表面氧化。
在其它实施方式中，一种用于密封位于基体之上的多孔低k介电材料的方法，包括通过将其表面暴露于紫外辐射图形，其时间、强度和波长将该多孔低k材料的表面有效密封到小于或等于约20纳米的深度，使多孔低k介电材料的表面碳化。
在其它实施方式中，一种用于密封位于基体之上的多孔低k介电材料的方法，包括通过将其表面暴露于紫外辐射图形，其时间、强度和波长有效将该多孔低k材料的表面密封到小于或等于约20纳米的深度，使多孔低k介电材料的表面致密。
在其它实施方式中，一种用于密封沉积于基体之上的介电材料的孔的方法，包括将该基体暴露于紫外辐射，改变表面键合，以使键合部位用于后续材料施用，然后用其密封孔。
在其它实施方式中，一种用于密封沉积于基体之上的介电材料的孔的方法，包括在氧化或还原气氛存在下将该基体暴露于紫外辐射，改变表面键合，以使键合部沉积用于后续材料施用，然后用其密封孔。
在其它实施方式中，一种用于密封沉积于基体之上的介电材料的孔的多步方法，包括在存在或不存在氧化或还原气氛下，将该介电材料暴露于紫外辐射，改变表面键合，然后沉积可选择性与由UV过程形成的键合进行反应的密封材料，然后用其密封孔。
在其它实施方式中，一种用于密封沉积于基体之上的介电材料的孔的多步方法，包括在存在或不存在氧化或还原气氛下，将该介电材料暴露于密封材料或密封前驱体，然后将基体暴露于紫外辐射，使密封剂和基体进行反应和/或改变密封材料的键合结构，然后用其密封孔。
在其它实施方式中，一种用于密封沉积于基体之上的介电材料的孔的方法，包括在存在或不或不存在氧化或还原气氛下，将该介电材料暴露于密封材料，同时将基体暴露于紫外辐射，在此紫外辐射与密封剂、与基体和/或两者发生反应，然后用其密封孔。
通过下面的附图和具体实施方式对以上所述和其它特征进行示例性说明。
附图简述
现在参照附图，其是示例性的实施方式，其中相同的元件使用相同的编号：
图1示出了击穿电压作为包括依照本发明的UV处理之前和之后的多孔低k介电层的电路的节距的函数。
图2示出了在暴露于氢氟酸湿法蚀刻工艺之后的多孔介电材料的相对损失作为时间的函数，其中一些在其上沉积有多孔介电材料的基体依照本发明暴露于各种环境中的UV辐射。
具体实施方式
本发明一般地涉及一种密封多孔低k介电膜的方法。该方法一般地包括将该多孔低k介电膜的多孔表面暴露于紫外(UV)辐射，其时间、波长、密度和气氛有效地密封该低k介电材料的表面，通过沉积一种当随后与紫外辐射发生反应时密封孔的材料，和/或通过沉积一种当同时与紫外辐射发生反应时密封孔的材料，借助于碳化、氧化、膜致密、产生能够使随后密封孔的沉积材料进行化学反应的表面反应性部位，有效地密封该多孔介电表面。该UV辅助密封方法有利地提供一种用于将多孔低k介电材料集成在集成电路制造方法中的方法。非必要地，在暴露于紫外辐射之后，可以使用炉内退火或类似工艺使各种沉积层退火，如一些应用和制造方法中可能需要的那样。在此所用的术语“多孔低k介电材料”通常是指包括多孔基体的材料，其中的孔径小于约2纳米(nm)，形成的介电常数(k)小于约3.0。
改进的电互联结构的形成方法通常包括在基体上形成多孔低k介电材料，然后将其表面暴露于紫外辐射图形，其时间、波长、密度和气氛有效地密封该低k介电材料的表面，或产生用于涂覆的密封材料的键合部位。在一种实施方式中，该紫外辐射有效地将该多孔低k介电材料的暴露表面密封到20纳米的深度，更优选深度为约10纳米，甚至更优选地该深度等于平均孔径。尽管介电材料的密封可以超过20纳米，但由于密封渗透会影响低k材料的体介电行为，因此通常在高级半导体制造过程中优选深度更小。研究发现将多孔低k介电材料密封到至少这些深度，基本防止了随后在进一步加工中对介电材料的损害。同样地，在后续加工中所用的工艺气体和化学物质不能渗透到多孔低k介电材料的多孔结构中。而且，通过密封该多孔低k介电层，可以沉积和/或涂覆基本不含针孔的后续层(例如阻挡层或扩散层)，因为下面的多孔介电材料包括基本没有针孔的(即密封的)表面。在集成电路的制造中，扩散层或阻挡层会是重要的，因为这些层可以用于例如在层间介电材料和随后沉积的导电材料(例如铜金属互联)之间形成边界。
可以用于形成多孔低k介电膜的本领域技术人员通常使用的方法中的一些实例包括化学气相沉积(CVD)、等离子体增强化学化学气相沉积(PECVD)、高密度PECVD、光子辅助CVD、等离子体-光子辅助CVD、低温CVD、化学辅助气相沉积、热丝CVD、液体聚合物前驱体的CVD、超临界流体沉积或传递聚合(transportpolymerization)(“TP”)。其它可用于形成膜的方法包括旋涂、浸涂、Langmuir-blodgett自组装或雾化沉积方法(misting depositionmethod)。
在此所用的术语“多孔低k介电材料”通常是指包含基质(matrix)和致孔剂的材料，其中在除去致孔剂后的介电材料具有多孔结构。术语“致孔剂材料”通常是指本领域中已知的基于牺牲有机物(sacrificialorganics)的材料，在将其去除后在低k介电膜中产生或形成孔。该致孔剂材料在基体或基体前驱体中形成区域(或离散区域)，一旦去除，其会在基体或基体前驱体中形成孔。优选地，该区域应当不大于最终所需的孔尺寸。在本发明中，适合的致孔剂材料并不用于限定，可以包括那些一旦暴露于热和/或光辐射会降解形成挥发性碎片或基团的材料，例如其能够在惰性气体流下从基体材料或基体前驱体材料中去除。这样，一旦暴露于辐射，在基体内部通常从下表面到上表面各处会形成孔。同样地，形成的表面也会包括多个针孔。
那些在本领域中通常被描述为热不稳定的、可加热去除的、光化学不稳定的、光化学可去除的等的致孔剂材料通常都适用于形成多孔低k介电材料。在已授权的美国专利6653358“A CompositionContaining a Cross-linkable Matrix Precursor and a Porogen and aPorous Matrix Prepared Thereform”中对这种材料进行了一般性的描述，其内容整体引入此处作为参考。示例性的致孔剂材料通常包括但不局限于烃类材料、不稳定的有机基团、溶剂、可分解的聚合物、表面活性剂、树状大分子、超支化聚合物、聚亚烷基氧化合物或其组合。
适合的基体和基体前驱体通常包括但不用于局限于：含硅聚合物或这种聚合物的前驱体，例如倍半硅氧烷，例如烷基(优选低级烷基，例如甲基)倍半硅氧烷、芳基(例如苯基)或烷基/芳基倍半硅氧烷，以及倍半硅氧烷的共聚物(例如聚酰亚胺与倍半硅氧烷的共聚物)；.金刚石基的热固性组合物；交联的聚苯；聚芳基醚；聚苯乙烯；交联的聚亚芳基化合物；聚甲基丙烯酸甲酯；芳香族聚碳酸酯；芳香族聚酰亚胺；等等。
例如，适合的倍半硅氧烷是(RSiO1.5)n型的聚合硅酸盐材料，其中R为有机取代基。也可以使用两种或多种不同的含硅化合物的组合。其它使用用于多孔介电材料的含硅化合物包括含硅、碳、氧和氢原子的材料，通常也称为SiCOH介电材料。示例性的含硅化合物包括(i)上述讨论的倍半硅氧烷，(ii)烷氧基硅烷，优选部分缩合的烷氧基硅烷(例如通过控制Mn为约500～20000的四乙氧基硅烷的水解，部分缩合)，(iii)具有RSiO3和R2SiO3成分的有机改性硅酸酯，其中R为有机取代基，以及(iv)正硅酸酯，优选具有Si(OR)4成分的部分缩合的正硅酸酯。
仍进一步地，硅基介电材料前驱体可以包括例如四甲基环四硅氧烷、六甲基环四硅氧烷、八甲基环四硅氧烷。
另一种类的基体前驱体包括热固性苯并环丁烯(BCBs)或其b阶段产物。例如1，3-二(2-双环[4.2.0]八-1，3，5-三亚乙基四胺-3-基乙炔基)-1，1，3，3-四甲基二硅氧烷(称作DVS-bisBCB)是适合的，其b阶段树脂可作为CYCLOTENE树脂(从The Dow Chemical Company)购得。
另一种类的基体材料包括聚亚芳基化合物。此处所用的聚亚芳基化合物包括具有由重复亚芳基单元构成的主链的化合物，以及在主链中具有亚芳基单元与其它连接单元(例如聚亚芳基醚中的氧)的化合物。可购到的聚亚芳基化合物包括可购自The Dow Chemical Company的SiLK介电材料、可购自Allied Signal，Inc.的Flare介电材料、以及可购自AirProducts/Shumacher的聚亚芳基醚Velox。一种类型的聚亚芳基化合物是聚环戊二烯酮和聚乙炔的热固性混合物或b阶段产物。热固性组合物或可用于该组合物的可交联的聚亚芳基化合物的实例包括例如含在芳环上彼此相邻的乙炔取代基的芳香族化合物的单体；与芳香族乙炔化合物相结合的环戊二烯酮官能化合物；以及聚亚芳基醚。更优选地，该热固性组合物包括上述单体的部分聚合反应产物(即b阶段低聚体)。
当该基体前驱体包括聚环戊二烯酮和聚乙炔化合物的热固性混合物或b阶段产物时，该前驱体的特征通常可使在固化工艺过程中相对较早发生分支。在固化工艺中较早形成分支基体会使基体的模量下降最小化，并且能够有助于使固化工艺过程中可能的孔坍塌最小化。
适用于制备该多孔介电材料的基体前驱体的另一实例是一种热固性全氟乙烯单体(具有3个或更多官能团)或其b阶段产物，例如1，1，1-三(4-三氟乙烯氧基苯基)乙烷。该热固性的全氟乙烯单体也可以方便地和具有两个官能团的全氟乙烯单体共聚合。另一种适合的聚亚芳基基质前驱体是热固性的二-o-丁二炔或其b阶段产物。
通常，多孔介电材料中的孔的密集度足够高，以降低基体的介电常数，但其足够低，以使基体可以经受在所需微电子器件的制备中所需的工艺步骤，以保持其机械完整性(例如，集成电路、多片模块、或平板显示装置)。在其它实施方式中，孔的密度通常足以将基体的介电常数降低到小于3.0，在其它实施方式中小于2.5，在其它实施方式中小于2.0。在一些实施方式中，基于多孔基质总体积的孔的浓度可以小于5体积％，在其它实施方式中小于10体积％，在其它实施方式中小于20体积％，通常不超过70体积％，在其它实施方式中不超过60体积％。
基体内的孔的平均直径通常小于约20纳米(nm)，在一些实施方式中小于2nm，在其它实施方式中不超过约1nm。
在制备集成电路的过程中，将包含致孔剂材料的低k介电材料沉积在适合的基体上，将其暴露于适合的能源，去除致孔剂，形成多孔低k介电结构。适合的基体包括但不意于局限于：硅、硅绝缘体(silicon-on-insulator)、硅锗、二氧化硅、玻璃、氮化硅、陶瓷、铝、铜、砷化镓、塑料，例如聚碳酸酯、电路板，例如FR-4和聚酰亚胺、混合电路基体，例如氮化铝-氧化铝，等。这种基体可以进一步包括在其上沉积的薄膜，这种膜包括但不意于局限于金属氮化物、金属碳化物、金属硅化物、金属氧化物及其混合物。在多层集成电路装置中，绝缘的平坦化电路线的最下层也可以用作基体。然而，基体和装置的选择仅由基体的热和化学稳定性所限制。
该UV辅助的密封方法可以使用UV辐射器工具，在一种实施方式中，其可以首先用氮气、氦气或氩气吹扫，使进入工艺腔的UV辐射具有最小的光谱吸收，特别对于例如小于约200nm的波长。将该多孔介电材料置于工艺腔内，然后分别用所需的工艺气体或气体混合物吹扫，对于不同应用可以使用例如N2、H2、Ar、He、Ne、H2O蒸汽、NH3、CO2、O2、CxHy、CxFy、CxHzFy及其混合物，其中x为1～6的整数，y为4～14的整数，z为1～14的整数。可以选择特定的工艺气体通过例如在UV暴露过程中交联和/或形成例如Si-OH的化学活性区域选择性促使碳化和/或氧化和/或膜致密。在这点上，UV密封可以发生在没有氧气存在，或有氧化气体存在，或有还原气体存在，或有特别促进碳化的气体存在，或有促进交联的气体存在，或类似的变化存在下。
该UV辅助的密封方法可以使用UV辐射器工具，在一种实施方式中，其可以首先用氮气、氦气或氩气吹扫，使进入工艺腔的UV辐射具有最小的光谱吸收，特别对于例如小于约200nm的波长。将该多孔介电材料置于工艺腔内，然后将其分别暴露于紫外辐射和所需的密封材料，例如六甲基二硅烷(HMDS)、三甲基二硅烷(TMDS)、二乙基氨基三硅烷(DEATS)、三甲基氯硅烷(TCMS)等，及其混合物。可以在紫外光暴露之前、期间或之后，引入密封材料。在这点上，UV密封可以发生在没有氧气存在，或有氧化气体存在，或有还原气体存在，或有特别促进碳化的气体存在，或有促进交联的气体存在，或类似的变化存在下。
该UV光源可以是微波激励、电弧放电、介质阻挡放电或电子碰撞产生的。而且，可以根据应用选择具有不同光谱分布的UV产生灯泡。
在UV暴露过程中晶片温度可以控制在室温到425℃的范围内，非必要地通过红外光源、光学光源、热表面或光源本身。工艺压力可以小于、大于或等于大气压力。通常，UV密封的多孔介电材料经UV处理不超过或约为450秒，更特别地，在约5～约300秒之间。而且，UV处理可以在约室温(环境温度)～约450℃的温度下，小于、大于或约等于大气压力的压力下，在约0.1～约2000毫瓦/平方厘米(mW/cm2)的UV功率、和约150～约400nm之间的UV波长光谱的情况下进行。非必要地，也可以使用低于环境温度，以使表面致密化渗透的程度最小化到小于20nm的厚度。
可以使用标准分析技术测定密封程度。例如，可以使用透射电镜以及FTIR分析。而且，因为低k介电材料的表面性质发生改变，因此可以测量水接触角的变化以确定密封程度。除此之外，也可以监测湿法蚀刻速率和/或等离子体蚀刻速率的变化，以提供密封效果和渗透的指示。这样，对于一种特定的用途，可以优化其生产量和密封深度。
有利地，研究发现UV固化方法改进了击穿电压行为和抗湿法蚀刻性质，同时对密封的多孔介电材料的体介电常数的影响最小化。而且，FTIR分析显示对于硅基介电膜来说，观察到对膜硅烷醇含量的影响较小。
为使本发明可以更容易得到理解，参照下面的实施例，其用于解释本发明，不用于限定其范围。
实施例
实施例1.在该实施例中，在依照本发明UV密封形成图形的多孔介电材料之前和之后测量了击穿电压作为节距的函数。两种基体都经过退火。线宽175微米。如图1所示，对于致密性观察到击穿场的明显改进。
实施例2.在该实施例中，将其上沉积多孔介电材料的基体暴露于稀氢氟酸湿法蚀刻工艺不同时间段，将基体在惰性环境中(吹扫-1)、还原环境中(吹扫-2)、或氧化环境中(吹扫-3)，暴露于依照本发明的UV辐射。对照样暴露于没有任何UV暴露的湿法蚀刻工艺。结果示于图2，其明确表现出暴露于UV辐射的抗湿法蚀刻性质的提高，以及对UV暴露发生的环境的依赖。
尽管本发明是参考示例性的实施方式进行描述的，但本领域的技术人员将理解在不脱离本发明范围的情况下，可以进行各种改变，可以用等价物代替其中的要素。此外，为了使特定的情况或材料适应本发明的教导，可以在不脱离其基本范围的情况下进行许多改进。因此，预期本发明并不限定于上述作为预期用于施行本发明的最佳方式的特定实施方式，而本发明将包括所有落入后附权利要求范围内的所有实施方式。

Claims (29)

1.一种用于密封位于基体之上的多孔低k介电材料的方法，包括：
将多孔低k介电材料的表面暴露于紫外辐射图形，其时间、强度和波长将该多孔低k材料的表面有效密封到小于或等于约20纳米的深度，其中该表面基本不含开口孔。
2.如权利要求1的方法，其中紫外辐射图形包括小于400nm的宽频带波长。
3.如权利要求1的方法，其中紫外辐射图形包括约100～400纳米之间的宽频带波长。
4.如权利要求1的方法，其中将多孔低k介电材料的表面暴露于紫外辐射图形一定时间、强度和波长是在反应性吹扫环境中进行的。
5.如权利要求1的方法，其中将多孔低k介电材料的表面暴露于紫外辐射图形是在N2、H2、Ar、He、Ne、H2O蒸汽、NH3、CO、CO2、O2、O3、CxHy、CxFy、CxHzFy及其混合物的气氛中进行的，其中x为1～6的整数，y为4～14的整数，z为1～14的整数。
6.如权利要求1的方法，其中将多孔低k介电材料暴露于紫外辐射图形，其时间、强度和波长有效将该多孔低k材料的表面密封到小于或等于约10纳米的深度。
7.如权利要求1的方法，其中将多孔低k介电材料暴露于紫外辐射图形，其时间、强度和波长将该多孔低k材料的表面有效密封到约等于平均孔径的深度。
8.一种制备电互联结构的方法，包括：
将位于基体上的多孔低k介电材料形成图形；
将多孔低k介电材料的薄膜暴露于紫外辐射，其时间、强度和波长图形将该多孔低k材料的表面有效密封到小于或等于约20纳米的深度，其中该表面基本不含开口孔；以及
在形成图形的多孔低k介电材料上沉积阻挡层和/或导电层，其中该阻挡层基本不合针孔。
9.如权利要求8的方法，进一步包含在沉积导电层之前，在多孔低k介电材料上沉积阻挡层。
10.如权利要求8的方法，其中该紫外辐射包括小于400纳米的宽频带波长。
11.如权利要求8的方法，其中该紫外暴露是在N2、H2、Ar、He、Ne、H2O蒸汽、NH3、CO、CO2、O2、O3、CxHy、CxFy、CxHzFy及其混合物的气氛中进行的，其中x为1～6的整数，y为4～14的整数，z为1～14的整数。
12.一种用于密封位于基体之上的多孔低k介电材料的方法，包括：
通过将多孔低k介电材料的表面暴露于紫外辐射图形，其时间、强度和波长在包含氧气的气氛中将该多孔低k材料的表面有效密封到小于或等于约20纳米的深度，从而将多孔低k介电材料的表面氧化。
13.如权利要求12的方法，其中该紫外辐射图形包括小于400纳米的宽频带波长。
14.如权利要求12的方法，进一步包括在将多孔低k介电材料暴露于紫外辐射之后，使该多孔低k介电材料退火。
15.一种用于密封位于基体之上的多孔低k介电材料的方法，包括：
通过将多孔低k介电材料的表面暴露于紫外辐射图形，其时间、强度和波长将该多孔低k材料的表面有效密封到小于或等于约20纳米的深度，使多孔低k介电材料的表面碳化。
16.如权利要求15的方法，其中该紫外辐射包括小于400纳米的宽频带波长。
17.如权利要求15的方法，进一步包括在将多孔低k介电材料暴露于紫外辐射之后，使该多孔低k介电材料退火。
18.一种用于密封位于基体之上的多孔低k介电材料的方法，包括：
通过将多孔低k介电材料的表面暴露于紫外辐射图形，其时间、强度和波长有效将该多孔低k材料的表面密封到小于或等于约20纳米的深度，使多孔低k介电材料的表面致密。
19.如权利要求19的方法，其中该紫外辐射包括小于400纳米的宽频带波长。
20.如权利要求19的方法，进一步包括在将多孔低k介电材料暴露于紫外辐射之后，使该多孔低k介电材料退火。
21.一种用于密封位于基体之上的多孔低k介电材料的方法，包括：
将多孔低k介电材料的表面暴露于紫外辐射图形，其时间、强度和波长有效生成表面键合并在表面上形成反应性部位；以及
使反应性部位与一种材料反应，密封该表面，其中在将该表面与该材料反应后，该表面基本不含开口孔。
22.如权利要求21的方法，其中将多孔低k介电材料图形的表面暴露于紫外辐射图形一定时间、强度和波长进一步包括在暴露过程中引入反应性气体。
23.如权利要求22的方法，其中该反应性气体由N2、H2、H2O蒸汽、NH3、CO、CO2、O2、O3、CxHy、CxFy、CxHzFy及其混合物构成，其中x为1～6的整数，y为4～14的整数，z为1～14的整数。
24.一种用于密封位于基体之上的多孔低k介电材料的方法，包括：
将多孔低k介电材料的表面暴露于密封材料和紫外辐射图形，其时间、强度和波长有效产生表面键并在表面上形成反应性部位；以及
使该密封材料进行反应密封该表面，其中该表面基本不含开口孔。
25.如权利要求24的方法，其中将多孔低k介电材料图形的表面暴露于紫外辐射图形一定时间、强度和波长进一步包括在暴露过程中引入反应性气体。
26.如权利要求25的方法，其中该反应性气体由N2、H2、H2O蒸汽、NH3、CO、CO2、O2、O3、CxHy、CxFy、CxHzFy及其混合物构成，其中x为1～6的整数，y为4～14的整数，z为1～14的整数。
27.一种用于密封位于基体之上的多孔低k介电材料的方法，包括：
将多孔低k介电材料的表面暴露于密封前驱体和紫外辐射图形，其时间、强度和波长有效产生表面键合并在表面上形成反应性部位；以及
使该密封前驱体与反应性部位和表面键合进行反应密封该表面，其中该表面基本不合开口孔。
28.如权利要求27的方法，其中在UV暴露以辅助与密封材料或密封前驱体的反应的过程中使用反应性气体。
29.如权利要求28的方法，其中该反应性气体由N2、H2、H2O蒸汽、NH3、CO、CO2、O2、O3、CxHy、CxFy、CxHzFy及其混合物构成，其中x为1～6的整数，y为4～14的整数，z为1～14的整数。
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US20060105566A1 (en) 2006-05-18
US7678682B2 (en) 2010-03-16
WO2006055346A3 (en) 2007-03-22
US20070134935A1 (en) 2007-06-14
WO2006055346A2 (en) 2006-05-26
TWI425569B (zh) 2014-02-01
CN100530564C (zh) 2009-08-19
EP1812962A2 (en) 2007-08-01

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