JP5200057B2 - リソグラフィ装置 - Google Patents
リソグラフィ装置 Download PDFInfo
- Publication number
- JP5200057B2 JP5200057B2 JP2010116482A JP2010116482A JP5200057B2 JP 5200057 B2 JP5200057 B2 JP 5200057B2 JP 2010116482 A JP2010116482 A JP 2010116482A JP 2010116482 A JP2010116482 A JP 2010116482A JP 5200057 B2 JP5200057 B2 JP 5200057B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- immersion liquid
- liquid
- sensor
- projection system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000007788 liquid Substances 0.000 claims description 195
- 238000007654 immersion Methods 0.000 claims description 121
- 238000005259 measurement Methods 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 147
- 230000005855 radiation Effects 0.000 description 28
- 239000010410 layer Substances 0.000 description 18
- 238000000059 patterning Methods 0.000 description 17
- 238000007789 sealing Methods 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 13
- 239000010408 film Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 230000033001 locomotion Effects 0.000 description 10
- 238000005286 illumination Methods 0.000 description 8
- 239000004094 surface-active agent Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000002209 hydrophobic effect Effects 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 238000004381 surface treatment Methods 0.000 description 6
- 230000004075 alteration Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000002250 absorbent Substances 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- -1 polyethylene Polymers 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- 240000002853 Nelumbo nucifera Species 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 2
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000006094 Zerodur Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 229920001600 hydrophobic polymer Polymers 0.000 description 2
- 230000005661 hydrophobic surface Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 239000000344 soap Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010010071 Coma Diseases 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Engineering & Computer Science (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optics & Photonics (AREA)
Description
−放射線の投射ビームを提供するための照射系と、
−投射ビームにその断面においてパターンを付与するように働くパターン化手段を支持するための支持構造と、
−基板を保持するための基板テーブルと、
−基板の目標部分上にパターン化されたビームを投射するための投射系と、
−前記投射系の最終要素と前記基板の間の空間を浸漬液で充填するための液体供給システムとを含み、
前記浸漬液が、(i)最終要素及び/若しくは液体供給システムとの間で60°より小さい接触角を有し、かつ/或いは(ii)前記基板の表面との間で80°より小さい接触角を有することを特徴とするリソグラフィ装置が提供される。
−放射線の投射ビームを提供するための照射系と、
−投射ビームにその断面においてパターンを付与するように働くパターン化手段を支持するための支持構造と、
−基板を保持するための基板テーブルと、
−基板の目標部分上にパターン化されたビームを投射するための投射系と、
−前記基板、センサ又はシャッタ部材と前記投射系の最終要素の間の空間を少なくとも部分的に浸漬液で充填するための液体供給システムとを含み、
前記浸漬液が、前記基板、センサ、シャッタ部材及び/又は最終要素の表面との間で90°より大きい接触角を有し、その表面が、装置の光軸又は前記投射系の表面及び/又は前記基板テーブルの上表面の実質的にすべてと整合可能なことを特徴とするリソグラフィ装置が提供される。
−基板を提供するステップと、
−照明系を使用して放射線の投射ビームを提供するステップと、
−パターン化手段を使用して、投射ビームにその断面においてパターンを付与するステップと、
−投射系の最終要素と前記基板の間の空間を浸漬液で充填するステップと、
−前記投射系を使用して、基板の目標部分上に放射線の投射ビームを投射するステップとを含み、
前記浸漬液が、(i)最終要素及び/若しくは液体供給システムとの間で60°より小さい接触角を有し、かつ/或いは(ii)前記基板の表面との間で80°より小さい接触角を有ることを特徴とする装置製造方法が提供される。
−基板を提供するステップと、
−照明系を使用して、放射線の投射ビームを提供するステップと、
−パターン化手段を使用して、投射ビームにその断面においてパターンを付与するステップと、
−投射系の最終要素と前記基板、センサ又はシャッタ部材の間の空間を少なくとも部分的に浸漬液で充填するステップと、
−前記投射系を使用して、基板の目標部分上に放射線のパターン化されたビームを投射するステップとを含み、
前記浸漬液が、前記基板、センサ、シャッタ部材及び/又は最終要素の表面との間で90°より大きい接触角を有し、その表面が、装置の光軸又は前記投射系の表面及び/又は前記基板テーブルの上表面の実質的にすべてと整合可能であることを特徴とする装置製造方法が提供される。
「実施例1」
−放射線(たとえば、紫外線)の投射ビームPBを提供するための照射系(照明装置)ILと、
−アイテムPLに対してパターン化手段(たとえば、マスク)MAを正確に位置決めするための第1の位置決め手段PMに接続され、パターン化手段を支持するための第1の支持構造(たとえば、マスク・テーブル)MTと、
−アイテムPLに対して基板(たとえば、レジスト被膜ウェハ)Wを正確に位置決めするための第2の位置決め手段PWに接続され、基板を保持するための基板テーブル(たとえば、ウェハ・テーブル)WTと、
−パターン化手段MAによって投射ビームPBに付与されるパターンを、(たとえば、1個又は複数のダイを有する)基板Wの目標部分C上に結像するための投射系(たとえば、屈折投射レンズ)PLと
を含む。
1.ステップ・モードでは、投射ビームに付与されたパターン全体が一度に目標部分C上に投射される間(たとえば、単一静止状態露光)、マスク・テーブルMT及び基板テーブルWTは、基本的に静止状態に保たれる。次いで、基板テーブルWTは、X及び/又はY方向にシフトされ、したがって異なる目標部分Cの露光ができる。ステップ・モードでは、露光域の最大サイズが、単一静止状態露光中に結像される目標部分Cのサイズを限定する。
2.走査モードでは、投射ビームに付与されたパターンが、目標部分C上に投射される間(たとえば、単一動的露光)、マスク・テーブルMT及び基板テーブルWTは、同時に走査される。マスク・テーブルMTに対する基板テーブルWTの相対移動の速度及び方向は、拡大率(縮小率)及び投射系PLの影像反転特性によって決まる。走査モードでは、露光域の最大サイズが単一動的露光中の目標部分の(走査方向でない方向の)幅を限定し、走査運動の長さは目標部分の(走査方向の)高さを決める。
3.他のモードでは、マスク・テーブルMTは、プログラム可能なパターン化手段を保持しながら基本的に静止状態に保たれる。基板テーブルWTは、投射ビームに付与されたパターンが、目標部分C上に投射される間、移動又は走査される。このモードでは、一般に、パルス状の放射線源が使用され、走査中、基板テーブルWTの移動した後ごとに、又は連続する放射線パルスの間に必要に応じてプログラム可能なパターン化手段が更新される。この運用モードは、上記のプログラム可能なミラー・アレイのタイプなどのプログラム可能なパターン化手段を利用するマスクを使用しないリソグラフィに容易に適用することができる。
「実施例2」
「実施例3及び4」
「実施例5」
「表面及び浸漬液」
R=4γ/ΔP
「保護膜」
IN 積分器
CO 集光器
PB 投射ビーム
MA パターン化手段、マスク
MT 支持構造、マスク・テーブル
M1、M2 マスク位置合せマーク
PL アイテム、投射系、屈折投射レンズ
BD ビーム送出系
W 基板
C 目標部分
WT 基板テーブル
IF 位置センサ
PM、PW 位置決め手段
P1、P2 基板位置合せマーク
OUT 排出口
IN 注入口
SO 放射線源
5 浸漬液
7、9 レベル
10 シール部材
15 シール手段
18 注入口
19 抽出口
20 投射系PLの最終要素、最終要素の外側表面
22 投射系の表面
40 基板Wの上表面
50 矢印
100 第1の層
110 第2の層
200 スルー・レンズ・センサ、センサ
210 検出要素
220 吸収要素
222 透過センサ回折格子
230 レンズ、最終要素
240 被覆
300 シャッタ部材
360、370 磁石
400 ガス入口、入口
Claims (9)
- パターン化されたビームを投射する投射系と、
前記投射系の最終要素とセンサ及び/又はシャッター部材との間の空間を液体で充填する液体供給システムと、を備え、
前記液体は、前記センサ及び/又はシャッター部材との表面との間で90°より大きい接触角を有する、リソグラフィ装置。 - 前記液体供給システムは、前記液体を前記空間に閉じ込めるシール部材を備える、請求項1に記載の装置。
- 前記シャッター部材は、前記シール部材の開口を閉じる、請求項2に記載の装置。
- 前記シャッター部材は、前記シール部材から液体が漏れるのを防止するために前記シール部材の底部に配置可能である、請求項2又は請求項3のいずれかに記載の装置。
- 前記センサは、前記投射系の下に配置可能である請求項1乃至請求項4のいずれか一項に記載の装置。
- 前記センサは、前記液体を介して又は前記液体なしで測定を行う請求項1乃至請求項5のいずれか一項に記載の装置。
- 前記センサは、検出要素、透過センサ回折格子及び吸収要素を備える請求項1乃至6のいずれか一項に記載の装置。
- 前記表面は、被膜されている請求項1乃至7のいずれか一項に記載の装置。
- 前記浸漬液は、前記表面との間で、100°、110°又は120°より大きい接触角を有する請求項1乃至8のいずれか一項に記載の装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03257195.2 | 2003-11-14 | ||
EP03257195 | 2003-11-14 | ||
EP04254659 | 2004-08-03 | ||
EP04254659.8 | 2004-08-03 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008219416A Division JP4881923B2 (ja) | 2003-11-14 | 2008-08-28 | リソグラフィ装置および装置製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010183113A JP2010183113A (ja) | 2010-08-19 |
JP5200057B2 true JP5200057B2 (ja) | 2013-05-15 |
Family
ID=34702361
Family Applications (9)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004328567A Active JP4295712B2 (ja) | 2003-11-14 | 2004-11-12 | リソグラフィ装置及び装置製造方法 |
JP2008219416A Expired - Fee Related JP4881923B2 (ja) | 2003-11-14 | 2008-08-28 | リソグラフィ装置および装置製造方法 |
JP2009176829A Pending JP2009283970A (ja) | 2003-11-14 | 2009-07-29 | リソグラフィ装置および装置製造方法 |
JP2010116463A Expired - Fee Related JP5530250B2 (ja) | 2003-11-14 | 2010-05-20 | リソグラフィ装置 |
JP2010116482A Expired - Fee Related JP5200057B2 (ja) | 2003-11-14 | 2010-05-20 | リソグラフィ装置 |
JP2011152771A Expired - Fee Related JP5314735B2 (ja) | 2003-11-14 | 2011-07-11 | リソグラフィ装置 |
JP2013222157A Expired - Fee Related JP5782495B2 (ja) | 2003-11-14 | 2013-10-25 | リソグラフィ装置およびデバイス製造方法 |
JP2015031453A Expired - Fee Related JP6055501B2 (ja) | 2003-11-14 | 2015-02-20 | リソグラフィ装置およびデバイス製造方法 |
JP2016127256A Expired - Fee Related JP6302006B2 (ja) | 2003-11-14 | 2016-06-28 | リソグラフィ装置および装置製造方法 |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004328567A Active JP4295712B2 (ja) | 2003-11-14 | 2004-11-12 | リソグラフィ装置及び装置製造方法 |
JP2008219416A Expired - Fee Related JP4881923B2 (ja) | 2003-11-14 | 2008-08-28 | リソグラフィ装置および装置製造方法 |
JP2009176829A Pending JP2009283970A (ja) | 2003-11-14 | 2009-07-29 | リソグラフィ装置および装置製造方法 |
JP2010116463A Expired - Fee Related JP5530250B2 (ja) | 2003-11-14 | 2010-05-20 | リソグラフィ装置 |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011152771A Expired - Fee Related JP5314735B2 (ja) | 2003-11-14 | 2011-07-11 | リソグラフィ装置 |
JP2013222157A Expired - Fee Related JP5782495B2 (ja) | 2003-11-14 | 2013-10-25 | リソグラフィ装置およびデバイス製造方法 |
JP2015031453A Expired - Fee Related JP6055501B2 (ja) | 2003-11-14 | 2015-02-20 | リソグラフィ装置およびデバイス製造方法 |
JP2016127256A Expired - Fee Related JP6302006B2 (ja) | 2003-11-14 | 2016-06-28 | リソグラフィ装置および装置製造方法 |
Country Status (2)
Country | Link |
---|---|
US (8) | US7528929B2 (ja) |
JP (9) | JP4295712B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9642711B2 (en) | 2003-10-17 | 2017-05-09 | Smith & Nephew, Inc. | High flexion articular insert |
Families Citing this family (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101101737B1 (ko) * | 2002-12-10 | 2012-01-05 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
KR101381538B1 (ko) | 2003-02-26 | 2014-04-04 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
SG10201404132YA (en) | 2003-04-11 | 2014-09-26 | Nippon Kogaku Kk | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
EP2261742A3 (en) | 2003-06-11 | 2011-05-25 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method. |
KR20180112884A (ko) * | 2003-06-13 | 2018-10-12 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
TWI536430B (zh) | 2003-06-19 | 2016-06-01 | 尼康股份有限公司 | An exposure apparatus, an exposure method, and an element manufacturing method |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1491956B1 (en) | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005006418A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
EP1500982A1 (en) | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
KR101394764B1 (ko) * | 2003-12-03 | 2014-05-27 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법, 그리고 광학 부품 |
CN1890779B (zh) * | 2003-12-03 | 2011-06-08 | 株式会社尼康 | 曝光装置、曝光方法和器件制造方法 |
JPWO2005057635A1 (ja) * | 2003-12-15 | 2007-07-05 | 株式会社ニコン | 投影露光装置及びステージ装置、並びに露光方法 |
KR101941351B1 (ko) | 2003-12-15 | 2019-01-22 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
US20070081133A1 (en) * | 2004-12-14 | 2007-04-12 | Niikon Corporation | Projection exposure apparatus and stage unit, and exposure method |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4622340B2 (ja) * | 2004-03-04 | 2011-02-02 | 株式会社ニコン | 露光装置、デバイス製造方法 |
EP1753016B1 (en) * | 2004-04-19 | 2012-06-20 | Nikon Corporation | Exposure apparatus and device producing method |
JP4517341B2 (ja) * | 2004-06-04 | 2010-08-04 | 株式会社ニコン | 露光装置、ノズル部材、及びデバイス製造方法 |
WO2005124835A1 (ja) * | 2004-06-21 | 2005-12-29 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US7385670B2 (en) * | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
US7158896B1 (en) * | 2004-11-01 | 2007-01-02 | Advanced Micro Devices, Inc. | Real time immersion medium control using scatterometry |
US7119035B2 (en) * | 2004-11-22 | 2006-10-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method using specific contact angle for immersion lithography |
US7289193B1 (en) * | 2004-12-01 | 2007-10-30 | Advanced Micro Devices, Inc. | Frame structure for turbulence control in immersion lithography |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4551758B2 (ja) * | 2004-12-27 | 2010-09-29 | 株式会社東芝 | 液浸露光方法および半導体装置の製造方法 |
JP4488890B2 (ja) * | 2004-12-27 | 2010-06-23 | 株式会社東芝 | レジストパターン形成方法及び半導体装置の製造方法 |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
EP2506289A3 (en) | 2005-01-31 | 2013-05-22 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
JP2006270057A (ja) * | 2005-02-28 | 2006-10-05 | Canon Inc | 露光装置 |
US7324185B2 (en) * | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20070132976A1 (en) * | 2005-03-31 | 2007-06-14 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
TW200644079A (en) * | 2005-03-31 | 2006-12-16 | Nikon Corp | Exposure apparatus, exposure method, and device production method |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
EP1720072B1 (en) | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR100640643B1 (ko) * | 2005-06-04 | 2006-10-31 | 삼성전자주식회사 | 포토레지스트용 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법 |
US7435528B2 (en) * | 2005-06-09 | 2008-10-14 | E.I. Du Pont De Nemours And Company | Processes and devices using polycyclic fluoroalkanes in vacuum and deep ultraviolet applications |
US20070004182A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and system for inhibiting immersion lithography defect formation |
JP2007012954A (ja) * | 2005-07-01 | 2007-01-18 | Canon Inc | 露光装置 |
SG170060A1 (en) * | 2005-09-09 | 2011-04-29 | Nikon Corp | Exposure apparatus, exposure method, and device production method |
US7411658B2 (en) * | 2005-10-06 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7633073B2 (en) * | 2005-11-23 | 2009-12-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7773195B2 (en) * | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
JP2007194503A (ja) | 2006-01-20 | 2007-08-02 | Toshiba Corp | 基板処理方法および基板処理装置 |
TWI383996B (zh) * | 2006-01-31 | 2013-02-01 | Shinetsu Chemical Co | 高分子化合物、光阻保護膜材料及圖型之形成方法 |
US8027019B2 (en) | 2006-03-28 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2535744A3 (en) * | 2006-04-03 | 2013-10-09 | Nikon Corporation | Incidence surfaces and optical windows that are solvophobic to immersion liquids used in an immersion microlithography system |
US7903232B2 (en) * | 2006-04-12 | 2011-03-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7701551B2 (en) * | 2006-04-14 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
JP2007335476A (ja) * | 2006-06-12 | 2007-12-27 | Canon Inc | 露光装置及びデバイス製造方法 |
JP2007335662A (ja) | 2006-06-15 | 2007-12-27 | Canon Inc | 露光装置 |
US7656502B2 (en) * | 2006-06-22 | 2010-02-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8435719B2 (en) * | 2006-08-08 | 2013-05-07 | International Business Machines Corporation | Tunable contact angle process for immersionlithography topcoats and photoresists |
WO2008029884A1 (fr) * | 2006-09-08 | 2008-03-13 | Nikon Corporation | Dispositif et procédé de nettoyage, et procédé de fabrication du dispositif |
WO2008031576A1 (en) * | 2006-09-12 | 2008-03-20 | Carl Zeiss Smt Ag | Optical arrangement for immersion lithography with a hydrophobic coating and projection exposure apparatus comprising the same |
KR101186689B1 (ko) * | 2006-10-30 | 2012-09-27 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. | 침지 리소그래피 처리용 조성물 및 방법 |
US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
US8654305B2 (en) | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
US20080198346A1 (en) * | 2007-02-16 | 2008-08-21 | Canon Kabushiki Kaisha | Exposure apparatus and method for manufacturing device |
JP5055549B2 (ja) * | 2007-03-22 | 2012-10-24 | 国立大学法人宇都宮大学 | 液浸露光装置 |
US8011377B2 (en) | 2007-05-04 | 2011-09-06 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
US7866330B2 (en) | 2007-05-04 | 2011-01-11 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US9013672B2 (en) * | 2007-05-04 | 2015-04-21 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US8947629B2 (en) * | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US8264662B2 (en) * | 2007-06-18 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-line particle detection for immersion lithography |
US7916269B2 (en) | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
US9019466B2 (en) * | 2007-07-24 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
NL1035757A1 (nl) * | 2007-08-02 | 2009-02-03 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL1035942A1 (nl) * | 2007-09-27 | 2009-03-30 | Asml Netherlands Bv | Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus. |
SG151198A1 (en) * | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
JP5017232B2 (ja) * | 2007-10-31 | 2012-09-05 | エーエスエムエル ネザーランズ ビー.ブイ. | クリーニング装置および液浸リソグラフィ装置 |
JP2009199058A (ja) * | 2007-11-05 | 2009-09-03 | Rohm & Haas Electronic Materials Llc | 液浸リソグラフィーのための組成物および方法 |
NL1036273A1 (nl) * | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus. |
NL1036306A1 (nl) | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
US8339572B2 (en) | 2008-01-25 | 2012-12-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8889042B2 (en) * | 2008-02-14 | 2014-11-18 | Asml Netherlands B.V. | Coatings |
EP2128703A1 (en) | 2008-05-28 | 2009-12-02 | ASML Netherlands BV | Lithographic Apparatus and a Method of Operating the Apparatus |
JP2010118455A (ja) * | 2008-11-12 | 2010-05-27 | Canon Inc | 液浸露光装置に用いられる部材、液浸露光装置及びデバイス製造方法 |
US20100328637A1 (en) * | 2008-12-04 | 2010-12-30 | Nikon Corporation | Exposure apparatus, exposing method and device fabricating method |
JP2010147471A (ja) * | 2008-12-18 | 2010-07-01 | Asml Netherlands Bv | リソグラフィ装置及び少なくとも2つのターゲット部分を照射する方法 |
US20100251914A1 (en) * | 2009-04-01 | 2010-10-07 | Xerox Corporation | Imaging member |
JP2010251745A (ja) | 2009-04-10 | 2010-11-04 | Asml Netherlands Bv | 液浸リソグラフィ装置及びデバイス製造方法 |
NL2004540A (en) * | 2009-05-14 | 2010-11-18 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
JP5507392B2 (ja) * | 2009-09-11 | 2014-05-28 | エーエスエムエル ネザーランズ ビー.ブイ. | シャッター部材、リソグラフィ装置及びデバイス製造方法 |
AU2010343143A1 (en) * | 2009-12-28 | 2012-06-28 | Pioneer Hi-Bred International, Inc. | Sorghum fertility restorer genotypes and methods of marker-assisted selection |
NL2006054A (en) | 2010-02-09 | 2011-08-10 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
US9228785B2 (en) | 2010-05-04 | 2016-01-05 | Alexander Poltorak | Fractal heat transfer device |
WO2015189875A1 (ja) * | 2014-06-12 | 2015-12-17 | 富士電機株式会社 | 不純物添加装置、不純物添加方法及び半導体素子の製造方法 |
CN104570618B (zh) * | 2014-12-25 | 2016-08-17 | 浙江大学 | 基于亲疏水交替表面的浸没流场密封装置 |
CN104597720B (zh) * | 2015-01-15 | 2016-08-17 | 浙江大学 | 一种用于浸没式光刻机的气液隔离装置 |
KR102432661B1 (ko) | 2015-07-07 | 2022-08-17 | 삼성전자주식회사 | 극자외선용 포토레지스트 조성물 및 이를 이용하는 포토레지스트 패턴의 형성 방법 |
NL2017128A (en) * | 2015-07-16 | 2017-01-23 | Asml Netherlands Bv | A lithographic apparatus, a projection system, a last lens element, a liquid control member and a device manufacturing method |
CN105045046B (zh) * | 2015-08-03 | 2017-03-29 | 浙江大学 | 一种用于浸没式光刻机的气密封及水平和垂直注液回收装置 |
EP3168866B1 (en) * | 2015-11-16 | 2020-12-30 | ams AG | Semiconductor humidity sensor device and manufacturing method thereof |
DE102016203442A1 (de) * | 2016-03-02 | 2017-09-07 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage und Verfahren zum Vermessen eines Projektionsobjektives |
EP3485215B1 (en) | 2016-07-12 | 2023-06-07 | Alexander Poltorak | System and method for maintaining efficiency of a heat sink |
EP3956728A1 (en) | 2019-04-16 | 2022-02-23 | ASML Netherlands B.V. | Image sensor for immersion lithography |
US11544951B2 (en) | 2019-07-31 | 2023-01-03 | Robotic Research Opco, Llc | Autonomous delivery vehicle |
US11275312B1 (en) | 2020-11-30 | 2022-03-15 | Waymo Llc | Systems and methods for verifying photomask cleanliness |
Family Cites Families (285)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE224448C (ja) | ||||
DE242880C (ja) | ||||
DE221563C (ja) | ||||
DE206607C (ja) | ||||
US3243321A (en) * | 1962-11-02 | 1966-03-29 | Atlas Copco Ab | Method of teflon coating of metals |
GB1242527A (en) | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US3573975A (en) | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
ATE1462T1 (de) | 1979-07-27 | 1982-08-15 | Werner W. Dr. Tabarelli | Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe. |
FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
JPS5754317A (en) | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4390273A (en) | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
US4405701A (en) | 1981-07-29 | 1983-09-20 | Western Electric Co. | Methods of fabricating a photomask |
NL8201396A (nl) | 1982-04-01 | 1983-11-01 | Dow Chemical Nederland | Zilver katalysator en een werkwijze voor de bereiding daarvan. |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
EP0101266A3 (en) | 1982-08-09 | 1985-04-03 | Milliken Research Corporation | Printing method and apparatus |
DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
EP0206607A3 (en) | 1985-06-18 | 1987-09-02 | Comlinear Corporation | Wideband feedback amplifier |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS6265326U (ja) | 1985-10-16 | 1987-04-23 | ||
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
JPS62121417U (ja) | 1986-01-24 | 1987-08-01 | ||
FR2595471B1 (fr) | 1986-03-06 | 1988-06-10 | Production Rech Appliquees | Dispositif d'ellipsometrie spectroscopique a fibres optiques |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JPS63157419U (ja) | 1987-03-31 | 1988-10-14 | ||
US5040020A (en) | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
US5121256A (en) | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
JPH04305915A (ja) * | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305917A (ja) * | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JP3203698B2 (ja) | 1991-09-02 | 2001-08-27 | 株式会社ニコン | 顕微鏡の液浸対物レンズ及び防水キャップ |
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
KR940013872A (ko) * | 1992-12-05 | 1994-07-16 | 와따나베 히로시 | 리사이클 oa 시트 |
JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
DE4344908A1 (de) | 1993-01-08 | 1994-07-14 | Nikon Corp | Kondensorlinsensystem |
JPH06208058A (ja) | 1993-01-13 | 1994-07-26 | Olympus Optical Co Ltd | 顕微鏡対物レンズ |
JP3747951B2 (ja) | 1994-11-07 | 2006-02-22 | 株式会社ニコン | 反射屈折光学系 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
ATE174837T1 (de) | 1994-07-29 | 1999-01-15 | Wilhelm Barthlott | Selbstreinigende oberflächen von gegenständen sowie verfahren zur herstellung derselben |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
WO1998009278A1 (en) | 1996-08-26 | 1998-03-05 | Digital Papyrus Technologies | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
US5900354A (en) | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
EP1039511A4 (en) | 1997-12-12 | 2005-03-02 | Nikon Corp | PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS |
JP3650257B2 (ja) | 1997-12-19 | 2005-05-18 | 東京瓦斯株式会社 | 加熱調理器 |
JPH11195576A (ja) | 1997-12-26 | 1999-07-21 | Canon Inc | 露光装置 |
JP3629361B2 (ja) | 1998-02-17 | 2005-03-16 | エスアイアイ・ナノテクノロジー株式会社 | 試料ステージ |
JPH11239758A (ja) * | 1998-02-26 | 1999-09-07 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
US6068539A (en) | 1998-03-10 | 2000-05-30 | Lam Research Corporation | Wafer polishing device with movable window |
WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP4505989B2 (ja) * | 1998-05-19 | 2010-07-21 | 株式会社ニコン | 収差測定装置並びに測定方法及び該装置を備える投影露光装置並びに該方法を用いるデバイス製造方法、露光方法 |
US6395130B1 (en) | 1998-06-08 | 2002-05-28 | Speedfam-Ipec Corporation | Hydrophobic optical endpoint light pipes for chemical mechanical polishing |
JP2000012453A (ja) | 1998-06-18 | 2000-01-14 | Nikon Corp | 露光装置及びその使用方法、露光方法、並びにマスクの製造方法 |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
JP2000141699A (ja) | 1998-11-13 | 2000-05-23 | Canon Inc | 画像形成方法およびその装置ならびにプリントヘッド |
US6635311B1 (en) | 1999-01-07 | 2003-10-21 | Northwestern University | Methods utilizing scanning probe microscope tips and products therefor or products thereby |
JP2000240717A (ja) * | 1999-02-19 | 2000-09-05 | Canon Inc | 能動的除振装置 |
DE19914007A1 (de) | 1999-03-29 | 2000-10-05 | Creavis Tech & Innovation Gmbh | Strukturierte flüssigkeitsabweisende Oberflächen mit ortsdefinierten flüssigkeitsbenetzenden Teilbereichen |
TWI242111B (en) | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
US6495202B1 (en) | 1999-09-08 | 2002-12-17 | Nikon Corporation | Method for manufacturing an optical element containing fluoride in at least its surface portions |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
WO2001027978A1 (fr) | 1999-10-07 | 2001-04-19 | Nikon Corporation | Substrat, dispositif a etage, procede d'attaque d'etage, systeme d'exposition et procede d'exposition |
JP3836644B2 (ja) | 1999-10-29 | 2006-10-25 | 信越化学工業株式会社 | フォトレジスト組成物 |
DE19957928C2 (de) | 1999-12-01 | 2002-09-26 | Helmut Hummel | Verfahren zur lokalen Hydrophobierung von hydrophilen Oberflächen |
US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
JP2001272503A (ja) * | 2000-03-24 | 2001-10-05 | Fuji Photo Film Co Ltd | 親水化ハードコートフィルム及び透明積層フィルム |
JP2002033271A (ja) * | 2000-05-12 | 2002-01-31 | Nikon Corp | 投影露光方法、それを用いたデバイス製造方法、及び投影露光装置 |
US7234477B2 (en) * | 2000-06-30 | 2007-06-26 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
TW591653B (en) | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
JP2003016092A (ja) | 2001-04-26 | 2003-01-17 | Hitachi Ltd | 類似文書検索方法及びその実施システム並びにその処理プログラム |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
JP3626921B2 (ja) * | 2001-06-29 | 2005-03-09 | 株式会社クリスタルシステム | レンズ用無機親水性硬質層形成材料、レンズ用無機親水性硬質層形成方法 |
JP2003015092A (ja) * | 2001-06-29 | 2003-01-15 | Crystal System:Kk | メガネレンズ |
US6600547B2 (en) | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
US20030087292A1 (en) * | 2001-10-04 | 2003-05-08 | Shiping Chen | Methods and systems for promoting interactions between probes and target molecules in fluid in microarrays |
US6897941B2 (en) | 2001-11-07 | 2005-05-24 | Applied Materials, Inc. | Optical spot grid array printer |
JP2003161806A (ja) | 2001-11-27 | 2003-06-06 | Nikon Corp | 光学素子および光学機器 |
WO2004063959A1 (en) | 2001-12-06 | 2004-07-29 | Coudert Brothers Llp | Shareholder protection plan |
JP4075379B2 (ja) | 2002-01-08 | 2008-04-16 | 株式会社デンソー | フッ素樹脂の表面処理方法およびフッ素樹脂を用いたプリント配線基板の製造方法 |
DE10202513B4 (de) | 2002-01-23 | 2006-03-30 | Infineon Technologies Ag | Selbstreinigende Oberflächen für bildgebende Sensoren |
KR20040086313A (ko) * | 2002-01-29 | 2004-10-08 | 가부시키가이샤 니콘 | 노광장치 및 노광방법 |
FR2836238B1 (fr) | 2002-02-19 | 2004-04-02 | Kis | Procede pour transferer une image numerique en vue de sa restitution visuelle, et dispositif pour la mise en oeuvre de ce procede |
US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
JP4117530B2 (ja) * | 2002-04-04 | 2008-07-16 | セイコーエプソン株式会社 | 液量判定装置、露光装置、および液量判定方法 |
JP2005533657A (ja) | 2002-07-24 | 2005-11-10 | ファイザー・プロダクツ・インク | 薬剤用のレーザー穴あけ装置 |
JP2005536775A (ja) | 2002-08-23 | 2005-12-02 | 株式会社ニコン | 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法 |
US7367345B1 (en) * | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US7240679B2 (en) * | 2002-09-30 | 2007-07-10 | Lam Research Corporation | System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold |
US7252097B2 (en) | 2002-09-30 | 2007-08-07 | Lam Research Corporation | System and method for integrating in-situ metrology within a wafer process |
US7069937B2 (en) * | 2002-09-30 | 2006-07-04 | Lam Research Corporation | Vertical proximity processor |
US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
EP1429188B1 (en) | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN101470360B (zh) | 2002-11-12 | 2013-07-24 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
CN100568101C (zh) | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
US20040263969A1 (en) | 2002-11-25 | 2004-12-30 | Lenny Lipton | Lenticular antireflection display |
DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
CN1723541B (zh) | 2002-12-10 | 2010-06-02 | 株式会社尼康 | 曝光装置和器件制造方法 |
KR101101737B1 (ko) | 2002-12-10 | 2012-01-05 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
EP1429190B1 (en) | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
WO2004053950A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US7242455B2 (en) * | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
SG171468A1 (en) | 2002-12-10 | 2011-06-29 | Nikon Corp | Exposure apparatus and method for producing device |
WO2004053955A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US7948604B2 (en) * | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
CN1717776A (zh) | 2002-12-10 | 2006-01-04 | 株式会社尼康 | 光学元件及使用该光学元件的投影曝光装置 |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
WO2004053951A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光方法及び露光装置並びにデバイス製造方法 |
AU2003289272A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
KR101157002B1 (ko) | 2002-12-10 | 2012-06-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
JP4595320B2 (ja) | 2002-12-10 | 2010-12-08 | 株式会社ニコン | 露光装置、及びデバイス製造方法 |
JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
DE60326384D1 (de) | 2002-12-13 | 2009-04-09 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
EP1584089B1 (en) | 2002-12-19 | 2006-08-02 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
CN1316482C (zh) | 2002-12-19 | 2007-05-16 | 皇家飞利浦电子股份有限公司 | 照射层上斑点的方法和装置 |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
US7088458B1 (en) * | 2002-12-23 | 2006-08-08 | Carl Zeiss Smt Ag | Apparatus and method for measuring an optical imaging system, and detector unit |
US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US7130037B1 (en) * | 2003-01-09 | 2006-10-31 | Kla-Tencor Technologies Corp. | Systems for inspecting wafers and reticles with increased resolution |
US7027231B2 (en) | 2003-02-14 | 2006-04-11 | Fujinon Corporation | Endoscope objective lens |
TW200424767A (en) * | 2003-02-20 | 2004-11-16 | Tokyo Ohka Kogyo Co Ltd | Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method |
US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
JP4352930B2 (ja) | 2003-02-26 | 2009-10-28 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
KR101381538B1 (ko) | 2003-02-26 | 2014-04-04 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
EP1610361B1 (en) | 2003-03-25 | 2014-05-21 | Nikon Corporation | Exposure system and device production method |
TWI244117B (en) | 2003-03-26 | 2005-11-21 | Komatsu Denshi Kinzoku Kk | Semiconductor epitaxy wafer |
JP4902201B2 (ja) * | 2003-04-07 | 2012-03-21 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
WO2004093159A2 (en) | 2003-04-09 | 2004-10-28 | Nikon Corporation | Immersion lithography fluid control system |
KR101364928B1 (ko) * | 2003-04-10 | 2014-02-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
WO2004093160A2 (en) | 2003-04-10 | 2004-10-28 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
KR101238142B1 (ko) | 2003-04-10 | 2013-02-28 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
SG10201404132YA (en) | 2003-04-11 | 2014-09-26 | Nippon Kogaku Kk | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
KR101597475B1 (ko) | 2003-04-11 | 2016-02-24 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
US6938774B2 (en) | 2003-04-15 | 2005-09-06 | Entegris, Inc. | Tray carrier with ultraphobic surfaces |
KR20050122269A (ko) | 2003-04-17 | 2005-12-28 | 가부시키가이샤 니콘 | 액침 리소그래피를 이용하기 위한 오토포커스 소자의광학적 배열 |
JP4871726B2 (ja) | 2003-04-28 | 2012-02-08 | ナノシス・インク. | 超疎液性表面、その作製法及び用途 |
TWI237307B (en) | 2003-05-01 | 2005-08-01 | Nikon Corp | Optical projection system, light exposing apparatus and light exposing method |
EP2722702A3 (en) | 2003-05-06 | 2014-07-23 | Nikon Corporation | Projection optical system, and exposure apparatus and exposure method |
JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1624481A4 (en) | 2003-05-15 | 2008-01-30 | Nikon Corp | EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS |
EP1479738A1 (en) | 2003-05-20 | 2004-11-24 | DSM IP Assets B.V. | Hydrophobic coatings comprising reactive nano-particles |
TW200509205A (en) | 2003-05-23 | 2005-03-01 | Nippon Kogaku Kk | Exposure method and device-manufacturing method |
TWI282487B (en) | 2003-05-23 | 2007-06-11 | Canon Kk | Projection optical system, exposure apparatus, and device manufacturing method |
JP2005277363A (ja) * | 2003-05-23 | 2005-10-06 | Nikon Corp | 露光装置及びデバイス製造方法 |
TW201515064A (zh) | 2003-05-23 | 2015-04-16 | 尼康股份有限公司 | 曝光方法及曝光裝置以及元件製造方法 |
JP2004356205A (ja) | 2003-05-27 | 2004-12-16 | Tadahiro Omi | スキャン型露光装置および露光方法 |
EP1628330A4 (en) | 2003-05-28 | 2009-09-16 | Nikon Corp | EXPOSURE METHOD, EXPOSURE DEVICE, AND DEVICE MANUFACTURING METHOD |
US7274472B2 (en) | 2003-05-28 | 2007-09-25 | Timbre Technologies, Inc. | Resolution enhanced optical metrology |
TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP2261742A3 (en) | 2003-06-11 | 2011-05-25 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method. |
JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
KR20180112884A (ko) | 2003-06-13 | 2018-10-12 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
TWI536430B (zh) | 2003-06-19 | 2016-06-01 | 尼康股份有限公司 | An exposure apparatus, an exposure method, and an element manufacturing method |
JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4343597B2 (ja) | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP2005019616A (ja) | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
EP1491956B1 (en) * | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1498778A1 (en) | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP1494074A1 (en) * | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20040263959A1 (en) * | 2003-06-30 | 2004-12-30 | Dixon Arthur E. | Scanning beam optical imaging system for macroscopic imaging of an object |
EP1494075B1 (en) * | 2003-06-30 | 2008-06-25 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7236232B2 (en) | 2003-07-01 | 2007-06-26 | Nikon Corporation | Using isotopically specified fluids as optical elements |
EP2466383B1 (en) * | 2003-07-08 | 2014-11-19 | Nikon Corporation | Wafer table for immersion lithography |
CN102854755A (zh) | 2003-07-09 | 2013-01-02 | 株式会社尼康 | 曝光装置 |
EP2264531B1 (en) | 2003-07-09 | 2013-01-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
SG109000A1 (en) | 2003-07-16 | 2005-02-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
JP2006528835A (ja) | 2003-07-24 | 2006-12-21 | カール・ツアイス・エスエムテイ・アーゲー | マイクロリソグラフィ投影露光装置および浸漬液体を浸漬空間へ導入する方法 |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
TWI245163B (en) * | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR101419192B1 (ko) | 2003-08-29 | 2014-07-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
TWI263859B (en) * | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
JP4288426B2 (ja) | 2003-09-03 | 2009-07-01 | 株式会社ニコン | 液浸リソグラフィのための流体の供給装置及び方法 |
JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3870182B2 (ja) | 2003-09-09 | 2007-01-17 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
TWI497565B (zh) * | 2003-09-29 | 2015-08-21 | 尼康股份有限公司 | An exposure apparatus and an exposure method, and an element manufacturing method |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
EP1672682A4 (en) | 2003-10-08 | 2008-10-15 | Zao Nikon Co Ltd | SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD |
TW201738932A (zh) | 2003-10-09 | 2017-11-01 | Nippon Kogaku Kk | 曝光裝置及曝光方法、元件製造方法 |
JP4524601B2 (ja) | 2003-10-09 | 2010-08-18 | 株式会社ニコン | 露光装置及び露光方法、デバイス製造方法 |
US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
JP2005159322A (ja) | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
EP3392713A1 (en) | 2003-10-31 | 2018-10-24 | Nikon Corporation | Immersion exposure apparatus and method |
US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
JP4295712B2 (ja) * | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4747263B2 (ja) | 2003-11-24 | 2011-08-17 | カール・ツァイス・エスエムティー・ゲーエムベーハー | オブジェクティブにおける光学素子のための保持装置 |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
JP2005175016A (ja) | 2003-12-08 | 2005-06-30 | Canon Inc | 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法 |
JP2005175034A (ja) | 2003-12-09 | 2005-06-30 | Canon Inc | 露光装置 |
EP1700163A1 (en) | 2003-12-15 | 2006-09-13 | Carl Zeiss SMT AG | Objective as a microlithography projection objective with at least one liquid lens |
WO2005059617A2 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Projection objective having a high aperture and a planar end surface |
KR101941351B1 (ko) | 2003-12-15 | 2019-01-22 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
JP4323946B2 (ja) | 2003-12-19 | 2009-09-02 | キヤノン株式会社 | 露光装置 |
WO2005059645A2 (en) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal elements |
US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
US20050185269A1 (en) | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005191393A (ja) | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
JP2005191381A (ja) | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
US20050147920A1 (en) | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
KR101636632B1 (ko) | 2004-01-05 | 2016-07-05 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
JP4371822B2 (ja) | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
JP5420821B2 (ja) | 2004-01-14 | 2014-02-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 反射屈折投影対物レンズ |
KR101230757B1 (ko) | 2004-01-16 | 2013-02-06 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
CN1938646B (zh) | 2004-01-20 | 2010-12-15 | 卡尔蔡司Smt股份公司 | 曝光装置和用于投影透镜的测量装置 |
US7026259B2 (en) | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
US7990516B2 (en) | 2004-02-03 | 2011-08-02 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method with liquid detection apparatus |
US8852850B2 (en) | 2004-02-03 | 2014-10-07 | Rochester Institute Of Technology | Method of photolithography using a fluid and a system thereof |
JP4018647B2 (ja) | 2004-02-09 | 2007-12-05 | キヤノン株式会社 | 投影露光装置およびデバイス製造方法 |
EP1716454A1 (en) | 2004-02-09 | 2006-11-02 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101727021A (zh) | 2004-02-13 | 2010-06-09 | 卡尔蔡司Smt股份公司 | 微平版印刷投影曝光装置的投影物镜 |
EP1721201A1 (en) | 2004-02-18 | 2006-11-15 | Corning Incorporated | Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light |
CA2597872C (en) | 2004-02-25 | 2015-08-11 | Accenture Global Services Gmbh | Rfid protected media system and method that provides dynamic downloadable media |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
JP2005286068A (ja) | 2004-03-29 | 2005-10-13 | Canon Inc | 露光装置及び方法 |
JP4510494B2 (ja) | 2004-03-29 | 2010-07-21 | キヤノン株式会社 | 露光装置 |
US20050231695A1 (en) | 2004-04-15 | 2005-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for immersion lithography using high PH immersion fluid |
JP4845880B2 (ja) * | 2004-06-04 | 2011-12-28 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 光学結像系の像品質測定システム |
JP5125505B2 (ja) * | 2005-04-25 | 2013-01-23 | 株式会社ニコン | 露光方法及び露光装置、並びにデバイス製造方法 |
JP2006339448A (ja) * | 2005-06-02 | 2006-12-14 | Canon Inc | 受光ユニットを有する露光装置 |
US7924416B2 (en) * | 2005-06-22 | 2011-04-12 | Nikon Corporation | Measurement apparatus, exposure apparatus, and device manufacturing method |
EP2535744A3 (en) * | 2006-04-03 | 2013-10-09 | Nikon Corporation | Incidence surfaces and optical windows that are solvophobic to immersion liquids used in an immersion microlithography system |
JP2007335662A (ja) * | 2006-06-15 | 2007-12-27 | Canon Inc | 露光装置 |
-
2004
- 2004-11-12 JP JP2004328567A patent/JP4295712B2/ja active Active
- 2004-11-12 US US10/986,178 patent/US7528929B2/en not_active Expired - Fee Related
-
2008
- 2008-08-28 JP JP2008219416A patent/JP4881923B2/ja not_active Expired - Fee Related
-
2009
- 2009-03-26 US US12/411,952 patent/US8547519B2/en not_active Expired - Fee Related
- 2009-07-29 JP JP2009176829A patent/JP2009283970A/ja active Pending
-
2010
- 2010-05-20 JP JP2010116463A patent/JP5530250B2/ja not_active Expired - Fee Related
- 2010-05-20 JP JP2010116482A patent/JP5200057B2/ja not_active Expired - Fee Related
-
2011
- 2011-07-11 JP JP2011152771A patent/JP5314735B2/ja not_active Expired - Fee Related
- 2011-07-20 US US13/186,991 patent/US8634056B2/en active Active
-
2013
- 2013-10-25 JP JP2013222157A patent/JP5782495B2/ja not_active Expired - Fee Related
- 2013-12-16 US US14/107,734 patent/US9134622B2/en not_active Expired - Fee Related
-
2014
- 2014-04-30 US US14/266,591 patent/US9134623B2/en not_active Expired - Fee Related
-
2015
- 2015-02-20 JP JP2015031453A patent/JP6055501B2/ja not_active Expired - Fee Related
- 2015-08-28 US US14/839,633 patent/US9952515B2/en not_active Expired - Fee Related
-
2016
- 2016-06-28 JP JP2016127256A patent/JP6302006B2/ja not_active Expired - Fee Related
-
2018
- 2018-03-12 US US15/918,575 patent/US10345712B2/en not_active Expired - Fee Related
-
2019
- 2019-07-02 US US16/460,159 patent/US20190324374A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9642711B2 (en) | 2003-10-17 | 2017-05-09 | Smith & Nephew, Inc. | High flexion articular insert |
Also Published As
Publication number | Publication date |
---|---|
JP2014017526A (ja) | 2014-01-30 |
US20190324374A1 (en) | 2019-10-24 |
US20160004171A1 (en) | 2016-01-07 |
JP4881923B2 (ja) | 2012-02-22 |
US20140233004A1 (en) | 2014-08-21 |
US20110273677A1 (en) | 2011-11-10 |
JP5530250B2 (ja) | 2014-06-25 |
US9134622B2 (en) | 2015-09-15 |
JP5782495B2 (ja) | 2015-09-24 |
US8634056B2 (en) | 2014-01-21 |
US20140098357A1 (en) | 2014-04-10 |
US20180203364A1 (en) | 2018-07-19 |
US9134623B2 (en) | 2015-09-15 |
JP2008288619A (ja) | 2008-11-27 |
JP2005150734A (ja) | 2005-06-09 |
US9952515B2 (en) | 2018-04-24 |
US10345712B2 (en) | 2019-07-09 |
US20090207397A1 (en) | 2009-08-20 |
JP5314735B2 (ja) | 2013-10-16 |
JP6055501B2 (ja) | 2016-12-27 |
JP2011216904A (ja) | 2011-10-27 |
JP2010183113A (ja) | 2010-08-19 |
JP2016177322A (ja) | 2016-10-06 |
JP4295712B2 (ja) | 2009-07-15 |
JP2009283970A (ja) | 2009-12-03 |
US8547519B2 (en) | 2013-10-01 |
JP6302006B2 (ja) | 2018-03-28 |
US20050175776A1 (en) | 2005-08-11 |
US7528929B2 (en) | 2009-05-05 |
JP2010183112A (ja) | 2010-08-19 |
JP2015130519A (ja) | 2015-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6302006B2 (ja) | リソグラフィ装置および装置製造方法 | |
JP2008288619A5 (ja) | ||
JP5161293B2 (ja) | 露光装置及びデバイス製造方法 | |
JP4954139B2 (ja) | リソグラフィ装置及びデバイス製造方法 | |
JP2009152625A (ja) | リソグラフィ装置及びデバイス製造方法 | |
JP2010147471A (ja) | リソグラフィ装置及び少なくとも2つのターゲット部分を照射する方法 | |
TWI420250B (zh) | 微影裝置和方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100525 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100525 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120717 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120810 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130205 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130208 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160215 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5200057 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |