JP5992675B2 - 薄膜トランジスター表示板およびその製造方法 - Google Patents
薄膜トランジスター表示板およびその製造方法 Download PDFInfo
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- JP5992675B2 JP5992675B2 JP2011252622A JP2011252622A JP5992675B2 JP 5992675 B2 JP5992675 B2 JP 5992675B2 JP 2011252622 A JP2011252622 A JP 2011252622A JP 2011252622 A JP2011252622 A JP 2011252622A JP 5992675 B2 JP5992675 B2 JP 5992675B2
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- 239000010409 thin film Substances 0.000 title claims description 75
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000010408 film Substances 0.000 claims description 188
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 80
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 80
- 239000004065 semiconductor Substances 0.000 claims description 52
- 230000001681 protective effect Effects 0.000 claims description 37
- 239000001257 hydrogen Substances 0.000 claims description 32
- 229910052739 hydrogen Inorganic materials 0.000 claims description 32
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910007604 Zn—Sn—O Inorganic materials 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical group [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- 229910007611 Zn—In—O Inorganic materials 0.000 claims description 5
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 description 11
- 239000010410 layer Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
Description
124:ゲート電極
140:ゲート絶縁膜
154:酸化物半導体
173:ソース電極
175:ドレイン電極
191:画素電極
Claims (13)
- 絶縁基板と、
前記絶縁基板の上に位置するゲート線と、
前記ゲート線と交差するデータ線と、
半導体を含み、前記ゲート線およびデータ線と連結されている薄膜トランジスターと、
前記薄膜トランジスターのゲート電極と前記薄膜トランジスターの半導体との間に位置するゲート絶縁膜と、
前記薄膜トランジスターと連結されている画素電極と、
前記画素電極と前記薄膜トランジスターとの間に位置する保護膜と、
を備え、
前記ゲート絶縁膜および前記保護膜のうちの少なくとも一方は、前記半導体に接触する第1窒化シリコン膜及び前記第1窒化シリコン膜よりも前記半導体から離れている第2窒
化シリコン膜を有する窒化シリコン膜を含み、
前記第1窒化シリコン膜は、2×1022atom numbers/cm3以下または4atomic%以下にて水素を含み、
前記第2窒化シリコン膜の水素濃度は、前記第1窒化シリコン膜の水素濃度よりも高く、
前記第1窒化シリコン膜の密度は前記第2窒化シリコン膜の密度よりも高い、薄膜トランジスター表示板。 - 前記窒化シリコン膜の屈折率は、1.86〜2.0である、請求項1に記載の薄膜トランジスター表示板。
- 前記半導体は、酸化物半導体から形成され、
前記酸化物半導体は、亜鉛(Zn)、ガリウム(Ga)、錫(Sn)またはインジウム(In)を基本とする酸化物、これらの複合酸化物のうち、少なくとも1つを含む、請求項1又は2に記載の薄膜トランジスター表示板。 - 前記半導体は、酸化物半導体から形成され、
前記酸化物半導体は、酸化亜鉛(ZnO)、インジウム−ガリウム−亜鉛酸化物(InGaZnO4)、インジウム−亜鉛酸化物(Zn−In−O)、または亜鉛−錫酸化物(Zn−Sn−O)のうち、少なくとも1つを含む、請求項1〜3のいずれかに記載の薄膜トランジスター表示板。 - 絶縁基板の上にゲート線を形成するステップと、
前記ゲート線と交差するデータ線を形成するステップと、
前記ゲート線およびデータ線と連結される薄膜トランジスターを形成するステップと、
前記薄膜トランジスターの上に保護膜を形成するステップと、
前記保護膜の上に位置し、且つ、前記薄膜トランジスターと連結される画素電極を形成するステップと、
を含み、
前記保護膜および前記薄膜トランジスターのゲート電極と半導体の間に位置するゲート絶縁膜のうちの少なくとも一つは、窒化シリコン膜を含み、
前記ゲート絶縁膜は、前記半導体に接する第1ゲート絶縁膜と、前記第1ゲート絶縁膜よりも前記半導体から離れている第2ゲート絶縁膜とを有し、
前記ゲート絶縁膜は、2×10 22 atom numbers/cm 3 以下または4atomic%以下にて水素を含む窒化シリコン膜を含み、
前記第2ゲート絶縁膜の水素濃度は、前記第1ゲート絶縁膜の水素濃度よりも高く、
前記第1ゲート絶縁膜の密度は前記第2ゲート絶縁膜の密度よりも高く、
前記ゲート絶縁膜は、蒸着チャンバーの圧力を1、500mTorr以下に維持し、且つ、N2/SiH4の流量比を80以上に維持して形成する、薄膜トランジスター表示板の製造方法。 - 前記窒化シリコン膜の屈折率は1.86〜2.0になるように形成する、請求項5に記載の薄膜トランジスター表示板の製造方法。
- 前記半導体は、酸化物半導体から形成する、請求項5又は6に記載の薄膜トランジスター表示板の製造方法。
- 前記酸化物半導体は、亜鉛(Zn)、ガリウム(Ga)、錫(Sn)またはインジウム(In)を基本とする酸化物、これらの複合酸化物のうち、少なくとも1つを含む、請求項7に記載の薄膜トランジスター表示板の製造方法。
- 前記酸化物半導体は、酸化亜鉛(ZnO)、インジウム−ガリウム−亜鉛酸化物(InGaZnO4)、インジウム−亜鉛酸化物(Zn−In−O)、または亜鉛−錫酸化物(Zn−Sn−O)のうち、少なくとも1つを含む、請求項7又は8に記載の薄膜トランジスター表示板の製造方法。
- 前記第1窒化シリコン膜は、1.5×1022atom numbers/cm3の水素を含む、請求項1〜4のいずれかに記載の薄膜トランジスター表示板。
- 前記第1窒化シリコン膜は、1.4×1022atom numbers/cm3の水素を含む、請求項1〜4のいずれかに記載の薄膜トランジスター表示板。
- 前記ゲート絶縁膜は、1.5×1022atom numbers/cm3の水素を含む、請求項5〜9のいずれかに記載の薄膜トランジスター表示板の製造方法。
- 前記ゲート絶縁膜は、1.4×1022atom numbers/cm3の水素を含む、請求項5〜9のいずれかに記載の薄膜トランジスター表示板の製造方法。
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KR20210109658A (ko) * | 2012-05-10 | 2021-09-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 |
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JP6134230B2 (ja) * | 2012-08-31 | 2017-05-24 | 株式会社神戸製鋼所 | 薄膜トランジスタおよび表示装置 |
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CN117157768A (zh) * | 2022-03-30 | 2023-12-01 | 京东方科技集团股份有限公司 | 金属氧化物薄膜晶体管、阵列基板及显示装置 |
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JP2000100811A (ja) * | 1998-09-18 | 2000-04-07 | Rohm Co Ltd | 半導体装置の製造方法 |
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JP4170120B2 (ja) * | 2003-03-19 | 2008-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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CN100446274C (zh) * | 2005-07-07 | 2008-12-24 | 友达光电股份有限公司 | 像素电极的开关元件及其制造方法 |
JP2007048571A (ja) * | 2005-08-09 | 2007-02-22 | Seiko Epson Corp | 有機el装置の製造方法、電子機器 |
JP4873528B2 (ja) * | 2005-09-02 | 2012-02-08 | 財団法人高知県産業振興センター | 薄膜トランジスタの製造方法 |
KR20080008562A (ko) * | 2006-07-20 | 2008-01-24 | 삼성전자주식회사 | 어레이 기판의 제조방법, 어레이 기판 및 이를 갖는표시장치 |
JP5105842B2 (ja) * | 2006-12-05 | 2012-12-26 | キヤノン株式会社 | 酸化物半導体を用いた表示装置及びその製造方法 |
KR101363555B1 (ko) * | 2006-12-14 | 2014-02-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
WO2008123264A1 (en) * | 2007-03-23 | 2008-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2008282903A (ja) * | 2007-05-09 | 2008-11-20 | Nec Electronics Corp | 半導体装置およびその製造方法 |
TWI345836B (en) * | 2007-06-12 | 2011-07-21 | Au Optronics Corp | Dielectric layer and thin film transistor,display planel,and electro-optical apparatus |
CN101104925A (zh) * | 2007-08-21 | 2008-01-16 | 西安电子科技大学 | 电子回旋共振等离子体化学汽相淀积氮化硅薄膜的方法 |
KR101474774B1 (ko) * | 2008-07-07 | 2014-12-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이의 제조 방법 |
JP5515281B2 (ja) * | 2008-12-03 | 2014-06-11 | ソニー株式会社 | 薄膜トランジスタ、表示装置、電子機器および薄膜トランジスタの製造方法 |
KR101906751B1 (ko) * | 2009-03-12 | 2018-10-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
WO2010150446A1 (ja) * | 2009-06-24 | 2010-12-29 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法、アクティブマトリクス基板、表示パネル、ならびに表示装置 |
WO2011001704A1 (ja) * | 2009-07-03 | 2011-01-06 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法 |
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JP2012151443A (ja) | 2012-08-09 |
US20120181533A1 (en) | 2012-07-19 |
KR101832361B1 (ko) | 2018-04-16 |
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