|
US6482262B1
(en)
|
1959-10-10 |
2002-11-19 |
Asm Microchemistry Oy |
Deposition of transition metal carbides
|
|
US4524587A
(en)
|
1967-01-10 |
1985-06-25 |
Kantor Frederick W |
Rotary thermodynamic apparatus and method
|
|
US3684592A
(en)
|
1969-09-30 |
1972-08-15 |
Westinghouse Electric Corp |
Passivated surfaces and protective coatings for semiconductor devices and processes for producing the same
|
|
US3758316A
(en)
|
1971-03-30 |
1973-09-11 |
Du Pont |
Refractory materials and process for making same
|
|
US3749383A
(en)
|
1971-04-29 |
1973-07-31 |
Rca Corp |
Apparatus for processing semiconductor devices
|
|
US4409260A
(en)
|
1979-08-15 |
1983-10-11 |
Hughes Aircraft Company |
Process for low-temperature surface layer oxidation of a semiconductor substrate
|
|
US4424101A
(en)
|
1980-11-06 |
1984-01-03 |
The Perkin-Elmer Corp. |
Method of depositing doped refractory metal silicides using DC magnetron/RF diode mode co-sputtering techniques
|
|
US4589193A
(en)
|
1984-06-29 |
1986-05-20 |
International Business Machines Corporation |
Metal silicide channel stoppers for integrated circuits and method for making the same
|
|
US4576652A
(en)
|
1984-07-12 |
1986-03-18 |
International Business Machines Corporation |
Incoherent light annealing of gallium arsenide substrate
|
|
JPS634616A
(ja)
|
1986-06-25 |
1988-01-09 |
Hitachi Tokyo Electron Co Ltd |
蒸気処理装置
|
|
JPS6367721A
(ja)
|
1986-09-09 |
1988-03-26 |
Meidensha Electric Mfg Co Ltd |
アモルフアス炭素半導体膜の製造方法
|
|
JPH0748489B2
(ja)
|
1987-07-27 |
1995-05-24 |
富士通株式会社 |
プラズマ処理装置
|
|
US4879259A
(en)
|
1987-09-28 |
1989-11-07 |
The Board Of Trustees Of The Leland Stanford Junion University |
Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure
|
|
CA1308496C
(en)
|
1988-02-18 |
1992-10-06 |
Rajiv V. Joshi |
Deposition of tungsten on silicon in a non-self-limiting cvd process
|
|
US5114513A
(en)
|
1988-10-27 |
1992-05-19 |
Omron Tateisi Electronics Co. |
Optical device and manufacturing method thereof
|
|
US5167717A
(en)
|
1989-02-15 |
1992-12-01 |
Charles Boitnott |
Apparatus and method for processing a semiconductor wafer
|
|
JP2730695B2
(ja)
|
1989-04-10 |
1998-03-25 |
忠弘 大見 |
タングステン膜の成膜装置
|
|
US5126117A
(en)
|
1990-05-22 |
1992-06-30 |
Custom Engineered Materials, Inc. |
Device for preventing accidental releases of hazardous gases
|
|
US5175123A
(en)
|
1990-11-13 |
1992-12-29 |
Motorola, Inc. |
High-pressure polysilicon encapsulated localized oxidation of silicon
|
|
US5050540A
(en)
|
1991-01-29 |
1991-09-24 |
Arne Lindberg |
Method of gas blanketing a boiler
|
|
JP2996524B2
(ja)
|
1991-03-18 |
2000-01-11 |
松下電子工業株式会社 |
ポリイミド硬化装置
|
|
DE69233222T2
(de)
|
1991-05-28 |
2004-08-26 |
Trikon Technologies Ltd., Thornbury |
Verfahren zum Füllen eines Hohlraumes in einem Substrat
|
|
KR0155572B1
(ko)
|
1991-05-28 |
1998-12-01 |
이노우에 아키라 |
감압처리 시스템 및 감압처리 방법
|
|
US6238588B1
(en)
|
1991-06-27 |
2001-05-29 |
Applied Materials, Inc. |
High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
|
|
JPH0521347A
(ja)
|
1991-07-11 |
1993-01-29 |
Canon Inc |
スパツタリング装置
|
|
JPH0521310A
(ja)
|
1991-07-11 |
1993-01-29 |
Canon Inc |
微細パタン形成方法
|
|
JPH05129296A
(ja)
|
1991-11-05 |
1993-05-25 |
Fujitsu Ltd |
導電膜の平坦化方法
|
|
US5300320A
(en)
|
1992-06-23 |
1994-04-05 |
President And Fellows Of Harvard College |
Chemical vapor deposition from single organometallic precursors
|
|
US5319212A
(en)
|
1992-10-07 |
1994-06-07 |
Genus, Inc. |
Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors
|
|
JPH06283496A
(ja)
|
1993-03-26 |
1994-10-07 |
Dainippon Screen Mfg Co Ltd |
洗浄処理後の基板の乾燥処理装置
|
|
US5607002A
(en)
|
1993-04-28 |
1997-03-04 |
Advanced Delivery & Chemical Systems, Inc. |
Chemical refill system for high purity chemicals
|
|
US5578132A
(en)
|
1993-07-07 |
1996-11-26 |
Tokyo Electron Kabushiki Kaisha |
Apparatus for heat treating semiconductors at normal pressure and low pressure
|
|
JPH0766424A
(ja)
|
1993-08-20 |
1995-03-10 |
Semiconductor Energy Lab Co Ltd |
半導体装置およびその作製方法
|
|
JPH07158767A
(ja)
|
1993-12-09 |
1995-06-20 |
Kokusai Electric Co Ltd |
ゲートバルブ
|
|
US5460689A
(en)
|
1994-02-28 |
1995-10-24 |
Applied Materials, Inc. |
High pressure plasma treatment method and apparatus
|
|
US5880041A
(en)
|
1994-05-27 |
1999-03-09 |
Motorola Inc. |
Method for forming a dielectric layer using high pressure
|
|
US5597439A
(en)
|
1994-10-26 |
1997-01-28 |
Applied Materials, Inc. |
Process gas inlet and distribution passages
|
|
US5808245A
(en)
|
1995-01-03 |
1998-09-15 |
Donaldson Company, Inc. |
Vertical mount catalytic converter muffler
|
|
JPH08195493A
(ja)
|
1995-01-13 |
1996-07-30 |
Toshiba Corp |
薄膜トランジスタの製造方法
|
|
US5620524A
(en)
|
1995-02-27 |
1997-04-15 |
Fan; Chiko |
Apparatus for fluid delivery in chemical vapor deposition systems
|
|
US5858051A
(en)
|
1995-05-08 |
1999-01-12 |
Toshiba Machine Co., Ltd. |
Method of manufacturing optical waveguide
|
|
JP2872637B2
(ja)
|
1995-07-10 |
1999-03-17 |
アプライド マテリアルズ インコーポレイテッド |
マイクロ波プラズマベースアプリケータ
|
|
JP3684624B2
(ja)
|
1995-08-02 |
2005-08-17 |
ソニー株式会社 |
反応ガス供給装置
|
|
US5747383A
(en)
|
1995-09-05 |
1998-05-05 |
Taiwan Semiconductor Manufacturing Company Ltd |
Method for forming conductive lines and stacked vias
|
|
US5857368A
(en)
|
1995-10-06 |
1999-01-12 |
Applied Materials, Inc. |
Apparatus and method for fabricating metal paths in semiconductor substrates through high pressure extrusion
|
|
US5877087A
(en)
|
1995-11-21 |
1999-03-02 |
Applied Materials, Inc. |
Low temperature integrated metallization process and apparatus
|
|
JPH09296267A
(ja)
|
1995-11-21 |
1997-11-18 |
Applied Materials Inc |
高圧押出しによる、半導体基板における金属パスの製造装置および方法
|
|
US5677230A
(en)
|
1995-12-01 |
1997-10-14 |
Motorola |
Method of making wide bandgap semiconductor devices
|
|
US6077571A
(en)
|
1995-12-19 |
2000-06-20 |
The Research Foundation Of State University Of New York |
Conformal pure and doped aluminum coatings and a methodology and apparatus for their preparation
|
|
US5895274A
(en)
|
1996-01-22 |
1999-04-20 |
Micron Technology, Inc. |
High-pressure anneal process for integrated circuits
|
|
US5918149A
(en)
|
1996-02-16 |
1999-06-29 |
Advanced Micro Devices, Inc. |
Deposition of a conductor in a via hole or trench
|
|
KR980012044A
(ko)
|
1996-03-01 |
1998-04-30 |
히가시 데츠로 |
기판건조장치 및 기판건조방법
|
|
US5998305A
(en)
|
1996-03-29 |
1999-12-07 |
Praxair Technology, Inc. |
Removal of carbon from substrate surfaces
|
|
US5738915A
(en)
|
1996-09-19 |
1998-04-14 |
Lambda Technologies, Inc. |
Curing polymer layers on semiconductor substrates using variable frequency microwave energy
|
|
US6444037B1
(en)
|
1996-11-13 |
2002-09-03 |
Applied Materials, Inc. |
Chamber liner for high temperature processing chamber
|
|
US6082950A
(en)
|
1996-11-18 |
2000-07-04 |
Applied Materials, Inc. |
Front end wafer staging with wafer cassette turntables and on-the-fly wafer center finding
|
|
US5886864A
(en)
|
1996-12-02 |
1999-03-23 |
Applied Materials, Inc. |
Substrate support member for uniform heating of a substrate
|
|
US6071810A
(en)
|
1996-12-24 |
2000-06-06 |
Kabushiki Kaisha Toshiba |
Method of filling contact holes and wiring grooves of a semiconductor device
|
|
US5888888A
(en)
|
1997-01-29 |
1999-03-30 |
Ultratech Stepper, Inc. |
Method for forming a silicide region on a silicon body
|
|
JP2980052B2
(ja)
|
1997-03-31 |
1999-11-22 |
日本電気株式会社 |
半導体装置の製造方法
|
|
US6334249B2
(en)
|
1997-04-22 |
2002-01-01 |
Texas Instruments Incorporated |
Cavity-filling method for reducing surface topography and roughness
|
|
US7416611B2
(en)
*
|
1997-05-09 |
2008-08-26 |
Semitool, Inc. |
Process and apparatus for treating a workpiece with gases
|
|
KR100560049B1
(ko)
|
1997-05-10 |
2006-05-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
성막방법
|
|
JP2976931B2
(ja)
|
1997-06-04 |
1999-11-10 |
日本電気株式会社 |
半導体装置の製造方法
|
|
US6309713B1
(en)
|
1997-06-30 |
2001-10-30 |
Applied Materials, Inc. |
Deposition of tungsten nitride by plasma enhanced chemical vapor deposition
|
|
US6136664A
(en)
|
1997-08-07 |
2000-10-24 |
International Business Machines Corporation |
Filling of high aspect ratio trench isolation
|
|
US20030049372A1
(en)
|
1997-08-11 |
2003-03-13 |
Cook Robert C. |
High rate deposition at low pressures in a small batch reactor
|
|
KR100261017B1
(ko)
|
1997-08-19 |
2000-08-01 |
윤종용 |
반도체 장치의 금속 배선층을 형성하는 방법
|
|
US6348376B2
(en)
|
1997-09-29 |
2002-02-19 |
Samsung Electronics Co., Ltd. |
Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same
|
|
US5963817A
(en)
|
1997-10-16 |
1999-10-05 |
International Business Machines Corporation |
Bulk and strained silicon on insulator using local selective oxidation
|
|
JP3199006B2
(ja)
|
1997-11-18 |
2001-08-13 |
日本電気株式会社 |
層間絶縁膜の形成方法および絶縁膜形成装置
|
|
US6442980B2
(en)
|
1997-11-26 |
2002-09-03 |
Chart Inc. |
Carbon dioxide dry cleaning system
|
|
US6140235A
(en)
|
1997-12-05 |
2000-10-31 |
Applied Materials, Inc. |
High pressure copper fill at low temperature
|
|
KR100275727B1
(ko)
|
1998-01-06 |
2001-01-15 |
윤종용 |
반도체 장치의 커패시터 형성방법
|
|
JP3296281B2
(ja)
|
1998-01-22 |
2002-06-24 |
日本電気株式会社 |
スパッタリング装置及びスパッタリング方法
|
|
US6846739B1
(en)
|
1998-02-27 |
2005-01-25 |
Micron Technology, Inc. |
MOCVD process using ozone as a reactant to deposit a metal oxide barrier layer
|
|
US6164412A
(en)
|
1998-04-03 |
2000-12-26 |
Arvin Industries, Inc. |
Muffler
|
|
JP3955386B2
(ja)
|
1998-04-09 |
2007-08-08 |
富士通株式会社 |
半導体装置及びその製造方法
|
|
JPH11354515A
(ja)
|
1998-06-04 |
1999-12-24 |
Ishikawajima Harima Heavy Ind Co Ltd |
加圧式加熱炉
|
|
US6103585A
(en)
|
1998-06-09 |
2000-08-15 |
Siemens Aktiengesellschaft |
Method of forming deep trench capacitors
|
|
KR100319888B1
(ko)
|
1998-06-16 |
2002-01-10 |
윤종용 |
선택적 금속층 형성방법, 이를 이용한 커패시터 형성 및 콘택홀 매립방법
|
|
KR100287180B1
(ko)
|
1998-09-17 |
2001-04-16 |
윤종용 |
계면 조절층을 이용하여 금속 배선층을 형성하는 반도체 소자의 제조 방법
|
|
US6719516B2
(en)
|
1998-09-28 |
2004-04-13 |
Applied Materials, Inc. |
Single wafer load lock with internal wafer transport
|
|
KR100327328B1
(ko)
|
1998-10-13 |
2002-05-09 |
윤종용 |
부분적으로다른두께를갖는커패시터의유전막형성방버뵤
|
|
US20030101938A1
(en)
|
1998-10-27 |
2003-06-05 |
Applied Materials, Inc. |
Apparatus for the deposition of high dielectric constant films
|
|
KR100331544B1
(ko)
|
1999-01-18 |
2002-04-06 |
윤종용 |
반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
|
|
JP2000221799A
(ja)
|
1999-01-29 |
2000-08-11 |
Canon Inc |
画像形成装置
|
|
EP1084076B1
(en)
|
1999-03-04 |
2008-10-08 |
Surface Technology Systems Plc |
Chlorotrifluorine gas generator system
|
|
US6200893B1
(en)
|
1999-03-11 |
2001-03-13 |
Genus, Inc |
Radical-assisted sequential CVD
|
|
JP4096440B2
(ja)
|
1999-03-11 |
2008-06-04 |
三菱瓦斯化学株式会社 |
多層成形品
|
|
US6305314B1
(en)
|
1999-03-11 |
2001-10-23 |
Genvs, Inc. |
Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
|
|
WO2000060659A1
(en)
|
1999-04-02 |
2000-10-12 |
Silicon Valley Group, Thermal Systems Llc |
Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth
|
|
JP3892621B2
(ja)
|
1999-04-19 |
2007-03-14 |
株式会社神戸製鋼所 |
配線膜の形成方法
|
|
US6086730A
(en)
|
1999-04-22 |
2000-07-11 |
Komag, Incorporated |
Method of sputtering a carbon protective film on a magnetic disk with high sp3 content
|
|
JP3100372B1
(ja)
*
|
1999-04-28 |
2000-10-16 |
春男 上原 |
熱交換器
|
|
JP2000340671A
(ja)
|
1999-05-26 |
2000-12-08 |
Fujitsu Ltd |
半導体装置の製造方法及び半導体装置
|
|
JP2001053066A
(ja)
|
1999-05-28 |
2001-02-23 |
Tokyo Electron Ltd |
オゾン処理装置およびその方法
|
|
US6355558B1
(en)
|
1999-06-10 |
2002-03-12 |
Texas Instruments Incorporated |
Metallization structure, and associated method, to improve crystallographic texture and cavity fill for CVD aluminum/PVD aluminum alloy films
|
|
JP2000357699A
(ja)
|
1999-06-16 |
2000-12-26 |
Seiko Epson Corp |
半導体装置
|
|
EP1069213A3
(en)
|
1999-07-12 |
2004-01-28 |
Applied Materials, Inc. |
Optimal anneal technology for micro-voiding control and self-annealing management of electroplated copper
|
|
US6468490B1
(en)
|
2000-06-29 |
2002-10-22 |
Applied Materials, Inc. |
Abatement of fluorine gas from effluent
|
|
US6334266B1
(en)
|
1999-09-20 |
2002-01-01 |
S.C. Fluids, Inc. |
Supercritical fluid drying system and method of use
|
|
US6612317B2
(en)
|
2000-04-18 |
2003-09-02 |
S.C. Fluids, Inc |
Supercritical fluid delivery and recovery system for semiconductor wafer processing
|
|
DE69940114D1
(de)
|
1999-08-17 |
2009-01-29 |
Applied Materials Inc |
Oberflächenbehandlung von kohlenstoffdotierten SiO2-Filmen zur Erhöhung der Stabilität während der O2-Veraschung
|
|
US6299753B1
(en)
|
1999-09-01 |
2001-10-09 |
Applied Materials, Inc. |
Double pressure vessel chemical dispenser unit
|
|
US6511539B1
(en)
|
1999-09-08 |
2003-01-28 |
Asm America, Inc. |
Apparatus and method for growth of a thin film
|
|
JP2001110729A
(ja)
|
1999-10-06 |
2001-04-20 |
Mitsubishi Heavy Ind Ltd |
半導体素子の連続製造装置
|
|
FI117942B
(fi)
|
1999-10-14 |
2007-04-30 |
Asm Int |
Menetelmä oksidiohutkalvojen kasvattamiseksi
|
|
KR100304714B1
(ko)
|
1999-10-20 |
2001-11-02 |
윤종용 |
금속 할로겐 가스를 사용한 반도체 소자의 금속 박막 형성방법
|
|
US20030148631A1
(en)
|
1999-11-08 |
2003-08-07 |
Taiwan Semiconductor Manufacturing Company |
Oxidative annealing method for forming etched spin-on-glass (SOG) planarizing layer with uniform etch profile
|
|
US6500603B1
(en)
|
1999-11-11 |
2002-12-31 |
Mitsui Chemicals, Inc. |
Method for manufacturing polymer optical waveguide
|
|
KR100321561B1
(ko)
|
1999-11-16 |
2002-01-23 |
박호군 |
휘발 성분이 포함된 다성분 산화물 강유전체 박막의 제조방법
|
|
US6399486B1
(en)
|
1999-11-22 |
2002-06-04 |
Taiwan Semiconductor Manufacturing Company |
Method of improved copper gap fill
|
|
TW484170B
(en)
|
1999-11-30 |
2002-04-21 |
Applied Materials Inc |
Integrated modular processing platform
|
|
US6344419B1
(en)
|
1999-12-03 |
2002-02-05 |
Applied Materials, Inc. |
Pulsed-mode RF bias for sidewall coverage improvement
|
|
US6969448B1
(en)
|
1999-12-30 |
2005-11-29 |
Cypress Semiconductor Corp. |
Method for forming a metallization structure in an integrated circuit
|
|
US6150286A
(en)
|
2000-01-03 |
2000-11-21 |
Advanced Micro Devices, Inc. |
Method of making an ultra thin silicon nitride film
|
|
FI20000099A0
(fi)
|
2000-01-18 |
2000-01-18 |
Asm Microchemistry Ltd |
Menetelmä metalliohutkalvojen kasvattamiseksi
|
|
US6541367B1
(en)
|
2000-01-18 |
2003-04-01 |
Applied Materials, Inc. |
Very low dielectric constant plasma-enhanced CVD films
|
|
US6277249B1
(en)
|
2000-01-21 |
2001-08-21 |
Applied Materials Inc. |
Integrated process for copper via filling using a magnetron and target producing highly energetic ions
|
|
US6251242B1
(en)
|
2000-01-21 |
2001-06-26 |
Applied Materials, Inc. |
Magnetron and target producing an extended plasma region in a sputter reactor
|
|
US6319766B1
(en)
|
2000-02-22 |
2001-11-20 |
Applied Materials, Inc. |
Method of tantalum nitride deposition by tantalum oxide densification
|
|
JP2001250787A
(ja)
|
2000-03-06 |
2001-09-14 |
Hitachi Kokusai Electric Inc |
基板処理装置および基板処理方法
|
|
JP5016767B2
(ja)
|
2000-03-07 |
2012-09-05 |
エーエスエム インターナショナル エヌ．ヴェー． |
傾斜薄膜の形成方法
|
|
US6506653B1
(en)
|
2000-03-13 |
2003-01-14 |
International Business Machines Corporation |
Method using disposable and permanent films for diffusion and implant doping
|
|
JP4637989B2
(ja)
|
2000-03-24 |
2011-02-23 |
株式会社神戸製鋼所 |
半導体配線膜の形成方法
|
|
FI117979B
(fi)
|
2000-04-14 |
2007-05-15 |
Asm Int |
Menetelmä oksidiohutkalvojen valmistamiseksi
|
|
US20040025908A1
(en)
|
2000-04-18 |
2004-02-12 |
Stephen Douglas |
Supercritical fluid delivery system for semiconductor wafer processing
|
|
KR100363088B1
(ko)
|
2000-04-20 |
2002-12-02 |
삼성전자 주식회사 |
원자층 증착방법을 이용한 장벽 금속막의 제조방법
|
|
US6482733B2
(en)
|
2000-05-15 |
2002-11-19 |
Asm Microchemistry Oy |
Protective layers prior to alternating layer deposition
|
|
WO2001088972A1
(en)
|
2000-05-15 |
2001-11-22 |
Asm Microchemistry Oy |
Process for producing integrated circuits
|
|
US6921722B2
(en)
|
2000-05-30 |
2005-07-26 |
Ebara Corporation |
Coating, modification and etching of substrate surface with particle beam irradiation of the same
|
|
US6620723B1
(en)
|
2000-06-27 |
2003-09-16 |
Applied Materials, Inc. |
Formation of boride barrier layers using chemisorption techniques
|
|
US6551929B1
(en)
|
2000-06-28 |
2003-04-22 |
Applied Materials, Inc. |
Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
|
|
US7964505B2
(en)
|
2005-01-19 |
2011-06-21 |
Applied Materials, Inc. |
Atomic layer deposition of tungsten materials
|
|
US6585823B1
(en)
|
2000-07-07 |
2003-07-01 |
Asm International, N.V. |
Atomic layer deposition
|
|
US7166524B2
(en)
|
2000-08-11 |
2007-01-23 |
Applied Materials, Inc. |
Method for ion implanting insulator material to reduce dielectric constant
|
|
US6660660B2
(en)
|
2000-10-10 |
2003-12-09 |
Asm International, Nv. |
Methods for making a dielectric stack in an integrated circuit
|
|
KR100385947B1
(ko)
|
2000-12-06 |
2003-06-02 |
삼성전자주식회사 |
원자층 증착 방법에 의한 박막 형성 방법
|
|
US6428859B1
(en)
|
2000-12-06 |
2002-08-06 |
Angstron Systems, Inc. |
Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
|
|
US6416822B1
(en)
|
2000-12-06 |
2002-07-09 |
Angstrom Systems, Inc. |
Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
|
|
US6630201B2
(en)
|
2001-04-05 |
2003-10-07 |
Angstron Systems, Inc. |
Adsorption process for atomic layer deposition
|
|
US6464779B1
(en)
|
2001-01-19 |
2002-10-15 |
Novellus Systems, Inc. |
Copper atomic layer chemical vapor desposition
|
|
US6852167B2
(en)
|
2001-03-01 |
2005-02-08 |
Micron Technology, Inc. |
Methods, systems, and apparatus for uniform chemical-vapor depositions
|
|
US6797336B2
(en)
|
2001-03-22 |
2004-09-28 |
Ambp Tech Corporation |
Multi-component substances and processes for preparation thereof
|
|
JP4335469B2
(ja)
|
2001-03-22 |
2009-09-30 |
株式会社荏原製作所 |
真空排気装置のガス循環量調整方法及び装置
|
|
TW544797B
(en)
|
2001-04-17 |
2003-08-01 |
Kobe Steel Ltd |
High-pressure processing apparatus
|
|
JP2002319571A
(ja)
|
2001-04-20 |
2002-10-31 |
Kawasaki Microelectronics Kk |
エッチング槽の前処理方法及び半導体装置の製造方法
|
|
US7080651B2
(en)
|
2001-05-17 |
2006-07-25 |
Dainippon Screen Mfg. Co., Ltd. |
High pressure processing apparatus and method
|
|
KR100433846B1
(ko)
|
2001-05-23 |
2004-06-04 |
주식회사 하이닉스반도체 |
반도체장치의 금속도전막 형성방법
|
|
US6752585B2
(en)
|
2001-06-13 |
2004-06-22 |
Applied Materials Inc |
Method and apparatus for transferring a semiconductor substrate
|
|
EP1271636A1
(en)
|
2001-06-22 |
2003-01-02 |
Infineon Technologies AG |
Thermal oxidation process control by controlling oxidation agent partial pressure
|
|
JP4358486B2
(ja)
*
|
2001-07-25 |
2009-11-04 |
大日本スクリーン製造株式会社 |
高圧処理装置および高圧処理方法
|
|
US9051641B2
(en)
|
2001-07-25 |
2015-06-09 |
Applied Materials, Inc. |
Cobalt deposition on barrier surfaces
|
|
US20030029715A1
(en)
|
2001-07-25 |
2003-02-13 |
Applied Materials, Inc. |
An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
|
|
US20080268635A1
(en)
|
2001-07-25 |
2008-10-30 |
Sang-Ho Yu |
Process for forming cobalt and cobalt silicide materials in copper contact applications
|
|
JP2003051474A
(ja)
|
2001-08-03 |
2003-02-21 |
Kobe Steel Ltd |
高圧処理装置
|
|
US6889627B1
(en)
|
2001-08-08 |
2005-05-10 |
Lam Research Corporation |
Symmetrical semiconductor reactor
|
|
US6531412B2
(en)
|
2001-08-10 |
2003-03-11 |
International Business Machines Corporation |
Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
|
|
US6781801B2
(en)
|
2001-08-10 |
2004-08-24 |
Seagate Technology Llc |
Tunneling magnetoresistive sensor with spin polarized current injection
|
|
JP2003077974A
(ja)
|
2001-08-31 |
2003-03-14 |
Hitachi Kokusai Electric Inc |
基板処理装置および半導体装置の製造方法
|
|
US6619304B2
(en)
|
2001-09-13 |
2003-09-16 |
Micell Technologies, Inc. |
Pressure chamber assembly including non-mechanical drive means
|
|
US6607976B2
(en)
|
2001-09-25 |
2003-08-19 |
Applied Materials, Inc. |
Copper interconnect barrier layer structure and formation method
|
|
US20030059538A1
(en)
|
2001-09-26 |
2003-03-27 |
Applied Materials, Inc. |
Integration of barrier layer and seed layer
|
|
US7105061B1
(en)
|
2001-11-07 |
2006-09-12 |
Novellus Systems, Inc. |
Method and apparatus for sealing substrate load port in a high pressure reactor
|
|
US6620956B2
(en)
|
2001-11-16 |
2003-09-16 |
Applied Materials, Inc. |
Nitrogen analogs of copper II β-diketonates as source reagents for semiconductor processing
|
|
US20030098069A1
(en)
|
2001-11-26 |
2003-05-29 |
Sund Wesley E. |
High purity fluid delivery system
|
|
JP2003166065A
(ja)
|
2001-11-30 |
2003-06-13 |
Sekisui Chem Co Ltd |
放電プラズマ処理装置
|
|
JP2003188387A
(ja)
|
2001-12-20 |
2003-07-04 |
Sony Corp |
薄膜トランジスタ及びその製造方法
|
|
KR100450564B1
(ko)
|
2001-12-20 |
2004-09-30 |
동부전자 주식회사 |
반도체 소자의 금속 배선 후처리 방법
|
|
US6939801B2
(en)
|
2001-12-21 |
2005-09-06 |
Applied Materials, Inc. |
Selective deposition of a barrier layer on a dielectric material
|
|
US6620670B2
(en)
|
2002-01-18 |
2003-09-16 |
Applied Materials, Inc. |
Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
|
|
US6848458B1
(en)
|
2002-02-05 |
2005-02-01 |
Novellus Systems, Inc. |
Apparatus and methods for processing semiconductor substrates using supercritical fluids
|
|
US6632325B2
(en)
|
2002-02-07 |
2003-10-14 |
Applied Materials, Inc. |
Article for use in a semiconductor processing chamber and method of fabricating same
|
|
US6835503B2
(en)
|
2002-04-12 |
2004-12-28 |
Micron Technology, Inc. |
Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks
|
|
US7279432B2
(en)
|
2002-04-16 |
2007-10-09 |
Applied Materials, Inc. |
System and method for forming an integrated barrier layer
|
|
US7589029B2
(en)
|
2002-05-02 |
2009-09-15 |
Micron Technology, Inc. |
Atomic layer deposition and conversion
|
|
US7638727B2
(en)
|
2002-05-08 |
2009-12-29 |
Btu International Inc. |
Plasma-assisted heat treatment
|
|
US7910165B2
(en)
|
2002-06-04 |
2011-03-22 |
Applied Materials, Inc. |
Ruthenium layer formation for copper film deposition
|
|
US6657304B1
(en)
|
2002-06-06 |
2003-12-02 |
Advanced Micro Devices, Inc. |
Conformal barrier liner in an integrated circuit interconnect
|
|
US7521089B2
(en)
|
2002-06-13 |
2009-04-21 |
Tokyo Electron Limited |
Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers
|
|
US6846380B2
(en)
|
2002-06-13 |
2005-01-25 |
The Boc Group, Inc. |
Substrate processing apparatus and related systems and methods
|
|
US20070243317A1
(en)
|
2002-07-15 |
2007-10-18 |
Du Bois Dale R |
Thermal Processing System and Configurable Vertical Chamber
|
|
US20070212850A1
(en)
|
2002-09-19 |
2007-09-13 |
Applied Materials, Inc. |
Gap-fill depositions in the formation of silicon containing dielectric materials
|
|
US7335609B2
(en)
|
2004-08-27 |
2008-02-26 |
Applied Materials, Inc. |
Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
|
|
WO2004032189A2
(en)
|
2002-09-30 |
2004-04-15 |
Miasolé |
Manufacturing apparatus and method for large-scale production of thin-film solar cells
|
|
JP2004127958A
(ja)
|
2002-09-30 |
2004-04-22 |
Kyoshin Engineering:Kk |
高圧アニール水蒸気処理を行なう装置及び方法
|
|
US20040060519A1
(en)
|
2002-10-01 |
2004-04-01 |
Seh America Inc. |
Quartz to quartz seal using expanded PTFE gasket material
|
|
US6889508B2
(en)
*
|
2002-10-02 |
2005-05-10 |
The Boc Group, Inc. |
High pressure CO2 purification and supply system
|
|
US7270761B2
(en)
|
2002-10-18 |
2007-09-18 |
Appleid Materials, Inc |
Fluorine free integrated process for etching aluminum including chamber dry clean
|
|
KR100480634B1
(ko)
|
2002-11-19 |
2005-03-31 |
삼성전자주식회사 |
니켈 살리사이드 공정을 이용한 반도체 소자의 제조방법
|
|
WO2004049414A1
(ja)
|
2002-11-25 |
2004-06-10 |
Koyo Thermo Systems Co., Ltd. |
半導体処理装置用電気ヒータ
|
|
US20040112409A1
(en)
|
2002-12-16 |
2004-06-17 |
Supercritical Sysems, Inc. |
Fluoride in supercritical fluid for photoresist and residue removal
|
|
US6825115B1
(en)
|
2003-01-14 |
2004-11-30 |
Advanced Micro Devices, Inc. |
Post silicide laser thermal annealing to avoid dopant deactivation
|
|
EP1597752A2
(en)
|
2003-02-04 |
2005-11-23 |
Applied Materials, Inc. |
Tailoring nitrogen profile in silicon oxynitride using rapid thermal annealing with ammonia under ultra-low pressure
|
|
JP3956049B2
(ja)
|
2003-03-07 |
2007-08-08 |
東京エレクトロン株式会社 |
タングステン膜の形成方法
|
|
US6809005B2
(en)
|
2003-03-12 |
2004-10-26 |
Infineon Technologies Ag |
Method to fill deep trench structures with void-free polysilicon or silicon
|
|
US7079760B2
(en)
|
2003-03-17 |
2006-07-18 |
Tokyo Electron Limited |
Processing system and method for thermally treating a substrate
|
|
KR100914087B1
(ko)
|
2003-05-13 |
2009-08-27 |
어플라이드 머티어리얼스, 인코포레이티드 |
처리 챔버의 개구를 밀봉하기 위한 방법 및 장치
|
|
US6867130B1
(en)
|
2003-05-28 |
2005-03-15 |
Advanced Micro Devices, Inc. |
Enhanced silicidation of polysilicon gate electrodes
|
|
US6939794B2
(en)
|
2003-06-17 |
2005-09-06 |
Micron Technology, Inc. |
Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device
|
|
US7226512B2
(en)
|
2003-06-18 |
2007-06-05 |
Ekc Technology, Inc. |
Load lock system for supercritical fluid cleaning
|
|
US20070012402A1
(en)
|
2003-07-08 |
2007-01-18 |
Sundew Technologies, Llc |
Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
|
|
KR100539274B1
(ko)
|
2003-07-15 |
2005-12-27 |
삼성전자주식회사 |
코발트 막 증착 방법
|
|
JP4417669B2
(ja)
|
2003-07-28 |
2010-02-17 |
日本エー・エス・エム株式会社 |
半導体処理装置および半導体ウエハーの導入方法
|
|
JP4173781B2
(ja)
|
2003-08-13 |
2008-10-29 |
株式会社神戸製鋼所 |
高圧処理方法
|
|
JP4443879B2
(ja)
|
2003-09-03 |
2010-03-31 |
株式会社協真エンジニアリング |
高精度高圧アニール装置
|
|
US7029966B2
(en)
|
2003-09-18 |
2006-04-18 |
International Business Machines Corporation |
Process options of forming silicided metal gates for advanced CMOS devices
|
|
US6867152B1
(en)
|
2003-09-26 |
2005-03-15 |
Novellus Systems, Inc. |
Properties of a silica thin film produced by a rapid vapor deposition (RVD) process
|
|
US7109087B2
(en)
|
2003-10-03 |
2006-09-19 |
Applied Materials, Inc. |
Absorber layer for DSA processing
|
|
US20070111519A1
(en)
|
2003-10-15 |
2007-05-17 |
Applied Materials, Inc. |
Integrated electroless deposition system
|
|
WO2005057663A2
(en)
|
2003-12-10 |
2005-06-23 |
Koninklijke Philips Electronics N.V. |
Method and apparatus for fabrication of metal-oxide semiconductor integrated circuit devices
|
|
US20050136684A1
(en)
|
2003-12-23 |
2005-06-23 |
Applied Materials, Inc. |
Gap-fill techniques
|
|
TW200527491A
(en)
|
2003-12-23 |
2005-08-16 |
John C Schumacher |
Exhaust conditioning system for semiconductor reactor
|
|
US7158221B2
(en)
|
2003-12-23 |
2007-01-02 |
Applied Materials, Inc. |
Method and apparatus for performing limited area spectral analysis
|
|
US20050250347A1
(en)
|
2003-12-31 |
2005-11-10 |
Bailey Christopher M |
Method and apparatus for maintaining by-product volatility in deposition process
|
|
US20050205210A1
(en)
|
2004-01-06 |
2005-09-22 |
Devine Daniel J |
Advanced multi-pressure workpiece processing
|
|
US7030468B2
(en)
|
2004-01-16 |
2006-04-18 |
International Business Machines Corporation |
Low k and ultra low k SiCOH dielectric films and methods to form the same
|
|
US7037816B2
(en)
|
2004-01-23 |
2006-05-02 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
System and method for integration of HfO2 and RTCVD poly-silicon
|
|
US6897118B1
(en)
|
2004-02-11 |
2005-05-24 |
Chartered Semiconductor Manufacturing Ltd. |
Method of multiple pulse laser annealing to activate ultra-shallow junctions
|
|
US20050187647A1
(en)
|
2004-02-19 |
2005-08-25 |
Kuo-Hua Wang |
Intelligent full automation controlled flow for a semiconductor furnace tool
|
|
US7078302B2
(en)
|
2004-02-23 |
2006-07-18 |
Applied Materials, Inc. |
Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal
|
|
US7030016B2
(en)
|
2004-03-30 |
2006-04-18 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Post ECP multi-step anneal/H2 treatment to reduce film impurity
|
|
JP4393268B2
(ja)
|
2004-05-20 |
2010-01-06 |
株式会社神戸製鋼所 |
微細構造体の乾燥方法
|
|
US20050269291A1
(en)
|
2004-06-04 |
2005-12-08 |
Tokyo Electron Limited |
Method of operating a processing system for treating a substrate
|
|
US7268065B2
(en)
|
2004-06-18 |
2007-09-11 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Methods of manufacturing metal-silicide features
|
|
US7521378B2
(en)
|
2004-07-01 |
2009-04-21 |
Micron Technology, Inc. |
Low temperature process for polysilazane oxidation/densification
|
|
TWI267183B
(en)
|
2004-09-29 |
2006-11-21 |
Sanyo Electric Co |
Semiconductor device and manufacturing method of the same
|
|
US7439168B2
(en)
|
2004-10-12 |
2008-10-21 |
Dcg Systems, Inc |
Apparatus and method of forming silicide in a localized manner
|
|
US7491658B2
(en)
|
2004-10-13 |
2009-02-17 |
International Business Machines Corporation |
Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
|
|
US7427571B2
(en)
|
2004-10-15 |
2008-09-23 |
Asm International, N.V. |
Reactor design for reduced particulate generation
|
|
US8585873B2
(en)
|
2004-10-16 |
2013-11-19 |
Aviza Technology Limited |
Methods and apparatus for sputtering
|
|
US20060091493A1
(en)
|
2004-11-01 |
2006-05-04 |
Silicon-Based Technology Corp. |
LOCOS Schottky barrier contact structure and its manufacturing method
|
|
JP2006135161A
(ja)
|
2004-11-08 |
2006-05-25 |
Canon Inc |
絶縁膜の形成方法及び装置
|
|
US7235472B2
(en)
|
2004-11-12 |
2007-06-26 |
Infineon Technologies Ag |
Method of making fully silicided gate electrode
|
|
US20060156979A1
(en)
|
2004-11-22 |
2006-07-20 |
Applied Materials, Inc. |
Substrate processing apparatus using a batch processing chamber
|
|
US7429402B2
(en)
|
2004-12-10 |
2008-09-30 |
Applied Materials, Inc. |
Ruthenium as an underlayer for tungsten film deposition
|
|
US20060240187A1
(en)
|
2005-01-27 |
2006-10-26 |
Applied Materials, Inc. |
Deposition of an intermediate catalytic layer on a barrier layer for copper metallization
|
|
KR100697280B1
(ko)
|
2005-02-07 |
2007-03-20 |
삼성전자주식회사 |
반도체 제조 설비의 압력 조절 방법
|
|
CN101128622B
(zh)
|
2005-02-22 |
2010-08-25 |
埃克提斯公司 |
具有副腔的蚀刻腔
|
|
US7211525B1
(en)
|
2005-03-16 |
2007-05-01 |
Novellus Systems, Inc. |
Hydrogen treatment enhanced gap fill
|
|
JPWO2006098101A1
(ja)
|
2005-03-16 |
2008-08-21 |
日本電気株式会社 |
金属材料、金属材料を用いた半導体集積回路用配線および被覆膜
|
|
WO2006101315A1
(en)
|
2005-03-21 |
2006-09-28 |
Pkl Co., Ltd. |
Device and method for cleaning photomask
|
|
US20060226117A1
(en)
|
2005-03-29 |
2006-10-12 |
Bertram Ronald T |
Phase change based heating element system and method
|
|
US7465650B2
(en)
|
2005-04-14 |
2008-12-16 |
Micron Technology, Inc. |
Methods of forming polysilicon-comprising plugs and methods of forming FLASH memory circuitry
|
|
US20120060868A1
(en)
*
|
2005-06-07 |
2012-03-15 |
Donald Gray |
Microscale fluid delivery system
|
|
EP1731962B1
(en)
|
2005-06-10 |
2008-12-31 |
Obducat AB |
Pattern replication with intermediate stamp
|
|
JP4747693B2
(ja)
|
2005-06-28 |
2011-08-17 |
住友電気工業株式会社 |
樹脂体を形成する方法、光導波路のための構造を形成する方法、および光学部品を形成する方法
|
|
US7361231B2
(en)
*
|
2005-07-01 |
2008-04-22 |
Ekc Technology, Inc. |
System and method for mid-pressure dense phase gas and ultrasonic cleaning
|
|
US8148271B2
(en)
|
2005-08-05 |
2012-04-03 |
Hitachi Kokusai Electric Inc. |
Substrate processing apparatus, coolant gas supply nozzle and semiconductor device manufacturing method
|
|
US7534080B2
(en)
|
2005-08-26 |
2009-05-19 |
Ascentool, Inc. |
Vacuum processing and transfer system
|
|
US7531404B2
(en)
|
2005-08-30 |
2009-05-12 |
Intel Corporation |
Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer
|
|
US8926731B2
(en)
|
2005-09-13 |
2015-01-06 |
Rasirc |
Methods and devices for producing high purity steam
|
|
KR100696178B1
(ko)
|
2005-09-13 |
2007-03-20 |
한국전자통신연구원 |
광 도파로 마스터 및 그 제조 방법
|
|
US8027089B2
(en)
|
2005-10-07 |
2011-09-27 |
Nikon Corporation |
Minute structure and its manufacturing method
|
|
US7794667B2
(en)
|
2005-10-19 |
2010-09-14 |
Moore Epitaxial, Inc. |
Gas ring and method of processing substrates
|
|
US8460519B2
(en)
|
2005-10-28 |
2013-06-11 |
Applied Materials Inc. |
Protective offset sputtering
|
|
US7387968B2
(en)
|
2005-11-08 |
2008-06-17 |
Tokyo Electron Limited |
Batch photoresist dry strip and ash system and process
|
|
US20070116873A1
(en)
|
2005-11-18 |
2007-05-24 |
Tokyo Electron Limited |
Apparatus for thermal and plasma enhanced vapor deposition and method of operating
|
|
WO2007058605A1
(en)
|
2005-11-18 |
2007-05-24 |
Replisaurus Technologies Ab |
Master electrode and method of forming it
|
|
US8306026B2
(en)
|
2005-12-15 |
2012-11-06 |
Toshiba America Research, Inc. |
Last hop topology sensitive multicasting key management
|
|
US7432200B2
(en)
|
2005-12-15 |
2008-10-07 |
Intel Corporation |
Filling narrow and high aspect ratio openings using electroless deposition
|
|
JP2007180310A
(ja)
|
2005-12-28 |
2007-07-12 |
Toshiba Corp |
半導体装置
|
|
KR100684910B1
(ko)
|
2006-02-02 |
2007-02-22 |
삼성전자주식회사 |
플라즈마 처리 장치 및 그의 클리닝 방법
|
|
US20070187386A1
(en)
|
2006-02-10 |
2007-08-16 |
Poongsan Microtec Corporation |
Methods and apparatuses for high pressure gas annealing
|
|
US7578258B2
(en)
|
2006-03-03 |
2009-08-25 |
Lam Research Corporation |
Methods and apparatus for selective pre-coating of a plasma processing chamber
|
|
JP2007242791A
(ja)
|
2006-03-07 |
2007-09-20 |
Hitachi Kokusai Electric Inc |
基板処理装置
|
|
US7520969B2
(en)
|
2006-03-07 |
2009-04-21 |
Applied Materials, Inc. |
Notched deposition ring
|
|
TW200746268A
(en)
|
2006-04-11 |
2007-12-16 |
Applied Materials Inc |
Process for forming cobalt-containing materials
|
|
JP4983087B2
(ja)
|
2006-04-27 |
2012-07-25 |
富士通セミコンダクター株式会社 |
成膜方法、半導体装置の製造方法、コンピュータ可読記録媒体、スパッタ処理装置
|
|
WO2007133595A2
(en)
|
2006-05-08 |
2007-11-22 |
The Board Of Trustees Of The University Of Illinois |
Integrated vacuum absorption steam cycle gas separation
|
|
US7825038B2
(en)
|
2006-05-30 |
2010-11-02 |
Applied Materials, Inc. |
Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
|
|
US7650965B2
(en)
|
2006-06-09 |
2010-01-26 |
Emcon Technologies Llc |
Exhaust system
|
|
US7709320B2
(en)
|
2006-06-28 |
2010-05-04 |
International Business Machines Corporation |
Method of fabricating trench capacitors and memory cells using trench capacitors
|
|
JP2008073611A
(ja)
|
2006-09-21 |
2008-04-03 |
Dainippon Screen Mfg Co Ltd |
高圧処理装置
|
|
US7494891B2
(en)
|
2006-09-21 |
2009-02-24 |
International Business Machines Corporation |
Trench capacitor with void-free conductor fill
|
|
JP4976796B2
(ja)
|
2006-09-25 |
2012-07-18 |
株式会社東芝 |
半導体装置
|
|
JP4814038B2
(ja)
|
2006-09-25 |
2011-11-09 |
株式会社日立国際電気 |
基板処理装置および反応容器の着脱方法
|
|
US7521379B2
(en)
|
2006-10-09 |
2009-04-21 |
Applied Materials, Inc. |
Deposition and densification process for titanium nitride barrier layers
|
|
TW200830034A
(en)
|
2006-10-13 |
2008-07-16 |
Asahi Glass Co Ltd |
Method of smoothing surface of substrate for EUV mask blank, and EUV mask blank obtained by the method
|
|
JP2008118118A
(ja)
|
2006-10-13 |
2008-05-22 |
Asahi Glass Co Ltd |
Ｅｕｖマスクブランク用の基板表面を平滑化する方法、および該方法により得られるｅｕｖマスクブランク
|
|
US7888273B1
(en)
|
2006-11-01 |
2011-02-15 |
Novellus Systems, Inc. |
Density gradient-free gap fill
|
|
US7790587B2
(en)
|
2006-11-07 |
2010-09-07 |
Intel Corporation |
Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby
|
|
JP2008153635A
(ja)
|
2006-11-22 |
2008-07-03 |
Toshiba Matsushita Display Technology Co Ltd |
Ｍｏｓ型半導体素子の製造方法
|
|
JP5200371B2
(ja)
|
2006-12-01 |
2013-06-05 |
東京エレクトロン株式会社 |
成膜方法、半導体装置及び記憶媒体
|
|
US20080132050A1
(en)
|
2006-12-05 |
2008-06-05 |
Lavoie Adrien R |
Deposition process for graded cobalt barrier layers
|
|
US20080169183A1
(en)
|
2007-01-16 |
2008-07-17 |
Varian Semiconductor Equipment Associates, Inc. |
Plasma Source with Liner for Reducing Metal Contamination
|
|
JP2008192642A
(ja)
|
2007-01-31 |
2008-08-21 |
Tokyo Electron Ltd |
基板処理装置
|
|
US20080233404A1
(en)
|
2007-03-22 |
2008-09-25 |
3M Innovative Properties Company |
Microreplication tools and patterns using laser induced thermal embossing
|
|
JP5135856B2
(ja)
|
2007-03-31 |
2013-02-06 |
東京エレクトロン株式会社 |
トラップ装置、排気系及びこれを用いた処理システム
|
|
US20080241384A1
(en)
|
2007-04-02 |
2008-10-02 |
Asm Genitech Korea Ltd. |
Lateral flow deposition apparatus and method of depositing film by using the apparatus
|
|
DE102007017641A1
(de)
|
2007-04-13 |
2008-10-16 |
Infineon Technologies Ag |
Aushärtung von Schichten am Halbleitermodul mittels elektromagnetischer Felder
|
|
JP2010525530A
(ja)
|
2007-04-30 |
2010-07-22 |
アイファイアー・アイピー・コーポレーション |
厚膜誘電性エレクトロルミネセントディスプレイ用の積層厚膜誘電体構造
|
|
WO2008147522A1
(en)
|
2007-05-25 |
2008-12-04 |
Applied Materials, Inc. |
Methods and apparatus for assembling and operating electronic device manufacturing systems
|
|
US20080311711A1
(en)
|
2007-06-13 |
2008-12-18 |
Roland Hampp |
Gapfill for metal contacts
|
|
US20090018688A1
(en)
|
2007-06-15 |
2009-01-15 |
Applied Materials, Inc. |
Methods and systems for designing and validating operation of abatement systems
|
|
KR101442238B1
(ko)
|
2007-07-26 |
2014-09-23 |
주식회사 풍산마이크로텍 |
고압 산소 열처리를 통한 반도체 소자의 제조방법
|
|
US7645709B2
(en)
|
2007-07-30 |
2010-01-12 |
Applied Materials, Inc. |
Methods for low temperature oxidation of a semiconductor device
|
|
US7763522B2
(en)
|
2007-08-01 |
2010-07-27 |
United Microelectronic Corp. |
Method of high density plasma gap-filling with minimization of gas phase nucleation
|
|
US8648253B1
(en)
|
2010-10-01 |
2014-02-11 |
Ascent Solar Technologies, Inc. |
Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers
|
|
US7951728B2
(en)
|
2007-09-24 |
2011-05-31 |
Applied Materials, Inc. |
Method of improving oxide growth rate of selective oxidation processes
|
|
US7884012B2
(en)
|
2007-09-28 |
2011-02-08 |
Tokyo Electron Limited |
Void-free copper filling of recessed features for semiconductor devices
|
|
US7541297B2
(en)
|
2007-10-22 |
2009-06-02 |
Applied Materials, Inc. |
Method and system for improving dielectric film quality for void free gap fill
|
|
US7867923B2
(en)
|
2007-10-22 |
2011-01-11 |
Applied Materials, Inc. |
High quality silicon oxide films by remote plasma CVD from disilane precursors
|
|
US7803722B2
(en)
|
2007-10-22 |
2010-09-28 |
Applied Materials, Inc |
Methods for forming a dielectric layer within trenches
|
|
WO2009055750A1
(en)
|
2007-10-26 |
2009-04-30 |
Applied Materials, Inc. |
Methods and apparatus for smart abatement using an improved fuel circuit
|
|
JP5299605B2
(ja)
|
2007-11-19 |
2013-09-25 |
日揮触媒化成株式会社 |
低誘電率シリカ系被膜のダメージ修復方法および該方法により修復された低誘電率シリカ系被膜
|
|
US7651959B2
(en)
|
2007-12-03 |
2010-01-26 |
Asm Japan K.K. |
Method for forming silazane-based dielectric film
|
|
KR20090064279A
(ko)
|
2007-12-14 |
2009-06-18 |
노벨러스 시스템즈, 인코포레이티드 |
손상 없는 갭 충진을 위한 보호 층
|
|
US7776740B2
(en)
|
2008-01-22 |
2010-08-17 |
Tokyo Electron Limited |
Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
|
|
US7843063B2
(en)
|
2008-02-14 |
2010-11-30 |
International Business Machines Corporation |
Microstructure modification in copper interconnect structure
|
|
US7964506B1
(en)
|
2008-03-06 |
2011-06-21 |
Novellus Systems, Inc. |
Two step copper electroplating process with anneal for uniform across wafer deposition and void free filling on ruthenium coated wafers
|
|
US20090246952A1
(en)
|
2008-03-28 |
2009-10-01 |
Tokyo Electron Limited |
Method of forming a cobalt metal nitride barrier film
|
|
JP4815464B2
(ja)
|
2008-03-31 |
2011-11-16 |
株式会社日立製作所 |
微細構造転写スタンパ及び微細構造転写装置
|
|
JP2009262016A
(ja)
*
|
2008-04-23 |
2009-11-12 |
Sharp Corp |
二酸化炭素の分離方法および分離装置ならびに洗浄装置
|
|
US20090269507A1
(en)
|
2008-04-29 |
2009-10-29 |
Sang-Ho Yu |
Selective cobalt deposition on copper surfaces
|
|
EP3573092B1
(en)
|
2008-05-02 |
2021-12-22 |
Applied Materials, Inc. |
System for non radial temperature control for rotating substrates
|
|
US8133793B2
(en)
|
2008-05-16 |
2012-03-13 |
Sandisk 3D Llc |
Carbon nano-film reversible resistance-switchable elements and methods of forming the same
|
|
US7622369B1
(en)
|
2008-05-30 |
2009-11-24 |
Asm Japan K.K. |
Device isolation technology on semiconductor substrate
|
|
US7655532B1
(en)
|
2008-07-25 |
2010-02-02 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
STI film property using SOD post-treatment
|
|
US8945981B2
(en)
|
2008-07-31 |
2015-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP2010080949A
(ja)
|
2008-08-29 |
2010-04-08 |
Kisco Ltd |
銅膜のアニール方法、アニールされた銅配線およびこの銅配線を有するデバイス
|
|
US20100089315A1
(en)
|
2008-09-22 |
2010-04-15 |
Applied Materials, Inc. |
Shutter disk for physical vapor deposition chamber
|
|
US8153533B2
(en)
|
2008-09-24 |
2012-04-10 |
Lam Research |
Methods and systems for preventing feature collapse during microelectronic topography fabrication
|
|
KR20100035000A
(ko)
|
2008-09-25 |
2010-04-02 |
삼성전자주식회사 |
서로 다른 종횡비를 갖는 소자 분리 트렌치 갭필 방법 및 그를 이용한 반도체 소자
|
|
WO2010062582A2
(en)
|
2008-10-27 |
2010-06-03 |
Applied Materials, Inc. |
Vapor deposition method for ternary compounds
|
|
US7891228B2
(en)
|
2008-11-18 |
2011-02-22 |
Mks Instruments, Inc. |
Dual-mode mass flow verification and mass flow delivery system and method
|
|
US8557712B1
(en)
|
2008-12-15 |
2013-10-15 |
Novellus Systems, Inc. |
PECVD flowable dielectric gap fill
|
|
KR20100082170A
(ko)
|
2009-01-08 |
2010-07-16 |
삼성전자주식회사 |
실리콘 산화막 패턴 및 소자 분리막 형성 방법
|
|
JP2010168607A
(ja)
|
2009-01-21 |
2010-08-05 |
Institute Of National Colleges Of Technology Japan |
組成比制御が可能な対向ターゲット式スパッタ装置
|
|
JP5883652B2
(ja)
|
2009-02-04 |
2016-03-15 |
アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ |
プラズマ処理チャンバのための高周波リターンデバイスおよびプラズマ処理システム
|
|
KR101534678B1
(ko)
|
2009-02-12 |
2015-07-08 |
삼성전자주식회사 |
텅스텐 콘택 플러그를 산소 분위기에서 ｒｔａ 처리하고, ｒｔｏ 처리된 텅스텐 플러그를 수소 분위기에서 환원시키는 반도체 소자의 제조방법
|
|
EP2396823A4
(en)
|
2009-02-15 |
2013-09-11 |
Jacob Woodruff |
FROM BALANCE WEIGHER (N) SHAPED SOLAR CELL ABSORPTION LAYER
|
|
JP2010205854A
(ja)
|
2009-03-02 |
2010-09-16 |
Fujitsu Semiconductor Ltd |
半導体装置の製造方法
|
|
JP4564570B2
(ja)
|
2009-03-10 |
2010-10-20 |
三井造船株式会社 |
原子層堆積装置
|
|
JP4523661B1
(ja)
|
2009-03-10 |
2010-08-11 |
三井造船株式会社 |
原子層堆積装置及び薄膜形成方法
|
|
US8435830B2
(en)
|
2009-03-18 |
2013-05-07 |
Samsung Electronics Co., Ltd. |
Methods of fabricating semiconductor devices
|
|
FR2944147B1
(fr)
|
2009-04-02 |
2011-09-23 |
Saint Gobain |
Procede de fabrication d'une structure a surface externe texturee pour dispositif a diode electroluminescente organique et struture a surface externe texturee
|
|
CN102439697B
(zh)
|
2009-04-03 |
2015-08-19 |
应用材料公司 |
高压rf-dc溅射及改善此工艺的膜均匀性和阶梯覆盖率的方法
|
|
US20100297854A1
(en)
|
2009-04-22 |
2010-11-25 |
Applied Materials, Inc. |
High throughput selective oxidation of silicon and polysilicon using plasma at room temperature
|
|
US20100304027A1
(en)
|
2009-05-27 |
2010-12-02 |
Applied Materials, Inc. |
Substrate processing system and methods thereof
|
|
JP4415062B1
(ja)
|
2009-06-22 |
2010-02-17 |
富士フイルム株式会社 |
薄膜トランジスタ及び薄膜トランジスタの製造方法
|
|
KR20110000960A
(ko)
|
2009-06-29 |
2011-01-06 |
삼성전자주식회사 |
반도체 칩, 스택 모듈, 메모리 카드 및 그 제조 방법
|
|
JP5293459B2
(ja)
*
|
2009-07-01 |
2013-09-18 |
東京エレクトロン株式会社 |
基板処理装置
|
|
JP5174966B2
(ja)
|
2009-07-01 |
2013-04-03 |
三菱電機株式会社 |
薄膜太陽電池およびその製造方法
|
|
JP2012197463A
(ja)
|
2009-07-03 |
2012-10-18 |
Canon Anelva Corp |
薄膜の成膜方法
|
|
JP5412193B2
(ja)
*
|
2009-07-07 |
2014-02-12 |
三菱重工業株式会社 |
ターボ冷凍機
|
|
US20110011737A1
(en)
|
2009-07-17 |
2011-01-20 |
Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan |
High-power pulse magnetron sputtering apparatus and surface treatment apparatus using the same
|
|
JP5568913B2
(ja)
|
2009-07-24 |
2014-08-13 |
株式会社ユーテック |
Ｐｚｔ膜の製造方法及び水蒸気加熱装置
|
|
US9548228B2
(en)
|
2009-08-04 |
2017-01-17 |
Lam Research Corporation |
Void free tungsten fill in different sized features
|
|
US8741788B2
(en)
|
2009-08-06 |
2014-06-03 |
Applied Materials, Inc. |
Formation of silicon oxide using non-carbon flowable CVD processes
|
|
KR20110023007A
(ko)
|
2009-08-28 |
2011-03-08 |
삼성전자주식회사 |
박막 태양 전지 및 이의 제조방법
|
|
JP2011066100A
(ja)
|
2009-09-16 |
2011-03-31 |
Bridgestone Corp |
光硬化性転写シート、及びこれを用いた凹凸パターンの形成方法
|
|
US8278224B1
(en)
|
2009-09-24 |
2012-10-02 |
Novellus Systems, Inc. |
Flowable oxide deposition using rapid delivery of process gases
|
|
US8449942B2
(en)
|
2009-11-12 |
2013-05-28 |
Applied Materials, Inc. |
Methods of curing non-carbon flowable CVD films
|
|
CN103151266B
(zh)
|
2009-11-20 |
2016-08-03 |
株式会社半导体能源研究所 |
用于制造半导体器件的方法
|
|
US20110151677A1
(en)
|
2009-12-21 |
2011-06-23 |
Applied Materials, Inc. |
Wet oxidation process performed on a dielectric material formed from a flowable cvd process
|
|
JP2013517616A
(ja)
|
2010-01-06 |
2013-05-16 |
アプライド マテリアルズ インコーポレイテッド |
酸化物ライナを使用する流動可能な誘電体
|
|
WO2011084752A2
(en)
|
2010-01-07 |
2011-07-14 |
Applied Materials, Inc. |
In-situ ozone cure for radical-component cvd
|
|
US8691687B2
(en)
|
2010-01-07 |
2014-04-08 |
International Business Machines Corporation |
Superfilled metal contact vias for semiconductor devices
|
|
US20110174363A1
(en)
|
2010-01-21 |
2011-07-21 |
Aqt Solar, Inc. |
Control of Composition Profiles in Annealed CIGS Absorbers
|
|
EP2526339A4
(en)
*
|
2010-01-21 |
2015-03-11 |
Powerdyne Inc |
PRODUCTION OF STEAM FROM A CARBON SUBSTANCE
|
|
US8293658B2
(en)
|
2010-02-17 |
2012-10-23 |
Asm America, Inc. |
Reactive site deactivation against vapor deposition
|
|
US20110204518A1
(en)
|
2010-02-23 |
2011-08-25 |
Globalfoundries Inc. |
Scalability with reduced contact resistance
|
|
WO2011109148A2
(en)
|
2010-03-05 |
2011-09-09 |
Applied Materials, Inc. |
Conformal layers by radical-component cvd
|
|
TW201133974A
(en)
|
2010-03-23 |
2011-10-01 |
Nat Univ Tsing Hua |
Method for improving the efficiency of a flexible organic solar cell
|
|
US9129945B2
(en)
|
2010-03-24 |
2015-09-08 |
Applied Materials, Inc. |
Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance
|
|
US8795488B2
(en)
|
2010-03-31 |
2014-08-05 |
Applied Materials, Inc. |
Apparatus for physical vapor deposition having centrally fed RF energy
|
|
WO2011132625A1
(en)
|
2010-04-23 |
2011-10-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
JP5697534B2
(ja)
|
2010-05-14 |
2015-04-08 |
株式会社半導体エネルギー研究所 |
トランジスタの作製方法
|
|
KR101163711B1
(ko)
|
2010-06-15 |
2012-07-09 |
서울대학교산학협력단 |
함몰된 바디에 두개의 게이트를 갖는 1ｔ 디램 소자와 그 동작방법 및 제조방법
|
|
CN101871043B
(zh)
|
2010-06-25 |
2012-07-18 |
东莞市康汇聚线材科技有限公司 |
一种退火炉蒸汽发生器及其控制方法
|
|
US8318584B2
(en)
|
2010-07-30 |
2012-11-27 |
Applied Materials, Inc. |
Oxide-rich liner layer for flowable CVD gapfill
|
|
JP2012049446A
(ja)
*
|
2010-08-30 |
2012-03-08 |
Toshiba Corp |
超臨界乾燥方法及び超臨界乾燥システム
|
|
EP2426720A1
(en)
|
2010-09-03 |
2012-03-07 |
Applied Materials, Inc. |
Staggered thin film transistor and method of forming the same
|
|
TW201216331A
(en)
|
2010-10-05 |
2012-04-16 |
Applied Materials Inc |
Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
|
|
JP2012089744A
(ja)
|
2010-10-21 |
2012-05-10 |
Elpida Memory Inc |
半導体装置の製造方法
|
|
KR101691804B1
(ko)
*
|
2010-12-16 |
2017-01-10 |
삼성전자주식회사 |
기판 처리 방법 및 이를 수행하기 위한 기판 처리 시스템
|
|
US20120153483A1
(en)
|
2010-12-20 |
2012-06-21 |
Akolkar Rohan N |
Barrierless single-phase interconnect
|
|
JP5806827B2
(ja)
|
2011-03-18 |
2015-11-10 |
東京エレクトロン株式会社 |
ゲートバルブ装置及び基板処理装置並びにその基板処理方法
|
|
JP5823713B2
(ja)
*
|
2011-03-24 |
2015-11-25 |
株式会社東芝 |
蒸発器及び冷却装置
|
|
JP5450494B2
(ja)
|
2011-03-25 |
2014-03-26 |
株式会社東芝 |
半導体基板の超臨界乾燥方法
|
|
WO2012134025A1
(ko)
|
2011-03-25 |
2012-10-04 |
Lee Seo Young |
광도파로 및 그 제조방법
|
|
WO2012133583A1
(ja)
|
2011-03-30 |
2012-10-04 |
大日本印刷株式会社 |
超臨界乾燥装置及び超臨界乾燥方法
|
|
US20120252210A1
(en)
|
2011-03-30 |
2012-10-04 |
Tokyo Electron Limited |
Method for modifying metal cap layers in semiconductor devices
|
|
US8524600B2
(en)
|
2011-03-31 |
2013-09-03 |
Applied Materials, Inc. |
Post deposition treatments for CVD cobalt films
|
|
US8637410B2
(en)
|
2011-04-08 |
2014-01-28 |
Applied Materials, Inc. |
Method for metal deposition using hydrogen plasma
|
|
US9299581B2
(en)
|
2011-05-12 |
2016-03-29 |
Applied Materials, Inc. |
Methods of dry stripping boron-carbon films
|
|
WO2012165377A1
(ja)
|
2011-05-30 |
2012-12-06 |
東京エレクトロン株式会社 |
基板処理方法、基板処理装置および記憶媒体
|
|
JP6085423B2
(ja)
|
2011-05-30 |
2017-02-22 |
株式会社東芝 |
基板処理方法、基板処理装置および記憶媒体
|
|
US8435887B2
(en)
|
2011-06-02 |
2013-05-07 |
International Business Machines Corporation |
Copper interconnect formation
|
|
US8466073B2
(en)
|
2011-06-03 |
2013-06-18 |
Applied Materials, Inc. |
Capping layer for reduced outgassing
|
|
GB201110117D0
(en)
|
2011-06-16 |
2011-07-27 |
Fujifilm Mfg Europe Bv |
method and device for manufacturing a barrie layer on a flexible substrate
|
|
KR101951911B1
(ko)
|
2011-06-28 |
2019-02-25 |
다이나믹 마이크로시스템즈 세미컨덕터 이큅먼트 게엠베하 |
반도체 스토커 시스템들 및 방법들
|
|
JP5544666B2
(ja)
*
|
2011-06-30 |
2014-07-09 |
セメス株式会社 |
基板処理装置
|
|
WO2013008982A1
(ko)
|
2011-07-14 |
2013-01-17 |
엘티씨 (주) |
높은 광추출 성능을 갖는 무기 산란막 {inorganic scattering films having high light extraction performance}
|
|
KR101980590B1
(ko)
*
|
2011-09-01 |
2019-05-23 |
세메스 주식회사 |
기판 처리 장치
|
|
US10023954B2
(en)
|
2011-09-15 |
2018-07-17 |
Applied Materials, Inc. |
Slit valve apparatus, systems, and methods
|
|
US8546227B2
(en)
|
2011-09-15 |
2013-10-01 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Contact for high-K metal gate device
|
|
US9368603B2
(en)
|
2011-09-15 |
2016-06-14 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Contact for high-k metal gate device
|
|
KR101568748B1
(ko)
|
2011-11-01 |
2015-11-12 |
가부시키가이샤 히다치 고쿠사이 덴키 |
반도체 장치의 제조 방법, 반도체 장치의 제조 장치 및 기록 매체
|
|
JP5712902B2
(ja)
|
2011-11-10 |
2015-05-07 |
東京エレクトロン株式会社 |
基板処理装置、基板処理方法及び記憶媒体
|
|
KR101305904B1
(ko)
|
2011-12-07 |
2013-09-09 |
주식회사 테스 |
반도체소자 제조방법
|
|
WO2013083129A1
(en)
|
2011-12-08 |
2013-06-13 |
Inmold Biosystems A/S |
Spin-on-glass assisted polishing of rough substrates
|
|
JP2013122493A
(ja)
|
2011-12-09 |
2013-06-20 |
Furukawa Electric Co Ltd:The |
光分岐素子および光分岐回路
|
|
JP2013154315A
(ja)
|
2012-01-31 |
2013-08-15 |
Ricoh Co Ltd |
薄膜形成装置、薄膜形成方法、電気−機械変換素子、液体吐出ヘッド、およびインクジェット記録装置
|
|
KR102028779B1
(ko)
|
2012-02-13 |
2019-10-04 |
어플라이드 머티어리얼스, 인코포레이티드 |
기판의 선택적 산화를 위한 방법 및 장치
|
|
US8871656B2
(en)
|
2012-03-05 |
2014-10-28 |
Applied Materials, Inc. |
Flowable films using alternative silicon precursors
|
|
JP5577365B2
(ja)
|
2012-03-15 |
2014-08-20 |
コマツ産機株式会社 |
プレス機械の制動性能確認装置
|
|
US9330939B2
(en)
|
2012-03-28 |
2016-05-03 |
Applied Materials, Inc. |
Method of enabling seamless cobalt gap-fill
|
|
US9303311B2
(en)
|
2012-03-30 |
2016-04-05 |
Applied Materials, Inc. |
Substrate processing system with mechanically floating target assembly
|
|
US9647066B2
(en)
|
2012-04-24 |
2017-05-09 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Dummy FinFET structure and method of making same
|
|
US20130288485A1
(en)
|
2012-04-30 |
2013-10-31 |
Applied Materials, Inc. |
Densification for flowable films
|
|
US9587880B2
(en)
*
|
2012-05-31 |
2017-03-07 |
Semes Co., Ltd. |
Apparatus and method for drying substrate
|
|
US20130337171A1
(en)
|
2012-06-13 |
2013-12-19 |
Qualcomm Mems Technologies, Inc. |
N2 purged o-ring for chamber in chamber ald system
|
|
KR101224520B1
(ko)
|
2012-06-27 |
2013-01-22 |
(주)이노시티 |
프로세스 챔버
|
|
KR20140003776A
(ko)
|
2012-06-28 |
2014-01-10 |
주식회사 메카로닉스 |
고 저항 산화아연 박막의 제조방법
|
|
US20150309073A1
(en)
|
2012-07-13 |
2015-10-29 |
Northwestern University |
Multifunctional graphene coated scanning tips
|
|
JP2014019912A
(ja)
|
2012-07-19 |
2014-02-03 |
Tokyo Electron Ltd |
タングステン膜の成膜方法
|
|
JP5792390B2
(ja)
|
2012-07-30 |
2015-10-14 |
株式会社日立国際電気 |
基板処理装置、半導体装置の製造方法及びプログラム
|
|
US20140034632A1
(en)
|
2012-08-01 |
2014-02-06 |
Heng Pan |
Apparatus and method for selective oxidation at lower temperature using remote plasma source
|
|
US8846448B2
(en)
|
2012-08-10 |
2014-09-30 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Warpage control in a package-on-package structure
|
|
WO2014030371A1
(ja)
|
2012-08-24 |
2014-02-27 |
独立行政法人科学技術振興機構 |
ゲルマニウム層上に窒化酸化アルミニウム膜を備える半導体構造およびその製造方法
|
|
KR102002782B1
(ko)
|
2012-09-10 |
2019-07-23 |
삼성전자주식회사 |
팽창성 부재를 사용하는 반도체 장치의 제조 방법
|
|
JP2014060256A
(ja)
|
2012-09-18 |
2014-04-03 |
Tokyo Electron Ltd |
処理システム
|
|
JP6325229B2
(ja)
|
2012-10-17 |
2018-05-16 |
株式会社半導体エネルギー研究所 |
酸化物膜の作製方法
|
|
US9337318B2
(en)
|
2012-10-26 |
2016-05-10 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
FinFET with dummy gate on non-recessed shallow trench isolation (STI)
|
|
US9157730B2
(en)
|
2012-10-26 |
2015-10-13 |
Applied Materials, Inc. |
PECVD process
|
|
SG2013083241A
(en)
|
2012-11-08 |
2014-06-27 |
Novellus Systems Inc |
Conformal film deposition for gapfill
|
|
JP6060460B2
(ja)
|
2012-11-22 |
2017-01-18 |
アーゼット・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ |
シリカ質膜の形成方法及び同方法で形成されたシリカ質膜
|
|
TWI826650B
(zh)
*
|
2012-11-26 |
2023-12-21 |
美商應用材料股份有限公司 |
用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
|
|
WO2014085511A2
(en)
|
2012-11-27 |
2014-06-05 |
The Regents Of The University Of California |
Polymerized metal-organic material for printable photonic devices
|
|
US9123577B2
(en)
|
2012-12-12 |
2015-09-01 |
Sandisk Technologies Inc. |
Air gap isolation in non-volatile memory using sacrificial films
|
|
JP2014141739A
(ja)
|
2012-12-27 |
2014-08-07 |
Tokyo Electron Ltd |
金属マンガン膜の成膜方法、処理システム、電子デバイスの製造方法および電子デバイス
|
|
US9559181B2
(en)
|
2013-11-26 |
2017-01-31 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Structure and method for FinFET device with buried sige oxide
|
|
US20150357232A1
(en)
|
2013-01-22 |
2015-12-10 |
Ps4 Luxco S.A.R.L. |
Method for manufacturing semiconductor device
|
|
US9018108B2
(en)
|
2013-01-25 |
2015-04-28 |
Applied Materials, Inc. |
Low shrinkage dielectric films
|
|
US20140216498A1
(en)
|
2013-02-06 |
2014-08-07 |
Kwangduk Douglas Lee |
Methods of dry stripping boron-carbon films
|
|
SG11201505371UA
(en)
|
2013-02-19 |
2015-09-29 |
Applied Materials Inc |
Hdd patterning using flowable cvd film
|
|
KR101443792B1
(ko)
|
2013-02-20 |
2014-09-26 |
국제엘렉트릭코리아 주식회사 |
건식 기상 식각 장치
|
|
KR20140104112A
(ko)
|
2013-02-20 |
2014-08-28 |
주식회사 에스에프에이 |
평면 디스플레이용 화학 기상 증착장치
|
|
KR20140106977A
(ko)
|
2013-02-27 |
2014-09-04 |
삼성전자주식회사 |
고성능 금속 산화물 반도체 박막 트랜지스터 및 그 제조방법
|
|
US9354508B2
(en)
|
2013-03-12 |
2016-05-31 |
Applied Materials, Inc. |
Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
|
|
US9680095B2
(en)
|
2013-03-13 |
2017-06-13 |
Macronix International Co., Ltd. |
Resistive RAM and fabrication method
|
|
US9196768B2
(en)
|
2013-03-15 |
2015-11-24 |
Jehad A. Abushama |
Method and apparatus for depositing copper—indium—gallium selenide (CuInGaSe2-CIGS) thin films and other materials on a substrate
|
|
US20140271097A1
(en)
|
2013-03-15 |
2014-09-18 |
Applied Materials, Inc. |
Processing systems and methods for halide scavenging
|
|
CN111489987A
(zh)
|
2013-03-15 |
2020-08-04 |
应用材料公司 |
基板沉积系统、机械手移送设备及用于电子装置制造的方法
|
|
US9378994B2
(en)
|
2013-03-15 |
2016-06-28 |
Applied Materials, Inc. |
Multi-position batch load lock apparatus and systems and methods including same
|
|
US10224258B2
(en)
|
2013-03-22 |
2019-03-05 |
Applied Materials, Inc. |
Method of curing thermoplastics with microwave energy
|
|
US9190321B2
(en)
|
2013-04-08 |
2015-11-17 |
International Business Machines Corporation |
Self-forming embedded diffusion barriers
|
|
US9087903B2
(en)
|
2013-04-26 |
2015-07-21 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Buffer layer omega gate
|
|
US10172189B2
(en)
|
2013-04-26 |
2019-01-01 |
Applied Materials, Inc. |
Method and apparatus for microwave treatment of dielectric films
|
|
KR101287035B1
(ko)
|
2013-05-07 |
2013-07-17 |
호용종합건설주식회사 |
관 갱생 건증기 공급용 보일러 시스템
|
|
JP6068633B2
(ja)
|
2013-05-31 |
2017-01-25 |
株式会社日立国際電気 |
基板処理装置、半導体装置の製造方法及び炉口蓋体
|
|
JP6196481B2
(ja)
|
2013-06-24 |
2017-09-13 |
株式会社荏原製作所 |
排ガス処理装置
|
|
KR101542803B1
(ko)
|
2013-07-09 |
2015-08-07 |
주식회사 네오세미텍 |
고온고압 송풍식 퍼지수단을 구비한 진공챔버 및 이를 이용한 세정방법
|
|
EP2832899A1
(fr)
|
2013-08-02 |
2015-02-04 |
The Swatch Group Research and Development Ltd. |
Revêtement de diamant et procédé de dépôt d'un tel revêtement
|
|
US9178103B2
(en)
|
2013-08-09 |
2015-11-03 |
Tsmc Solar Ltd. |
Apparatus and method for forming chalcogenide semiconductor absorber materials with sodium impurities
|
|
CN105453230B
(zh)
|
2013-08-16 |
2019-06-14 |
应用材料公司 |
用六氟化钨(wf6)回蚀进行钨沉积
|
|
US9548200B2
(en)
|
2013-08-21 |
2017-01-17 |
Applied Materials, Inc. |
Variable frequency microwave (VFM) processes and applications in semiconductor thin film fabrications
|
|
JP6226648B2
(ja)
|
2013-09-04 |
2017-11-08 |
昭和電工株式会社 |
ＳｉＣエピタキシャルウェハの製造方法
|
|
US9224734B2
(en)
|
2013-09-13 |
2015-12-29 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
CMOS devices with reduced leakage and methods of forming the same
|
|
KR20150031889A
(ko)
|
2013-09-17 |
2015-03-25 |
엘지이노텍 주식회사 |
테양전지
|
|
KR102403706B1
(ko)
|
2013-09-27 |
2022-05-30 |
어플라이드 머티어리얼스, 인코포레이티드 |
심리스 코발트 갭-충전을 가능하게 하는 방법
|
|
JP6165577B2
(ja)
|
2013-09-30 |
2017-07-19 |
Hoya株式会社 |
マスクブランクの製造方法及び転写用マスクの製造方法
|
|
US9396986B2
(en)
|
2013-10-04 |
2016-07-19 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Mechanism of forming a trench structure
|
|
US9583655B2
(en)
|
2013-10-08 |
2017-02-28 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method of making photovoltaic device having high quantum efficiency
|
|
JP6129712B2
(ja)
|
2013-10-24 |
2017-05-17 |
信越化学工業株式会社 |
過熱水蒸気処理装置
|
|
JP6254823B2
(ja)
|
2013-11-01 |
2017-12-27 |
Ｊｘ金属株式会社 |
ニッケルシリサイドスパッタリングターゲット及びその製造方法
|
|
JP6221710B2
(ja)
|
2013-12-10 |
2017-11-01 |
住友電気工業株式会社 |
半導体装置の製造方法
|
|
SG10201805220TA
(en)
|
2013-12-22 |
2018-08-30 |
Applied Materials Inc |
Glass ceramic for ultraviolet lithography and method of manufacturing thereof
|
|
US9406547B2
(en)
|
2013-12-24 |
2016-08-02 |
Intel Corporation |
Techniques for trench isolation using flowable dielectric materials
|
|
CN103745978B
(zh)
|
2014-01-03 |
2016-08-17 |
京东方科技集团股份有限公司 |
显示装置、阵列基板及其制作方法
|
|
US9677172B2
(en)
|
2014-01-21 |
2017-06-13 |
Applied Materials, Inc. |
Methods for forming a cobalt-ruthenium liner layer for interconnect structures
|
|
WO2015116661A1
(en)
*
|
2014-01-28 |
2015-08-06 |
Phononic Devices, Inc. |
Mechanism for mitigating high heat-flux conditions in a thermosiphon evaporator or condenser
|
|
US9257527B2
(en)
|
2014-02-14 |
2016-02-09 |
International Business Machines Corporation |
Nanowire transistor structures with merged source/drain regions using auxiliary pillars
|
|
US9818603B2
(en)
|
2014-03-06 |
2017-11-14 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor devices and methods of manufacture thereof
|
|
US9496145B2
(en)
|
2014-03-19 |
2016-11-15 |
Applied Materials, Inc. |
Electrochemical plating methods
|
|
CA2943028A1
(en)
|
2014-03-21 |
2015-09-24 |
Brookhaven Science Associates, Llc |
Hole blocking, electron transporting and window layer for optimized cuin(1-x)ga(x)se2 solar cells
|
|
US11183375B2
(en)
|
2014-03-31 |
2021-11-23 |
Applied Materials, Inc. |
Deposition system with multi-cathode and method of manufacture thereof
|
|
KR101571715B1
(ko)
|
2014-04-23 |
2015-11-25 |
주식회사 풍산 |
고압 열처리를 이용한 스핀 온 글래스 절연막 형성방법
|
|
US9984915B2
(en)
|
2014-05-30 |
2018-05-29 |
Infineon Technologies Ag |
Semiconductor wafer and method for processing a semiconductor wafer
|
|
CN104047676A
(zh)
|
2014-06-14 |
2014-09-17 |
马根昌 |
改良式对冲消声器
|
|
KR102369142B1
(ko)
|
2014-06-16 |
2022-03-02 |
인텔 코포레이션 |
금속 인터커넥트의 시임 치유
|
|
CN104089491B
(zh)
|
2014-07-03 |
2015-11-04 |
肇庆宏旺金属实业有限公司 |
退火炉的余热回收利用系统
|
|
US9257314B1
(en)
|
2014-07-31 |
2016-02-09 |
Poongsan Corporation |
Methods and apparatuses for deuterium recovery
|
|
US9695503B2
(en)
|
2014-08-22 |
2017-07-04 |
Applied Materials, Inc. |
High power impulse magnetron sputtering process to achieve a high density high SP3 containing layer
|
|
JPWO2016038664A1
(ja)
|
2014-09-08 |
2017-04-27 |
三菱電機株式会社 |
半導体アニール装置
|
|
US9773865B2
(en)
|
2014-09-22 |
2017-09-26 |
International Business Machines Corporation |
Self-forming spacers using oxidation
|
|
US9484461B2
(en)
|
2014-09-29 |
2016-11-01 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Integrated circuit structure with substrate isolation and un-doped channel
|
|
US9362107B2
(en)
|
2014-09-30 |
2016-06-07 |
Applied Materials, Inc. |
Flowable low-k dielectric gapfill treatment
|
|
US9711414B2
(en)
|
2014-10-21 |
2017-07-18 |
Samsung Electronics Co., Ltd. |
Strained stacked nanosheet FETS and/or quantum well stacked nanosheet
|
|
US20160118391A1
(en)
|
2014-10-22 |
2016-04-28 |
SanDisk Technologies, Inc. |
Deuterium anneal of semiconductor channels in a three-dimensional memory structure
|
|
SG11201703195QA
(en)
|
2014-10-24 |
2017-05-30 |
Versum Materials Us Llc |
Compositions and methods using same for deposition of silicon-containing film
|
|
US10204764B2
(en)
|
2014-10-28 |
2019-02-12 |
Applied Materials, Inc. |
Methods for forming a metal silicide interconnection nanowire structure
|
|
US9768060B2
(en)
|
2014-10-29 |
2017-09-19 |
Applied Materials, Inc. |
Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
|
|
US9543141B2
(en)
|
2014-12-09 |
2017-01-10 |
Taiwan Semiconductor Manufacturing Co., Ltd |
Method for curing flowable layer
|
|
US9780214B2
(en)
|
2014-12-22 |
2017-10-03 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Semiconductor device including Fin- FET and manufacturing method thereof
|
|
US9777378B2
(en)
|
2015-01-07 |
2017-10-03 |
Applied Materials, Inc. |
Advanced process flow for high quality FCVD films
|
|
US9613859B2
(en)
|
2015-01-09 |
2017-04-04 |
Applied Materials, Inc. |
Direct deposition of nickel silicide nanowire
|
|
TW201639063A
(zh)
|
2015-01-22 |
2016-11-01 |
應用材料股份有限公司 |
批量加熱和冷卻腔室或負載鎖定裝置
|
|
KR102058595B1
(ko)
|
2015-02-06 |
2019-12-23 |
버슘머트리얼즈 유에스, 엘엘씨 |
탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법
|
|
US9859039B2
(en)
|
2015-02-13 |
2018-01-02 |
Alexander Otto |
Multifilament superconducting wire with high resistance sleeves
|
|
US9711535B2
(en)
|
2015-03-13 |
2017-07-18 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method of forming FinFET channel
|
|
US20160268127A1
(en)
|
2015-03-13 |
2016-09-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide and Manufacturing Method Thereof
|
|
US9590102B2
(en)
|
2015-04-15 |
2017-03-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
WO2016172003A1
(en)
|
2015-04-20 |
2016-10-27 |
Applied Materials, Inc. |
Buffer chamber wafer heating mechanism and supporting robot
|
|
US20160314964A1
(en)
|
2015-04-21 |
2016-10-27 |
Lam Research Corporation |
Gap fill using carbon-based films
|
|
US9685303B2
(en)
|
2015-05-08 |
2017-06-20 |
Varian Semiconductor Equipment Associates, Inc. |
Apparatus for heating and processing a substrate
|
|
US10443934B2
(en)
|
2015-05-08 |
2019-10-15 |
Varian Semiconductor Equipment Associates, Inc. |
Substrate handling and heating system
|
|
TWI826223B
(zh)
|
2015-05-11 |
2023-12-11 |
美商應用材料股份有限公司 |
水平環繞式閘極與鰭式場效電晶體元件的隔離
|
|
US10446706B2
(en)
|
2015-05-15 |
2019-10-15 |
Beijing Apollo Ding Rong Solar Technology Co., Ltd. |
Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction
|
|
KR101681190B1
(ko)
|
2015-05-15 |
2016-12-02 |
세메스 주식회사 |
기판 건조 장치 및 방법
|
|
US10945313B2
(en)
|
2015-05-27 |
2021-03-09 |
Applied Materials, Inc. |
Methods and apparatus for a microwave batch curing process
|
|
KR20180006496A
(ko)
|
2015-06-05 |
2018-01-17 |
어플라이드 머티어리얼스, 인코포레이티드 |
서셉터 포지션 및 회전 장치, 및 사용 방법들
|
|
JP7066929B2
(ja)
|
2015-06-05 |
2022-05-16 |
東京エレクトロン株式会社 |
インターコネクトのためのルテニウムメタルによるフィーチャ充填
|
|
US9633839B2
(en)
|
2015-06-19 |
2017-04-25 |
Applied Materials, Inc. |
Methods for depositing dielectric films via physical vapor deposition processes
|
|
US9728430B2
(en)
|
2015-06-29 |
2017-08-08 |
Varian Semiconductor Equipment Associates, Inc. |
Electrostatic chuck with LED heating
|
|
US20160379854A1
(en)
|
2015-06-29 |
2016-12-29 |
Varian Semiconductor Equipment Associates, Inc. |
Vacuum Compatible LED Substrate Heater
|
|
US10170608B2
(en)
|
2015-06-30 |
2019-01-01 |
International Business Machines Corporation |
Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET
|
|
US9646850B2
(en)
|
2015-07-06 |
2017-05-09 |
Globalfoundries Inc. |
High-pressure anneal
|
|
US9972504B2
(en)
|
2015-08-07 |
2018-05-15 |
Lam Research Corporation |
Atomic layer etching of tungsten for enhanced tungsten deposition fill
|
|
US9666606B2
(en)
|
2015-08-21 |
2017-05-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
US10468238B2
(en)
|
2015-08-21 |
2019-11-05 |
Applied Materials, Inc. |
Methods and apparatus for co-sputtering multiple targets
|
|
US9484406B1
(en)
|
2015-09-03 |
2016-11-01 |
Applied Materials, Inc. |
Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications
|
|
US9530737B1
(en)
|
2015-09-28 |
2016-12-27 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9716142B2
(en)
|
2015-10-12 |
2017-07-25 |
International Business Machines Corporation |
Stacked nanowires
|
|
US9755047B2
(en)
|
2015-10-27 |
2017-09-05 |
United Microelectronics Corp. |
Semiconductor process and semiconductor device
|
|
US9484255B1
(en)
|
2015-11-03 |
2016-11-01 |
International Business Machines Corporation |
Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts
|
|
US9754840B2
(en)
|
2015-11-16 |
2017-09-05 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Horizontal gate-all-around device having wrapped-around source and drain
|
|
US9502307B1
(en)
|
2015-11-20 |
2016-11-22 |
International Business Machines Corporation |
Forming a semiconductor structure for reduced negative bias temperature instability
|
|
US9633838B2
(en)
|
2015-12-28 |
2017-04-25 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Vapor deposition of silicon-containing films using penta-substituted disilanes
|
|
WO2017120102A1
(en)
|
2016-01-05 |
2017-07-13 |
Applied Materials, Inc. |
Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications
|
|
US9805976B2
(en)
|
2016-01-08 |
2017-10-31 |
Applied Materials, Inc. |
Co or Ni and Cu integration for small and large features in integrated circuits
|
|
US9570551B1
(en)
|
2016-02-05 |
2017-02-14 |
International Business Machines Corporation |
Replacement III-V or germanium nanowires by unilateral confined epitaxial growth
|
|
US9679810B1
(en)
|
2016-02-11 |
2017-06-13 |
Globalfoundries Inc. |
Integrated circuit having improved electromigration performance and method of forming same
|
|
JP6240695B2
(ja)
|
2016-03-02 |
2017-11-29 |
株式会社日立国際電気 |
基板処理装置、半導体装置の製造方法及びプログラム
|
|
KR102721654B1
(ko)
|
2016-03-11 |
2024-10-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
복합체 및 트랜지스터
|
|
US11326253B2
(en)
|
2016-04-27 |
2022-05-10 |
Applied Materials, Inc. |
Atomic layer deposition of protective coatings for semiconductor process chamber components
|
|
US10049927B2
(en)
|
2016-06-10 |
2018-08-14 |
Applied Materials, Inc. |
Seam-healing method upon supra-atmospheric process in diffusion promoting ambient
|
|
TWI680535B
(zh)
|
2016-06-14 |
2019-12-21 |
美商應用材料股份有限公司 |
金屬及含金屬化合物之氧化體積膨脹
|
|
US9933314B2
(en)
|
2016-06-30 |
2018-04-03 |
Varian Semiconductor Equipment Associates, Inc. |
Semiconductor workpiece temperature measurement system
|
|
US9876019B1
(en)
|
2016-07-13 |
2018-01-23 |
Globalfoundries Singapore Pte. Ltd. |
Integrated circuits with programmable memory and methods for producing the same
|
|
US10020186B2
(en)
|
2016-07-29 |
2018-07-10 |
Applied Materials, Inc. |
Silicon germanium selective oxidation process
|
|
US10115670B2
(en)
|
2016-08-17 |
2018-10-30 |
International Business Machines Corporation |
Formation of advanced interconnects including set of metal conductor structures in patterned dielectric layer
|
|
US10858727B2
(en)
|
2016-08-19 |
2020-12-08 |
Applied Materials, Inc. |
High density, low stress amorphous carbon film, and process and equipment for its deposition
|
|
US20180087418A1
(en)
|
2016-09-22 |
2018-03-29 |
Castrol Limited |
Fluid Method and System
|
|
EP3520136A4
(en)
|
2016-09-30 |
2020-05-06 |
Applied Materials, Inc. |
METHOD FOR SHAPING SELF-ALIGNED VIA CONTACTS
|
|
US10249525B2
(en)
|
2016-10-03 |
2019-04-02 |
Applied Materials, Inc. |
Dynamic leveling process heater lift
|
|
US9741626B1
(en)
|
2016-10-20 |
2017-08-22 |
International Business Machines Corporation |
Vertical transistor with uniform bottom spacer formed by selective oxidation
|
|
KR102582671B1
(ko)
|
2016-12-22 |
2023-09-25 |
삼성전자주식회사 |
반도체 소자
|
|
US10570506B2
(en)
|
2017-01-24 |
2020-02-25 |
Applied Materials, Inc. |
Method to improve film quality for PVD carbon with reactive gas and bias power
|
|
TWI809712B
(zh)
|
2017-01-24 |
2023-07-21 |
美商應用材料股份有限公司 |
用於在基板上形成鈷層的方法
|
|
US10224224B2
(en)
|
2017-03-10 |
2019-03-05 |
Micromaterials, LLC |
High pressure wafer processing systems and related methods
|
|
WO2018183287A1
(en)
|
2017-03-31 |
2018-10-04 |
Applied Materials, Inc. |
Two-step process for gapfilling high aspect ratio trenches with amorphous silicon film
|
|
JP7118512B2
(ja)
|
2017-04-07 |
2022-08-16 |
アプライド マテリアルズ インコーポレイテッド |
反応性アニールを使用する間隙充填
|
|
KR20190133276A
(ko)
|
2017-04-21 |
2019-12-02 |
어플라이드 머티어리얼스, 인코포레이티드 |
개선된 전극 조립체
|
|
CN116504679A
(zh)
|
2017-05-01 |
2023-07-28 |
应用材料公司 |
具有真空隔离和预处理环境的高压退火腔室
|
|
KR20190138315A
(ko)
|
2017-05-03 |
2019-12-12 |
어플라이드 머티어리얼스, 인코포레이티드 |
고온 세라믹 가열기 상의 통합형 기판 온도 측정
|
|
WO2018212940A1
(en)
|
2017-05-19 |
2018-11-22 |
Applied Materials, Inc. |
Apparatus for collection and subsequent reaction of liquid and solid effluent into gaseous effluent
|
|
US10622214B2
(en)
|
2017-05-25 |
2020-04-14 |
Applied Materials, Inc. |
Tungsten defluorination by high pressure treatment
|
|
US10847360B2
(en)
|
2017-05-25 |
2020-11-24 |
Applied Materials, Inc. |
High pressure treatment of silicon nitride film
|
|
US20180350563A1
(en)
|
2017-06-02 |
2018-12-06 |
Applied Materials, Inc. |
Quality improvement of films deposited on a substrate
|
|
JP7190450B2
(ja)
|
2017-06-02 |
2022-12-15 |
アプライド マテリアルズ インコーポレイテッド |
炭化ホウ素ハードマスクのドライストリッピング
|
|
US10388533B2
(en)
|
2017-06-16 |
2019-08-20 |
Applied Materials, Inc. |
Process integration method to tune resistivity of nickel silicide
|
|
US10234630B2
(en)
|
2017-07-12 |
2019-03-19 |
Applied Materials, Inc. |
Method for creating a high refractive index wave guide
|
|
US10269571B2
(en)
|
2017-07-12 |
2019-04-23 |
Applied Materials, Inc. |
Methods for fabricating nanowire for semiconductor applications
|
|
US10179941B1
(en)
|
2017-07-14 |
2019-01-15 |
Applied Materials, Inc. |
Gas delivery system for high pressure processing chamber
|
|
JP6947914B2
(ja)
|
2017-08-18 |
2021-10-13 |
アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ |
高圧高温下のアニールチャンバ
|
|
US10276411B2
(en)
|
2017-08-18 |
2019-04-30 |
Applied Materials, Inc. |
High pressure and high temperature anneal chamber
|
|
US10096516B1
(en)
|
2017-08-18 |
2018-10-09 |
Applied Materials, Inc. |
Method of forming a barrier layer for through via applications
|
|
US10643867B2
(en)
*
|
2017-11-03 |
2020-05-05 |
Applied Materials, Inc. |
Annealing system and method
|
|
EP4321649B1
(en)
|
2017-11-11 |
2025-08-20 |
Micromaterials LLC |
Gas delivery system for high pressure processing chamber
|
|
JP7330181B2
(ja)
|
2017-11-16 |
2023-08-21 |
アプライド マテリアルズ インコーポレイテッド |
高圧蒸気アニール処理装置
|
|
JP2021503714A
(ja)
|
2017-11-17 |
2021-02-12 |
アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ |
高圧処理システムのためのコンデンサシステム
|
|
KR102649241B1
(ko)
|
2018-01-24 |
2024-03-18 |
어플라이드 머티어리얼스, 인코포레이티드 |
고압 어닐링을 사용한 심 힐링
|
|
US11114333B2
(en)
|
2018-02-22 |
2021-09-07 |
Micromaterials, LLC |
Method for depositing and reflow of a high quality etch resistant gapfill dielectric film
|
|
CN111656510A
(zh)
|
2018-02-22 |
2020-09-11 |
应用材料公司 |
处理掩模基板以实现更佳的膜质量的方法
|
|
SG11202008256WA
(en)
|
2018-03-09 |
2020-09-29 |
Applied Materials Inc |
High pressure annealing process for metal containing materials
|
|
US10714331B2
(en)
|
2018-04-04 |
2020-07-14 |
Applied Materials, Inc. |
Method to fabricate thermally stable low K-FinFET spacer
|
|
US10916433B2
(en)
|
2018-04-06 |
2021-02-09 |
Applied Materials, Inc. |
Methods of forming metal silicide layers and metal silicide layers formed therefrom
|
|
WO2019204124A1
(en)
|
2018-04-20 |
2019-10-24 |
Applied Materials, Inc. |
Ceramic wafer heater with integrated pressurized helium cooling
|
|
US10950429B2
(en)
|
2018-05-08 |
2021-03-16 |
Applied Materials, Inc. |
Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
|
|
US10566188B2
(en)
|
2018-05-17 |
2020-02-18 |
Applied Materials, Inc. |
Method to improve film stability
|
|
US11434569B2
(en)
|
2018-05-25 |
2022-09-06 |
Applied Materials, Inc. |
Ground path systems for providing a shorter and symmetrical ground path
|
|
US11499666B2
(en)
|
2018-05-25 |
2022-11-15 |
Applied Materials, Inc. |
Precision dynamic leveling mechanism with long motion capability
|
|
US10704141B2
(en)
|
2018-06-01 |
2020-07-07 |
Applied Materials, Inc. |
In-situ CVD and ALD coating of chamber to control metal contamination
|
|
US10790183B2
(en)
|
2018-06-05 |
2020-09-29 |
Applied Materials, Inc. |
Selective oxidation for 3D device isolation
|
|
US10748783B2
(en)
|
2018-07-25 |
2020-08-18 |
Applied Materials, Inc. |
Gas delivery module
|
|
US20200035513A1
(en)
|
2018-07-25 |
2020-01-30 |
Applied Materials, Inc. |
Processing apparatus
|
|
US10675581B2
(en)
|
2018-08-06 |
2020-06-09 |
Applied Materials, Inc. |
Gas abatement apparatus
|
|
KR102528076B1
(ko)
|
2018-10-30 |
2023-05-03 |
어플라이드 머티어리얼스, 인코포레이티드 |
반도체 응용들을 위한 구조를 식각하기 위한 방법들
|
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