JP4874614B2 - 多孔質の低誘電率組成物並びにそれを作製及び使用するための方法 - Google Patents
多孔質の低誘電率組成物並びにそれを作製及び使用するための方法 Download PDFInfo
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- JP4874614B2 JP4874614B2 JP2005282302A JP2005282302A JP4874614B2 JP 4874614 B2 JP4874614 B2 JP 4874614B2 JP 2005282302 A JP2005282302 A JP 2005282302A JP 2005282302 A JP2005282302 A JP 2005282302A JP 4874614 B2 JP4874614 B2 JP 4874614B2
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- porogen
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Classifications
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Description
[ポロゲン前駆体/ケイ素含有前駆体の化学量論量の変化]
比較の膜を、シクロヘキサノン(CHO)とジエトキシメチルシラン(DEMS)の混合物から堆積させた。堆積条件は以下の通りであった。即ち、プラズマ電力が450ワット、反応チャンバーの圧力が8torr、電極の間隔が350ミリインチ、キャリヤーガスが流量210sccmのヘリウム、基材温度が225℃であった。反応チャンバーへの化学物質の合計流量を一定にしたままにして、CHOとDEMSの流量を変化させて反応チャンバーに導入されるCHOとDEMSの比を制御した。膜は、真空下で5分間、広域UV光(λ=200〜400nm)に膜をさらすことにより後処理した。
[ポロゲン前駆体の官能基]
ポロゲン前駆体の構造及び/又は組成はまた、膜の特性を制御するのに使用することができる。複合膜は、CHO又は1,2,4−トリメチルシクロヘキサン(TMC)から堆積した。表2は、これら前駆体の無希釈の液体特性を比較している。CHO前駆体はケトン官能基を有する6炭素環からなり、一方で、TMC前駆体は3つのメチル基が1、2及び4−位に結合した6炭素環を有する。
複合膜を、モルパーセント比22/78のシクロヘキサノン(CHO)とジエトキシメチルシラン(DEMS)の混合物から堆積させた。堆積条件は以下の通りであった。即ち、プラズマ電力が600ワット、反応チャンバーの圧力が8torr、電極の間隔が350ミリインチ、キャリヤーガスが流量200sccmのCO2、添加ガスが流量10sccmのO2、堆積速度が450ナノメートル(nm)/分、基材温度が250℃であった。反応チャンバーへの化学物質の合計流量を一定にしたままにして、CHOとDEMSの流量を変化させて反応チャンバーに導入されるCHOとDEMSの比を制御した。膜は、真空下で5分間、広域UV光(λ=200〜400nm)に膜をさらすことにより後処理し、収縮の割合は30%であった。堆積されたままの膜とUV処理にさらした後の最終的な膜の種々の特性を表5に与える。
Claims (12)
- 多孔質の有機ケイ酸塩ガラス膜を基材上に形成するための化学気相成長法であって、
(a)1つ又は複数のエポキシド基を含有しかつ一般式CnH2n+2-2x-2y-2zOzを有する炭化水素構造体であって、式中、n=1〜12であり、xが構造中の環状環の数であって0〜4であり、yが構造中の不飽和結合の数であって0〜nであり、zが構造中のエポキシド基の数であって1〜4であり、エポキシド基が環状環又は直鎖に結合することができる炭化水素構造体;
(b)1つ又は複数のアルデヒド基を含有しかつ一般式CnH2n+2-2x-2y-2zOzを有する炭化水素構造体であって、式中、n=1〜12であり、xが構造中の環状環の数であって0〜4であり、yが構造中の不飽和結合の数であって0〜nであり、zが構造中のアルデヒド基の数であって1〜4である炭化水素構造体;
(c)1つ又は複数のケトン基を含有しかつ一般式CnH2n+2-2x-2y-2zOzを有する炭化水素構造体であって、式中、n=1〜12であり、xが構造中の環状環の数であって0〜4であり、yが構造中の不飽和結合の数であって0〜nであり、zが構造中のケトン基の数であって1〜4であり、1つ又は複数のケトン基が環外及び/又は環内にあることができる炭化水素構造体;並びに
(d)それらの混合物
からなる群より選択された構造を有するポロゲン前駆体と、
式SiR1 n(OR2)p(O(O)CR3)4-(n+p)によって表され、式中、R1が独立してH又はC1〜C4の直鎖又は分枝の、飽和の、単又は複不飽和の、環状の、部分的に又は完全にフッ素化された炭化水素、R2が独立してC1〜C6の直鎖又は分枝の、飽和の、単又は複不飽和の、環状の、芳香族の、部分的に又は完全にフッ素化された炭化水素、R3が独立してH、C1〜C6の直鎖又は分枝の、飽和の、単又は複不飽和の、環状の、芳香族の、部分的に又は完全にフッ素化された炭化水素、nが1〜3、pが0〜3である少なくとも1つのオルガノシラン及び/又はオルガノシロキサン前駆体であって、前記ポロゲン前駆体とは異なる少なくとも1つのオルガノシラン及び/又はオルガノシロキサン前駆体とを含む前駆体混合物を含むガス状試薬を導入する工程;
当該ガス状試薬にプラズマによって与えられたエネルギーを加えて当該ガス状試薬の反応を誘発し、前記ポロゲン前駆体から得られるポロゲンを含む予備的な膜を提供する工程;並びに
当該予備的な膜をUV光にさらすことにより当該予備的な膜から当該ポロゲンの少なくとも一部を除去して、2.21以上でかつ2.7よりも低い誘電率を有する多孔質の有機ケイ酸塩ガラス膜を提供する除去工程
を含む、方法。 - 前記多孔質の有機ケイ酸塩ガラス膜が、式SivOwCxHyFz(式中、v+w+x+y+z=100%、vは20〜30原子%、wは20〜45原子%、xは5〜20原子%、yは15〜40原子%、zは0〜15原子%である)の化合物を含む、請求項1に記載の方法。
- 前記多孔質の有機ケイ酸塩ガラス膜中の水素の50%以上が炭素に結合している、請求項1に記載の方法。
- 前記多孔質の有機ケイ酸塩ガラス膜が1.5g/ml未満の密度を有する、請求項1に記載の方法。
- 前記多孔質の有機ケイ酸塩ガラス膜が3nm未満の等価球径を有する細孔を含む、請求項1に記載の方法。
- 前記多孔質膜が、N2中425℃等温で1.0wt%/hよりも小さい平均減量を有する、請求項1に記載の方法。
- 前記多孔質膜が、空気中425℃等温で1.0wt%/hよりも小さい平均減量を有する、請求項1に記載の方法。
- 前記少なくとも1つのオルガノシラン及び/又はオルガノシロキサン前駆体が、ジメトキシメチルシラン、ジエトキシメチルシラン、ジ−イソプロポキシメチルシラン、ジ−tert−ブトキシメチルシラン、トリメトキシシラン、トリエトキシシラン、トリ−イソプロポキシシラン、メチルトリメトキシシラン、メチルトリエトキシシラン、及びトリ−tert−ブトキシシランからなる群より選択された構成要素である、請求項1に記載の方法。
- 前記少なくとも1つのオルガノシラン及び/又はオルガノシロキサン前駆体が、2つ以下のSi−O結合を有する第1のケイ素含有前駆体と3つ以上のSi−O結合を有する第2のケイ素含有前駆体との混合物であり、当該混合物が、前記多孔質膜の化学組成に合わせて提供される、請求項1に記載の方法。
- 前記多孔質の有機ケイ酸塩ガラス膜が式SivOwCxHyFzによって表される材料からなり、式中、v+w+x+y+z=100%、vが10〜35原子%、wが10〜65原子%、xが5〜30原子%、yが10〜50原子%、zが0〜15原子%であり、当該膜が細孔及び2.6よりも低い誘電率を有する、請求項1に記載の方法によって製造される多孔質の有機ケイ酸塩ガラス膜。
- vが20〜30原子%、wが20〜45原子%、xが5〜20原子%、yが15〜40原子%、zが0である、請求項10に記載の多孔質の有機ケイ酸塩ガラス膜。
- 前記多孔質の有機ケイ酸塩ガラス膜中に含まれる水素の50%以上が炭素に結合している、請求項10に記載の多孔質の有機ケイ酸塩ガラス膜。
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TW200636090A (en) | 2006-10-16 |
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JP2010114452A (ja) | 2010-05-20 |
CN103276370A (zh) | 2013-09-04 |
JP2006100833A (ja) | 2006-04-13 |
US20060078676A1 (en) | 2006-04-13 |
US7332445B2 (en) | 2008-02-19 |
KR20060051757A (ko) | 2006-05-19 |
MY139520A (en) | 2009-10-30 |
KR100642618B1 (ko) | 2006-11-10 |
EP1666632A3 (en) | 2008-01-23 |
EP1666632A2 (en) | 2006-06-07 |
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