GB1242527A
(en)
*
|
1967-10-20 |
1971-08-11 |
Kodak Ltd |
Optical instruments
|
US3573975A
(en)
*
|
1968-07-10 |
1971-04-06 |
Ibm |
Photochemical fabrication process
|
DE2963537D1
(en)
|
1979-07-27 |
1982-10-07 |
Tabarelli Werner W |
Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
|
FR2474708B1
(fr)
|
1980-01-24 |
1987-02-20 |
Dme |
Procede de microphotolithographie a haute resolution de traits
|
JPS5754317A
(en)
|
1980-09-19 |
1982-03-31 |
Hitachi Ltd |
Method and device for forming pattern
|
US4346164A
(en)
|
1980-10-06 |
1982-08-24 |
Werner Tabarelli |
Photolithographic method for the manufacture of integrated circuits
|
US4509852A
(en)
*
|
1980-10-06 |
1985-04-09 |
Werner Tabarelli |
Apparatus for the photolithographic manufacture of integrated circuit elements
|
US4390273A
(en)
*
|
1981-02-17 |
1983-06-28 |
Censor Patent-Und Versuchsanstalt |
Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
|
JPS57153433A
(en)
*
|
1981-03-18 |
1982-09-22 |
Hitachi Ltd |
Manufacturing device for semiconductor
|
DD221563A1
(de)
|
1983-09-14 |
1985-04-24 |
Mikroelektronik Zt Forsch Tech |
Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
|
DD224448A1
(de)
|
1984-03-01 |
1985-07-03 |
Zeiss Jena Veb Carl |
Einrichtung zur fotolithografischen strukturuebertragung
|
JPS6194342U
(ja)
*
|
1984-11-27 |
1986-06-18 |
|
|
US5040020A
(en)
|
1988-03-31 |
1991-08-13 |
Cornell Research Foundation, Inc. |
Self-aligned, high resolution resonant dielectric lithography
|
JPH069195B2
(ja)
*
|
1989-05-06 |
1994-02-02 |
大日本スクリーン製造株式会社 |
基板の表面処理方法
|
JPH03209479A
(ja)
|
1989-09-06 |
1991-09-12 |
Sanee Giken Kk |
露光方法
|
US5121256A
(en)
*
|
1991-03-14 |
1992-06-09 |
The Board Of Trustees Of The Leland Stanford Junior University |
Lithography system employing a solid immersion lens
|
JPH06124873A
(ja)
*
|
1992-10-09 |
1994-05-06 |
Canon Inc |
液浸式投影露光装置
|
JP2753930B2
(ja)
*
|
1992-11-27 |
1998-05-20 |
キヤノン株式会社 |
液浸式投影露光装置
|
US7365513B1
(en)
|
1994-04-01 |
2008-04-29 |
Nikon Corporation |
Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
|
US5528118A
(en)
*
|
1994-04-01 |
1996-06-18 |
Nikon Precision, Inc. |
Guideless stage with isolated reaction stage
|
US5874820A
(en)
*
|
1995-04-04 |
1999-02-23 |
Nikon Corporation |
Window frame-guided stage mechanism
|
US6989647B1
(en)
*
|
1994-04-01 |
2006-01-24 |
Nikon Corporation |
Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
|
US5623853A
(en)
*
|
1994-10-19 |
1997-04-29 |
Nikon Precision Inc. |
Precision motion stage with single guide beam and follower stage
|
US6008500A
(en)
|
1995-04-04 |
1999-12-28 |
Nikon Corporation |
Exposure apparatus having dynamically isolated reaction frame
|
JPH08316124A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
US5661092A
(en)
|
1995-09-01 |
1997-08-26 |
The University Of Connecticut |
Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof
|
US6104687A
(en)
*
|
1996-08-26 |
2000-08-15 |
Digital Papyrus Corporation |
Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
|
US5825043A
(en)
*
|
1996-10-07 |
1998-10-20 |
Nikon Precision Inc. |
Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
|
SG88824A1
(en)
*
|
1996-11-28 |
2002-05-21 |
Nikon Corp |
Projection exposure method
|
JP3728613B2
(ja)
|
1996-12-06 |
2005-12-21 |
株式会社ニコン |
走査型露光装置の調整方法及び該方法を使用する走査型露光装置
|
DE69717975T2
(de)
|
1996-12-24 |
2003-05-28 |
Asml Netherlands Bv |
In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
|
US5815246A
(en)
|
1996-12-24 |
1998-09-29 |
U.S. Philips Corporation |
Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device
|
USRE40043E1
(en)
*
|
1997-03-10 |
2008-02-05 |
Asml Netherlands B.V. |
Positioning device having two object holders
|
US5900354A
(en)
*
|
1997-07-03 |
1999-05-04 |
Batchelder; John Samuel |
Method for optical inspection and lithography
|
EP1039511A4
(en)
|
1997-12-12 |
2005-03-02 |
Nikon Corp |
PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS
|
US6208407B1
(en)
*
|
1997-12-22 |
2001-03-27 |
Asm Lithography B.V. |
Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
|
WO1999049504A1
(fr)
|
1998-03-26 |
1999-09-30 |
Nikon Corporation |
Procede et systeme d'exposition par projection
|
JP2000173884A
(ja)
*
|
1998-12-02 |
2000-06-23 |
Canon Inc |
デバイス製造装置および方法ならびにデバイス製造装置の配線・配管実装方法
|
WO2000048237A1
(fr)
*
|
1999-02-12 |
2000-08-17 |
Nikon Corporation |
Procede et appareil d'exposition
|
TWI242111B
(en)
|
1999-04-19 |
2005-10-21 |
Asml Netherlands Bv |
Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
|
JP2001021875A
(ja)
|
1999-07-12 |
2001-01-26 |
Seiko Epson Corp |
液晶装置及びこれを用いた投写型表示装置
|
CN1260772C
(zh)
|
1999-10-07 |
2006-06-21 |
株式会社尼康 |
载物台装置、载物台驱动方法和曝光装置及曝光方法
|
JP3679668B2
(ja)
|
1999-12-20 |
2005-08-03 |
キヤノン株式会社 |
インクジェット記録ヘッドの製造方法
|
US6995930B2
(en)
|
1999-12-29 |
2006-02-07 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
US7187503B2
(en)
|
1999-12-29 |
2007-03-06 |
Carl Zeiss Smt Ag |
Refractive projection objective for immersion lithography
|
JP2001272604A
(ja)
*
|
2000-03-27 |
2001-10-05 |
Olympus Optical Co Ltd |
液浸対物レンズおよびそれを用いた光学装置
|
US20020014403A1
(en)
*
|
2000-04-07 |
2002-02-07 |
Eiichi Hoshino |
Method of fabricating reflective mask, and methods and apparatus of detecting wet etching end point and inspecting side etching amount
|
US20020041377A1
(en)
*
|
2000-04-25 |
2002-04-11 |
Nikon Corporation |
Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
|
JP4503906B2
(ja)
|
2000-05-03 |
2010-07-14 |
エーエスエムエル ホールディング エヌ.ブイ. |
パージガスを用いた非接触型シール
|
US6488040B1
(en)
|
2000-06-30 |
2002-12-03 |
Lam Research Corporation |
Capillary proximity heads for single wafer cleaning and drying
|
TW591653B
(en)
*
|
2000-08-08 |
2004-06-11 |
Koninkl Philips Electronics Nv |
Method of manufacturing an optically scannable information carrier
|
KR100866818B1
(ko)
|
2000-12-11 |
2008-11-04 |
가부시키가이샤 니콘 |
투영광학계 및 이 투영광학계를 구비한 노광장치
|
WO2002063664A1
(fr)
|
2001-02-06 |
2002-08-15 |
Nikon Corporation |
Systeme et procede d'exposition et procede de production de dispositif
|
WO2002091078A1
(en)
|
2001-05-07 |
2002-11-14 |
Massachusetts Institute Of Technology |
Methods and apparatus employing an index matching medium
|
JP2002343565A
(ja)
*
|
2001-05-18 |
2002-11-29 |
Sharp Corp |
有機led表示パネルの製造方法、その方法により製造された有機led表示パネル、並びに、その方法に用いられるベースフィルム及び基板
|
US6600547B2
(en)
*
|
2001-09-24 |
2003-07-29 |
Nikon Corporation |
Sliding seal
|
US20030091767A1
(en)
*
|
2001-11-02 |
2003-05-15 |
Podhajny Richard M. |
Anti-microbial packaging materials and methods for making the same
|
CN1791839A
(zh)
*
|
2001-11-07 |
2006-06-21 |
应用材料有限公司 |
光点格栅阵列光刻机
|
DE10210899A1
(de)
|
2002-03-08 |
2003-09-18 |
Zeiss Carl Smt Ag |
Refraktives Projektionsobjektiv für Immersions-Lithographie
|
DE10229818A1
(de)
|
2002-06-28 |
2004-01-15 |
Carl Zeiss Smt Ag |
Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
|
US7092069B2
(en)
|
2002-03-08 |
2006-08-15 |
Carl Zeiss Smt Ag |
Projection exposure method and projection exposure system
|
US7362508B2
(en)
|
2002-08-23 |
2008-04-22 |
Nikon Corporation |
Projection optical system and method for photolithography and exposure apparatus and method using same
|
US7383843B2
(en)
|
2002-09-30 |
2008-06-10 |
Lam Research Corporation |
Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
|
US6988327B2
(en)
*
|
2002-09-30 |
2006-01-24 |
Lam Research Corporation |
Methods and systems for processing a substrate using a dynamic liquid meniscus
|
US7093375B2
(en)
|
2002-09-30 |
2006-08-22 |
Lam Research Corporation |
Apparatus and method for utilizing a meniscus in substrate processing
|
US6988326B2
(en)
|
2002-09-30 |
2006-01-24 |
Lam Research Corporation |
Phobic barrier meniscus separation and containment
|
US7367345B1
(en)
|
2002-09-30 |
2008-05-06 |
Lam Research Corporation |
Apparatus and method for providing a confined liquid for immersion lithography
|
US6954993B1
(en)
|
2002-09-30 |
2005-10-18 |
Lam Research Corporation |
Concentric proximity processing head
|
US6788477B2
(en)
|
2002-10-22 |
2004-09-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Apparatus for method for immersion lithography
|
US7110081B2
(en)
|
2002-11-12 |
2006-09-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
SG121822A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
CN101382738B
(zh)
|
2002-11-12 |
2011-01-12 |
Asml荷兰有限公司 |
光刻投射装置
|
DE60335595D1
(de)
|
2002-11-12 |
2011-02-17 |
Asml Netherlands Bv |
Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
|
CN100470367C
(zh)
|
2002-11-12 |
2009-03-18 |
Asml荷兰有限公司 |
光刻装置和器件制造方法
|
JP3953460B2
(ja)
|
2002-11-12 |
2007-08-08 |
エーエスエムエル ネザーランズ ビー.ブイ. |
リソグラフィ投影装置
|
DE10253679A1
(de)
|
2002-11-18 |
2004-06-03 |
Infineon Technologies Ag |
Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
|
SG131766A1
(en)
|
2002-11-18 |
2007-05-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
DE10258718A1
(de)
|
2002-12-09 |
2004-06-24 |
Carl Zeiss Smt Ag |
Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
|
AU2003289272A1
(en)
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Surface position detection apparatus, exposure method, and device porducing method
|
KR20120127755A
(ko)
|
2002-12-10 |
2012-11-23 |
가부시키가이샤 니콘 |
노광장치 및 디바이스 제조방법
|
DE10257766A1
(de)
|
2002-12-10 |
2004-07-15 |
Carl Zeiss Smt Ag |
Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
|
AU2003302831A1
(en)
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Exposure method, exposure apparatus and method for manufacturing device
|
WO2004053956A1
(ja)
|
2002-12-10 |
2004-06-24 |
Nikon Corporation |
露光装置及び露光方法、デバイス製造方法
|
JP4352874B2
(ja)
|
2002-12-10 |
2009-10-28 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
KR101085372B1
(ko)
|
2002-12-10 |
2011-11-21 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
EP1429190B1
(en)
|
2002-12-10 |
2012-05-09 |
Canon Kabushiki Kaisha |
Exposure apparatus and method
|
EP1571700A4
(en)
|
2002-12-10 |
2007-09-12 |
Nikon Corp |
OPTICAL DEVICE AND PROJECTION EXPOSURE DEVICE USING THE OPTICAL DEVICE
|
CN101872135B
(zh)
|
2002-12-10 |
2013-07-31 |
株式会社尼康 |
曝光设备和器件制造法
|
SG165169A1
(en)
|
2002-12-10 |
2010-10-28 |
Nikon Corp |
Liquid immersion exposure apparatus
|
SG152063A1
(en)
|
2002-12-10 |
2009-05-29 |
Nikon Corp |
Exposure apparatus and method for producing device
|
EP1573730B1
(en)
|
2002-12-13 |
2009-02-25 |
Koninklijke Philips Electronics N.V. |
Liquid removal in a method and device for irradiating spots on a layer
|
US7010958B2
(en)
|
2002-12-19 |
2006-03-14 |
Asml Holding N.V. |
High-resolution gas gauge proximity sensor
|
AU2003295177A1
(en)
|
2002-12-19 |
2004-07-14 |
Koninklijke Philips Electronics N.V. |
Method and device for irradiating spots on a layer
|
KR100971441B1
(ko)
|
2002-12-19 |
2010-07-21 |
코닌클리케 필립스 일렉트로닉스 엔.브이. |
레이어 상의 스폿을 조사하기 위한 방법 및 장치
|
US6781670B2
(en)
|
2002-12-30 |
2004-08-24 |
Intel Corporation |
Immersion lithography
|
TWI247339B
(en)
|
2003-02-21 |
2006-01-11 |
Asml Holding Nv |
Lithographic printing with polarized light
|
EP2945016B1
(en)
*
|
2003-02-26 |
2017-09-06 |
Nikon Corporation |
Exposure apparatus, exposure method, and method for producing device
|
US7206059B2
(en)
|
2003-02-27 |
2007-04-17 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
US6943941B2
(en)
|
2003-02-27 |
2005-09-13 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
US7029832B2
(en)
|
2003-03-11 |
2006-04-18 |
Samsung Electronics Co., Ltd. |
Immersion lithography methods using carbon dioxide
|
US20050164522A1
(en)
|
2003-03-24 |
2005-07-28 |
Kunz Roderick R. |
Optical fluids, and systems and methods of making and using the same
|
JP4488004B2
(ja)
|
2003-04-09 |
2010-06-23 |
株式会社ニコン |
液浸リソグラフィ流体制御システム
|
CN105700301B
(zh)
*
|
2003-04-10 |
2018-05-25 |
株式会社尼康 |
包括用于沉浸光刻装置的真空清除的环境系统
|
WO2004090633A2
(en)
|
2003-04-10 |
2004-10-21 |
Nikon Corporation |
An electro-osmotic element for an immersion lithography apparatus
|
EP2921905B1
(en)
|
2003-04-10 |
2017-12-27 |
Nikon Corporation |
Run-off path to collect liquid for an immersion lithography apparatus
|
KR20140139139A
(ko)
|
2003-04-10 |
2014-12-04 |
가부시키가이샤 니콘 |
액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
|
EP1614001B1
(en)
|
2003-04-11 |
2009-11-25 |
Nikon Corporation |
Cleanup method for optics in immersion lithography
|
CN101002140B
(zh)
|
2003-04-11 |
2010-12-08 |
株式会社尼康 |
保持平板印刷投射透镜下面的浸没流体的设备和方法
|
JP4582089B2
(ja)
|
2003-04-11 |
2010-11-17 |
株式会社ニコン |
液浸リソグラフィ用の液体噴射回収システム
|
ATE542167T1
(de)
|
2003-04-17 |
2012-02-15 |
Nikon Corp |
Lithographisches immersionsgerät
|
JP4146755B2
(ja)
|
2003-05-09 |
2008-09-10 |
松下電器産業株式会社 |
パターン形成方法
|
JP4025683B2
(ja)
|
2003-05-09 |
2007-12-26 |
松下電器産業株式会社 |
パターン形成方法及び露光装置
|
TWI295414B
(en)
|
2003-05-13 |
2008-04-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
TWI282487B
(en)
|
2003-05-23 |
2007-06-11 |
Canon Kk |
Projection optical system, exposure apparatus, and device manufacturing method
|
TWI347741B
(en)
|
2003-05-30 |
2011-08-21 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
US7213963B2
(en)
|
2003-06-09 |
2007-05-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP2261742A3
(en)
|
2003-06-11 |
2011-05-25 |
ASML Netherlands BV |
Lithographic apparatus and device manufacturing method.
|
JP4054285B2
(ja)
|
2003-06-12 |
2008-02-27 |
松下電器産業株式会社 |
パターン形成方法
|
JP4084710B2
(ja)
|
2003-06-12 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
US6867844B2
(en)
|
2003-06-19 |
2005-03-15 |
Asml Holding N.V. |
Immersion photolithography system and method using microchannel nozzles
|
JP4084712B2
(ja)
|
2003-06-23 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
JP4029064B2
(ja)
|
2003-06-23 |
2008-01-09 |
松下電器産業株式会社 |
パターン形成方法
|
JP4343597B2
(ja)
|
2003-06-25 |
2009-10-14 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
JP2005019616A
(ja)
|
2003-06-25 |
2005-01-20 |
Canon Inc |
液浸式露光装置
|
US6809794B1
(en)
|
2003-06-27 |
2004-10-26 |
Asml Holding N.V. |
Immersion photolithography system and method using inverted wafer-projection optics interface
|
JP3862678B2
(ja)
|
2003-06-27 |
2006-12-27 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
EP1491956B1
(en)
|
2003-06-27 |
2006-09-06 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP1498778A1
(en)
|
2003-06-27 |
2005-01-19 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP1494074A1
(en)
|
2003-06-30 |
2005-01-05 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP1639391A4
(en)
|
2003-07-01 |
2009-04-29 |
Nikon Corp |
USE OF FLUIDS SPECIFIED ISOTOPICALLY AS OPTICAL ELEMENTS
|
KR101296501B1
(ko)
|
2003-07-09 |
2013-08-13 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
US7384149B2
(en)
|
2003-07-21 |
2008-06-10 |
Asml Netherlands B.V. |
Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
|
US7006209B2
(en)
|
2003-07-25 |
2006-02-28 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
US7175968B2
(en)
|
2003-07-28 |
2007-02-13 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and a substrate
|
US7326522B2
(en)
|
2004-02-11 |
2008-02-05 |
Asml Netherlands B.V. |
Device manufacturing method and a substrate
|
EP1503244A1
(en)
|
2003-07-28 |
2005-02-02 |
ASML Netherlands B.V. |
Lithographic projection apparatus and device manufacturing method
|
US7700267B2
(en)
|
2003-08-11 |
2010-04-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion fluid for immersion lithography, and method of performing immersion lithography
|
US7061578B2
(en)
|
2003-08-11 |
2006-06-13 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
US7579135B2
(en)
|
2003-08-11 |
2009-08-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lithography apparatus for manufacture of integrated circuits
|
US7085075B2
(en)
|
2003-08-12 |
2006-08-01 |
Carl Zeiss Smt Ag |
Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
|
US6844206B1
(en)
|
2003-08-21 |
2005-01-18 |
Advanced Micro Devices, Llp |
Refractive index system monitor and control for immersion lithography
|
US7070915B2
(en)
|
2003-08-29 |
2006-07-04 |
Tokyo Electron Limited |
Method and system for drying a substrate
|
US6954256B2
(en)
|
2003-08-29 |
2005-10-11 |
Asml Netherlands B.V. |
Gradient immersion lithography
|
US7014966B2
(en)
|
2003-09-02 |
2006-03-21 |
Advanced Micro Devices, Inc. |
Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
|
KR101238114B1
(ko)
|
2003-09-03 |
2013-02-27 |
가부시키가이샤 니콘 |
액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
|
US6961186B2
(en)
|
2003-09-26 |
2005-11-01 |
Takumi Technology Corp. |
Contact printing using a magnified mask image
|
US7369217B2
(en)
|
2003-10-03 |
2008-05-06 |
Micronic Laser Systems Ab |
Method and device for immersion lithography
|
US7678527B2
(en)
|
2003-10-16 |
2010-03-16 |
Intel Corporation |
Methods and compositions for providing photoresist with improved properties for contacting liquids
|
US7411653B2
(en)
|
2003-10-28 |
2008-08-12 |
Asml Netherlands B.V. |
Lithographic apparatus
|
US20070105050A1
(en)
|
2003-11-05 |
2007-05-10 |
Dsm Ip Assets B.V. |
Method and apparatus for producing microchips
|
US7924397B2
(en)
|
2003-11-06 |
2011-04-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Anti-corrosion layer on objective lens for liquid immersion lithography applications
|
US7528929B2
(en)
|
2003-11-14 |
2009-05-05 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP4747263B2
(ja)
|
2003-11-24 |
2011-08-17 |
カール・ツァイス・エスエムティー・ゲーエムベーハー |
オブジェクティブにおける光学素子のための保持装置
|
US7545481B2
(en)
|
2003-11-24 |
2009-06-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7125652B2
(en)
|
2003-12-03 |
2006-10-24 |
Advanced Micro Devices, Inc. |
Immersion lithographic process using a conforming immersion medium
|
WO2005059654A1
(en)
|
2003-12-15 |
2005-06-30 |
Carl Zeiss Smt Ag |
Objective as a microlithography projection objective with at least one liquid lens
|
WO2005059617A2
(en)
|
2003-12-15 |
2005-06-30 |
Carl Zeiss Smt Ag |
Projection objective having a high aperture and a planar end surface
|
US7460206B2
(en)
|
2003-12-19 |
2008-12-02 |
Carl Zeiss Smt Ag |
Projection objective for immersion lithography
|
US20050185269A1
(en)
|
2003-12-19 |
2005-08-25 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
JP5102492B2
(ja)
|
2003-12-19 |
2012-12-19 |
カール・ツァイス・エスエムティー・ゲーエムベーハー |
結晶素子を有するマイクロリソグラフィー投影用対物レンズ
|
US7589818B2
(en)
|
2003-12-23 |
2009-09-15 |
Asml Netherlands B.V. |
Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
|
US7394521B2
(en)
|
2003-12-23 |
2008-07-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7119884B2
(en)
|
2003-12-24 |
2006-10-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20050147920A1
(en)
|
2003-12-30 |
2005-07-07 |
Chia-Hui Lin |
Method and system for immersion lithography
|
US7088422B2
(en)
|
2003-12-31 |
2006-08-08 |
International Business Machines Corporation |
Moving lens for immersion optical lithography
|
JP4371822B2
(ja)
|
2004-01-06 |
2009-11-25 |
キヤノン株式会社 |
露光装置
|
JP4429023B2
(ja)
|
2004-01-07 |
2010-03-10 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
US20050153424A1
(en)
|
2004-01-08 |
2005-07-14 |
Derek Coon |
Fluid barrier with transparent areas for immersion lithography
|
CN102207609B
(zh)
|
2004-01-14 |
2013-03-20 |
卡尔蔡司Smt有限责任公司 |
反射折射投影物镜
|
ATE539383T1
(de)
|
2004-01-16 |
2012-01-15 |
Zeiss Carl Smt Gmbh |
Projektionssystem mit einem polarisationsmodulierenden optischen element mit variabler dicke
|
WO2005069078A1
(en)
|
2004-01-19 |
2005-07-28 |
Carl Zeiss Smt Ag |
Microlithographic projection exposure apparatus with immersion projection lens
|
JP4843503B2
(ja)
|
2004-01-20 |
2011-12-21 |
カール・ツァイス・エスエムティー・ゲーエムベーハー |
マイクロリソグラフィ投影露光装置および投影レンズのための測定装置
|
US7026259B2
(en)
|
2004-01-21 |
2006-04-11 |
International Business Machines Corporation |
Liquid-filled balloons for immersion lithography
|
US7391501B2
(en)
|
2004-01-22 |
2008-06-24 |
Intel Corporation |
Immersion liquids with siloxane polymer for immersion lithography
|
WO2005074606A2
(en)
|
2004-02-03 |
2005-08-18 |
Rochester Institute Of Technology |
Method of photolithography using a fluid and a system thereof
|
EP1716454A1
(en)
|
2004-02-09 |
2006-11-02 |
Carl Zeiss SMT AG |
Projection objective for a microlithographic projection exposure apparatus
|
US7050146B2
(en)
|
2004-02-09 |
2006-05-23 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
KR101115111B1
(ko)
|
2004-02-13 |
2012-04-16 |
칼 짜이스 에스엠티 게엠베하 |
마이크로 리소그래프 투영 노광 장치 투영 대물 렌즈
|
CN1922528A
(zh)
|
2004-02-18 |
2007-02-28 |
康宁股份有限公司 |
用于具有深紫外光的高数值孔径成象的反折射成象系统
|
US20050205108A1
(en)
|
2004-03-16 |
2005-09-22 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method and system for immersion lithography lens cleaning
|
US7027125B2
(en)
|
2004-03-25 |
2006-04-11 |
International Business Machines Corporation |
System and apparatus for photolithography
|
US7084960B2
(en)
|
2004-03-29 |
2006-08-01 |
Intel Corporation |
Lithography using controlled polarization
|
US7034917B2
(en)
|
2004-04-01 |
2006-04-25 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and device manufactured thereby
|
US7227619B2
(en)
|
2004-04-01 |
2007-06-05 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7295283B2
(en)
|
2004-04-02 |
2007-11-13 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
WO2005098504A1
(en)
|
2004-04-08 |
2005-10-20 |
Carl Zeiss Smt Ag |
Imaging system with mirror group
|
US7898642B2
(en)
|
2004-04-14 |
2011-03-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7271878B2
(en)
|
2004-04-22 |
2007-09-18 |
International Business Machines Corporation |
Wafer cell for immersion lithography
|
US7244665B2
(en)
|
2004-04-29 |
2007-07-17 |
Micron Technology, Inc. |
Wafer edge ring structures and methods of formation
|
US7379159B2
(en)
|
2004-05-03 |
2008-05-27 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP1747499A2
(en)
|
2004-05-04 |
2007-01-31 |
Nikon Corporation |
Apparatus and method for providing fluid for immersion lithography
|
US20060244938A1
(en)
|
2004-05-04 |
2006-11-02 |
Karl-Heinz Schuster |
Microlitographic projection exposure apparatus and immersion liquid therefore
|
US7091502B2
(en)
|
2004-05-12 |
2006-08-15 |
Taiwan Semiconductor Manufacturing, Co., Ltd. |
Apparatus and method for immersion lithography
|
JP2005327673A
(ja)
*
|
2004-05-17 |
2005-11-24 |
Univ Nagoya |
強誘電体電子線源、及び電子線生成方法
|
US8107162B2
(en)
|
2004-05-17 |
2012-01-31 |
Carl Zeiss Smt Gmbh |
Catadioptric projection objective with intermediate images
|
US7616383B2
(en)
|
2004-05-18 |
2009-11-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7486381B2
(en)
|
2004-05-21 |
2009-02-03 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
KR101199076B1
(ko)
|
2004-06-04 |
2012-11-07 |
칼 짜이스 에스엠티 게엠베하 |
강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소
|
US7796274B2
(en)
|
2004-06-04 |
2010-09-14 |
Carl Zeiss Smt Ag |
System for measuring the image quality of an optical imaging system
|
US7701550B2
(en)
*
|
2004-08-19 |
2010-04-20 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|