JP2011044701A - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP2011044701A
JP2011044701A JP2010164547A JP2010164547A JP2011044701A JP 2011044701 A JP2011044701 A JP 2011044701A JP 2010164547 A JP2010164547 A JP 2010164547A JP 2010164547 A JP2010164547 A JP 2010164547A JP 2011044701 A JP2011044701 A JP 2011044701A
Authority
JP
Japan
Prior art keywords
transistor
signal
layer
circuit
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2010164547A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011044701A5 (enExample
Inventor
Atsushi Umezaki
敦司 梅崎
Akira Arasawa
亮 荒澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2010164547A priority Critical patent/JP2011044701A/ja
Publication of JP2011044701A publication Critical patent/JP2011044701A/ja
Publication of JP2011044701A5 publication Critical patent/JP2011044701A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0202—Addressing of scan or signal lines
    • G09G2310/0213—Addressing of scan or signal lines controlling the sequence of the scanning lines with respect to the patterns to be displayed, e.g. to save power
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266—Details of drivers for scan electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
    • G09G3/344—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on particles moving in a fluid or in a gas, e.g. electrophoretic devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of El Displays (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Shift Register Type Memory (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
JP2010164547A 2009-07-24 2010-07-22 半導体装置 Withdrawn JP2011044701A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010164547A JP2011044701A (ja) 2009-07-24 2010-07-22 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009172949 2009-07-24
JP2010164547A JP2011044701A (ja) 2009-07-24 2010-07-22 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2013148115A Division JP2014013391A (ja) 2009-07-24 2013-07-17 半導体装置
JP2015078888A Division JP6084997B2 (ja) 2009-07-24 2015-04-08 半導体装置

Publications (2)

Publication Number Publication Date
JP2011044701A true JP2011044701A (ja) 2011-03-03
JP2011044701A5 JP2011044701A5 (enExample) 2013-08-29

Family

ID=43496904

Family Applications (9)

Application Number Title Priority Date Filing Date
JP2010164547A Withdrawn JP2011044701A (ja) 2009-07-24 2010-07-22 半導体装置
JP2013148115A Withdrawn JP2014013391A (ja) 2009-07-24 2013-07-17 半導体装置
JP2015078888A Expired - Fee Related JP6084997B2 (ja) 2009-07-24 2015-04-08 半導体装置
JP2016236485A Withdrawn JP2017085121A (ja) 2009-07-24 2016-12-06 半導体装置
JP2018074360A Withdrawn JP2018152569A (ja) 2009-07-24 2018-04-09 半導体装置
JP2019161947A Withdrawn JP2020017744A (ja) 2009-07-24 2019-09-05 半導体装置
JP2021047155A Active JP7237107B2 (ja) 2009-07-24 2021-03-22 半導体装置
JP2023029509A Withdrawn JP2023081905A (ja) 2009-07-24 2023-02-28 半導体装置
JP2024189688A Active JP7749094B2 (ja) 2009-07-24 2024-10-29 半導体装置

Family Applications After (8)

Application Number Title Priority Date Filing Date
JP2013148115A Withdrawn JP2014013391A (ja) 2009-07-24 2013-07-17 半導体装置
JP2015078888A Expired - Fee Related JP6084997B2 (ja) 2009-07-24 2015-04-08 半導体装置
JP2016236485A Withdrawn JP2017085121A (ja) 2009-07-24 2016-12-06 半導体装置
JP2018074360A Withdrawn JP2018152569A (ja) 2009-07-24 2018-04-09 半導体装置
JP2019161947A Withdrawn JP2020017744A (ja) 2009-07-24 2019-09-05 半導体装置
JP2021047155A Active JP7237107B2 (ja) 2009-07-24 2021-03-22 半導体装置
JP2023029509A Withdrawn JP2023081905A (ja) 2009-07-24 2023-02-28 半導体装置
JP2024189688A Active JP7749094B2 (ja) 2009-07-24 2024-10-29 半導体装置

Country Status (5)

Country Link
US (7) US9779679B2 (enExample)
JP (9) JP2011044701A (enExample)
KR (2) KR101785992B1 (enExample)
TW (7) TWI489429B (enExample)
WO (1) WO2011010546A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140094321A (ko) * 2013-01-22 2014-07-30 엘지디스플레이 주식회사 표시장치
CN105517253A (zh) * 2016-01-27 2016-04-20 福州大学 一种复合辅助绕组TiBuck-Flyback单级LED驱动电路
JP2019091904A (ja) * 2014-03-07 2019-06-13 株式会社半導体エネルギー研究所 半導体装置
JP2019195064A (ja) * 2013-04-04 2019-11-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2021096430A (ja) * 2019-12-19 2021-06-24 株式会社ジャパンディスプレイ 表示装置
JP2022081497A (ja) * 2009-08-27 2022-05-31 株式会社半導体エネルギー研究所 半導体装置
JP2025065292A (ja) * 2011-12-05 2025-04-17 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101817926B1 (ko) 2010-03-02 2018-01-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 승압 회로 및 승압 회로를 포함하는 ｒｆｉｄ 태그
JP6126775B2 (ja) 2010-06-25 2017-05-10 株式会社半導体エネルギー研究所 表示装置
CN103026398B (zh) * 2010-07-21 2014-07-09 夏普株式会社 基板及其制造方法、显示装置
US8854220B1 (en) * 2010-08-30 2014-10-07 Exelis, Inc. Indicating desiccant in night vision goggles
KR101952570B1 (ko) 2011-05-13 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102789808B (zh) 2011-05-20 2018-03-06 株式会社半导体能源研究所 存储器装置和用于驱动存储器装置的方法
RU2641834C2 (ru) 2012-06-04 2018-01-22 Конинклейке Филипс Н.В. Устройство для срезания волос на основе лазерно-стимулированного оптического разрушения (liob)
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
US8937307B2 (en) * 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
JP6521794B2 (ja) 2014-09-03 2019-05-29 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US9640228B2 (en) * 2014-12-12 2017-05-02 Globalfoundries Inc. CMOS device with reading circuit
US10170635B2 (en) * 2015-12-09 2019-01-01 Ricoh Company, Ltd. Semiconductor device, display device, display apparatus, and system
US10333004B2 (en) * 2016-03-18 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module and electronic device
US10692994B2 (en) 2016-12-23 2020-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10597158B2 (en) * 2017-08-02 2020-03-24 Panasonic Avionics Corporation Device for use in vehicle
CN107863057B (zh) * 2017-10-31 2020-12-18 上海天马微电子有限公司 一种移位寄存器、其驱动方法、驱动控制电路及相关装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5125580B1 (enExample) * 1970-08-18 1976-07-31
JPH02125525A (ja) * 1988-11-04 1990-05-14 Nec Corp 半導体装置
JPH04298895A (ja) * 1991-03-26 1992-10-22 Nec Ic Microcomput Syst Ltd 半導体記憶回路
JP2002311879A (ja) * 2001-04-09 2002-10-25 Sharp Corp 走査信号分岐回路およびアクティブマトリクス基板
JP2005189819A (ja) * 2003-12-05 2005-07-14 Hitachi Ltd 走査線選択回路及びそれを用いた表示装置
JP2005352147A (ja) * 2004-06-10 2005-12-22 Tohoku Pioneer Corp アクティブマトリクス型発光表示パネル
JP2008083692A (ja) * 2006-08-31 2008-04-10 Semiconductor Energy Lab Co Ltd 液晶表示装置

Family Cites Families (168)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JP2776083B2 (ja) 1991-08-23 1998-07-16 日本電気株式会社 液晶表示装置およびその製造方法
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JPH07235678A (ja) 1994-02-22 1995-09-05 Hitachi Ltd 薄膜半導体装置及びその製造方法
FR2720185B1 (fr) 1994-05-17 1996-07-05 Thomson Lcd Registre à décalage utilisant des transistors M.I.S. de même polarité.
US6919874B1 (en) 1994-05-17 2005-07-19 Thales Avionics Lcd S.A. Shift register using M.I.S. transistors and supplementary column
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) * 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
US5612228A (en) 1996-04-24 1997-03-18 Motorola Method of making CMOS with organic and inorganic semiconducting region
JPH1186586A (ja) 1997-09-03 1999-03-30 Furontetsuku:Kk シフトレジスタ装置および表示装置
JP3972270B2 (ja) 1998-04-07 2007-09-05 ソニー株式会社 画素駆動回路および駆動回路一体型画素集積装置
US6528816B1 (en) 1998-06-19 2003-03-04 Thomas Jackson Integrated inorganic/organic complementary thin-film transistor circuit and a method for its production
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) * 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) * 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP3394483B2 (ja) 1999-11-16 2003-04-07 鹿児島日本電気株式会社 薄膜トランジスタ基板およびその製造方法
KR100698239B1 (ko) * 2000-08-30 2007-03-21 엘지.필립스 엘시디 주식회사 쉬프트 레지스터 회로
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) * 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) * 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
KR100776768B1 (ko) 2001-07-21 2007-11-16 삼성전자주식회사 액정표시패널용 기판 및 그 제조방법
KR100803163B1 (ko) * 2001-09-03 2008-02-14 삼성전자주식회사 액정표시장치
JP4090716B2 (ja) * 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US7061014B2 (en) * 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP2003243658A (ja) 2002-02-12 2003-08-29 Seiko Epson Corp 半導体装置、電気光学装置、電子機器、半導体装置の製造方法、電気光学装置の製造方法
JP4083486B2 (ja) * 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
US7049190B2 (en) * 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP2003273361A (ja) 2002-03-15 2003-09-26 Sharp Corp 半導体装置およびその製造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) * 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) * 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4339103B2 (ja) 2002-12-25 2009-10-07 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
US7319452B2 (en) * 2003-03-25 2008-01-15 Samsung Electronics Co., Ltd. Shift register and display device having the same
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) * 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP4413573B2 (ja) 2003-10-16 2010-02-10 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
KR100970958B1 (ko) * 2003-11-04 2010-07-20 삼성전자주식회사 터치 스크린 기능을 갖는 액정 표시 장치 및 그의 제조 방법
CN100385478C (zh) 2003-12-27 2008-04-30 Lg.菲利浦Lcd株式会社 包括移位寄存器的驱动电路以及使用其的平板显示器件
US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
KR101019337B1 (ko) 2004-03-12 2011-03-07 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
JP2005285168A (ja) 2004-03-29 2005-10-13 Alps Electric Co Ltd シフトレジスタ及びそれを用いた液晶駆動回路
TW200600916A (en) * 2004-05-27 2006-01-01 Alps Electric Co Ltd Color liquid crystal display device
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
TWI393093B (zh) 2004-06-30 2013-04-11 Samsung Display Co Ltd 移位暫存器，具有該移位暫存器之顯示裝置，及其驅動方法
JP2006100760A (ja) * 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) * 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
KR101074402B1 (ko) * 2004-09-23 2011-10-17 엘지디스플레이 주식회사 액정표시장치 및 그의 구동방법
JP2006106394A (ja) * 2004-10-06 2006-04-20 Alps Electric Co Ltd 液晶駆動回路および液晶表示装置
US7298084B2 (en) * 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
CN101057338B (zh) * 2004-11-10 2011-03-16 佳能株式会社 采用无定形氧化物的场效应晶体管
US7453065B2 (en) * 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7791072B2 (en) * 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
CA2585190A1 (en) * 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
CN101057333B (zh) * 2004-11-10 2011-11-16 佳能株式会社 发光器件
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
KR100662790B1 (ko) * 2004-12-28 2007-01-02 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI569441B (zh) * 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI472037B (zh) * 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) * 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
JP2006278621A (ja) 2005-03-29 2006-10-12 Toppan Printing Co Ltd トランジスタ論理回路の製造方法
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
KR20060123913A (ko) * 2005-05-30 2006-12-05 삼성전자주식회사 쉬프트 레지스터 및 이를 갖는 표시장치
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) * 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) * 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
US7623097B2 (en) * 2005-08-17 2009-11-24 Samsung Mobile Display Co., Ltd. Emission control driver and organic light emitting display device having the same and a logical or circuit for an emission control driver for outputting an emission control signal
JP2007059128A (ja) * 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP5116225B2 (ja) * 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4280736B2 (ja) * 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP2007073705A (ja) * 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
JP5078246B2 (ja) * 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
EP1998374A3 (en) * 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
CN101283388B (zh) 2005-10-05 2011-04-13 出光兴产株式会社 Tft基板及tft基板的制造方法
JP5427340B2 (ja) 2005-10-14 2014-02-26 株式会社半導体エネルギー研究所 半導体装置
EP1935027B1 (en) 2005-10-14 2017-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9153341B2 (en) * 2005-10-18 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Shift register, semiconductor device, display device, and electronic device
JP5037808B2 (ja) * 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR101358954B1 (ko) * 2005-11-15 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 다이오드 및 액티브 매트릭스 표시장치
TWI292281B (en) * 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) * 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) * 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) * 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR100786467B1 (ko) * 2006-03-29 2007-12-17 삼성에스디아이 주식회사 주사구동회로 및 이를 이용한 유기발광표시장치
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP2007317288A (ja) * 2006-05-25 2007-12-06 Mitsubishi Electric Corp シフトレジスタ回路およびそれを備える画像表示装置
US8330492B2 (en) * 2006-06-02 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US7443202B2 (en) 2006-06-02 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic apparatus having the same
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4241850B2 (ja) * 2006-07-03 2009-03-18 エプソンイメージングデバイス株式会社 液晶装置、液晶装置の駆動方法、および電子機器
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) * 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
EP1895545B1 (en) * 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP4332545B2 (ja) * 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) * 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) * 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP5116277B2 (ja) 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
TWI585730B (zh) * 2006-09-29 2017-06-01 半導體能源研究所股份有限公司 顯示裝置和電子裝置
JP4932415B2 (ja) * 2006-09-29 2012-05-16 株式会社半導体エネルギー研究所 半導体装置
JP4990034B2 (ja) * 2006-10-03 2012-08-01 三菱電機株式会社 シフトレジスタ回路およびそれを備える画像表示装置
US7622371B2 (en) * 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
TWI341505B (en) * 2006-11-27 2011-05-01 Chimei Innolux Corp Liquid crystal panel and driving method thereof
US7772021B2 (en) * 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) * 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) * 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) * 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
JP5090008B2 (ja) 2007-02-07 2012-12-05 三菱電機株式会社 半導体装置およびシフトレジスタ回路
KR101375863B1 (ko) 2007-03-08 2014-03-17 삼성디스플레이 주식회사 표시장치 및 이의 구동방법
KR100851215B1 (ko) * 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
TWI453711B (zh) * 2007-03-21 2014-09-21 Semiconductor Energy Lab 顯示裝置
US8552948B2 (en) 2007-04-05 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Display device comprising threshold control circuit
JP5042077B2 (ja) 2007-04-06 2012-10-03 株式会社半導体エネルギー研究所 表示装置
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
JP2008276849A (ja) * 2007-04-27 2008-11-13 Mitsubishi Electric Corp 画像表示装置および半導体装置
JP2008287134A (ja) * 2007-05-21 2008-11-27 Seiko Epson Corp パルス出力回路、シフトレジスタ、走査線駆動回路、データ線駆動回路、電気光学装置及び電子機器
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
KR100968720B1 (ko) * 2007-06-29 2010-07-08 소니 주식회사 액정 장치, 및 전자기기
KR101055211B1 (ko) * 2007-07-11 2011-08-08 엘지디스플레이 주식회사 액정표시장치의 제조방법
JP2009021477A (ja) 2007-07-13 2009-01-29 Sony Corp 半導体装置およびその製造方法、ならびに表示装置およびその製造方法
TWI346391B (en) * 2007-08-20 2011-08-01 Au Optronics Corp Liquid crystal display device and the manufacturing method thereof
WO2009034750A1 (ja) * 2007-09-12 2009-03-19 Sharp Kabushiki Kaisha シフトレジスタ
JP5354999B2 (ja) 2007-09-26 2013-11-27 キヤノン株式会社 電界効果型トランジスタの製造方法
JP2009099847A (ja) 2007-10-18 2009-05-07 Canon Inc 薄膜トランジスタとその製造方法及び表示装置
JP4444325B2 (ja) 2007-10-19 2010-03-31 シャープ株式会社 画像表示装置
US7824939B2 (en) * 2007-10-23 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device comprising separated and electrically connected source wiring layers
TW200921226A (en) 2007-11-06 2009-05-16 Wintek Corp Panel structure and manufacture method thereof
JP5489446B2 (ja) 2007-11-15 2014-05-14 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
US8202365B2 (en) * 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP5412444B2 (ja) * 2008-02-08 2014-02-12 エイディシィ・テレコミュニケーションズ・インコーポレイテッド ライセンスを取得した無線周波数スペクトルおよびセッション開始プロトコルを使用してセルラーワイヤレスサービスを提供するための企業モバイルネットワーク
WO2009104306A1 (ja) * 2008-02-19 2009-08-27 シャープ株式会社 表示装置および表示装置の駆動方法
TWI380274B (en) 2008-02-21 2012-12-21 Chunghwa Picture Tubes Ltd Shift register and liquid crystal display (lcd)
TWI328788B (en) * 2008-03-11 2010-08-11 Au Optronics Corp Gate driver-on-array and method of making the same
KR100941836B1 (ko) * 2008-05-19 2010-02-11 삼성모바일디스플레이주식회사 유기 전계 발광표시장치
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
KR101731772B1 (ko) * 2008-11-28 2017-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 표시 장치를 포함하는 전자 장치
KR101073301B1 (ko) 2009-07-15 2011-10-12 삼성모바일디스플레이주식회사 유기 전계발광 표시장치 및 그 제조방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5125580B1 (enExample) * 1970-08-18 1976-07-31
JPH02125525A (ja) * 1988-11-04 1990-05-14 Nec Corp 半導体装置
JPH04298895A (ja) * 1991-03-26 1992-10-22 Nec Ic Microcomput Syst Ltd 半導体記憶回路
JP2002311879A (ja) * 2001-04-09 2002-10-25 Sharp Corp 走査信号分岐回路およびアクティブマトリクス基板
JP2005189819A (ja) * 2003-12-05 2005-07-14 Hitachi Ltd 走査線選択回路及びそれを用いた表示装置
JP2005352147A (ja) * 2004-06-10 2005-12-22 Tohoku Pioneer Corp アクティブマトリクス型発光表示パネル
JP2008083692A (ja) * 2006-08-31 2008-04-10 Semiconductor Energy Lab Co Ltd 液晶表示装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022081497A (ja) * 2009-08-27 2022-05-31 株式会社半導体エネルギー研究所 半導体装置
US12198941B2 (en) 2009-08-27 2025-01-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US11923206B2 (en) 2009-08-27 2024-03-05 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP7254223B2 (ja) 2009-08-27 2023-04-07 株式会社半導体エネルギー研究所 半導体装置
JP2025065292A (ja) * 2011-12-05 2025-04-17 株式会社半導体エネルギー研究所 半導体装置
KR102018114B1 (ko) * 2013-01-22 2019-09-04 엘지디스플레이 주식회사 표시장치
KR20140094321A (ko) * 2013-01-22 2014-07-30 엘지디스플레이 주식회사 표시장치
US10991731B2 (en) 2013-04-04 2021-04-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2019195064A (ja) * 2013-04-04 2019-11-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US11495626B2 (en) 2013-04-04 2022-11-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US12051703B2 (en) 2013-04-04 2024-07-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2019091904A (ja) * 2014-03-07 2019-06-13 株式会社半導体エネルギー研究所 半導体装置
CN105517253B (zh) * 2016-01-27 2017-06-06 福州大学 一种复合辅助绕组TiBuck‑Flyback单级LED驱动电路
CN105517253A (zh) * 2016-01-27 2016-04-20 福州大学 一种复合辅助绕组TiBuck-Flyback单级LED驱动电路
JP2021096430A (ja) * 2019-12-19 2021-06-24 株式会社ジャパンディスプレイ 表示装置
JP7516039B2 (ja) 2019-12-19 2024-07-16 株式会社ジャパンディスプレイ 表示装置

Also Published As

Publication number Publication date
KR101904811B1 (ko) 2018-10-05
TW201528245A (zh) 2015-07-16
JP2023081905A (ja) 2023-06-13
TW202036528A (zh) 2020-10-01
JP2017085121A (ja) 2017-05-18
TWI834193B (zh) 2024-03-01
TWI622975B (zh) 2018-05-01
US12183302B2 (en) 2024-12-31
TWI768348B (zh) 2022-06-21
US20180226040A1 (en) 2018-08-09
US20250124890A1 (en) 2025-04-17
JP2021119380A (ja) 2021-08-12
US20210118392A1 (en) 2021-04-22
US20230290317A1 (en) 2023-09-14
KR20170117233A (ko) 2017-10-20
JP2018152569A (ja) 2018-09-27
TW202422525A (zh) 2024-06-01
US20110018915A1 (en) 2011-01-27
JP7237107B2 (ja) 2023-03-10
US10810961B2 (en) 2020-10-20
WO2011010546A1 (en) 2011-01-27
KR20120040716A (ko) 2012-04-27
JP2025016610A (ja) 2025-02-04
TWI658455B (zh) 2019-05-01
TWI570697B (zh) 2017-02-11
JP6084997B2 (ja) 2017-02-22
TW202242843A (zh) 2022-11-01
US20170132985A1 (en) 2017-05-11
TWI698854B (zh) 2020-07-11
JP2020017744A (ja) 2020-01-30
JP2014013391A (ja) 2014-01-23
KR101785992B1 (ko) 2017-10-18
US11663989B2 (en) 2023-05-30
JP7749094B2 (ja) 2025-10-03
TW201937475A (zh) 2019-09-16
TW201832212A (zh) 2018-09-01
US9779679B2 (en) 2017-10-03
US9875713B2 (en) 2018-01-23
US11373615B2 (en) 2022-06-28
TW201709193A (zh) 2017-03-01
US20220406268A1 (en) 2022-12-22
TW201117161A (en) 2011-05-16
TWI489429B (zh) 2015-06-21
JP2015181165A (ja) 2015-10-15

Similar Documents

Publication Publication Date Title
JP7749094B2 (ja) 半導体装置
TWI671911B (zh) 半導體裝置及其製造方法
KR102481935B1 (ko) 반도체 장치 및 반도체 장치의 제작 방법
TWI899830B (zh) 半導體裝置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130717

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130717

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20130717

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20131015

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140722

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140820

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20150203

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20150408