JP2011044701A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2011044701A
JP2011044701A JP2010164547A JP2010164547A JP2011044701A JP 2011044701 A JP2011044701 A JP 2011044701A JP 2010164547 A JP2010164547 A JP 2010164547A JP 2010164547 A JP2010164547 A JP 2010164547A JP 2011044701 A JP2011044701 A JP 2011044701A
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JP
Japan
Prior art keywords
transistor
signal
layer
circuit
electrode
Prior art date
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Withdrawn
Application number
JP2010164547A
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English (en)
Japanese (ja)
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JP2011044701A5 (enExample
Inventor
Atsushi Umezaki
敦司 梅崎
Akira Arasawa
亮 荒澤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2010164547A priority Critical patent/JP2011044701A/ja
Publication of JP2011044701A publication Critical patent/JP2011044701A/ja
Publication of JP2011044701A5 publication Critical patent/JP2011044701A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0202—Addressing of scan or signal lines
    • G09G2310/0213—Addressing of scan or signal lines controlling the sequence of the scanning lines with respect to the patterns to be displayed, e.g. to save power
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266—Details of drivers for scan electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
    • G09G3/344—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on particles moving in a fluid or in a gas, e.g. electrophoretic devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of El Displays (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Shift Register Type Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
JP2010164547A 2009-07-24 2010-07-22 半導体装置 Withdrawn JP2011044701A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010164547A JP2011044701A (ja) 2009-07-24 2010-07-22 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009172949 2009-07-24
JP2010164547A JP2011044701A (ja) 2009-07-24 2010-07-22 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2013148115A Division JP2014013391A (ja) 2009-07-24 2013-07-17 半導体装置
JP2015078888A Division JP6084997B2 (ja) 2009-07-24 2015-04-08 半導体装置

Publications (2)

Publication Number Publication Date
JP2011044701A true JP2011044701A (ja) 2011-03-03
JP2011044701A5 JP2011044701A5 (enExample) 2013-08-29

Family

ID=43496904

Family Applications (10)

Application Number Title Priority Date Filing Date
JP2010164547A Withdrawn JP2011044701A (ja) 2009-07-24 2010-07-22 半導体装置
JP2013148115A Withdrawn JP2014013391A (ja) 2009-07-24 2013-07-17 半導体装置
JP2015078888A Expired - Fee Related JP6084997B2 (ja) 2009-07-24 2015-04-08 半導体装置
JP2016236485A Withdrawn JP2017085121A (ja) 2009-07-24 2016-12-06 半導体装置
JP2018074360A Withdrawn JP2018152569A (ja) 2009-07-24 2018-04-09 半導体装置
JP2019161947A Withdrawn JP2020017744A (ja) 2009-07-24 2019-09-05 半導体装置
JP2021047155A Active JP7237107B2 (ja) 2009-07-24 2021-03-22 半導体装置
JP2023029509A Withdrawn JP2023081905A (ja) 2009-07-24 2023-02-28 半導体装置
JP2024189688A Active JP7749094B2 (ja) 2009-07-24 2024-10-29 半導体装置
JP2025157112A Pending JP2026004368A (ja) 2009-07-24 2025-09-22 半導体装置

Family Applications After (9)

Application Number Title Priority Date Filing Date
JP2013148115A Withdrawn JP2014013391A (ja) 2009-07-24 2013-07-17 半導体装置
JP2015078888A Expired - Fee Related JP6084997B2 (ja) 2009-07-24 2015-04-08 半導体装置
JP2016236485A Withdrawn JP2017085121A (ja) 2009-07-24 2016-12-06 半導体装置
JP2018074360A Withdrawn JP2018152569A (ja) 2009-07-24 2018-04-09 半導体装置
JP2019161947A Withdrawn JP2020017744A (ja) 2009-07-24 2019-09-05 半導体装置
JP2021047155A Active JP7237107B2 (ja) 2009-07-24 2021-03-22 半導体装置
JP2023029509A Withdrawn JP2023081905A (ja) 2009-07-24 2023-02-28 半導体装置
JP2024189688A Active JP7749094B2 (ja) 2009-07-24 2024-10-29 半導体装置
JP2025157112A Pending JP2026004368A (ja) 2009-07-24 2025-09-22 半導体装置

Country Status (5)

Country Link
US (8) US9779679B2 (enExample)
JP (10) JP2011044701A (enExample)
KR (2) KR101785992B1 (enExample)
TW (8) TWI698854B (enExample)
WO (1) WO2011010546A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140094321A (ko) * 2013-01-22 2014-07-30 엘지디스플레이 주식회사 표시장치
CN105517253A (zh) * 2016-01-27 2016-04-20 福州大学 一种复合辅助绕组TiBuck-Flyback单级LED驱动电路
JP2019091904A (ja) * 2014-03-07 2019-06-13 株式会社半導体エネルギー研究所 半導体装置
JP2019195064A (ja) * 2013-04-04 2019-11-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2021096430A (ja) * 2019-12-19 2021-06-24 株式会社ジャパンディスプレイ 表示装置
JP2022081497A (ja) * 2009-08-27 2022-05-31 株式会社半導体エネルギー研究所 半導体装置
JP2025065292A (ja) * 2011-12-05 2025-04-17 株式会社半導体エネルギー研究所 半導体装置

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WO2011108367A1 (en) 2010-03-02 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Boosting circuit and rfid tag including boosting circuit
JP6126775B2 (ja) 2010-06-25 2017-05-10 株式会社半導体エネルギー研究所 表示装置
KR101320787B1 (ko) * 2010-07-21 2013-10-23 샤프 가부시키가이샤 기판 및 그 제조방법, 표시장치
US8854220B1 (en) * 2010-08-30 2014-10-07 Exelis, Inc. Indicating desiccant in night vision goggles
KR101952570B1 (ko) 2011-05-13 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102789808B (zh) 2011-05-20 2018-03-06 株式会社半导体能源研究所 存储器装置和用于驱动存储器装置的方法
WO2013182940A1 (en) 2012-06-04 2013-12-12 Koninklijke Philips N.V. Liob based hair cutting device
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
US8937307B2 (en) * 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
JP6521794B2 (ja) 2014-09-03 2019-05-29 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US9640228B2 (en) * 2014-12-12 2017-05-02 Globalfoundries Inc. CMOS device with reading circuit
US10170635B2 (en) * 2015-12-09 2019-01-01 Ricoh Company, Ltd. Semiconductor device, display device, display apparatus, and system
US10333004B2 (en) * 2016-03-18 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module and electronic device
JP7126823B2 (ja) 2016-12-23 2022-08-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10597158B2 (en) * 2017-08-02 2020-03-24 Panasonic Avionics Corporation Device for use in vehicle
CN107863057B (zh) * 2017-10-31 2020-12-18 上海天马微电子有限公司 一种移位寄存器、其驱动方法、驱动控制电路及相关装置
US12223915B2 (en) * 2023-03-23 2025-02-11 Samsung Display Co., Ltd. Pixel and gate driving circuit

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JP2005189819A (ja) * 2003-12-05 2005-07-14 Hitachi Ltd 走査線選択回路及びそれを用いた表示装置
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