JP2012151443A - 薄膜トランジスター表示板およびその製造方法 - Google Patents
薄膜トランジスター表示板およびその製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000010408 film Substances 0.000 claims abstract description 203
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 98
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 98
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 239000001257 hydrogen Substances 0.000 claims abstract description 31
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 31
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000001681 protective effect Effects 0.000 claims description 38
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910007604 Zn—Sn—O Inorganic materials 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- 229910007611 Zn—In—O Inorganic materials 0.000 claims description 5
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Abstract
【解決手段】本発明の実施形態による薄膜トランジスター表示板は、絶縁基板と、前記絶縁基板の上に位置するゲート線と、前記ゲート線と交差するデータ線と、前記ゲート線およびデータ線と連結されている薄膜トランジスターと、前記薄膜トランジスターのゲート電極と前記薄膜トランジスターの半導体との間に位置するゲート絶縁膜と、前記薄膜トランジスターと連結されている画素電極と、前記画素電極と前記薄膜トランジスターとの間に位置する保護膜と、を備え、前記ゲート絶縁膜および前記保護膜のうちの少なくとも一方は、窒化シリコン膜を含み、前記窒化シリコン膜は、2×1022cm3以下または4atomic%以下にて水素を含む。
【選択図】図1
Description
124:ゲート電極
140:ゲート絶縁膜
154:酸化物半導体
173:ソース電極
175:ドレイン電極
191:画素電極
Claims (24)
- 絶縁基板と、
前記絶縁基板の上に位置するゲート線と、
前記ゲート線と交差するデータ線と、
半導体を含み、前記ゲート線およびデータ線と連結されている薄膜トランジスターと、
前記薄膜トランジスターのゲート電極と前記薄膜トランジスターの半導体との間に位置するゲート絶縁膜と、
前記薄膜トランジスターと連結されている画素電極と、
前記画素電極と前記薄膜トランジスターとの間に位置する保護膜と、
を備え、
前記ゲート絶縁膜および前記保護膜のうちの少なくとも一方は、窒化シリコン膜を含み、
前記窒化シリコン膜は、2×1022cm3以下または4atomic%以下にて水素を含む、薄膜トランジスター表示板。 - 前記窒化シリコン膜は、薄膜の密度が異なる第1の窒化シリコン膜および第2の窒化シリコン膜からなる、請求項1に記載の薄膜トランジスター表示板。
- 前記窒化シリコン膜の屈折率は、1.86〜2.0である、請求項1又は2に記載の薄膜トランジスター表示板。
- 前記第1の窒化シリコン膜は、前記第2の窒化シリコン膜よりも、前記半導体に隣接するように位置する、請求項2又は3のいずれかに記載の薄膜トランジスター表示板。
- 前記第1の窒化シリコン膜の密度が、前記第2の窒化シリコン膜の密度よりも高い、請求項2〜4のいずれかに記載の薄膜トランジスター表示板。
- 前記半導体は、酸化物半導体から形成され、
前記酸化物半導体は、亜鉛(Zn)、ガリウム(Ga)、錫(Sn)またはインジウム(In)を基本とする酸化物、これらの複合酸化物のうち、少なくとも1つを含む、請求項1〜5のいずれかに記載の薄膜トランジスター表示板。 - 前記半導体は、酸化物半導体から形成され、
前記酸化物半導体は、酸化亜鉛(ZnO)、インジウム−ガリウム−亜鉛酸化物(InGaZnO4)、インジウム−亜鉛酸化物(Zn−In−O)、または亜鉛−錫酸化物(Zn−Sn−O)のうち、少なくとも1つを含む、請求項1〜5のいずれかに記載の薄膜トランジスター表示板。 - 前記第1の窒化シリコン膜の密度は、前記第2の窒化シリコン膜の密度より低い、請求項2〜7のいずれかに記載の薄膜トランジスター表示板。
- 絶縁基板の上にゲート線を形成するステップと、
前記ゲート線と交差するデータ線を形成するステップと、
前記ゲート線およびデータ線と連結される薄膜トランジスターを形成するステップと、
前記薄膜トランジスターの上に保護膜を形成するステップと、
前記保護膜の上に位置し、且つ、前記薄膜トランジスターと連結される画素電極を形成するステップと、
を含み、
前記保護膜および前記薄膜トランジスターのゲート電極と半導体の間に位置するゲート絶縁膜のうちの少なくとも一つは、窒化シリコン膜を含み、
前記窒化シリコン膜は、蒸着チャンバーの圧力を1、500mTorr以下に維持し、且つ、N2/SiH4の流量比を80以上に維持して形成する、薄膜トランジスター表示板の製造方法。 - 前記窒化シリコン膜は、水素が2×1022cm3以下にて含まれるように形成する、請求項9に記載の薄膜トランジスター表示板の製造方法。
- 前記窒化シリコン膜は4atomic%以下の水素を含む、請求項9又は10に記載の薄膜トランジスター表示板の製造方法 。
- 前記窒化シリコン膜の屈折率は1.86〜2.0になるように形成する、請求項9〜11のいずれかに記載の薄膜トランジスター表示板の製造方法。
- 前記ゲート絶縁膜または前記保護膜は、密度が異なる第1の窒化シリコン膜および第2の窒化シリコン膜を含むように形成する、請求項9〜12のいずれかに記載の薄膜トランジスター表示板の製造方法。
- 前記第1の窒化シリコン膜の密度は、前記第2の窒化シリコン膜の密度より高い、請求項13に記載の薄膜トランジスター表示板の製造方法。
- 前記第1の窒化シリコン膜の密度は、前記第2の窒化シリコン膜の密度より低い、請求項13〜14に記載の薄膜トランジスター表示板の製造方法。
- 前記半導体は、酸化物半導体から形成する、請求項9〜15のいずれかに記載の薄膜トランジスター表示板の製造方法。
- 前記酸化物半導体は、亜鉛(Zn)、ガリウム(Ga)、錫(Sn)またはインジウム(In)を基本とする酸化物、これらの複合酸化物のうち、少なくとも1つを含む、請求項16に記載の薄膜トランジスター表示板の製造方法。
- 前記酸化物半導体は、酸化亜鉛(ZnO)、インジウム−ガリウム−亜鉛酸化物(InGaZnO4)、インジウム−亜鉛酸化物(Zn−In−O)、または亜鉛−錫酸化物(Zn−Sn−O)のうち、少なくとも1つを含む、請求項16〜17のいずれかに記載の薄膜トランジスター表示板の製造方法。
- 前記窒化シリコン膜は、ほぼ1.5×1022cm3の水素を含む、請求項1〜8のいずれかに記載の薄膜トランジスター表示板。
- 前記窒化シリコン膜は、ほぼ1.4×1022cm3の水素を含む、請求項1〜8のいずれかに記載の薄膜トランジスター表示板。
- 前記窒化シリコン膜は、ほぼ1.5×1022cm3の水素を含む、請求項9〜18のいずれかに記載の薄膜トランジスター表示板の製造方法。
- 前記窒化シリコン膜は、ほぼ1.4×1022cm3の水素を含む、請求項9〜18のいずれかに記載の薄膜トランジスター表示板の製造方法。
- 基板と、
前記基板上に形成されている制御電極、入力電極及び出力電極と、
前記制御電極、入力電極及び出力電極と連結されている半導体と、
前記制御電極と前記半導体との間に位置するゲート絶縁膜と
を備え、
前記ゲート絶縁膜は水素を2×1022cm3以下で含む窒化シリコン膜を含む、 薄膜トランジスター表示板。 - 前記窒化シリコン膜は密度が互いに異なる第1の窒化シリコン膜と第2の窒化シリコン膜とを含む、請求項23に記載の薄膜トランジスター表示板。
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KR10-2011-0005482 | 2011-01-19 | ||
KR1020110005482A KR101832361B1 (ko) | 2011-01-19 | 2011-01-19 | 박막 트랜지스터 표시판 및 그 제조 방법 |
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CN110429024B (zh) * | 2019-08-08 | 2022-04-15 | 京东方科技集团股份有限公司 | 层间绝缘层及薄膜晶体管的制备方法 |
WO2023184236A1 (zh) * | 2022-03-30 | 2023-10-05 | 京东方科技集团股份有限公司 | 金属氧化物薄膜晶体管、阵列基板及显示装置 |
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Also Published As
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CN102610618A (zh) | 2012-07-25 |
US20120181533A1 (en) | 2012-07-19 |
KR20120084133A (ko) | 2012-07-27 |
KR101832361B1 (ko) | 2018-04-16 |
JP5992675B2 (ja) | 2016-09-14 |
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