JP2010123936A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP2010123936A
JP2010123936A JP2009243735A JP2009243735A JP2010123936A JP 2010123936 A JP2010123936 A JP 2010123936A JP 2009243735 A JP2009243735 A JP 2009243735A JP 2009243735 A JP2009243735 A JP 2009243735A JP 2010123936 A JP2010123936 A JP 2010123936A
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layer
oxide semiconductor
thin film
mask
film
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Japanese (ja)
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JP2010123936A5 (enExample
Inventor
Hideomi Suzawa
英臣 須沢
Shinya Sasagawa
慎也 笹川
Taiga Muraoka
大河 村岡
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009243735A priority Critical patent/JP2010123936A/ja
Publication of JP2010123936A publication Critical patent/JP2010123936A/ja
Publication of JP2010123936A5 publication Critical patent/JP2010123936A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Drying Of Semiconductors (AREA)
JP2009243735A 2008-10-24 2009-10-22 半導体装置の作製方法 Withdrawn JP2010123936A (ja)

Priority Applications (1)

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JP2009243735A JP2010123936A (ja) 2008-10-24 2009-10-22 半導体装置の作製方法

Applications Claiming Priority (2)

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JP2008274515 2008-10-24
JP2009243735A JP2010123936A (ja) 2008-10-24 2009-10-22 半導体装置の作製方法

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JP2010123936A5 JP2010123936A5 (enExample) 2012-12-06

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JP2009243735A Withdrawn JP2010123936A (ja) 2008-10-24 2009-10-22 半導体装置の作製方法
JP2015003008A Withdrawn JP2015111699A (ja) 2008-10-24 2015-01-09 半導体装置の作製方法
JP2016042101A Active JP6043451B2 (ja) 2008-10-24 2016-03-04 半導体装置の作製方法
JP2016042207A Withdrawn JP2016146494A (ja) 2008-10-24 2016-03-04 半導体装置
JP2017011109A Expired - Fee Related JP6366754B2 (ja) 2008-10-24 2017-01-25 半導体装置の作製方法
JP2018126658A Withdrawn JP2018160694A (ja) 2008-10-24 2018-07-03 半導体装置の作製方法
JP2020146589A Active JP7084969B2 (ja) 2008-10-24 2020-09-01 表示装置
JP2022090714A Active JP7520914B2 (ja) 2008-10-24 2022-06-03 表示装置
JP2024111233A Active JP7746473B2 (ja) 2008-10-24 2024-07-10 表示装置

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JP2015003008A Withdrawn JP2015111699A (ja) 2008-10-24 2015-01-09 半導体装置の作製方法
JP2016042101A Active JP6043451B2 (ja) 2008-10-24 2016-03-04 半導体装置の作製方法
JP2016042207A Withdrawn JP2016146494A (ja) 2008-10-24 2016-03-04 半導体装置
JP2017011109A Expired - Fee Related JP6366754B2 (ja) 2008-10-24 2017-01-25 半導体装置の作製方法
JP2018126658A Withdrawn JP2018160694A (ja) 2008-10-24 2018-07-03 半導体装置の作製方法
JP2020146589A Active JP7084969B2 (ja) 2008-10-24 2020-09-01 表示装置
JP2022090714A Active JP7520914B2 (ja) 2008-10-24 2022-06-03 表示装置
JP2024111233A Active JP7746473B2 (ja) 2008-10-24 2024-07-10 表示装置

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US (2) US8236635B2 (enExample)
EP (1) EP2180518B1 (enExample)
JP (9) JP2010123936A (enExample)
KR (8) KR20100045926A (enExample)
CN (2) CN101728276B (enExample)
TW (1) TWI596777B (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012064923A (ja) * 2010-07-02 2012-03-29 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2013110397A (ja) * 2011-10-24 2013-06-06 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2014199921A (ja) * 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2015111699A (ja) * 2008-10-24 2015-06-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9466728B2 (en) 2011-12-01 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2016208048A (ja) * 2011-01-12 2016-12-08 株式会社半導体エネルギー研究所 半導体装置
JP2017038078A (ja) * 2011-12-23 2017-02-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9613860B2 (en) 2015-01-19 2017-04-04 Japan Display Inc. Method of manufacturing thin-film transistor
JP2018074178A (ja) * 2012-07-03 2018-05-10 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ 薄膜トランジスタの製造方法
JP2018156085A (ja) * 2010-09-13 2018-10-04 株式会社半導体エネルギー研究所 表示装置
JP2019110337A (ja) * 2012-06-27 2019-07-04 株式会社半導体エネルギー研究所 半導体装置

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CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
JP5361651B2 (ja) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101667909B1 (ko) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
WO2010047288A1 (en) 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
JP5616012B2 (ja) * 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8247276B2 (en) * 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
KR101782176B1 (ko) 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
CN105448937A (zh) 2009-09-16 2016-03-30 株式会社半导体能源研究所 晶体管及显示设备
KR101730347B1 (ko) 2009-09-16 2017-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101693544B1 (ko) 2009-09-24 2017-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
WO2011043203A1 (en) 2009-10-08 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance
KR101980505B1 (ko) 2009-10-08 2019-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체층, 반도체 장치 및 그 제조 방법
KR101396096B1 (ko) 2009-10-09 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101629194B1 (ko) 2009-10-30 2016-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
KR102481935B1 (ko) 2009-11-06 2022-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102220606B1 (ko) 2009-11-06 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR102513073B1 (ko) 2009-11-13 2023-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102640041A (zh) * 2009-11-27 2012-08-15 株式会社半导体能源研究所 液晶显示装置
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WO2011068033A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102656698B (zh) * 2009-12-29 2015-06-17 夏普株式会社 有源矩阵基板及其制造方法
US9142804B2 (en) * 2010-02-09 2015-09-22 Samsung Display Co., Ltd. Organic light-emitting device including barrier layer and method of manufacturing the same
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JP7704505B2 (ja) * 2021-07-01 2025-07-08 東京エレクトロン株式会社 半導体デバイスの製造方法
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