TW471104B - Low dielectric constant, porous film formed from regularly arrayed nanoparticles - Google Patents

Low dielectric constant, porous film formed from regularly arrayed nanoparticles Download PDF

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TW471104B
TW471104B TW89107202A TW89107202A TW471104B TW 471104 B TW471104 B TW 471104B TW 89107202 A TW89107202 A TW 89107202A TW 89107202 A TW89107202 A TW 89107202A TW 471104 B TW471104 B TW 471104B
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Mcconell Gates Steven
Christopher Bruce Murray
Shouheng Sun
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Ibm
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Abstract

The method of the invention produces a low k porous dielectric body with a uniform dielectric characteristic throughout its bulk and about its surface. The method initially starts with a mixture of a solvent, a first quantity of sacrificial nanoparticles and a second quantity of structural nanoparticles. The structural nanoparticles include an organic component. The mixture is concentrated in a manner to allow assembly of the structural nanoparticles into a lattice structure with interspersed sacrificial nanoparticles. The structural nanoparticles are then fused together to enable a rigidification of the structural nanoparticles and lattice structure. Then the sacrificial nanoparticles are removed from the lattice structure to leave voids therein. Finally, the surfaces of the voids are coated with a hydrophobic material. A device constructed in accord with the method is also described.

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471104471104

經濟部智慧財產局員工消費合作社印製 五、發明說明() 癸明領域:_ 本發明係與低介電常數膜之形成相關,其中這些膜 層上具有規律排列之陣列式奈米級粒子及散佈於其上之 孔〇 發明背景二 為增加微電予積體電路之速度,線路特徵區的尺寸 勢必需要縮小’而降低線路特徵區之尺寸就必須對線 路、金屬線及積體電路之其它元件間所使用的介電材料 加以改進β例如,對某一具阻抗R之膜線來說,其訊號 速度會隨1/RC而有不同(其中c表示線之間的電容), 只要使用低介電常數之支撐膜(即具低κ介電常數)就 能使電容值c變小,電路之速度也就因此得以增加。介 電常數介於2至3的膜層才適合用於未來之高速積體電 路中。 發明人Ayers在美國專利案5,8〇1,〇92中描述了一 種利用二氧化矽奈米級球狀抆子形成介電層的方法,其 中該二氧化梦耐米級球狀粒子為一非極性有機鐘膜圍 繞’ Ayers就使用鍍有有機膜之耐米級球狀粒子來形成 一多孔介電膜層’其中膜之孔愈多,其介電常數就愈 低,且其中二氧化矽微粒是由TEOS(當作前驅物分子) 加水分解及其凝結反應而得。Ayers使用之非極性有機 膜由氟烷基矽烷化合物组成,這種氟烷基矽烷化合物只 有一端與微米級粒子鍵結,所以具有柔性。 第3頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) —丨! I*裝- ----丨訂-------線 (請先閱讀背面之注意事項再填寫本頁) 471104 A7 B7 五、發明說明()Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Guiming field: _ The present invention is related to the formation of low dielectric constant films, where these film layers have regularly arranged array of nanometer-sized particles and Holes scattered on it. BACKGROUND OF THE INVENTION In order to increase the speed of the micro-electric pre-integrated circuit, the size of the line characteristic area must be reduced. The dielectric material used between components is improved. For example, for a film line with resistance R, the signal speed will vary with 1 / RC (where c is the capacitance between the lines), as long as a low A supporting film with a dielectric constant (that is, having a low κ dielectric constant) can make the capacitance value c smaller, and the speed of the circuit can be increased accordingly. Films with a dielectric constant between 2 and 3 are suitable for use in future high-speed integrated circuits. The inventor Ayers described a method for forming a dielectric layer using nanometer-sized spherical silica made of silicon dioxide in U.S. Patent No. 5,8,092, wherein the dream-resistant nanometer-sized spherical particles are Non-polar organic bell film surrounds 'Ayers uses rice-resistant spherical particles coated with organic film to form a porous dielectric film layer'. The more pores in the film, the lower the dielectric constant, and the dioxide Silicon particles are obtained by TEOS (as a precursor molecule) hydrolyzed and its condensation reaction. The non-polar organic membrane used by Ayers is composed of a fluoroalkyl silane compound. This fluoroalkyl silane compound has only one end bonded to micron-sized particles, so it is flexible. Page 3 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) — 丨! I * pack ----- 丨 Order ------- line (Please read the precautions on the back before filling this page) 471104 A7 B7 V. Description of the invention ()

Ayers所使用之奈米級球狀粒子至少包含二氧化 矽,而二氧化矽具有相當高的介電常數,其值约為4,且 這種二氧化矽核心材料會限制多孔性膜之介電常數的降 低。此外’ Ayers所用的.有機膜只在一位置上和奈米級球 狀粒子連結且本質為軟性,所以在介電膜形成時軟性有 機化合物會壓縮,而奈米級球狀粒子之間的空隙就減小 了。如此形成之膜結構的多孔性僅稍稍增加,而膜之介 電常數也同時升高。The nano-sized spherical particles used by Ayers contain at least silicon dioxide, and silicon dioxide has a relatively high dielectric constant with a value of about 4, and this silicon dioxide core material will limit the dielectric properties of porous membranes. Decrease of constant. In addition, used by Ayers. The organic film is only connected to nano-sized spherical particles at one position and is soft in nature, so the soft organic compound will be compressed when the dielectric film is formed, and the gap between the nano-sized spherical particles It is reduced. The porosity of the film structure thus formed is only slightly increased, and the dielectric constant of the film is also increased at the same time.

Kapoor et al·在美國專利案 5,598,026 及 5,470,801 中描述了一種製造半導體材料之一低介電多孔隔離膜的 方法。該多孔性膜係由對一絕緣材料及一第二可抽出材 料之·混合物進行化學氣相沉積而得,當可抽出材料被移 除時’低介電絕緣材料之多孔結構便因此而得。不過, Kapoor et al·卻不能保證在可抽出材移除時所形成之洞 間的間隔及其大小的規律性,且其所用方法形成之洞非 常大或非常小,其中大洞大小和微影特徵區大小相近, 所以這種結果是不能接受的’因為如此—被蝕刻之洞或 溝渠就會與一大洞相截。當這些大洞在線路製造時會被 填以金屬,而相鄭之金屬線間就會形成短路路徑或高電 容,亦即形成線路不良。 在上述之各習知技術參考案中’多孔性膜都包本不 規-則分佈的洞,這些洞使得介電膜中的介電特性隨^之 位置而不同。此外,這些習知膜層的洞 . /U大小有很大的差 異’很明顯這樣的膜特性不適於使复處 /、應用在積體電路 --------------裝--- (請先閱讀背面之注音?事項再填寫本頁) _ -*線· 經濟部智慧財產局員工消費合作社印製 471104 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 中。 所以本發明之一目的就在提供一具低k值的介電 膜’其整個表面及厚度上的介電特性大致為一定的。 本發明之另一目的在於提供一 k值約在2至3之間 的介電膜。 發明目的及概述: 本發明之方法在於製造一具低k值的多孔性介電體, 且該介電體在其塊材中及其表面處的介電特性都很均 勻。該方法首先將一溶劑、一第一量之奉獻奈米級粒子及 一第二量之結構奈米級粒子製備成混合物,其中該結構奈 米級粒子包含一有機成份’而該混合物被加以濃縮,以讓 結構奈米級粒子組成晶格結構’且該晶袼結構中有奉獻奈 米級粒子散佈其中。隨後該結構奈米級粒子被融化在一 起,以硬化該結構奈米級粒子及晶格結構。接著,奉獻奈 米級粒子就從晶格結構中移出而空出洞於其中。最後,洞 之表面被加以忌水性材料。 圖式簡單說明: 第1圖為本發明之方法的流程圖; 第2a-2c圖說明本發明之方法的三個階段中奈米級粒子Kapoor et al. In U.S. Patent Nos. 5,598,026 and 5,470,801 describe a method for manufacturing a low-dielectric porous separator, one of semiconductor materials. The porous membrane is obtained by chemical vapor deposition of a mixture of an insulating material and a second extractable material. When the extractable material is removed, the porous structure of the low dielectric insulating material is obtained. However, Kapoor et al. Cannot guarantee the regularity of the interval and the size of the holes formed when the extractable material is removed, and the holes formed by the method used are very large or very small, including the size of large holes and lithographic features. The area is similar in size, so this result is unacceptable 'because of this-the etched hole or trench will intercept a large hole. When these large holes are filled with metal when the line is manufactured, a short-circuit path or a high capacitance will be formed between the metal wires of the phase, which means that the line is defective. In each of the above-mentioned conventional technical references, the 'porous membranes contain irregularly-distributed holes, and these holes make the dielectric characteristics in the dielectric film different depending on the position. In addition, the holes of these conventional film layers. / U size is very different. 'It is obvious that such film characteristics are not suitable for complex processing / application in integrated circuits ------------- -Install --- (Please read the phonetic on the back? Matters and then fill out this page) _-* Line · Printed by the Consumers 'Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 471104 Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (). Therefore, it is an object of the present invention to provide a dielectric film with a low k value. The dielectric characteristics over the entire surface and thickness are substantially constant. Another object of the present invention is to provide a dielectric film having a k value of about 2 to 3. OBJECTS AND SUMMARY OF THE INVENTION: The method of the present invention is to produce a porous dielectric body with a low k value, and the dielectric properties of the dielectric body in its bulk material and at its surface are uniform. The method first prepares a solvent, a first amount of dedicated nano-sized particles and a second amount of structured nano-sized particles into a mixture, wherein the structured nano-sized particles contain an organic component and the mixture is concentrated To make structural nanometer-sized particles compose a lattice structure ', and there are dedicated nanometer-sized particles dispersed in the crystal structure. The structured nanoscale particles are then melted together to harden the structured nanoscale particles and the lattice structure. Then, the dedicating nanometer-sized particles are removed from the lattice structure and vacated in them. Finally, the surface of the hole is coated with water-repellent material. Brief description of the drawings: Figure 1 is a flow chart of the method of the present invention; Figures 2a-2c illustrate the nano-scale particles in the three stages of the method of the present invention

------I---------------^---------^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 471104 A7 _B7_ 五、發明說明() 圖號對照說明: 11 六角晶體 12 二維膜層 13 奉獻粒子 發明詳細說明: 本發明利用奉獻奈米級粒子及結構奈米級粒子來形 成一低k值的介電膜。在本發明中.很重要的特點是結構奈 米級粒子及奉獻奈米級粒子的直徑都可加以選定,且它們 的大小大致上是均勻的。由於這些奈米級粒子的大小大致 上是均勻的,所以其在製造時具有使粒子本身排列成規律 之晶袼結構的特性,這使得奉獻奈米級粒子在晶格結構中 能以一規律且週期性的間隔方式排列。之後,在奉獻奈米 級粒子被移除之後,洞在最後形成之層膜中就以規律週期 性之方式排列。是以,經由對奉獻> 米級粒子大小的選 定,所形成之層膜的多孔性就能加以調整,以符合膜層所 需要之k值。 一種能提供這種奉獻奈米級粒子的較佳材:料由鍺及 氧構成(即二氧化鍺),而樹乳、蕃、蒽、及其相關的有機 化合物與分子結晶體則是次佳的選擇。另一方面,較佳的 結構奈米級粒子材料為有機硬’其分子式為Sia〇bCeHd’ 其>莫耳分數a約為0.05至0.5,並以約0.01至0.4為佳, 而以約0.15至0.25為更佳;莫耳分數b約為0·05至0.5’ 並以約為0 · 1至0.4為佳,而以約0.2至0 _ 3 5為更佳;莫 第6頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -------I--------^---------^ (請先閱讀背面之注意事項再填寫本頁) 五、發明說明( 耳分數㈣约為。,05至0.5為 而以約〇·15至〇·4為更佳·莫耳/、,々〇·10至〇·5為佳, 以約。·…為佳,而以::ΓΓ:约為。至。·5,並 結構奈米級材科(因其介電常數較高)包次佳的 化硬及氮化梦,其能形成晶格結構。匕…乳化砂、氧磷 結構粒子以製成奈米級大 機麥燒、有機♦氧燒m w = :是利用有 子的熱分解。 矽坑或齒矽烷前驅物質分 前述之結構粒子較習知介電粒昱之 機咬的組成,因為各#早的入〇 u處在於其有 為w碳粒子的介電常數(k約為2至3)在理 論上較習用之氧化矽粒子為低。 .結構奈米級粒子以鍍上有機化合物為佳…較佳有機 化合物應(1)使粒子具有忌水性,以抵抗水氣;⑺含有— 忌水性位置,且該位置能與該粒子互相鍵結;(3)降^粒子 的整體介電常數,及(4)使粒子可溶於有機溶液中。這種較 佳有機化合物的例子可如烷基矽烷或碎自烷化合物,如 XsSiR,其中X為烷氧基或鹵素,其中烷氧基的碳在分子 式中約為1個至4個,而R為規基,其碳在分子式中約為 8個至3 0個。 如以上所指出的,依據本發明所形成之介電膜結構的 特點在於膜中之孔大小大致均等’這些孔大小為奉獻奈米 級”粒子及之直徑(DA)所控制,而孔的排料模式為規律且為 可預測之樣式。經由兩種粒子成份(每一者都具有可控制 之大小及組成)的使用,具有規律間隔且大小相等之孔的 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 471104 A7 B7 經濟部智慧財產局員Η消費合作社印製 五、發明說明( 固態膜就得以形成。 製造方法說明 關於本發明之膜製造的一較佳實施例,吾人可逕行參 閱第1圖所示之流程圖,本發明之奈米級粒子的備製方法 就與該製造方法·說明者相同。 該方法(步騾1)首先提供由二氧化鍺形成之奉獻奈米 級粒子溶液,其中這西粒子的直徑為DA,且"奈米級粒子 "指的是直徑1至10nm的粒子,旦以i至3nm為佳。這些 奈米級粒子之形狀大約是球狀,且其特徵在於粒子大小的 分佈區域窄(即粒子在本質上是大小均勻,且大小差里的 標準差小於10%)。該方法更進一步利用結構粒子溶液, 其至少包含矽、碳、氧及氫(氫為可選擇者),這些粒子大 致呈球狀,其特徵在於粒子大小的分佈區域有,且粒子之 直徑為"DB”。 這些奈米級粒子的合成及溶液之相態處理將描述如 後。 ^ 在該較佳實施例中’ DB/DA大約為0 75 5 Λ . 王ϋ.8 ’而所 使用之奈米級粒子係選定在一特定之比例,卽 1外1個二氧化 鍺與5個碳氧化矽的比例。DB/DA為0.65至〇 Q θ ,y疋—種較 不佳的直徑比。二氧化鍺粒子(DA)較大,且其為數較心 —在步驟2中,二氧化鍺粒子溶液及碳氧化 =^。 7 fe予落液 被加以混合,以形成隨機之混合物,其中丨 、 找 〜氣化錯粒 子與5個竣氧化矽粒子的比例依然被維持住。〜 镑箐,混合 _ 第8頁 ^紙張尺度適用中國國家標準(CNS)A4規格(21Q X 297公爱) ^ -------11 ^ —-------^ (請先閱讀背面之注意事項再填寫本頁) 4711〇4------ I --------------- ^ --------- ^ (Please read the notes on the back before filling this page) Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau ’s Consumer Cooperatives 471104 A7 _B7_ V. Description of the invention () Drawing number comparison description: 11 Hexagonal crystals 12 Two-dimensional film layer 13 Dedicated particles Detailed description of the invention: The present invention uses dedicated nano-sized particles and structured nano-sized particles to A low-k dielectric film is formed. In the present invention, a very important feature is that both the diameter of the structured nanometer-sized particles and the dedicated nanometer-sized particles can be selected, and their sizes are substantially uniform. Because these nano-sized particles are approximately uniform in size, they have the property of arranging the particles themselves into a regular crystalline structure during manufacture. This enables the dedication of nano-sized particles to be regular and consistent in the lattice structure. Arranged periodically. Later, after the dedication nanometer-sized particles were removed, the holes were arranged in a regular periodic pattern in the final formed film. Therefore, the porosity of the formed film can be adjusted by selecting the size of the dedication > meter-level particles to meet the required k value of the film. A better material that can provide this kind of dedicated nano-sized particles: the material is composed of germanium and oxygen (that is, germanium dioxide), while tree milk, Fan, anthracene, and related organic compounds and molecular crystals are the second best select. On the other hand, the preferred structural nano-scale particle material is organic hard, its molecular formula is SiaObCeHd ', and its Mohr fraction a is about 0.05 to 0.5, preferably about 0.01 to 0.4, and about 0.15. More preferably to 0.25; Mohr fraction b is about 0.05 to 0.5 'and preferably about 0.1 to 0.4, and more preferably about 0.2 to 0 _ 3 5; Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) ------- I -------- ^ --------- ^ (Please read the note on the back first Please fill in this page again.) 5. Description of the invention (ear score is about .05 to 0.5, and about 0.15 to 0.4 is better. Moore /, and 々.10 to 0.5 is It is better to use about ....., and :: ΓΓ: about. To. · 5, and the structure of nano-grade materials (because of its high dielectric constant) includes the second best hardening and nitriding dreams. , It can form a lattice structure. Dagger ... Emulsified sand, oxygen-phosphorus structure particles to make nano-scale large-scale wheat burn, organic ♦ Oxy-fired mw =: is the use of thermal decomposition of ions. Silicon pit or tooth silane precursor substance The composition of the aforementioned structural particles is more familiar than the composition of the dielectric particles. # 早 入 〇u lies in the fact that the dielectric constant (k is about 2 to 3) of w carbon particles is theoretically lower than that of conventional silicon oxide particles.. Structure nano-sized particles are coated with organic compounds as Good ... preferable organic compounds should (1) make the particles water-repellent to resist water vapor; ⑺ contains-water-repellent positions, and the positions can be bonded to the particles; (3) reduce the overall dielectric constant of the particles , And (4) make the particles soluble in organic solutions. Examples of such preferred organic compounds may be alkylsilanes or alkane compounds such as XsSiR, where X is an alkoxy group or a halogen, wherein the alkoxy group Carbon is about 1 to 4 in the molecular formula, and R is a gauge group, and its carbon is about 8 to 30 in the molecular formula. As noted above, the characteristics of the structure of the dielectric film formed according to the present invention The size of the pores in the film is approximately equal. These pore sizes are controlled by the dedicated nano-sized particles and their diameter (DA), and the pores are arranged in a regular and predictable pattern. Both have controllable size and composition) use, with regularity The size of this paper with the same size of holes is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 471104 A7 B7 Printed by a member of the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 5. Description of the invention (a solid film was formed. Manufacturing method description A preferred embodiment of the film manufacturing of the present invention, we can refer directly to the flowchart shown in Figure 1, the preparation method of the nano-level particles of the present invention is the same as the manufacturing method and the description. This method (step 1) first provides a solution of dedicated nano-sized particles formed of germanium dioxide, where the diameter of the western particles is DA, and " nano-sized particles " refers to particles with a diameter of 1 to 10 nm, Denier is preferably from 3 to 3 nm. The shape of these nano-sized particles is approximately spherical, and is characterized by a narrow distribution of particle sizes (that is, the particles are essentially uniform in size and the standard deviation within the size difference is less than 10%). This method further utilizes a structured particle solution, which contains at least silicon, carbon, oxygen, and hydrogen (hydrogen is optional). These particles are roughly spherical, and are characterized by the distribution of particle size and the diameter of the particles is & quot "DB". The synthesis of these nanoscale particles and the phase treatment of the solution will be described later. ^ In the preferred embodiment, 'DB / DA is approximately 0 75 5 Λ. Nano-scale particles are selected at a specific ratio, the ratio of 1 germanium dioxide to 5 silicon oxycarbons outside 卽 1. DB / DA is 0.65 to 0 θ, y 疋-a kind of poor diameter ratio. The germanium dioxide particles (DA) are larger, and they are more heart-warming-in step 2, the solution of germanium dioxide particles and carbon oxidation = ^. 7 fe predescent liquid is mixed to form a random mixture, where 丨, find ~ The ratio of gasification fault particles to 5 finished silica particles is still maintained. ~ Pound 箐, mixed _ page 8 ^ Paper size applies Chinese National Standard (CNS) A4 (21Q X 297 public love) ^- ----- 11 ^ —------- ^ (Please read the notes on the back before filling out this page) 47 11〇4

物經由溶液的蒸發而被 、而在一揮發性溶劑中形成 π 一 /分別,| 7 /叫 -又向散開之膠體’其中該溶劑黏綱度之選定以能方便步 驟3之使用為原則。此時’該方法中奈米級粒子的排列方 式如第2a圖所示。 在步驟3中,雙向教開的膠體溶液以_適當之方法鍵 於一基材之上’例如可用旋轉鍍膜法、滴定鍍膜法或喷灑 鍍膜法。m溶劑接著就以蒸發而從鍍膜中緩慢移出,這個 動作可選擇性在約為6〇t之真空焯中+忐自a 丄 丹二I甲疋成。取後所形成的 膜層為由二氧化鍺及碳氧化矽粒子整齊排列形成之固態 化合物,其中二氧化鍺及碳氧化矽粒子的比例為丨:5。至 此,該方法中奈米級粒子的排列方式如第2b圖所示。 值得注意的是二氧化鍺粒子大約是碳氧化矽粒子的 1,25倍,而二氧化鍺粒子大致分佈在碳氧化矽粒子組體之 規律晶格位置上’且所形成的膜層為具有CaCu5晶格結構 的奈米級粒子超晶格結構。當了解的是,以本發明之方法 所形成之膜的所有區域中,孔排列及礼間隔不需要是全然 完美的’只要這種排列方式存在於膜中相當大之部份内即 可。 所形成的膜層為第3圖所示之具有CaCu3-晶格結構的 奈米級粒子超晶格結構,其中結構粒子之直徑為〇,其以 黑色圈圈表TF ’而奉獻粒子則以開口圈圏表示之。結構粒 子”以連接之六角晶體11形狀排列,並形成無限之二維膜 層1 2 ;奉獻粒子1 3則佔據在每隔兩層之六角晶體的中心 位置。所形成結構的70至75%之空間在蝕刻前為無機幸 第9頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -ft I I IV- I I I I I I 1 I 1 I I (請先閱讀背面之注意事項再填寫本頁) 訂* · 經濟部智慧財產局員工消費合作社印製 471104 A8 B8 C8 D8 申請專利範圍 料所填充,而在二氧化鍺成份被移除之後,該填充之比例 則降為約55%。 在步驟4中,碳氧化矽粒子因熱或輻射的加入而交 鍵’而交鍵的形成則是因為選擇一具雙功能特性的表面穩 定劑所致。當紫外線或其它源造成交鍵時,分子之一端會 以很大的程度與表面奈米級粒子(如對碳氧化梦及二氧化 鍺粒子而言,矽氧或氯矽烷功能會互相結合)相調協,而 分子的末端則會有化學半部份(chemical moieties),這些化 學半部azx份會彼此鍵結在一塊。一較佳之分子例子的結 構為X3SiR(以上描述者)’其中R為一(。仏)^鏈,且η為 1至20,而R的終端為丙烯酸鹽群: ΟThe substance is evaporated by the solution to form π- / respectively in a volatile solvent, | 7 / called-again to the dispersed colloid ', wherein the viscosity of the solvent is selected to facilitate the use of step 3. At this time, the arrangement of nano-scale particles in this method is shown in Fig. 2a. In step 3, the colloidal solution taught in both directions is bonded to a substrate by an appropriate method ', such as a spin coating method, a titration coating method, or a spray coating method. The m solvent is then slowly removed from the coating by evaporation. This action can be selectively performed in a vacuum of about 60 t + + from a 丹 dandi I formaldehyde. The formed film layer is a solid compound formed by the regular arrangement of germanium dioxide and silicon oxycarbide particles. The ratio of germanium dioxide and silicon oxycarbide particles is 5: 5. So far, the arrangement of nanoscale particles in this method is shown in Figure 2b. It is worth noting that germanium dioxide particles are approximately 1,25 times larger than silicon carbide particles, and the germanium dioxide particles are roughly distributed on the regular lattice position of the silicon carbide particles, and the formed film layer has CaCu5 Lattice structure of nano-scale particles superlattice structure. It is understood that the hole arrangement and ceremonial spacing need not be perfectly perfect in all areas of the film formed by the method of the present invention, as long as this arrangement exists in a substantial portion of the film. The formed film layer is a nano-scale particle superlattice structure with CaCu3-lattice structure as shown in FIG. 3, where the diameter of the structural particles is 0, which is represented by the black circle TF 'and the dedication particles are opened. The circle 圏 indicates it. The "structure particles" are arranged in the shape of connected hexagonal crystals 11 and form an infinite two-dimensional film layer 12; the dedicated particles 13 occupy the center position of every other two-layered hexagonal crystals. 70 to 75% of the structure formed The space is inorganic before etching. Page 9 This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) -ft II IV- IIIIII 1 I 1 II (Please read the precautions on the back before filling in this *) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs's Consumer Cooperatives printed 471104 A8 B8 C8 D8 patent application materials are filled, and after the germanium dioxide component is removed, the filling ratio is reduced to about 55%. In step 4, the silicon oxycarbide particles are cross-bonded due to the addition of heat or radiation, and the formation of the cross-bond is due to the selection of a dual-functional surface stabilizer. When ultraviolet or other sources cause cross-linking, One end will coordinate to a large extent with surface nano-sized particles (for example, for carbon oxide dreams and germanium dioxide particles, siloxy or chlorosilane functions will combine with each other), and the end of the molecule will have chemical Half chemical moieties), these chemical halves azx will be bonded to each other. A preferred example of the structure of the molecule is X3SiR (described above) 'where R is a (. 仏) ^ chain, and η is 1 to 20, The terminal of R is the acrylate group: 〇

A —0 — C — CH=»CH2 〇 不同的做法是,以終端為-COOH之R鏈及-NH2群兩 者形成的混合物來形成氨基化合物鏈結。 在步騾5中,基材被置於水中,而二氧化鍺粒子則以 溶化成鹼性水溶液的方式加以移除,而超音波檀摔、機械 式攪動及溫和加熱的方式可選擇性加以使用,以加速二氧 化鍺粒子溶入水溶液中。在二氧化鍺溶化之後,洞(孔)就 因此形成。這時,本方法形成之結構粒子的排列方式如第 2c圖所示。 在孔中的水因多孔體浸在丙酮中而缓慢與中間溶劑 交換,該多孔體接著被置入一壓力控制室中,該室則連接 有二氧化碳氣源’且多孔體樣品之溫度維在3 1 °C以下,此 第10頁 表纸張尺度適用中國國家標準(CNS ) A4規格(210X297公羡) (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 471104 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明( 時罜内二氧化碳壓力漸升高,並漸高至1〇72psi〈约十分鐘 的時間)。當室内壓力為1072psi、且温度增至3rc時,二 氧化碳就從一高壓氣體轉而成為超關鍵性的流體,二氧化 複流體於是將丙酮隨殘餘的水從孔中溶解出來。接著,室 内溫度被維持在約3 5 °C,即僅微微高出臨界溫度,而壓力 則緩te下降’這使得超關鍵性流體密度下降,並使二氧化 碳緩慢回到氣體狀態。在這個動作循環中,溶劑(丙酮及 殘餘水)從内部中移出時不會使多孔結構承受大表面張 力’其中這種衣面張力係因溶劑利用受熱或真空移除所產 生。以此觀點來說,剩餘的結構粒子就形成一鬆散之立方 體晶格結構,並因交鍵有機分子的存在而維持在這種鬆散 排列之晶格結構。 接下來,該多孔固體就被曝至潤濕之空氣中,這會使 得水重新被吸收在内表面上’所以曝至潤濕空氣之程度應 減至最小,直至所有的内表面都變得忌水為止(見步驟 6)。 在步驟6中,粒子表面上所吸收的殘餘水量被加以移 除,而洞之内表面則使之成為忌水性。基材被置放在約1 5〇 °C的真空爐中’該爐被抽空,且該多孔體樣本就處在1 5〇 °C環境下約1 0分鐘的時間。該爐接著被加以六〒基二梦 氮烷(hexamethyldisilazane)或六苯基二矽氮烷(hexaphenyl -disilazane),其中這兩種物質集流於一惰性氣體(氮或氬) 當中,且基材仍被維持在150。(:。20分鐘之後,該爐被冷 卻至室溫並被加以抽空,其間則維持約1 〇分鐘之久。在 第買 私紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) ----------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) A7A —0 — C — CH = »CH2 〇 The different method is to form an amino compound chain by using a mixture of the R chain terminated by -COOH and the -NH2 group. In step 5, the substrate is placed in water, and the germanium dioxide particles are removed by dissolving into an alkaline aqueous solution. Ultrasonic sanding, mechanical agitation, and gentle heating can be selectively used. To accelerate the dissolution of germanium dioxide particles into the aqueous solution. After the germanium dioxide is dissolved, holes (holes) are formed. At this time, the arrangement of the structure particles formed by this method is shown in Fig. 2c. The water in the pores was slowly exchanged with the intermediate solvent because the porous body was immersed in acetone. The porous body was then placed in a pressure control chamber, which was connected to a carbon dioxide gas source, and the temperature of the porous body sample was 3 Below 1 ° C, the paper size on this page 10 applies Chinese National Standard (CNS) A4 specification (210X297) (please read the precautions on the back before filling this page). 471104 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7. 5. Description of the invention (the pressure of carbon dioxide in the air gradually increased, and gradually increased to 1072 psi (about ten minutes). When the chamber pressure is 1072 psi and the temperature is increased to 3rc, carbon dioxide turns from a high-pressure gas into a supercritical fluid, and the secondary fluid dissolves acetone with the residual water from the pores. Then, the temperature in the room is maintained at about 35 ° C, which is only slightly higher than the critical temperature, and the pressure decreases slowly. This reduces the density of the supercritical fluid and slowly returns the carbon dioxide to the gas state. In this cycle of action, the solvent (acetone and residual water) is removed from the interior without subjecting the porous structure to large surface tension ’, where this surface tension is caused by the solvent being removed by heat or vacuum. From this point of view, the remaining structural particles form a loose cubic lattice structure and are maintained in this loosely arranged lattice structure due to the presence of cross-linked organic molecules. Next, the porous solid is exposed to the humidified air, which will cause water to be absorbed again on the inner surface ', so the degree of exposure to the humidified air should be minimized until all the inner surfaces become water-resistant. (See step 6). In step 6, the amount of residual water absorbed on the surface of the particle is removed, and the inner surface of the hole makes it water-repellent. The substrate was placed in a vacuum furnace at about 150 ° C. The furnace was evacuated, and the porous body sample was left at 150 ° C for about 10 minutes. The furnace is then charged with hexamethyldisilazane or hexaphenyl-disilazane, where the two substances are collected in an inert gas (nitrogen or argon) and the substrate Still maintained at 150. (:. After 20 minutes, the furnace was cooled to room temperature and evacuated, during which it lasted for about 10 minutes. The Chinese national standard (CNS) A4 specification (210 X 297) ) ---------- install -------- order --------- line (please read the precautions on the back before filling this page) A7

471104 五、發明說明() 這過程中’内部孔被鍍以忌水膜,以使多孔體不會吸收水 氣,並使其本身性質變成情性。隨後,該爐被加以一純惰 性氣體’並將基材移出。 最後形成 < 膜結構為一碳氧化矽奈米級粒子排列成 之超晶格結構,且在該晶袼結構中佈有孔(洞),這些孔並 以如CaCus 0曰格結構之孔的規律週期性間隔排列。這種膜 結構可被視為碳氧化矽粒子形成的間層堆疊結構,其中碳 氧化矽粒子忒以連結之六角晶形方式排列,且在每一六角 晶形之中央部份都有一洞。 第二實施例 在本發明的第二實施例中,較大的少數奈米級粒子為 奈、恩或一種相關之分子晶體’其直徑為DA。接著,在 該方法的步驟5中,一碳氫溶劑(任何的脂肪族或芳香族 燒煙’如戊烷、己烷或甲苯)可用來溶解分子晶體粒子, 以留下碳氧化矽粒子結構。 這與第一實施例不同的優點在於步驟5及步驟6可以 合而為單一步騾,該HMDS或HPDS被溶解在碳氫溶劑 中’包含HMDS(或HPDS)的溶劑被用來溶解較大之少數奈 米級粒子,且在100_150°c之温度下進行為佳,HMDS (或 HPDS)並同時與碳氧化梦奈米級粒子表面進行反應: •夕.户餐 第三實施例 在本發明的第三實施例中,較大之少數奈米級粒子直 第12頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) I I I I I 裝----一— II 訂-- ------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 471104 A7 B7471104 V. Description of the invention () In this process, the internal pores are plated with a water-repellent film, so that the porous body will not absorb water vapor, and its nature will become emotional. Subsequently, the furnace is supplied with a pure inert gas' and the substrate is removed. Finally, the formation of the membrane structure is a superlattice structure composed of nanometer-sized particles of silicon oxycarbide, and holes (holes) are arranged in the crystal structure. These holes are formed by holes such as CaCus 0 lattice structure. Regularly arranged at regular intervals. This membrane structure can be regarded as an interlayer stack structure formed by silicon oxycarbide particles, in which the silicon oxycarbide particles are arranged in a connected hexagonal crystal form, and there is a hole in the central part of each hexagonal crystal form. Second Embodiment In the second embodiment of the present invention, the larger number of nanoscale particles are nano, en, or a related molecular crystal ', and its diameter is DA. Next, in step 5 of the method, a hydrocarbon solvent (any aliphatic or aromatic soot ' such as pentane, hexane, or toluene) can be used to dissolve the molecular crystal particles to leave the silicon oxycarbide particle structure. This is different from the first embodiment in that steps 5 and 6 can be combined into a single step. The HMDS or HPDS is dissolved in a hydrocarbon solvent. The solvent containing HMDS (or HPDS) is used to dissolve larger solvents. A few nano-sized particles, and it is better to perform at a temperature of 100-150 ° c, HMDS (or HPDS) and at the same time react with carbon oxidation of the surface of dream nano-sized particles: • Evening. The third embodiment of the household meal in the present invention In the third embodiment, a relatively large number of nano-sized particles are straight. Page 12 This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). IIIII Packing-I-II Order-- ----- line (Please read the precautions on the back before filling this page) Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 471104 A7 B7

PAA PMMA PGMMA PTBA PS PolyNIPAM 五、發明說明() 徑為DA,且其以合成樹乳(聚(丁基餅婦酸鹽))或PBMA組 成為佳,其它可用之材料則如下述: 聚(丙晞酸) 聚(曱基餅缔酸@旨) 聚(甲基甲丙埽縮水甘油酯) 聚(t- 丁基餅埽酸盤) 聚(苯乙婦) 聚(η-異丙基·《丙婦酸胺) 奉獻奈米級粒子係以氧對其氧化而為移除(而非溶 解)’其第一優點為部份奉獻粒子容易購買(即市面上容易 取得)’·其第二優點為這種移除方式在進行步騾5及6時 只需要一個反應室。該反應室被抽空,之後再填以活性氧 (即氧分子及遠端氧電漿提供之氧原子的混合物與紫外線 產生之臭氧之任一者),基材溫度則維持在2〇〇°c _3 50°c, 運種操作條件必須連續維持至較大之少數奈米級粒子轉 ’菱成一氧化後及其它氧化產物’其中調整氧化狀態時必須 王意不能讓碳或石墨沉積殘餘物留在無機奈米級粒子的 表面之上,因為如此可能會使所形成之膜的介電常數變 大。 第’四實施例 多數的結構粒子可由二氧化矽組成,而較大之少數粒 子(奉獻粒子)則是由下列物質之一所組成〔二氧化錯、分 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐 I.------------幕--------if---------線 C請先03·讀背面之漆意事頊存填寫本買) 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 經濟部智慧財產局員工消費合作社印製 471104 五、發明說明( 子晶體(蓁等)或樹乳,i古"^ 前述之方^ 為DA。奉獻粒子梢後則利用 刖迷 < 万法加以移除。 第五實施例 第五實施例和前述數實㈣不同者在 奈米級粒子或另一適 其使用樹扎 社構r子,h '用^機奈木級粒子來當作多數之 結稱粒于,並以下而丨札陆、& -望化… 者當作少數之奉獻粒子: 一-辛的太:化矽、二氧化矽或一分子晶體(如蕃)。這種 二'素的Τ、米級粒子結構在步驟1至步驟3中形成,這此 粒子隨後並被進行鍵交。之後,奉獻粒子以適當之… 落解化學物質加以移除,其中二氧化鍺粒子以驗性水溶液 加以刻,氮詩及二氧化㈣子制用氫氟酸來敍刻, 而分子晶體的奈米級粒子(如請利用在曱苯中稀釋而加 以移除,其中甲苯會膨脹但不會溶解樹乳粒子網。 第六實施例 在此不同實施例中,奉獻粒子之直徑為DA,而結構 粒子之直徑為DB ’其相互關係為DB/DA = 〇 6±· 〇5。這此 粒子在步驟1中進行混合,該混合比例為1 3個較小之奉 獻粒子與1個較大之結構粒子之比。在步驟4結束時,所 形成之膜結構如弟4圖所示,該結構以較大之結構粒子所 IT成’且這些粒子是以一簡單立方晶格結構形式排列。在 每一立方單元胞中則是成集之較小奉獻粒子1 3。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 裝--------訂---------線 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 471104 A7 B7_____ 五、發明說明() 結構奈米級粒子之製造方々 結構奈米級粒子材料是以熱散合成方法製備而成,該 σ成方法首先是預先對一高沸點溶劑加熱至約2 〇 〇 _ 4 〇 〇 C,其中任何適用之惰性物質高沸點溶劑都可使用之。芳 香族酸及具取代芳香族醚之材料是較佳的溶劑來源,其中 後者的較佳模式為R7〜ph-〇-ph-R8,其中Ph是苯基’而R7 及R可以是相同或不同的,且其是選自苯基,並約是Ci 至Cs的就基。其它適用之溶劑例子為芳香族醚、具取代芳 香族趟之材料、高沸點之未飽和碳氫化合物(如異三十烷 或 2,6,1 0,1 5,1 9,23 六甲基四(二十燒)(hexame thy 卜 tetracosane)、及全氟烯屬烴(如全氟煤油)。較佳之溶劑 為溫度在約2 5 0 °C的苯基醚,將穩定之配合基體加入溶劑 當中則為更佳的做法,其中配合基體的加入在以下將有論 述° 有基矽氧烷、有機矽烷、矽氧烷、矽烷及/或囊矽烷 前驅化合物被置於一注射器中,並被快速注入該預先加熱 之溶劑中,這時前驅化合物會快速熱分解,而小非晶含矽 粒子會發生成核現象。對該溶劑繼續加熱約3 〇分鐘,粒 子就得以成長,此時粒子之大小約為5nm。另外,加熱之 時間也可以增長或縮短,以分別應用在較大及較小粒子的 成長上。 較佳之鹵矽烷前驅化合物的結構為R4Si Y3 ’其中R4 大約為Ci至Cs的燒基,而γ為鹵素,且以氯為佳。 能被應用在本發明之一較佳矽氧烷化合物為氫-倍半 第15頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ---I I I I 1 I I I 1 * , I 1 I I 丨 I I ·1 丨—丨 — — 丨_ (請先閱讀背面之注意事項再填寫本頁) 471104 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明() 碎氧燒(hydro-silsesquioxane),其一般結構為 HnSin〇3/2n,其中 n 約為 J 至 。 在一較隹實施例中,前驅化合物為有機矽氧烷前驅化 合物。在本發明中’有機矽氧烷化合物是直的、分叉的或 具循每結構的化合物,其至少包含矽、氧及碳,較佳之有 機碎氧燒化合物為倍半矽氧烷(sisesqui〇xanes)及環基 矽氧烷。 所舉的倍半矽氧烷例子為不完整凝結及完整凝結之 倍半♦氧燒’其中不完整者的分子式為 (fTSi〇3M)n(H2〇)3n/2 ’其中Rs大約為^至Cs的烷基,而^ 約為1至10。此外,不完整之凝結倍半矽氧烷是在 R3Si (0Η)3被加熱且水已被去除之時形成。 完整之凝結倍半矽氧烷是對部份凝結之倍半矽氧烷 中的水去除之後形成的。目前市面上可購得之完整凝結倍 +梦氧燒中’ η為6, 8及1〇者可應用在本發明中。 環基碎氧燒也可當作本發明之前驅化合物,較佳之環 基梦氧燒的分子式為R3nHn(Si〇)nl Rs2n(Si〇)n,其中R5 约為C!至Cs的烷基’而^約為1至i〇。 另一較佳之有基矽氧烷的分子式為 CH30(SiO (CH30)2)n ’其中n約為1至1〇。 更佳之有機矽氧烷及有機矽烷化合物為TE0S、TMS、 TMXTS、TECTS、環基四矽氧烷、環基五矽氧烷、五甲基五 硬氧燒及以上數者構成之混合物。 以上這些化合物被用來形成本發明所需要之較佳有 第16頁 本紙張尺度適用中國國家標準(CNS)A4 ϋ210 χ 297公爱)PAA PMMA PGMMA PTBA PS PolyNIPAM V. Description of the invention () The diameter is DA, and it is preferably composed of synthetic tree milk (poly (butyl bisporate)) or PBMA. Other available materials are as follows: poly (propylene Pyranoic acid) Poly (Methyl-based cake associative acid @ Purpose) Poly (Methyl methacrylic acid glycidyl ester) Poly (t-Butyl cake gallate plate) Poly (Acetophenone) Poly (η-isopropyl · · Ammonium propionate) Dedicated nano-sized particles are oxidized by oxygen to remove (rather than dissolve) 'the first advantage is that some dedicated particles are easy to buy (that is, easily available on the market)' · its second advantage For this removal method only one reaction chamber is required when performing steps 5 and 6. The reaction chamber was evacuated, and then filled with active oxygen (that is, a mixture of oxygen molecules and oxygen atoms provided by a remote oxygen plasma and ozone generated by ultraviolet rays), and the substrate temperature was maintained at 200 ° c. _3 50 ° c, the operating conditions must be continuously maintained until a relatively small number of nano-sized particles are converted to 'after rhombohedral oxidation and other oxidation products'. Among them, the adjustment of the oxidation state must be done in a way that does not allow carbon or graphite deposition residues to remain Above the surface of the inorganic nanoscale particles, as this may increase the dielectric constant of the formed film. In the fourth embodiment, most of the structural particles may be composed of silicon dioxide, while the larger few particles (dedication particles) are composed of one of the following [dioxide dioxide, paper size applicable to Chinese National Standards (CNS) A4 specification (210 X 297 mm I .------------ curtain -------- if --------- line C please read 03.意 意 事 顼 save and fill in this purchase) Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by 471104 The aforementioned formula ^ is DA. After dedicating the particle tip, it is removed by using the fan method. Fifth Embodiment The fifth embodiment is different from the foregoing figures in the nano-level particles or another suitable tree. Zhashe structure r child, h 'we use ^ machine nano-grade particles as the knot of the majority, and the following 丨 Zhalu, & Wanghua ... as a minority of dedication particles: a-Xin Too: Siliconized silicon, silicon dioxide, or a molecular crystal (such as Fan). The structure of this di 'prime T and meter particles is formed in step 1 to step 3. These particles are subsequently and cross-linked. After that, the dedication particles are removed with appropriate ... decomposition chemicals, among which the germanium dioxide particles are engraved with a test aqueous solution, nitrogen poem and gardenia dioxide are used for hydrofluoric acid Here, the nano-sized particles of molecular crystals (such as using dilute in toluene to remove them, where toluene will swell but will not dissolve the tree milk particle network. Sixth Embodiment In this different embodiment, The diameter of the consecrated particles is DA, and the diameter of the structured particles is DB ', and their correlation is DB / DA = 〇6 ± · 〇5. These particles are mixed in step 1, and the mixing ratio is 13 smaller ones. The ratio of the devotion particle to a larger structured particle. At the end of step 4, the film structure formed is shown in Figure 4 and the structure is formed by the larger structured particles. The cubic lattice structure is arranged. In each cubic unit cell, there are a set of smaller dedicated particles 1 3. This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). ---- Order --------- line (Please read the note on the back first Please fill in this page again) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 471104 A7 B7_____ V. Description of the invention () Manufacture of structured nanometer particles Square structured nanometer particle materials are prepared by thermal dispersion synthesis. The σ formation method firstly heats a high-boiling-point solvent to about 2000-400C in advance, and any suitable inert substance high-boiling-point solvent can be used. Aromatic acids and materials with substituted aromatic ethers are more suitable. A good solvent source, the preferred mode of the latter is R7 ~ ph-〇-ph-R8, where Ph is phenyl 'and R7 and R can be the same or different, and they are selected from phenyl and about Ci to Cs. Examples of other suitable solvents are aromatic ethers, materials with substituted aromatic hydrocarbons, unsaturated hydrocarbons with high boiling points (such as isacosane or 2,6,1 0,1 5,1 9,23 hexamethyl Hexame thy (tetracosane), and perfluoroolefins (such as perfluoro kerosene). The preferred solvent is phenyl ether at a temperature of about 250 ° C. A stable complex matrix is added to the solvent. Among them, it is a better practice, in which the addition of the complex matrix is discussed below. The base siloxane, organosilane, siloxane, silane, and / or cystanil precursor compounds are placed in a syringe and quickly Injected into the pre-heated solvent, the precursor compound will be rapidly thermally decomposed, and small amorphous silicon-containing particles will nucleate. The solvent is heated for about 30 minutes, and the particles grow. At this time, the size of the particles is about It is 5nm. In addition, the heating time can be increased or shortened to apply to the growth of larger and smaller particles, respectively. The structure of the preferred halosilane precursor compound is R4Si Y3 ', where R4 is about Ci to Cs. , And γ Halogen, and chlorine is preferred. One of the preferred siloxane compounds that can be used in the present invention is hydrogen-half times. Page 15 This paper applies Chinese National Standard (CNS) A4 (210 X 297 mm)- --IIII 1 III 1 *, I 1 II 丨 II · 1 丨 — 丨 — — 丨 _ (Please read the notes on the back before filling out this page) 471104 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Α7 Β7 V. Description of the invention () Hydro-silsesquioxane, the general structure of which is HnSin03 / 2n, where n is about J to. In a comparative example, the precursor compound is an organosiloxane precursor compound. In the invention, the 'organosiloxane compounds are straight, bifurcated, or structured compounds, which contain at least silicon, oxygen, and carbon. The preferred organic compound is sesesquioxanes. Cyclosiloxane. Examples of in silsesquioxane are incomplete condensation and intact sesquioxide. Oxygen burning is one of the incomplete ones whose molecular formula is (fTSi〇3M) n (H2〇) 3n / 2 'Wherein Rs is an alkyl group of about ^ to Cs, and ^ is about 1 to 10. In addition Incomplete condensed silsesquioxane is formed when R3Si (0Η) 3 is heated and water has been removed. Incomplete condensed silsesquioxane is water for partially condensed silsesquioxane. It is formed after removal. Currently available on the market, complete coagulation times + dream oxidizing can be used in the present invention. Η is 6, 8 and 10. Cyclic radical oxygen sintering can also be used as a precursor of the present invention Compounds, the preferred formula of cyclammonium oxide is R3nHn (Si〇) nl Rs2n (Si〇) n, where R5 is about C 'to Cs alkyl' and ^ is about 1 to i0. Another preferred molecular formula is based on CH30 (SiO (CH30) 2) n ', where n is about 1 to 10. More preferred organosiloxanes and organosilane compounds are mixtures of TEOS, TMS, TMXTS, TECTS, cyclotetrasiloxane, cyclopentasiloxane, pentamethylpentaoxane and the above. The above compounds are used to form the preferred ones required by the present invention. Page 16 This paper is in accordance with Chinese National Standard (CNS) A4 ϋ 210 χ 297.

Ilf—-------裝------- -訂------- ·線 (請先閲讀背面之注音?事項再填寫本頁) 471104 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明() 機矽粒子。例如,以TE0S:TMS:TMCTS為1:3:2組成之混 合物形成的非晶粒子之S i : 0 : C的比例約為1 : 1 : 2. 3。粒子 中碳含量的高低可經由對該比例及其前驅化合物之碳含 量加以更改而製得。例如,TECTS可被使用在上述之混合 物中,而不用TMCTS,以增加形成粒子之碳含量。 當這些粒子成長至所需之大小時,反應就被降至一低 溫,以使粒子停止成長,之後就被加上一穩定配合基體, 其中該溫度小於約150°C,且以小於10CTC為佳,並以小 於約60°C為更佳。該穩定配合基體以具有XsSiR的結構為 佳,其中X為約C i至C4的烷氧基或為一鹵素,而r大約 為C8至Cso的烷基。更佳的做法是,R大約為c12至c24 的捷‘基’並以大約C i 6至C 2 G的燒基為更佳。當穩定配合 基體加入時,其就與粒子表面鍵結。此外,這些粒子可以 選擇性加以回火,其方式為將溶液溫度提升至300至3 5〇 °C,並將該温度維持一定之時間。 加以有機鍍膜之粒子可利用一極性溶劑(如乙醇)而沉 澱。此外,可以利用對某些特定大小之粒子加以沉殿,而 使粒子隔離及純化,並因此形成幾近單向散開之部份粒 子。 對特定大小之粒子沉澱的第一實施例與一極性溶劑 的漸增有關。首先,一選定量之極性溶劑被加至鍍有有機 膜-之粒子混合物上。在此過程中,最大之鍍有機膜粒子最 先沉澱,並可利用離心設備或過濾設備將之隔離。接著, 極性溶劑被加至有機鍍膜粒子混合物中,那麼稍小的粒子 第17頁 . 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 2町公釐) ! — — — — — — — — — — —---丨—訂· I I I — I I 丨 — (請先閱讀背面之注意事項再填寫本頁) 471104 A7 ________________ 五、發明說明() -------------裝--- (請先閲讀背面之注意事項再填寫本頁) 就因此沉澱。依此方法行之,各種大小之粒子都可因此製 備而得。為了要形成幾近單向散開之大小的粒子,被隔離 的部份都可以在一非極性溶劑中重新散開,並可進行更多 的粒子大小選定沉澱動作,以得到任意且更相近大小差異 之單向散開粒子。 在此介紹粒子大小選定沉澱的第二個方法,其包含將 粒子在兩種溶劑構成的混合物中溶解:一揮發性較強且為 非極性之溶劑(如戊烷),另一則為揮發性較弱且為極性的 溶劑。溶劑混合物在緩慢蒸發時,揮發性較強且為非極性 之溶劑的含量就減少,這使得最大有機鍍膜粒子沉澱。接 下來再對稍小之粒子進行進一步蒸發,那麼各種大小粒子 都可因此獲得,並可因此得到近乎單向散開之各種尺寸的 粒子。 二氧化鍺粒子之合成 線 經濟部智慧財產局員工消費合作社印製 二氧化鍺粒子係由熱熱分解合成製成,其與上述用於 碳氧化矽Η粒子者相同。選定一高沸點溶劑,較佳者為雙 甲基醚’且與以上所列之溶劑不同。較佳之前驅物為氣氧 化鍺及鍺之烷氧基,其中鍺之烷氧基具有GeR4的結構, 其中 R 為-〇-CH3、-0-CH2CH3、-CUCH2CH2CH3 或乂〇-ch2(ch3)2。 _其餘的前驅物(特別是GeX4,其中X為氯、漠或碟) 可與較佳前驅物混合,以增強粒子的成核現象。但是, 一疋’錯 並不像梦一般容易氧化’所以可使用包含〇 - 2 0 %之氧的門 第18頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) 471104. A7 B7 Η 所 改 五、發明説明( 圍空氣來加速二氧化諸之形成。上述應用在二氧化硬合成 中的穩定配合基體同樣也可以應用在二氧化鍺粒子的穩 定上。二氧化鍺粒子之大小選擇方法與前述之碳氧化砂 粒子之選擇方法相同。 本發明已可經由前述之文字說明與舉圖例說明而 以了解。但當了解的是本發明之範圍並不僅侷限於以上 說明之實施例,實則應包含所有對以上實施例進行之夂 及其等效範圍,這些都不脫離所附之專利申請範圍:改 勺精神 及範圍之外。 ——;-------ik— {請先閲讀背面之注意事項再填寫本頁) -、11. 經濟部智慧財產局員工消費合作社印製 張 紙 本Ilf —------- install ------- -order ------- · line (please read the phonetic on the back? Matters before filling out this page) 471104 Staff Consumption of Intellectual Property Bureau of the Ministry of Economic Affairs Cooperative printed A7 B7 V. Description of the invention () Organic silicon particles. For example, the ratio of Si: 0: C of an amorphous particle formed from a mixture of TE0S: TMS: TMCTS as 1: 3: 2 is about 1: 1: 2.3. The carbon content of the particles can be changed by changing the carbon content of this ratio and its precursors. For example, TECTS can be used in the above mixtures instead of TMCTS to increase the carbon content of the particles. When these particles grow to the required size, the reaction is reduced to a low temperature to stop the particles from growing, and then a stable complex matrix is added, where the temperature is less than about 150 ° C, and preferably less than 10CTC , And preferably less than about 60 ° C. The stable complexing base preferably has a structure of XsSiR, where X is an alkoxy group of about C i to C4 or a halogen, and r is an alkyl group of about C8 to Cso. More preferably, R is about the radical 'c12' of c12 to c24 and more preferably about the calcined group of C i 6 to C 2 G. When the stable coordination matrix is added, it is bonded to the particle surface. In addition, these particles can be optionally tempered by raising the solution temperature to 300 to 350 ° C and maintaining the temperature for a certain period of time. Organic coated particles can be deposited using a polar solvent such as ethanol. In addition, some particles of a certain size can be immersed to isolate and purify the particles, and thus form a part of the particles that are almost unidirectionally scattered. The first embodiment of the precipitation of particles of a specific size is related to the increase of a polar solvent. First, a selected amount of a polar solvent is added to an organic film-coated particle mixture. In this process, the largest organic-coated particles first precipitate and can be isolated by centrifugation or filtration equipment. Then, the polar solvent is added to the organic coating particle mixture, so the smaller particles are on page 17. This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 2 mm)! — — — — — — — — — — — —- 丨 丨 Order III — II 丨 — (Please read the notes on the back before filling this page) 471104 A7 ________________ V. Description of the invention () ------------ -Install --- (Please read the precautions on the back before filling out this page) This is the reason. In this way, particles of various sizes can be prepared. In order to form particles that are almost unidirectionally dispersed, the isolated parts can be re-dispersed in a non-polar solvent, and more particles can be selected for precipitation to obtain arbitrary and similar size differences. Diffuse particles in one direction. Here we introduce the second method of selecting the particle size for precipitation, which involves dissolving the particles in a mixture of two solvents: a more volatile and non-polar solvent (such as pentane), and the other is more volatile Weak and polar solvents. When the solvent mixture is slowly evaporated, the content of the more volatile and non-polar solvent decreases, which causes the largest organic coating particles to precipitate. Next, the smaller particles are further evaporated, so that particles of various sizes can be obtained, and particles of various sizes that are nearly unidirectionally dispersed can be obtained as a result. Synthetic line of germanium dioxide particles Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Germanium dioxide particles are synthesized by thermal decomposition, which are the same as those used for silicon oxide particles. A high boiling point solvent is selected, preferably dimethyl ether 'and different from the solvents listed above. Preferred precursors are gaseous germanium oxide and germanium alkoxy groups, wherein the germanium alkoxy group has the structure of GeR4, where R is -0-CH3, -0-CH2CH3, -CUCH2CH2CH3 or 乂 〇-ch2 (ch3) 2. _ The remaining precursors (especially GeX4, where X is chlorine, Mo or Dish) can be mixed with better precursors to enhance the nucleation of particles. However, a 'wrong is not easy to oxidize like a dream', so a door containing 0-20% oxygen can be used. Page 18 This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm) 471104. A7 B7 改 Modified V. Description of the invention (Environmental air to accelerate the formation of dioxide. The above-mentioned stable coordination matrix used in hard dioxide synthesis can also be used to stabilize germanium dioxide particles. The method for selecting the size is the same as the method for selecting the carbon oxide sand particles described above. The present invention can be understood through the foregoing text description and illustrations. However, it should be understood that the scope of the present invention is not limited to the embodiments described above. , In fact, should include all the implementation of the above embodiments and their equivalent scope, which do not depart from the scope of the attached patent application: the spirit and scope of the change. ——; ------- ik— { (Please read the notes on the back before filling out this page)-11. Printed on paper by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

Claims (1)

471104 、ί_·_ 丨'丨丨..-||· ^l 修正丨 A8 B8 C8 D8 六、申請專利範圍 第对〜號專利案%年7月修正 1. 一種製造一多孔性介電體之方法,該方法至少包含下列-步騾: a)提供一溶劑 第一量奉獻奈米級粒子及一第二 量結構奈米級粒子之混合物,其中該結構奈米級粒子包 含低有機成份; b) 濃縮該混合物’以讓該結構奈米級粒子組成一晶 格結.構’且該結構中有奉獻奈米級粒子綴於其中; c) 處理該晶格結構,以使該結構奈米級粒子融化, 並使該晶格結構及該多孔性介電體硬化;及 d) 從該晶格結構中移出該奉獻奈米級粒予,以在該 晶格中留下孔洞。 2 ·如申請專利範圍第1項所述之方法,其中更包含下列步 驟: e) 在該孔洞之表面上鍍以一層忌水性材料。 i--------^---------線 (請先閱讀背面之注意事項再填寫本頁) 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作社. 印 製 3.如申請專利範圍第1項所述之方法’其中該步騾c)將能 量加至該晶格結構,以使該有機成份產生交鍵。, 4 _如申請專利範圍第1項所述之方法,其中該結構奈米級 粒子由一有機碎所組成,且該有機發的結構為 SiaObCcHd,其中a、b、及c的莫耳分數約為0.〇5至〇·5 而d則約為0至0.5。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 經濟部智慧財產局員工消費合作社印製 471104 A8 B8 C8 D8 、申請專利範圍 5 .如申請專利範圍第4項所述之方法,其中該a、b及c 的莫耳分數以分別約為0.1至〇·4、0.1至0·4及0.1至 0* 5為佳;而d則以約0.0 5至0.4為佳。 6. 如申請專利範圍第4項所述之方法,其中該a、b及c 的莫耳分數以分別約為〇」5至0.25、0.2至0.35及0.15 至0.4為佳;而d則以約0,1至0 · 4為佳。 7. 如申請專利範圍第1項所述之方法,其中該奉獻奈米級 粒子為鍺及氧所組成。 8. 如申請專利範圍第1項所述之方法,其中該奉獻奈米級 粒子為分子晶體所組成。 9. 如申請專利範圍第1項所述之方法,其中該奉獻奈米級 粒子為 及贗之至少一者所組成。 1 〇.如申請專利範圍第1項所述之方法,其中該奉獻奈米級 粒子為至少一種有機聚合物所組成。 1 1 .如申請專利範圍第1項所述之方法,其中該奉獻奈米級 粒子為下列之至少一者所組成: PBMA, PAA, PMMA, PGMMA, PTBA, PS 或 polyNIPAM。 第21頁 本紙張尺度適用中國國家標準(CNS)A4規格(21〇χ 297公釐) r--------«.*-------訂--------I I (讀先閲讀背面之注意事項再填寫本頁) 471104 A8 B8 C8 D8 、申請專利範圍 1 2.如申請專利範圍第1項所述之方法,其中該奉獻奈米級 粒子的直徑大於該結構奈米級粒子。 1 3 .如申請專利範圍第1項所述之方法,其中在步騾d)中 對該奉獻奈米級粒子的移除係經由一溶劑的使用而達 成。 1 4.如申請專利範圍第1項所述之方法,其中在步驟d)中 對該奉獻奈米級粒子的移除係經由對該奉獻奈米級粒 子氧化而達成。 1 5. —種包含一多孔體的元件,該裝置包含電性隔離之奈米 級粒子,且該奈米級粒子被融化在一起,該元件更包含 一選定量之幾為奈米級粒子大小的幾為均勻大小孔 洞,該孔洞大致以週期性的方式分佈在該多孔體中。 1 6.如申請專利範圍第1 5項所述之元件,其中該電性隔離 之奈米級粒子利用經交鍵的有機分子而融化在一起。 1 7.如申請專利範圍第1 5項所述之元件,其中該電性隔離 之奈米級粒子至少包含有基矽氧烷,且該矽氧烷的分子 式為SiaObCcHd,其中該a、b及c的莫耳分數約為0.05 至0.5,而d則約為0至0.5。 第22頁 本紙張尺度適用中國國家標準(CNS)規格(210 X 297公釐) -請 先 閲 讀 背 之 注 意 事 項 再 填 :裝 頁 I ! I I ! I I 線 經濟部智慧財產局員工消費合作社印製 471104 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 1 8.如申請專利範圍第1 5項所述之元件,其中該a、b及(Γ 的莫耳分數以分別约為〇. 1至〇 . 4、〇 . 1至〇 · 4及0.1至 0.5為佳,而d則約為0.0 5至0 _ 4為佳。 1 9.如申請專利範圍第1 8項所述之元件,其中該a、b及c 的莫耳分數以分別約為0.15至0.25、0·2至0.35及0.15 至0.4為佳,而d則約為0 · 1至0.4為佳。 2 0 .如申請專利範圍第1 5項所述之元件,其中該電性隔離 之奈米級粒子被鍍以一層忌水性材料。 2 1 .如申請專利範圍第20項所述之元件’其中該忌水性材 料係從六曱基二矽氮烷或六苯基二矽氮烷。 22.如申請專利範圍第1 5項所述之元件,其中該孔洞大致 均勻排列在該多孔體之僅一部份之内° 2 3 .如申請專利範圍第1 6項所述之元件,其中該經交鍵之 有機分子係選自由具烴屬烴、 屬烴 '丙晞酸及苯乙晞 端點之分子所組成的群組中。 24.如申請專利範圍第1 5項所述之元件,其中該均勻大小 之孔洞的大小約為 〇. 5至約 1 Onm,且該孔之間隔約為 1 至約20nm。 第23頁 本紙張尺度適用中國國家標準(CNS)A4規轄^(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 衣-n n n I— n I n )5J· n I n fa 1 線:471104 ί_ · _ 丨 '丨 丨 ..- || ^ l Amendment A8 B8 C8 D8 Sixth, the scope of the patent application for the number of pairs of patents ~ ~% amended in July 1. A method of manufacturing a porous dielectric Method, the method comprises at least the following steps: a) providing a mixture of a first amount of dedicated nanometer-sized particles and a second amount of structured nanometer-sized particles, wherein the structured nanometer-sized particles include a low organic component; b) Concentrate the mixture 'to make the structural nano-scale particles form a lattice junction. Structure' and dedicate nano-scale particles entangled in the structure; c) process the lattice structure to make the structural nano-scale The first-order particles melt and harden the lattice structure and the porous dielectric body; and d) remove the dedicated nano-scale particles from the lattice structure to leave holes in the lattice. 2. The method as described in item 1 of the scope of patent application, which further comprises the following steps: e) The surface of the hole is plated with a layer of water-repellent material. i -------- ^ --------- line (Please read the notes on the back before filling out this page) Employee Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Printing 3. If the scope of patent application The method according to item 1, wherein the step (c) adds energy to the lattice structure so that the organic component is cross-linked. 4 _ The method as described in item 1 of the scope of the patent application, wherein the structured nano-sized particles are composed of an organic particle, and the structure of the organic hair is SiaObCcHd, wherein the Mohr fractions of a, b, and c are about It is 0.05 to 0.5 and d is about 0 to 0.5. This paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm). Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 471104 A8 B8 C8 D8. The scope of patent application 5. As described in item 4 of the scope of patent application In the method, the mole fractions of a, b, and c are preferably about 0.1 to 0.4, 0.1 to 0.4, and 0.1 to 0 * 5, respectively; and d is about 0.05 to 0.4. 6. The method as described in item 4 of the scope of patent application, wherein the mole fractions of a, b, and c are preferably about 0 to 5 to 0.25, 0.2 to 0.35, and 0.15 to 0.4, respectively; and d is about 0,1 to 0 · 4 are preferred. 7. The method according to item 1 of the scope of patent application, wherein the dedicated nano-sized particles are composed of germanium and oxygen. 8. The method according to item 1 of the scope of patent application, wherein the dedicated nano-sized particles are composed of molecular crystals. 9. The method according to item 1 of the scope of patent application, wherein the dedicating nanometer-sized particles are composed of at least one of and 赝. 10. The method according to item 1 of the scope of the patent application, wherein the dedicated nano-scale particles are composed of at least one organic polymer. 1 1. The method as described in item 1 of the scope of patent application, wherein the dedicated nano-sized particles are composed of at least one of the following: PBMA, PAA, PMMA, PGMMA, PTBA, PS or polyNIPAM. Page 21 This paper size applies the Chinese National Standard (CNS) A4 specification (21〇χ 297 mm) r -------- «. * ------- Order ------- -II (read the precautions on the back before filling this page) 471104 A8 B8 C8 D8, patent application scope 1 2. The method described in item 1 of the patent application scope, wherein the diameter of the dedicated nano-sized particles is larger than that Structural nano-scale particles. 13. The method according to item 1 of the scope of patent application, wherein the removal of the dedicated nano-sized particles in step d) is achieved by using a solvent. 14. The method according to item 1 of the scope of patent application, wherein in step d) the removal of the dedicated nano-sized particles is achieved by oxidizing the dedicated nano-sized particles. 1 5. A device comprising a porous body, the device comprises electrically isolated nanometer-sized particles, and the nanometer-sized particles are melted together, and the device further includes a selected amount of nanometer-sized particles. The large and small ones are uniformly sized pores, and the pores are distributed in the porous body in a substantially periodic manner. 16. The component according to item 15 of the scope of patent application, wherein the electrically isolated nanometer-sized particles are fused together using cross-linked organic molecules. 1 7. The component as described in item 15 of the scope of the patent application, wherein the electrically isolated nano-sized particles include at least a base siloxane, and the molecular formula of the siloxane is SiaObCcHd, wherein a, b and The mole fraction of c is about 0.05 to 0.5, and d is about 0 to 0.5. Page 22 This paper size applies Chinese National Standards (CNS) specifications (210 X 297 mm)-Please read the notes before filling in: Page I! II! II Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 471104 Printed by A8, B8, C8, D8, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Scope of Patent Application 1 8. The components described in item 15 of the scope of patent application, where the Mohr scores of a, b, and (Γ are divided by About 0.1 to 0.4, 0.1 to 0.4, and 0.1 to 0.5 are preferred, and d is preferably about 0.05 to 0_4. 1 9. As described in item 18 of the scope of patent application The elements described above, wherein the Mohr fractions of a, b, and c are preferably about 0.15 to 0.25, 0.2 to 0.35, and 0.15 to 0.4, respectively, and d is preferably about 0.1 to 0.4. 2 0 The component according to item 15 of the scope of the patent application, wherein the electrically isolated nano-sized particles are plated with a layer of water-repellent material. 2 1. The component according to item 20 of the scope of the patent application, wherein the avoidance The water-based material is from hexamethyldisilazane or hexaphenyldisilazane. The element in which the pores are arranged approximately uniformly within only a part of the porous body. 2 3. The element according to item 16 of the patent application range, wherein the cross-linked organic molecule is selected from the group consisting of hydrocarbons In the group consisting of hydrocarbons, hydrocarbons of 'propionic acid and phenylacetic acid end point. 24. The element according to item 15 of the scope of patent application, wherein the size of the uniformly-sized holes is about 0. 5 to about 1 Onm, and the interval between the holes is about 1 to about 20 nm. Page 23 This paper size applies the Chinese National Standard (CNS) A4 regulation ^ (210 X 297 mm) (Please read the note on the back first Please fill in this page again for matters) Yi-nnn I— n I n) 5J · n I n fa 1 Line:
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