JP2007019187A5 - - Google Patents
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- JP2007019187A5 JP2007019187A5 JP2005197938A JP2005197938A JP2007019187A5 JP 2007019187 A5 JP2007019187 A5 JP 2007019187A5 JP 2005197938 A JP2005197938 A JP 2005197938A JP 2005197938 A JP2005197938 A JP 2005197938A JP 2007019187 A5 JP2007019187 A5 JP 2007019187A5
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- Prior art keywords
- film
- interlayer insulating
- insulating film
- forming
- via hole
- Prior art date
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Priority Applications (26)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005197938A JP5096669B2 (ja) | 2005-07-06 | 2005-07-06 | 半導体集積回路装置の製造方法 |
| US11/453,882 US7354855B2 (en) | 2005-07-06 | 2006-06-16 | Semiconductor device and a method of manufacturing the same |
| TW098120878A TWI389254B (zh) | 2005-07-06 | 2006-06-22 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
| TW095122404A TWI385757B (zh) | 2005-07-06 | 2006-06-22 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
| TW102102115A TWI525747B (zh) | 2005-07-06 | 2006-06-22 | Semiconductor integrated circuit device and method for manufacturing semiconductor integrated circuit device |
| CN2009101691985A CN101656229B (zh) | 2005-07-06 | 2006-07-05 | 半导体器件及其制造方法 |
| CNB2006101002616A CN100559565C (zh) | 2005-07-06 | 2006-07-05 | 半导体器件及其制造方法 |
| KR1020060063325A KR101328862B1 (ko) | 2005-07-06 | 2006-07-06 | 반도체집적회로장치 및 반도체집적회로장치의 제조 방법 |
| US12/031,046 US7932606B2 (en) | 2005-07-06 | 2008-02-14 | Semiconductor device and a method of manufacturing the same |
| US12/141,172 US7629251B2 (en) | 2005-07-06 | 2008-06-18 | Semiconductor device and a method of manufacturing the same |
| US12/141,195 US7557034B2 (en) | 2005-07-06 | 2008-06-18 | Semiconductor device and a method of manufacturing the same |
| US13/081,332 US8487412B2 (en) | 2005-07-06 | 2011-04-06 | Semiconductor device and a method of manufacturing the same |
| KR1020110054737A KR101344146B1 (ko) | 2005-07-06 | 2011-06-07 | 반도체집적회로장치 및 반도체집적회로장치의 제조 방법 |
| US13/525,195 US8518821B2 (en) | 2005-07-06 | 2012-06-15 | Semiconductor device and a method of manufacturing the same |
| US13/525,251 US8581415B2 (en) | 2005-07-06 | 2012-06-15 | Semiconductor device and a method of manufacturing the same |
| US14/042,938 US8704373B2 (en) | 2005-07-06 | 2013-10-01 | Semiconductor device and a method of manufacturing the same |
| US14/214,975 US20140199831A1 (en) | 2005-07-06 | 2014-03-16 | Semiconductor device and a method of manufacturing the same |
| US14/696,365 US9391022B2 (en) | 2005-07-06 | 2015-04-24 | Semiconductor device and a method of manufacturing the same |
| US15/181,995 US9899316B2 (en) | 2005-07-06 | 2016-06-14 | Semiconductor device and a method of manufacturing the same |
| US15/616,899 US10141257B2 (en) | 2005-07-06 | 2017-06-07 | Semiconductor device and a method of manufacturing the same |
| US16/169,796 US10600683B2 (en) | 2005-07-06 | 2018-10-24 | Semiconductor device and a method of manufacturing the same |
| US16/817,544 US10796953B2 (en) | 2005-07-06 | 2020-03-12 | Semiconductor device and a method of manufacturing the same |
| US17/023,327 US11062938B2 (en) | 2005-07-06 | 2020-09-16 | Semiconductor device and a method of manufacturing the same |
| US17/343,448 US11600522B2 (en) | 2005-07-06 | 2021-06-09 | Semiconductor device and a method of manufacturing the same |
| US18/164,153 US12154823B2 (en) | 2005-07-06 | 2023-02-03 | Semiconductor device and a method of manufacturing the same |
| US18/922,646 US20250046653A1 (en) | 2005-07-06 | 2024-10-22 | Semiconductor device and a method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005197938A JP5096669B2 (ja) | 2005-07-06 | 2005-07-06 | 半導体集積回路装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008174669A Division JP4891296B2 (ja) | 2008-07-03 | 2008-07-03 | 半導体集積回路装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007019187A JP2007019187A (ja) | 2007-01-25 |
| JP2007019187A5 true JP2007019187A5 (enExample) | 2008-08-21 |
| JP5096669B2 JP5096669B2 (ja) | 2012-12-12 |
Family
ID=37597708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005197938A Expired - Lifetime JP5096669B2 (ja) | 2005-07-06 | 2005-07-06 | 半導体集積回路装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (18) | US7354855B2 (enExample) |
| JP (1) | JP5096669B2 (enExample) |
| KR (2) | KR101328862B1 (enExample) |
| CN (2) | CN101656229B (enExample) |
| TW (3) | TWI525747B (enExample) |
Families Citing this family (66)
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| JP4699172B2 (ja) * | 2005-10-25 | 2011-06-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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| TWI254986B (en) * | 2004-12-29 | 2006-05-11 | United Microelectronics Corp | Method for fabricating a dual damascene and polymer removal |
| CN101213667B (zh) * | 2005-07-04 | 2012-05-30 | 富士通半导体股份有限公司 | 半导体器件及其制造方法 |
| JP5096669B2 (ja) * | 2005-07-06 | 2012-12-12 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| KR100632467B1 (ko) * | 2005-08-12 | 2006-10-09 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조 방법 |
| US7964470B2 (en) * | 2006-03-01 | 2011-06-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Flexible processing method for metal-insulator-metal capacitor formation |
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