JP2011009697A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2011009697A JP2011009697A JP2010048937A JP2010048937A JP2011009697A JP 2011009697 A JP2011009697 A JP 2011009697A JP 2010048937 A JP2010048937 A JP 2010048937A JP 2010048937 A JP2010048937 A JP 2010048937A JP 2011009697 A JP2011009697 A JP 2011009697A
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Images
Classifications
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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Abstract
【解決手段】基板上に、ゲート電極として機能する第1の導電層を形成する工程と、第1の導電層を覆うように第1の絶縁層を形成する工程と、第1の導電層と一部が重畳するように、第1の絶縁層上に半導体層を形成する工程と、半導体層と電気的に接続されるように第2の導電層を形成する工程と、半導体層および第2の導電層を覆う第2の絶縁層を形成する工程と、第2の導電層と電気的に接続される第3の導電層を形成する工程と、半導体層を形成する工程の後、第2の絶縁層を形成する工程の前の第1の熱処理工程と、第2の絶縁層を形成する工程の後の第2の熱処理工程と、を有する。
【選択図】図2
Description
本実施の形態では、半導体装置に用いられる半導体素子の作製方法の一例について、図面を参照して説明する。
本実施の形態では、半導体装置に用いられる半導体素子の作製方法につき、上記実施の形態と異なる一例について図面を参照して説明する。なお、本実施の形態における半導体装置の作製工程は、多くの部分で先の実施の形態と共通している。したがって、以下においては、重複する部分の説明は省略し、異なる点について詳細に説明する。
本実施の形態では、半導体装置の一例であるアクティブマトリクス基板の作製工程について、図面を用いて説明する。なお、本実施の形態で示す作製工程は、多くの部分で先の実施の形態と共通している。したがって、以下においては、重複する部分の説明は省略し、異なる点について詳細に説明する。なお、以下の説明において、図5、図6は断面図を示しており、図7は平面図を示している。また、図5および図6のA1−A2、B1−B2はそれぞれ、図7のA1−A2、B1−B2に対応する領域を示す。また、本実施の形態においてA1−A2に示す半導体素子は、先の実施の形態(実施の形態2)において示した半導体素子と類似する。
本実施の形態では、薄膜トランジスタを作製し、該薄膜トランジスタを画素部や駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製する例について説明する。また、駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本実施の形態では、図10を参照して半導体装置の一例であるアクティブマトリクス型の電子ペーパーについて説明する。半導体装置に用いられる薄膜トランジスタ650は、先の実施の形態において示したトランジスタなどと同様に作製することができる。
本実施の形態では、半導体装置の一例である発光表示装置について説明する。ここでは、表示素子としてエレクトロルミネッセンスを利用する発光素子を用いる場合について示す。なお、エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって区別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
半導体装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図13、図14に示す。
半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
層間絶縁層の作製の際の酸素流量について調査した。成膜の際の流量以外の層間絶縁層の条件(層間絶縁層のパラメータ、成膜条件等)は同じとした。具体的には、層間絶縁層として、SiO2ターゲットを用いたスパッタ法(RFスパッタ法)による300nmの厚さの酸化シリコン膜を適用した。流量に関しては、成膜雰囲気のアルゴンの流量を40sccm、酸素の流量を10sccmとした条件(条件1)、アルゴンの流量を30sccm、酸素の流量を20sccmとした条件(条件2)、または、アルゴンの流量を20sccm、酸素の流量を30sccmとした条件(条件3)の3条件について調査を行った。なお、成膜の際の基板温度は100℃、チャンバー内の圧力は0.4Paであった。
次に、層間絶縁層として機能する絶縁層の成膜の際の圧力について調査した。成膜の際の圧力以外の層間絶縁層の条件(層間絶縁層のパラメータ、成膜条件等)は同じとした。具体的には、SiO2ターゲットを用いたスパッタ法(RFスパッタ法)による300nmの厚さの酸化シリコン膜を適用した。また、アルゴンと酸素の流量比を一定(Ar:O2=4:1)に保ったまま、チャンバー内の圧力を0.2Pa、0.4Pa、0.8Pa、1.6Paと変更した4条件につき調査を行った。なお、成膜の際の基板温度は100℃であった。
層間絶縁層の作製の際の基板温度について調査した。ここでは、層間絶縁層として、SiO2ターゲットを用いたスパッタ法(RFスパッタ法)による300nmの厚さの酸化シリコン膜を適用した。層間絶縁層の作製条件について、チャンバー内の圧力は0.4Pa、成膜雰囲気のアルゴンの流量を40sccm、酸素の流量を10sccmとした。成膜の際の基板温度については、100℃、200℃、250℃と変更した3条件につき調査した。
層間絶縁層の作製の際のターゲットについて調査した。ここでは、層間絶縁層として、SiO2ターゲットを用いたスパッタ法(RFスパッタ法)による300nmの厚さの酸化シリコン膜、または、Siターゲットを用いたスパッタ法(RFスパッタ法)による300nmの厚さの酸化シリコン膜を適用した。
層間絶縁層の膜厚について調査した。膜厚以外の層間絶縁層の条件(層間絶縁層のパラメータ、成膜条件等)は同じとした。具体的には、上記と同様、SiO2ターゲットを用いたスパッタ法(RFスパッタ法)による300nmの厚さの酸化シリコン膜を適用した。膜厚は、200nm、300nm、400nmの3条件とした。
102 導電層
104 レジストマスク
106 導電層
108 絶縁層
110 半導体層
112 レジストマスク
114 半導体層
116 導電層
118 レジストマスク
120 レジストマスク
122 導電層
124 導電層
126 絶縁層
128 導電層
150 トランジスタ
200 基板
202 導電層
204 レジストマスク
206 導電層
208 絶縁層
210 導電層
212 レジストマスク
214 レジストマスク
216 導電層
218 導電層
220 半導体層
222 レジストマスク
224 半導体層
226 絶縁層
228 導電層
250 トランジスタ
300 基板
302 ゲート電極
304 容量配線
306 端子
308 ゲート絶縁層
310 ソース電極
312 ドレイン電極
314 接続電極
316 端子
318 半導体層
320 絶縁層
322 透明導電層
324 透明導電層
326 透明導電層
350 トランジスタ
602 基板
650 薄膜トランジスタ
660 電極層
670 電極層
680 球形粒子
682 充填材
701 TFT
702 発光素子
703 陰極
704 発光層
705 陽極
711 TFT
712 発光素子
713 陰極
714 発光層
715 陽極
716 遮蔽膜
717 導電膜
721 TFT
722 発光素子
723 陰極
724 発光層
725 陽極
727 導電膜
1000 携帯電話機
1001 筐体
1002 表示部
1003 操作ボタン
1004 外部接続ポート
1005 スピーカ
1006 マイク
2600 TFT基板
2601 対向基板
2602 シール材
2603 素子層
2604 液晶層
2605 着色層
2606 偏光板
2607 偏光板
2608 配線回路部
2609 フレキシブル配線基板
2610 冷陰極管
2611 反射板
2612 回路基板
2613 拡散板
2631 ポスター
2632 車内広告
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 薄膜トランジスタ
4011 薄膜トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 絶縁層
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 絶縁層
4033 絶縁層
4035 スペーサ
4501 基板
4502 画素部
4503a 信号線駆動回路
4503b 信号線駆動回路
4504a 走査線駆動回路
4504b 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 薄膜トランジスタ
4510 薄膜トランジスタ
4511 発光素子
4512 電界発光層
4513 電極層
4515 接続端子電極
4516 端子電極
4517 電極層
4518a FPC
4518b FPC
4519 異方性導電膜
4520 隔壁
680a 黒色領域
680b 白色領域
9400 通信装置
9401 筐体
9402 操作ボタン
9403 外部入力端子
9404 マイク
9405 スピーカ
9406 発光部
9410 表示装置
9411 筐体
9412 表示部
9413 操作ボタン
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
9881 筐体
9882 表示部
9883 表示部
9884 スピーカ部
9885 操作キー
9886 記録媒体挿入部
9887 接続端子
9888 センサ
9889 マイクロフォン
9890 LEDランプ
9891 筐体
9893 連結部
9900 スロットマシン
9901 筐体
9903 表示部
Claims (9)
- 基板上に、ゲート電極として機能する第1の導電層を形成する工程と、
前記第1の導電層を覆うように第1の絶縁層を形成する工程と、
前記第1の導電層と一部が重畳するように、前記第1の絶縁層上に半導体層を形成する工程と、
前記半導体層と電気的に接続されるように第2の導電層を形成する工程と、
前記半導体層および前記第2の導電層を覆う第2の絶縁層を形成する工程と、
前記第2の導電層と電気的に接続される第3の導電層を形成する工程と、
前記半導体層を形成する工程の後、前記第2の絶縁層を形成する工程の前の第1の熱処理工程と、
前記第2の絶縁層を形成する工程の後の第2の熱処理工程と、を有することを特徴とする半導体装置の作製方法。 - 請求項1において、
前記半導体層として、インジウム、ガリウムおよび亜鉛を含む酸化物半導体層を形成することを特徴とする半導体装置の作製方法。 - 請求項1または請求項2において、
前記半導体層中の水素の濃度は、前記第2の絶縁層中の水素の濃度より高く、
前記半導体層中の窒素の濃度は、前記第2の絶縁層中の窒素の濃度より高いことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項3のいずれか一において、
前記第2の絶縁層の水素の濃度は1×1021atoms/cm3以下であり、
前記第2の絶縁層の窒素の濃度は1×1019atoms/cm3以下であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項4のいずれか一において、
少なくとも前記半導体層の前記第2の絶縁層が形成される表面の少なくとも一部において、前記半導体層と前記第2の導電層が電気的に接続するように、前記半導体層および前記第2の導電層を形成することを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項5のいずれか一において、
少なくとも前記半導体層の前記第1の絶縁層が形成される表面の少なくとも一部において、前記半導体層と前記第2の導電層が電気的に接続するように、前記半導体層および前記第2の導電層を形成することを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項6のいずれか一において、
前記第1の熱処理工程は、前記第2の導電層を形成する工程の後、前記第2の絶縁層を形成する工程の前に行われることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項7のいずれか一において、
前記第2の熱処理工程は、前記第3の導電層を形成する工程の後に行われることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項8のいずれか一において、
前記第1の熱処理工程の熱処理温度および前記第2の熱処理工程における熱処理温度は、400℃以下であることを特徴とする半導体装置の作製方法。
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