JP2014225625A - 薄膜トランジスタおよび表示装置 - Google Patents
薄膜トランジスタおよび表示装置 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 42
- 239000010408 film Substances 0.000 claims abstract description 146
- 239000004065 semiconductor Substances 0.000 claims abstract description 91
- 239000001257 hydrogen Substances 0.000 claims abstract description 36
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 36
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 8
- 229910052738 indium Inorganic materials 0.000 claims abstract description 7
- 229910052718 tin Inorganic materials 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 133
- 239000002184 metal Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 6
- 230000008859 change Effects 0.000 abstract description 8
- 238000009413 insulation Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 33
- 230000015572 biosynthetic process Effects 0.000 description 27
- 238000000034 method Methods 0.000 description 22
- 229910004298 SiO 2 Inorganic materials 0.000 description 17
- 239000000758 substrate Substances 0.000 description 15
- 239000011701 zinc Substances 0.000 description 14
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 230000001681 protective effect Effects 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 230000037230 mobility Effects 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】本発明の薄膜トランジスタは、ゲート電極と、チャネル層に用いられる単層の酸化物半導体層と、酸化物半導体層の表面を保護するためのエッチストッパー層と、ソース・ドレイン電極と、ゲート電極とチャネル層との間に配置されるゲート絶縁膜とを備えた薄膜トランジスタであって、酸化物半導体層を構成する金属元素は、In、Zn、およびSnで構成されると共に、前記酸化物半導体層と直接接触するゲート絶縁膜中の水素濃度は4原子%以下に制御されたものである。
【選択図】なし
Description
15≦[In]≦35、50≦[Zn]≦60、15≦[Sn]≦30
を満足するものである。
(ア)NBTSについて、ストレス印加試験前後のしきい値電圧(Vth)のシフト量ΔVth(絶対値)が5.0V未満
(イ)LNBTSについて、ストレス印加試験前後のしきい値電圧(Vth)のシフト量ΔVth(絶対値)が5.0V未満、SS値が0.55V/decade未満、且つストレス印加試験前後のオン電流(Ion)の変化量ΔIon(絶対値)が10%未満
例えば、SiO2に代表されるシリコン酸化膜(SiOx)は緻密で良好な絶縁特性を発現するものの、成膜速度が遅いという欠点がある。そこで、比較的成膜速度が速いSiNx膜とSiOx膜とを積層してゲート絶縁膜3を構成することにより、絶縁特性と生産性の両立を図ることが可能になる。この場合、絶縁特性を確保するためには、SiNx膜の厚みは、SiOx膜の厚みに対して50倍以下が好ましく、25倍以下がより好ましい。
酸化物半導体層4を構成する各金属原子の好ましいメタル比[酸素を除く全金属元素に対する各金属元素の好ましい含有量(原子%)]は、良好なTFT特性などが得られるように、適宜、適切に制御することが好ましい。
15≦[In]≦35(より好ましくは、15≦[In]≦25)
50≦[Zn]≦60
15≦[Sn]≦30
J.Parkら、Appl.Phys.Lett.,93,053505(2008)。
図1に示すTFTを以下のようにして作製し、ストレス耐性などを評価した。但し、本実施例では、図1の透明導電膜8は成膜していない。
ゲート電極2は純Moのスパッタリングターゲットを使用し、DCスパッタ法により形成した。スパッタリング条件は、成膜温度:室温、成膜パワー密度:3.8W/cm2、キャリアガス:Ar、成膜時のガス圧:2mTorr、Arガス流量:20sccmとした。
スパッタリング装置:株式会社アルパック製「CS−200」
基板温度:室温
ガス圧:1mTorr
酸素分圧:100×O2/(Ar+O2)=4体積%
成膜パワー密度:2.55W/cm2
X線源:Al Kα
X線出力:350W
光電子取り出し角:20°
成膜温度:230℃
ガス圧:133Pa
成膜パワー密度:1.1W/cm2
SiH4/N2Oの流量比(体積比):0.04
本実施例では、ゲート電極に負バイアスをかけるストレス印加試験を行った。ストレス印加条件は以下のとおりである。
・ソース電圧:0V
・ドレイン電圧:10V
・ゲート電圧:−20V
・基板温度:60℃
・ストレス印加時間:2時間
本実施例では、実際の液晶パネル駆動時の環境(ストレス)を模擬して、試料に光(白色光)を照射しながら、ゲート電極に負バイアスをかけ続けるストレス印加試験を行った。ストレス印加条件は以下のとおりである。光源は、液晶ディスプレイのバックライトを模擬して白色LEDを使用した。
・ソース電圧:0V
・ドレイン電圧:10V
・ゲート電圧:−20V
・基板温度:60℃
・ストレス印加時間:2時間
・光源:白色LED(PHILIPTS社製LED LXHL−PW01)
25000nit
SS値は、ドレイン電流を一桁増加させるのに必要なゲート電圧の最小値である。本実施例では、上記(2)のストレス試験(LNBTS)を行なったときのSS値を測定し、SS値<0.55V/decadeのものを合格とした。
オン電流(ΔIon)とは、ゲート電圧が30Vのドレイン電流で、トランジスタがオン状態のときの電流値である。本実施例では、上記(2)のストレス試験(LNBTS)前後のオン電流をそれぞれ測定し、ストレス試験前後で、その変化量ΔIon(絶対値)が10%未満のものを合格(A)、10%以上のものを不合格(B)とした。
図1に示すTFT(ゲート絶縁膜3は二層)を以下のようにして作製し、ストレス耐性などを評価した。但し、本実施例では、図1の透明導電膜8は成膜していない。
このゲート電極2の上に、まず下層のゲート電極側ゲート絶縁膜3としてSiN膜を成膜し、次いで、その上に上層の酸化物半導体層側ゲート絶縁膜3としてSiO2膜を成膜した。
下層および上層のゲート絶縁膜3はいずれも、プラズマCVD法を用い、CVD装置の電極として8インチの円形電極(面積314cm2)を用いて成膜した。詳しくは、下層のゲート絶縁膜3の形成においては、キャリアガス:SiH4とN2とNH3の混合ガスを用い、SiH4/N2ガス流量:304sccm、NH3ガス流量:100sccm、N2ガス流量:48sccmとし、成膜パワー密度:100W(0.32W/cm2)で成膜した。一方、上層のゲート絶縁膜3の形成においては、キャリアガス:SiH4とN2Oの混合ガスを用い、SiH4/N2ガス(SiH4ガスをN2ガスで10体積%に希釈したガス)流量:22sccm(SiH4ガスの流量は2sccm)、N2Oガス流量:100sccmとし、成膜パワー密度:300W(0.96W/cm2)で成膜した。下層および上層のいずれの成膜時にも、温度は320℃(一定)、ガス圧は200Pa(一定)とした。形成されたゲート絶縁膜中の水素量および膜厚は表2に示す。
スパッタリング装置:株式会社アルパック製「CS−200」
基板温度:室温
ガス圧:1mTorr
酸素分圧:100×O2/(Ar+O2)=4体積%
成膜パワー密度:2.55W/cm2
2 ゲート電極
3 ゲート絶縁膜
4 酸化物半導体層
5 ソース・ドレイン電極
6 保護膜(絶縁膜)
7 コンタクトホール
8 透明導電膜
9 エッチストッパー層
Claims (4)
- ゲート電極と、チャネル層に用いられる単層の酸化物半導体層と、酸化物半導体層の表面を保護するためのエッチストッパー層と、ソース・ドレイン電極と、ゲート電極とチャネル層との間に配置されるゲート絶縁膜とを備えた薄膜トランジスタであって、
前記酸化物半導体層を構成する金属元素は、In、Zn、およびSnで構成されると共に、
前記酸化物半導体層と直接接触する前記ゲート絶縁膜中の水素濃度は4原子%以下に制御されたものであることを特徴とする薄膜トランジスタ。 - 前記ゲート絶縁膜は、単層構造、または二層以上の積層構造を有し、
前記積層構造を有する場合は、前記酸化物半導体層と直接接触する層中の水素濃度が4原子%以下に制御されたものである請求項1に記載の薄膜トランジスタ。 - 前記酸化物半導体層は、酸素を除く全金属元素に対する各金属元素の含有量(原子%)をそれぞれ、[In]、[Zn]、および[Sn]としたとき、
15≦[In]≦35、50≦[Zn]≦60、15≦[Sn]≦30
の関係を満足するものである請求項1または2に記載の薄膜トランジスタ。 - 請求項1〜3のいずれかに記載の薄膜トランジスタを備えた表示装置。
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KR20150038352A (ko) | 2015-04-08 |
CN104584200B (zh) | 2017-10-13 |
TW201424007A (zh) | 2014-06-16 |
TW201427031A (zh) | 2014-07-01 |
US20150206978A1 (en) | 2015-07-23 |
JP2014225624A (ja) | 2014-12-04 |
US20150228674A1 (en) | 2015-08-13 |
US9318507B2 (en) | 2016-04-19 |
US9449990B2 (en) | 2016-09-20 |
CN104603919A (zh) | 2015-05-06 |
WO2014034874A1 (ja) | 2014-03-06 |
CN104603919B (zh) | 2017-10-13 |
WO2014034873A1 (ja) | 2014-03-06 |
KR101758538B1 (ko) | 2017-07-14 |
TWI536579B (zh) | 2016-06-01 |
TWI514589B (zh) | 2015-12-21 |
JP6134230B2 (ja) | 2017-05-24 |
JP6659205B2 (ja) | 2020-03-04 |
KR20150038351A (ko) | 2015-04-08 |
CN104584200A (zh) | 2015-04-29 |
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