DE206607C
(ja)
|
|
|
|
|
DE242880C
(ja)
|
|
|
|
|
DE224448C
(ja)
|
|
|
|
|
DE221563C
(ja)
|
|
|
|
|
US3243321A
(en)
|
1962-11-02 |
1966-03-29 |
Atlas Copco Ab |
Method of teflon coating of metals
|
GB1242527A
(en)
*
|
1967-10-20 |
1971-08-11 |
Kodak Ltd |
Optical instruments
|
US3573975A
(en)
*
|
1968-07-10 |
1971-04-06 |
Ibm |
Photochemical fabrication process
|
ATE1462T1
(de)
|
1979-07-27 |
1982-08-15 |
Werner W. Dr. Tabarelli |
Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe.
|
FR2474708B1
(fr)
|
1980-01-24 |
1987-02-20 |
Dme |
Procede de microphotolithographie a haute resolution de traits
|
JPS5754317A
(en)
*
|
1980-09-19 |
1982-03-31 |
Hitachi Ltd |
Method and device for forming pattern
|
US4346164A
(en)
*
|
1980-10-06 |
1982-08-24 |
Werner Tabarelli |
Photolithographic method for the manufacture of integrated circuits
|
US4509852A
(en)
*
|
1980-10-06 |
1985-04-09 |
Werner Tabarelli |
Apparatus for the photolithographic manufacture of integrated circuit elements
|
US4390273A
(en)
*
|
1981-02-17 |
1983-06-28 |
Censor Patent-Und Versuchsanstalt |
Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
|
JPS57153433A
(en)
|
1981-03-18 |
1982-09-22 |
Hitachi Ltd |
Manufacturing device for semiconductor
|
US4405701A
(en)
|
1981-07-29 |
1983-09-20 |
Western Electric Co. |
Methods of fabricating a photomask
|
NL8201396A
(nl)
|
1982-04-01 |
1983-11-01 |
Dow Chemical Nederland |
Zilver katalysator en een werkwijze voor de bereiding daarvan.
|
JPS58202448A
(ja)
|
1982-05-21 |
1983-11-25 |
Hitachi Ltd |
露光装置
|
DD206607A1
(de)
|
1982-06-16 |
1984-02-01 |
Mikroelektronik Zt Forsch Tech |
Verfahren und vorrichtung zur beseitigung von interferenzeffekten
|
JPS5919912A
(ja)
|
1982-07-26 |
1984-02-01 |
Hitachi Ltd |
液浸距離保持装置
|
EP0101266A3
(en)
|
1982-08-09 |
1985-04-03 |
Milliken Research Corporation |
Printing method and apparatus
|
DD242880A1
(de)
|
1983-01-31 |
1987-02-11 |
Kuch Karl Heinz |
Einrichtung zur fotolithografischen strukturuebertragung
|
DD221563A1
(de)
|
1983-09-14 |
1985-04-24 |
Mikroelektronik Zt Forsch Tech |
Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
|
DD224448A1
(de)
|
1984-03-01 |
1985-07-03 |
Zeiss Jena Veb Carl |
Einrichtung zur fotolithografischen strukturuebertragung
|
EP0206607A3
(en)
|
1985-06-18 |
1987-09-02 |
Comlinear Corporation |
Wideband feedback amplifier
|
JPS6265326A
(ja)
|
1985-09-18 |
1987-03-24 |
Hitachi Ltd |
露光装置
|
JPS6265326U
(ja)
|
1985-10-16 |
1987-04-23 |
|
|
JPS62121417A
(ja)
|
1985-11-22 |
1987-06-02 |
Hitachi Ltd |
液浸対物レンズ装置
|
JPS62121417U
(ja)
|
1986-01-24 |
1987-08-01 |
|
|
FR2595471B1
(fr)
|
1986-03-06 |
1988-06-10 |
Production Rech Appliquees |
Dispositif d'ellipsometrie spectroscopique a fibres optiques
|
JPS63157419A
(ja)
|
1986-12-22 |
1988-06-30 |
Toshiba Corp |
微細パタ−ン転写装置
|
JPS63157419U
(ja)
|
1987-03-31 |
1988-10-14 |
|
|
US5040020A
(en)
*
|
1988-03-31 |
1991-08-13 |
Cornell Research Foundation, Inc. |
Self-aligned, high resolution resonant dielectric lithography
|
JPH03209479A
(ja)
|
1989-09-06 |
1991-09-12 |
Sanee Giken Kk |
露光方法
|
US5121256A
(en)
*
|
1991-03-14 |
1992-06-09 |
The Board Of Trustees Of The Leland Stanford Junior University |
Lithography system employing a solid immersion lens
|
JPH04305915A
(ja)
*
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
JPH04305917A
(ja)
*
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
JP3203698B2
(ja)
|
1991-09-02 |
2001-08-27 |
株式会社ニコン |
顕微鏡の液浸対物レンズ及び防水キャップ
|
JPH0562877A
(ja)
|
1991-09-02 |
1993-03-12 |
Yasuko Shinohara |
光によるlsi製造縮小投影露光装置の光学系
|
JPH06124873A
(ja)
*
|
1992-10-09 |
1994-05-06 |
Canon Inc |
液浸式投影露光装置
|
JP2753930B2
(ja)
*
|
1992-11-27 |
1998-05-20 |
キヤノン株式会社 |
液浸式投影露光装置
|
KR940013872A
(ko)
*
|
1992-12-05 |
1994-07-16 |
와따나베 히로시 |
리사이클 oa 시트
|
JP2520833B2
(ja)
|
1992-12-21 |
1996-07-31 |
東京エレクトロン株式会社 |
浸漬式の液処理装置
|
DE4344908A1
(de)
|
1993-01-08 |
1994-07-14 |
Nikon Corp |
Kondensorlinsensystem
|
JPH06208058A
(ja)
|
1993-01-13 |
1994-07-26 |
Olympus Optical Co Ltd |
顕微鏡対物レンズ
|
JP3747951B2
(ja)
|
1994-11-07 |
2006-02-22 |
株式会社ニコン |
反射屈折光学系
|
JPH07220990A
(ja)
|
1994-01-28 |
1995-08-18 |
Hitachi Ltd |
パターン形成方法及びその露光装置
|
EP0772514B1
(de)
|
1994-07-29 |
1998-12-23 |
Wilhelm Barthlott |
Selbstreinigende oberflächen von gegenständen sowie verfahren zur herstellung derselben
|
JPH08316124A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
JPH08316125A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
WO1998009278A1
(en)
*
|
1996-08-26 |
1998-03-05 |
Digital Papyrus Technologies |
Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
|
US5825043A
(en)
*
|
1996-10-07 |
1998-10-20 |
Nikon Precision Inc. |
Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
|
JP3612920B2
(ja)
|
1997-02-14 |
2005-01-26 |
ソニー株式会社 |
光学記録媒体の原盤作製用露光装置
|
JPH10255319A
(ja)
|
1997-03-12 |
1998-09-25 |
Hitachi Maxell Ltd |
原盤露光装置及び方法
|
JP3747566B2
(ja)
*
|
1997-04-23 |
2006-02-22 |
株式会社ニコン |
液浸型露光装置
|
JP3817836B2
(ja)
|
1997-06-10 |
2006-09-06 |
株式会社ニコン |
露光装置及びその製造方法並びに露光方法及びデバイス製造方法
|
US5900354A
(en)
*
|
1997-07-03 |
1999-05-04 |
Batchelder; John Samuel |
Method for optical inspection and lithography
|
JPH11176727A
(ja)
|
1997-12-11 |
1999-07-02 |
Nikon Corp |
投影露光装置
|
EP1039511A4
(en)
|
1997-12-12 |
2005-03-02 |
Nikon Corp |
PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS
|
JP3650257B2
(ja)
|
1997-12-19 |
2005-05-18 |
東京瓦斯株式会社 |
加熱調理器
|
JPH11195576A
(ja)
|
1997-12-26 |
1999-07-21 |
Canon Inc |
露光装置
|
JP3629361B2
(ja)
|
1998-02-17 |
2005-03-16 |
エスアイアイ・ナノテクノロジー株式会社 |
試料ステージ
|
JPH11239758A
(ja)
*
|
1998-02-26 |
1999-09-07 |
Dainippon Screen Mfg Co Ltd |
基板処理装置
|
US6068539A
(en)
|
1998-03-10 |
2000-05-30 |
Lam Research Corporation |
Wafer polishing device with movable window
|
AU2747999A
(en)
*
|
1998-03-26 |
1999-10-18 |
Nikon Corporation |
Projection exposure method and system
|
WO1999060361A1
(fr)
*
|
1998-05-19 |
1999-11-25 |
Nikon Corporation |
Instrument et procede de mesure d'aberrations, appareil et procede de sensibilisation par projection incorporant cet instrument, et procede de fabrication de dispositifs associe
|
US6395130B1
(en)
|
1998-06-08 |
2002-05-28 |
Speedfam-Ipec Corporation |
Hydrophobic optical endpoint light pipes for chemical mechanical polishing
|
JP2000012453A
(ja)
|
1998-06-18 |
2000-01-14 |
Nikon Corp |
露光装置及びその使用方法、露光方法、並びにマスクの製造方法
|
JP2000058436A
(ja)
|
1998-08-11 |
2000-02-25 |
Nikon Corp |
投影露光装置及び露光方法
|
JP2000141699A
(ja)
|
1998-11-13 |
2000-05-23 |
Canon Inc |
画像形成方法およびその装置ならびにプリントヘッド
|
US6635311B1
(en)
|
1999-01-07 |
2003-10-21 |
Northwestern University |
Methods utilizing scanning probe microscope tips and products therefor or products thereby
|
JP2000240717A
(ja)
*
|
1999-02-19 |
2000-09-05 |
Canon Inc |
能動的除振装置
|
DE19914007A1
(de)
|
1999-03-29 |
2000-10-05 |
Creavis Tech & Innovation Gmbh |
Strukturierte flüssigkeitsabweisende Oberflächen mit ortsdefinierten flüssigkeitsbenetzenden Teilbereichen
|
TWI242111B
(en)
*
|
1999-04-19 |
2005-10-21 |
Asml Netherlands Bv |
Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
|
US6495202B1
(en)
|
1999-09-08 |
2002-12-17 |
Nikon Corporation |
Method for manufacturing an optical element containing fluoride in at least its surface portions
|
JP4504479B2
(ja)
|
1999-09-21 |
2010-07-14 |
オリンパス株式会社 |
顕微鏡用液浸対物レンズ
|
WO2001027978A1
(fr)
|
1999-10-07 |
2001-04-19 |
Nikon Corporation |
Substrat, dispositif a etage, procede d'attaque d'etage, systeme d'exposition et procede d'exposition
|
JP3836644B2
(ja)
|
1999-10-29 |
2006-10-25 |
信越化学工業株式会社 |
フォトレジスト組成物
|
DE19957928C2
(de)
|
1999-12-01 |
2002-09-26 |
Helmut Hummel |
Verfahren zur lokalen Hydrophobierung von hydrophilen Oberflächen
|
US7187503B2
(en)
|
1999-12-29 |
2007-03-06 |
Carl Zeiss Smt Ag |
Refractive projection objective for immersion lithography
|
US6995930B2
(en)
*
|
1999-12-29 |
2006-02-07 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
JP2001272503A
(ja)
*
|
2000-03-24 |
2001-10-05 |
Fuji Photo Film Co Ltd |
親水化ハードコートフィルム及び透明積層フィルム
|
JP2002033271A
(ja)
|
2000-05-12 |
2002-01-31 |
Nikon Corp |
投影露光方法、それを用いたデバイス製造方法、及び投影露光装置
|
US7234477B2
(en)
|
2000-06-30 |
2007-06-26 |
Lam Research Corporation |
Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
|
TW591653B
(en)
|
2000-08-08 |
2004-06-11 |
Koninkl Philips Electronics Nv |
Method of manufacturing an optically scannable information carrier
|
KR100866818B1
(ko)
*
|
2000-12-11 |
2008-11-04 |
가부시키가이샤 니콘 |
투영광학계 및 이 투영광학계를 구비한 노광장치
|
JP2003016092A
(ja)
|
2001-04-26 |
2003-01-17 |
Hitachi Ltd |
類似文書検索方法及びその実施システム並びにその処理プログラム
|
US20020163629A1
(en)
*
|
2001-05-07 |
2002-11-07 |
Michael Switkes |
Methods and apparatus employing an index matching medium
|
JP3626921B2
(ja)
*
|
2001-06-29 |
2005-03-09 |
株式会社クリスタルシステム |
レンズ用無機親水性硬質層形成材料、レンズ用無機親水性硬質層形成方法
|
JP2003015092A
(ja)
*
|
2001-06-29 |
2003-01-15 |
Crystal System:Kk |
メガネレンズ
|
US6600547B2
(en)
*
|
2001-09-24 |
2003-07-29 |
Nikon Corporation |
Sliding seal
|
US20030087292A1
(en)
|
2001-10-04 |
2003-05-08 |
Shiping Chen |
Methods and systems for promoting interactions between probes and target molecules in fluid in microarrays
|
US6897941B2
(en)
*
|
2001-11-07 |
2005-05-24 |
Applied Materials, Inc. |
Optical spot grid array printer
|
JP2003161806A
(ja)
|
2001-11-27 |
2003-06-06 |
Nikon Corp |
光学素子および光学機器
|
WO2004063959A1
(en)
|
2001-12-06 |
2004-07-29 |
Coudert Brothers Llp |
Shareholder protection plan
|
JP4075379B2
(ja)
|
2002-01-08 |
2008-04-16 |
株式会社デンソー |
フッ素樹脂の表面処理方法およびフッ素樹脂を用いたプリント配線基板の製造方法
|
DE10202513B4
(de)
|
2002-01-23 |
2006-03-30 |
Infineon Technologies Ag |
Selbstreinigende Oberflächen für bildgebende Sensoren
|
EP1480258A4
(en)
*
|
2002-01-29 |
2005-11-09 |
Nikon Corp |
EXPOSURE DEVICE AND EXPOSURE METHOD
|
FR2836238B1
(fr)
|
2002-02-19 |
2004-04-02 |
Kis |
Procede pour transferer une image numerique en vue de sa restitution visuelle, et dispositif pour la mise en oeuvre de ce procede
|
US7092069B2
(en)
|
2002-03-08 |
2006-08-15 |
Carl Zeiss Smt Ag |
Projection exposure method and projection exposure system
|
DE10229818A1
(de)
*
|
2002-06-28 |
2004-01-15 |
Carl Zeiss Smt Ag |
Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
|
DE10210899A1
(de)
|
2002-03-08 |
2003-09-18 |
Zeiss Carl Smt Ag |
Refraktives Projektionsobjektiv für Immersions-Lithographie
|
JP4117530B2
(ja)
|
2002-04-04 |
2008-07-16 |
セイコーエプソン株式会社 |
液量判定装置、露光装置、および液量判定方法
|
AU2003281495A1
(en)
|
2002-07-24 |
2004-02-09 |
Pfizer Products Inc. |
Pharmaceutical laser drilling system with means for checking the correct orientation of each dosage
|
WO2004019128A2
(en)
|
2002-08-23 |
2004-03-04 |
Nikon Corporation |
Projection optical system and method for photolithography and exposure apparatus and method using same
|
US7240679B2
(en)
|
2002-09-30 |
2007-07-10 |
Lam Research Corporation |
System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold
|
US7093375B2
(en)
|
2002-09-30 |
2006-08-22 |
Lam Research Corporation |
Apparatus and method for utilizing a meniscus in substrate processing
|
US7252097B2
(en)
|
2002-09-30 |
2007-08-07 |
Lam Research Corporation |
System and method for integrating in-situ metrology within a wafer process
|
US7069937B2
(en)
|
2002-09-30 |
2006-07-04 |
Lam Research Corporation |
Vertical proximity processor
|
US7367345B1
(en)
|
2002-09-30 |
2008-05-06 |
Lam Research Corporation |
Apparatus and method for providing a confined liquid for immersion lithography
|
US6954993B1
(en)
|
2002-09-30 |
2005-10-18 |
Lam Research Corporation |
Concentric proximity processing head
|
US6988326B2
(en)
|
2002-09-30 |
2006-01-24 |
Lam Research Corporation |
Phobic barrier meniscus separation and containment
|
US6788477B2
(en)
*
|
2002-10-22 |
2004-09-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Apparatus for method for immersion lithography
|
US7110081B2
(en)
*
|
2002-11-12 |
2006-09-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
CN101382738B
(zh)
*
|
2002-11-12 |
2011-01-12 |
Asml荷兰有限公司 |
光刻投射装置
|
EP1429188B1
(en)
|
2002-11-12 |
2013-06-19 |
ASML Netherlands B.V. |
Lithographic projection apparatus
|
KR100588124B1
(ko)
*
|
2002-11-12 |
2006-06-09 |
에이에스엠엘 네델란즈 비.브이. |
리소그래피장치 및 디바이스제조방법
|
DE60335595D1
(de)
*
|
2002-11-12 |
2011-02-17 |
Asml Netherlands Bv |
Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
|
SG121822A1
(en)
*
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
JP3977324B2
(ja)
*
|
2002-11-12 |
2007-09-19 |
エーエスエムエル ネザーランズ ビー.ブイ. |
リソグラフィ装置
|
SG131766A1
(en)
*
|
2002-11-18 |
2007-05-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
DE10253679A1
(de)
*
|
2002-11-18 |
2004-06-03 |
Infineon Technologies Ag |
Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
|
US20040263969A1
(en)
|
2002-11-25 |
2004-12-30 |
Lenny Lipton |
Lenticular antireflection display
|
DE10258718A1
(de)
|
2002-12-09 |
2004-06-24 |
Carl Zeiss Smt Ag |
Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
|
WO2004053953A1
(ja)
|
2002-12-10 |
2004-06-24 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
JP4232449B2
(ja)
|
2002-12-10 |
2009-03-04 |
株式会社ニコン |
露光方法、露光装置、及びデバイス製造方法
|
JP4595320B2
(ja)
|
2002-12-10 |
2010-12-08 |
株式会社ニコン |
露光装置、及びデバイス製造方法
|
US7948604B2
(en)
|
2002-12-10 |
2011-05-24 |
Nikon Corporation |
Exposure apparatus and method for producing device
|
KR101085372B1
(ko)
|
2002-12-10 |
2011-11-21 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
EP1429190B1
(en)
|
2002-12-10 |
2012-05-09 |
Canon Kabushiki Kaisha |
Exposure apparatus and method
|
AU2003289272A1
(en)
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Surface position detection apparatus, exposure method, and device porducing method
|
KR101157002B1
(ko)
|
2002-12-10 |
2012-06-21 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
KR20050085236A
(ko)
|
2002-12-10 |
2005-08-29 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
CN1717776A
(zh)
|
2002-12-10 |
2006-01-04 |
株式会社尼康 |
光学元件及使用该光学元件的投影曝光装置
|
DE10257766A1
(de)
|
2002-12-10 |
2004-07-15 |
Carl Zeiss Smt Ag |
Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
|
JP4352874B2
(ja)
|
2002-12-10 |
2009-10-28 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
EP1571697A4
(en)
|
2002-12-10 |
2007-07-04 |
Nikon Corp |
EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD
|
AU2003302831A1
(en)
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Exposure method, exposure apparatus and method for manufacturing device
|
AU2003289271A1
(en)
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Exposure apparatus, exposure method and method for manufacturing device
|
US7242455B2
(en)
*
|
2002-12-10 |
2007-07-10 |
Nikon Corporation |
Exposure apparatus and method for producing device
|
WO2004055803A1
(en)
|
2002-12-13 |
2004-07-01 |
Koninklijke Philips Electronics N.V. |
Liquid removal in a method and device for irradiating spots on a layer
|
EP1732075A3
(en)
|
2002-12-19 |
2007-02-21 |
Koninklijke Philips Electronics N.V. |
Method and device for irradiating spots on a layer
|
US7010958B2
(en)
*
|
2002-12-19 |
2006-03-14 |
Asml Holding N.V. |
High-resolution gas gauge proximity sensor
|
JP4364805B2
(ja)
|
2002-12-19 |
2009-11-18 |
コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ |
層上にスポットを照射する方法及び装置
|
DE10261775A1
(de)
*
|
2002-12-20 |
2004-07-01 |
Carl Zeiss Smt Ag |
Vorrichtung zur optischen Vermessung eines Abbildungssystems
|
US7088458B1
(en)
*
|
2002-12-23 |
2006-08-08 |
Carl Zeiss Smt Ag |
Apparatus and method for measuring an optical imaging system, and detector unit
|
US6781670B2
(en)
|
2002-12-30 |
2004-08-24 |
Intel Corporation |
Immersion lithography
|
US7130037B1
(en)
*
|
2003-01-09 |
2006-10-31 |
Kla-Tencor Technologies Corp. |
Systems for inspecting wafers and reticles with increased resolution
|
US7027231B2
(en)
|
2003-02-14 |
2006-04-11 |
Fujinon Corporation |
Endoscope objective lens
|
TW200424767A
(en)
*
|
2003-02-20 |
2004-11-16 |
Tokyo Ohka Kogyo Co Ltd |
Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
|
US7090964B2
(en)
*
|
2003-02-21 |
2006-08-15 |
Asml Holding N.V. |
Lithographic printing with polarized light
|
JP4352930B2
(ja)
|
2003-02-26 |
2009-10-28 |
株式会社ニコン |
露光装置、露光方法及びデバイス製造方法
|
TW200500813A
(en)
|
2003-02-26 |
2005-01-01 |
Nikon Corp |
Exposure apparatus and method, and method of producing device
|
US7206059B2
(en)
*
|
2003-02-27 |
2007-04-17 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
US6943941B2
(en)
*
|
2003-02-27 |
2005-09-13 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
US7029832B2
(en)
*
|
2003-03-11 |
2006-04-18 |
Samsung Electronics Co., Ltd. |
Immersion lithography methods using carbon dioxide
|
US20050164522A1
(en)
|
2003-03-24 |
2005-07-28 |
Kunz Roderick R. |
Optical fluids, and systems and methods of making and using the same
|
KR101181688B1
(ko)
|
2003-03-25 |
2012-09-19 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법
|
TWI244117B
(en)
|
2003-03-26 |
2005-11-21 |
Komatsu Denshi Kinzoku Kk |
Semiconductor epitaxy wafer
|
JP4902201B2
(ja)
|
2003-04-07 |
2012-03-21 |
株式会社ニコン |
露光装置、露光方法及びデバイス製造方法
|
KR101177331B1
(ko)
|
2003-04-09 |
2012-08-30 |
가부시키가이샤 니콘 |
액침 리소그래피 유체 제어 시스템
|
JP4650413B2
(ja)
|
2003-04-10 |
2011-03-16 |
株式会社ニコン |
液浸リソグフラフィ装置用の移送領域を含む環境システム
|
SG2012050829A
(en)
*
|
2003-04-10 |
2015-07-30 |
Nippon Kogaku Kk |
Environmental system including vacuum scavange for an immersion lithography apparatus
|
EP2921905B1
(en)
|
2003-04-10 |
2017-12-27 |
Nikon Corporation |
Run-off path to collect liquid for an immersion lithography apparatus
|
JP4656057B2
(ja)
|
2003-04-10 |
2011-03-23 |
株式会社ニコン |
液浸リソグラフィ装置用電気浸透素子
|
WO2004092830A2
(en)
|
2003-04-11 |
2004-10-28 |
Nikon Corporation |
Liquid jet and recovery system for immersion lithography
|
SG185136A1
(en)
|
2003-04-11 |
2012-11-29 |
Nikon Corp |
Cleanup method for optics in immersion lithography
|
KR101225884B1
(ko)
|
2003-04-11 |
2013-01-28 |
가부시키가이샤 니콘 |
액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
|
US6938774B2
(en)
|
2003-04-15 |
2005-09-06 |
Entegris, Inc. |
Tray carrier with ultraphobic surfaces
|
WO2004095135A2
(en)
|
2003-04-17 |
2004-11-04 |
Nikon Corporation |
Optical arrangement of autofocus elements for use with immersion lithography
|
JP4871726B2
(ja)
|
2003-04-28 |
2012-02-08 |
ナノシス・インク. |
超疎液性表面、その作製法及び用途
|
TWI237307B
(en)
|
2003-05-01 |
2005-08-01 |
Nikon Corp |
Optical projection system, light exposing apparatus and light exposing method
|
KR101516142B1
(ko)
|
2003-05-06 |
2015-05-04 |
가부시키가이샤 니콘 |
투영 광학계, 노광 장치 및 노광 방법
|
JP4146755B2
(ja)
*
|
2003-05-09 |
2008-09-10 |
松下電器産業株式会社 |
パターン形成方法
|
JP4025683B2
(ja)
*
|
2003-05-09 |
2007-12-26 |
松下電器産業株式会社 |
パターン形成方法及び露光装置
|
TWI295414B
(en)
*
|
2003-05-13 |
2008-04-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
WO2004102646A1
(ja)
|
2003-05-15 |
2004-11-25 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
EP1479738A1
(en)
|
2003-05-20 |
2004-11-24 |
DSM IP Assets B.V. |
Hydrophobic coatings comprising reactive nano-particles
|
TWI282487B
(en)
|
2003-05-23 |
2007-06-11 |
Canon Kk |
Projection optical system, exposure apparatus, and device manufacturing method
|
TW200509205A
(en)
|
2003-05-23 |
2005-03-01 |
Nippon Kogaku Kk |
Exposure method and device-manufacturing method
|
TWI470671B
(zh)
|
2003-05-23 |
2015-01-21 |
尼康股份有限公司 |
Exposure method and exposure apparatus, and device manufacturing method
|
JP2005277363A
(ja)
*
|
2003-05-23 |
2005-10-06 |
Nikon Corp |
露光装置及びデバイス製造方法
|
JP2004356205A
(ja)
|
2003-05-27 |
2004-12-16 |
Tadahiro Omi |
スキャン型露光装置および露光方法
|
KR101728664B1
(ko)
|
2003-05-28 |
2017-05-02 |
가부시키가이샤 니콘 |
노광 방법, 노광 장치, 및 디바이스 제조 방법
|
US7274472B2
(en)
*
|
2003-05-28 |
2007-09-25 |
Timbre Technologies, Inc. |
Resolution enhanced optical metrology
|
TWI347741B
(en)
|
2003-05-30 |
2011-08-21 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
EP2261741A3
(en)
*
|
2003-06-11 |
2011-05-25 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP4084710B2
(ja)
*
|
2003-06-12 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
JP4054285B2
(ja)
*
|
2003-06-12 |
2008-02-27 |
松下電器産業株式会社 |
パターン形成方法
|
KR101940892B1
(ko)
|
2003-06-13 |
2019-01-21 |
가부시키가이샤 니콘 |
노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
|
US6867844B2
(en)
*
|
2003-06-19 |
2005-03-15 |
Asml Holding N.V. |
Immersion photolithography system and method using microchannel nozzles
|
KR101289979B1
(ko)
|
2003-06-19 |
2013-07-26 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조방법
|
JP4029064B2
(ja)
*
|
2003-06-23 |
2008-01-09 |
松下電器産業株式会社 |
パターン形成方法
|
JP4084712B2
(ja)
*
|
2003-06-23 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
JP2005019616A
(ja)
*
|
2003-06-25 |
2005-01-20 |
Canon Inc |
液浸式露光装置
|
JP4343597B2
(ja)
*
|
2003-06-25 |
2009-10-14 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
JP3862678B2
(ja)
*
|
2003-06-27 |
2006-12-27 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
EP1491956B1
(en)
|
2003-06-27 |
2006-09-06 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US6809794B1
(en)
|
2003-06-27 |
2004-10-26 |
Asml Holding N.V. |
Immersion photolithography system and method using inverted wafer-projection optics interface
|
EP1498778A1
(en)
*
|
2003-06-27 |
2005-01-19 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP1494074A1
(en)
|
2003-06-30 |
2005-01-05 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20040263959A1
(en)
*
|
2003-06-30 |
2004-12-30 |
Dixon Arthur E. |
Scanning beam optical imaging system for macroscopic imaging of an object
|
EP1975721A1
(en)
|
2003-06-30 |
2008-10-01 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7236232B2
(en)
|
2003-07-01 |
2007-06-26 |
Nikon Corporation |
Using isotopically specified fluids as optical elements
|
EP2853943B1
(en)
|
2003-07-08 |
2016-11-16 |
Nikon Corporation |
Wafer table for immersion lithography
|
EP2264532B1
(en)
|
2003-07-09 |
2012-10-31 |
Nikon Corporation |
Exposure apparatus and device manufacturing method
|
WO2005006417A1
(ja)
|
2003-07-09 |
2005-01-20 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
SG109000A1
(en)
*
|
2003-07-16 |
2005-02-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
US7384149B2
(en)
|
2003-07-21 |
2008-06-10 |
Asml Netherlands B.V. |
Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
|
JP2006528835A
(ja)
|
2003-07-24 |
2006-12-21 |
カール・ツアイス・エスエムテイ・アーゲー |
マイクロリソグラフィ投影露光装置および浸漬液体を浸漬空間へ導入する方法
|
US7006209B2
(en)
|
2003-07-25 |
2006-02-28 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
EP1503244A1
(en)
|
2003-07-28 |
2005-02-02 |
ASML Netherlands B.V. |
Lithographic projection apparatus and device manufacturing method
|
US7326522B2
(en)
|
2004-02-11 |
2008-02-05 |
Asml Netherlands B.V. |
Device manufacturing method and a substrate
|
US7175968B2
(en)
*
|
2003-07-28 |
2007-02-13 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and a substrate
|
US7579135B2
(en)
|
2003-08-11 |
2009-08-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lithography apparatus for manufacture of integrated circuits
|
US7700267B2
(en)
|
2003-08-11 |
2010-04-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion fluid for immersion lithography, and method of performing immersion lithography
|
US7061578B2
(en)
|
2003-08-11 |
2006-06-13 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
US7085075B2
(en)
|
2003-08-12 |
2006-08-01 |
Carl Zeiss Smt Ag |
Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
|
US6844206B1
(en)
|
2003-08-21 |
2005-01-18 |
Advanced Micro Devices, Llp |
Refractive index system monitor and control for immersion lithography
|
TWI263859B
(en)
|
2003-08-29 |
2006-10-11 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
US6954256B2
(en)
*
|
2003-08-29 |
2005-10-11 |
Asml Netherlands B.V. |
Gradient immersion lithography
|
SG145780A1
(en)
|
2003-08-29 |
2008-09-29 |
Nikon Corp |
Exposure apparatus and device fabricating method
|
US7070915B2
(en)
*
|
2003-08-29 |
2006-07-04 |
Tokyo Electron Limited |
Method and system for drying a substrate
|
TWI245163B
(en)
|
2003-08-29 |
2005-12-11 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
US7014966B2
(en)
*
|
2003-09-02 |
2006-03-21 |
Advanced Micro Devices, Inc. |
Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
|
KR20170070264A
(ko)
|
2003-09-03 |
2017-06-21 |
가부시키가이샤 니콘 |
액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
|
JP4378136B2
(ja)
*
|
2003-09-04 |
2009-12-02 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
JP3870182B2
(ja)
*
|
2003-09-09 |
2007-01-17 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
US6961186B2
(en)
*
|
2003-09-26 |
2005-11-01 |
Takumi Technology Corp. |
Contact printing using a magnified mask image
|
TW201809911A
(zh)
*
|
2003-09-29 |
2018-03-16 |
尼康股份有限公司 |
曝光裝置及曝光方法、以及元件製造方法
|
US7369217B2
(en)
|
2003-10-03 |
2008-05-06 |
Micronic Laser Systems Ab |
Method and device for immersion lithography
|
WO2005036623A1
(ja)
|
2003-10-08 |
2005-04-21 |
Zao Nikon Co., Ltd. |
基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
|
JP4524601B2
(ja)
|
2003-10-09 |
2010-08-18 |
株式会社ニコン |
露光装置及び露光方法、デバイス製造方法
|
TWI598934B
(zh)
|
2003-10-09 |
2017-09-11 |
Nippon Kogaku Kk |
Exposure apparatus, exposure method, and device manufacturing method
|
US7678527B2
(en)
*
|
2003-10-16 |
2010-03-16 |
Intel Corporation |
Methods and compositions for providing photoresist with improved properties for contacting liquids
|
WO2005043607A1
(ja)
|
2003-10-31 |
2005-05-12 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
JP2005159322A
(ja)
*
|
2003-10-31 |
2005-06-16 |
Nikon Corp |
定盤、ステージ装置及び露光装置並びに露光方法
|
US7924397B2
(en)
*
|
2003-11-06 |
2011-04-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Anti-corrosion layer on objective lens for liquid immersion lithography applications
|
JP4295712B2
(ja)
*
|
2003-11-14 |
2009-07-15 |
エーエスエムエル ネザーランズ ビー.ブイ. |
リソグラフィ装置及び装置製造方法
|
EP1695148B1
(en)
|
2003-11-24 |
2015-10-28 |
Carl Zeiss SMT GmbH |
Immersion objective
|
US7545481B2
(en)
*
|
2003-11-24 |
2009-06-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7125652B2
(en)
|
2003-12-03 |
2006-10-24 |
Advanced Micro Devices, Inc. |
Immersion lithographic process using a conforming immersion medium
|
JP2005175016A
(ja)
*
|
2003-12-08 |
2005-06-30 |
Canon Inc |
基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
|
JP2005175034A
(ja)
*
|
2003-12-09 |
2005-06-30 |
Canon Inc |
露光装置
|
WO2005059654A1
(en)
|
2003-12-15 |
2005-06-30 |
Carl Zeiss Smt Ag |
Objective as a microlithography projection objective with at least one liquid lens
|
KR101941351B1
(ko)
|
2003-12-15 |
2019-01-22 |
가부시키가이샤 니콘 |
스테이지 장치, 노광 장치, 및 노광 방법
|
KR101200654B1
(ko)
|
2003-12-15 |
2012-11-12 |
칼 짜이스 에스엠티 게엠베하 |
고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
|
JP4323946B2
(ja)
|
2003-12-19 |
2009-09-02 |
キヤノン株式会社 |
露光装置
|
US7460206B2
(en)
|
2003-12-19 |
2008-12-02 |
Carl Zeiss Smt Ag |
Projection objective for immersion lithography
|
JP5102492B2
(ja)
|
2003-12-19 |
2012-12-19 |
カール・ツァイス・エスエムティー・ゲーエムベーハー |
結晶素子を有するマイクロリソグラフィー投影用対物レンズ
|
US20050185269A1
(en)
|
2003-12-19 |
2005-08-25 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
US7394521B2
(en)
|
2003-12-23 |
2008-07-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7589818B2
(en)
*
|
2003-12-23 |
2009-09-15 |
Asml Netherlands B.V. |
Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
|
US7119884B2
(en)
|
2003-12-24 |
2006-10-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP2005191381A
(ja)
*
|
2003-12-26 |
2005-07-14 |
Canon Inc |
露光方法及び装置
|
JP2005191393A
(ja)
*
|
2003-12-26 |
2005-07-14 |
Canon Inc |
露光方法及び装置
|
US20050147920A1
(en)
|
2003-12-30 |
2005-07-07 |
Chia-Hui Lin |
Method and system for immersion lithography
|
US7088422B2
(en)
|
2003-12-31 |
2006-08-08 |
International Business Machines Corporation |
Moving lens for immersion optical lithography
|
DE602004027162D1
(de)
|
2004-01-05 |
2010-06-24 |
Nippon Kogaku Kk |
Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren
|
JP4371822B2
(ja)
|
2004-01-06 |
2009-11-25 |
キヤノン株式会社 |
露光装置
|
JP4429023B2
(ja)
*
|
2004-01-07 |
2010-03-10 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
US20050153424A1
(en)
|
2004-01-08 |
2005-07-14 |
Derek Coon |
Fluid barrier with transparent areas for immersion lithography
|
DE602005008707D1
(de)
|
2004-01-14 |
2008-09-18 |
Zeiss Carl Smt Ag |
Catadioptrisches projektionsobjektiv
|
KR101295439B1
(ko)
|
2004-01-16 |
2013-08-09 |
칼 짜이스 에스엠티 게엠베하 |
편광변조 광학소자
|
WO2005069078A1
(en)
|
2004-01-19 |
2005-07-28 |
Carl Zeiss Smt Ag |
Microlithographic projection exposure apparatus with immersion projection lens
|
JP4843503B2
(ja)
|
2004-01-20 |
2011-12-21 |
カール・ツァイス・エスエムティー・ゲーエムベーハー |
マイクロリソグラフィ投影露光装置および投影レンズのための測定装置
|
US7026259B2
(en)
|
2004-01-21 |
2006-04-11 |
International Business Machines Corporation |
Liquid-filled balloons for immersion lithography
|
US7391501B2
(en)
|
2004-01-22 |
2008-06-24 |
Intel Corporation |
Immersion liquids with siloxane polymer for immersion lithography
|
WO2005074606A2
(en)
|
2004-02-03 |
2005-08-18 |
Rochester Institute Of Technology |
Method of photolithography using a fluid and a system thereof
|
EP1713114B1
(en)
|
2004-02-03 |
2018-09-19 |
Nikon Corporation |
Exposure apparatus and device manufacturing method
|
JP4018647B2
(ja)
*
|
2004-02-09 |
2007-12-05 |
キヤノン株式会社 |
投影露光装置およびデバイス製造方法
|
US7050146B2
(en)
|
2004-02-09 |
2006-05-23 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
WO2005076084A1
(en)
|
2004-02-09 |
2005-08-18 |
Carl Zeiss Smt Ag |
Projection objective for a microlithographic projection exposure apparatus
|
US20070165198A1
(en)
|
2004-02-13 |
2007-07-19 |
Carl Zeiss Smt Ag |
Projection objective for a microlithographic projection exposure apparatus
|
WO2005081030A1
(en)
|
2004-02-18 |
2005-09-01 |
Corning Incorporated |
Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
|
AU2004316031B2
(en)
|
2004-02-25 |
2011-04-21 |
Accenture Global Services Limited |
RFID protected media system and method that provides dynamic downloadable media
|
US20050205108A1
(en)
*
|
2004-03-16 |
2005-09-22 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method and system for immersion lithography lens cleaning
|
JP2005286068A
(ja)
*
|
2004-03-29 |
2005-10-13 |
Canon Inc |
露光装置及び方法
|
JP4510494B2
(ja)
*
|
2004-03-29 |
2010-07-21 |
キヤノン株式会社 |
露光装置
|
US20050231695A1
(en)
|
2004-04-15 |
2005-10-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method and system for immersion lithography using high PH immersion fluid
|
WO2005119368A2
(en)
*
|
2004-06-04 |
2005-12-15 |
Carl Zeiss Smt Ag |
System for measuring the image quality of an optical imaging system
|
KR101344142B1
(ko)
*
|
2005-04-25 |
2013-12-23 |
가부시키가이샤 니콘 |
노광 방법, 노광 장치, 및 디바이스 제조 방법
|
JP2006339448A
(ja)
*
|
2005-06-02 |
2006-12-14 |
Canon Inc |
受光ユニットを有する露光装置
|
US7924416B2
(en)
*
|
2005-06-22 |
2011-04-12 |
Nikon Corporation |
Measurement apparatus, exposure apparatus, and device manufacturing method
|
KR20080108341A
(ko)
*
|
2006-04-03 |
2008-12-12 |
가부시키가이샤 니콘 |
액침 액체에 대해 소용매성인 입사면 및 광학 윈도우
|
JP2007335662A
(ja)
*
|
2006-06-15 |
2007-12-27 |
Canon Inc |
露光装置
|