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JP2017527424A5
JP2017527424A5 JP2017531980A JP2017531980A JP2017527424A5 JP 2017527424 A5 JP2017527424 A5 JP 2017527424A5 JP 2017531980 A JP2017531980 A JP 2017531980A JP 2017531980 A JP2017531980 A JP 2017531980A JP 2017527424 A5 JP2017527424 A5 JP 2017527424A5
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laminate panel
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  1. 低磁場磁気共鳴映像法(MRI)のために0.2T未満の磁場強度にあるB磁場を生成するように構成されるB磁石と、
    少なくとも1つのラミネートパネルとを含み、
    前記B磁石は、巻回導体によって形成される並びに前記B磁場に寄与するように構成される少なくとも1つの巻回Bコイルを有する、電磁石を含み、
    前記少なくとも1つのラミネートパネルは、その上に形成される複数のコンポーネントを有し、該複数のコンポーネントは、
    作動させられるときに、放射される磁気共鳴(MR)信号の空間符号化を提供して低磁場MRIを促進する磁場を形成するように或いは磁場に寄与するように構成される、少なくとも1つの勾配コイルと、
    前記B磁場に寄与するように構成される少なくとも1つのパターン化されたBコイルとを含む、
    低磁場MRIシステム。
  2. 前記少なくとも1つのラミネートパネルは、第1のラミネートパネルと、第2のラミネートパネルとを含み、前記第1のラミネートパネル及び前記第2のラミネートパネルは、2平面構成において配置される、請求項1に記載の低磁場MRIシステム。
  3. 前記少なくとも1つの巻回Bコイルは、2平面構成において配置される、少なくとも1つの第1の巻回Bコイルと少なくとも1つの第2の巻回Bコイルとを含む、請求項2に記載の低磁場MRIシステム。
  4. 前記第1のラミネートパネルは、前記B磁石の視野の第1の側で前記少なくとも1つの第1の巻回Bコイルに近接して配置され、前記第2のラミネートパネルは、前記B磁石の前記視野の第2の側で前記少なくとも1つの第2の巻回Bコイルに近接して配置される、請求項3に記載の低磁場MRIシステム。
  5. 前記少なくとも1つのパターン化されたBコイルは、前記B磁場の同質性に影響を与えるよう、前記B磁場に寄与するように構成される、少なくとも1つの補正コイルを含む、請求項1に記載の低磁場MRIシステム。
  6. 前記少なくとも1つのラミネートパネルに形成される前記少なくとも1つの勾配コイルは、x方向、y方向、及びz方向においてそれぞれ空間符号化をもたらすよう、少なくとも1つのx勾配コイルと、少なくとも1つのy勾配コイルと、少なくとも1つのz勾配コイルとを含む、請求項1に記載の低磁場MRIシステム。
  7. 前記B磁石、前記第1のラミネートパネル、及び前記第2のラミネートパネルを収容し且つ/或いは支持するように構成される、輸送可能な構造を更に含み、前記輸送可能なハウジングは、当該低磁場MRIシステムが所望の場所に輸送されることを可能にする、請求項4に記載の低磁場MRIシステム。
  8. 当該低磁場MRIシステムが前記所望の場所に運ばれるのを可能にするよう、前記構造に連結されるホイールを更に含む、請求項7に記載の低磁場MRIシステム。
  9. 当該低磁場MRIシステムを、当該低磁場MRIシステムを輸送するのに適した第1の構成から当該低磁場MRIシステムを作動させるのに適した第2の構成に変換することを容易にするよう、少なくとも1つの変換可能なコンポーネントを更に含む、請求項7に記載の低磁場MRIシステム。
  10. 前記B磁石、前記第1のラミネートパネル、及び前記第2のラミネートパネルを支持し且つ収容するカートを更に含み、該カートは、所望の場所に押されることのできる運搬可能な低磁場MRIシステムをもたらす、請求項1に記載の低磁場MRIシステム。
  11. 患者を支持するように構成される少なくとも1つの滑動コンポーネントを更に含み、該少なくとも1つの滑動コンポーネントは、患者が前記第1のラミネートパネルと前記第2のラミネートパネルとの間に位置付けられることを可能にする、請求項10に記載の低磁場MRIシステム。
  12. 前記第1のラミネートパネルと前記第2のラミネートパネルとを支持するフレームと、
    患者を前記第1のラミネートパネルと前記第2のラミネートパネルとの間に位置付ける調整可能なシートとを更に含む、
    請求項1に記載の低磁場MRIシステム。
  13. 前記第1のラミネートパネル、前記第2のラミネートパネル、前記少なくとも1つの第1の巻回Bコイル、及び前記少なくとも1つの第2の巻回Bコイルは、あるサイズに生成され、特定の解剖学的構造の低磁場MRIを容易にするよう互いに対して配置される、請求項4に記載の低磁場MRIシステム。
  14. 前記第1のラミネートパネル、前記第2のラミネートパネル、前記少なくとも1つの第1の巻回Bコイル、及び少なくとも1つの第2の巻回Bコイルは、あるサイズに生成され、患者の頭部の低磁場MRIを容易にするよう互いに対して配置され、当該低磁場MRIシステムによって生成される前記B磁場は、患者の脳を撮像するのに十分な視野を有する、請求項13に記載の低磁場MRIシステム。
  15. 前記B磁石は、約0.2T以下であり且つ約0.1T以上である強度を有するB磁場を生成するように構成される、請求項1に記載の低磁場MRIシステム。
  16. 前記B磁石は、約0.1T以下であり且つ約50mT以上である強度を有するB磁場を生成するように構成される、請求項1に記載の低磁場MRIシステム。
  17. 前記B磁石は、約50mT以下であり且つ約20mT以上である強度を有するB磁場を生成するように構成される、請求項1に記載の低磁場MRIシステム。
  18. 前記B磁石は、約20mT以下であり且つ約10mT以上である強度を有するB磁場を生成するように構成される、請求項1に記載の低磁場MRIシステム。
  19. 所定のパルスシーケンスに従って無線周波数信号を送信するように構成される少なくとも1つの無線周波数コイルを更に含み、
    前記可搬式の構造は、
    前記B磁石、前記第1のラミネートパネル、前記第2のラミネートパネル、及び前記少なくとも1つの無線周波数コイルに給電するように構成される、1つ又はそれよりも多くのパワーコンポーネントと、
    前記所定のパルスシーケンスに従って当該低磁場MRIシステムのコンポーネントを制御するように構成されるコンソールとを収容する、
    請求項8に記載の低磁場MRIシステム。
  20. 前記少なくとも1つの無線周波数コイルは、前記視野から放射される磁気共鳴信号に応答するように構成される少なくとも1つの受信コイルを含む、請求項19に記載の低磁場MRIシステム。
  21. 前記少なくとも1つの受信コイルによって受信される前記磁気共鳴信号内のノイズを抑制するために使用される1つ又はそれよりも多くのノイズ信号を取得するよう、前記視野の外側で前記視野の近接して位置付けられる、少なくとも1つの補助センサを含む、請求項20に記載の低磁場MRIシステム。
  22. 前記コンソールは、ユーザが前記可搬式の構造にある当該低磁場MRIシステムを作動させるのを可能にする、ユーザインターフェースを含む、請求項19に記載の低磁場MRIシステム。
  23. 前記第1のラミネートパネル及び前記第2のラミネートパネルは、それぞれ、約20.32cm×20.32cm以上の寸法を有する、請求項8に記載の低磁場MRIシステム。
  24. 前記第1のラミネートパネル及び前記第2のラミネートパネルは、それぞれ、約40.64cm×40.64cm以上の寸法を有する、
    請求項23に記載の低磁場MRIシステム。
  25. 前記第1のラミネートパネル及び前記第2のラミネートパネルは、それぞれ、約55.88cm×55.88cm以上の寸法を有する、
    請求項24に記載の低磁場MRIシステム。
  26. 少なくとも1つの第1の巻回Bコイル及び少なくとも1つの第2の巻回Bコイルは、それぞれ、約25.4cm以上であり且つ約127cm以下である内径と、約38.1cm以上であり且つ約203.2cm以下である外径とを有する、請求項8に記載の低磁場MRIシステム。
  27. 前記少なくとも1つの第1の巻回Bコイル及び前記少なくとも1つの第2の巻回Bコイルは、少なくとも100回の巻きを有する銅導体で巻回される、請求項26に記載の低磁場MRIシステム。
  28. 前記第1のラミネートパネルは、前記第1のラミネートパネルの少なくとも4個の別個のラミネート層の上に形成された第1の複数のパターン化されたBコイルを含み、前記第2のラミネートパネルは、前記第2のラミネートパネルの少なくとも4個の別個のラミネート層の上に形成された第2の複数のパターン化されたBコイルを含む、請求項4に記載の低磁場MRIシステム。
  29. 前記第1のラミネートパネルは、前記第1のラミネートパネルの少なくとも10個の別個のラミネート層の上に形成された第1の複数のパターン化されたBコイルを含み、前記第2のラミネートパネルは、前記第2のラミネートパネルの少なくとも10個の別個のラミネート層の上に形成された第2の複数のパターン化されたBコイルを含む、
    請求項4に記載の低磁場MRIシステム。
  30. 前記x勾配コイルは、化学エッチングを介して、前記少なくとも1つのラミネートパネルの複数の層の上に形成され、
    前記y勾配コイルは、化学エッチングを介して、前記少なくとも1つのラミネートパネルの複数の層の上に形成され、
    前記z勾配コイルは、化学エッチングを介して、前記少なくとも1つのラミネートパネルの複数の層の上に形成される、
    請求項6に記載の低磁場MRIシステム。
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