JP4621400B2 - 半導体基板処理装置 - Google Patents
半導体基板処理装置 Download PDFInfo
- Publication number
- JP4621400B2 JP4621400B2 JP2001547635A JP2001547635A JP4621400B2 JP 4621400 B2 JP4621400 B2 JP 4621400B2 JP 2001547635 A JP2001547635 A JP 2001547635A JP 2001547635 A JP2001547635 A JP 2001547635A JP 4621400 B2 JP4621400 B2 JP 4621400B2
- Authority
- JP
- Japan
- Prior art keywords
- supercritical
- module
- photoresist
- transfer module
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 73
- 239000000758 substrate Substances 0.000 title claims description 24
- 238000012545 processing Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 claims description 149
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 84
- 238000012546 transfer Methods 0.000 claims description 61
- 239000001569 carbon dioxide Substances 0.000 claims description 42
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 42
- 239000012530 fluid Substances 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 62
- 235000012431 wafers Nutrition 0.000 description 56
- 238000005530 etching Methods 0.000 description 28
- 239000002904 solvent Substances 0.000 description 22
- 238000001465 metallisation Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000003599 detergent Substances 0.000 description 9
- 238000011161 development Methods 0.000 description 9
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000007689 inspection Methods 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000012636 effector Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Extraction Or Liquid Replacement (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16312199P | 1999-11-02 | 1999-11-02 | |
| US60/163,121 | 1999-11-02 | ||
| PCT/US2000/041853 WO2001046999A2 (en) | 1999-11-02 | 2000-11-01 | Method and apparatus for supercritical processing of a workpiece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003518736A JP2003518736A (ja) | 2003-06-10 |
| JP4621400B2 true JP4621400B2 (ja) | 2011-01-26 |
Family
ID=22588579
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001535218A Expired - Fee Related JP5073902B2 (ja) | 1999-11-02 | 2000-11-01 | 多数のワークピースを超臨界処理する方法及び装置 |
| JP2001547635A Expired - Lifetime JP4621400B2 (ja) | 1999-11-02 | 2000-11-01 | 半導体基板処理装置 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001535218A Expired - Fee Related JP5073902B2 (ja) | 1999-11-02 | 2000-11-01 | 多数のワークピースを超臨界処理する方法及び装置 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US7060422B2 (enExample) |
| EP (2) | EP1243021A2 (enExample) |
| JP (2) | JP5073902B2 (enExample) |
| KR (2) | KR100742473B1 (enExample) |
| CN (2) | CN1192417C (enExample) |
| AU (2) | AU3267201A (enExample) |
| CA (2) | CA2387373A1 (enExample) |
| TW (1) | TW484169B (enExample) |
| WO (2) | WO2001046999A2 (enExample) |
Families Citing this family (80)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW539918B (en) | 1997-05-27 | 2003-07-01 | Tokyo Electron Ltd | Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process |
| US6497239B2 (en) | 1999-08-05 | 2002-12-24 | S. C. Fluids, Inc. | Inverted pressure vessel with shielded closure mechanism |
| US6612317B2 (en) | 2000-04-18 | 2003-09-02 | S.C. Fluids, Inc | Supercritical fluid delivery and recovery system for semiconductor wafer processing |
| US6748960B1 (en) | 1999-11-02 | 2004-06-15 | Tokyo Electron Limited | Apparatus for supercritical processing of multiple workpieces |
| JP5073902B2 (ja) | 1999-11-02 | 2012-11-14 | 東京エレクトロン株式会社 | 多数のワークピースを超臨界処理する方法及び装置 |
| US6890853B2 (en) | 2000-04-25 | 2005-05-10 | Tokyo Electron Limited | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
| KR100750018B1 (ko) * | 2000-07-26 | 2007-08-16 | 동경 엘렉트론 주식회사 | 반도체 기판의 처리를 위한 고압 챔버 및 반도체 기판의고압 처리를 위한 장치 |
| US6562146B1 (en) | 2001-02-15 | 2003-05-13 | Micell Technologies, Inc. | Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide |
| AU2002303842A1 (en) * | 2001-05-22 | 2002-12-03 | Reflectivity, Inc. | A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants |
| US6958123B2 (en) * | 2001-06-15 | 2005-10-25 | Reflectivity, Inc | Method for removing a sacrificial material with a compressed fluid |
| US6666928B2 (en) | 2001-09-13 | 2003-12-23 | Micell Technologies, Inc. | Methods and apparatus for holding a substrate in a pressure chamber |
| US6706641B2 (en) | 2001-09-13 | 2004-03-16 | Micell Technologies, Inc. | Spray member and method for using the same |
| US6619304B2 (en) | 2001-09-13 | 2003-09-16 | Micell Technologies, Inc. | Pressure chamber assembly including non-mechanical drive means |
| US6782900B2 (en) | 2001-09-13 | 2004-08-31 | Micell Technologies, Inc. | Methods and apparatus for cleaning and/or treating a substrate using CO2 |
| US6763840B2 (en) | 2001-09-14 | 2004-07-20 | Micell Technologies, Inc. | Method and apparatus for cleaning substrates using liquid carbon dioxide |
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| US7387868B2 (en) | 2002-03-04 | 2008-06-17 | Tokyo Electron Limited | Treatment of a dielectric layer using supercritical CO2 |
| FR2838422A1 (fr) * | 2002-04-11 | 2003-10-17 | Memscap | Procede de fabrication de composants microelectromecaniques |
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| JP3861798B2 (ja) * | 2002-11-19 | 2006-12-20 | 株式会社日立ハイテクサイエンスシステムズ | レジスト現像処理装置とその方法 |
| JP2004228526A (ja) * | 2003-01-27 | 2004-08-12 | Tokyo Electron Ltd | 基板処理方法および半導体装置の製造方法 |
| US7021635B2 (en) | 2003-02-06 | 2006-04-04 | Tokyo Electron Limited | Vacuum chuck utilizing sintered material and method of providing thereof |
| US7077917B2 (en) | 2003-02-10 | 2006-07-18 | Tokyo Electric Limited | High-pressure processing chamber for a semiconductor wafer |
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| US7270137B2 (en) | 2003-04-28 | 2007-09-18 | Tokyo Electron Limited | Apparatus and method of securing a workpiece during high-pressure processing |
| US7226512B2 (en) * | 2003-06-18 | 2007-06-05 | Ekc Technology, Inc. | Load lock system for supercritical fluid cleaning |
| DE102004029077B4 (de) * | 2003-06-26 | 2010-07-22 | Samsung Electronics Co., Ltd., Suwon | Vorrichtung und Verfahren zur Entfernung eines Photoresists von einem Substrat |
| KR100505693B1 (ko) * | 2003-06-26 | 2005-08-03 | 삼성전자주식회사 | 미세 전자 소자 기판으로부터 포토레지스트 또는 유기물을세정하는 방법 |
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| US10454029B2 (en) | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
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| US10179941B1 (en) * | 2017-07-14 | 2019-01-15 | Applied Materials, Inc. | Gas delivery system for high pressure processing chamber |
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| KR102037918B1 (ko) * | 2017-11-28 | 2019-10-29 | 세메스 주식회사 | 기판 처리 방법 및 기판 처리 장치 |
| CN112005343B (zh) | 2018-03-02 | 2025-05-06 | 朗姆研究公司 | 使用水解的选择性沉积 |
| KR102554014B1 (ko) * | 2018-06-15 | 2023-07-11 | 삼성전자주식회사 | 저온 식각 방법 및 플라즈마 식각 장치 |
| KR102225957B1 (ko) | 2018-09-12 | 2021-03-11 | 세메스 주식회사 | 기판 처리 장치 |
| KR102636979B1 (ko) * | 2019-04-26 | 2024-02-14 | 삼성전자주식회사 | 멀티 챔버 장치 |
| JP7546000B2 (ja) | 2019-06-04 | 2024-09-05 | ラム リサーチ コーポレーション | パターニングにおける反応性イオンエッチングのための重合保護層 |
| WO2021025874A1 (en) | 2019-08-06 | 2021-02-11 | Lam Research Corporation | Thermal atomic layer deposition of silicon-containing films |
| US12412742B2 (en) | 2020-07-28 | 2025-09-09 | Lam Research Corporation | Impurity reduction in silicon-containing films |
| WO2023283144A1 (en) | 2021-07-09 | 2023-01-12 | Lam Research Corporation | Plasma enhanced atomic layer deposition of silicon-containing films |
| KR102726735B1 (ko) | 2021-12-17 | 2024-11-05 | 삼성전자주식회사 | 기판 처리 장치 및 방법 |
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2000
- 2000-11-01 JP JP2001535218A patent/JP5073902B2/ja not_active Expired - Fee Related
- 2000-11-01 CN CNB008152985A patent/CN1192417C/zh not_active Expired - Fee Related
- 2000-11-01 AU AU32672/01A patent/AU3267201A/en not_active Abandoned
- 2000-11-01 CA CA002387373A patent/CA2387373A1/en not_active Abandoned
- 2000-11-01 EP EP00992996A patent/EP1243021A2/en not_active Withdrawn
- 2000-11-01 EP EP00991448A patent/EP1234322A2/en not_active Withdrawn
- 2000-11-01 WO PCT/US2000/041853 patent/WO2001046999A2/en not_active Ceased
- 2000-11-01 JP JP2001547635A patent/JP4621400B2/ja not_active Expired - Lifetime
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- 2000-11-01 KR KR1020027005569A patent/KR100742473B1/ko not_active Expired - Lifetime
- 2000-11-01 CN CNB008152993A patent/CN1175470C/zh not_active Expired - Fee Related
- 2000-11-01 KR KR1020027005570A patent/KR100744888B1/ko not_active Expired - Fee Related
- 2000-11-01 AU AU49022/01A patent/AU4902201A/en not_active Abandoned
- 2000-11-01 CA CA002387341A patent/CA2387341A1/en not_active Abandoned
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-
2003
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- 2003-03-06 US US10/384,096 patent/US6926798B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1234322A2 (en) | 2002-08-28 |
| US7060422B2 (en) | 2006-06-13 |
| EP1243021A2 (en) | 2002-09-25 |
| US6926798B2 (en) | 2005-08-09 |
| KR100744888B1 (ko) | 2007-08-01 |
| TW484169B (en) | 2002-04-21 |
| CN1192417C (zh) | 2005-03-09 |
| US20030136514A1 (en) | 2003-07-24 |
| KR20020047315A (ko) | 2002-06-21 |
| CN1387673A (zh) | 2002-12-25 |
| AU4902201A (en) | 2001-07-03 |
| JP2003518736A (ja) | 2003-06-10 |
| JP5073902B2 (ja) | 2012-11-14 |
| CA2387373A1 (en) | 2001-06-28 |
| WO2001046999A3 (en) | 2002-07-11 |
| JP2003513466A (ja) | 2003-04-08 |
| WO2001046999A2 (en) | 2001-06-28 |
| KR20020047314A (ko) | 2002-06-21 |
| CN1399790A (zh) | 2003-02-26 |
| WO2001033615A3 (en) | 2001-12-06 |
| CA2387341A1 (en) | 2001-05-10 |
| AU3267201A (en) | 2001-05-14 |
| US20030150559A1 (en) | 2003-08-14 |
| WO2001033615A2 (en) | 2001-05-10 |
| KR100742473B1 (ko) | 2007-07-25 |
| CN1175470C (zh) | 2004-11-10 |
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