JP2006270057A5 - - Google Patents

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Publication number
JP2006270057A5
JP2006270057A5 JP2006026249A JP2006026249A JP2006270057A5 JP 2006270057 A5 JP2006270057 A5 JP 2006270057A5 JP 2006026249 A JP2006026249 A JP 2006026249A JP 2006026249 A JP2006026249 A JP 2006026249A JP 2006270057 A5 JP2006270057 A5 JP 2006270057A5
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JP
Japan
Prior art keywords
processed
liquid
contact angle
exposure apparatus
holding unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006026249A
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English (en)
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JP2006270057A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006026249A priority Critical patent/JP2006270057A/ja
Priority claimed from JP2006026249A external-priority patent/JP2006270057A/ja
Priority to US11/276,382 priority patent/US20060192930A1/en
Publication of JP2006270057A publication Critical patent/JP2006270057A/ja
Publication of JP2006270057A5 publication Critical patent/JP2006270057A5/ja
Withdrawn legal-status Critical Current

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Claims (3)

  1. レチクルのパターンを被処理体に投影する投影光学系を備え、前記被処理体の表面と前記投影光学系の最終光学素子との間に液体を満たし、前記投影光学系及び前記液体を介して前記被処理体を露光する露光装置であって、
    前記被処理体の周囲に配置され、前記被処理体の表面と同じ高さの表面を持ち、前記液体を保持する液体保持部を有し、
    前記液体保持部の表面は、前記液体と前記被処理体の表面との第1の接触角が前記液体と前記液体保持部の表面との第2の接触角以下であり、且つ、前記液体と前記被処理体の表面との第1の後退接触角が前記液体と前記液体保持部の表面との第2の後退接触角以下であることを特徴とする露光装置。
  2. 前記第2の後退接触角は、90°以上であることを特徴とする請求項1記載の露光装置。
  3. 請求項1又は2に記載の露光装置を用いて被処理体を露光するステップと、
    露光された前記被処理体を現像するステップとを有することを特徴とするデバイス製造方法。
JP2006026249A 2005-02-28 2006-02-02 露光装置 Withdrawn JP2006270057A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006026249A JP2006270057A (ja) 2005-02-28 2006-02-02 露光装置
US11/276,382 US20060192930A1 (en) 2005-02-28 2006-02-27 Exposure apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005054814 2005-02-28
JP2006026249A JP2006270057A (ja) 2005-02-28 2006-02-02 露光装置

Publications (2)

Publication Number Publication Date
JP2006270057A JP2006270057A (ja) 2006-10-05
JP2006270057A5 true JP2006270057A5 (ja) 2009-03-19

Family

ID=36931657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006026249A Withdrawn JP2006270057A (ja) 2005-02-28 2006-02-02 露光装置

Country Status (2)

Country Link
US (1) US20060192930A1 (ja)
JP (1) JP2006270057A (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101520591B1 (ko) 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
TWI605315B (zh) 2003-12-03 2017-11-11 Nippon Kogaku Kk Exposure device, exposure method, and device manufacturing method
JP2006269942A (ja) * 2005-03-25 2006-10-05 Canon Inc 露光装置及びデバイス製造方法
JP4858062B2 (ja) * 2005-04-27 2012-01-18 株式会社ニコン 露光方法、露光装置、デバイス製造方法、及び膜の評価方法
CN102520592A (zh) * 2005-04-27 2012-06-27 株式会社尼康 曝光方法、曝光装置、组件制造方法、以及膜的评估方法
JP4708876B2 (ja) * 2005-06-21 2011-06-22 キヤノン株式会社 液浸露光装置
US7468779B2 (en) * 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8111374B2 (en) * 2005-09-09 2012-02-07 Nikon Corporation Analysis method, exposure method, and device manufacturing method
US20070177119A1 (en) * 2006-02-02 2007-08-02 Keiko Chiba Exposure apparatus and device manufacturing method
CN100590173C (zh) * 2006-03-24 2010-02-17 北京有色金属研究总院 一种荧光粉及其制造方法和所制成的电光源
US8134685B2 (en) * 2007-03-23 2012-03-13 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US7673278B2 (en) * 2007-11-29 2010-03-02 Tokyo Electron Limited Enhanced process yield using a hot-spot library
JP2010098172A (ja) * 2008-10-17 2010-04-30 Canon Inc 液体回収装置、露光装置及びデバイス製造方法
JP2010251745A (ja) 2009-04-10 2010-11-04 Asml Netherlands Bv 液浸リソグラフィ装置及びデバイス製造方法
US10317804B2 (en) * 2015-12-08 2019-06-11 Asml Netherlands B.V. Substrate table, lithographic apparatus and method of operating a lithographic apparatus
CN113189849B (zh) * 2021-04-22 2023-08-11 中国科学院光电技术研究所 一种近场光刻浸没系统及其浸没单元和接口模组

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI251127B (en) * 2002-11-12 2006-03-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101101737B1 (ko) * 2002-12-10 2012-01-05 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
JP4295712B2 (ja) * 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及び装置製造方法
TWI605315B (zh) * 2003-12-03 2017-11-11 Nippon Kogaku Kk Exposure device, exposure method, and device manufacturing method
EP1758185B1 (en) * 2004-05-31 2018-10-17 Panasonic Intellectual Property Management Co., Ltd. Polyelectrolyte fuel cell-use separator and polyelectrolyte fuel cell
JP2006269942A (ja) * 2005-03-25 2006-10-05 Canon Inc 露光装置及びデバイス製造方法
JP4708876B2 (ja) * 2005-06-21 2011-06-22 キヤノン株式会社 液浸露光装置

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