|
KR100490322B1
(ko)
*
|
2003-04-07 |
2005-05-17 |
삼성전자주식회사 |
유기전계발광 표시장치
|
|
CN101335320B
(zh)
|
2003-09-19 |
2012-06-06 |
霆激科技股份有限公司 |
用于制作发光器件的方法
|
|
US8193612B2
(en)
*
|
2004-02-12 |
2012-06-05 |
International Rectifier Corporation |
Complimentary nitride transistors vertical and common drain
|
|
EP1730790B1
(en)
*
|
2004-03-15 |
2011-11-09 |
Tinggi Technologies Private Limited |
Fabrication of semiconductor devices
|
|
US8309377B2
(en)
|
2004-04-07 |
2012-11-13 |
Tinggi Technologies Private Limited |
Fabrication of reflective layer on semiconductor light emitting devices
|
|
US20050269695A1
(en)
*
|
2004-06-07 |
2005-12-08 |
Brogle James J |
Surface-mount chip-scale package
|
|
KR100604465B1
(ko)
|
2004-07-19 |
2006-07-25 |
김성진 |
질화물계 반도체 전계효과 트랜지스터 및 그 제조 방법
|
|
US7259402B2
(en)
*
|
2004-09-22 |
2007-08-21 |
Cree, Inc. |
High efficiency group III nitride-silicon carbide light emitting diode
|
|
US8513686B2
(en)
*
|
2004-09-22 |
2013-08-20 |
Cree, Inc. |
High output small area group III nitride LEDs
|
|
US8174037B2
(en)
*
|
2004-09-22 |
2012-05-08 |
Cree, Inc. |
High efficiency group III nitride LED with lenticular surface
|
|
US7737459B2
(en)
*
|
2004-09-22 |
2010-06-15 |
Cree, Inc. |
High output group III nitride light emitting diodes
|
|
WO2006050403A2
(en)
*
|
2004-10-28 |
2006-05-11 |
Nitronex Corporation |
Gallium nitride/silicon based monolithic microwave integrated circuit
|
|
DE102004059884A1
(de)
*
|
2004-12-10 |
2006-06-29 |
Forschungsverbund Berlin E.V. |
Verfahren zur Flip-Chip-Montage von Mikrochips und damit hergestellte elektronische Baugruppe
|
|
US7800097B2
(en)
*
|
2004-12-13 |
2010-09-21 |
Panasonic Corporation |
Semiconductor device including independent active layers and method for fabricating the same
|
|
US8288942B2
(en)
*
|
2004-12-28 |
2012-10-16 |
Cree, Inc. |
High efficacy white LED
|
|
US7615774B2
(en)
*
|
2005-04-29 |
2009-11-10 |
Cree.Inc. |
Aluminum free group III-nitride based high electron mobility transistors
|
|
US7723842B2
(en)
*
|
2005-09-02 |
2010-05-25 |
Semiconductor Energy Laboratory Co., Ltd |
Integrated circuit device
|
|
SG130975A1
(en)
*
|
2005-09-29 |
2007-04-26 |
Tinggi Tech Private Ltd |
Fabrication of semiconductor devices for light emission
|
|
SG131803A1
(en)
*
|
2005-10-19 |
2007-05-28 |
Tinggi Tech Private Ltd |
Fabrication of transistors
|
|
SG133432A1
(en)
*
|
2005-12-20 |
2007-07-30 |
Tinggi Tech Private Ltd |
Localized annealing during semiconductor device fabrication
|
|
US9252067B1
(en)
*
|
2006-01-25 |
2016-02-02 |
Lockheed Martin Corporation |
Hybrid microwave integrated circuit
|
|
US8791645B2
(en)
|
2006-02-10 |
2014-07-29 |
Honeywell International Inc. |
Systems and methods for controlling light sources
|
|
JP2007243080A
(ja)
*
|
2006-03-13 |
2007-09-20 |
Fuji Electric Holdings Co Ltd |
半導体装置およびその製造方法
|
|
US8623737B2
(en)
*
|
2006-03-31 |
2014-01-07 |
Intel Corporation |
Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
|
|
BRPI0712439B1
(pt)
*
|
2006-05-31 |
2019-11-05 |
Cree, Inc. |
dispositivo de iluminação e método de iluminação
|
|
JP5060550B2
(ja)
*
|
2006-06-20 |
2012-10-31 |
エヌエックスピー ビー ヴィ |
パワーアンプ・アセンブリ
|
|
SG140473A1
(en)
|
2006-08-16 |
2008-03-28 |
Tinggi Tech Private Ltd |
Improvements in external light efficiency of light emitting diodes
|
|
SG140512A1
(en)
*
|
2006-09-04 |
2008-03-28 |
Tinggi Tech Private Ltd |
Electrical current distribution in light emitting devices
|
|
JP5091445B2
(ja)
*
|
2006-09-15 |
2012-12-05 |
株式会社東芝 |
半導体装置およびその製造方法
|
|
JP2008311527A
(ja)
*
|
2007-06-15 |
2008-12-25 |
Oki Electric Ind Co Ltd |
高周波半導体回路
|
|
US8350382B2
(en)
|
2007-09-21 |
2013-01-08 |
Infineon Technologies Ag |
Semiconductor device including electronic component coupled to a backside of a chip
|
|
US8143654B1
(en)
*
|
2008-01-16 |
2012-03-27 |
Triquint Semiconductor, Inc. |
Monolithic microwave integrated circuit with diamond layer
|
|
US8026581B2
(en)
*
|
2008-02-05 |
2011-09-27 |
International Rectifier Corporation |
Gallium nitride material devices including diamond regions and methods associated with the same
|
|
US7965126B2
(en)
|
2008-02-12 |
2011-06-21 |
Transphorm Inc. |
Bridge circuits and their components
|
|
US7939449B2
(en)
*
|
2008-06-03 |
2011-05-10 |
Micron Technology, Inc. |
Methods of forming hybrid conductive vias including small dimension active surface ends and larger dimension back side ends
|
|
US9165841B2
(en)
|
2008-09-19 |
2015-10-20 |
Intel Corporation |
System and process for fabricating semiconductor packages
|
|
US9164404B2
(en)
*
|
2008-09-19 |
2015-10-20 |
Intel Corporation |
System and process for fabricating semiconductor packages
|
|
US8289065B2
(en)
|
2008-09-23 |
2012-10-16 |
Transphorm Inc. |
Inductive load power switching circuits
|
|
TW201034186A
(en)
*
|
2009-03-10 |
2010-09-16 |
Univ Chang Gung |
High electron mobility field-effect transistor device
|
|
WO2010117987A1
(en)
*
|
2009-04-08 |
2010-10-14 |
Efficient Power Conversion Corporation |
Bumped, self-isolated gan transistor chip with electrically isolated back surface
|
|
US8865489B2
(en)
|
2009-05-12 |
2014-10-21 |
The Board Of Trustees Of The University Of Illinois |
Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
|
|
JP5631607B2
(ja)
*
|
2009-08-21 |
2014-11-26 |
株式会社東芝 |
マルチチップモジュール構造を有する高周波回路
|
|
US8138529B2
(en)
*
|
2009-11-02 |
2012-03-20 |
Transphorm Inc. |
Package configurations for low EMI circuits
|
|
US8816497B2
(en)
*
|
2010-01-08 |
2014-08-26 |
Transphorm Inc. |
Electronic devices and components for high efficiency power circuits
|
|
US8624662B2
(en)
|
2010-02-05 |
2014-01-07 |
Transphorm Inc. |
Semiconductor electronic components and circuits
|
|
EP2567404B1
(en)
*
|
2010-05-02 |
2017-07-12 |
Visic Technologies Ltd. |
Field effect power transistors
|
|
US9064712B2
(en)
|
2010-08-12 |
2015-06-23 |
Freescale Semiconductor Inc. |
Monolithic microwave integrated circuit
|
|
KR20120027988A
(ko)
|
2010-09-14 |
2012-03-22 |
삼성엘이디 주식회사 |
질화갈륨계 반도체소자 및 그 제조방법
|
|
KR20120027987A
(ko)
*
|
2010-09-14 |
2012-03-22 |
삼성엘이디 주식회사 |
질화갈륨계 반도체소자 및 그 제조방법
|
|
US8519548B2
(en)
|
2010-11-19 |
2013-08-27 |
Electronics And Telecommunications Research Institute |
Wafer level packaged GaN power device and the manufacturing method thereof
|
|
KR101719670B1
(ko)
*
|
2010-11-19 |
2017-03-24 |
한국전자통신연구원 |
ＧａＮ계 화합물 전력반도체 장치 및 그 제조 방법
|
|
US9899329B2
(en)
|
2010-11-23 |
2018-02-20 |
X-Celeprint Limited |
Interconnection structures and methods for transfer-printed integrated circuit elements with improved interconnection alignment tolerance
|
|
US8786327B2
(en)
|
2011-02-28 |
2014-07-22 |
Transphorm Inc. |
Electronic components with reactive filters
|
|
JP5968674B2
(ja)
*
|
2011-05-13 |
2016-08-10 |
エルジー イノテック カンパニー リミテッド |
発光素子パッケージ及びこれを備える紫外線ランプ
|
|
WO2012158709A1
(en)
|
2011-05-16 |
2012-11-22 |
The Board Of Trustees Of The University Of Illinois |
Thermally managed led arrays assembled by printing
|
|
US8889485B2
(en)
|
2011-06-08 |
2014-11-18 |
Semprius, Inc. |
Methods for surface attachment of flipped active componenets
|
|
KR101955337B1
(ko)
*
|
2011-10-19 |
2019-03-07 |
삼성전자주식회사 |
문턱전압 변동을 줄인 고 전자 이동도 트랜지스터 및 그 제조방법
|
|
US9209176B2
(en)
|
2011-12-07 |
2015-12-08 |
Transphorm Inc. |
Semiconductor modules and methods of forming the same
|
|
KR101869045B1
(ko)
*
|
2012-01-11 |
2018-06-19 |
삼성전자 주식회사 |
고전자이동도 트랜지스터 및 그 제조방법
|
|
US8648643B2
(en)
|
2012-02-24 |
2014-02-11 |
Transphorm Inc. |
Semiconductor power modules and devices
|
|
US8575657B2
(en)
*
|
2012-03-20 |
2013-11-05 |
Northrop Grumman Systems Corporation |
Direct growth of diamond in backside vias for GaN HEMT devices
|
|
KR101913387B1
(ko)
|
2012-03-23 |
2018-10-30 |
삼성전자주식회사 |
Ⅲ족 질화물 이종 접합 구조 소자의 선택적 저온 오믹 콘택 형성 방법
|
|
US9136341B2
(en)
|
2012-04-18 |
2015-09-15 |
Rf Micro Devices, Inc. |
High voltage field effect transistor finger terminations
|
|
JP5955619B2
(ja)
*
|
2012-04-18 |
2016-07-20 |
シャープ株式会社 |
半導体装置およびインバータ装置
|
|
US8901606B2
(en)
|
2012-04-30 |
2014-12-02 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer
|
|
KR101928814B1
(ko)
*
|
2012-05-04 |
2018-12-14 |
한국전자통신연구원 |
질화물계 화합물 전력반도체 장치 및 그 제조 방법
|
|
JP5924110B2
(ja)
*
|
2012-05-11 |
2016-05-25 |
株式会社ソシオネクスト |
半導体装置、半導体装置モジュールおよび半導体装置の製造方法
|
|
JP6003238B2
(ja)
*
|
2012-05-30 |
2016-10-05 |
住友電気工業株式会社 |
半導体装置
|
|
US9124221B2
(en)
|
2012-07-16 |
2015-09-01 |
Rf Micro Devices, Inc. |
Wide bandwidth radio frequency amplier having dual gate transistors
|
|
US8803246B2
(en)
|
2012-07-16 |
2014-08-12 |
Transphorm Inc. |
Semiconductor electronic components with integrated current limiters
|
|
US9142620B2
(en)
*
|
2012-08-24 |
2015-09-22 |
Rf Micro Devices, Inc. |
Power device packaging having backmetals couple the plurality of bond pads to the die backside
|
|
US9917080B2
(en)
|
2012-08-24 |
2018-03-13 |
Qorvo US. Inc. |
Semiconductor device with electrical overstress (EOS) protection
|
|
US8988097B2
(en)
|
2012-08-24 |
2015-03-24 |
Rf Micro Devices, Inc. |
Method for on-wafer high voltage testing of semiconductor devices
|
|
US9202874B2
(en)
|
2012-08-24 |
2015-12-01 |
Rf Micro Devices, Inc. |
Gallium nitride (GaN) device with leakage current-based over-voltage protection
|
|
US9147632B2
(en)
|
2012-08-24 |
2015-09-29 |
Rf Micro Devices, Inc. |
Semiconductor device having improved heat dissipation
|
|
US9070761B2
(en)
|
2012-08-27 |
2015-06-30 |
Rf Micro Devices, Inc. |
Field effect transistor (FET) having fingers with rippled edges
|
|
US9129802B2
(en)
|
2012-08-27 |
2015-09-08 |
Rf Micro Devices, Inc. |
Lateral semiconductor device with vertical breakdown region
|
|
KR101919422B1
(ko)
|
2012-09-28 |
2019-02-08 |
삼성전자주식회사 |
질화물 반도체 기반의 파워 변환 장치
|
|
US9087905B2
(en)
|
2012-10-03 |
2015-07-21 |
International Business Machines Corporation |
Transistor formation using cold welding
|
|
US9082748B2
(en)
*
|
2012-10-05 |
2015-07-14 |
Micron Technology, Inc. |
Devices, systems, and methods related to removing parasitic conduction in semiconductor devices
|
|
US9325281B2
(en)
|
2012-10-30 |
2016-04-26 |
Rf Micro Devices, Inc. |
Power amplifier controller
|
|
US8853743B2
(en)
|
2012-11-16 |
2014-10-07 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Pseudomorphic high electron mobility transistor comprising doped low temperature buffer layer
|
|
US20140209926A1
(en)
*
|
2013-01-28 |
2014-07-31 |
Win Semiconductors Corp. |
Semiconductor integrated circuit
|
|
US10096583B2
(en)
|
2013-01-28 |
2018-10-09 |
WIN Semiconductos Corp. |
Method for fabricating a semiconductor integrated chip
|
|
US9673186B2
(en)
|
2013-01-28 |
2017-06-06 |
Win Semiconductors Corp. |
Semiconductor integrated circuit
|
|
US20140253279A1
(en)
*
|
2013-03-08 |
2014-09-11 |
Qualcomm Incorporated |
Coupled discrete inductor with flux concentration using high permeable material
|
|
US9059076B2
(en)
|
2013-04-01 |
2015-06-16 |
Transphorm Inc. |
Gate drivers for circuits based on semiconductor devices
|
|
US9537425B2
(en)
|
2013-07-09 |
2017-01-03 |
Transphorm Inc. |
Multilevel inverters and their components
|
|
US9525063B2
(en)
|
2013-10-30 |
2016-12-20 |
Infineon Technologies Austria Ag |
Switching circuit
|
|
US9048838B2
(en)
*
|
2013-10-30 |
2015-06-02 |
Infineon Technologies Austria Ag |
Switching circuit
|
|
KR102163725B1
(ko)
*
|
2013-12-03 |
2020-10-08 |
삼성전자주식회사 |
반도체 소자 및 그 제조방법
|
|
KR20150086014A
(ko)
|
2014-01-17 |
2015-07-27 |
한국전자통신연구원 |
개선된 본딩 패드 구조를 갖는 GaN 트랜지스터 및 그의 제조방법
|
|
US9455327B2
(en)
|
2014-06-06 |
2016-09-27 |
Qorvo Us, Inc. |
Schottky gated transistor with interfacial layer
|
|
CN107155373B
(zh)
|
2014-06-18 |
2019-01-15 |
艾克斯瑟乐普林特有限公司 |
微组装led显示器
|
|
US9543940B2
(en)
|
2014-07-03 |
2017-01-10 |
Transphorm Inc. |
Switching circuits having ferrite beads
|
|
US9590494B1
(en)
|
2014-07-17 |
2017-03-07 |
Transphorm Inc. |
Bridgeless power factor correction circuits
|
|
US9536803B2
(en)
|
2014-09-05 |
2017-01-03 |
Qorvo Us, Inc. |
Integrated power module with improved isolation and thermal conductivity
|
|
US9799719B2
(en)
|
2014-09-25 |
2017-10-24 |
X-Celeprint Limited |
Active-matrix touchscreen
|
|
FR3028095B1
(fr)
*
|
2014-11-04 |
2018-01-26 |
Commissariat A L'energie Atomique Et Aux Energies Alternatives |
Dispositif electronique de puissance a cellule de commutation 3d verticale
|
|
JP2016111400A
(ja)
*
|
2014-12-02 |
2016-06-20 |
サムソン エレクトロ−メカニックス カンパニーリミテッド． |
高周波電力増幅装置及び無線通信装置
|
|
US10600718B1
(en)
*
|
2014-12-03 |
2020-03-24 |
Ii-Vi Delaware, Inc. |
Heat sink package
|
|
US9991370B2
(en)
*
|
2014-12-15 |
2018-06-05 |
The Royal Institution For The Advancement Of Learning/Mcgill University |
Methods and systems for ultra-high quality gated hybrid devices and sensors
|
|
GB2533767B
(en)
*
|
2014-12-16 |
2019-06-19 |
Leonardo Mw Ltd |
Integrated circuits and methods of manufacturing.
|
|
US10615158B2
(en)
|
2015-02-04 |
2020-04-07 |
Qorvo Us, Inc. |
Transition frequency multiplier semiconductor device
|
|
US10062684B2
(en)
|
2015-02-04 |
2018-08-28 |
Qorvo Us, Inc. |
Transition frequency multiplier semiconductor device
|
|
CN110913565A
(zh)
*
|
2015-02-10 |
2020-03-24 |
宁波舜宇光电信息有限公司 |
一种可散热的线路板装置及其散热方法和制造方法
|
|
US10200030B2
(en)
|
2015-03-13 |
2019-02-05 |
Transphorm Inc. |
Paralleling of switching devices for high power circuits
|
|
US10217914B2
(en)
|
2015-05-27 |
2019-02-26 |
Samsung Electronics Co., Ltd. |
Semiconductor light emitting device
|
|
CN107771416B
(zh)
|
2015-06-22 |
2021-05-28 |
瑞典爱立信有限公司 |
用于无埋块的rf功率放大器的滑动和安装制造
|
|
US10594355B2
(en)
|
2015-06-30 |
2020-03-17 |
Skyworks Solutions, Inc. |
Devices and methods related to radio-frequency filters on silicon-on-insulator substrate
|
|
DE102015111307A1
(de)
*
|
2015-07-13 |
2017-01-19 |
Epcos Ag |
Bauelement mit verbesserter Wärmeableitung
|
|
US10380930B2
(en)
|
2015-08-24 |
2019-08-13 |
X-Celeprint Limited |
Heterogeneous light emitter display system
|
|
US10230048B2
(en)
|
2015-09-29 |
2019-03-12 |
X-Celeprint Limited |
OLEDs for micro transfer printing
|
|
US10066819B2
(en)
|
2015-12-09 |
2018-09-04 |
X-Celeprint Limited |
Micro-light-emitting diode backlight system
|
|
TWI681508B
(zh)
|
2016-02-25 |
2020-01-01 |
愛爾蘭商艾克斯瑟樂普林特有限公司 |
有效率地微轉印微型裝置於大尺寸基板上
|
|
US10153256B2
(en)
|
2016-03-03 |
2018-12-11 |
X-Celeprint Limited |
Micro-transfer printable electronic component
|
|
US10199546B2
(en)
|
2016-04-05 |
2019-02-05 |
X-Celeprint Limited |
Color-filter device
|
|
US10008483B2
(en)
|
2016-04-05 |
2018-06-26 |
X-Celeprint Limited |
Micro-transfer printed LED and color filter structure
|
|
CN107546207A
(zh)
*
|
2016-06-29 |
2018-01-05 |
江西省昌大光电科技有限公司 |
一种GaN基电子器件及其制备方法
|
|
TWI620356B
(zh)
*
|
2016-10-07 |
2018-04-01 |
欣興電子股份有限公司 |
封裝結構及其製作方法
|
|
US10395966B2
(en)
|
2016-11-15 |
2019-08-27 |
X-Celeprint Limited |
Micro-transfer-printable flip-chip structures and methods
|
|
TWI739949B
(zh)
|
2016-11-15 |
2021-09-21 |
愛爾蘭商艾克斯展示公司技術有限公司 |
微轉印可印刷覆晶結構及方法
|
|
US10600671B2
(en)
|
2016-11-15 |
2020-03-24 |
X-Celeprint Limited |
Micro-transfer-printable flip-chip structures and methods
|
|
US11101380B2
(en)
|
2017-02-02 |
2021-08-24 |
Intel Corporation |
Group III-nitride integrated front-end circuit
|
|
US10468391B2
(en)
|
2017-02-08 |
2019-11-05 |
X-Celeprint Limited |
Inorganic light-emitting-diode displays with multi-ILED pixels
|
|
JP2018137287A
(ja)
*
|
2017-02-20 |
2018-08-30 |
株式会社村田製作所 |
化合物半導体基板及び電力増幅モジュール
|
|
US10381310B2
(en)
*
|
2017-03-13 |
2019-08-13 |
Intel Corporation |
Embedded multi-die interconnect bridge
|
|
GB2574160B
(en)
*
|
2017-03-13 |
2022-04-27 |
Mitsubishi Electric Corp |
Microwave device and antenna
|
|
US11024608B2
(en)
|
2017-03-28 |
2021-06-01 |
X Display Company Technology Limited |
Structures and methods for electrical connection of micro-devices and substrates
|
|
US10319648B2
(en)
|
2017-04-17 |
2019-06-11 |
Transphorm Inc. |
Conditions for burn-in of high power semiconductors
|
|
US10424684B2
(en)
*
|
2017-06-13 |
2019-09-24 |
Asahi Kasei Kabushiki Kaisha |
MSM ultraviolet ray receiving element, MSM ultraviolet ray receiving device
|
|
US10943946B2
(en)
|
2017-07-21 |
2021-03-09 |
X Display Company Technology Limited |
iLED displays with substrate holes
|
|
US10658264B2
(en)
*
|
2017-09-01 |
2020-05-19 |
Analog Devices, Inc. |
Diamond-based heat spreading substrates for integrated circuit dies
|
|
DE102018121208B4
(de)
*
|
2017-09-01 |
2021-04-29 |
Analog Devices, Inc. |
Diamantbasierte Wärmeverteilungssubstrate für Dies integrierter Schaltkreise
|
|
US10651107B2
(en)
|
2017-09-26 |
2020-05-12 |
Electronics And Telecommunications Research Institute |
Semiconductor device and method for fabricating the same
|
|
KR102356999B1
(ko)
*
|
2017-09-26 |
2022-02-04 |
한국전자통신연구원 |
반도체 장치 및 이의 제조 방법
|
|
US10297585B1
(en)
|
2017-12-21 |
2019-05-21 |
X-Celeprint Limited |
Multi-resolution compound micro-devices
|
|
DE102018200020B4
(de)
*
|
2018-01-02 |
2022-01-20 |
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. |
Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement
|
|
US11189605B2
(en)
|
2018-02-28 |
2021-11-30 |
X Display Company Technology Limited |
Displays with transparent bezels
|
|
US10690920B2
(en)
|
2018-02-28 |
2020-06-23 |
X Display Company Technology Limited |
Displays with transparent bezels
|
|
US12283555B2
(en)
|
2018-03-23 |
2025-04-22 |
Analog Devices International Unlimited Company |
Semiconductor packages
|
|
US10910355B2
(en)
|
2018-04-30 |
2021-02-02 |
X Display Company Technology Limited |
Bezel-free displays
|
|
CN108682663B
(zh)
*
|
2018-05-22 |
2021-01-12 |
中国科学院微电子研究所 |
石墨烯实现GaN基HEMT高效散热的倒装结构及方法
|
|
EP3588525B1
(en)
|
2018-06-28 |
2022-02-16 |
Black & Decker Inc. |
Electronic switch module with oppositely-arranged power switches and discrete heat sinks
|
|
US12236825B2
(en)
|
2018-08-13 |
2025-02-25 |
X Display Company Technology Limited |
Redundant pixel layouts
|
|
CN109534278B
(zh)
*
|
2018-11-01 |
2020-12-15 |
中国科学院半导体研究所 |
声学滤波器与hemt异构集成的结构及其制备方法
|
|
US10748793B1
(en)
|
2019-02-13 |
2020-08-18 |
X Display Company Technology Limited |
Printing component arrays with different orientations
|
|
JP7544734B2
(ja)
|
2019-03-21 |
2024-09-03 |
トランスフォーム テクノロジー，インコーポレーテッド |
Ｉｉｉ族窒化物デバイスのための集積設計
|
|
US10923585B2
(en)
*
|
2019-06-13 |
2021-02-16 |
Cree, Inc. |
High electron mobility transistors having improved contact spacing and/or improved contact vias
|
|
US10971612B2
(en)
|
2019-06-13 |
2021-04-06 |
Cree, Inc. |
High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability
|
|
US11101417B2
(en)
|
2019-08-06 |
2021-08-24 |
X Display Company Technology Limited |
Structures and methods for electrically connecting printed components
|
|
US11152325B2
(en)
|
2019-08-22 |
2021-10-19 |
Cree, Inc. |
Contact and die attach metallization for silicon carbide based devices and related methods of sputtering eutectic alloys
|
|
WO2021044691A1
(ja)
*
|
2019-09-06 |
2021-03-11 |
株式会社村田製作所 |
高周波モジュール及び通信装置
|
|
US11127652B2
(en)
*
|
2019-10-23 |
2021-09-21 |
Raytheon Company |
Semiconductor structures having reduced thermally induced bow
|
|
US10886328B1
(en)
|
2019-12-02 |
2021-01-05 |
International Business Machines Corporation |
Monolithically integrated GaN light-emitting diode with silicon transistor for displays
|
|
US11062936B1
(en)
|
2019-12-19 |
2021-07-13 |
X Display Company Technology Limited |
Transfer stamps with multiple separate pedestals
|
|
KR102304613B1
(ko)
*
|
2019-12-26 |
2021-09-24 |
알에프에이치아이씨 주식회사 |
GaN 기반 반도체 패키지 및 이를 제조하는 방법
|
|
JP7467954B2
(ja)
*
|
2020-02-04 |
2024-04-16 |
富士通株式会社 |
半導体装置及びその製造方法
|
|
GB2593864B
(en)
*
|
2020-02-28 |
2023-01-04 |
X Fab France Sas |
Improved transfer printing for RF applications
|
|
JP7685129B2
(ja)
*
|
2020-04-03 |
2025-05-29 |
マコム テクノロジー ソリューションズ ホールディングス， インコーポレイテッド |
ソース、ゲート及び／又はドレイン導電性ビアを有するｉｉｉ族窒化物ベースの高周波トランジスタ増幅器
|
|
US11670605B2
(en)
|
2020-04-03 |
2023-06-06 |
Wolfspeed, Inc. |
RF amplifier devices including interconnect structures and methods of manufacturing
|
|
US12166003B2
(en)
*
|
2020-04-03 |
2024-12-10 |
Macom Technology Solutions Holdings, Inc. |
RF amplifier devices including top side contacts and methods of manufacturing
|
|
US11837457B2
(en)
|
2020-09-11 |
2023-12-05 |
Wolfspeed, Inc. |
Packaging for RF transistor amplifiers
|
|
US11356070B2
(en)
|
2020-06-01 |
2022-06-07 |
Wolfspeed, Inc. |
RF amplifiers having shielded transmission line structures
|
|
US11769768B2
(en)
|
2020-06-01 |
2023-09-26 |
Wolfspeed, Inc. |
Methods for pillar connection on frontside and passive device integration on backside of die
|
|
US11830842B2
(en)
|
2020-10-22 |
2023-11-28 |
NXP USA., Inc. |
Hybrid device assemblies and method of fabrication
|
|
CN113544844A
(zh)
|
2020-12-28 |
2021-10-22 |
英诺赛科(苏州)科技有限公司 |
半导体封装及其制造方法
|
|
CN115248364A
(zh)
|
2021-04-26 |
2022-10-28 |
财团法人工业技术研究院 |
高频元件测试装置及其测试方法
|
|
CN113658849B
(zh)
*
|
2021-07-06 |
2025-02-21 |
华为技术有限公司 |
复合衬底及其制备方法、半导体器件、电子设备
|
|
CN114334918A
(zh)
*
|
2021-12-28 |
2022-04-12 |
厦门市三安集成电路有限公司 |
混合单片微波集成电路及其制作方法
|
|
US12424594B2
(en)
*
|
2022-03-31 |
2025-09-23 |
Raytheon Company |
Integrated diamond substrate for thermal management
|
|
JP2023162831A
(ja)
*
|
2022-04-27 |
2023-11-09 |
株式会社ナノマテリアル研究所 |
パワーデバイス
|
|
DE112022006617B4
(de)
*
|
2022-05-12 |
2025-12-04 |
Wavepia Co., Ltd. |
Halbleitervorrichtung
|
|
CN115863425A
(zh)
*
|
2023-02-03 |
2023-03-28 |
江苏能华微电子科技发展有限公司 |
一种蓝宝石衬底的GaN HEMT器件及共源共栅结构
|