JP2008258488A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 48
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 141
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 108
- 238000000034 method Methods 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 41
- 230000004888 barrier function Effects 0.000 claims description 34
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 33
- 238000000137 annealing Methods 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 30
- 238000004090 dissolution Methods 0.000 abstract description 3
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- 150000002978 peroxides Chemical class 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
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- 229920005989 resin Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 239000011259 mixed solution Substances 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- AKQNYQDSIDKVJZ-UHFFFAOYSA-N triphenylsilane Chemical compound C1=CC=CC=C1[SiH](C=1C=CC=CC=1)C1=CC=CC=C1 AKQNYQDSIDKVJZ-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Abstract
【解決手段】第1工程において、下地11の上側表面11aに、SiO2GeO2膜15を形成する。次いで、第2工程において、SiO2GeO2膜15を水洗することによって、SiO2GeO2膜に含まれるGeO2を溶解する。この溶解によって、SiO2GeO2膜からGeO2が除去されるため、SiO2GeO2膜においてGeO2に相当する部分が、空孔19となる。そして、GeO2が除去されることによって残存したSiO2は、膜中に空孔を有する多孔質SiO2膜17となる。
【選択図】図1
Description
第1の実施の形態では、SiO2GeO2膜を形成し、しかる後、このSiO2GeO2膜を水洗することによって、多孔質SiO2膜を形成する半導体装置の製造方法について説明する。なお、この第1の実施の形態では、特に、SiO2GeO2膜を、SiGe膜を形成し、しかる後、このSiGe膜を酸化することによって形成する場合について説明する。この製造方法は、第1工程及び第2工程を含んでいる。以下、第1工程から順に各工程につき説明する。
第2の実施の形態では、上述の第1の実施の形態と同様に、SiO2GeO2膜を形成し、しかる後、このSiO2GeO2膜を水洗することによって、多孔質SiO2膜を形成する半導体装置の製造方法について説明する。なお、この第2の実施の形態では、特に、SiO2GeO2膜を、Si含有ガス及びGe含有ガスの混合ガスと、O2とを原料ガスとして用いて形成する場合について説明する。この製造方法は、第1工程及び第2工程を含んでいる。以下、第1工程から順に各工程につき説明する。
第1の変形例では、上述した第1の実施の形態、または第2の実施の形態において形成した多孔質SiO2膜17(図1(C)または図2(B)参照)に対して、アニールを行う半導体装置の製造方法について説明する。
第2の変形例では、上述した第1の実施の形態、第2の実施の形態、または第1の変形例において形成した構造体(図1(C)または図2(B)参照)に、配線を形成する半導体装置の製造方法について説明する。
13:SiGe膜
15:SiO2GeO2膜
17:多孔質SiO2膜
19:空孔
21:配線溝
23:バリア層
23a:内側バリア層
23b:外側バリア層
25:配線材料層
25a:内側配線材料層
25b:外側配線材料層
27:配線
Claims (9)
- 下地の上側表面に、SiO2GeO2膜を形成する第1工程と、
該SiO2GeO2膜を水洗することによって、該SiO2GeO2膜に含まれるGeO2を溶解して、該SiO2GeO2膜から多孔質SiO2膜を形成する第2工程と
を含むことを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記第1工程は、前記下地の上側表面に、Siを含有したガス及びGeを含有したガスの混合ガスを、原料ガスとして用いてSiGe膜を形成し、しかる後、該SiGe膜を酸化することによって、該SiGe膜から前記SiO2GeO2膜を形成する工程である
ことを特徴とする半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法において、
前記混合ガスとして、SiH4及びGeH4の混合ガス、またはSiH4及びGeF4の混合ガスのうちのいずれか一方を用いる
ことを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記第1工程は、前記下地の上側表面に、Siを含有したガス及びGeを含有したガスの混合ガスと、O2とを原料ガスとして用いて前記SiO2GeO2膜を形成する工程である
ことを特徴とする半導体装置の製造方法。 - 請求項4に記載の半導体装置の製造方法において、
前記混合ガスとして、SiH4及びGeH4の混合ガス、またはSiH4及びGeF4の混合ガスのうちのいずれか一方を用いる
ことを特徴とする半導体装置の製造方法。 - 請求項4または5に記載の半導体装置の製造方法において、
前記第1工程の後であって前記第2工程の前に、前記SiO2GeO2膜に対してアニールを行う
ことを特徴とする半導体装置の製造方法。 - 請求項1ないし6のいずれか一項に記載の半導体装置の製造方法において、
前記第2工程の後に、前記多孔質SiO2膜に対してアニールを行うアニール工程を含む
ことを特徴とする半導体装置の製造方法。 - 請求項1ないし6のいずれか一項に記載の半導体装置の製造方法において、
前記第2工程の後に、前記多孔質SiO2膜の上側表面から、該多孔質SiO2膜内へ凹型の配線溝を形成する配線溝形成工程と、
該配線溝の内側側面及び内側底面を覆う内側バリア層と、前記配線溝の外側であって、前記多孔質SiO2膜の上側表面を覆う外側バリア層との連続した一体的な膜として、バリア層を形成するバリア層形成工程と、
前記配線溝の内側であって、該配線溝を、前記多孔質SiO2膜の上側表面と同一面位置まで埋め込む内側配線材料層と、該内側配線材料層の上側及び前記外側バリア層の上側表面を覆う外側配線材料層とを含む、配線材料層を形成する配線材料層形成工程と、
前記外側配線材料層及び前記外側バリア層を除去するとともに、前記配線溝の内側に残存した前記内側配線材料層から配線を残存形成する配線形成工程と
を含むことを特徴とする半導体装置の製造方法。 - 請求項8に記載の半導体装置の製造方法において、
前記第2工程の後であって前記配線溝形成工程の前に、前記多孔質SiO2膜に対してアニールを行うアニール工程
を含むことを特徴とする半導体装置の製造方法。
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