FR2899379B1 - Nouveaux precurseurs porogenes et couches dielectriques poreuses obtenues a partir de ceux-ci - Google Patents

Nouveaux precurseurs porogenes et couches dielectriques poreuses obtenues a partir de ceux-ci

Info

Publication number
FR2899379B1
FR2899379B1 FR0651126A FR0651126A FR2899379B1 FR 2899379 B1 FR2899379 B1 FR 2899379B1 FR 0651126 A FR0651126 A FR 0651126A FR 0651126 A FR0651126 A FR 0651126A FR 2899379 B1 FR2899379 B1 FR 2899379B1
Authority
FR
France
Prior art keywords
porogenous
precursors
novel
dielectric layers
obtained therefrom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0651126A
Other languages
English (en)
Other versions
FR2899379A1 (fr
Inventor
Joanne Deval
Manon Vautier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Original Assignee
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide SA, LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical Air Liquide SA
Priority to FR0651126A priority Critical patent/FR2899379B1/fr
Priority to EP07727138A priority patent/EP2004872A1/fr
Priority to US12/295,606 priority patent/US20090136667A1/en
Priority to PCT/EP2007/052661 priority patent/WO2007113104A1/fr
Priority to JP2009502025A priority patent/JP4960439B2/ja
Priority to TW096109824A priority patent/TW200746298A/zh
Publication of FR2899379A1 publication Critical patent/FR2899379A1/fr
Application granted granted Critical
Publication of FR2899379B1 publication Critical patent/FR2899379B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
FR0651126A 2006-03-31 2006-03-31 Nouveaux precurseurs porogenes et couches dielectriques poreuses obtenues a partir de ceux-ci Expired - Fee Related FR2899379B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0651126A FR2899379B1 (fr) 2006-03-31 2006-03-31 Nouveaux precurseurs porogenes et couches dielectriques poreuses obtenues a partir de ceux-ci
EP07727138A EP2004872A1 (fr) 2006-03-31 2007-03-20 Nouvelles composition de precurseurs formant des pores et couches dielectriques poreuses obtenues a partir de ces compositions
US12/295,606 US20090136667A1 (en) 2006-03-31 2007-03-20 Novel pore-forming precursors composition and porous dielectric layers obtained therefrom
PCT/EP2007/052661 WO2007113104A1 (fr) 2006-03-31 2007-03-20 Nouvelles composition de precurseurs formant des pores et couches dielectriques poreuses obtenues a partir de ces compositions
JP2009502025A JP4960439B2 (ja) 2006-03-31 2007-03-20 新規な孔形成前駆体組成物及びそれから得られる多孔誘電層
TW096109824A TW200746298A (en) 2006-03-31 2007-03-22 Novel pore-forming precursors composition and porous dielectric layers obtained there from

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0651126A FR2899379B1 (fr) 2006-03-31 2006-03-31 Nouveaux precurseurs porogenes et couches dielectriques poreuses obtenues a partir de ceux-ci

Publications (2)

Publication Number Publication Date
FR2899379A1 FR2899379A1 (fr) 2007-10-05
FR2899379B1 true FR2899379B1 (fr) 2008-06-06

Family

ID=37102204

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0651126A Expired - Fee Related FR2899379B1 (fr) 2006-03-31 2006-03-31 Nouveaux precurseurs porogenes et couches dielectriques poreuses obtenues a partir de ceux-ci

Country Status (1)

Country Link
FR (1) FR2899379B1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137245B (zh) * 2011-11-30 2015-09-09 群康科技(深圳)有限公司 透明导电膜及其制造方法、电子装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8753986B2 (en) 2009-12-23 2014-06-17 Air Products And Chemicals, Inc. Low k precursors providing superior integration attributes

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE230723C (fr) *
US1838456A (en) * 1929-04-15 1931-12-29 Rheinische Kampfer Fabrik Ges Process for the production of alpha cineol-containing oil mixture
US2449956A (en) * 1945-07-09 1948-09-21 Shell Dev Dialkylcyclohexyl glycols and certain derivatives thereof
US6846515B2 (en) * 2002-04-17 2005-01-25 Air Products And Chemicals, Inc. Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
US7384471B2 (en) * 2002-04-17 2008-06-10 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US8137764B2 (en) * 2003-05-29 2012-03-20 Air Products And Chemicals, Inc. Mechanical enhancer additives for low dielectric films
US7332445B2 (en) * 2004-09-28 2008-02-19 Air Products And Chemicals, Inc. Porous low dielectric constant compositions and methods for making and using same
US7727401B2 (en) * 2004-11-09 2010-06-01 Air Products And Chemicals, Inc. Selective purification of mono-terpenes for removal of oxygen containing species

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137245B (zh) * 2011-11-30 2015-09-09 群康科技(深圳)有限公司 透明导电膜及其制造方法、电子装置

Also Published As

Publication number Publication date
FR2899379A1 (fr) 2007-10-05

Similar Documents

Publication Publication Date Title
HUE036933T2 (hu) Többrétegû porózus membrán, és eljárás annak elõállítására
EP1991824A4 (fr) Couche poreuse
DE112007003796A5 (de) Poröses Silizium-Dielektrikum
EP2012898A4 (fr) Production d'alcool sec
ATE530578T1 (de) Antikörper gegen il-17a
BRPI0717636A2 (pt) Método de fabricação de membrana porosa cerâmica e método de fabricação de filtro cerâmico
BRPI0719715A2 (pt) Estrutura composta
DE602007001614D1 (de) Wabenstruktur
EP2010597A4 (fr) Structures de melanges polymeres poreux
EP2058828A4 (fr) Condensateur électrique à double couche
GB0606533D0 (en) Biodiesel production
GB0505064D0 (en) Production of bio-diesel
DE102007028867B8 (de) Aussenleiteranschluss
EP2010595A4 (fr) Structures polymériques poreuses
BRPI0717646A2 (pt) Método de fabricação de filtro cerâmico
EP1962308A4 (fr) Condensateur à double couche électrique
DE602006007184D1 (de) Ionomere Verbundmembran
DE602006019321D1 (de) Matratze
EP2004891A4 (fr) Toile destinée à la fabrication de papier monocouche
DE602007014179D1 (de) Herstellung von polytrimethylen-etherglykol
EP2099924A4 (fr) Production de biodiesel
EP2001062A4 (fr) Element a structure de membrane et son procede de fabrication
DK1826164T3 (da) Lagpresse
FR2899379B1 (fr) Nouveaux precurseurs porogenes et couches dielectriques poreuses obtenues a partir de ceux-ci
PL2108433T3 (pl) Sposób wytwarzania zaślepianej struktury podobnej do plastra miodu

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12

PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14

ST Notification of lapse

Effective date: 20201110