|
GB1242527A
(en)
|
1967-10-20 |
1971-08-11 |
Kodak Ltd |
Optical instruments
|
|
US3573975A
(en)
|
1968-07-10 |
1971-04-06 |
Ibm |
Photochemical fabrication process
|
|
ATE1462T1
(de)
|
1979-07-27 |
1982-08-15 |
Werner W. Dr. Tabarelli |
Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe.
|
|
FR2474708B1
(fr)
|
1980-01-24 |
1987-02-20 |
Dme |
Procede de microphotolithographie a haute resolution de traits
|
|
JPS5754317A
(en)
|
1980-09-19 |
1982-03-31 |
Hitachi Ltd |
Method and device for forming pattern
|
|
US4509852A
(en)
|
1980-10-06 |
1985-04-09 |
Werner Tabarelli |
Apparatus for the photolithographic manufacture of integrated circuit elements
|
|
US4346164A
(en)
|
1980-10-06 |
1982-08-24 |
Werner Tabarelli |
Photolithographic method for the manufacture of integrated circuits
|
|
US4390273A
(en)
|
1981-02-17 |
1983-06-28 |
Censor Patent-Und Versuchsanstalt |
Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
|
|
JPS57153433A
(en)
|
1981-03-18 |
1982-09-22 |
Hitachi Ltd |
Manufacturing device for semiconductor
|
|
DD221563A1
(de)
|
1983-09-14 |
1985-04-24 |
Mikroelektronik Zt Forsch Tech |
Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
|
|
DD224448A1
(de)
|
1984-03-01 |
1985-07-03 |
Zeiss Jena Veb Carl |
Einrichtung zur fotolithografischen strukturuebertragung
|
|
JPS6194342U
(enExample)
*
|
1984-11-27 |
1986-06-18 |
|
|
|
US5040020A
(en)
|
1988-03-31 |
1991-08-13 |
Cornell Research Foundation, Inc. |
Self-aligned, high resolution resonant dielectric lithography
|
|
JPH069195B2
(ja)
|
1989-05-06 |
1994-02-02 |
大日本スクリーン製造株式会社 |
基板の表面処理方法
|
|
JPH03209479A
(ja)
|
1989-09-06 |
1991-09-12 |
Sanee Giken Kk |
露光方法
|
|
US5121256A
(en)
|
1991-03-14 |
1992-06-09 |
The Board Of Trustees Of The Leland Stanford Junior University |
Lithography system employing a solid immersion lens
|
|
JPH06124873A
(ja)
*
|
1992-10-09 |
1994-05-06 |
Canon Inc |
液浸式投影露光装置
|
|
JP2753930B2
(ja)
|
1992-11-27 |
1998-05-20 |
キヤノン株式会社 |
液浸式投影露光装置
|
|
US5874820A
(en)
|
1995-04-04 |
1999-02-23 |
Nikon Corporation |
Window frame-guided stage mechanism
|
|
US6989647B1
(en)
|
1994-04-01 |
2006-01-24 |
Nikon Corporation |
Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
|
|
US5528118A
(en)
|
1994-04-01 |
1996-06-18 |
Nikon Precision, Inc. |
Guideless stage with isolated reaction stage
|
|
US7365513B1
(en)
|
1994-04-01 |
2008-04-29 |
Nikon Corporation |
Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
|
|
US5623853A
(en)
|
1994-10-19 |
1997-04-29 |
Nikon Precision Inc. |
Precision motion stage with single guide beam and follower stage
|
|
US6008500A
(en)
|
1995-04-04 |
1999-12-28 |
Nikon Corporation |
Exposure apparatus having dynamically isolated reaction frame
|
|
JPH08316124A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
|
US5661092A
(en)
|
1995-09-01 |
1997-08-26 |
The University Of Connecticut |
Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof
|
|
WO1998009278A1
(en)
|
1996-08-26 |
1998-03-05 |
Digital Papyrus Technologies |
Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
|
|
US5825043A
(en)
|
1996-10-07 |
1998-10-20 |
Nikon Precision Inc. |
Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
|
|
KR20030096435A
(ko)
|
1996-11-28 |
2003-12-31 |
가부시키가이샤 니콘 |
노광장치 및 노광방법
|
|
JP3728613B2
(ja)
|
1996-12-06 |
2005-12-21 |
株式会社ニコン |
走査型露光装置の調整方法及び該方法を使用する走査型露光装置
|
|
US5815246A
(en)
|
1996-12-24 |
1998-09-29 |
U.S. Philips Corporation |
Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device
|
|
DE69717975T2
(de)
|
1996-12-24 |
2003-05-28 |
Asml Netherlands B.V., Veldhoven |
In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
|
|
EP0900412B1
(en)
|
1997-03-10 |
2005-04-06 |
ASML Netherlands B.V. |
Lithographic apparatus comprising a positioning device having two object holders
|
|
US5900354A
(en)
|
1997-07-03 |
1999-05-04 |
Batchelder; John Samuel |
Method for optical inspection and lithography
|
|
AU1505699A
(en)
|
1997-12-12 |
1999-07-05 |
Nikon Corporation |
Projection exposure method and projection aligner
|
|
US6208407B1
(en)
|
1997-12-22 |
2001-03-27 |
Asm Lithography B.V. |
Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
|
|
AU2747999A
(en)
*
|
1998-03-26 |
1999-10-18 |
Nikon Corporation |
Projection exposure method and system
|
|
JP2000173884A
(ja)
|
1998-12-02 |
2000-06-23 |
Canon Inc |
デバイス製造装置および方法ならびにデバイス製造装置の配線・配管実装方法
|
|
KR20010112265A
(ko)
|
1999-02-12 |
2001-12-20 |
시마무라 테루오 |
노광방법 및 장치
|
|
TWI242111B
(en)
|
1999-04-19 |
2005-10-21 |
Asml Netherlands Bv |
Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
|
|
JP2001021875A
(ja)
|
1999-07-12 |
2001-01-26 |
Seiko Epson Corp |
液晶装置及びこれを用いた投写型表示装置
|
|
WO2001027978A1
(en)
|
1999-10-07 |
2001-04-19 |
Nikon Corporation |
Substrate, stage device, method of driving stage, exposure system and exposure method
|
|
JP3679668B2
(ja)
|
1999-12-20 |
2005-08-03 |
キヤノン株式会社 |
インクジェット記録ヘッドの製造方法
|
|
US6995930B2
(en)
|
1999-12-29 |
2006-02-07 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
|
US7187503B2
(en)
|
1999-12-29 |
2007-03-06 |
Carl Zeiss Smt Ag |
Refractive projection objective for immersion lithography
|
|
JP2001272604A
(ja)
|
2000-03-27 |
2001-10-05 |
Olympus Optical Co Ltd |
液浸対物レンズおよびそれを用いた光学装置
|
|
US20020014403A1
(en)
|
2000-04-07 |
2002-02-07 |
Eiichi Hoshino |
Method of fabricating reflective mask, and methods and apparatus of detecting wet etching end point and inspecting side etching amount
|
|
US20020041377A1
(en)
|
2000-04-25 |
2002-04-11 |
Nikon Corporation |
Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
|
|
US6559922B2
(en)
|
2000-05-03 |
2003-05-06 |
Eric C. Hansell |
Method and apparatus for a non-contact scavenging seal
|
|
US6488040B1
(en)
|
2000-06-30 |
2002-12-03 |
Lam Research Corporation |
Capillary proximity heads for single wafer cleaning and drying
|
|
TW591653B
(en)
|
2000-08-08 |
2004-06-11 |
Koninkl Philips Electronics Nv |
Method of manufacturing an optically scannable information carrier
|
|
KR100866818B1
(ko)
|
2000-12-11 |
2008-11-04 |
가부시키가이샤 니콘 |
투영광학계 및 이 투영광학계를 구비한 노광장치
|
|
KR20040007444A
(ko)
|
2001-02-06 |
2004-01-24 |
가부시키가이샤 니콘 |
노광장치 및 노광방법, 그리고 디바이스 제조방법
|
|
WO2002091078A1
(en)
|
2001-05-07 |
2002-11-14 |
Massachusetts Institute Of Technology |
Methods and apparatus employing an index matching medium
|
|
JP2002343565A
(ja)
|
2001-05-18 |
2002-11-29 |
Sharp Corp |
有機ｌｅｄ表示パネルの製造方法、その方法により製造された有機ｌｅｄ表示パネル、並びに、その方法に用いられるベースフィルム及び基板
|
|
US6600547B2
(en)
|
2001-09-24 |
2003-07-29 |
Nikon Corporation |
Sliding seal
|
|
US20030091767A1
(en)
|
2001-11-02 |
2003-05-15 |
Podhajny Richard M. |
Anti-microbial packaging materials and methods for making the same
|
|
KR20050044371A
(ko)
|
2001-11-07 |
2005-05-12 |
어플라이드 머티어리얼스, 인코포레이티드 |
광학 스폿 그리드 어레이 프린터
|
|
DE10229818A1
(de)
|
2002-06-28 |
2004-01-15 |
Carl Zeiss Smt Ag |
Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
|
|
DE10210899A1
(de)
|
2002-03-08 |
2003-09-18 |
Zeiss Carl Smt Ag |
Refraktives Projektionsobjektiv für Immersions-Lithographie
|
|
US7092069B2
(en)
|
2002-03-08 |
2006-08-15 |
Carl Zeiss Smt Ag |
Projection exposure method and projection exposure system
|
|
TWI242691B
(en)
|
2002-08-23 |
2005-11-01 |
Nikon Corp |
Projection optical system and method for photolithography and exposure apparatus and method using same
|
|
US7383843B2
(en)
|
2002-09-30 |
2008-06-10 |
Lam Research Corporation |
Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
|
|
US7367345B1
(en)
|
2002-09-30 |
2008-05-06 |
Lam Research Corporation |
Apparatus and method for providing a confined liquid for immersion lithography
|
|
US7093375B2
(en)
|
2002-09-30 |
2006-08-22 |
Lam Research Corporation |
Apparatus and method for utilizing a meniscus in substrate processing
|
|
US6988326B2
(en)
|
2002-09-30 |
2006-01-24 |
Lam Research Corporation |
Phobic barrier meniscus separation and containment
|
|
US6954993B1
(en)
|
2002-09-30 |
2005-10-18 |
Lam Research Corporation |
Concentric proximity processing head
|
|
US6988327B2
(en)
|
2002-09-30 |
2006-01-24 |
Lam Research Corporation |
Methods and systems for processing a substrate using a dynamic liquid meniscus
|
|
US6788477B2
(en)
|
2002-10-22 |
2004-09-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Apparatus for method for immersion lithography
|
|
SG121819A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
DE60335595D1
(de)
|
2002-11-12 |
2011-02-17 |
Asml Netherlands Bv |
Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
|
|
US7110081B2
(en)
|
2002-11-12 |
2006-09-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
CN101382738B
(zh)
|
2002-11-12 |
2011-01-12 |
Asml荷兰有限公司 |
光刻投射装置
|
|
KR100585476B1
(ko)
|
2002-11-12 |
2006-06-07 |
에이에스엠엘 네델란즈 비.브이. |
리소그래피 장치 및 디바이스 제조방법
|
|
SG121822A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
SG131766A1
(en)
|
2002-11-18 |
2007-05-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
DE10253679A1
(de)
|
2002-11-18 |
2004-06-03 |
Infineon Technologies Ag |
Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
|
|
DE10258718A1
(de)
|
2002-12-09 |
2004-06-24 |
Carl Zeiss Smt Ag |
Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
|
|
WO2004053951A1
(ja)
|
2002-12-10 |
2004-06-24 |
Nikon Corporation |
露光方法及び露光装置並びにデバイス製造方法
|
|
WO2004053956A1
(ja)
|
2002-12-10 |
2004-06-24 |
Nikon Corporation |
露光装置及び露光方法、デバイス製造方法
|
|
WO2004053957A1
(ja)
|
2002-12-10 |
2004-06-24 |
Nikon Corporation |
面位置検出装置、露光方法、及びデバイス製造方法
|
|
KR20050062665A
(ko)
|
2002-12-10 |
2005-06-23 |
가부시키가이샤 니콘 |
노광장치 및 디바이스 제조방법
|
|
CN101424883B
(zh)
|
2002-12-10 |
2013-05-15 |
株式会社尼康 |
曝光设备和器件制造法
|
|
KR101157002B1
(ko)
|
2002-12-10 |
2012-06-21 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
|
DE10257766A1
(de)
|
2002-12-10 |
2004-07-15 |
Carl Zeiss Smt Ag |
Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
|
|
JP4179283B2
(ja)
|
2002-12-10 |
2008-11-12 |
株式会社ニコン |
光学素子及びその光学素子を用いた投影露光装置
|
|
KR101085372B1
(ko)
|
2002-12-10 |
2011-11-21 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
|
JP4352874B2
(ja)
|
2002-12-10 |
2009-10-28 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
|
EP1429190B1
(en)
|
2002-12-10 |
2012-05-09 |
Canon Kabushiki Kaisha |
Exposure apparatus and method
|
|
AU2003302830A1
(en)
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Exposure apparatus and method for manufacturing device
|
|
KR100967835B1
(ko)
|
2002-12-13 |
2010-07-05 |
코닌클리케 필립스 일렉트로닉스 엔.브이. |
층상 스폿 조사 방법 및 장치에서의 액체 제거
|
|
WO2004057590A1
(en)
|
2002-12-19 |
2004-07-08 |
Koninklijke Philips Electronics N.V. |
Method and device for irradiating spots on a layer
|
|
US7010958B2
(en)
|
2002-12-19 |
2006-03-14 |
Asml Holding N.V. |
High-resolution gas gauge proximity sensor
|
|
ATE365962T1
(de)
|
2002-12-19 |
2007-07-15 |
Koninkl Philips Electronics Nv |
Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
|
|
US6781670B2
(en)
|
2002-12-30 |
2004-08-24 |
Intel Corporation |
Immersion lithography
|
|
TWI247339B
(en)
|
2003-02-21 |
2006-01-11 |
Asml Holding Nv |
Lithographic printing with polarized light
|
|
KR101442361B1
(ko)
|
2003-02-26 |
2014-09-23 |
가부시키가이샤 니콘 |
노광 장치, 노광 방법 및 디바이스 제조 방법
|
|
US7206059B2
(en)
|
2003-02-27 |
2007-04-17 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
|
US6943941B2
(en)
|
2003-02-27 |
2005-09-13 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
|
US7029832B2
(en)
|
2003-03-11 |
2006-04-18 |
Samsung Electronics Co., Ltd. |
Immersion lithography methods using carbon dioxide
|
|
US20050164522A1
(en)
|
2003-03-24 |
2005-07-28 |
Kunz Roderick R. |
Optical fluids, and systems and methods of making and using the same
|
|
WO2004093159A2
(en)
|
2003-04-09 |
2004-10-28 |
Nikon Corporation |
Immersion lithography fluid control system
|
|
KR20170064003A
(ko)
|
2003-04-10 |
2017-06-08 |
가부시키가이샤 니콘 |
액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
|
|
KR101121655B1
(ko)
|
2003-04-10 |
2012-03-09 |
가부시키가이샤 니콘 |
액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
|
|
WO2004093160A2
(en)
|
2003-04-10 |
2004-10-28 |
Nikon Corporation |
Run-off path to collect liquid for an immersion lithography apparatus
|
|
WO2004090633A2
(en)
|
2003-04-10 |
2004-10-21 |
Nikon Corporation |
An electro-osmotic element for an immersion lithography apparatus
|
|
WO2004092830A2
(en)
|
2003-04-11 |
2004-10-28 |
Nikon Corporation |
Liquid jet and recovery system for immersion lithography
|
|
KR101304105B1
(ko)
|
2003-04-11 |
2013-09-05 |
가부시키가이샤 니콘 |
액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
|
|
SG2013077797A
(en)
|
2003-04-11 |
2017-02-27 |
Nippon Kogaku Kk |
Cleanup method for optics in immersion lithography
|
|
ATE542167T1
(de)
|
2003-04-17 |
2012-02-15 |
Nikon Corp |
Lithographisches immersionsgerät
|
|
JP4146755B2
(ja)
|
2003-05-09 |
2008-09-10 |
松下電器産業株式会社 |
パターン形成方法
|
|
JP4025683B2
(ja)
|
2003-05-09 |
2007-12-26 |
松下電器産業株式会社 |
パターン形成方法及び露光装置
|
|
TWI295414B
(en)
|
2003-05-13 |
2008-04-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
CN1307456C
(zh)
|
2003-05-23 |
2007-03-28 |
佳能株式会社 |
投影光学系统、曝光装置及器件的制造方法
|
|
TWI442694B
(zh)
|
2003-05-30 |
2014-06-21 |
Asml Netherlands Bv |
微影裝置及元件製造方法
|
|
US7213963B2
(en)
|
2003-06-09 |
2007-05-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP2261742A3
(en)
|
2003-06-11 |
2011-05-25 |
ASML Netherlands BV |
Lithographic apparatus and device manufacturing method.
|
|
JP4054285B2
(ja)
|
2003-06-12 |
2008-02-27 |
松下電器産業株式会社 |
パターン形成方法
|
|
JP4084710B2
(ja)
|
2003-06-12 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
|
US6867844B2
(en)
|
2003-06-19 |
2005-03-15 |
Asml Holding N.V. |
Immersion photolithography system and method using microchannel nozzles
|
|
JP4084712B2
(ja)
|
2003-06-23 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
|
JP4029064B2
(ja)
|
2003-06-23 |
2008-01-09 |
松下電器産業株式会社 |
パターン形成方法
|
|
JP2005019616A
(ja)
|
2003-06-25 |
2005-01-20 |
Canon Inc |
液浸式露光装置
|
|
JP4343597B2
(ja)
|
2003-06-25 |
2009-10-14 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
|
JP3862678B2
(ja)
*
|
2003-06-27 |
2006-12-27 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
|
EP1491956B1
(en)
|
2003-06-27 |
2006-09-06 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US6809794B1
(en)
|
2003-06-27 |
2004-10-26 |
Asml Holding N.V. |
Immersion photolithography system and method using inverted wafer-projection optics interface
|
|
EP1498778A1
(en)
|
2003-06-27 |
2005-01-19 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP1494074A1
(en)
|
2003-06-30 |
2005-01-05 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
WO2005006026A2
(en)
|
2003-07-01 |
2005-01-20 |
Nikon Corporation |
Using isotopically specified fluids as optical elements
|
|
KR101296501B1
(ko)
*
|
2003-07-09 |
2013-08-13 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
|
US7384149B2
(en)
|
2003-07-21 |
2008-06-10 |
Asml Netherlands B.V. |
Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
|
|
US7006209B2
(en)
|
2003-07-25 |
2006-02-28 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
|
US7326522B2
(en)
|
2004-02-11 |
2008-02-05 |
Asml Netherlands B.V. |
Device manufacturing method and a substrate
|
|
US7175968B2
(en)
|
2003-07-28 |
2007-02-13 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and a substrate
|
|
EP1503244A1
(en)
|
2003-07-28 |
2005-02-02 |
ASML Netherlands B.V. |
Lithographic projection apparatus and device manufacturing method
|
|
US7061578B2
(en)
|
2003-08-11 |
2006-06-13 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
|
US7700267B2
(en)
|
2003-08-11 |
2010-04-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion fluid for immersion lithography, and method of performing immersion lithography
|
|
US7579135B2
(en)
|
2003-08-11 |
2009-08-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lithography apparatus for manufacture of integrated circuits
|
|
US7085075B2
(en)
|
2003-08-12 |
2006-08-01 |
Carl Zeiss Smt Ag |
Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
|
|
US6844206B1
(en)
|
2003-08-21 |
2005-01-18 |
Advanced Micro Devices, Llp |
Refractive index system monitor and control for immersion lithography
|
|
US7070915B2
(en)
|
2003-08-29 |
2006-07-04 |
Tokyo Electron Limited |
Method and system for drying a substrate
|
|
US6954256B2
(en)
|
2003-08-29 |
2005-10-11 |
Asml Netherlands B.V. |
Gradient immersion lithography
|
|
US7014966B2
(en)
|
2003-09-02 |
2006-03-21 |
Advanced Micro Devices, Inc. |
Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
|
|
EP1660925B1
(en)
|
2003-09-03 |
2015-04-29 |
Nikon Corporation |
Apparatus and method for providing fluid for immersion lithography
|
|
US6961186B2
(en)
|
2003-09-26 |
2005-11-01 |
Takumi Technology Corp. |
Contact printing using a magnified mask image
|
|
US7369217B2
(en)
|
2003-10-03 |
2008-05-06 |
Micronic Laser Systems Ab |
Method and device for immersion lithography
|
|
US7678527B2
(en)
|
2003-10-16 |
2010-03-16 |
Intel Corporation |
Methods and compositions for providing photoresist with improved properties for contacting liquids
|
|
US7411653B2
(en)
|
2003-10-28 |
2008-08-12 |
Asml Netherlands B.V. |
Lithographic apparatus
|
|
US20070105050A1
(en)
|
2003-11-05 |
2007-05-10 |
Dsm Ip Assets B.V. |
Method and apparatus for producing microchips
|
|
US7924397B2
(en)
|
2003-11-06 |
2011-04-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Anti-corrosion layer on objective lens for liquid immersion lithography applications
|
|
JP4295712B2
(ja)
|
2003-11-14 |
2009-07-15 |
エーエスエムエル ネザーランズ ビー．ブイ． |
リソグラフィ装置及び装置製造方法
|
|
US8854602B2
(en)
|
2003-11-24 |
2014-10-07 |
Asml Netherlands B.V. |
Holding device for an optical element in an objective
|
|
US7545481B2
(en)
|
2003-11-24 |
2009-06-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7125652B2
(en)
|
2003-12-03 |
2006-10-24 |
Advanced Micro Devices, Inc. |
Immersion lithographic process using a conforming immersion medium
|
|
US7006196B2
(en)
|
2003-12-15 |
2006-02-28 |
Agilent Technologies, Inc. |
Real time image resizing for dynamic digital photolithography
|
|
KR101200654B1
(ko)
|
2003-12-15 |
2012-11-12 |
칼 짜이스 에스엠티 게엠베하 |
고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
|
|
WO2005106589A1
(en)
|
2004-05-04 |
2005-11-10 |
Carl Zeiss Smt Ag |
Microlithographic projection exposure apparatus and immersion liquid therefore
|
|
KR100965330B1
(ko)
|
2003-12-15 |
2010-06-22 |
칼 짜이스 에스엠티 아게 |
적어도 한 개의 액체 렌즈를 가진 마이크로리소그래피 투사대물렌즈로서의 대물렌즈
|
|
US20050185269A1
(en)
|
2003-12-19 |
2005-08-25 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
|
WO2005059645A2
(en)
|
2003-12-19 |
2005-06-30 |
Carl Zeiss Smt Ag |
Microlithography projection objective with crystal elements
|
|
US7460206B2
(en)
|
2003-12-19 |
2008-12-02 |
Carl Zeiss Smt Ag |
Projection objective for immersion lithography
|
|
US7589818B2
(en)
|
2003-12-23 |
2009-09-15 |
Asml Netherlands B.V. |
Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
|
|
US7394521B2
(en)
|
2003-12-23 |
2008-07-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7119884B2
(en)
|
2003-12-24 |
2006-10-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US20050147920A1
(en)
|
2003-12-30 |
2005-07-07 |
Chia-Hui Lin |
Method and system for immersion lithography
|
|
US7088422B2
(en)
|
2003-12-31 |
2006-08-08 |
International Business Machines Corporation |
Moving lens for immersion optical lithography
|
|
JP4371822B2
(ja)
|
2004-01-06 |
2009-11-25 |
キヤノン株式会社 |
露光装置
|
|
JP4429023B2
(ja)
|
2004-01-07 |
2010-03-10 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
|
US20050153424A1
(en)
|
2004-01-08 |
2005-07-14 |
Derek Coon |
Fluid barrier with transparent areas for immersion lithography
|
|
CN102207609B
(zh)
|
2004-01-14 |
2013-03-20 |
卡尔蔡司Smt有限责任公司 |
反射折射投影物镜
|
|
CN101799587B
(zh)
|
2004-01-16 |
2012-05-30 |
卡尔蔡司Smt有限责任公司 |
光学系统、投影系统及微结构半导体部件的制造方法
|
|
WO2005069078A1
(en)
|
2004-01-19 |
2005-07-28 |
Carl Zeiss Smt Ag |
Microlithographic projection exposure apparatus with immersion projection lens
|
|
KR101204157B1
(ko)
|
2004-01-20 |
2012-11-22 |
칼 짜이스 에스엠테 게엠베하 |
마이크로 리소그래픽 투영 노광 장치 및 그 투영 렌즈를 위한 측정 장치
|
|
US7026259B2
(en)
|
2004-01-21 |
2006-04-11 |
International Business Machines Corporation |
Liquid-filled balloons for immersion lithography
|
|
US7391501B2
(en)
|
2004-01-22 |
2008-06-24 |
Intel Corporation |
Immersion liquids with siloxane polymer for immersion lithography
|
|
US8852850B2
(en)
|
2004-02-03 |
2014-10-07 |
Rochester Institute Of Technology |
Method of photolithography using a fluid and a system thereof
|
|
EP1716454A1
(en)
|
2004-02-09 |
2006-11-02 |
Carl Zeiss SMT AG |
Projection objective for a microlithographic projection exposure apparatus
|
|
US7050146B2
(en)
|
2004-02-09 |
2006-05-23 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
JP2007522508A
(ja)
|
2004-02-13 |
2007-08-09 |
カール・ツアイス・エスエムテイ・アーゲー |
マイクロリソグラフィック投影露光装置のための投影対物レンズ
|
|
CN1922528A
(zh)
|
2004-02-18 |
2007-02-28 |
康宁股份有限公司 |
用于具有深紫外光的高数值孔径成象的反折射成象系统
|
|
US20050205108A1
(en)
|
2004-03-16 |
2005-09-22 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method and system for immersion lithography lens cleaning
|
|
US7027125B2
(en)
|
2004-03-25 |
2006-04-11 |
International Business Machines Corporation |
System and apparatus for photolithography
|
|
US7084960B2
(en)
|
2004-03-29 |
2006-08-01 |
Intel Corporation |
Lithography using controlled polarization
|
|
US7034917B2
(en)
|
2004-04-01 |
2006-04-25 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and device manufactured thereby
|
|
US7227619B2
(en)
|
2004-04-01 |
2007-06-05 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7295283B2
(en)
|
2004-04-02 |
2007-11-13 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
WO2005098504A1
(en)
|
2004-04-08 |
2005-10-20 |
Carl Zeiss Smt Ag |
Imaging system with mirror group
|
|
US7898642B2
(en)
|
2004-04-14 |
2011-03-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7271878B2
(en)
|
2004-04-22 |
2007-09-18 |
International Business Machines Corporation |
Wafer cell for immersion lithography
|
|
US7244665B2
(en)
|
2004-04-29 |
2007-07-17 |
Micron Technology, Inc. |
Wafer edge ring structures and methods of formation
|
|
US7379159B2
(en)
|
2004-05-03 |
2008-05-27 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP1747499A2
(en)
|
2004-05-04 |
2007-01-31 |
Nikon Corporation |
Apparatus and method for providing fluid for immersion lithography
|
|
US7091502B2
(en)
|
2004-05-12 |
2006-08-15 |
Taiwan Semiconductor Manufacturing, Co., Ltd. |
Apparatus and method for immersion lithography
|
|
JP2005327673A
(ja)
*
|
2004-05-17 |
2005-11-24 |
Univ Nagoya |
強誘電体電子線源、及び電子線生成方法
|
|
WO2005111689A2
(en)
|
2004-05-17 |
2005-11-24 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with intermediate images
|
|
US7616383B2
(en)
|
2004-05-18 |
2009-11-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7486381B2
(en)
|
2004-05-21 |
2009-02-03 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
CN100594430C
(zh)
|
2004-06-04 |
2010-03-17 |
卡尔蔡司Smt股份公司 |
用于测量光学成像系统的图像质量的系统
|
|
KR101199076B1
(ko)
|
2004-06-04 |
2012-11-07 |
칼 짜이스 에스엠티 게엠베하 |
강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소
|
|
US7701550B2
(en)
|
2004-08-19 |
2010-04-20 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|