JP6659205B2 - 薄膜トランジスタの製造方法および表示装置の製造方法 - Google Patents
薄膜トランジスタの製造方法および表示装置の製造方法 Download PDFInfo
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- JP6659205B2 JP6659205B2 JP2013168633A JP2013168633A JP6659205B2 JP 6659205 B2 JP6659205 B2 JP 6659205B2 JP 2013168633 A JP2013168633 A JP 2013168633A JP 2013168633 A JP2013168633 A JP 2013168633A JP 6659205 B2 JP6659205 B2 JP 6659205B2
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- 239000010409 thin film Substances 0.000 title claims description 41
- 238000000034 method Methods 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000010408 film Substances 0.000 claims description 148
- 239000010410 layer Substances 0.000 claims description 129
- 239000004065 semiconductor Substances 0.000 claims description 85
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 34
- 239000001257 hydrogen Substances 0.000 claims description 34
- 229910052739 hydrogen Inorganic materials 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 238000005477 sputtering target Methods 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 33
- 230000015572 biosynthetic process Effects 0.000 description 26
- 229910004298 SiO 2 Inorganic materials 0.000 description 17
- 239000000758 substrate Substances 0.000 description 14
- 239000011701 zinc Substances 0.000 description 14
- 238000012360 testing method Methods 0.000 description 12
- 230000001681 protective effect Effects 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 230000037230 mobility Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
15≦[In]≦35、50≦[Zn]≦60、15≦[Sn]≦30
を満足するスパッタリングターゲットを用いて形成する。
(ア)NBTSについて、ストレス印加試験前後のしきい値電圧(Vth)のシフト量ΔVth(絶対値)が5.0V未満
(イ)LNBTSについて、ストレス印加試験前後のしきい値電圧(Vth)のシフト量ΔVth(絶対値)が5.0V未満、SS値が0.55V/decade未満、且つストレス印加試験前後のオン電流(Ion)の変化量ΔIon(絶対値)が10%未満
例えば、SiO2に代表されるシリコン酸化膜(SiOx)は緻密で良好な絶縁特性を発現するものの、成膜速度が遅いという欠点がある。そこで、比較的成膜速度が速いSiNx膜とSiOx膜とを積層してゲート絶縁膜3を構成することにより、絶縁特性と生産性の両立を図ることが可能になる。この場合、絶縁特性を確保するためには、SiNx膜の厚みは、SiOx膜の厚みに対して50倍以下が好ましく、25倍以下がより好ましい。
酸化物半導体層4を構成する各金属原子の好ましいメタル比[酸素を除く全金属元素に対する各金属元素の好ましい含有量(原子%)]は、良好なTFT特性などが得られるように、適宜、適切に制御することが好ましい。
15≦[In]≦35(より好ましくは、15≦[In]≦25)
50≦[Zn]≦60
15≦[Sn]≦30
J.Parkら、Appl.Phys.Lett.,93,053505(2008)。
図1に示すTFTを以下のようにして作製し、ストレス耐性などを評価した。但し、本実施例では、図1の透明導電膜8は成膜していない。
ゲート電極2は純Moのスパッタリングターゲットを使用し、DCスパッタ法により形成した。スパッタリング条件は、成膜温度:室温、成膜パワー密度:3.8W/cm2、キャリアガス:Ar、成膜時のガス圧:2mTorr、Arガス流量:20sccmとした。
スパッタリング装置:株式会社アルパック製「CS−200」
基板温度:室温
ガス圧:1mTorr
酸素分圧:100×O2/(Ar+O2)=4体積%
成膜パワー密度:2.55W/cm2
X線源:Al Kα
X線出力:350W
光電子取り出し角:20°
成膜温度:230℃
ガス圧:133Pa
成膜パワー密度:1.1W/cm2
SiH4/N2Oの流量比(体積比):0.04
本実施例では、ゲート電極に負バイアスをかけるストレス印加試験を行った。ストレス印加条件は以下のとおりである。
・ソース電圧:0V
・ドレイン電圧:10V
・ゲート電圧:−20V
・基板温度:60℃
・ストレス印加時間:2時間
本実施例では、実際の液晶パネル駆動時の環境(ストレス)を模擬して、試料に光(白色光)を照射しながら、ゲート電極に負バイアスをかけ続けるストレス印加試験を行った。ストレス印加条件は以下のとおりである。光源は、液晶ディスプレイのバックライトを模擬して白色LEDを使用した。
・ソース電圧:0V
・ドレイン電圧:10V
・ゲート電圧:−20V
・基板温度:60℃
・ストレス印加時間:2時間
・光源:白色LED(PHILIPTS社製LED LXHL−PW01)
25000nit
SS値は、ドレイン電流を一桁増加させるのに必要なゲート電圧の最小値である。本実施例では、上記(2)のストレス試験(LNBTS)を行なったときのSS値を測定し、SS値<0.55V/decadeのものを合格とした。
オン電流(ΔIon)とは、ゲート電圧が30Vのドレイン電流で、トランジスタがオン状態のときの電流値である。本実施例では、上記(2)のストレス試験(LNBTS)前後のオン電流をそれぞれ測定し、ストレス試験前後で、その変化量ΔIon(絶対値)が10%未満のものを合格(A)、10%以上のものを不合格(B)とした。
図1に示すTFT(ゲート絶縁膜3は二層)を以下のようにして作製し、ストレス耐性などを評価した。但し、本実施例では、図1の透明導電膜8は成膜していない。
このゲート電極2の上に、まず下層のゲート電極側ゲート絶縁膜3としてSiN膜を成膜し、次いで、その上に上層の酸化物半導体層側ゲート絶縁膜3としてSiO2膜を成膜した。
下層および上層のゲート絶縁膜3はいずれも、プラズマCVD法を用い、CVD装置の電極として8インチの円形電極(面積314cm2)を用いて成膜した。詳しくは、下層のゲート絶縁膜3の形成においては、キャリアガス:SiH4とN2とNH3の混合ガスを用い、SiH4/N2ガス流量:304sccm、NH3ガス流量:100sccm、N2ガス流量:48sccmとし、成膜パワー密度:100W(0.32W/cm2)で成膜した。一方、上層のゲート絶縁膜3の形成においては、キャリアガス:SiH4とN2Oの混合ガスを用い、SiH4/N2ガス(SiH4ガスをN2ガスで10体積%に希釈したガス)流量:22sccm(SiH4ガスの流量は2sccm)、N2Oガス流量:100sccmとし、成膜パワー密度:300W(0.96W/cm2)で成膜した。下層および上層のいずれの成膜時にも、温度は320℃(一定)、ガス圧は200Pa(一定)とした。形成されたゲート絶縁膜中の水素量および膜厚は表2に示す。
スパッタリング装置:株式会社アルパック製「CS−200」
基板温度:室温
ガス圧:1mTorr
酸素分圧:100×O2/(Ar+O2)=4体積%
成膜パワー密度:2.55W/cm2
2 ゲート電極
3 ゲート絶縁膜
4 酸化物半導体層
5 ソース・ドレイン電極
6 保護膜(絶縁膜)
7 コンタクトホール
8 透明導電膜
9 エッチストッパー層
Claims (4)
- ゲート電極と、チャネル層に用いられる単層の酸化物半導体層と、酸化物半導体層の表面を保護するためのエッチストッパー層と、ソース・ドレイン電極と、ゲート電極とチャネル層との間に配置されるゲート絶縁膜とを備えた薄膜トランジスタの製造方法であって、
前記ゲート絶縁膜としてシリコン酸化膜を形成する工程と、
金属元素としてIn、Zn、およびSnで構成される酸化物からなるスパッタリングターゲットを用いて前記酸化物半導体層を形成する工程と、
を有するとともに、
前記酸化物半導体層と直接接触する前記ゲート絶縁膜を成膜する際に、該ゲート絶縁膜中の水素濃度を1.2原子%以上、4原子%以下に制御することを特徴とする薄膜トランジスタの製造方法。 - 前記ゲート絶縁膜は、単層構造、または二層以上の積層構造を有し、
前記積層構造を有する場合に、前記酸化物半導体層と直接接触する層中の水素濃度を1.2原子%以上、4原子%以下に制御する請求項1に記載の薄膜トランジスタの製造方法。 - 前記酸化物半導体層を、
酸素を除く全金属元素に対する各金属元素の含有量(原子%)をそれぞれ、[In]、[Zn]、および[Sn]としたとき、
15≦[In]≦35、50≦[Zn]≦60、15≦[Sn]≦30
の関係を満足するスパッタリングターゲットを用いて形成する請求項1または2に記載の薄膜トランジスタの製造方法。 - 請求項1〜3のいずれかに記載の薄膜トランジスタの製造方法により薄膜トランジスタを製造する工程と、
前記薄膜トランジスタを用いて表示装置を組み立てる工程と、
を有する表示装置の製造方法。
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US20150206978A1 (en) | 2015-07-23 |
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US9318507B2 (en) | 2016-04-19 |
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WO2014034873A1 (ja) | 2014-03-06 |
KR101758538B1 (ko) | 2017-07-14 |
TWI536579B (zh) | 2016-06-01 |
TWI514589B (zh) | 2015-12-21 |
JP6134230B2 (ja) | 2017-05-24 |
KR20150038351A (ko) | 2015-04-08 |
CN104584200A (zh) | 2015-04-29 |
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