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Priority claimed from US10/890,622external-prioritypatent/US7172964B2/en
Application filed by Taiwan Semiconductor MfgfiledCriticalTaiwan Semiconductor Mfg
Publication of TW200603239ApublicationCriticalpatent/TW200603239A/en
Application grantedgrantedCritical
Publication of TWI267116BpublicationCriticalpatent/TWI267116B/en
A method comprises forming a low-dielectric constant (low-k) layer over a semiconductor substrate, forming an anti-reflective layer over the low-k layer, forming at least one opening in the anti-reflective layer and in the low-k layer, forming a nitrogen-free liner in the at least one opening, and forming at least one recess through the nitrogen-free liner, the anti-reflective layer, and at least partially into the low-k layer, the at least one recess is disposed over the at least one opening.
TW94123699A2004-07-142005-07-13Method of preventing photoresist poisoning of a low-dielectric-constant insulator
TWI267116B
(en)
Method for forming a dielectric barrier in an integrated circuit structure, interconnect structure and semiconductor device and methods for making the same