JP2010183109A5 - - Google Patents

Download PDF

Info

Publication number
JP2010183109A5
JP2010183109A5 JP2010108612A JP2010108612A JP2010183109A5 JP 2010183109 A5 JP2010183109 A5 JP 2010183109A5 JP 2010108612 A JP2010108612 A JP 2010108612A JP 2010108612 A JP2010108612 A JP 2010108612A JP 2010183109 A5 JP2010183109 A5 JP 2010183109A5
Authority
JP
Japan
Prior art keywords
liquid
optical element
substrate
exposure apparatus
forming member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010108612A
Other languages
English (en)
Japanese (ja)
Other versions
JP5287791B2 (ja
JP2010183109A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010108612A priority Critical patent/JP5287791B2/ja
Priority claimed from JP2010108612A external-priority patent/JP5287791B2/ja
Publication of JP2010183109A publication Critical patent/JP2010183109A/ja
Publication of JP2010183109A5 publication Critical patent/JP2010183109A5/ja
Application granted granted Critical
Publication of JP5287791B2 publication Critical patent/JP5287791B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2010108612A 2003-04-07 2010-05-10 露光装置、露光方法及びデバイス製造方法 Expired - Fee Related JP5287791B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010108612A JP5287791B2 (ja) 2003-04-07 2010-05-10 露光装置、露光方法及びデバイス製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003103145 2003-04-07
JP2003103145 2003-04-07
JP2010108612A JP5287791B2 (ja) 2003-04-07 2010-05-10 露光装置、露光方法及びデバイス製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2005505289A Division JP4902201B2 (ja) 2003-04-07 2004-04-06 露光装置、露光方法及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2010183109A JP2010183109A (ja) 2010-08-19
JP2010183109A5 true JP2010183109A5 (enExample) 2011-11-10
JP5287791B2 JP5287791B2 (ja) 2013-09-11

Family

ID=33156817

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2005505289A Expired - Fee Related JP4902201B2 (ja) 2003-04-07 2004-04-06 露光装置、露光方法及びデバイス製造方法
JP2010108612A Expired - Fee Related JP5287791B2 (ja) 2003-04-07 2010-05-10 露光装置、露光方法及びデバイス製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2005505289A Expired - Fee Related JP4902201B2 (ja) 2003-04-07 2004-04-06 露光装置、露光方法及びデバイス製造方法

Country Status (8)

Country Link
US (4) US7480029B2 (enExample)
EP (1) EP1612850B1 (enExample)
JP (2) JP4902201B2 (enExample)
KR (1) KR101176817B1 (enExample)
AT (1) ATE426914T1 (enExample)
DE (1) DE602004020200D1 (enExample)
TW (1) TWI385706B (enExample)
WO (1) WO2004090956A1 (enExample)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1612850B1 (en) * 2003-04-07 2009-03-25 Nikon Corporation Exposure apparatus and method for manufacturing a device
KR101484435B1 (ko) 2003-04-09 2015-01-19 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
WO2004092833A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
CN103383527B (zh) 2003-04-10 2015-10-28 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
EP2613195B1 (en) 2003-04-11 2015-12-16 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
EP2261742A3 (en) 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
CN101436003B (zh) 2003-06-19 2011-08-17 株式会社尼康 曝光装置及器件制造方法
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1491956B1 (en) * 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
ATE513309T1 (de) 2003-07-09 2011-07-15 Nikon Corp Belichtungsvorrichtung und verfahren zur bauelementeherstellung
US7370659B2 (en) 2003-08-06 2008-05-13 Micron Technology, Inc. Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101748923B1 (ko) * 2003-09-03 2017-06-19 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
TWI628698B (zh) 2003-10-28 2018-07-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI612338B (zh) 2003-11-20 2018-01-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法
JP4323946B2 (ja) * 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
TWI614795B (zh) 2004-02-06 2018-02-11 Nikon Corporation 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
CN100592210C (zh) * 2004-02-13 2010-02-24 卡尔蔡司Smt股份公司 微平版印刷投影曝光装置的投影物镜
US8111373B2 (en) 2004-03-25 2012-02-07 Nikon Corporation Exposure apparatus and device fabrication method
KR101162938B1 (ko) 2004-04-19 2012-07-05 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161654B2 (en) * 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4784513B2 (ja) * 2004-12-06 2011-10-05 株式会社ニコン メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
US7180571B2 (en) * 2004-12-08 2007-02-20 Asml Netherlands B.V. Lithographic projection apparatus and actuator
SG124351A1 (en) * 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
KR101427056B1 (ko) 2005-01-31 2014-08-05 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
CN102385260B (zh) 2005-02-10 2014-11-05 Asml荷兰有限公司 浸没液体、曝光装置及曝光方法
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2660853B1 (en) 2005-05-12 2017-07-05 Nikon Corporation Projection optical system, exposure apparatus and exposure method
DE102005024163A1 (de) 2005-05-23 2006-11-30 Carl Zeiss Smt Ag Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
US7583358B2 (en) 2005-07-25 2009-09-01 Micron Technology, Inc. Systems and methods for retrieving residual liquid during immersion lens photolithography
US7456928B2 (en) 2005-08-29 2008-11-25 Micron Technology, Inc. Systems and methods for controlling ambient pressure during processing of microfeature workpieces, including during immersion lithography
JP2007088339A (ja) * 2005-09-26 2007-04-05 Nikon Corp 露光装置、及びデバイス製造方法
JPWO2007055199A1 (ja) 2005-11-09 2009-04-30 株式会社ニコン 露光装置及び方法、並びにデバイス製造方法
US20070127002A1 (en) * 2005-11-09 2007-06-07 Nikon Corporation Exposure apparatus and method, and device manufacturing method
JPWO2007055237A1 (ja) * 2005-11-09 2009-04-30 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
WO2007055373A1 (ja) 2005-11-14 2007-05-18 Nikon Corporation 液体回収部材、露光装置、露光方法、及びデバイス製造方法
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
WO2007066692A1 (ja) 2005-12-06 2007-06-14 Nikon Corporation 露光方法、露光装置、及びデバイス製造方法
US8472004B2 (en) 2006-01-18 2013-06-25 Micron Technology, Inc. Immersion photolithography scanner
JP4889331B2 (ja) * 2006-03-22 2012-03-07 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US9477158B2 (en) * 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
EP2179329A1 (en) 2007-10-16 2010-04-28 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
KR101562073B1 (ko) 2007-10-16 2015-10-21 가부시키가이샤 니콘 조명 광학 시스템, 노광 장치 및 디바이스 제조 방법
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
KR101695034B1 (ko) 2008-05-28 2017-01-10 가부시키가이샤 니콘 공간 광 변조기의 검사 장치, 조명 광학계, 노광 장치, 검사 방법, 조명 광학계의 조정 방법, 조명 방법, 노광 방법, 및 디바이스 제조 방법
DE102008050868A1 (de) * 2008-09-30 2010-04-08 M+W Zander Products Gmbh Einrichtung zur Temperaturstabilisierung von Flüssigkeiten, vorzugsweise von ultrareinem Wasser, bei der Herstellung von Chips sowie Verfahren zur Temperaturstabilisierung von Flüssigkeiten zur Anwendung bei der Herstellung von Chips
US20110153387A1 (en) * 2009-12-17 2011-06-23 Google Inc. Customizing surveys
JP6132072B2 (ja) * 2014-06-12 2017-05-24 富士電機株式会社 不純物添加装置、不純物添加方法及び半導体素子の製造方法

Family Cites Families (155)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE416412A (enExample) * 1935-07-08
US2552414A (en) * 1948-06-08 1951-05-08 Hazeltine Research Inc Electrical connector for solid dielectric type coaxial lines
US3243321A (en) * 1962-11-02 1966-03-29 Atlas Copco Ab Method of teflon coating of metals
US3398391A (en) * 1967-08-10 1968-08-20 Alexander R. Brishka Hermetically sealed connectors
GB1242527A (en) * 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3678447A (en) * 1970-06-17 1972-07-18 Amp Inc Coaxial cable connector sub-assembly
US3633051A (en) * 1971-02-16 1972-01-04 Gte Sylvania Inc Transistorized load control circuit
US4372112A (en) * 1980-07-01 1983-02-08 Ford Motor Company Thin-walled exhaust gas manifold casting
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
US5059287A (en) * 1989-06-16 1991-10-22 Charles W. Harkey, Sr. Portable water distiller
JPH03209479A (ja) 1989-09-06 1991-09-12 Sanee Giken Kk 露光方法
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JP3203698B2 (ja) * 1991-09-02 2001-08-27 株式会社ニコン 顕微鏡の液浸対物レンズ及び防水キャップ
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JPH06208058A (ja) * 1993-01-13 1994-07-26 Olympus Optical Co Ltd 顕微鏡対物レンズ
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US6083040A (en) * 1997-07-25 2000-07-04 Itt Manufacturing Enterprises, Inc. Connector with releasable mounting flange
US6058666A (en) * 1997-08-31 2000-05-09 Lin; Wei-Hwang Twin-axis prestressed single-tee beam with lower flange and process of construction
JP4026943B2 (ja) * 1997-09-04 2007-12-26 キヤノン株式会社 露光装置およびデバイス製造方法
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000012453A (ja) 1998-06-18 2000-01-14 Nikon Corp 露光装置及びその使用方法、露光方法、並びにマスクの製造方法
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
JP2002083766A (ja) * 2000-06-19 2002-03-22 Nikon Corp 投影光学系、該光学系の製造方法、及び前記光学系を備えた投影露光装置
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002305138A (ja) * 2001-04-05 2002-10-18 Nikon Corp 露光装置および露光方法
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
DE10123027B4 (de) * 2001-05-11 2005-07-21 Evotec Oai Ag Vorrichtung zur Untersuchung chemischer und/oder biologischer Proben
US6666732B1 (en) * 2001-05-21 2003-12-23 John E. Endacott Terminal connector
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
US6581579B1 (en) * 2002-06-19 2003-06-24 Walbro Engine Management, L.L.C. Vapor separator for a fuel pump assembly
JP2005536775A (ja) 2002-08-23 2005-12-02 株式会社ニコン 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101382738B (zh) 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
CN101713932B (zh) 2002-11-12 2012-09-26 Asml荷兰有限公司 光刻装置和器件制造方法
TWI232357B (en) 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
US6679726B1 (en) * 2002-11-26 2004-01-20 Molex Incorporated Panel mounted electrical connector
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
US6992750B2 (en) 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
WO2004055803A1 (en) 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
US7010958B2 (en) 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
DE60314668T2 (de) 2002-12-19 2008-03-06 Koninklijke Philips Electronics N.V. Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
ES2268450T3 (es) 2002-12-19 2007-03-16 Koninklijke Philips Electronics N.V. Metodo y dispositivo para irradiar puntos en una capa.
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
JP4449310B2 (ja) * 2003-02-27 2010-04-14 株式会社寺岡精工 計量印字装置
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
EP1612850B1 (en) * 2003-04-07 2009-03-25 Nikon Corporation Exposure apparatus and method for manufacturing a device
WO2004093159A2 (en) 2003-04-09 2004-10-28 Nikon Corporation Immersion lithography fluid control system
WO2004090633A2 (en) 2003-04-10 2004-10-21 Nikon Corporation An electro-osmotic element for an immersion lithography apparatus
EP1611482B1 (en) 2003-04-10 2015-06-03 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
CN103383527B (zh) 2003-04-10 2015-10-28 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
WO2004092833A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
KR20190007532A (ko) 2003-04-11 2019-01-22 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
EP2613195B1 (en) 2003-04-11 2015-12-16 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
JP2006523958A (ja) 2003-04-17 2006-10-19 株式会社ニコン 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
SG110100A1 (en) 2003-06-27 2005-04-28 Asml Holding Nv Immersion photolithography system and method using inverted wafer-projection optics interface
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1491956B1 (en) 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005006026A2 (en) 2003-07-01 2005-01-20 Nikon Corporation Using isotopically specified fluids as optical elements
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US20050045554A1 (en) * 2003-08-28 2005-03-03 Gambro Lundia Ab Membrane unit element, semipermeable membrane, filtration device, and processes for manufacturing the same
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR101748923B1 (ko) 2003-09-03 2017-06-19 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
EP1685446A2 (en) 2003-11-05 2006-08-02 DSM IP Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4747263B2 (ja) 2003-11-24 2011-08-17 カール・ツァイス・エスエムティー・ゲーエムベーハー オブジェクティブにおける光学素子のための保持装置
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
US7106415B2 (en) * 2003-12-09 2006-09-12 Anvik Corporation Illumination compensator for curved surface lithography
KR101200654B1 (ko) 2003-12-15 2012-11-12 칼 짜이스 에스엠티 게엠베하 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
US7385764B2 (en) 2003-12-15 2008-06-10 Carl Zeiss Smt Ag Objectives as a microlithography projection objective with at least one liquid lens
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4253592B2 (ja) * 2004-01-06 2009-04-15 オリンパス株式会社 液浸対物レンズ、蛍光分析装置および倒立型顕微鏡。
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
KR101179350B1 (ko) 2004-01-14 2012-09-11 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
CN1910522B (zh) 2004-01-16 2010-05-26 卡尔蔡司Smt股份公司 偏振调制光学元件
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
JP4843503B2 (ja) 2004-01-20 2011-12-21 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置および投影レンズのための測定装置
US7026259B2 (en) 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
KR20070039869A (ko) 2004-02-03 2007-04-13 브루스 더블유. 스미스 용액을 사용한 포토리소그래피 방법 및 관련 시스템
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005076084A1 (en) 2004-02-09 2005-08-18 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
EP1714192A1 (en) 2004-02-13 2006-10-25 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
CN100592210C (zh) * 2004-02-13 2010-02-24 卡尔蔡司Smt股份公司 微平版印刷投影曝光装置的投影物镜
WO2005081030A1 (en) 2004-02-18 2005-09-01 Corning Incorporated Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Similar Documents

Publication Publication Date Title
JP2010183109A5 (enExample)
JP2012134552A5 (ja) ノズル部材、露光装置、デバイス製造方法、及び露光方法。
JP2010109391A5 (enExample)
JP2010283405A5 (ja) ノズル部材、露光装置、露光方法、及びデバイス製造方法
JP2011258965A5 (ja) 露光装置
JP2012164992A5 (enExample)
JP2014078748A5 (enExample)
JP2012506641A5 (enExample)
JP2012156539A5 (ja) 露光装置、デバイス製造方法、及びクリーニング方法
JP2012164995A5 (ja) 露光装置、露光方法、デバイス製造方法
JP2012129556A5 (ja) 露光装置、デバイス製造方法、及び露光方法。
JP2011049607A5 (enExample)
JP2012044223A5 (ja) ノズル部材、露光装置、露光方法、及びデバイス製造方法
JP2010093302A5 (enExample)
JP2012164996A5 (ja) 露光装置、デバイス製造方法、及びクリーニング方法
JP2015528132A5 (enExample)
JP2012134512A5 (ja) 露光装置、露光装置のメンテナンス方法、露光方法、及びデバイス製造方法
JP2012169641A5 (ja) 液浸露光装置、液浸露光方法、及びデバイス製造方法
JP2011160001A5 (ja) 露光装置、及び液体検出方法
JP2014017499A5 (enExample)
JP2012248902A5 (ja) 洗浄方法、液浸露光装置、及びデバイス製造方法
TWI628507B (zh) 用於沈積之遮罩總成
JP2011171757A5 (ja) 露光装置、及び液体除去方法
US10067417B2 (en) Mask plate, mask exposure device and mask exposure method
JP2010521814A5 (enExample)