JP2008511996A - 半導体の構造とトランジスタ、および半導体の構造とトランジスタとを形成する方法 - Google Patents
半導体の構造とトランジスタ、および半導体の構造とトランジスタとを形成する方法 Download PDFInfo
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Abstract
【解決手段】
本発明は上面のある半導体基板を有するトランジスタを含む。1対のソース/ドレイン領域が半導体基板の中に形成され、またチャネル領域が半導体基板の中に形成されて半導体基板の上面に対して一般的に垂直に延びる。ゲートが半導体基板の中で1対のソース/ドレイン領域の間に形成される。
【選択図】 図1
Description
Claims (40)
- トランジスタ装置であって、
半導体基板と、
前記半導体基板内に延びるように形成されたゲートと、前記ゲートの上に形成されたゲート誘電体と、前記ゲートの相対する側に形成された1対のソース/ドレイン領域と、前記半導体基板内に形成されたチャネル領域とを備えるトランジスタ装置。 - 前記ゲート誘電体、前記1対のソース/ドレイン領域、および前記チャネル領域が前記半導体基板内に形成される請求項1のトランジスタ装置。
- ゲート誘電体の全体、1対のソース/ドレイン領域の全体、およびチャネル領域の全体が前記半導体基板内に形成される請求項1のトランジスタ装置。
- 前記ゲートが前記チャネル領域を囲む請求項1のトランジスタ装置。
- 前記チャネル領域が前記半導体基板内で前記1対のソース/ドレイン領域の下に縦方向に形成される請求項1のトランジスタ装置。
- 前記ゲートが前記チャネル領域を囲み、前記ゲートが前記1対のソース/ドレイン領域の1つを囲む請求項1のトランジスタ装置。
- 前記半導体基板が単結晶シリコンから成る請求項1のトランジスタ装置。
- DRAM装置に組み込まれたトランジスタをさらに備える請求項1のトランジスタ装置。
- メモリセルを形成するために前記トランジスタと電気的に結合されたデータ記憶素子をさらに備え、前記メモリセルが前記半導体基板の上に約4F2の面積を有し、ここにFはフォトリソグラフ的に規定される形状の最小加工寸法を表す請求項1のトランジスタ装置。
- トランジスタ装置であって、
上面を備える半導体基板と、
前記半導体基板内に形成された1対のソース/ドレイン領域と、
前記半導体基板内に形成され一般的に半導体基板の上面に対して垂直に延びるチャネル領域と、
前記1対のソース/ドレイン領域の間に形成されたゲートとを備えるトランジスタ装置。 - 前記チャネル領域が前記1対のソース/ドレイン領域の1つの直下に延びる請求項10のトランジスタ装置。
- 前記チャネル領域が前記1対のソース/ドレイン領域の1つの直下に延び、ゲートが前記半導体基板内に形成され、また前記チャネル領域を囲み、また1対のソース/ドレイン領域の1つを囲む請求項10のトランジスタ装置。
- 前記半導体基板が単結晶シリコンから成る請求項10のトランジスタ装置。
- DRAM装置に組み込まれたトランジスタをさらに備える請求項10のトランジスタ装置。
- メモリセルを形成するために前記1対のソース/ドレイン領域の1つに電気的に結合されたデータ記憶素子をさらに備え、前記メモリセルが前記半導体基板の上に約4F2の面積を備え、ここにFはフォトリソグラフ的に規定される形状の最小加工寸法を表す請求項10のトランジスタ装置。
- 半導体構造であって
半導体基板の上面から上方に延びる導電性ポストと、
前記半導体基板内で前記導電性ポストの下に形成され、前記導電性ポストと電気的に結合されているソース/ドレイン領域と、
前記ソース/ドレイン領域の下に延びるトランジスタチャネルと、
前記半導体基板内に前記トランジスタチャネルに隣接して形成されたゲートとを備える半導体構造。 - 前記導電性ポストがエピタキシャルシリコンポストから成る請求項16の半導体構造。
- 前記ソース/ドレイン領域がドレイン領域から成る請求項16の半導体構造。
- 前記導電性ポストに電気的に結合されたキャパシタをさらに備える請求項16の半導体構造。
- 前記構造がトランジスタを備え、さらにメモリセル構造に前記トランジスタを組み込み、前記導電性ポストがこのトランジスタをキャパシタに結合する請求項16の半導体構造。
- 前記半導体基板が一般的に水平方向であり、前記トランジスタチャネルが一般的に垂直方向に延びる請求項16の半導体構造。
- 前記半導体基板が単結晶シリコンから成る請求項16の半導体構造。
- 前記トランジスタチャネルに相対するゲートに隣接して形成されたもう1つのソース/ドレインと、
メモリセルを形成するために前記導電性ポストに電気的に結合されたデータ記憶素子とをさらに備え、前記メモリセルが前記半導体基板の上に約4F2の面積を有し、ここにFはフォトリソグラフ的に規定される形状の最小加工寸法を表す請求項16の半導体構造。 - 半導体構造を形成する方法であって、
半導体基板を供給し、
前記半導体基板中に開口を形成し、
前記開口内の半導体基板上に酸化膜を形成し、
前記酸化膜の上に導電性ゲート材料を供給して、前記開口を埋め、
前記半導体基板内でこのゲート材料と相対する側に1対の拡散領域を形成し、
前記半導体基板内で一般的に垂直方向に延びるチャネル領域を規定することを含む半導体構造を形成する方法。 - キャパシタを形成し、
前記キャパシタを前記1対の拡散領域の1つに電気的に結合することを含む請求項24の半導体構造を形成する方法。 - 前記半導体基板から前記1対の拡散領域の1つの上で上方に延びるエピタキシャルポストを形成し、
前記半導体基板上にキャパシタを形成し、
前記キャパシタを前記エピタキシャルポストに電気的に結合することを含む請求項24の半導体構造を形成する方法。 - 縦型トランジスタ構造であって、
シリコン基板と、
前記シリコン基板内で規定され、一般的に前記シリコン基板に対して垂直に延びるチャネル領域と、
前記チャネル領域の上に縦方向に形成される第1のソース/ドレイン領域と、
前記シリコン基板内でチャネル領域に隣接して横方向に形成されたゲートと、
前記チャネル領域に相対するゲートの側に形成された第2のソース/ドレイン領域とを備える、縦型トランジスタ構造。 - 前記シリコン基板が単結晶シリコンから成る請求項27の縦型トランジスタ構造。
- 前記第1のソース/ドレイン領域がドレイン領域から成る請求項27の縦型トランジスタ構造。
- 前記ゲートが前記チャネル領域を囲む請求項27の縦型トランジスタ構造。
- 前記ゲートが前記第1のソース/ドレイン領域を囲む請求項27の縦型トランジスタ構造。
- 前記ゲートが前記チャネル領域を囲み、また前記第1のソース/ドレイン領域を囲む請求項27の縦型トランジスタ構造。
- 前記第1のソース/ドレイン領域が前記シリコン基板の上に形成される請求項27の縦型トランジスタ構造。
- 前記第1のソース/ドレイン領域が前記シリコン基板の内部に形成される請求項27の縦型トランジスタ構造。
- 前記シリコン基板が上面を備え、前記第1のソース/ドレイン領域が前記上面の下から縦方向に延びる部分を備え、また前記上面の上から縦方向に延びる別の部分を備える請求項27の縦型トランジスタ構造。
- 前記第1のソース/ドレイン領域が前記シリコン基板から上方に延びるエピタキシャルポストを備える請求項27の縦型トランジスタ構造。
- 前記第1のソース/ドレイン領域が前記シリコン基板内に形成された拡散領域を備える請求項27の縦型トランジスタ構造。
- 前記第1のソース/ドレイン領域の部分が前記シリコン基板内に形成された拡散領域を備え、また前記第1のソース/ドレイン領域の他の部分が前記シリコン基板から上方に延びるエピタキシャルポストを備える請求項27の縦型トランジスタ構造。
- 前記シリコン基板から上方に延び、また前記第1のソース/ドレイン領域に電気的に結合されているエピタキシャルポストをさらに備え、前記エピタキシャルポストが縦型トランジスタに対する電気的接触を備える請求項27の縦型トランジスタ構造。
- 前記シリコン基板から上方にまた前記第1のソース/ドレイン領域の直接上から延びるエピタキシャルポストをさらに備え、前記エピタキシャルポストが縦型トランジスタに対する電気的接触を備える請求項27の縦型トランジスタ構造。
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PCT/US2005/030668 WO2006028775A2 (en) | 2004-09-01 | 2005-08-29 | Dram transistor with a gate buried in the substrate and method of forming thereof |
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2004
- 2004-09-01 US US10/932,150 patent/US7547945B2/en active Active
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2005
- 2005-08-29 JP JP2007530233A patent/JP2008511996A/ja active Pending
- 2005-08-29 CN CN200580038056A patent/CN100583414C/zh active Active
- 2005-08-29 SG SG200905780-3A patent/SG155882A1/en unknown
- 2005-08-29 EP EP05792363A patent/EP1784858A2/en not_active Withdrawn
- 2005-08-29 WO PCT/US2005/030668 patent/WO2006028775A2/en active Search and Examination
- 2005-08-29 EP EP10011474A patent/EP2267769A3/en not_active Withdrawn
- 2005-08-29 KR KR1020077004257A patent/KR100918156B1/ko active IP Right Grant
- 2005-09-02 TW TW094130193A patent/TWI287270B/zh active
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2006
- 2006-07-31 US US11/496,930 patent/US7501684B2/en active Active
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- 2008-02-15 US US12/070,078 patent/US7825462B2/en active Active
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US8120101B2 (en) | 2012-02-21 |
SG155882A1 (en) | 2009-10-29 |
TWI287270B (en) | 2007-09-21 |
US7825462B2 (en) | 2010-11-02 |
EP2267769A3 (en) | 2011-08-24 |
US7501684B2 (en) | 2009-03-10 |
EP1784858A2 (en) | 2007-05-16 |
US7547945B2 (en) | 2009-06-16 |
CN100583414C (zh) | 2010-01-20 |
WO2006028775A3 (en) | 2006-04-27 |
US20080142882A1 (en) | 2008-06-19 |
EP2267769A2 (en) | 2010-12-29 |
TW200633137A (en) | 2006-09-16 |
CN101057322A (zh) | 2007-10-17 |
US20060043449A1 (en) | 2006-03-02 |
KR20070034131A (ko) | 2007-03-27 |
US20060261393A1 (en) | 2006-11-23 |
KR100918156B1 (ko) | 2009-09-17 |
WO2006028775A2 (en) | 2006-03-16 |
US20110012182A1 (en) | 2011-01-20 |
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