JP2007226934A - 向上されたリフレッシュメカニズムを有するダイナミック半導体メモリ - Google Patents
向上されたリフレッシュメカニズムを有するダイナミック半導体メモリ Download PDFInfo
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- G11C—STATIC STORES
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- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
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- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40618—Refresh operations over multiple banks or interleaving
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4082—Address Buffers; level conversion circuits
Abstract
【解決手段】同期式ダイナミックメモリ回路において、それぞれ複数のメモリセルを有する複数のメモリバンクと、動作モードを表す命令入力信号に応答する命令デコーダと、正常アクセスのためのメモリセルの位置を表すアドレス入力信号に応答するアドレスデコーダと、ヒドンリフレッシュ命令に応答しヒドンリフレッシュ信号を生成するヒドンリフレッシュ検出器と、ヒドンリフレッシュ信号に応答し正常アクセス動作と同じ時間に実行され得るヒドンリフレッシュ動作を開始するリフレッシュコントローラと、リフレッシュコントローラに接続されヒドンリフレッシュ動作のためのメモリアドレスを生成するリフレッシュアドレス生成器とを備え、ここで、ヒドンリフレッシュ動作及び正常アクセス動作が周期的なクロック信号に応答して発生するメモリ回路を提供する。
【選択図】図1
Description
108 命令デコーダ
124 リフレッシュコントローラ
126 リフレッシュカウンタ
Claims (18)
- 同期式ダイナミックメモリ回路において、
それぞれ複数のメモリセルを有する複数のメモリバンクと、
動作モードを表す命令入力信号に応答する命令デコーダと、
正常アクセスのためのメモリセルの位置を表すアドレス入力信号に応答するアドレスデコーダと、
ヒドンリフレッシュ命令に応答し、ヒドンリフレッシュ信号を生成するように構成されたヒドンリフレッシュ検出器と、
前記ヒドンリフレッシュ信号に応答し、正常アクセス動作と同じ時間に実行され得るヒドンリフレッシュ動作を開始するように構成されたリフレッシュコントローラと、
前記リフレッシュコントローラに接続され、前記ヒドンリフレッシュ動作のためのメモリアドレスを生成するように構成されたリフレッシュアドレス生成器と
を備え、
ここで、前記ヒドンリフレッシュ動作及び前記正常アクセス動作が、周期的なクロック信号に応答して発生することを特徴とするメモリ回路。 - 前記正常アクセス動作と前記リフレッシュ動作とが、前記複数のメモリバンクのうち、同じバンクにおいて同じ時間に発生し得ることを特徴とする請求項1に記載のメモリ回路。
- リフレッシュアドレスを正常アクセスアドレスと比較し、アドレス衝突のとき、アドレス衝突信号を生成するように構成されたアドレス比較器をさらに備え、
ここで、前記リフレッシュコントローラが前記アドレス衝突信号に応答して前記リフレッシュ動作を取り消し、正常アクセス動作が行われるように許容することを特徴とする請求項1に記載のメモリ回路。 - 前記アドレス衝突信号に応答し、アドレス衝突のとき、前記ヒドンリフレッシュ動作をディセーブルさせるように構成されたリフレッシュ禁止論理をさらに備えたことを特徴とする請求項3に記載のメモリ回路。
- 前記リフレッシュコントローラが、正常リフレッシュ動作を開始するために正常リフレッシュ信号にさらに応答し、その間、正常アクセス動作が行われないことを特徴とする請求項3に記載のメモリ回路。
- 前記正常リフレッシュ動作が、セルフリフレッシュ動作モードまたは自動リフレッシュ動作モードであることを特徴とする請求項5に記載のメモリ回路。
- バンク選択信号を受信し、前記複数のメモリバンクの何れかひとつを選択するバンクアドレス信号を生成するバンク選択回路をさらに備えたことを特徴とする請求項1に記載のメモリ回路。
- 前記バンク選択信号を受信し、前記複数のメモリバンクの何れかひとつ、またはそれ以上のバンクに供給されるバンク制御信号を生成するバンク制御回路をさらに備えたことを特徴とする請求項7に記載のメモリ回路。
- 前記正常アクセス動作が、周期的なクロック信号の時間t1にて開始し、前記ヒドンリフレッシュ動作が前記周期的なクロック信号の時間t2にて開始し、
ここで、時間t1及び時間t2が前記周期的なクロック信号の異なるエッジにおいて発生することを特徴とする請求項1に記載のメモリ回路。 - 前記バンク選択回路が、前記正常アクセス動作のための第1バンクアドレス信号及び前記ヒドンリフレッシュ動作のための第2バンクアドレス信号を生成することを特徴とする請求項7に記載のメモリ回路。
- 前記正常アクセス動作及び前記ヒドンリフレッシュ動作が、前記周期的なクロック信号の同じエッジにおいて開始することを特徴とする請求項1に記載のメモリ回路。
- 前記ヒドンリフレッシュ検出器が、ヒドンリフレッシュ動作が発生する特定のメモリバンクを識別するヒドンリフレッシュバンク選択信号を受信することを特徴とする請求項8に記載のメモリ回路。
- 前記動作モードの何れかひとつがヒドンリフレッシュ動作であり、ここで、前記複数のリフレッシュメモリバンクにおけるメモリセルが正常アクセス動作の間にリフレッシュできることを特徴とする請求項12に記載のメモリ回路。
- 前記動作モードの何れかひとつが正常リフレッシュ動作であり、ここで、メモリセルの正常リフレッシュの間に、メモリバンクが正常アクセス動作に利用できないことを特徴とする請求項13に記載のメモリ回路。
- リフレッシュ命令が、外部信号であることを特徴とする請求項10に記載のメモリ回路。
- 前記リフレッシュ命令が、モードレジスタに格納されることを特徴とする請求項10に記載のメモリ回路。
- 同期式ダイナミックメモリ回路を動作させるための方法において、
複数のメモリバンクの何れかにおけるメモリセルが、周期的なクロック信号に応じて読み出しまたは書き込み動作のためにアクセスできるように正常アクセス動作モードに入るステップと、
前記複数のメモリバンクの何れかにおけるメモリセルが、前記周期的なクロック信号に応じてリフレッシュできるようにヒドンリフレッシュ動作モードに入るステップと、
前記正常アクセス動作モードの第1メモリアドレスを前記ヒドンリフレッシュ動作モードの第2メモリアドレスと比較するステップと、
前記第1メモリアドレスと前記第2メモリアドレスとの間の衝突のとき、前記ヒドンリフレッシュ動作モードと関わるプリチャージ信号を抑制するステップと
を含み、
ここで、前記正常アクセス動作モードと前記ヒドンリフレッシュ動作モードとが、同じ時間に同じバンク内で発生し得ることを特徴とする方法。 - 前記第1メモリアドレスと前記第2メモリアドレスとの間の衝突のとき、前記正常アクセス動作モードと関わるプリチャージ信号に応じてプリチャージ動作を行うステップをさらに含むことを特徴とする請求項17に記載の方法。
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US77610906P | 2006-02-23 | 2006-02-23 | |
US60/776109 | 2006-02-23 | ||
US11/378,183 US7313047B2 (en) | 2006-02-23 | 2006-03-16 | Dynamic semiconductor memory with improved refresh mechanism |
US11/378183 | 2006-03-16 |
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Also Published As
Publication number | Publication date |
---|---|
TWI303422B (en) | 2008-11-21 |
US20080137464A1 (en) | 2008-06-12 |
CN100573709C (zh) | 2009-12-23 |
DE102006029703A1 (de) | 2007-08-30 |
US8072829B2 (en) | 2011-12-06 |
US20110051528A1 (en) | 2011-03-03 |
JP5063041B2 (ja) | 2012-10-31 |
CN101026003A (zh) | 2007-08-29 |
KR100810040B1 (ko) | 2008-03-06 |
US7869297B2 (en) | 2011-01-11 |
TW200733099A (en) | 2007-09-01 |
US20070195627A1 (en) | 2007-08-23 |
KR20070087477A (ko) | 2007-08-28 |
US7313047B2 (en) | 2007-12-25 |
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